阅读说明：本技术 发射辐射的半导体器件 (Radiation-emitting semiconductor component ) 是由 彼得鲁斯·松德格伦 于 2018-11-12 设计创作，主要内容包括：提供了一种发射辐射的半导体器件(1),所述半导体器件具有半导体层序列(2)和载体(3),在所述载体上设置有半导体层序列,其中,半导体层序列具有设置用于产生辐射的有源区(20)、n型传导的镜区域(21)和p型传导的镜区域(22),所述有源区设置在n型传导的镜区域和p型传导的镜区域之间,并且p型传导的镜区域设置为比有源区更靠近载体。(A radiation-emitting semiconductor component (1) is provided, comprising a semiconductor layer sequence (2) and a carrier (3) on which the semiconductor layer sequence is arranged, wherein the semiconductor layer sequence comprises an active region (20) arranged for generating radiation, an n-conducting mirror region (21) and a p-conducting mirror region (22), wherein the active region is arranged between the n-conducting mirror region and the p-conducting mirror region, and wherein the p-conducting mirror region is arranged closer to the carrier than the active region.)