阅读说明：本技术 一种二维材料半导体薄膜的大规模制备及图案化方法及二维材料半导体薄膜 (Large-scale preparation and patterning method of two-dimensional material semiconductor film and two-dimensional material semiconductor film ) 是由 朱剑 高香香 尹君 卞刚 于 2020-06-12 设计创作，主要内容包括：本发明属二维半导体薄膜制备技术领域,具体涉及一种二维材料半导体薄膜的大规模制备及图案化方法,包括如下步骤：基板预处理；在预处理后的基板上用负胶光刻目标图案；在带有光刻胶图案的基板上用溶液自组装技术制备二维半导体薄膜：基板首先浸泡在聚二烯丙基二甲基氯化铵水溶液,然后浸泡在MoS<Sub>2</Sub>水溶液中,这个过程可多次重复；将基板上得到的薄膜在丙酮中浸泡去除光刻胶,最终得到目标MoS<Sub>2</Sub>图案。本发明的有益效果在于制备方法简单,可以在任何基板上操作；薄膜厚度可控,而且可以实现图案化；反应条件温和,在高性能二维半导体薄膜电子器件领域具有广阔的应用空间。(The invention belongs to the technical field of two-dimensional semiconductor film preparation, and particularly relates to a large-scale preparation and patterning method of a two-dimensional material semiconductor film, which comprises the following steps: pre-treating a substrate; photoetching a target pattern on the pretreated substrate by using a negative photoresist; preparing a two-dimensional semiconductor film on a substrate with a photoresist pattern by using a solution self-assembly technology: the substrate is firstly soaked in polydiallyldimethylammonium chloride aqueous solution and then soaked in MoS 2 In aqueous solution, this process can be repeated many times; soaking the film obtained on the substrate in acetone to remove the photoresist, and finally obtaining the target MoS 2 And (4) patterning. The invention has the beneficial effects of preparationThe method is simple and can be operated on any substrate; the film thickness is controllable, and patterning can be realized; the reaction condition is mild, and the method has wide application space in the field of high-performance two-dimensional semiconductor thin film electronic devices.)

1. A large-scale preparation and patterning method of a two-dimensional material semiconductor film is characterized by comprising the following steps:

step 1, pretreatment of a substrate: cleaning a substrate with an organic solvent, and then treating the substrate with oxygen plasma;

Step 2, photoetching a target pattern on the pretreated substrate by using a negative photoresist: removing the photoresist at the unexposed position of the ultraviolet light to expose the substrate, and remaining the photoresist at the exposed position of the ultraviolet light on the surface of the substrate;

step 3, preparing a two-dimensional semiconductor film on the substrate with the photoresist pattern by a solution self-assembly method: the substrate is firstly soaked in polydiallyldimethylammonium chloride (PDDA) aqueous solution and then soaked in MoS₂In an aqueous solution;

step 4, soaking the film obtained on the substrate in the step 3 in acetone to remove the photoresist, and finally obtaining the target MoS₂And (4) patterning.

2. The method for large-scale preparation and patterning of a two-dimensional material semiconductor thin film according to claim 1, wherein the step 3 is repeated in a PDDA solution and MoS₂Soaking in solution to obtain (MoS)₂/PDDA)_nThin film, n represents the number of times step 3 was repeated.

3. The method for large-scale preparation and patterning of a two-dimensional material semiconductor thin film according to claim 1, wherein the substrate is a rigid structure or a flexible structure.

4. The method for large-scale preparation and patterning of a two-dimensional material semiconductor thin film according to claim 3, wherein when the substrate is a rigid structure, SiO is used ₂Any one or more of Si and glass sheets; when the substrate is of a flexible structure, polyethylene terephthalate (PET) and polyimide are adoptedAny one or more of imines (PI).

5. The method for large-scale preparation and patterning of a two-dimensional material semiconductor thin film according to claim 1, wherein the organic solvent in step 1 is one or more of acetone and isopropanol.

6. The method for large-scale preparation and patterning of the two-dimensional material semiconductor thin film is characterized in that the mass fraction of the PDDA aqueous solution in the step 3 is 0.1%; step 3 of MoS₂After the aqueous solution was diluted 800 times, the absorbance of the ultraviolet characteristic absorption peak at 450nm was 0.8.

7. A two-dimensional material semiconductor thin film, characterized by using the mass production and patterning method of the two-dimensional material semiconductor thin film according to any one of claims 1 to 6.

Technical Field

The invention belongs to the technical field of two-dimensional semiconductor film preparation, and particularly relates to a large-scale preparation and patterning method of a two-dimensional material semiconductor film.

Background

The development of modern silicon-based semiconductors has driven rapid development in the fields of microelectronics and optoelectronics. Semiconductor electronic devices are moving towards smaller, denser, faster, more powerful information processing and storage and larger, lighter, less expensive, more flexible information displays.

Among many semiconductor materials, two-dimensional semiconductor thin films are more attractive in the field of thin film electronics due to their excellent charge transport and mechanical properties. However, large area fabrication of uniform two-dimensional semiconductor thin films has been a challenge, severely limiting their applications.

Disclosure of Invention

The invention aims to provide a method for preparing and patterning a two-dimensional material semiconductor film, which can prepare the two-dimensional material semiconductor film on a large scale under a mild condition and pattern the two-dimensional material semiconductor film.

The invention discloses a large-scale preparation and patterning method of a two-dimensional material semiconductor film, which comprises the following steps:

step 1, pretreatment of a substrate: the substrate is first cleaned with an organic solvent and then treated with oxygen plasma.

Step 2, photoetching a target pattern on the pretreated substrate by using a negative photoresist: the photoresist is removed to expose the substrate where the ultraviolet light is not exposed, and the photoresist remains on the surface of the substrate where the ultraviolet light is exposed.

Step 3, self-assembling the two-dimensional semiconductor film on the substrate with the photoresist pattern by using the solution: the substrate was first soaked in a positively charged aqueous solution of PDDA and then in negatively charged MoS₂In an aqueous solution of (a).

Step 4, the (MoS) obtained on the substrate in step 3₂/PDDA)_nSoaking the film in acetone to remove the photoresist and finally obtaining the target MoS₂And (4) patterning.

Further, the step 3 can be repeated in the PDDA solution and MoS₂Soaking in solution to obtain (MoS)₂/PDDA)_nFilm, n represents the number of repetitions of step 3

Further, the substrate is of a rigid structure or a flexible structure.

Preferably, when the substrate is a rigid structure, SiO is adopted₂One or more of Si and glass sheet.

Preferably, when the substrate is a flexible structure, one or more of PET and PI are adopted.

Further, the organic solvent in the step 1 adopts one or more of acetone and isopropanol.

Further, the mass fraction of the PDDA aqueous solution in step 3 is 0.1%.

Further, MoS of step 3₂After the aqueous solution was diluted 800 times, the absorbance of the ultraviolet characteristic absorption peak at 450nm was 0.8.

The invention also discloses a two-dimensional material semiconductor film, which is prepared by adopting the large-scale preparation and patterning method.

The invention also discloses a method for limiting the domain of a two-dimensional semiconductor thin film electronic device, which is realized by combining the solution self-assembly and the photoetching Lift-Off technology, compared with a plasma etching process required by semiconductor patterning in a general two-dimensional material device, the process is simple and economic, and has good effect, and the solution self-assembly can be carried out on the patterned three-dimensional surface.

The invention has the beneficial effects that:

the preparation method of the two-dimensional semiconductor film provided by the invention is simple, can be operated on any substrate, has controllable film thickness, can realize patterning, and has wide application space in the field of high-performance two-dimensional semiconductor film electronic devices.

The invention has the beneficial effects that:

1. the preparation method is simple and can be operated on any substrate.

2. The film thickness is controllable, and patterning can be realized.

3. The reaction condition is mild, and the method has wide application space in the field of high-performance two-dimensional semiconductor thin film electronic devices.

Drawings

FIG. 1 is a schematic diagram of a solution self-assembly process;

FIG. 2 shows MoS₂Electrokinetic potential (ZETA) profile in aqueous solution;

FIG. 3 is a MoS for solution self-assembly₂Ultraviolet-visible absorption spectrum after the solution is diluted by 800 times;

FIG. 4 is assembled on different substrates (MoS)₂/PDDA)₁A film;

FIG. 5 shows different numbers of layers (MoS)₂/PDDA)_nUltraviolet characterization of the film, optical microscopy pictures, Atomic Force Microscopy (AFM) pictures, and a plot of film thickness as a function of the number of self-assembled layers in the solution.

FIG. 6 shows (MoS) at different adsorption times₂/PDDA)₁Optical microscopy pictures and AFM pictures of thin films.

FIG. 7 is a solution self-assembly of different size patterns (MoS)₂/PDDA)₁Film optical microscope pictures;

FIG. 8 is a diagram of different types of patterns self-assembled from solution on a rigid substrate and a flexible substrate;

FIG. 9 shows MoS₂Nanosheet in photoresist and SiO₂A Scanning Electron Microscope (SEM) picture at the/Si three-dimensional interface;

FIG. 10 is self-assembled (MoS) using solution₂/PDDA)₁A transistor device performance map of the thin film;

FIG. 11 shows In₂Se₃Electrokinetic potential (ZETA) profile in aqueous solution;

FIG. 12 shows (In)₂Se₃/PDDA)₁Optical microscopy of thin films;

FIG. 13 shows (In)₂Se₃/PDDA)₁SEM image of the film;

FIG. 14 shows (In)₂Se₃/PDDA)₁AFM images of the films;

FIG. 15 shows (MoS)₂/PEI)₁Transistor device performance map of thin film.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.