阅读说明：本技术 衬底的分离方法、半导体存储装置的制造方法及衬底分离装置 (Substrate separation method, semiconductor memory device manufacturing method, and substrate separation device ) 是由 曽田栄一 于 2019-08-12 设计创作，主要内容包括：实施方式涉及一种衬底的分离方法、半导体存储装置的制造方法及衬底分离装置。实施方式的衬底的分离方法分离具有第1衬底及第2衬底的贴合衬底,在第1衬底配置有第1衬底上的碳膜及碳膜上的存储单元,在第2衬底配置有晶体管,第1衬底与第2衬底是将配置有存储单元的侧的面与配置有晶体管的侧的面接合,该衬底的分离方法是去除碳膜,从贴合衬底分离存储单元及第2衬底。(Embodiments relate to a substrate separation method, a method of manufacturing a semiconductor memory device, and a substrate separation apparatus. A method for separating a substrate according to an embodiment includes separating a bonded substrate including a 1 st substrate and a 2 nd substrate, disposing a carbon film on the 1 st substrate and a memory cell on the carbon film on the 1 st substrate, disposing a transistor on the 2 nd substrate, and bonding a surface of the 1 st substrate and the 2 nd substrate on a side where the memory cell is disposed and a surface of the transistor on a side where the transistor is disposed, wherein the carbon film is removed, and the memory cell and the 2 nd substrate are separated from the bonded substrate.)

1. A method of separating a substrate, characterized by: separating the bonded substrate having the 1 st substrate and the 2 nd substrate,

the bonded substrate has a carbon film disposed on the 1 st surface of the 1 st substrate,

a memory cell is disposed on the carbon film,

a 1 st connection terminal is provided on the memory cell,

a transistor is provided on the 1 st surface of the 2 nd substrate,

a 2 nd connection terminal is provided on the transistor,

the 1 st substrate and the 2 nd substrate are

Bonding a surface of the 1 st substrate facing the 1 st surface of the 2 nd substrate on a surface on which the memory cell is disposed and a surface on which the transistor is disposed, wherein the 1 st connection terminal is connected to the 2 nd connection terminal, and

the separation method of the substrate is to remove the carbon film,

and separating the memory cell and the 2 nd substrate, to which the 1 st connection terminal and the 2 nd connection terminal are connected, from the bonded substrate.

2. The method for separating a substrate according to claim 1, wherein: the 2 nd substrate is a semiconductor substrate,

the transistor is

The surface layer of the No. 2 substrate is provided with an active area.

3. The method for separating a substrate according to claim 1, wherein: when the carbon film is removed,

the carbon film is removed by at least one of plasma ashing and wet treatment.

4. The method for separating a substrate according to claim 1, wherein: before removing the carbon film, the memory cell is covered by an insulating layer,

the memory cell of the insulating layer is surrounded by a scribe line, and a groove is disposed at a position corresponding to the scribe line, the groove extending in a depth direction of the insulating layer to reach the carbon film and communicating with an outer side of the insulating layer.

5. The method for separating a substrate according to claim 1, wherein: when the bonded substrate is separated, the adhesive layer is removed,

holding the 1 st substrate by a 1 st holder having any one of a 1 st vacuum chuck, a 1 st electrostatic chuck, and a gripper,

holding the 2 nd substrate in a 2 nd holder having a 2 nd vacuum chuck or a 2 nd electrostatic chuck,

separating the bonded substrate by pulling the 1 st holder away from the 2 nd holder.

6. The method for separating a substrate according to claim 5, wherein: when the bonded substrate is separated, the adhesive layer is removed,

and assisting separation of the bonded substrate by performing at least one of gas ejection, liquid ejection, vibration application, and sound wave application between the 1 st substrate and the memory cell.

7. The method for separating a substrate according to claim 6, wherein: and (b) when at least one of gas ejection, liquid ejection, vibration application, and sound wave application is performed between the 1 st substrate and the memory cell, pulsing at least one of the gas ejection, liquid ejection, vibration application, and sound wave application.

8. A method of manufacturing a semiconductor memory device, characterized in that:

forming a carbon film on the 1 st surface of the 1 st substrate,

forming a memory cell on the carbon film,

forming a contact connected to the memory cell and a 1 st connection terminal connected to the contact,

forming a transistor on the 1 st side of the 2 nd substrate,

forming a contact connected to the transistor and a 2 nd connection terminal connected to the contact,

bonding the 1 st substrate on which the memory cell is formed and the 2 nd substrate on which the transistor is formed in such a manner that the 1 st connection terminal and the 2 nd connection terminal face each other, connecting the 1 st connection terminal and the 2 nd connection terminal to each other,

removing the carbon film, and removing the carbon film,

separating the memory cell and the 2 nd substrate from the 1 st substrate and the 2 nd substrate on which the memory cell is formed.

9. The method for manufacturing a semiconductor memory device according to claim 8, wherein: the 2 nd substrate is a semiconductor substrate,

the transistor

The surface layer of the No. 2 substrate is provided with an active area.

10. The method for manufacturing a semiconductor memory device according to claim 8, wherein: when the carbon film is removed,

the carbon film is removed by at least one of plasma ashing and wet treatment.

11. The method for manufacturing a semiconductor memory device according to claim 8, wherein: before the carbon film is removed, the memory cell is covered with an insulating layer, the memory cell of the insulating layer is surrounded by a scribe line, and a groove is disposed at a position corresponding to the scribe line, the groove extending in a depth direction of the insulating layer to reach the carbon film and communicating with an outer side of the insulating layer.

12. The method for manufacturing a semiconductor memory device according to claim 8, wherein: when the bonded substrate is separated, the adhesive layer is removed,

holding the 1 st substrate by a 1 st holder having any one of a 1 st vacuum chuck, a 1 st electrostatic chuck, and a gripper,

holding the 2 nd substrate in a 2 nd holder having a 2 nd vacuum chuck or a 2 nd electrostatic chuck,

separating the bonded substrate by pulling the 1 st holder away from the 2 nd holder.

13. The method for manufacturing a semiconductor memory device according to claim 12, wherein: when the bonded substrate is separated, the adhesive layer is removed,

the bonded substrate is assisted in separation by performing at least one of gas ejection, liquid ejection, vibration application, and sound wave application on the bonded substrate.

14. The method for manufacturing a semiconductor memory device according to claim 13, wherein: and a step of pulsing at least one of gas ejection, liquid ejection, vibration application, and sound wave application to the bonded substrate.

15. A substrate separation apparatus is characterized by comprising:

a processing vessel;

a power supply configured to supply power into the processing chamber to generate plasma;

an ashing gas supply unit configured to supply an ashing gas into the processing chamber;

a 1 st holder disposed in the processing container and adsorbing a 1 st substrate having a storage unit disposed on a carbon film;

a 2 nd holder which is disposed in the processing container so as to face the 1 st holder and which adsorbs a 2 nd substrate on which a transistor is disposed; and

a control unit for controlling the power supply, the ashing gas supply unit, the 1 st holder, and the 2 nd holder;

the control part is

The 1 st substrate included in a bonded substrate in which a surface on which the memory cell is arranged and a surface on which the transistor is arranged are bonded is adsorbed to the 1 st holder,

supplying an ashing gas from the ashing gas supply unit into the processing container;

supplying power from the power supply into the processing container to generate plasma;

and separating the memory cell and the 2 nd substrate from the bonded substrate on which the memory cell is disposed by separating the 1 st substrate and the 2 nd substrate by separating the 1 st holder and the 2 nd holder from each other while electrostatically attracting the 1 st substrate to the 1 st holder and vacuum-attracting the 2 nd substrate to the 2 nd holder.

16. The substrate separation apparatus according to claim 15, wherein: the power supply supplies power to the 1 st holder and the 2 nd holder, and applies a plasma generation bias to the 1 st holder and the 2 nd holder,

generating plasma between the 1 st holder and the 2 nd holder by the plasma generating bias.

17. The substrate separation apparatus according to claim 15, wherein: the 1 st holder has an electrode disposed inside,

the 2 nd holder has a coil disposed inside,

the power supply comprises

An AC power supply for supplying electric power to the electrodes, and

and a high-frequency power supply for supplying power to the coil.

18. A substrate separation apparatus according to claim 15, further comprising an auxiliary mechanism for applying a physical force for assisting the separation of said 1 st substrate and said 2 nd substrate.

19. The substrate separation apparatus according to claim 18, wherein: the auxiliary mechanism is

And performing at least one of gas ejection, liquid ejection, vibration application, and sound wave application between the 1 st substrate and the memory cell.

20. The substrate separation apparatus according to claim 18, wherein: the auxiliary mechanism is

And pulsing at least one of gas ejection, liquid ejection, vibration application, and sound wave application between the 1 st substrate and the memory cell.

Technical Field

Embodiments of the present invention relate to a substrate separation method, a method of manufacturing a semiconductor memory device, and a substrate separation apparatus.

Background

There are the following cases: a memory cell is formed over a base substrate, a transistor is formed over a substrate such as a semiconductor substrate, and a surface where the memory cell is formed is bonded to a surface where the transistor is formed, whereby a semiconductor memory device including the memory cell and the transistor is manufactured. The unnecessary support substrate is removed by, for example, grinding.

Disclosure of Invention

One embodiment provides a method for separating a substrate, a method for manufacturing a semiconductor memory device, and a substrate separation apparatus, which can be reused without grinding and removing a supporting substrate.

Drawings

Fig. 1A and 1B are cross-sectional views schematically showing an example of the structure of the semiconductor memory device according to embodiment 1.

Fig. 2A to 2C are flowcharts showing an example of the procedure of the manufacturing process of the semiconductor memory device according to embodiment 1.

Fig. 3A and 3B are flowcharts showing an example of the procedure of the manufacturing process of the semiconductor memory device according to embodiment 1.

Fig. 4A and 4B are flowcharts showing an example of the procedure of the manufacturing process of the semiconductor memory device according to embodiment 1.

Fig. 5A and 5B are flowcharts showing an example of the procedure of the manufacturing process of the semiconductor memory device according to embodiment 1.

Fig. 6A and 6B are flowcharts showing an example of the procedure of the manufacturing process of the semiconductor memory device according to embodiment 1.

Fig. 7A and 7B are flowcharts showing an example of the procedure of the manufacturing process of the semiconductor memory device according to embodiment 1.

Fig. 8 is a flowchart showing an example of a procedure of a manufacturing process of the semiconductor memory device according to embodiment 1.

Fig. 9 is a flowchart showing an example of a procedure of a manufacturing process of the semiconductor memory device according to embodiment 1.

Fig. 10 is a flowchart showing an example of a procedure of a manufacturing process of the semiconductor memory device according to embodiment 1.

Fig. 11 is a flowchart showing an example of a procedure of a manufacturing process of the semiconductor memory device according to embodiment 1.

Fig. 12 is a flowchart showing an example of a procedure of a manufacturing process of the semiconductor memory device according to variation 1 of embodiment 1.

Fig. 13 is a flowchart showing an example of a procedure of a manufacturing process of the semiconductor memory device according to variation 1 of embodiment 1.

Fig. 14 is a flowchart showing an example of a procedure of a manufacturing process of the semiconductor memory device according to variation 1 of embodiment 1.

Fig. 15 is a flowchart showing an example of a procedure of a manufacturing process of the semiconductor memory device according to variation 1 of embodiment 1.

Fig. 16 is a flowchart showing an example of a procedure of a manufacturing process of the semiconductor memory device according to variation 2 of embodiment 1.

Fig. 17 is a flowchart showing an example of a procedure of a manufacturing process of the semiconductor memory device according to variation 2 of embodiment 1.

Fig. 18 is a flowchart showing an example of a procedure of a manufacturing process of a semiconductor memory device according to variation 3 of embodiment 1.

Fig. 19 is a flowchart showing an example of a procedure of a manufacturing process of a semiconductor memory device according to variation 3 of embodiment 1.

Fig. 20 is a sectional view showing an example of the structure of the substrate separation apparatus according to embodiment 2.

Fig. 21 is a cross-sectional view showing an example of the configuration of the substrate separation apparatus according to variation 1 of embodiment 2.

Fig. 22 is a cross-sectional view showing an example of the structure of a substrate separation apparatus according to variation 2 of embodiment 2.

Fig. 23 is a cross-sectional view showing an example of the structure of a substrate separation apparatus according to variation 3 of embodiment 2.

A method for separating a substrate according to an embodiment separates a bonded substrate having a 1 st substrate and a 2 nd substrate, the bonded substrate having a carbon film disposed on a 1 st surface of the 1 st substrate, a memory cell disposed on the carbon film, and a 1 st connection terminal disposed on the memory cell. Further, a transistor is disposed on the 1 st surface of the 2 nd substrate, and a 2 nd connection terminal is disposed on the transistor. The 1 st substrate and the 2 nd substrate are formed by bonding a surface on which the memory cell is arranged and a surface on which the transistor is arranged in a direction in which the 1 st surfaces of the 1 st substrate and the 2 nd substrate face each other, and the 1 st connection terminal and the 2 nd connection terminal are connected. The substrate separation method is to remove the carbon film and separate the memory cell and the 2 nd substrate, in which the 1 st connection terminal and the 2 nd connection terminal are connected, from the bonded substrate.