阅读说明：本技术 全反射微波器件及其制备方法 (Total reflection microwave device and preparation method thereof ) 是由 苏晓东 邹帅 于 2020-07-20 设计创作，主要内容包括：本发明公开了一种全反射微波器件及其制备方法,所述全反射微波器件包括介质层及位于介质层全部或部分表面的若干亚波长结构层,所述亚波长结构层包括若干呈阵列周期状分布的微结构,亚波长结构层用于对介质层内的微波进行全反射限制和/或对介质层外的微波进行吸收。本发明的微波器件无需在微波器件表面镀覆金属层,即可实现器件内微波的全反射及器件外微波的全吸收,大幅降低了器件的制造成本；易于设计、加工和制造,可大规模产业化,适用于具有机械振动、宽温工作等环境中微波器件的研制和生产,在现代电子通信系统中具有重要运用价值。(The invention discloses a total reflection microwave device and a preparation method thereof, wherein the total reflection microwave device comprises a dielectric layer and a plurality of sub-wavelength structure layers positioned on the whole or part of the surface of the dielectric layer, each sub-wavelength structure layer comprises a plurality of microstructures distributed in an array periodic shape, and each sub-wavelength structure layer is used for carrying out total reflection limitation on microwaves in the dielectric layer and/or absorbing the microwaves outside the dielectric layer. The microwave device can realize the total reflection of microwaves in the device and the total absorption of microwaves outside the device without plating a metal layer on the surface of the microwave device, thereby greatly reducing the manufacturing cost of the device; the microwave device is easy to design, process and manufacture, can be industrialized in large scale, is suitable for the development and production of microwave devices in the environments with mechanical vibration, wide-temperature work and the like, and has important application value in modern electronic communication systems.)

1. The total reflection microwave device is characterized by comprising a dielectric layer and a plurality of sub-wavelength structure layers positioned on the whole or part of the surface of the dielectric layer, wherein the sub-wavelength structure layers comprise a plurality of microstructures distributed in an array periodic shape, and the sub-wavelength structure layers are used for carrying out total reflection limitation on microwaves in the dielectric layer and/or absorbing the microwaves outside the dielectric layer.

2. The total reflection microwave device according to claim 1, wherein the dielectric layer is a ceramic dielectric layer, and the sub-wavelength structure layer is a ceramic sub-wavelength structure layer.

3. The total reflection microwave device according to claim 1 or 2, wherein the dielectric constant of the dielectric layer and the sub-wavelength structure layer is 5 to 100.

4. The total reflection microwave device according to claim 1 or 2, wherein the dielectric constant of the dielectric layer and the sub-wavelength structure layer is 20 to 80.

5. The total reflection microwave device according to claim 1, wherein the size of the micro structure ranges from 0.1mm to 50 mm.

6. The total reflection microwave device according to claim 1, wherein the microstructure is a pyramid-shaped microstructure, and the pyramid-shaped microstructure is vertically distributed on the surface of the dielectric layer; or the microstructures are cylindrical microstructures, and the cylindrical microstructures are distributed on the surface of the dielectric layer in parallel.

7. The total reflection microwave device according to claim 1, wherein a ratio of a period length of the microstructure to a wavelength of the microwave is 0.01 to 1.

8. The total reflection microwave device according to claim 1, wherein the frequency range of the microwave is 1GH to 500 GHz.

9. A preparation method of a total reflection microwave device is characterized by comprising the following steps:

the total reflection microwave device according to any one of claims 1 to 8 is prepared by a die forming process.

10. A preparation method of a total reflection microwave device is characterized by comprising the following steps:

and (3) machining the surface of the dielectric layer to form a sub-wavelength structural layer to obtain the total reflection microwave device as claimed in any one of claims 1 to 8.

Technical Field

The invention belongs to the technical field of communication devices, and particularly relates to a total reflection microwave device and a preparation method thereof.

Background

The communications field involves various microwave devices such as filters, isolators, etc. and as shown in fig. 1, the surface of the microwave device is typically covered with a metal layer 20 'having zero tangential electric field, so that the electromagnetic wave is confined within the medium 10' (typically air) to form a standing wave oscillation having a geometry of about half the wavelength of the waveguide.

As the communication band enters higher frequencies, such as 5G or even 6G, the size of the microwave device will be further reduced, and the dielectric is changed from air to a ceramic material with higher relative dielectric constant, so that the difficulty of processing and metalizing the device is greatly increased.

Therefore, in view of the above technical problems, it is necessary to provide a total reflection microwave device and a method for manufacturing the same.

Disclosure of Invention

Aiming at the defects of the prior art, the invention aims to provide a total reflection microwave device and a preparation method thereof.

In order to achieve the above object, an embodiment of the present invention provides the following technical solutions:

the total reflection microwave device comprises a dielectric layer and a plurality of sub-wavelength structure layers positioned on the whole or part of the surface of the dielectric layer, wherein the sub-wavelength structure layers comprise a plurality of microstructures which are distributed in an array periodic shape, and the sub-wavelength structure layers are used for carrying out total reflection limitation on microwaves in the dielectric layer and/or absorbing the microwaves outside the dielectric layer.

In one embodiment, the dielectric layer is a ceramic dielectric layer, and the sub-wavelength structure layer is a ceramic sub-wavelength structure layer.

In one embodiment, the dielectric constant of the dielectric layer and the sub-wavelength structure layer is 5 to 100.

In one embodiment, the dielectric constant of the dielectric layer and the dielectric constant of the sub-wavelength structure layer are 20-80.

In one embodiment, the microstructures have a size ranging from 0.1mm to 50 mm.

In one embodiment, the microstructure is a pyramid-shaped microstructure, and the pyramid-shaped microstructure is vertically distributed on the surface of the dielectric layer; or the microstructures are cylindrical microstructures, and the cylindrical microstructures are distributed on the surface of the dielectric layer in parallel.

In one embodiment, the ratio of the period length of the microstructure to the wavelength of the microwave is 0.01 to 1.

In one embodiment, the frequency range of the microwave is 1 GH-500 GHz.

The technical scheme provided by another embodiment of the invention is as follows:

a preparation method of a total reflection microwave device comprises the following steps:

the total reflection microwave device is prepared by a die forming process.

The technical scheme provided by the further embodiment of the invention is as follows:

a preparation method of a total reflection microwave device comprises the following steps:

and machining the surface of the dielectric layer to form a sub-wavelength structural layer to obtain the total reflection microwave device.

The invention has the beneficial effects that:

the microwave device can realize the total reflection of microwaves in the device and the total absorption of microwaves outside the device without plating a metal layer on the surface of the microwave device, thereby greatly reducing the manufacturing cost of the device;

the microwave device is easy to design, process and manufacture, can be industrialized in large scale, is suitable for the development and production of microwave devices in the environments with mechanical vibration, wide-temperature work and the like, and has important application value in modern electronic communication systems.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

FIG. 1 is a schematic diagram of a microwave device in the prior art;

FIG. 2 is a schematic structural diagram of a microwave device in example 1 of the present invention;

FIG. 3 is a simulation diagram of a microwave device transmitting 30GHz microwaves in example 1 of the present invention;

FIG. 4 is a schematic structural view of a microwave device in example 2 of the present invention;

fig. 5 is a simulation diagram of a microwave device transmitting 5GHz microwaves in embodiment 2 of the present invention.

Detailed Description

In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the drawings in the embodiment of the present invention, and it is obvious that the described embodiment is only a part of the embodiment of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The invention discloses a total reflection microwave device, which comprises a dielectric layer and a plurality of sub-wavelength structure layers positioned on the whole or part of the surface of the dielectric layer, wherein each sub-wavelength structure layer comprises a plurality of microstructures distributed in an array periodic shape, and the sub-wavelength structure layers are used for carrying out total reflection limitation on microwaves in the dielectric layer and/or absorbing the microwaves outside the dielectric layer.

The present invention is further illustrated by the following specific examples.