阅读说明：本技术 半导体装置 (Semiconductor device with a plurality of semiconductor chips ) 是由 山崎舜平 生内俊光 肥塚纯一 冈崎健一 于 2020-02-19 设计创作，主要内容包括：提供一种电特性良好的半导体装置。提供一种可靠性高的半导体装置。提供一种电特性稳定的半导体装置。该半导体装置包括半导体层、第一绝缘层、第二绝缘层以及导电层。半导体层、第二绝缘层及导电层依次层叠在第一绝缘层上。半导体层包含铟及氧,在表示铟、元素M、锌的各原子数比的三角图中具有以直线分别依次连接第一坐标(1：0：0)、第二坐标(2：1：0)、第三坐标(14：7：1)、第四坐标(7：2：2)、第五坐标(14：4：21)、第六坐标(2：0：3)、第一坐标的范围内的组成。另外,元素M为镓、铝、钇和锡中的任一个以上。(A semiconductor device having excellent electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, and a conductive layer. The semiconductor layer, the second insulating layer, and the conductive layer are sequentially stacked on the first insulating layer. The semiconductor layer contains indium and oxygen, and has a composition in a range in which a first coordinate (1: 0: 0), a second coordinate (2: 1: 0), a third coordinate (14: 7: 1), a fourth coordinate (7: 2: 2), a fifth coordinate (14: 4: 21), a sixth coordinate (2: 0: 3), and the first coordinate are connected in this order by straight lines in a triangular diagram showing the atomic ratios of indium, an element M, and zinc. The element M is any one or more of gallium, aluminum, yttrium, and tin.)