阅读说明：本技术 功率器件的敏感区域检测方法、计算机设备及存储介质 (Sensitive area detection method of power device, computer equipment and storage medium ) 是由 彭超 雷志锋 张战刚 何玉娟 黄云 于 2020-06-30 设计创作，主要内容包括：本申请涉及一种功率器件的敏感区域检测方法、计算机设备及存储介质。功率器件的敏感区域检测方法,用于检测功率器件的单粒子烧毁敏感区域,包括：获取功率器件的器件信息；根据器件信息构建仿真模型；将仿真模型中的功率器件的仿真结构划分为多个仿真区域；基于仿真模型仿真模拟试验带电粒子入射至处于关态且在预设偏置电压下的功率器件的仿真区域的过程根据仿真模拟结果判断各仿真区域是否发生单粒子烧毁；如果仿真区域发生单粒子烧毁,则确定该仿真区域为敏感区域。本申请可以有效降低敏感区域的检测成本。(The application relates to a method for detecting a sensitive area of a power device, a computer device and a storage medium. The method for detecting the sensitive area of the power device is used for detecting the single event burnout sensitive area of the power device and comprises the following steps: acquiring device information of a power device; constructing a simulation model according to the device information; dividing a simulation structure of a power device in a simulation model into a plurality of simulation areas; judging whether each simulation area is burnt by single particles or not according to a simulation result in the process of simulating the incidence of the charged particles to the simulation area of the power device in an off state and under a preset bias voltage based on the simulation model; and if the simulation area is burnt by the single particles, determining the simulation area as a sensitive area. The method and the device can effectively reduce the detection cost of the sensitive area.)

1. A method for detecting a sensitive area of a power device is used for detecting a single-particle burnt sensitive area of the power device, and is characterized by comprising the following steps:

acquiring device information of the power device;

constructing a simulation model according to the device information;

dividing a simulation structure of the power device in the simulation model into a plurality of simulation areas;

simulating the process of testing the charged particles to be incident to the simulation area of the power device in an off state and under a preset bias voltage based on the simulation model;

judging whether each simulation area is burnt by single particles or not according to a simulation result;

and if the simulation area is burnt by the single particles, determining the simulation area as a sensitive area.

2. The method for detecting the sensitive area of the power device as claimed in claim 1, wherein the dividing the simulation structure of the power device in the simulation model into a plurality of simulation areas comprises:

taking the length direction of the power device as a first direction;

the simulation structure of the power device is divided along a first direction to generate the plurality of simulation areas.

3. The method for detecting the sensitive area of the power device as claimed in claim 1, wherein the dividing the simulation structure of the power device in the simulation model into a plurality of simulation areas comprises:

taking the length direction of the power device as a first direction, and taking the thickness direction of the power device as a second direction;

the simulation structure of the power device is divided along a first direction and a second direction to generate the plurality of simulation areas.

4. The method for detecting the sensitive area of the power device as claimed in claim 2 or 3, wherein the plurality of simulation areas are 2n same simulation areas, n is a positive integer greater than 1, and the 2n simulation areas are symmetrically distributed about a central plane, the central plane being perpendicular to the first direction;

the process of simulating the charged particles incident to the simulation area of the power device in the off state and under the preset bias voltage based on the simulation model comprises the following steps:

setting the power device to be in an off state, wherein the bias voltage of the power device is at a preset bias voltage;

and simulating the process of the charged particles of the test incident to the n simulation areas positioned on one side of the central plane of the power device based on the simulation model.

5. The method for detecting the sensitive area of the power device according to claim 1, wherein the simulating, based on the simulation model, the process of simulating the charged particles incident to each simulation area of the power device in the off state and under the preset bias voltage further comprises:

acquiring a relation curve between the single-particle burnout threshold voltage and the linear energy transfer value of the charged particles;

selecting the preset bias voltage and a linear energy transfer value corresponding to the preset bias voltage according to the relation curve;

and selecting the test charged particles according to the linear energy transfer value corresponding to the preset bias voltage.

6. The method for detecting the sensitive area of the power device according to claim 1, wherein the power device is a metal-oxide-semiconductor field effect transistor, and the determining whether the simulation area is burnt by the single particle according to the simulation result comprises:

and judging whether the simulation areas are burnt by single particles or not according to the drain end current of the power device.

7. The method for detecting the sensitive area of the power device as claimed in claim 1, wherein the simulation model is a three-dimensional process computer aided design simulation model.

8. The method of claim 1, wherein the charged particles are heavy ions.

9. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that the processor, when executing the computer program, implements the steps of the method of any of claims 1 to 8.

10. A computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, carries out the steps of the method of any one of claims 1 to 8.

Technical Field

The present application relates to the field of electronic technologies, and in particular, to a method for detecting a sensitive region of a power device, a computer device, and a storage medium.

Background

As early as the eighties of the last century, the field of aerospace applications has begun to focus on single-particle burnout (SEB) failures of power devices caused by radiation particles. When charged particles (e.g., heavy ions) are incident on the sensitive region of the power device, the ionization generates electron-hole pairs. The electron-hole pairs are separated under the action of an electric field and move in opposite directions, so that electrons are gathered to a high potential position, and holes are gathered to a low potential position, and further, the power device is induced to be burnt by single particles.

The traditional technology generally determines the sensitive area of the power device through irradiation test, so that the sensitive area is difficult to accurately determine. However, the single event effect of radiation particles causing failure is a destructive effect. Therefore, the traditional method needs a large amount of samples to obtain statistical results, and the test cost is high.

Disclosure of Invention

In view of the above, it is desirable to provide a method for detecting a sensitive area of a power device, a computer device, and a storage medium, which can reduce the test cost.

A method for detecting a sensitive area of a power device, which is used for detecting a single-particle burnt sensitive area of the power device, comprises the following steps:

acquiring device information of the power device;

constructing a simulation model according to the device information;

dividing a simulation structure of the power device in the simulation model into a plurality of simulation areas;

simulating the process of testing the charged particles to be incident to the simulation area of the power device in an off state and under a preset bias voltage based on the simulation model;

judging whether each simulation area is burnt by single particles or not according to a simulation result;

and if the simulation area is burnt by the single particles, determining the simulation area as a sensitive area.

In one embodiment, the dividing the simulation structure of the power device in the simulation model into a plurality of simulation regions includes:

taking the length direction of the power device as a first direction;

the simulation structure of the power device is divided into a plurality of simulation areas along a first direction.

In one embodiment, the dividing the simulation structure of the power device in the simulation model into a plurality of simulation regions includes:

taking the length direction of the power device as a first direction, and taking the thickness direction of the power device as a second direction;

the simulation structure of the power device is divided along a first direction and a second direction to generate the plurality of simulation areas.

In one embodiment, the plurality of simulation regions are 2n identical simulation regions, n is a positive integer greater than 1, and the 2n simulation regions are symmetrically distributed about a central plane, the central plane being perpendicular to the first direction;

the process of simulating the charged particles incident to the simulation area of the power device in the off state and under the preset bias voltage based on the simulation model comprises the following steps:

setting the power device to be in an off state, wherein the bias voltage of the power device is at a preset bias voltage;

and simulating the process of the charged particles of the test incident to the n simulation areas positioned on one side of the central plane of the power device based on the simulation model.

In one embodiment, the simulation of the process of testing the charged particles incident to each simulation region of the power device in the off state and under the preset bias voltage based on the simulation model further includes:

acquiring a relation curve between the single-particle burnout threshold voltage and the linear energy transfer value of the charged particles;

selecting the preset bias voltage and a linear energy transfer value corresponding to the preset bias voltage according to the relation curve;

and selecting the test charged particles according to the linear energy transfer value corresponding to the preset bias voltage.

In one embodiment, the power device is a metal-oxide-semiconductor field effect transistor, and the determining whether the simulation regions are damaged by single particles according to the simulation result includes:

and judging whether the simulation areas are burnt by single particles or not according to the drain end current of the power device.

In one embodiment, the simulation model is a three-dimensional process computer-aided design simulation model.

In one embodiment, the charged particles are heavy ions.

A computer device comprising a memory and a processor, the memory storing a computer program which when executed by the processor performs the method steps of:

acquiring device information of the power device;

constructing a simulation model according to the device information;

dividing a simulation structure of the power device in the simulation model into a plurality of simulation areas;

simulating the process of testing the charged particles to be incident to the simulation area of the power device in an off state and under a preset bias voltage based on the simulation model;

judging whether each simulation area is burnt by single particles or not according to a simulation result;

and if the simulation area is burnt by the single particles, determining the simulation area as a sensitive area.

A computer-readable storage medium, on which a computer program is stored which, when being executed by a processor, carries out the method steps of:

acquiring device information of the power device;

constructing a simulation model according to the device information;

dividing a simulation structure of the power device in the simulation model into a plurality of simulation areas;

simulating the process of testing the charged particles to be incident to the simulation area of the power device in an off state and under a preset bias voltage based on the simulation model;

judging whether each simulation area is burnt by single particles or not according to a simulation result;

and if the simulation area is burnt by the single particles, determining the simulation area as a sensitive area.

The method for detecting the sensitive area of the power device is used for detecting the single event burnout sensitive area of the power device, and comprises the following steps: acquiring device information of a power device; constructing a simulation model according to the device information; dividing a simulation structure of a power device in a simulation model into a plurality of simulation areas; judging whether each simulation area is burnt by single particles or not according to a simulation result in the process of simulating the incidence of the charged particles to the simulation area of the power device in an off state and under a preset bias voltage based on the simulation model; and if the simulation area is burnt by the single particles, determining the simulation area as a sensitive area.

Therefore, the detection cost of the sensitive area can be effectively reduced by constructing the simulation model, dividing the simulation structure of the power device in the simulation model into a plurality of simulation areas and determining the sensitive area in each simulation area according to the simulation result.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the descriptions of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following descriptions are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

FIG. 1 is a schematic flow chart of a method for detecting a sensitive area of a power device in one embodiment;

FIG. 2 is a diagram illustrating a simulated structure of a power device in one embodiment;

FIG. 3 is a schematic diagram of the drain side current of a power device over time in one embodiment;

FIG. 4 is a schematic diagram illustrating a structural simulation partition of a power device in one embodiment;

FIG. 5 is a schematic diagram illustrating a simulated division of a power device structure in another embodiment;

fig. 6 is a graph illustrating a relationship between a threshold voltage of the SEB of the power device and a LET value of the charged particles in one embodiment.

Detailed Description

To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Embodiments of the present application are set forth in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

It will be understood that the terms "first," "second," and the like, as used herein, may be used herein to describe directions, but these directions are not limited by these terms. These terms are only used to distinguish two directions.

As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises/comprising," "includes" or "including," etc., specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

In one embodiment, as shown in fig. 1, a method for detecting a sensitive region of a power device is provided, where the method is used to detect a single event burnout sensitive region of the power device, and includes:

in step S1, device information of the power device is acquired.

The device information of the power device may include device structure, physical size, doping concentration, etc. The device information such as the device structure, the physical size, the doping concentration and the like of the power device can be obtained by carrying out reverse analysis on the power device.

The power device of the present application may be a metal-oxide-semiconductor field effect transistor (MOSFET), a power Diode (Diode), an Insulated Gate Bipolar Transistor (IGBT), or the like.

And step S2, building a simulation model according to the device information.

The simulation model may be a three-dimensional process computer aided design (TCAD) simulation model or the like. When it is a TCAD simulation model and the power device is a MOSFET, the simulation structure of the power device can refer to fig. 2.

Step S3, dividing the simulation structure of the power device in the simulation model into a plurality of simulation areas.

Step S4, simulating the process of the test of the charged particles entering the simulation area of the power device in the off state and under the preset bias voltage based on the simulation model.

The bias voltage is the electrode voltage of the power device. The power device is exemplified as a metal-oxide-semiconductor field effect transistor. At this time, when the power device is in an off state, the gate and the drain are grounded, and the drain is connected to the drain voltage. The bias voltage is the drain voltage.

Power devices typically fail in the off state. And when the power device is in an off state, the single event effect conditions of the power device are different under different bias voltages. Therefore, it is necessary to perform simulation by injecting test charged particles into the power device in an off state and under a predetermined bias voltage.

Therefore, the power device can be set to be in the off state at first in this step, and the bias voltage of the power device is at the preset bias voltage. Then, the process of testing the charged particles to be incident to the plurality of simulation areas is simulated based on the simulation model.

The test charged particles are charged particles which can be burnt by single particles under a preset bias voltage. Specifically, the charged particles may be heavy ions or the like.

And step S5, judging whether each simulation area is burnt by single particles or not according to the simulation result.

The electrical parameter values of the power device can be obtained through simulation, and whether each simulation area is burnt by single particles or not can be judged through whether the relevant electrical parameter values are normal or not. For example, when the power device is an N-type MOSFET, whether the single-event burnout occurs can be determined by whether the drain current is normal or not.

When charged particles are incident to a sensitive region of the power device, electron-hole pairs generated by ionization are separated under the action of an electric field and move in opposite directions. Wherein electrons move to a high potential and holes are collected to a low potential. Thus, for an N-type MOSFET, ionized hole accumulation can occur in the P-type body region causing the source/body/drain parasitic npn bipolar transistor to turn on. Avalanche impact ionization can be further induced under the action of high bias voltage of a drain end, and the rapidly increased drain end current can cause single-particle burning, so that the power MOSFET is permanently damaged.

Therefore, whether the single-particle burnout occurs or not can be judged according to whether the current of the drain terminal is normal or not. When the generated drain current is as shown in a curve 2 in fig. 3, and the current gradually recovers to the off-state current after the current is increased suddenly, the device is considered to have no SEB. On the contrary, the generated drain current is as in the case of curve 1 shown in fig. 3, and after the current is suddenly increased, the large current state can be continuously maintained, and it is considered that the SEB occurs in the device.

Step S6, if the simulation area is burnt by single particles, the simulation area is determined to be a sensitive area. Because the SEB occurs in the sensitive area of the power device only by the charged particles, whether the charged particles are the sensitive area can be judged according to whether the simulation areas are burnt by single particles or not.

In the embodiment, a simulation model is built, a simulation structure of a power device in the simulation model is divided into a plurality of simulation areas, and a sensitive area is determined in each simulation area according to a simulation result. The set of all the single sensitive areas constitutes the SEB sensitive area of the whole power device. Therefore, the detection cost of the sensitive area can be effectively reduced in an analog mode.

In one embodiment, step S3 (dividing the simulation structure of the power device in the simulation model into a plurality of simulation regions) includes:

in step S311, the length direction of the power device is set as the first direction.

Referring to fig. 4, the length direction of the power device is the x-axis direction, which may be taken as the first direction.

In step S312, the simulation structure of the power device is divided into a plurality of simulation regions along the first direction.

Specifically, the simulation structure of the power device may be equally divided into a plurality of simulation regions along the x-axis direction. Of course, the components may not be divided according to actual conditions, and the application is not limited to the components.

In this case, in the simulation process, the test charged particles may be sequentially incident on different simulation regions of the power device from the surface of the power device.

Many power device structures are symmetrical. Therefore, with continued reference to fig. 4, the plurality of simulation regions of the present embodiment may be 2n identical simulation regions, where n is a positive integer greater than 1. And, the 2n simulation regions are symmetrically distributed about a central plane, which is perpendicular to the first direction (i.e., the x-axis direction). Specifically, in fig. 4, 5 simulation regions are obtained by dividing the region in the positive axis direction of the X-axis by X1 to X5, and 5 simulation regions (not shown) are obtained by dividing the region in the negative axis direction of the X-axis by-X1 to-X5. A total of 10 simulation regions are available at this time.

At this time, step S4 (simulating a process of testing the incident of the charged particles to the simulation region of the power device in the off state and at the preset bias voltage based on the simulation model) may include:

in step S41, the power device is set to be in an off state, and the bias voltage is at a preset bias voltage.

And step S42, simulating and testing the process of the charged particles entering the n simulation areas on one side of the central plane of the power device based on the simulation model.

At this time, whether the simulation area of one side of the central plane of the power device is subjected to single event burnout or not can be judged according to simulation results of n simulation areas on the side, and then which simulation areas on the side are sensitive areas can be determined. And the other n simulation areas on the other side of the central plane are symmetrically distributed with the simulation area on the other side, so that which simulation areas are sensitive areas can be correspondingly determined in the other n simulation areas on the other side. At this time, only half of the simulation area is subjected to simulation, so that the simulation process can be simplified.

Of course, in this embodiment, the test charged particles may be sequentially incident on each simulation region of the power device to perform simulation.

In the above embodiment, the test charged particles may be sequentially incident on the different simulation regions of the power device from the surface of the power device, so that the method is suitable for a case where the SEB occurs in the device due to the incident of the charged particles in the external space on the power device.

However, the charged particles that cause SEB conditions in the device may also be secondary particles from other radiation particle generation (e.g., nuclear reaction secondary particles generated by neutron generation nuclear reactions). Such charged particles are generated inside the device after radiation particles such as neutrons are incident into the power device from the outside, so that the action start position is located inside the device. Also, such charged particles are generally small in energy relative to charged particles in the external space, and thus have a limited range within the device.

Based on this, in order to enable the sensitive region of the device where the charged particles cause SEB to occur to be also determined accurately, in another embodiment, the step S3 (dividing the simulation structure of the power device in the simulation model into a plurality of simulation regions) includes:

in step S321, the longitudinal direction of the power device is set as the first direction, and the thickness direction of the power device is set as the second direction.

Referring to fig. 5, the length direction of the power device is the x-axis direction, which may be taken as the first direction. The longitudinal direction of the power device is the y-axis direction, which may be taken as the second direction.

In step S322, the simulation structure of the power device is divided into a first direction and a second direction to generate a plurality of simulation regions.

Specifically, the simulation structure of the power device may be equally divided into a plurality of simulation regions in the x-axis direction as well as the y-axis direction. Of course, the components may not be divided according to actual conditions, and the application is not limited to the components.

In this case, in the simulation process, the test charged particles may be sequentially incident on different simulation regions of the power device from the surface of the power device.

Also, many power devices are structurally symmetrical. Therefore, with continuing reference to fig. 5, the present embodiment may equally divide the simulation structure of the power device into 2n along the x-axis direction and the y-axis direction₁2n identical simulation regions, n₁And m is a positive integer greater than 1. And, the 2n simulation regions are symmetrically distributed about a central plane, which is perpendicular to the first direction (i.e., the x-axis direction). Specifically, in fig. 5, the simulation regions are divided into X1-X5 along the positive axis direction of the X-axis and Y1-Y9 along the Y-axis direction, for example, in this case, a plurality of simulation regions of 9 rows and 5 columns can be obtained along the positive axis direction of the X-axis, for example, the first row in fig. 5 includes S₁₁、S₂₁、S₃₁、S₄₁And S₅₁The 5 simulation regions, where the first column includes S₁₁、S₁₂、S₁₃、S₁₄、S₁₅、S₁₆、S₁₇、S₁₈And S₁₉These 9 simulation regions. Similarly, in the negative direction of the x-axis, a plurality of dummy regions (not shown) of 9 rows and 5 columns can be obtained.

At this time, step S4 (simulation of the process of testing the incident of the charged particles to the simulation region of the power device in the off state and under the preset bias voltage based on the simulation model) may also include:

in step S41, the power device is set to be in an off state, and the bias voltage is at a preset bias voltage.

And step S42, simulating and testing the process of the charged particles entering the n simulation areas on one side of the central plane of the power device based on the simulation model.

At this time, the power device may be configured according to n located on the side of the central plane of the power device₁And judging whether the simulation area on the side is burnt by single particles or not according to the simulation results of the m simulation areas, and further determining which simulation areas on the side are sensitive areas. And another n on the other side of the central plane₁The m simulation regions are symmetrically distributed with the simulation region at the side, so that the other n simulation regions at the other side₁And in the m simulation areas, correspondingly determining which simulation areas are sensitive areas. At this time, only half of the simulation area is subjected to simulation, so that the simulation process can be simplified.

Of course, in this embodiment, the test charged particles may be sequentially incident on each simulation region of the power device to perform simulation.

The above-described embodiment divides the simulation structure of the power device in the device length direction (first direction) and the device thickness direction (second direction) to generate a plurality of simulation regions. For the width direction of the device, the cross-sectional structures along the width direction are the same, so that the width direction of the device does not need to be divided, and the simulation process is simplified. Of course, in order to make the sensitive region more precise, the device width direction may also be divided, which is not limited in the present application.

In one embodiment, before step S4 (simulating a process of testing charged particles incident to a simulation region of a power device in an off state and at a preset bias voltage based on a simulation model), the method further includes:

and step S01, acquiring a relation curve between the single-particle burnout threshold voltage and the linear energy transfer value of the charged particles.

Linear Energy Transfer (LET), used to describe the energy lost by ionization per unit distance of incidence of charged particles (e.g., heavy ions) into a material, is typically expressed in MeV-cm²/mg。

Before the test, the power device MOFET in an off state can be irradiated by charged particles with a certain LET value, so that the minimum drain terminal bias voltage which correspondingly enables the power device to generate the SEB is obtained, and the minimum bias voltage of the power device to generate the SEB can be obtained. By irradiating the power device with the charged particles having different LET values, a curve of the SEB minimum bias voltage of the power device with the LET value of the charged particles as an abscissa and the SEB minimum bias voltage as an ordinate, which is a change with the LET value of the charged particles, can be obtained, that is, a relationship curve between the SEB threshold voltage and the LET value of the charged particles (refer to fig. 6), i.e., the SEB threshold voltage, that is, the minimum bias voltage can be obtained.

During testing, the relation curve can be obtained by searching the charged particle irradiation historical data of the device. Alternatively, when there is no historical data, then a charged particle irradiation test needs to be performed to obtain the curve.

And step S02, selecting a preset bias voltage and a linear energy transfer value corresponding to the preset bias voltage according to the relation curve.

One point of the relationship curve may be selected to obtain LET values and SEB threshold voltages corresponding thereto as LET1 and VSEB1, respectively, as shown in fig. 2. The drain terminal is biased by VSEB1, Vd ═ VSEB1, in TCAD simulation.

Step S03, selecting test charged particles according to the linear energy transfer value corresponding to the preset bias voltage.

At this time, charged particles having an LET value greater than or equal to LET1 can be conveniently selected as the test charged particles.

It should be understood that, although the steps in the flowchart of fig. 1 are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least a portion of the steps in fig. 1 may include multiple steps or multiple stages, which are not necessarily performed at the same time, but may be performed at different times, which are not necessarily performed in sequence, but may be performed in turn or alternately with other steps or at least a portion of the other steps or stages.

In one embodiment, a computer device is provided, comprising a memory and a processor, the memory having a computer program stored therein, the processor implementing the following steps when executing the computer program:

in step S1, device information of the power device is acquired.

And step S2, building a simulation model according to the device information.

Step S3, dividing the simulation structure of the power device in the simulation model into a plurality of simulation areas.

Step S4, simulating the process of the test of the charged particles entering the simulation area of the power device in the off state and under the preset bias voltage based on the simulation model.

And step S5, judging whether each simulation area is burnt by single particles or not according to the simulation result.

Step S6, if the simulation area is burnt by single particles, the simulation area is determined to be a sensitive area.

In one embodiment, the processor, when executing the computer program, further performs the steps of: in step S311, the length direction of the power device is set as the first direction. In step S312, the simulation structure of the power device is divided into a plurality of simulation regions along the first direction.

In one embodiment, the processor, when executing the computer program, further performs the steps of: in step S321, the longitudinal direction of the power device is set as the first direction, and the thickness direction of the power device is set as the second direction. In step S322, the simulation structure of the power device is divided into a first direction and a second direction to generate a plurality of simulation regions.

In one embodiment, the plurality of simulation regions is 2n identical simulation regions, n is a positive integer greater than 1, and the 2n simulation regions are symmetrically distributed about a central plane, the central plane being perpendicular to the first direction, and the processor when executing the computer program further implements the steps of: in step S41, the power device is set to be in an off state, and the bias voltage is at a preset bias voltage. And step S42, simulating and testing the process of the charged particles entering the n simulation areas on one side of the central plane of the power device based on the simulation model.

In one embodiment, the processor, when executing the computer program, further performs the steps of: and step S01, acquiring a relation curve between the single-particle burnout threshold voltage and the linear energy transfer value of the charged particles. And step S02, selecting a preset bias voltage and a linear energy transfer value corresponding to the preset bias voltage according to the relation curve. Step S03, selecting test charged particles according to the linear energy transfer value corresponding to the preset bias voltage.

In one embodiment, a computer-readable storage medium is provided, having a computer program stored thereon, which when executed by a processor, performs the steps of:

in step S1, device information of the power device is acquired.

And step S2, building a simulation model according to the device information.

Step S3, dividing the simulation structure of the power device in the simulation model into a plurality of simulation areas.

Step S4, simulating the process of the test of the charged particles entering the simulation area of the power device in the off state and under the preset bias voltage based on the simulation model.

And step S5, judging whether each simulation area is burnt by single particles or not according to the simulation result.

Step S6, if the simulation area is burnt by single particles, the simulation area is determined to be a sensitive area.

In one embodiment, the computer program when executed by the processor further performs the steps of: in step S311, the length direction of the power device is set as the first direction. In step S312, the simulation structure of the power device is divided into a plurality of simulation regions along the first direction.

In one embodiment, the computer program when executed by the processor further performs the steps of: in step S321, the longitudinal direction of the power device is set as the first direction, and the thickness direction of the power device is set as the second direction. In step S322, the simulation structure of the power device is divided into a first direction and a second direction to generate a plurality of simulation regions.

In one embodiment, the plurality of simulation regions is 2n identical simulation regions, n is a positive integer greater than 1, and the 2n simulation regions are symmetrically distributed about a central plane, the central plane being perpendicular to the first direction, the computer program when executed by the processor further implementing the steps of: in step S41, the power device is set to be in an off state, and the bias voltage is at a preset bias voltage. And step S42, simulating and testing the process of the charged particles entering the n simulation areas on one side of the central plane of the power device based on the simulation model.

In one embodiment, the computer program when executed by the processor further performs the steps of: and step S01, acquiring a relation curve between the single-particle burnout threshold voltage and the linear energy transfer value of the charged particles. And step S02, selecting a preset bias voltage and a linear energy transfer value corresponding to the preset bias voltage according to the relation curve. Step S03, selecting test charged particles according to the linear energy transfer value corresponding to the preset bias voltage.

It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above can be implemented by hardware related to instructions of a computer program, which can be stored in a non-volatile computer-readable storage medium, and when executed, can include the processes of the embodiments of the methods described above. Any reference to memory, storage, database or other medium used in the embodiments provided herein can include at least one of non-volatile and volatile memory. Non-volatile memory may include Read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical storage, or the like. Volatile Memory can include Random Access Memory (RAM) or external cache Memory. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM), among others.

In the description herein, references to the description of "one embodiment" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, a schematic description of the above terminology may not necessarily refer to the same embodiment or example.

The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above examples only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.