阅读说明：本技术 形成芯片封装结构的方法 (Method for forming chip packaging structure ) 是由 陈俊廷 施应庆 卢思维 吴志伟 于 2020-04-10 设计创作，主要内容包括：本公开提供一种形成芯片封装结构的方法,包括将第一芯片结构以及第二芯片结构接合到基板的表面。第一芯片结构与第二芯片结构隔开。第一芯片结构与第二芯片结构之间具有第一间距。此方法包括去除第一芯片结构的第一部分以及第二芯片结构的第二部分以形成沟槽,此沟槽部分地位在第一芯片结构以及第二芯片结构之中,且部分地位在第一间距上方。此方法包括在沟槽中形成抗翘曲条。抗翘曲条在第一芯片结构、第二芯片结构、以及第一间距上方。(The present disclosure provides a method of forming a chip package structure including bonding a first chip structure and a second chip structure to a surface of a substrate. The first chip structure is spaced apart from the second chip structure. The first chip structure and the second chip structure have a first distance therebetween. The method includes removing a first portion of the first chip structure and a second portion of the second chip structure to form a trench, the trench being located partially within the first chip structure and the second chip structure and partially above the first pitch. The method includes forming an anti-buckling strip in the trench. The anti-warping bar is over the first chip structure, the second chip structure, and the first pitch.)

1. A method of forming a chip package structure, comprising:

bonding a first chip structure and a second chip structure to a surface of a substrate, wherein the first chip structure is spaced apart from the second chip structure with a first spacing therebetween;

removing a first portion of the first chip structure and a second portion of the second chip structure to form a trench, the trench being partially located in the first chip structure and the second chip structure and partially located above the first pitch; and

An anti-warping bar is formed in the trench, wherein the anti-warping bar is above the first chip structure, the second chip structure and the first space.

Technical Field

The embodiment of the disclosure relates to a chip packaging structure and a forming method thereof.

Background

Semiconductor devices are used in various electronic applications such as personal computers, cellular phones, digital cameras, and other electronic devices. Semiconductor devices are typically manufactured by sequentially depositing insulating or dielectric layers, conductive layers, and semiconductor layers on a semiconductor substrate, and patterning the various material layers using photolithography and etching processes to form circuit features and elements on the material layers.

Typically, many integrated circuits are fabricated on a semiconductor wafer. The die may be processed and packaged at the wafer level on the wafer level, and various techniques for wafer level packaging have been developed. Since a chip package may require different chips with different functions, it is a challenge to form a reliable chip package with different chips.

Disclosure of Invention

According to some embodiments, the present disclosure provides a method of forming a chip package structure, comprising bonding a first chip structure and a second chip structure to a surface of a substrate. The first chip structure is spaced apart from the second chip structure. The first chip structure and the second chip structure have a first distance therebetween. The method includes removing a first portion of the first chip structure and a second portion of the second chip structure to form a trench, the trench being located partially within the first chip structure and the second chip structure and partially above the first pitch. The method includes forming an anti-buckling strip in the trench. The anti-warping bar is over the first chip structure, the second chip structure, and the first pitch.

According to some embodiments, the present disclosure provides a method of forming a chip package structure. The method includes bonding a first chip structure and a second chip structure to a surface of a substrate. The first chip structure is separated from the second chip structure by a first pitch. The method includes removing a first portion of a first chip structure and a second portion of a second chip structure to form a trench, the trench residing partially in the first chip structure, partially in or over the second chip structure, and partially over the first pitch. The method includes forming an anti-buckling strip in the trench. The warp-resistant strip extends across the first pitch.

According to some embodiments, the present disclosure provides a chip packaging structure. The chip packaging structure comprises a substrate. The chip packaging structure comprises a first chip structure and a second chip structure, and is positioned above the substrate. The first chip structure is spaced apart from the second chip structure. The chip packaging structure comprises an anti-warping strip, and is positioned in the first chip structure and positioned in or above the second chip structure. The anti-warp strip extends continuously from the second chip structure into the first chip structure.

Drawings

Embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, various features are not shown to scale and are merely illustrative. In fact, the dimensions of the elements may be arbitrarily expanded or reduced to clearly illustrate the features of the present disclosure.

Fig. 1A to 1I are cross-sectional views of various stages of a process of forming a chip package structure.

Fig. 1A-1 is a top view of the chip package structure of fig. 1A, according to some embodiments.

FIG. 1B-1 is a top view of the chip package structure of FIG. 1B, according to some embodiments.

Fig. 1C-1 is a top view of the chip package structure of fig. 1C, according to some embodiments.

FIG. 1I-1 is a top view of the chip package structure of FIG. 1I, according to some embodiments.

Fig. 2A is a cross-sectional view of a chip package structure according to some embodiments.

Fig. 2B is a top view of the chip package structure of fig. 2A, according to some embodiments.

Fig. 3 is a top view of a chip package structure according to some embodiments.

Fig. 4A is a top view of a chip package structure according to some embodiments.

Fig. 4B is a cross-sectional view of the chip package structure shown along section line I-I' in fig. 4A, according to some embodiments.

Fig. 5 is a top view of a chip package structure according to some embodiments.

Fig. 6 is a cross-sectional view of a chip package structure according to some embodiments.

Fig. 7 is a cross-sectional view of a chip package structure according to some embodiments.

Fig. 8A is a top view of a chip package structure according to some embodiments.

Fig. 8B is a cross-sectional view of the chip package structure shown along section line I-I' in fig. 8A, according to some embodiments.

Wherein the reference numerals are as follows:

10: seed layer

100, 200, 300, 400, 500, 600, 700, 800: chip package structure 110: substrate

111: semiconductor structure

111a, 111 b: surface of

112: guide hole

113: insulating layer

114, 117: redistribution structure

114a, 117 a: dielectric layer

114b, 117 b: line layer

114c, 117 c: guide hole

115: conducting pad

116: insulating layer

118: conducting pad

119: buffer ring

120, 130: wafer structure

124, 139, 162, 172: top surface

131, 132, 133, 134: semiconductor die

132a, 133a, 134a, 158a, 158 b: side wall

135, 170: molding layer

135a, 156: lower surface

136: conductive bonding structure

137, 150: underfill layer

138: guide hole

140, 192: conductive bump

152, 154, 174, 176: in part

160: anti-warping strip

164a, 164 b: end part

180: mask layer

182: opening of the container

212: solder layer

212 a: solder ball

610: substrate

A: adhesive layer

B: bottom surface

C: inner wall

G1, G2, G3, G4: distance between each other

I-I': section line

L1, L2, L3: length of

R: groove

SC: cutting path

T1, T2, T3, T4, T5: thickness of

W1, W2, W3, W4, W5, W6: width of

Detailed Description

Various embodiments or examples are disclosed below to practice various features of the provided subject matter, and embodiments of specific elements and arrangements thereof are described below to illustrate the present disclosure. These examples are, of course, intended to be illustrative only and should not be construed as limiting the scope of the disclosure. For example, references in the specification to a first feature being formed over a second feature include embodiments in which the first feature is in direct contact with the second feature, as well as embodiments in which additional features are provided between the first feature and the second feature, i.e., the first feature and the second feature are not in direct contact. Moreover, where specific reference numerals or designations are used in the various embodiments, these are merely used to clearly describe the disclosure and are not intended to necessarily indicate a particular relationship between the various embodiments and/or structures discussed.

Furthermore, spatially relative terms, such as "between …", "below", "lower", "above", "upper" and the like, may be used herein to facilitate describing the relationship of element(s) or feature(s) to one another in the drawings and are intended to encompass different orientations of the device in which the features are included. When the device is turned to a different orientation (rotated 90 degrees or otherwise), then the spatially relative adjectives used herein will also be interpreted in terms of the turned orientation. It will be understood that additional operations may be provided before, during or after the methods described above, and that some of the operations described may be substituted or eliminated with respect to other embodiments of the methods described above.

Some embodiments of the disclosure are described below. Additional operations may be provided before, during and/or after the stages described in the embodiments. Certain stages described may be replaced or eliminated with respect to different embodiments. Additional features may be added to the semiconductor device structure. Certain functions described below may be replaced or removed for different embodiments. Although some embodiments are discussed using operations that are performed in a particular order, the operations may be performed in other logical orders.

Other features and processes may also be included in the present disclosure. For example, test structures may be included to facilitate verification testing of 3D packages or 3DIC devices. The test structures may include, for example, test pads formed in the redistribution layer or on the substrate to allow testing of 3D packages or 3 DICs, use of probes and/or probe cards, and the like. Verification tests may be performed on the intermediate structure as well as the final structure. In addition, the structures and methods disclosed in the present disclosure may be used with intermediate verification test methods of known good dies to increase yield and reduce cost.

Fig. 1A to 1I are cross-sectional views of various stages of a process of forming a chip package structure. Fig. 1A-1 is a top view of the chip package structure of fig. 1A, according to some embodiments. Fig. 1A is a cross-sectional view of a chip package structure shown along section line I-I' in fig. 1A-1, according to some embodiments.

According to some embodiments, as shown in FIG. 1A and FIG. 1A-1, a substrate 110 is provided. In some embodiments, the substrate 110 is a wafer. According to some embodiments, the substrate 110 includes a semiconductor structure 111, a via 112, an insulating layer 113, a redistribution structure 114, and a conductive pad 115.

According to some embodiments, the semiconductor structure 111 has surfaces 111a and 111 b. In some embodiments, semiconductor structure 111 is formed from elemental semiconductor material including silicon or germanium in a single crystal (single crystal), polycrystalline (polycrystalline), or amorphous (amorphous) structure.

In some other embodiments, the semiconductor structure 111 is formed of a compound semiconductor (e.g., silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, or indium arsenide), an alloy semiconductor (e.g., SiGe or GaAsP), or a combination thereof. The semiconductor structure 111 may also include multiple-layer semiconductors (multi-layer semiconductors), semiconductor-on-insulator (SOI) (e.g., silicon-on-insulator or germanium-on-insulator), or combinations thereof.

In some embodiments, the substrate 110 is an interleaf wafer (interleaf wafer). According to some embodiments, vias 112 are formed in semiconductor structure 111. The via 112 may extend from the surface 111a into the semiconductor structure 111. According to some embodiments, an insulating layer 113 is formed over the semiconductor structure 111. According to some embodiments, an insulating layer 113 is located between the via 112 and the semiconductor structure 111.

According to some embodiments, the insulating layer 113 is configured to electrically insulate the via 112 from the semiconductor structure 111. According to some embodiments, the insulating layer 113 is formed of an oxide-containing material, such as silicon oxide. The insulating layer 113 is formed using an oxidation process, a deposition process, or other suitable processes.

In other embodiments, the substrate 110 is a device wafer including various device components. In some embodiments, various device elements are formed in and/or over the substrate 110. For simplicity and clarity, apparatus elements have not been depicted in the drawings. Examples of various device elements include active devices, passive devices, other suitable elements, or combinations thereof. The active devices may include transistors or diodes (not shown) formed on the surface 111 a. Passive devices include resistors, capacitors, or other suitable passive devices.

For example, the transistors may be Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), Complementary Metal Oxide Semiconductor (CMOS) transistors, Bipolar Junction Transistors (BJTs), high-voltage transistors (high-voltage transistors), high-frequency transistors (high-frequency transistors), p-channel and/or n-channel field effect transistors (PFETs/NFETs), and the like. Various processes are performed to form various device elements, such as front-end-of-line (FEOL) semiconductor processes. The front end of line semiconductor manufacturing process may include deposition, etching, implantation, lithography, annealing, planarization, one or more other suitable processes, or a combination thereof.

In some embodiments, isolation features (not shown) are formed in the substrate 110. The isolation features serve to define an active region and electrically isolate various device elements formed in and/or over the substrate 110 in the active region. In some embodiments, the isolation features include Shallow Trench Isolation (STI) features, local oxidation of silicon (LOCOS) features, other suitable isolation features, or a combination thereof.

According to some embodiments, redistribution structure 114 is formed over semiconductor structure 111. According to some embodiments, conductive pad 115 is formed over redistribution structure 114. The redistribution structure 114 includes a dielectric layer 114a, a line layer 114b, and a via 114c, according to some embodiments. According to some embodiments, a dielectric layer 114a is formed on surface 111 a. According to some embodiments, the line layer 114b is formed in the dielectric layer 114 a.

As shown in fig. 1A, according to some embodiments, vias 114c make electrical connections between different line layers 114b, and between line layer 114b and conductive pads 115. According to some embodiments, fig. 1A shows only one wiring layer 114b for simplicity. According to some embodiments, the via 112 is electrically connected to the conductive pad 115 through the line layer 114b and the via 114 c.

According to some embodiments, as shown in fig. 1A, chip structures 120 and 130 are bonded to substrate 110 through conductive bumps 140 between chip structure 120 and substrate 110 and between chip structure 130 and substrate 110. According to some embodiments, the chip structures 120 and 130 and the substrate 110 are spaced apart from each other. According to some embodiments, there is a spacing G1 between the wafer structure 120 and the substrate 110, and between the wafer structure 130 and the substrate 110. According to some embodiments, conductive bumps 140 are located in a spacing G1.

According to some embodiments, the wafer structures 120 and 130 are spaced apart from each other by a gap G2. According to some embodiments, chip architecture 120 includes a chip, such as a system on chip (SoC). In some other embodiments, chip structure 120 comprises a chip package structure.

In some embodiments, chip structure 130 includes a plurality of semiconductor dies. According to some embodiments, as shown in fig. 1A, chip structure 130 includes semiconductor dies 131, 132, 133, and 134. In some embodiments, chip structure 130 includes a molding layer 135 to encapsulate and protect semiconductor dies 132, 133, and 134. The molding layer 135 may include epoxy-based resin (epoxy-based resin) in which a filler is dispersed. The filler may include insulating fibers, insulating particles, other suitable elements, or combinations thereof.

In some embodiments, semiconductor dies 132, 133, and 134 are memory dies. The memory die may include memory devices, such as Static Random Access Memory (SRAM) devices, Dynamic Random Access Memory (DRAM) devices, other suitable devices, combinations thereof, or the like. In some embodiments, semiconductor die 131 is a control die electrically connected to memory dies (e.g., semiconductor dies 132, 133, and 134) stacked on semiconductor die 131. The chip architecture 130 may act as a High Bandwidth Memory (HBM).

Various changes and/or modifications may be made to the embodiments of the present disclosure. In some embodiments, chip structure 130 includes a single semiconductor chip. The semiconductor chip may be a system on a chip. As shown in fig. 1A, in some embodiments, conductive bonding structures 136 are formed between semiconductor dies 131, 132, 133, and 134 to bond semiconductor dies 131, 132, 133, and 134 together. In some embodiments, each conductive bonding structure 136 includes a metal pillar and/or a solder bump (solderballs).

In some embodiments, an underfill layer 137 is formed between the semiconductor crystals 131, 132, 133, and 134 to surround and protect the conductive bonding structure 136. In some embodiments, the underfill layer 137 includes an epoxy-based resin having a filler dispersed therein. The filler may include insulating fibers, insulating particles, other suitable elements, or combinations thereof.

In some embodiments, as shown in fig. 1A, a plurality of vias 138 are formed in semiconductor dies 131, 132, and 133. Each via 138 passes through one of semiconductor dies 131, 132, and 133 and is electrically connected to conductive bonding structure 136 below and/or above via 138. Electrical signals may be transmitted between the vertically stacked semiconductor dies 131, 132, 133, and 134 through the vias 138.

According to some embodiments, as shown in fig. 1A and 1A-1, underfill layer 150 is formed in a gap G1 between substrate 110 and each chip structure 120 and 130. According to some embodiments, as shown in fig. 1A and 1A-1, the gap G2 between chip structures 120 and 130 is filled with a portion 152 of underfill layer 150. According to some embodiments, as shown in fig. 1A-1, the spaces G3 between the chip structures 130 are filled with a portion 154 of the underfill layer 150.

According to some embodiments, underfill layer 150 surrounds chip structures 120 and 130. According to some embodiments, the underfill layer 150 is referred to as a protective layer. According to some embodiments, the underfill layer 150 comprises a polymeric material.

FIG. 1B-1 is a top view of the chip package structure of FIG. 1B, according to some embodiments. Fig. 1B is a cross-sectional view of a chip package structure shown along section line I-I' in fig. 1B-1, according to some embodiments. According to some embodiments, as shown in fig. 1B and 1B-1, portions of the wafer structures 120 and 130 and the underfill layer 150 are removed. The removal process partially removes mold layer 135 of chip structure 130 and portions 152 and 154 of underfill layer 150.

According to some embodiments, after the removal process, the molding layer 135 remaining in each chip structure 130 covers the entire sidewalls 132a, 133a, and 134a of the semiconductor dies 132, 133, and 134. According to some embodiments, after the removal process, the molding layer 135 and the semiconductor dies 132 remaining in each chip structure 130 cover the entire top surface 131a of the semiconductor crystal 131.

According to some embodiments, the removal process forms trenches R in part in wafer structures 120 and 130 and underfill layer 150. According to some embodiments, trench R does not pass through chip structures 120 and 130 and underfill layer 150. According to some embodiments, trench R is located partially above spacings G2 and G3. That is, according to some embodiments, trench R partially overlaps spaces G2 and G3.

According to some embodiments, as shown in fig. 1B, the lower surface 122 of the chip structure 120, the lower surface 135a of the chip structure 130, and the lower surface 156 of the underfill layer 150 together form the bottom surface B of the trench R. According to some embodiments, lower surfaces 122, 135a, and 156 are substantially coplanar. The term "substantially coplanar" in this disclosure may include small deviations from coplanar geometry. The variations may be due to the manufacturing process.

Fig. 1C-1 is a top view of the chip package structure of fig. 1C, according to some embodiments. Fig. 1C is a cross-sectional view of a chip package structure shown along section line I-I' in fig. 1C-1, according to some embodiments. As shown in fig. 1C and 1C-1, the anti-warp bars 160 are formed in the grooves R, respectively.

According to some embodiments, anti-warp strip 160 is located over chip structures 120 and 130 and portions 152 and 154 of underfill layer 150. According to some embodiments, the anti-warping bar 160 is located above the bottom surface B. According to some embodiments, the anti-warp bars 160 extend across the gaps G2 and G3. According to some embodiments, the anti-warpage strip 160 extends continuously from the chip structure 120 into the chip structure 130.

According to some embodiments, the anti-warp bars 160 are spaced apart from the wafer structures 120 and 130 and the underfill layer 150. In some embodiments, the width W1 of the anti-warp bar 160 is less than the width W2 of the trench R. According to some embodiments, the width W2 is about 1 μm to about 10 mm.

According to some embodiments, the anti-buckling bars 160 are spaced apart from the inner wall C of the groove R by a spacing G4. According to some embodiments, the width W1 of the anti-warp strip 160 is less than the length L1 of the anti-warp strip 160. According to some embodiments, length L1 is less than or equal to length L2 of trench R. According to some embodiments, length L2 is less than or equal to length L3 of chip structure 120.

According to some embodiments, the gap G2 has a width W3. According to some embodiments, the width W2 of the trench R is greater than the width W3. According to some embodiments, the anti-warpage strip 160 above the chip structure 120 has a width W4.

According to some embodiments, the anti-warp bars 160 above the wafer structure 130 have a width W5. According to some embodiments, width W4 is greater than width W3. In some embodiments, the ratio of width W4 to width W3 is in the range of about 2 to about 50. According to some embodiments, the width W3 is in a range from about 0.5 μm to about 200 μm.

According to some embodiments, the width W4 is in a range from about 100 μm to about 2000 μm. According to some embodiments, width W5 is greater than width W3. According to some embodiments, the width W5 is in a range from about 100 μm to about 2000 μm. In some embodiments, width W4 is greater than width W5.

According to some embodiments, the anti-warp bars 160 are harder than the underfill layer 150. That is, according to some embodiments, the anti-warp bars 160 are made of a material that is harder than the material of the underfill layer 150. The anti-warp strip 160 is made of, for example, a metal material or a semiconductor material.

According to some embodiments, the metallic material comprises copper, gold, silver, aluminum, alloys thereof, combinations thereof, or other suitable materials. According to some embodiments, if the anti-warpage strip 160 is made of a metal material, the anti-warpage strip 160 improves the heat dissipation efficiency of the chip structures 120 and 130.

The semiconductor material comprises an elemental semiconductor material comprising silicon or germanium in a single crystal, polycrystalline, or amorphous structure. In other embodiments, the warp resistant strip 160 is made of a compound semiconductor (e.g., silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, or indium arsenide), an alloy semiconductor (e.g., SiGe or GaAsP), or a combination thereof. The anti-warp strip 160 may also include multiple layers of semiconductors, semiconductor-on-insulator (SOI) (e.g., silicon-on-insulator or germanium-on-insulator), or combinations thereof.

According to some embodiments, as shown in fig. 1C, each anti-warp strip 160 is bonded to the wafer structures 120 and 130 and the underfill layer 150 by an underlying adhesive layer a. According to some embodiments, adhesion layer a is located between anti-warpage strip 160 and chip structure 120, between anti-warpage strip 160 and chip structure 130, and between anti-warpage strip 160 and underfill layer 150. In some embodiments, the thickness T1 of the anti-warp strip 160 is greater than the thickness T2 of adhesive layer a. In some embodiments, the thickness T3 of the wafer structure 120 is greater than the thicknesses T1 and T2.

According to some embodiments, the adhesion layer a directly contacts the upper anti-warp strip 160, the lower wafer structures 120 and 130, and the lower underfill layer 150. According to some embodiments, the adhesive layer a is made of an insulating material, a polymer material, or a metal.

According to some embodiments, as shown in fig. 1D, a molding layer 170 is formed over the substrate 110, the chip structures 120 and 130, the conductive bump 140, the underfill layer 150, the anti-warpage strip 160, and the adhesive layer a. According to some embodiments, the mold layer 170 fills in the gap G4. According to some embodiments, the anti-buckling strips 160 are harder than the shaping layer 170. According to some embodiments, the shaping layer 170 comprises a polymeric material.

According to some embodiments, as shown in fig. 1E, molding layer 170 is thinned until top surfaces 124 and 139 of chip structures 120 and 130 are exposed. According to some embodiments, the thinning process includes a Chemical Mechanical Polishing (CMP) process. According to some embodiments, after the thinning process, the top surfaces 124, 139, and 172 of the chip structures 120 and 130 are substantially coplanar with the molding layer 170.

According to some embodiments, a portion 174 of the molding layer 170 remains in the trench R after the thinning process. According to some embodiments, in the groove R, the portion 174 surrounds (or encircles) the anti-warping strip 160 and the adhesive layer a. According to some embodiments, in the groove R, the portion 174 covers the entire warp-resistant strip 160 and the entire adhesive layer a. According to some embodiments, a portion 176 of the molding layer 170 remains over the substrate 110 and outside the trench R after the thinning process.

According to some embodiments, portion 176 surrounds chip structures 120 and 130, conductive bump 140, underfill layer 150, anti-warp strip 160, and adhesive layer a. According to some embodiments, portions 174 and 176 are spaced apart from each other.

According to some embodiments, as shown in fig. 1F, a lower portion of semiconductor structure 111 is removed. According to some embodiments, the removal process comprises a Chemical Mechanical Polishing (CMP) process. According to some embodiments, the via 112 and the insulating layer 113 are exposed after the removal process.

According to some embodiments, the via 112 and the insulating layer 113 pass through the semiconductor structure 111. According to some embodiments, when the semiconductor structure 111 is a silicon substrate, the via 112 is also referred to as a through-substrate via or a through-silicon via.

According to some embodiments, semiconductor structure 111 is flipped upside down as shown in fig. 1G. According to some embodiments, an insulating layer 116 is formed over surface 111b, as shown in fig. 1G. According to some embodiments, the insulating layer 116 is configured to electrically insulate a line layer subsequently formed over the insulating layer 116 from the semiconductor structure 111. According to some embodiments, the insulating layer 116 is made of an oxide-containing material, such as silicon oxide. The insulating layer 116 is formed by an oxidation process, a deposition process, or other suitable processes.

In some embodiments, redistribution structure 117 is formed on surface 111b of semiconductor structure 111. In some embodiments, redistribution structure 117 includes dielectric layer 117a, line layer 117b, and via 117 c. In some embodiments, line layer 117b is formed in dielectric layer 117 a.

According to some embodiments, as shown in fig. 1G, a conductive pad 118 is formed on the redistribution structure 117. According to some embodiments, the vias 117c electrically connect between different line layers 117b and between the line layer 117b and the conductive pads 118. According to some embodiments, fig. 1G shows only one of the line layers 117b for the sake of brevity. According to some embodiments, the via 112 is electrically connected to the conductive pad 118 through the line layer 117b and the via 117 c.

According to some embodiments, a buffer ring 119 is formed over the conductive pad 118, as shown in FIG. 1G. According to some embodiments, the buffer ring 119 has an opening 119a to expose the underlying conductive pad 118. According to some embodiments, the buffer ring 119 is configured to buffer stress between bumps subsequently formed over the buffer ring 119 and the substrate 110.

According to some embodiments, the cushion ring 119 is made of an elastomeric material, such as a polymeric material (e.g., polyimide). In some other embodiments (not shown), the buffer ring 119 is replaced with a buffer layer having an opening to expose the conductive pad 118.

According to some embodiments, as shown in fig. 1G, a seed layer 10 is formed on the redistribution structure 117, the buffer ring 119, and the conductive pad 118. The material of seed layer 10 may comprise copper or a copper alloy. The material of seed layer 10 may include other metals such as silver, gold, aluminum, and combinations thereof.

According to some embodiments, a masking layer 180 is formed over seed layer 10, as shown in fig. 1G. According to some embodiments, the masking layer 180 has an opening 182, where the opening 182 exposes the seed layer 10 over the conductive pad 118 and the buffer ring 119 and adjacent to the conductive pad 118. According to some embodiments, the mask layer 180 is made of a polymer material, such as a photoresist material.

According to some embodiments, as shown in fig. 1H, a conductive bump 192 is formed in the opening 182 and over the conductive pad 118. In some embodiments, the conductive bumps 192 are electrically connected to the wafer structures 120 and/or 130 through the substrate 110. According to some embodiments, the conductive bump 192 is made of a conductive material such as copper (Cu), aluminum (Al), tungsten (W), cobalt (Co), or nickel (Ni). According to some embodiments, the conductive bump 192 is formed using a plating process such as an electroplating process.

According to some embodiments, as shown in fig. 1H, a solder layer 212 is formed over the conductive bump 192. According to some embodiments, the solder layer 212 is made of tin (Sn) or other suitable conductive material having a melting point lower than the melting point of the conductive bump 192. According to some embodiments, the solder layer 212 is formed using a plating process, such as an electroplating process.

As shown in FIG. 1I, according to some embodiments, the masking layer 180 is removed. According to some embodiments, as shown in fig. 1I, the seed layer 10, which was originally covered by the masking layer 180, is removed. According to some embodiments, the seed layer 10 is removed using an etching process. According to some embodiments, as shown in fig. 1I, a reflow process is performed on the solder layer 212 to convert the solder layer 212 into solder balls 212 a.

FIG. 1I-1 is a top view of the chip package structure of FIG. 1I, according to some embodiments. FIG. 1I is a cross-sectional view of a chip package structure shown along section line I-I' in FIG. 1I-1, according to some embodiments. According to some embodiments, as shown in fig. 1H, 1I and 1I-1, a cutting process is performed to cut the substrate 110 and the molding layer 170 along a predetermined cutting line SC, thereby forming the chip package 100. According to some embodiments, fig. 1I shows only one of the chip packages 100 for the sake of brevity.

According to some embodiments, the chip package 100 is flipped upside down as shown in fig. 1I. According to some embodiments, as shown in fig. 1I-1, portion 174 of molding layer 170 is separated from portion 176 of molding layer 170 by portions 152 and 154 of underfill layer 150 and chip structures 120 and 130.

Since the portion 152 of the underfill layer 150 between the wafer structures 120 and 130 is partially replaced by the anti-warpage bar 160 that is harder than the underfill layer 150, the anti-warpage bar 160 reduces warpage of the chip package 100 due to a thermal expansion (CTE) mismatch between the chip structures 120 and 130.

Fig. 2A is a cross-sectional view of a chip package structure 200, according to some embodiments. Fig. 2B is a top view of the chip package structure 200 of fig. 2A, according to some embodiments. Fig. 2A is a cross-sectional view of a chip package structure 200 along section line I-I' in fig. 2B, according to some embodiments.

According to some embodiments, as shown in fig. 2A and 2B, the structure and formation method of the chip package structure 200 are similar to those of the chip package structure 100 of fig. 1I, but differ in the manner of formation of the molding layer 170 of the chip package structure 200.

The forming manner of the molding layer 170 of the chip package structure 200 includes: a molding layer 170 is formed over the substrate 110, the chip structures 120 and 130, the conductive bumps 140, the underfill layer 150, the anti-warpage strip 160, and the adhesive layer a (as shown in fig. 1D). The molding layer 170 is then thinned until the top surfaces 124, 139, and 162 of the chip structures 120 and 130 and the anti-warpage bar 160 are exposed (as shown in fig. 2A and 2B).

According to some embodiments, the thinning process comprises a Chemical Mechanical Polishing (CMP) process. According to some embodiments, the molding layer 170 remaining in the groove R surrounds (or encircles) the anti-buckling strip 160 and the adhesive layer a after the thinning process. According to some embodiments, top surfaces 124, 139, 162, and 172 of chip structures 120 and 130, anti-warp strip 160, and molding layer 170 are substantially coplanar after the thinning process.

Fig. 3 is a top view of a chip package structure 300, according to some embodiments. According to some embodiments, as shown in fig. 3, the chip package structure 300 is similar to the chip package structure 200 of fig. 2A and 2B, except that the length L2 of the trench R is substantially equal to the length L3 of the wafer structure 120. Thus, according to some embodiments, the portion 174 of the molding layer 170 in the groove R is connected to the portion 176 of the molding layer 170 outside the groove R. According to some embodiments, the anti-warping strip 160 has a strip shape. According to some embodiments, the anti-warping strips 160 have a uniform width.

Fig. 4A is a top view of a chip package structure 400, according to some embodiments. Fig. 4B is a cross-sectional view of the chip package structure 400 shown along section line I-I' in fig. 4A, according to some embodiments.

According to some embodiments, as shown in fig. 4A and 4B, chip package structure 400 is similar to chip package structure 300 of fig. 3 except that length L1 of anti-warpage strip 160 is greater than length L3 of chip structure 120. According to some embodiments, the ends 164a and 164b of the anti-warp bars 160 protrude from the sidewalls 158a and 158b, respectively, of the underfill layer 150.

Fig. 5 is a top view of a chip package structure 500, according to some embodiments. According to some embodiments, as shown in fig. 5, a chip package structure 500 is similar to the chip package structure 300 of fig. 3, except that the anti-warpage strip 160 of the chip package structure 500 has an I-shaped shape different from the structure of the anti-warpage strip 160 of the chip package structure 300. According to some embodiments, the anti-warpage strip 160 of the chip package structure 300 of fig. 3 has a strip shape.

Fig. 6 is a cross-sectional view of a chip package structure 600, according to some embodiments. According to some embodiments, as shown in fig. 6, the wafer package structure 200 of fig. 2A is bonded to a substrate 610. After bonding chip package structure 200 to substrate 610, chip package structure 200 may be slightly bent along a gap G2 between chip structures 120 and 130.

According to some embodiments, the anti-warp strip 160 and the substrate 110 may be slightly curved. According to some embodiments, a thickness T4 of solder balls 212a directly under chip structure 120 is greater than a thickness T5 of solder balls 212a directly under chip structure 130.

The substrate 610 may be a wiring substrate or a built-in substrate. In some other embodiments, the chip package structure 200 is replaced by the chip package structure 100 of fig. 1I, the chip package structure 300 of fig. 3, the chip package structure 400 of fig. 4A, the chip package structure 500 of fig. 5, or the chip package structure 700 of fig. 7.

Fig. 7 is a cross-sectional view of a chip package structure 700 according to some embodiments. According to some embodiments, as shown in fig. 7, chip package structure 700 is similar to chip package structure 200 of fig. 2A, except that chip package structure 700 does not have underfill layer 150. According to some embodiments, the molding layer 170 is in direct contact with the substrate 110, the chip structures 120 and 130, the conductive bumps 140, the anti-warpage strip 160, and the adhesive layer a.

Fig. 8A is a top view of a chip package structure 800, according to some embodiments. Fig. 8B is a cross-sectional view of the chip package structure 800 shown along section line I-I' in fig. 8A, according to some embodiments.

According to some embodiments, as shown in fig. 8A and 8B, chip package structure 800 is similar to chip package structure 400 of fig. 4A except that width W1 of anti-warpage strip 160 is greater than width W6 of chip structure 120. According to some embodiments, the anti-warpage strip 160 extends across the chip structure 120.

The processes and materials used to form the chip package structures 200, 300, 400, 500, 700, and 800 may be similar or identical to the processes and materials used to form the chip package structure 100 described above.

According to some embodiments, the present disclosure provides a chip packaging structure and a method of forming the same. The method (for forming the chip package structure) forms anti-warp bars in the first and second wafer structures that extend across a gap between the first and second wafer structures. The anti-warpage strip reduces warpage of the chip package structure caused by a mismatch in thermal expansion coefficients between the first and second wafer structures.

According to some embodiments, the present disclosure provides a method of forming a chip package structure, comprising bonding a first chip structure and a second chip structure to a surface of a substrate. The first chip structure is spaced apart from the second chip structure. The first chip structure and the second chip structure have a first distance therebetween. The method includes removing a first portion of the first chip structure and a second portion of the second chip structure to form a trench, the trench being located partially within the first chip structure and the second chip structure and partially above the first pitch. The method includes forming an anti-buckling strip in the trench. The anti-warping bar is over the first chip structure, the second chip structure, and the first pitch.

In some embodiments, the method of forming a chip package structure further comprises forming an underfill layer in the first pitch and in a second pitch after bonding the first chip structure and the second chip structure to the surface of the substrate and before removing the first portion of the first chip structure and the second portion of the second chip structure, the second pitch being between the first chip structure and the surface and between the second chip structure and the surface, wherein removing the first portion of the first chip structure and the second portion of the second chip structure further comprises removing a third portion of the underfill layer in the first pitch. In some embodiments, the anti-warp bars are located over the underfill layer in the first pitch. In some embodiments, the anti-warp bars are harder than the underfill layer. In some embodiments, the method of forming the chip package structure further includes forming a molding layer over the surface and in the trench after forming the anti-warpage strip in the trench, wherein the molding layer over the surface surrounds the first chip structure and the second chip structure, and the molding layer in the trench surrounds the anti-warpage strip. In some embodiments, the first width of the anti-warp bars is less than the second width of the trenches. In some embodiments, the anti-buckling bars are spaced apart from the inner walls of the grooves by a second pitch, and the molding layer fills the second pitch. In some embodiments, the warp-resistant strip is harder than the shaping layer. In some embodiments, the anti-warp strip is bonded to the first chip structure and the second chip structure by an adhesive layer between the anti-warp strip and the first chip structure and between the anti-warp strip and the second chip structure. In some embodiments, the width of the anti-buckling strip is less than the length of the anti-buckling strip.

According to some embodiments, the present disclosure provides a method of forming a chip package structure. The method includes bonding a first chip structure and a second chip structure to a surface of a substrate. The first chip structure is separated from the second chip structure by a first pitch. The method includes removing a first portion of a first chip structure and a second portion of a second chip structure to form a trench, the trench residing partially in the first chip structure, partially in or over the second chip structure, and partially over the first pitch. The method includes forming an anti-buckling strip in the trench. The warp-resistant strip extends across the first pitch.

In some embodiments, the method of forming the chip package structure further includes forming an underfill layer in the first pitch and in a second pitch between the first chip structure and the surface and between the second chip structure and the surface after bonding the first chip structure and the second chip structure to the surface of the substrate and before removing the first portion of the first chip structure and the second portion of the second chip structure, wherein removing the first portion of the first chip structure and the second portion of the second chip structure further includes removing a third portion of the underfill layer in the first pitch and the first lower surface of the first chip structure, the second lower surface of the second chip structure, and the third lower surface of the underfill layer together form a bottom surface of the trench, and the anti-warpage bar is located above the bottom surface. In some embodiments, the anti-warpage strip is bonded to the first chip structure, the second chip structure, and the underfill layer by an adhesive layer, and the adhesive layer directly contacts the anti-warpage strip, the first chip structure, the second chip structure, and the underfill layer. In some embodiments, the anti-warp bars are harder than the underfill layer. In some embodiments, the anti-warp strip extends across the second chip structure.

According to some embodiments, the present disclosure provides a chip packaging structure. The chip packaging structure comprises a substrate. The chip packaging structure comprises a first chip structure and a second chip structure, and is positioned above the substrate. The first chip structure is spaced apart from the second chip structure. The chip packaging structure comprises an anti-warping strip, and is positioned in the first chip structure and positioned in or above the second chip structure. The anti-warp strip extends continuously from the second chip structure into the first chip structure.

In some embodiments, the chip package structure further includes an underfill layer positioned between the first chip structure and the second chip structure, between the first chip structure and the substrate, and between the second chip structure and the substrate. In some embodiments, the anti-warpage strip is located over the underfill layer and between the first chip structure and the second chip structure. In some embodiments, the anti-warping strip is spaced apart from the first chip structure and the second chip structure. In some embodiments, the chip package structure further includes an adhesive layer between the anti-warpage strip and the first chip structure, and between the anti-warpage strip and the second chip structure.

The foregoing outlines features of many embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art may readily devise many other varied processes and structures that are consistent with the present disclosure and which will still achieve the same objects and/or advantages as those achieved by the embodiments of the present disclosure. Those skilled in the art should also realize that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure, and that such departures from the present disclosure are intended to be embraced therein.