Preparation method of ternary oxide film with equal stoichiometric ratio
阅读说明：本技术 一种等化学计量比三元氧化物薄膜的制备方法 (Preparation method of ternary oxide film with equal stoichiometric ratio ) 是由 汤振杰 于 2020-06-16 设计创作，主要内容包括：本发明公开了一种等化学计量比三元氧化物薄膜(MO<Sub>x</Sub>)<Sub>0.5</Sub>(NO<Sub>x</Sub>)<Sub>0.5</Sub>的制备方法,利用原子层沉积系统先在基底上沉积1个M循环,而后再沉积1个N循环,如此交替重复生长,实现薄膜组分的等化学计量比,操作简单,可控可调。(The invention discloses a ternary oxide thin film (MO) with equal stoichiometric ratio x ) 0.5 (NO x ) 0.5 The preparation method comprises the steps of depositing 1M cycles on a substrate by using an atomic layer deposition system, then depositing 1N cycles, and alternately and repeatedly growing, so that the stoichiometric ratio of the components of the film is realized, and the preparation method is simple to operate, controllable and adjustable.)
1. A method for preparing ternary oxide films with equal stoichiometric ratio is characterized by comprising the following specific steps:
a) putting a substrate into a proper amount of absolute ethyl alcohol, ultrasonically cleaning for 1 minute, ultrasonically cleaning for 3 minutes by using deionized water to remove surface impurities, blow-drying by using high-purity nitrogen, placing on a sample table in an atomic layer chemical vapor deposition cavity, and growing (MO)x)0.5(NOx)0.5In the process of metal oxide film, M can be selected from one of Hf, Zr and Ti, and the metal source used is tetra (dimethylamino) hafnium (Hf (N (CH)3)2)4) Tetrakis (dimethylamino) zirconium (Zr (N (C))2H5)2)4) Tetra (dimethylamino) titanium (Ti (N (CH))3)2)4) N can be selected from Si and AL, and the metal source is trimethylaluminum (Al (CH)3)3) Tris (dimethylamino) silicon (Si (N (CH))3)2)3) The oxygen source may be ozone andoptionally one of water, the substrate temperature is in the range of 180-400 ℃, and the source temperature is in the range of 180-200 ℃;
b) deposition on substrates using atomic layer chemical vapor deposition (MO)x)0.5(NOx)0.5When the metal oxide film is formed, MO is firstly grown for 1 cyclexThen growing 1 cycle of NOxAlternately repeating the growth in such a way that the number of times of alternately repeating the growth is selected according to the thickness requirement of the film;
c) after growth (MO)x)0.5(NOx)0.5The in-situ heat preservation time of the metal oxide film is controlled within the range of 100-120 minutes, so that the components in the film are ensured to be diffused at the substrate temperature, and the film with uniform components is formed.
2. The method of claim 1, wherein the in situ incubation is under vacuum.
Technical Field
The invention relates to a preparation method of a ternary oxide film with equal stoichiometric ratio.
Background
With the rapid development of microelectronic devices, ternary metal oxide thin films are increasingly used. The components of the metal oxide film directly affect the electrical properties of the film, so the regulation and control of the film components become the key point of research of the industry personnel. Physical sputtering is a relatively common film preparation method, ceramic targets with different component ratios are prepared by means of a solid-phase sintering method, and then an oxide film is prepared by sputtering. In order to avoid the defects of the traditional process, the invention provides a preparation Method (MO) for preparing an equal stoichiometric ratio ternary oxide film by utilizing an atomic layer chemical vapor deposition systemx)0.5(NOx)0.5The method realizes the preparation of the ternary oxide film with equal stoichiometric ratio by alternately and repeatedly growing the M source and the N source with the same deposition times, and has simple operation, controllability and adjustability.
Disclosure of Invention
The invention provides a method for preparing an equal stoichiometric ratio ternary oxide film (MO) by an atomic layer chemical vapor deposition systemx)0.5(NOx)0.5The preparation process comprises the following steps:
a) putting a substrate into a proper amount of absolute ethyl alcohol, ultrasonically cleaning for 1 minute, ultrasonically cleaning for 3 minutes by using deionized water to remove surface impurities, blow-drying by using high-purity nitrogen, placing on a sample table in an atomic layer chemical vapor deposition cavity, and growing (MO)x)0.5(NOx)0.5In the process of metal oxide film, M can be selected from one of Hf, Zr and Ti, and the metal source used is tetra (dimethylamino) hafnium (Hf (N (CH)3)2)4) Tetrakis (dimethylamino) zirconium (Zr (N (C))2H5)2)4) Tetra (dimethylamino) titanium (Ti (N (CH))3)2)4) N can be selected from Si and AL, and the metal source is trimethylaluminum (Al (CH)3)3) Tris (dimethylamino) silicon (Si (N (CH))3)2)3) The oxygen source can be selected from ozone and water, the substrate temperature is in the range of 180-;
b) deposition on substrates using atomic layer chemical vapor deposition (MO)x)0.5(NOx)0.5When the metal oxide film is formed, MO is firstly grown for 1 cyclexThen growing 1 cycle of NOxAlternately repeating the growth in such a way that the number of times of alternately repeating the growth is selected according to the thickness requirement of the film;
c) after growth (MO)x)0.5(NOx)0.5The in-situ heat preservation time of the metal oxide film is controlled within the range of 100-120 minutes, so that the components in the film are ensured to be diffused at the substrate temperature, and the film with uniform components is formed.
Drawings
FIG. 1: atomic layer chemical vapor deposition system for growing equimolar ratio metal oxide thin film (MO)x)0.5(NOx)0.5Is described.
FIG. 2: atomic layer chemical vapor deposition system growth (HfO)2)0.5(Al2O3)0.5Schematic representation of metal oxide thin films.
Detailed Description