阅读说明：本技术 光伏器件中吸收层的v族掺杂方法 (V-group doping method of absorption layer in photovoltaic device ) 是由 S·格罗弗 陆定原 R·马利克 熊刚 于 2019-01-14 设计创作，主要内容包括：根据本文提供的实施方案,用于掺杂吸收层的方法可包括使吸收层与退火化合物接触。退火化合物可包含氯化镉和包含阴离子和阳离子的V族盐。阴离子、阳离子或二者可包含V族元素。方法可包括使吸收层退火,由此用退火化合物的V族元素的至少一部分掺杂吸收层。(According to embodiments provided herein, a method for doping an absorber layer may include contacting the absorber layer with an annealing compound. The annealing compound may comprise cadmium chloride and a group V salt comprising an anion and a cation. The anion, cation, or both may comprise a group V element. The method may include annealing the absorber layer, thereby doping the absorber layer with at least a portion of the group V element of the annealed compound.)