阅读说明：本技术 单片式混合集成声波谐振器阵列及其制备方法 (Monolithic hybrid integrated acoustic resonator array and preparation method thereof ) 是由 欧欣 周鸿燕 张师斌 郑鹏程 黄凯 游天桂 于 2020-07-03 设计创作，主要内容包括：本申请涉及一种单片式混合集成声波谐振器阵列及其制备方法,声波谐振器阵列包括支撑衬底；位于支撑衬底上表面的压电层；压电层包括多个厚度不相同的区域；压电层与支撑衬底接触的一面平整或压电层远离支撑衬底的一面平整；位于压电层上表面的叉指电极阵列；叉指电极阵列中几何特征相同的多个叉指电极与多个厚度不相同的区域一一对应；叉指电极阵列中几何特征不同的多个叉指电极在压电层上的对应区域的厚度相同；且几何特征不同的多个叉指电极对应的多个目标声波模式不同。本申请中声波谐振器阵列的工作频率可以同时覆盖低频、中频和高频频段,如此,可以解决实际应用中需要将分立声波谐振器进行系统级集成导致的工艺、设计复杂等问题。(The application relates to a monolithic hybrid integrated acoustic resonator array and a preparation method thereof, wherein the acoustic resonator array comprises a supporting substrate; a piezoelectric layer on the upper surface of the support substrate; the piezoelectric layer includes a plurality of regions of differing thickness; the surface of the piezoelectric layer, which is in contact with the support substrate, is flat or the surface of the piezoelectric layer, which is far away from the support substrate, is flat; an array of interdigitated electrodes on the upper surface of the piezoelectric layer; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to a plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of interdigital electrodes with different geometrical characteristics on the piezoelectric layer in the interdigital electrode array are the same; and a plurality of target acoustic wave modes corresponding to a plurality of interdigital electrodes with different geometrical characteristics are different. The working frequency of the acoustic wave resonator array can simultaneously cover low frequency, medium frequency and high frequency bands, so that the problems of complex process and design and the like caused by system-level integration of discrete acoustic wave resonators in practical application can be solved.)

1. A monolithic hybrid integrated acoustic resonator array, comprising:

a support substrate;

a piezoelectric layer located on the upper surface of the support substrate; the piezoelectric layer includes a plurality of regions of differing thickness; the surface of the piezoelectric layer, which is in contact with the support substrate, is flat; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate;

an array of interdigitated electrodes on the upper surface of the piezoelectric layer; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to the regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of interdigital electrodes with different geometrical characteristics on the piezoelectric layer in the interdigital electrode array are the same; and a plurality of target acoustic wave modes corresponding to the plurality of interdigital electrodes with different geometrical characteristics are different.

2. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein the period of the interdigital electrodes is the same for the regions with different thicknesses.

3. The array of monolithic hybrid integrated acoustic resonators according to claim 1, wherein the thickness of corresponding areas on the piezoelectric layer of said interdigital electrode array having the same geometrical characteristics but different periods are the same.

4. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein at least two interdigital electrodes having different periods are included in the interdigital electrodes corresponding to the regions having different thicknesses.

5. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein a ratio of a thickness of each of the plurality of regions of differing thickness to the corresponding target acoustic wavelength is greater than or equal to 0.05 and less than or equal to 0.5.

6. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein the supporting substrate is a single layer structure;

or;

the support substrate is a multilayer structure; the multilayer structure includes a substrate layer and at least one material layer.

7. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein the material of the supporting substrate comprises any of silicon, silicon oxide, silicon carbide, sapphire, diamond, gallium arsenide, quartz, lithium niobate, lithium tantalate, aluminum nitride, gallium oxide, and zinc oxide.

8. The monolithic hybrid integrated acoustic resonator array of claim 6, wherein the material of the material layer comprises any one of silicon, silicon oxide, silicon carbide, sapphire, diamond, gallium arsenide, quartz, lithium niobate, lithium tantalate, aluminum nitride, gallium oxide, zinc oxide, benzocyclobutene, polyimide, polydimethylsiloxane, and polystyrene.

9. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein the material of the piezoelectric layer comprises any of lithium niobate, potassium niobate, lithium tantalate, aluminum nitride, quartz, and zinc oxide.

10. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein the plurality of target acoustic modes comprises at least two of rayleigh, shear, symmetric and anti-symmetric lamb wave modes.

11. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein the piezoelectric layer is an X-cut lithium niobate film; the target acoustic wave modes excited in the piezoelectric layer include shear wave modes and symmetric lamb wave modes;

an included angle between the propagation direction of the interdigital electrode corresponding to the shear wave mode and the Y axis of the acoustic wave resonator array is less than or equal to 20 degrees;

and an included angle between the propagation direction of the interdigital electrode corresponding to the symmetrical lamb wave mode and the Y axis of the acoustic wave resonator array is less than or equal to 60 degrees.

12. The monolithic hybrid integrated acoustic resonator array of claim 1, further comprising a bottom electrode;

the bottom electrode is located between the support substrate and the piezoelectric layer.

13. The monolithic hybrid integrated acoustic resonator array of claim 1, wherein the support substrate has a cavity structure for suspending the piezoelectric layer.

14. A monolithic hybrid integrated acoustic resonator array, comprising:

a support substrate;

the filling layer is positioned on the upper surface of the supporting substrate;

the piezoelectric layer is positioned on the upper surface of the filling layer; the piezoelectric layer includes a plurality of regions of differing thickness; the surface of the piezoelectric layer, which is far away from the supporting substrate, is flat; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate;

an array of interdigitated electrodes on the upper surface of the piezoelectric layer; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to the regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of interdigital electrodes with different geometrical characteristics on the piezoelectric layer in the interdigital electrode array are the same; and a plurality of target acoustic wave modes corresponding to the plurality of interdigital electrodes with different geometrical characteristics are different.

15. A preparation method of a monolithic hybrid integrated acoustic resonator array is characterized by comprising the following steps:

obtaining a support substrate;

forming a piezoelectric layer on the support substrate;

thinning the piezoelectric layer to form a plurality of areas with different thicknesses; the surface of the piezoelectric layer, which is in contact with the support substrate, is flat; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate;

depositing an interdigital electrode array on the thinned piezoelectric layer; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to the regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of interdigital electrodes with different geometrical characteristics on the piezoelectric layer in the interdigital electrode array are the same; and a plurality of target acoustic wave modes corresponding to the plurality of interdigital electrodes with different geometrical characteristics are different.

16. The method of claim 15, wherein said obtaining a support substrate comprises:

obtaining a substrate layer;

and forming at least one material layer on the substrate layer to obtain the support substrate.

17. The method of claim 15, wherein forming a piezoelectric layer on the support substrate comprises:

forming the piezoelectric layer on the support substrate by an ion beam lift-off method and a bonding method;

or; forming the piezoelectric layer on the support substrate by a deposition method;

or; forming the piezoelectric layer on the support substrate by an epitaxial method;

or; the piezoelectric layer is formed on the support substrate by bonding and grinding.

18. The method of claim 15, wherein thinning the piezoelectric layer comprises:

and thinning the piezoelectric layer in a subarea way by any one of a low-energy ion irradiation method, an inductive coupling plasma etching method and a reactive ion etching method.

19. The method of claim 18, wherein the step of thinning the piezoelectric layer by sub-division through any one of low energy ion irradiation, inductively coupled plasma etching, and reactive ion etching comprises:

and covering a mask corresponding to the secondary thinning area on the upper surface of the piezoelectric layer.

20. The method of claim 18, wherein thinning the piezoelectric layer by any one of low energy ion irradiation, inductively coupled plasma etching, reactive ion etching comprises:

a patterned grating is added at the ion source to adjust the direction and energy of the emergent ions in different areas.

21. The method of claim 15, wherein after forming the piezoelectric layer on the support substrate and before thinning the piezoelectric layer, further comprising:

photolithography is performed on a surface of the piezoelectric layer to form a pattern.

22. The method of claim 15, wherein the thickness of each interdigital electrode in the interdigital electrode array is less than or equal to the maximum thickness in the plurality of regions having different thicknesses.

23. The method of claim 15, wherein after obtaining the support substrate and before forming the piezoelectric layer on the support substrate, further comprising:

and forming a bottom electrode on the supporting substrate.

24. The method of claim 15, wherein an XRD spectrum of the piezoelectric layer has a full width at half maximum of less than 0.5 degrees.

25. The method of claim 15, wherein after obtaining the support substrate and before forming the piezoelectric layer on the support substrate, further comprising:

and etching the support substrate to form a cavity structure.

26. A preparation method of a monolithic hybrid integrated acoustic resonator array is characterized by comprising the following steps:

obtaining the piezoelectric material after ion implantation;

regionalizing and thinning the piezoelectric material to form a plurality of regions with different thicknesses;

depositing a filling layer on the thinned piezoelectric material;

polishing the filling layer to flatten the surface, thereby obtaining the polished filling layer and the piezoelectric material;

transferring the polished filling layer and the piezoelectric material to the obtained support substrate;

peeling the transferred piezoelectric material to obtain a piezoelectric layer with a flat upper surface; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate;

depositing an array of interdigitated electrodes on an upper surface of the piezoelectric layer; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to the regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of interdigital electrodes with different geometrical characteristics on the piezoelectric layer in the interdigital electrode array are the same; and a plurality of target acoustic wave modes corresponding to the plurality of interdigital electrodes with different geometrical characteristics are different.

27. The method of claim 26, wherein the fill layer is a temperature compensating material;

the acoustic impedance of the filling layer is larger than that of the supporting substrate; the thermal conductivity of the filling layer is stronger than that of the support substrate.

Technical Field

The application relates to the technical field of semiconductors, in particular to a monolithic hybrid integrated acoustic resonator array and a preparation method thereof.

Background

The filter has a frequency selection function, i.e., allows signals with a desired frequency to pass through, and suppresses signals with an undesired frequency from passing through, and is an extremely important component in the field of microwave communication, and is widely used in the fields of mobile communication, satellite communication, radar, and other microwave communications. Filters are usually composed of a plurality of resonators interconnected by means of electrodes.

The coming of the fifth Generation mobile communication technology (5th-Generation, 5G) has a great impact on the filter industry. The 5G network includes two sections of frequencies: the filter comprises an FR1 frequency band and an FR2 frequency band, wherein the FR1 frequency band is a current main frequency band, and the frequency range is 450MHz-6GHz, which puts higher requirements on the working frequency range of the filter; meanwhile, the requirements for the performance of the filter (such as high frequency, low loss, etc.) are also increasing.

Surface Acoustic Wave (SAW) filters are widely used in 2G receiver front-ends as well as duplexers and receive filters. The SAW filter integrates low insertion loss and good inhibition performance, and has large bandwidth and small volume; but because of the acoustic surface wave sound velocity and the limitation of electrode preparation, the method is generally only suitable for applications below 2 GHz. Above 2GHz, Bulk Acoustic Wave (BAW) filters have performance advantages.

Therefore, the communication of the current mobile terminal usually adopts the SAW filter and the BAW filter to cooperatively meet the requirements of different frequency bands, which causes the problems of increased process cost, complex design and manufacturing process, and the like.

Disclosure of Invention

The embodiment of the application provides a single-chip hybrid integrated acoustic wave resonator array and a preparation method thereof, which can realize the single-chip integration of a multi-band filter, thereby solving the problems of complex process, complex design and high cost caused by the need of cooperative work of a surface acoustic wave filter, a bulk acoustic wave filter and the like in actual requirements.

In one aspect, a monolithic hybrid integrated acoustic resonator array comprises:

a support substrate;

a piezoelectric layer on the upper surface of the support substrate; the piezoelectric layer includes a plurality of regions of differing thickness; the surface of the piezoelectric layer, which is contacted with the supporting substrate, is flat; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate;

an array of interdigitated electrodes on the upper surface of the piezoelectric layer; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to a plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of interdigital electrodes with different geometrical characteristics on the piezoelectric layer in the interdigital electrode array are the same; and a plurality of target acoustic wave modes corresponding to a plurality of interdigital electrodes with different geometrical characteristics are different.

Optionally, the periods of the plurality of interdigital electrodes corresponding to the plurality of regions with different thicknesses are all the same.

Optionally, the thickness of corresponding areas on the piezoelectric layer of a plurality of interdigital electrodes in the interdigital electrode array, which have the same geometric characteristics but different periods, is the same.

Optionally, the plurality of interdigital electrodes corresponding to the regions with different thicknesses at least include two interdigital electrodes with different periods.

Optionally, a ratio of the thickness of each of the multiple regions with different thicknesses to the corresponding target acoustic wave wavelength is greater than or equal to 0.05 and less than or equal to 0.5.

Optionally, the support substrate is a single layer structure;

or;

the support substrate is a multilayer structure; the multilayer structure includes a substrate layer and at least one material layer.

Optionally, the material of the support substrate includes any one of silicon, silicon oxide, silicon carbide, sapphire, diamond, gallium arsenide, quartz, lithium niobate, lithium tantalate, aluminum nitride, gallium oxide, and zinc oxide.

Alternatively, the material of the material layer includes any one of silicon, silicon oxide, silicon carbide, sapphire, diamond, gallium arsenide, quartz, lithium niobate, lithium tantalate, aluminum nitride, gallium oxide, zinc oxide, benzocyclobutene, polyimide, polydimethylsiloxane, and polystyrene.

Optionally, the material of the piezoelectric layer includes any one of lithium niobate, potassium niobate, lithium tantalate, aluminum nitride, quartz, and zinc oxide.

Optionally, the plurality of target acoustic wave modes includes at least two of rayleigh wave modes, shear wave modes, symmetric lamb wave modes and anti-symmetric lamb wave modes.

Optionally, the piezoelectric layer is an X-cut lithium niobate thin film; the target acoustic wave modes excited in the piezoelectric layer include shear wave modes and symmetric lamb wave modes;

an included angle between the propagation direction of the interdigital electrode corresponding to the shear wave mode and the Y axis of the acoustic wave resonator array is less than or equal to 20 degrees;

and an included angle between the propagation direction of the interdigital electrode corresponding to the symmetrical lamb wave mode and the Y axis of the acoustic wave resonator array is less than or equal to 60 degrees.

Optionally, the device further comprises a bottom electrode;

the bottom electrode is located between the support substrate and the piezoelectric layer.

Optionally, the support substrate has a cavity structure, and the cavity structure is used for enabling the piezoelectric layer to be in a suspended state.

In another aspect, an embodiment of the present application provides a monolithic hybrid integrated acoustic resonator array, including:

a support substrate;

a filling layer positioned on the upper surface of the supporting substrate;

the piezoelectric layer is positioned on the upper surface of the filling layer; the piezoelectric layer includes a plurality of regions of differing thickness; the surface of the piezoelectric layer, which is far away from the support substrate, is flat; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate;

an array of interdigitated electrodes on the upper surface of the piezoelectric layer; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to a plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of interdigital electrodes with different geometrical characteristics on the piezoelectric layer in the interdigital electrode array are the same; and a plurality of target acoustic wave modes corresponding to a plurality of interdigital electrodes with different geometrical characteristics are different.

In another aspect, an embodiment of the present application provides a method for manufacturing a monolithic hybrid integrated acoustic resonator array, including:

obtaining a support substrate;

forming a piezoelectric layer on a support substrate;

thinning the piezoelectric layer to form a plurality of areas with different thicknesses; the surface of the piezoelectric layer, which is contacted with the supporting substrate, is flat; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate;

depositing an interdigital electrode array on the thinned piezoelectric layer; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to a plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of interdigital electrodes with different geometrical characteristics on the piezoelectric layer in the interdigital electrode array are the same; and a plurality of target acoustic wave modes corresponding to a plurality of interdigital electrodes with different geometrical characteristics are different.

Optionally, obtaining a support substrate, comprising:

obtaining a substrate layer;

and forming at least one material layer on the substrate layer to obtain the support substrate.

In another aspect, embodiments of the present application provide a method of forming a piezoelectric layer on a support substrate, including:

forming a piezoelectric layer on a support substrate by an ion beam lift-off method and a bonding method;

or; forming a piezoelectric layer on a support substrate by a deposition method;

or; forming a piezoelectric layer on a support substrate by an epitaxial method;

or; the piezoelectric layer is formed on the support substrate by bonding and grinding.

Optionally, thinning the piezoelectric layer includes:

and thinning the piezoelectric layer in a subarea way by any one of a low-energy ion irradiation method, an inductive coupling plasma etching method and a reactive ion etching method.

Optionally, the piezoelectric layer is thinned in a partitioned manner by any one of a low-energy ion irradiation method, an inductively coupled plasma etching method and a reactive ion etching method, including:

and covering a mask corresponding to the secondary thinning area on the upper surface of the piezoelectric layer.

Optionally, thinning the piezoelectric layer by any one of a low-energy ion irradiation method, an inductively coupled plasma etching method, and a reactive ion etching method, including:

a patterned grating is added at the ion source to adjust the direction and energy of the emergent ions in different areas.

Optionally, after forming the piezoelectric layer on the support substrate, before thinning the piezoelectric layer, the method further includes:

the surface of the piezoelectric layer is subjected to photolithography to form a pattern.

Optionally, the thickness of each interdigital electrode in the interdigital electrode array is less than or equal to the maximum thickness in a plurality of regions with different thicknesses.

Optionally, after obtaining the supporting substrate, before forming the piezoelectric layer on the supporting substrate, the method further includes:

a bottom electrode is formed on a support substrate.

Optionally, the full width at half maximum of the XRD spectrum of the piezoelectric layer is less than 0.5 degree.

Optionally, after obtaining the supporting substrate, before forming the piezoelectric layer on the supporting substrate, the method further includes:

and etching the support substrate to form a cavity structure.

In another aspect, an embodiment of the present application provides a method for manufacturing a monolithic hybrid integrated acoustic resonator array, including:

obtaining the piezoelectric material after ion implantation;

regionalizing and thinning the piezoelectric material to form a plurality of regions with different thicknesses;

depositing a filling layer on the thinned piezoelectric material;

polishing the filling layer to flatten the surface, thereby obtaining the polished filling layer and the piezoelectric material;

transferring the polished filling layer and the piezoelectric material to the obtained support substrate;

peeling the transferred piezoelectric material to obtain a piezoelectric layer with a flat upper surface; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate;

depositing an array of interdigitated electrodes on the upper surface of the piezoelectric layer; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to a plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of interdigital electrodes with different geometrical characteristics on the piezoelectric layer in the interdigital electrode array are the same; and a plurality of target acoustic wave modes corresponding to a plurality of interdigital electrodes with different geometrical characteristics are different.

Optionally, the filling layer is made of a temperature compensation material;

the acoustic impedance of the filling layer is larger than that of the supporting substrate; the thermal conductivity of the fill layer is greater than the thermal conductivity of the support substrate.

The monolithic hybrid integrated acoustic resonator array and the preparation method thereof have the following beneficial effects:

the monolithic hybrid integrated acoustic resonator array comprises a supporting substrate; a piezoelectric layer on the upper surface of the support substrate; the piezoelectric layer includes a plurality of regions of differing thickness; the surface of the piezoelectric layer, which is in contact with the support substrate, is flat or the surface of the piezoelectric layer, which is far away from the support substrate, is flat; the acoustic impedance of the piezoelectric layer is less than the acoustic impedance of the support substrate; an array of interdigitated electrodes on the upper surface of the piezoelectric layer; a plurality of interdigital electrodes with the same geometric characteristics in the interdigital electrode array correspond to a plurality of regions with different thicknesses one by one; the thicknesses of corresponding areas of a plurality of interdigital electrodes with different geometrical characteristics on the piezoelectric layer in the interdigital electrode array are the same; and a plurality of target acoustic wave modes corresponding to a plurality of interdigital electrodes with different geometrical characteristics are different. In the application, considering that the working frequency of the acoustic wave resonator is closely related to the sound velocity of a target acoustic wave mode, the period of the interdigital electrode, the ratio (h/lambda) of the thickness of the piezoelectric layer to the wavelength of the target acoustic wave, for an area with the same thickness of the piezoelectric layer, different target acoustic wave modes are excited on the piezoelectric layer by designing the geometric characteristics of different interdigital electrodes to regulate and control the working frequency of the corresponding acoustic wave resonator; for the area with the same thickness of the piezoelectric layer and the same geometric characteristics of the interdigital electrodes (namely the same target acoustic wave mode), the resonant frequency of the corresponding acoustic wave resonator is regulated and controlled by adjusting the period of the interdigital electrodes; for the acoustic wave resonators with the same target acoustic wave mode and interdigital electrode period, the value of h/lambda is changed by adjusting the thickness of the corresponding area on the piezoelectric layer, so that the resonant frequency of the corresponding acoustic wave resonator is regulated and controlled; in addition, under the condition of determining the geometric characteristics of the interdigital electrodes (namely selecting a target acoustic wave mode), when the resonant frequency of the corresponding acoustic wave resonator is regulated and controlled by adjusting the period of the interdigital electrodes, the thickness of the area on the corresponding piezoelectric layer can be adjusted at the same time, so that a larger electromechanical coupling coefficient is obtained purposefully. The working frequency of the acoustic wave resonator can be regulated and controlled by singly or in combination of selecting a target acoustic wave mode, adjusting the period of the interdigital electrode and adjusting the thickness of the corresponding area of the piezoelectric layer. Therefore, the monolithic hybrid integrated acoustic wave resonator array covering the low-frequency band to the high-frequency band can be realized on the whole piezoelectric layer, the monolithic integration of the multi-band acoustic filter can be realized, and the problems of complex process, complex design, high cost and the like caused by the need of cooperative work of an SAW resonator, a BAW resonator and the like in actual requirements are solved.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a monolithic hybrid integrated acoustic resonator array according to an embodiment of the present disclosure;

fig. 2 is a top view of a monolithic hybrid integrated resonator array provided in an embodiment of the present application;

fig. 3 is a schematic diagram of an admittance curve of an acoustic wave resonator SH0mode according to the prior art provided by an embodiment of the present application;

fig. 4 is a schematic diagram of admittance curves of a monolithic hybrid integrated acoustic resonator array SH0mode according to an embodiment of the present application;

FIG. 5 is a schematic diagram of a variation curve of sound velocity with h/λ according to an embodiment of the present application;

fig. 6 is a schematic diagram of admittance curves of a monolithic hybrid integrated acoustic resonator array SH0mode according to an embodiment of the present application;

fig. 7 is a schematic diagram of admittance curves of a monolithic hybrid integrated acoustic resonator array S0mode according to an embodiment of the present application;

fig. 8 is a schematic structural diagram of another monolithic hybrid integrated acoustic resonator array provided in the embodiments of the present application;

fig. 9 is a schematic flowchart of a method for manufacturing a monolithic hybrid integrated acoustic resonator array according to an embodiment of the present disclosure;

fig. 10 is a schematic flowchart of another method for manufacturing a monolithic hybrid integrated acoustic resonator array according to an embodiment of the present disclosure;

fig. 11 is a schematic diagram of a manufacturing process of a monolithic hybrid integrated acoustic resonator array according to an embodiment of the present application.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or server that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.