阅读说明：本技术 高计数率电阻板室探测器的制备方法 (Method for preparing high counting rate resistance plate chamber detector ) 是由 周意 王旭 孙勇杰 尚伦霖 张广安 鲁志斌 刘建北 张志永 邵明 于 2020-06-24 设计创作，主要内容包括：本公开提供一种高计数率电阻板室探测器的制备方法,包括：步骤S1：对玻璃样品进行预处理；步骤S2：在预处理后的玻璃样品表面及孔内制备DLC阻性薄膜,完成DLC阻性玻璃的制备；步骤S3：基于DLC阻性玻璃制备电阻板室结构；以及步骤S4：对电阻板室结构进行封装,完成高计数率电阻板室探测器的制备。(The invention provides a preparation method of a high counting rate resistance plate chamber detector, which comprises the following steps: step S1: pretreating a glass sample; step S2: preparing DLC resistive films on the surface and in the holes of the pretreated glass sample to finish the preparation of the DLC resistive glass; step S3: preparing a resistance plate chamber structure based on DLC (diamond-like carbon) resistive glass; and step S4: and packaging the resistance plate chamber structure to finish the preparation of the high counting rate resistance plate chamber detector.)

1. A method for preparing a high count rate resistance plate chamber detector comprises the following steps:

step S1: pretreating a glass sample;

step S2: preparing DLC resistive films on the surface and in the holes of the pretreated glass sample to finish the preparation of the DLC resistive glass;

step S3: preparing a resistance plate chamber structure based on DLC (diamond-like carbon) resistive glass; and

step S4: and packaging the resistance plate chamber structure to finish the preparation of the high counting rate resistance plate chamber detector.

2. The method of claim 1, wherein the step S1 comprises:

substep S11: punching a plurality of through holes on a glass sample; and

substep S12: and cleaning the punched glass sample.

3. The method of claim 1, wherein said step S2 includes:

substep S21: sputtering and cleaning the surface of the high-purity graphite target;

substep S22: sputtering and depositing a DLC film on one surface of a glass sample;

substep S23: re-loading the sample after sampling, and depositing a DLC resistive film on the other surface of the glass sample; and

substep S24: sampling and testing are performed.

4. The method of claim 1, wherein said step S3 includes:

substep S31: preprocessing materials required by manufacturing a detector;

substep S32: preparing a lower glass electrode structure; and

substep S33: a resistive plate chamber structure is fabricated on the lower glass electrode structure.

5. The method of claim 4, wherein said substep S32 comprises:

substep S321: sticking a honeycomb plate on the outer surface of the bottom printed circuit board; and

substep S322: an insulating film is arranged on the inner surface of the bottom printed circuit board, the high-voltage electrode is exposed, a carbon film is arranged on the surface of the high-voltage electrode, and then DLC (diamond-like carbon) resistive glass is installed to form a lower glass electrode structure.

6. The method of claim 4, wherein said substep S33 comprises:

substep S331: an annular insulating gasket is arranged on the through hole on the lower glass electrode;

substep S332: installing the other piece of DLC resistive glass on the gasket, enabling the through hole of the DLC resistive glass to face the annular gasket, and adhering the two pieces of DLC resistive glass together by epoxy resin glue in the gasket to form a stable air gap; and

substep S333: and (4) mounting a top printed circuit board structure on the DLC resistive glass mounted in the substep S332 to complete the preparation of the resistive board chamber structure.

7. The method of claim 2 wherein the through holes have a diameter of 0.2mm to 1mm and the distance between adjacent through holes is 30mm to 120 mm.

8. The method of claim 6 wherein said annular insulating spacer has a thickness of 1mm to 2mm, a central bore diameter of 2mm to 4mm, and an outer diameter of 6mm to 10 mm.

9. The method of claim 8 wherein the annular insulating spacers and the glue beads are ensured to cover the through holes in the DLC resistive glass.

10. The method of claim 5 wherein said insulating film has a thickness of 0.1mm to 0.2 mm.

Technical Field

The disclosure relates to the technical field of particle detectors, in particular to a preparation method of a high-counting-rate resistance plate chamber detector.

Background

In current large high-energy physical collider experiments, complex detector spectrometer systems measure secondary particles generated by collisions, of which the measurement of μ is an important part. Firstly, cosmic ray particles (muons) on the earth surface can pass through a detector spectrometer system and leave signals interfering with normal collision experiments, and the muon detectors are required to be used for eliminating cosmic ray muon signals; in addition, in the collision experiment, many physical processes are involved in muons, and the muons generated by the collision need to be accurately measured, so that a detector capable of measuring the muons with high efficiency is needed. In addition, the mu detectors are distributed on the outermost layer of the detector spectrometer with the diameter of tens of meters, and in a collider experiment, a large-area mu detector is needed, so that the unit cost of the mu detector is required to be low. The Resistive Plate Chambers (RPCs) have the advantages of low cost of unit channel, high detection efficiency (close to 100%) for muons, and the like, and have been widely applied to muon detectors in a plurality of large-scale high-energy physical collider experiments in China and abroad, such as BEPC/BSEIII spectrometers of beijing institute of china high-energy physics, LHC/ATLAS spectrometers of european nuclear center, and the like. The RPC detector is stable in operation in actual operation as a mu-particle detector, is excellent in detection of mu, and contributes to discovery of many new physical achievements, such as discovery of the siegers boson called "shangdi particle" in 2012.

RPC is a gas detector operating in avalanche or streamer mode, and was first proposed in 1981 by r. The structure and the basic working principle of the RPC detector are shown in FIG. 1: a uniform air gap of 1-2 mm is formed between two resistance plates (bakelite plates or glass), under the action of proper working gas and an external electric field, charged particles passing through RPC generate primary ionization in the gas, then avalanche multiplication occurs, and an induction signal is generated on an external reading electrode. Because the RPC has narrow air gap and high electric field intensity, the development of avalanche is limited in a short range, thereby reducing time sloshing caused by uncertainty of an original primary ionization position and effectively improving time resolution capability. The semi-insulating property of the resistance plate ensures that the transmission process of the induction signal generated by the avalanche is transparent, and meanwhile, the semi-insulating property of the resistance plate can inhibit the phenomenon of streamer discharge easily generated in an air gap under an extremely high electric field environment, so that the RPC detector can stably and efficiently operate.

Although RPC detector has the advantages of good time resolution, high detection efficiency, low price and the like, the RPC detector can only work at low counting rate (hundreds of Hz/cm)²Magnitude) of the ambient. When the counting rate exceeds 1kHz/cm²During the process, relatively obvious leakage current begins to appear on the resistive plate, so that obvious partial pressure can be generated, an equivalent electric field in an avalanche region of the detector is reduced, the effective gas gain of the detector is reduced, the output signal of the RPC detector is reduced, the RPC detector cannot normally work, and the time resolution capacity of the detector is also reduced along with the increase of the counting rate. Therefore, reducing the voltage division across the resistive plate becomes a key to improving the RPC counting capability.

Using the existing high count rate resistive plate chamber detectors as an example, a detector with a lower bulk resistivity (10) is used¹⁰Ω·cm～10¹¹Omega cm) special glass replaces the common commercial glass/bakelite plate (10) used in the common resistor plate chamber detector¹²Ω·cm～10¹³Omega cm) can improve the counting rate capability of the resistance plate chamber detector to 20kHz/cm²Left and right. The low-resistance glass mainly has the following defects that the volume resistivity of the low-resistance glass is influenced by the raw material formula and the manufacturing process, the specific volume resistivity needs the specific formula and the manufacturing process, and when new application needs the new volume resistivity of the glass, the low-resistance glass needs to be researched and developed again to determine the proper formula and the manufacturing process, so that the research difficulty and the cost of a detector are increased. Secondly, the low-resistance glass has complex process and high manufacturing cost, the thickness of the glass when leaving the factory is very thick (more than 0.7mm), the surface finish is very poor, and the requirement of manufacturing an RPC detector cannot be metThe subsequent grinding and polishing of the glass is required, which results in a significant increase in the complexity and cost of the overall manufacturing process. Thirdly, even after subsequent grinding and polishing, the surface flatness of the low-resistance glass finally used for manufacturing the RPC detector is still greatly different from that of the common float glass, so that the detector has higher dark current and noise level when in operation.

With the continuous development of high-energy physical experiments, the energy and the brightness of the collider are continuously improved, and higher requirements are provided for the counting rate capability of the detector. For example, the currently-ongoing upgrading project of ATLAS detector spectrometer in the LHC collider of the European Nuclear center requires an RPC detector with higher counting rate capability, and the counting rate capability of the RPC detector is required to be more than 3kHz/cm². Therefore, the counting rate capability of the RPC detector must be improved, which has become a research hotspot in the research field of current gas detectors.

BRIEF SUMMARY OF THE PRESENT DISCLOSURE

Technical problem to be solved

Based on the above problems, the present disclosure provides a high count rate (count rate higher than 10 kHz/cm)²) A preparation method of a resistance plate chamber detector solves the technical problems that in the prior art, due to the fact that a resistance plate (glass) of the detector can generate obvious leakage current when the counting rate is high, obvious partial pressure can be generated, an equivalent electric field in an avalanche region of the detector is reduced, effective gas gain of the detector is lowered, output signals of an RPC detector are reduced, normal operation cannot be achieved, time resolution capacity of the detector is reduced along with increase of the counting rate, and the like.

(II) technical scheme

The invention provides a preparation method of a high counting rate resistance plate chamber detector, which comprises the following steps:

step S1: pretreating a glass sample;

step S2: preparing DLC resistive films on the surface and in the holes of the pretreated glass sample to finish the preparation of the DLC resistive glass;

step S3: preparing a resistance plate chamber structure based on DLC (diamond-like carbon) resistive glass; and

step S4: and packaging the resistance plate chamber structure to finish the preparation of the high counting rate resistance plate chamber detector.

In the embodiment of the present disclosure, step S1 includes:

substep S11: punching a plurality of through holes on a glass sample; and

substep S12: and cleaning the punched glass sample.

In an embodiment of the present disclosure, the step S2 includes:

substep S21: sputtering and cleaning the surface of the high-purity graphite target;

substep S22: sputtering and depositing a DLC film on one surface of a glass sample;

substep S23: re-loading the sample after sampling, and depositing a DLC resistive film on the other surface of the glass sample; and

substep S24: sampling and testing are performed.

In an embodiment of the present disclosure, the step S3 includes:

substep S31: preprocessing materials required by manufacturing a detector;

substep S32: preparing a lower glass electrode structure; and

substep S33: a resistive plate chamber structure is fabricated on the lower glass electrode structure.

In an embodiment of the present disclosure, the sub-step S32 includes:

substep S321: sticking a honeycomb plate on the outer surface of the bottom printed circuit board; and

substep S322: an insulating film is arranged on the inner surface of the bottom printed circuit board, the high-voltage electrode is exposed, a carbon film is arranged on the surface of the high-voltage electrode, and then DLC (diamond-like carbon) resistive glass is installed to form a lower glass electrode structure.

In an embodiment of the present disclosure, the sub-step S33 includes:

substep S331: an annular insulating gasket is arranged on the through hole on the lower glass electrode;

substep S332: installing the other piece of DLC resistive glass on the gasket, enabling the through hole of the DLC resistive glass to face the annular gasket, and adhering the two pieces of DLC resistive glass together by epoxy resin glue in the gasket to form a stable air gap; and

substep S333: and (4) mounting a top printed circuit board structure on the DLC resistive glass mounted in the substep S332 to complete the preparation of the resistive board chamber structure.

In the embodiment of the disclosure, the diameter of the through hole is 0.2 mm-1 mm, and the distance between the adjacent through holes is 30 mm-120 mm.

In the embodiment of the disclosure, the thickness of the annular insulating gasket is 1mm to 2mm, the diameter of the central hole is 2mm to 4mm, and the outer diameter is 6mm to 10 mm.

In the embodiment of the disclosure, it is ensured that the annular insulating spacer and the glue drop cover the through hole on the DLC resistive glass.

In the embodiment of the present disclosure, the thickness of the insulating film is 0.1mm to 0.2 mm.

(III) advantageous effects

According to the technical scheme, the preparation method of the high-counting-rate resistance plate chamber detector has at least one or part of the following beneficial effects:

(1) the surface resistance of the DLC resistive film deposited by the glass is relatively low, and the charge neutralization speed is accelerated;

(2) the glass is punched, and the DLC resistive film is deposited in the holes, so that the path required by charge neutralization is reduced, and the charge neutralization speed is further increased;

(3) the surface resistivity of the DLC film can be flexibly adjusted to meet different requirements;

(4) the manufacturing difficulty and cost of the high counting rate RPC detector are reduced;

(5) effectively expands the application range of the RPC detector.

Drawings

FIG. 1 is a schematic diagram of the structure and basic operation principle of a RPC detector in the prior art.

Fig. 2 is a schematic flow chart of a method for manufacturing a high count rate resistive plate chamber detector according to an embodiment of the present disclosure.

FIG. 3 is a schematic diagram of the composition and the working principle of a magnetron sputtering device for preparing DLC resistive glass according to an embodiment of the present disclosure.

Fig. 4 is a schematic cross-sectional structure diagram of a DLC resistive glass according to an embodiment of the disclosure.

Fig. 5 is a schematic cross-sectional structure diagram of a high count rate resistor board chamber prepared according to an embodiment of the disclosure.

Detailed Description

The invention provides a preparation method of a high counting rate resistance plate chamber detector, which comprises the steps of punching a small through hole on common float glass by a mechanical punching or laser punching technology, and then depositing a Diamond-like Carbon-based film (DLC) with the surface resistivity which is lower than that of the glass by several orders of magnitude on the surface and in the hole of the common float glass by a magnetron sputtering method, so as to change the electrical characteristics of the surface of the glass. By using the glass provided by the disclosure as a glass electrode of the RPC detector, the charge neutralization process is changed to be carried out along the surface of the DLC film with relatively low equivalent resistance, compared with the prior art that the charge longitudinally passes through the glass for neutralization, the speed of completing the process is increased, and the counting rate capability of the detector is effectively improved.

For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.

In an embodiment of the present disclosure, a method for manufacturing a high count rate resistance plate chamber detector is provided, which is shown in fig. 2 to 5, and includes:

step S1: pretreating a glass sample;

step S1 includes:

substep S11: punching a plurality of through holes on a glass sample;

the method comprises the steps of using common float glass, wherein the thickness of the glass is 0.4-0.6 mm, punching through holes with the diameter of 0.2-1 mm on a glass sample in a mechanical drilling or laser drilling mode, and enabling the distance between every two adjacent holes to be 30-120 mm.

The size of the glass is 12cm multiplied by 20cm, the thickness is 0.4mm, 3 through holes with the diameter of 0.2mm are punched on the surface of the glass by using a laser punching technology, and the hole distance is 60 mm.

Substep S12: and cleaning the punched glass sample.

The glass sample is ultrasonically cleaned in anhydrous acetone, and then the surface of the glass sample is kept dry and clean after being cleaned by using anhydrous alcohol.

In the embodiment of the disclosure, the glass surface is cleaned by ultrasonic cleaning in anhydrous acetone for 10 minutes, taken out and cleaned by ultrasonic cleaning in anhydrous ethanol for 5 minutes, and finally the glass surface is wiped dry by using a dust-free cloth dipped with the anhydrous ethanol, so that the glass surface is kept dry and clean.

Step S2: preparing DLC resistive films on the surface and in the holes of the pretreated glass sample to finish the preparation of the DLC resistive glass;

and depositing DLC resistive films with appropriate surface resistivity on the upper and lower surfaces of the pretreated glass substrate, plating DLC resistive films in the holes, and connecting the DLC resistive films on the upper and lower surfaces. And the surface resistivity of the diamond-like carbon-based film can be adjusted by changing the process parameters in the magnetron sputtering deposition process.

The step S2 includes:

substep S21: sputtering and cleaning the surface of the high-purity graphite target;

starting a vacuum pump of the coating equipment, vacuumizing the coating cavity until the vacuum degree is lower than 5 × 10^-5And when mbar exists, running a target washing program to carry out sputtering cleaning on the high-purity graphite target. Wherein the bias voltage is set to be 1V-200V, the sputtering power is set to be 4 kW-7 kW, high-purity argon with the flow of 100 sccm-200 sccm is introduced into the chamber, and the surface of the high-purity graphite target is cleaned for 20 minutes-40 minutes by sputtering.

In the embodiment of the disclosure, the surface of a high-purity graphite target of Hauzer850 equipment is cleaned by sputtering, wherein a coating cavity is vacuumized until the vacuum degree is lower than 5 × 10^-5mbar, running the edited target washing program to start sputtering cleaning of the target surface, wherein the bias voltage is set to be 50V, the sputtering power is set to be 4kW, high-purity argon with the flow rate of 200sccm is introduced into the chamber, and the surface of the high-purity graphite target is sputtered and cleaned for 20 minutes.

Substep S22: sputtering and depositing a DLC film on one surface of a glass sample;

clamping a dry and clean glass sample onOn the sample rotating frame in the coating equipment cavity, one side of the glass sample is blocked by using a piece of glass (serving as a baffle) with the same size, and the DLC resistive film is only deposited on the unblocked side, the cavity is closed, the vacuum pump system of the equipment is started, and the glass sample is heated to 150-300 ℃ while vacuumizing, and the glass sample is vacuumized to 5 × 10 ℃ while vacuumizing the cavity^-5And when the mbar is less than the mbar, starting sputtering coating. In the coating process, high-purity argon gas with the flow rate of 100 sccm-200 sccm and high-purity acetylene gas with the flow rate of 2 sccm-20 sccm are kept to be introduced, the rotating speed of a sample rotating frame is 1-3 r/min, the bias voltage of the sample is 1-200V, the sputtering power is 4-7 kW, and the sputtering deposition time is 10-20 min. And finally, depositing a DLC resistive film on one side and the side edges of the glass sample.

In an embodiment of the disclosure, opening the chamber and installing the glass sample comprises stacking a clean and dry glass sample with a piece of glass of the same size (12cm × 20cm), securing it to a sample turret using alligator clamps, placing the sample turret into a vacuum chamber with one side of the glass sample facing outward, adjusting the position so that the glass sample is centered on the graphite target, Hauzer850 apparatus and sample placement position as shown in FIG. 3, closing the chamber, starting the vacuum system, and setting the target vacuum level to 5 × 10^-5mbar, starting a heating system in the cavity, setting the target temperature to be 300 ℃, and starting sputtering coating. And in the film coating process, high-purity argon gas with the flow rate of 200sccm and high-purity acetylene gas with the flow rate of 20sccm are kept introduced, the rotating speed of a sample rotating stand is 3 revolutions per minute, the sample bias voltage is 50V, the sputtering power is 4kW, and the sputtering deposition time is 10 minutes.

Substep S23: re-loading the sample after sampling, and depositing a DLC resistive film on the other surface of the glass sample;

keeping the vacuum pump continuously running, naturally cooling the cavity, opening the cavity when the temperature is reduced to below 70 ℃ from 150-300 ℃, taking out the glass sample, turning over the sample, enabling the surface without the film to face outwards and the surface with the deposited DLC film to be blocked by the glass serving as a baffle, and clamping the sample on the sample rotating stand again. As with the sub-step S22 setup, a DLC resistive film was sputter deposited. And finally, depositing DLC resistive films on the upper surface, the lower surface and the peripheral side edges of the glass sample to finish the preparation of the DLC resistive glass.

In the embodiment of the disclosure, after the film coating is finished, the power supply system is turned off, the vacuum pump is kept running, the cavity is naturally cooled, when the temperature is reduced to below 70 ℃ from 300 ℃, the cavity is opened, the glass sample deposited with the DLC film is taken out, then the glass is turned over, the other surface without the film coating faces outwards, and the surface deposited with the DLC film is blocked by the glass serving as the baffle. And clamping the sample on the sample rotating stand again, and keeping the sample at the right center of the graphite target.

Substep S24: sampling and testing;

and (3) keeping the vacuum pump continuously running, naturally cooling the cavity, opening the cavity when the temperature is reduced to below 70 ℃ from 150-300 ℃, taking out the coated glass sample, and measuring the surface resistivity of the surface of the glass by using a resistance meter. In an embodiment of the disclosure, a schematic view of a coated glass sample is shown in fig. 4. The sheet resistivity of the DLC resistive film on glass was measured using a sheet resistance instrument and found to be about 100G Ω/□.

Step S3: preparing a resistance plate chamber structure based on DLC (diamond-like carbon) resistive glass;

the step S3 includes:

substep S31: preprocessing materials required by manufacturing a detector;

all materials were subjected to a clean-dry treatment: honeycomb plate, printed circuit board, gasket (thickness is 1 mm-2 mm), insulating film (thickness is 0.1 mm-0.2 mm), DLC resistive glass deposited with DLC film, sealing strip, gas path fittings, etc. In embodiments of the present disclosure, the desired materials include: 2 honeycomb panels, 2 printed wiring boards, 2 pieces of DLC resistive film plated perforated glass, 3 insulating spacers with a thickness of 1mm, 1 insulating film with a thickness of 0.15mm, 4 sealing strips made of epoxy resin, and the like.

Substep S32: preparing a lower glass electrode structure;

the sub-step S32 includes:

substep S321: sticking a honeycomb plate on the outer surface of the bottom printed circuit board;

substep S322: arranging an insulating film on the inner surface of the bottom printed circuit board and exposing the high-voltage electrode, and installing DLC (diamond-like carbon) resistive glass after arranging a carbon film on the surface of the high-voltage electrode to form a lower glass electrode structure;

a honeycomb board was adhered to the outer surface of the lower printed wiring board using a double-sided adhesive, and was compacted using a weight. The inner surface of the circuit board is provided with a reading electrode and a high voltage electrode, and an insulating film with the thickness of 0.1 mm-0.2 mm is arranged on the inner surface of the lower printed circuit board to expose the high voltage electrode. Then, a carbon film is cut and smoothly attached to the high-voltage electrode, and then DLC resistive glass (lower glass electrode) on which a DLC resistive film is deposited is mounted on the insulating film to ensure that the glass is tightly adhered to the carbon film.

In the disclosed embodiment, the thickness of the insulating film is 0.15 mm.

Substep S33: preparing a resistance plate chamber structure on the lower glass electrode structure;

the sub-step S33 includes:

substep S331: an annular gasket is arranged on the through hole on the lower glass electrode;

an annular insulating gasket with the thickness of 1 mm-2 mm is placed above the through hole on the lower glass electrode, the diameter of the central hole of the gasket is 2 mm-4 mm, and the outer diameter of the gasket is 6 mm-10 mm. And a proper amount of epoxy resin glue is dripped on the central hole of the gasket, and the glue drips to protrude out of the gasket, so that the annular insulating gasket and the glue drips cover the through hole on the DLC resistive glass while a stable air gap is formed.

In the disclosed embodiment, the thickness of the annular insulating gasket is 1mm, the diameter of the central hole of the gasket is 3mm, and the diameter of the outer part of the gasket is 8 mm.

Substep S332: installing the other piece of DLC resistive glass on the gasket, enabling the through hole of the DLC resistive glass to face the annular gasket, and adhering the two pieces of DLC resistive glass together by epoxy resin glue in the gasket to form a stable air gap;

and mounting the other DLC resistive glass (upper glass electrode) deposited with the DLC resistive film on a gasket, wherein the through hole on the upper glass electrode faces the gasket, and the two pieces of glass are adhered together by epoxy resin glue in the gasket to form a stable air gap of 1-2 mm.

In the disclosed embodiment, the air gap is 1mm thick.

Substep S333: mounting a top printed circuit board structure on the DLC resistive glass mounted in the substep S332 to complete the preparation of the resistive board chamber structure;

another honeycomb board was similarly stuck to the upper printed wiring board, and then an insulating film was mounted to expose the high-voltage electrode. And then cutting a carbon film, flatly pasting the carbon film on the high-voltage electrode to complete the structure of the top printed circuit board, and then mounting the structure of the top printed circuit board on the DLC resistive glass mounted in the substep S332.

Step S4: and packaging the resistance plate chamber structure to finish the preparation of the high counting rate resistance plate chamber detector.

And (3) plugging a sealing strip with the thickness of 1-2 mm, which is made of insulating materials, on the periphery between the two glass electrodes, installing a gas inlet and a gas outlet on the sealing strip at one end, installing a gas quick-plugging connector, and finally coating epoxy resin glue on the contact part of the sealing strip of the detector and the detector to seal the air gap of the whole detector. And pressing a flat weight on the detector for 12-24 hours, and welding a circuit connector of the detector after the epoxy resin adhesive is solidified to finish the manufacture of the detector.

In the disclosed embodiment, a 1mm thick sealing strip is used, as shown in fig. 5. And pressing a flat weight on the detector for 24h to finish the manufacture of the resistance plate chamber detector.

So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.

From the above description, those skilled in the art should have clear understanding of the method for manufacturing the high count rate resistive plate chamber detector of the present disclosure.

In summary, the present disclosure provides a method for manufacturing a high count rate resistance plate chamber detector, in which a DLC resistive film with a suitable surface resistivity is deposited on the surface of a glass with a small hole and in the hole by a magnetron sputtering method, and then the DLC resistive film is used for manufacturing the resistance plate chamber detector, so that the resistance plate chamber detector can maintain a sufficiently high gain and stably work, and simultaneously, the neutralization speed of charges generated during the operation of the detector is effectively increased, thereby effectively increasing the count rate capability of the detector, and having the following advantages:

compared with the prior method for neutralizing charge longitudinally through glass with high resistance, the method for depositing the DLC resistive film on the common float glass has the advantages that the charge can be rapidly neutralized in the DLC resistive film, and the counting rate capability of a detector is improved.

According to the method, the small holes are punched in the common float glass, the DLC resistive film is deposited in the holes, the paths needed by charge neutralization are reduced, the charge neutralization speed is increased, and the counting rate capability of the detector is further improved.

The method for depositing the DLC resistive film on the common float glass changes the electrical characteristics of the glass electrode of the resistance plate chamber, so that the charge neutralization process is performed on the surface of the DLC resistive film with relatively low resistance value. Compared with low-resistance glass, the surface resistivity of the DLC film can be adjusted by changing the process parameters in the magnetron sputtering deposition process, so that the high-counting-rate RPC detector provided by the disclosure can adapt to various requirements more flexibly.

Compared with low-resistance glass, the method for depositing the DLC resistive film on the common float glass has the advantages that the process of the common float glass is simple, the cost is low, subsequent polishing of the glass is avoided, and the manufacturing difficulty and the cost of the conventional high-counting-rate RPC detector are reduced.

The application range of the RPC detector in the high-energy physical experiment can be greatly improved, the higher performance requirement of the increasingly developed high-energy physical experiment on the detector can be met, and technical support is provided for the application of the RPC detector in different experimental environments.

It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.

And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.

Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.

Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.

The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.

In addition, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments.

Those skilled in the art will appreciate that the modules in the device in an embodiment may be adaptively changed and disposed in one or more devices different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. Also in the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware.

Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.

The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.