阅读说明：本技术 5G民用射频GaN基HEMT器件、MOS-HEMT器件及制备方法 (5G civil radio frequency GaN-based HEMT device, MOS-HEMT device and preparation method ) 是由 马晓华 宓珉瀚 周雨威 张濛 王鹏飞 于 2020-06-01 设计创作，主要内容包括：本发明涉及一种5G民用射频GaN基HEMT器件、MOS-HEMT器件及制备方法,GaN基HEMT器件制备方法包括：在Si衬底上依次生长碳掺杂GaN缓冲层、非故意掺杂GaN缓冲层、AlN插入层和InAlN势垒层,碳掺杂GaN缓冲层和非故意掺杂GaN缓冲层组成GaN缓冲层；在InAlN势垒层上制备源电极和漏电极；在InAlN势垒层、AlN插入层和非故意掺杂GaN缓冲层中制备GaN基HEMT器件的电学隔离；在InAlN势垒层上制备钝化层；在钝化层中制备栅脚凹槽,使栅脚凹槽贯穿钝化层；在栅脚凹槽中和钝化层上制备栅电极。该制备方法属于传统制备工艺,生产效率高,避免高成本复杂工艺如再生长技术的引入,从优化异质结材料的角度以较低成本实现高性能低电压器件,有利于GaN基HEMT器件在5G低成本民用市场中的推广。(The invention relates to a 5G civil radio frequency GaN-based HEMT device, an MOS-HEMT device and a preparation method thereof, wherein the preparation method of the GaN-based HEMT device comprises the following steps: growing a carbon-doped GaN buffer layer, an unintended doped GaN buffer layer, an AlN insert layer and an InAlN barrier layer on a Si substrate in sequence, wherein the carbon-doped GaN buffer layer and the unintended doped GaN buffer layer form the GaN buffer layer; preparing a source electrode and a drain electrode on the InAlN barrier layer; preparing electrical isolation of the GaN-based HEMT device in the InAlN barrier layer, the AlN insert layer and the unintentionally doped GaN buffer layer; preparing a passivation layer on the InAlN barrier layer; preparing a gate pin groove in the passivation layer, and enabling the gate pin groove to penetrate through the passivation layer; and preparing a gate electrode in the gate pin groove and on the passivation layer. The preparation method belongs to the traditional preparation process, has high production efficiency, avoids the introduction of high-cost complex processes such as a regrowth technology, realizes a high-performance low-voltage device with lower cost from the perspective of optimizing heterojunction materials, and is beneficial to the popularization of GaN-based HEMT devices in a 5G low-cost civil market.)

1. A preparation method of a 5G civil radio frequency GaN-based HEMT device is characterized in that the working voltage range of the 5G civil radio frequency GaN-based HEMT device is 1-6V, and the preparation method comprises the following steps:

s1, growing a carbon-doped GaN buffer layer, an unintended doped GaN buffer layer, an AlN insert layer and an InAlN barrier layer on the substrate in sequence, wherein the carbon-doped GaN buffer layer and the unintended doped GaN buffer layer form the GaN buffer layer;

s2, preparing a source electrode and a drain electrode on the InAlN barrier layer;

s3, preparing electrical isolation of the GaN-based HEMT device in the InAlN barrier layer, the AlN insert layer and the unintentionally doped GaN buffer layer;

s4, preparing a passivation layer on the InAlN barrier layer;

s5, preparing a gate pin groove in the passivation layer, and enabling the gate pin groove to penetrate through the passivation layer;

and S6, preparing a gate electrode in the gate pin groove and on the passivation layer.

2. The method for manufacturing a 5G civil radio frequency GaN-based HEMT device according to claim 1, wherein said substrate comprises Si.

3. The method for manufacturing a 5G civil radio frequency GaN-based HEMT device as claimed in claim 1, wherein the doping concentration of the carbon-doped GaN buffer layer is 1 × 10¹⁸～1×10¹⁹cm^-3。

4. The method for preparing a 5G civil radio frequency GaN-based HEMT device as claimed In claim 1, wherein the InAlN barrier layer is made of In_0.17Al_0.83And N, the thickness of the InAlN barrier layer is 8-13 nm.

5. The method for manufacturing a 5G civil radio frequency GaN-based HEMT device as claimed in claim 1, wherein the InAlN barrier layer and the GaN buffer layer form an InAlN/GaN heterojunction, and the sheet resistance of the InAlN/GaN heterojunction is 180-250 Ω/sq.

6. A5G civil radio frequency GaN-based HEMT device is characterized in that the working voltage range of the 5G civil radio frequency GaN-based HEMT device is 1-6V, and the device is prepared by the preparation method according to any one of claims 1-5.

7. A preparation method of a 5G civil radio frequency GaN-based MOS-HEMT device is characterized in that the working voltage range of the 5G civil radio frequency GaN-based MOS-HEMT device is 6-20V, and the preparation method comprises the following steps:

s1, growing a carbon-doped GaN buffer layer, an unintended doped GaN buffer layer, an AlN insert layer and an InAlN barrier layer on the substrate in sequence, wherein the carbon-doped GaN buffer layer and the unintended doped GaN buffer layer form the GaN buffer layer;

s2, preparing a source electrode and a drain electrode on the InAlN barrier layer;

s3, preparing electrical isolation of the GaN-based MOS-HEMT device in the InAlN barrier layer, the AlN insert layer and the unintentionally doped GaN buffer layer;

s4, preparing a passivation layer on the InAlN barrier layer;

s5, preparing a gate pin groove in the passivation layer, and enabling the gate pin groove to penetrate through the passivation layer;

s6, carrying out N on the InAlN barrier layer in the groove of the gate pin₂Performing O plasma oxidation treatment to form a dielectric layer;

and S7, preparing a gate electrode in the gate pin groove, on the dielectric layer and on the passivation layer.

8. The method for manufacturing a 5G civil radio frequency GaN-based MOS-HEMT device according to claim 7, wherein the N is₂The process conditions of the O plasma oxidation treatment are as follows: RF power of 300W, RF frequency of 13.56MHz, DC bias of 60V, N₂O flow rate of 100sccm, N₂The flow rate was 100sccm, the chamber pressure was 600mTorr, the temperature was 250 deg.C, and the processing time was 20 min.

9. The method for manufacturing a 5G civil radio frequency GaN-based MOS-HEMT device as claimed in claim 7, wherein the thickness of the dielectric layer is 1-5 nm.

10. A5G civil radio frequency GaN-based MOS-HEMT device is characterized in that the working voltage range of the 5G civil radio frequency GaN-based MOS-HEMT device is 6-20V, and the device is prepared by the preparation method according to any one of claims 7-9.

Technical Field

The invention belongs to the technical field of semiconductor devices, and particularly relates to a 5G civil radio frequency GaN-based HEMT device, an MOS-HEMT device and a preparation method thereof.

Background

The core components of a radio frequency power amplifier in a transceiver system, whose technology is mature, typically include GaAs-based HBT, pHEMT or Si-based LDMOS devices. With the improvement of nitride material growth technology and device process level, in the 4G era, GaN-based HEMT devices are very colorful in macro base station application by virtue of the characteristics of high working frequency, high output power density, high efficiency and the like, and the working voltage of the GaN-based HEMT devices is usually higher. With the advent of the 5G era, the task of information transfer and transmission is no longer completely undertaken by the macro base station, and the situation that the macro base station and the micro base station with lower working voltage work together appears. In addition, the low voltage applications in the 5G era also include high data transmission rate, low-latency 5G terminals, 5G WIFI, and the like. Although the specific working voltages used above are high or low, they are all 5G low voltage applications compared to macro base station applications with high working voltages.

In 2013, TriQuint Semiconductor reports an HEMT device based on an InAlN/GaN heterojunction, and the output power density (Pout) can reach 1.5-2.3W/mm and the Power Added Efficiency (PAE) can reach 62% -69% @10GHz under 6V working voltage; under the working voltage of 9V, Pout reaches 3-4.1W/mm, and PAE reaches 54% -66% @10 GHz; under the 8V working voltage, Pout reaches 2.6W/mm, and PAE reaches 39.6% @30 GHz. In 2015, Intel reports a GaN-technology-based HEMT device, the Pout can reach 0.55W/mm and the PAE can reach 80% @2GHz under the working voltage of 3.5V, which is the first international expansion of the application of GaN devices to the field of low-voltage mobile terminals; it is also noted that GaN devices are easier to compromise between large Pout and high PAE than GaAs-based and Si-based RF devices under the same operating conditions.

The above reports indicate that the GaN-based HEMT device has good radio frequency power characteristics at low voltage and has advantages in power density and efficiency compared to GaAs-based and Si-based devices. However, the 5G low-voltage application is mainly for civil use, and the cost should be reduced as much as possible on the premise of ensuring that the performance meets the requirements. In the preparation of the GaN device mentioned in the above report, the source-drain regrowth technology which is incompatible with the traditional technology, has high technology difficulty, low production efficiency and high manufacturing cost is adopted to reduce the parasitic resistance and improve the performance, which is not beneficial to the popularization of the GaN device in the 5G low-cost civil market; furthermore, the off-state leakage of the device is large, which results in low breakdown voltage, 20V and 8V respectively, which makes the device only suitable for some applications below certain specific voltage (10V and 4V) and cannot be used for more low voltage applications in consideration of the relationship between the maximum safe operating voltage and the breakdown voltage.

Disclosure of Invention

In order to solve the problems in the prior art, the invention provides a 5G civil radio frequency GaN-based HEMT device, an MOS-HEMT device and a preparation method. The technical problem to be solved by the invention is realized by the following technical scheme:

the embodiment of the invention provides a preparation method of a 5G civil radio frequency GaN-based HEMT device, wherein the working voltage range of the 5G civil radio frequency GaN-based HEMT device is 1-6V, and the preparation method comprises the following steps:

s1, growing a carbon-doped GaN buffer layer, an unintended doped GaN buffer layer, an AlN insert layer and an InAlN barrier layer on the substrate in sequence, wherein the carbon-doped GaN buffer layer and the unintended doped GaN buffer layer form the GaN buffer layer;

s2, preparing a source electrode and a drain electrode on the InAlN barrier layer;

s3, preparing electrical isolation of the GaN-based HEMT device in the InAlN barrier layer, the AlN insert layer and the unintentionally doped GaN buffer layer;

s4, preparing a passivation layer on the InAlN barrier layer;

s5, preparing a gate pin groove in the passivation layer, and enabling the gate pin groove to penetrate through the passivation layer;

and S6, preparing a gate electrode in the gate pin groove and on the passivation layer.

In one embodiment of the invention, the material of the substrate comprises Si.

In one embodiment of the present invention, the doping concentration of the carbon-doped GaN buffer layer is 1 × 10¹⁸～1×10¹⁹cm^-3。

In one embodiment of the invention, the material of the InAlN barrier layer comprises In_0.17Al_0.83And N, the thickness of the InAlN barrier layer is 8-13 nm.

In one embodiment of the invention, the InAlN barrier layer and the GaN buffer layer form an InAlN/GaN heterojunction, and the square resistance of the InAlN/GaN heterojunction is 180-250 omega/sq.

Another embodiment of the invention provides a 5G civil radio frequency GaN-based HEMT device, wherein the working voltage range of the 5G civil radio frequency GaN-based HEMT device is 1-6V, and the device is prepared by the preparation method of the embodiment.

The invention further provides a preparation method of the 5G civil radio frequency GaN-based MOS-HEMT device, wherein the working voltage range of the 5G civil radio frequency GaN-based MOS-HEMT device is 6-20V, and the preparation method comprises the following steps:

s1, growing a carbon-doped GaN buffer layer, an unintended doped GaN buffer layer, an AlN insert layer and an InAlN barrier layer on the substrate in sequence, wherein the carbon-doped GaN buffer layer and the unintended doped GaN buffer layer form the GaN buffer layer;

s2, preparing a source electrode and a drain electrode on the InAlN barrier layer;

s3, preparing electrical isolation of the GaN-based MOS-HEMT device in the InAlN barrier layer, the AlN insert layer and the unintentionally doped GaN buffer layer;

s4, preparing a passivation layer on the InAlN barrier layer;

s5, preparing a gate pin groove in the passivation layer, and enabling the gate pin groove to penetrate through the passivation layer;

s6, carrying out N on the InAlN barrier layer in the groove of the gate pin₂Performing O plasma oxidation treatment to form a dielectric layer;

and S7, preparing a gate electrode in the gate pin groove, on the dielectric layer and the passivation layer.

In one embodiment of the present invention, said N₂The process conditions of the O plasma oxidation treatment are as follows: RF power of 300W, RF frequency of 13.56MHz, DC bias of 60V, N₂O flow rate of 100sccm, N₂The flow rate was 100sccm, the chamber pressure was 600mTorr, the temperature was 250 deg.C, and the processing time was 20 min.

In an embodiment of the invention, the thickness of the dielectric layer is 1-5 nm.

The invention further provides a 5G civil radio frequency GaN-based MOS-HEMT device, wherein the working voltage range of the 5G civil radio frequency GaN-based MOS-HEMT device is 6-20V, and the device is prepared by the preparation method in the embodiment.

Compared with the prior art, the invention has the beneficial effects that:

1. the preparation method of the GaN-based HEMT device with the working voltage range of 1-6V belongs to the traditional preparation process, has high production efficiency, avoids the introduction of high-cost complex processes such as a regrowth technology, realizes the high-performance low-voltage device with lower cost from the viewpoint of optimizing heterojunction materials, and is beneficial to the popularization of the GaN-based HEMT device in a 5G low-cost civil market.

2. The preparation method adopts the InAlN/GaN heterojunction with low square resistance, reduces the parasitic resistance to increase the output current density and the power density, and reduces the Joule heat dissipation to improve the efficiency; in addition, the carbon-doped GaN buffer layer is adopted, so that the background carrier concentration of the buffer layer is reduced to reduce the electric leakage of the buffer layer and the off-state electric leakage, and further, the static power consumption is reduced to improve the efficiency; by adopting the InAlN/GaN heterojunction with low sheet resistance and the C-doped GaN buffer layer, the high performance of the device is realized at low cost from the viewpoint of heterojunction material optimization.

3. The preparation method of the GaN-based MOS-HEMT device with the working voltage range of 6-20V is compatible with the traditional preparation process, has high production efficiency, avoids the introduction of high-cost complex processes such as a regrowth technology, simultaneously combines the optimization of heterojunction materials, realizes a high-performance low-voltage device with lower cost, and is beneficial to the popularization of the GaN-based MOS-HEMT device in a 5G low-cost civil market.

4. The invention combines the GaN-based HEMT and the MOS-HEMT by preparing the GaN-based HEMT and the MOS-HEMT, and is applied to various 5G low-voltage scenes, thereby realizing 5G low-voltage application full coverage.

Drawings

Fig. 1 is a schematic flow chart of a method for manufacturing a 5G civil radio frequency GaN-based HEMT device according to an embodiment of the present invention;

fig. 2a to fig. 2f are schematic process diagrams of a method for manufacturing a 5G civil radio frequency GaN-based HEMT device according to an embodiment of the present invention;

fig. 3 is a schematic flow chart of a method for manufacturing a 5G civil radio frequency GaN-based MOS-HEMT device according to an embodiment of the present invention;

fig. 4a to fig. 4G are schematic process diagrams of a method for manufacturing a 5G civil radio frequency GaN-based MOS-HEMT device according to an embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.