阅读说明：本技术 一种导引板mems探针结构与转接层的对接方法 (Docking method of guide plate MEMS (micro-electromechanical systems) probe structure and switching layer ) 是由 王艾琳 赵梁玉 于 2020-08-14 设计创作，主要内容包括：本发明一种导引板MEMS探针结构与转接层的对接方法属于IC制作业技术领域,具体涉及微机电系统制造、半导体裸芯测试及相关关键技术；该方法通过七个关键步骤实现导引板MEMS探针结构与转接层的对接；本发明不仅公开了一种导引板MEMS探针结构与转接层的对接方法,而且公开了一种MEMS探针卡的全新制作工艺,从MEMS探针卡的结构,到导引板MEMS探针结构模板烧刻设备与方法,面向导引板MEMS探针结构模板烧刻的探针定位方法,再到导引板MEMS探针结构制作方法,最后到导引板MEMS探针结构与转接层的对接装置与方法,最终实现亚微米级MEMS探针卡的制造。(The invention relates to a butt joint method of a guide plate MEMS probe structure and a switching layer, belonging to the technical field of IC manufacturing industry, in particular to the manufacturing of a micro electro mechanical system, the testing of a semiconductor bare chip and related key technologies; the method realizes the butt joint of the guide plate MEMS probe structure and the switching layer through seven key steps; the invention discloses a butt joint method of a guide plate MEMS probe structure and an adapter layer, and discloses a brand new manufacturing process of an MEMS probe card.)

1. A docking method of a guide plate MEMS probe structure and a switching layer is characterized by comprising the following steps:

step a, placing a guide plate MEMS probe structure on a support plate (8-7);

b, sticking a structure consisting of the reinforcing piece (1), the PCB (2) and the switching layer (3) to the lower part of the two-dimensional translation table (8-8);

c, horizontally irradiating parallel light, and adjusting the lifting platform (8-4) according to the size of a light spot on the second image sensor (8-3) to enable the coating film protrusion on the guide plate (4) to be conjugated with the image surface of the second image sensor (8-3), wherein the light spot on the second image sensor (8-3) is minimum;

d, calculating the coordinates of each MEMS probe (5) in the guide plate MEMS probe structure in the horizontal plane according to the position of the light spot on the second image sensor (8-3);

e, adjusting the positions of the two-dimensional translation tables (8-8) according to the coordinates of the MEMS probes (5) in the horizontal plane in the step d, so that the positions of the reinforcing piece (1), the PCB (2), the switching layer (3), the guide plate (4) and the MEMS probes (5) correspond to each other;

step f, adjusting the air cylinders (8-6) to enable the switching layer (3) to be adhered to the MEMS probe structure of the guide plate;

and g, heating the reinforcing piece (1) by the two-dimensional translation table (8-8) to enable the structure formed by the reinforcing piece (1), the PCB (2) and the switching layer (3) to fall off from the two-dimensional translation table (8-8).

2. The method for interfacing a guide plate MEMS probe structure with an interposer layer as claimed in claim 1, wherein in step b, the structure consisting of the stiffener (1), the PCB (2) and the interposer layer (3) is pasted in alignment with the end of the two-dimensional translation stage (8-8).

3. The method for docking a guide plate MEMS probe structure with an adapter layer according to claim 2 is applied to a docking device of the guide plate MEMS probe structure with the adapter layer, and the docking device of the guide plate MEMS probe structure with the adapter layer comprises a third prism (8-1), an imaging objective lens (8-2), a second image sensor (8-3), a lifting table (8-4), a bracket (8-5), a cylinder (8-6), a support plate (8-7) and a two-dimensional translation table (8-8).

Technical Field

The invention discloses a method for butting a guide plate MEMS probe structure and a switching layer, belongs to the technical field of IC manufacturing industry, and particularly relates to manufacturing of a micro-electro-mechanical system, testing of a semiconductor bare chip and related key technologies.

Background

The probe card is an important technology in the chip manufacturing process, before the chip is packaged, the probe on the probe card is directly contacted with the welding pad or the lug on the chip, the chip signal is led out, and then the automatic measurement is realized by matching with a peripheral test instrument and software control, so that the defective product is screened out, and the product yield is ensured.

With the development of micro-electro-mechanical systems (MEMS) technology, the size of a chip is smaller and smaller, and reaches millimeter level, and the integration level inside the chip is higher and higher, and reaches micron level, even submicron level, which requires the volume of a probe card to be reduced along with the probe, so that the probe manufacturing faces new challenges.

With respect to probe card manufacturing, a number of prior art techniques have been disclosed, which in chronological order, come in sequence, including:

02100980.5 wafer level probe card and method of making the same

03802632.5 Probe card and method for manufacturing the same

200580041495.1 manufacturing method of probe card including detecting probe

200580049139.4 Probe card and method of manufacturing the same

200680009115.0 Probe card and method of manufacturing the same

200680027726.8 method and apparatus for manufacturing probe card

200680031627.7 Probe card and method of manufacturing the same

200610103270.0 manufacturing method of probe card

200710110928.5 Probe card for testing and manufacturing method thereof

200710162691.5A method for manufacturing conductive film, structure thereof, and probe card with the conductive film

200710306120.4 manufacturing method of probe card

200810088590.2 manufacturing method and device for probe card

200810099307.6 Probe card and method of manufacturing the same

200910207279.X probe card manufacturing method comprising detection probe, probe card and probe card inspection system

201010000429.2A microprobe structure and its manufacturing method

201010551930.8 Probe card, method of manufacturing the same, and method of testing semiconductor device

201010602334.8 Probe card Structure and method of assembling the same

201110229503.2 Probe card and its manufacturing method

201220520534.3 Probe card mounting Table and Probe measuring device

201310303035.8 Probe card and method of manufacturing the same

201410262345.4 Probe card and method of manufacturing the same

201410328012.7 Board for Probe card, method of manufacturing the same, and Probe card

201510543596.4 Integrated Circuit Probe card, method of manufacturing the same, and apparatus and method for inspecting the Probe card

201510929670.6 Probe card and method of manufacturing the same

201710242941.X guide plate for probe card and method of manufacturing the guide plate for probe card

201711042258.8 Probe for Probe card and method of manufacturing the same

201810863816.5 Probe card, testing apparatus including the same, and related manufacturing method

201810871834.8 method for manufacturing vertical probe card and silicon substrate structure

201880030578.8 method for manufacturing multi-layer structure of probe card for testing equipment of electronic device

201910435481.1 space transformer, probe card and manufacturing method thereof

201910781444.6 apparatus for probe card manufacturing, inspection and maintenance and method of using the same

201911021188.7 guide plate for probe card, method for manufacturing the same, and probe card provided with the same

Therefore, from the beginning of the new century to the present, various national scholars and various enterprises make extensive trials and innovations in probe card manufacturing, and strive for probe cards to meet the test requirements of semiconductor devices along with the development of semiconductor technology.

Among these techniques, there are some for manufacturing a probe card with a larger size, and some for avoiding needle burning during a test, and although there are also techniques for manufacturing a probe card with a higher integration, it is still impossible to realize a probe card with a probe size in a sub-micron order. The reason is that, for the probe with the size of submicron order, the bending of the probe cannot be effectively avoided in the manufacturing process, and once the probe is slightly bent, the probe will contact another probe with the distance of submicron order, which causes the manufacturing failure.

Disclosure of Invention

The invention discloses a method for butting a guide plate MEMS probe structure and an adapter layer, which aims at the manufacturing requirement of a submicron-order probe card, and further comprises a brand-new manufacturing process of the MEMS probe card, namely a device and a method for burning and carving a guide plate MEMS probe structure template from the structure of the MEMS probe card, a probe positioning method facing the burning and carving of the guide plate MEMS probe structure template, a manufacturing method of the guide plate MEMS probe structure, and finally a device and a method for butting the guide plate MEMS probe structure and the adapter layer, so that the manufacturing of the submicron-order MEMS probe card is finally realized.

The purpose of the invention is realized as follows:

a docking method of a guide plate MEMS probe structure and a switching layer comprises the following steps:

step a, placing a guide plate MEMS probe structure on a support plate;

b, sticking a structure consisting of the reinforcing piece, the PCB and the switching layer to the lower part of the two-dimensional translation table;

c, horizontally irradiating the parallel light, and adjusting the lifting platform according to the size of a light spot on the second image sensor to enable the coating film protrusion on the guide plate to be conjugated with the image surface of the second image sensor, wherein the light spot on the second image sensor is minimum;

d, calculating the coordinates of each MEMS probe in the MEMS probe structure of the guide plate in the horizontal plane according to the position of the light spot on the second image sensor;

e, adjusting the position of the two-dimensional translation table according to the coordinates of each MEMS probe in the horizontal plane in the step d, so that the positions of the reinforcing piece, the PCB, the switching layer, the guide plate and the MEMS probes correspond to each other;

step f, adjusting the cylinder to enable the switching layer to be adhered to the MEMS probe structure of the guide plate;

and g, heating the reinforcing piece by the two-dimensional translation table, so that the structure formed by the reinforcing piece, the PCB and the switching layer falls off from the two-dimensional translation table.

In the butt joint method of the guide plate MEMS probe structure and the switching layer, in the step b, the structure formed by the reinforcing piece, the PCB and the switching layer is aligned and adhered to the end part of the two-dimensional translation table.

The docking method of the guide plate MEMS probe structure and the switching layer is applied to a docking device of the guide plate MEMS probe structure and the switching layer, and the docking device of the guide plate MEMS probe structure and the switching layer comprises a third prism, an imaging objective lens, a second image sensor, a lifting table, a support, a cylinder, a support plate and a two-dimensional translation table.

Has the advantages that:

the invention discloses a method for butting a guide plate MEMS probe structure with an adapter layer, which further comprises a brand new manufacturing process of the MEMS probe card, and comprises a device and a method for burning and carving a guide plate MEMS probe structure template from the structure of the MEMS probe card, a probe positioning method facing the burning and carving of the guide plate MEMS probe structure template, a method for manufacturing the guide plate MEMS probe structure, and finally a device and a method for butting the guide plate MEMS probe structure with the adapter layer, wherein the key technologies work in a coordinated way, are absent, and can be used as a whole to finally realize the manufacturing of the submicron MEMS probe card.

The invention discloses a device and a method for burning and engraving a template of a guide plate MEMS probe structure, which can be used for manufacturing a submicron guide plate MEMS probe structure template, thereby laying a device and method foundation for providing a new method for manufacturing the guide plate MEMS probe structure; it should be noted here that in the apparatus, a lens for amplification may also be added between the plane mirror and the first image sensor to realize imaging of sub-micron level images in a micron pixel level imaging device; and a lens with a shrinking effect is added between the laser array and the MEMS probe structure template of the quasi-guide plate, so that the effect of realizing submicron-level burning and carving of the non-submicron-level laser array is realized.

The invention discloses a probe positioning method for template burning and carving of a guide plate MEMS probe structure.

The invention also discloses a method for manufacturing the guide plate MEMS probe structure by utilizing the guide plate MEMS probe structure template.

Fifthly, aiming at the specific process of the application, the invention also designs a butt joint technology of the guide plate MEMS probe structure and the switching layer, the probe card is divided into an upper part and a lower part, wherein the upper part is formed by the reinforcing piece, the PCB and the switching layer, the lower part is formed by the guide plate MEMS probe structure, and the butt joint of the two parts is realized through the butt joint device and the butt joint method of the guide plate MEMS probe structure and the switching layer, so that the manufacture of the MEMS probe card is finally completed.

Drawings

FIG. 1 is a schematic diagram of a MEMS probe card.

Fig. 2 is a schematic structural diagram of a template burning device for a guide plate MEMS probe structure.

FIG. 3 is a schematic view showing a structure of a slit exploding plate.

Fig. 4 is a flow chart of a guide plate MEMS probe structure template burning method.

Fig. 5 is a flow chart of a probe positioning method facing a guide plate MEMS probe structure template burn.

FIG. 6 is a flow chart of a method of fabricating a guide plate MEMS probe structure.

FIG. 7 is a schematic structural diagram of a docking device for the guide plate MEMS probe structure and the interposer.

FIG. 8 is a flow chart of a method of interfacing a guide plate MEMS probe structure with an interposer.

In the figure: 1 reinforcing piece, 2PCB (printed Circuit Board), 3 switching layer, 4 guide plate, 5MEMS probe, 6 quasi-guide plate MEMS probe structure template, 7-1 light source, 7-2 pinhole, 7-3 collimating mirror, 7-4x slit expanding plate, 7-5y slit expanding plate, 7-45-1 coaxial ladder roller, 7-45-2 stay wire, 7-45-3 slit plate, 7-6 first prism, 7-7 plane reflector, 7-8 second prism, 7-9 first image sensor, 7-10 controller, 7-11 laser array, 8-1 third prism, 8-2 imaging objective lens, 8-3 second image sensor, 8-4 lifting platform, 8-5 support, 8-6 cylinder, 8-7 support plate, 8-8 two-dimensional translation stage.

Detailed Description

The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.