Display device and method of manufacturing the same

文档序号:1254253 发布日期:2020-08-21 浏览:20次 中文

阅读说明:本技术 显示装置和制造该显示装置的方法 (Display device and method of manufacturing the same ) 是由 金正起 金暲镒 安在宪 尹汝建 洪锡埈 于 2020-02-04 设计创作,主要内容包括:提供一种显示装置,所述显示装置包括包含多个像素的显示面板以及包含窗层、滤光器层、滤色器层和边框层的盖面板。窗层包括透射区域和与透射区域相邻的边框区域。滤光器层设置在窗层的后表面的透射区域中。滤色器层设置在滤光器层上并包括量子点。边框层设置在所述后表面的边框区域中。滤光器层包括其中限定有开口的分隔壁层、设置在分隔壁层上的阻光层以及设置在开口中的反射层。边框层具有与阻光层的颜色相同的颜色。(A display device is provided that includes a display panel including a plurality of pixels and a cover panel including a window layer, a filter layer, a color filter layer, and a bezel layer. The window layer includes a transmissive region and a bezel region adjacent to the transmissive region. The filter layer is disposed in the transmissive region of the rear surface of the window layer. The color filter layer is disposed on the filter layer and includes quantum dots. The bezel layer is disposed in a bezel region of the rear surface. The filter layer includes a partition wall layer having an opening defined therein, a light blocking layer disposed on the partition wall layer, and a reflective layer disposed in the opening. The frame layer has the same color as that of the light blocking layer.)

1. A display device, the display device comprising:

a display panel including a base layer and a plurality of pixels, wherein the base layer includes an active area and a peripheral area adjacent to the active area, and the plurality of pixels are disposed on the base layer to generate light and overlap the active area; and

a cover panel including a window layer, a filter layer, a color filter layer, and a bezel layer, wherein the window layer includes a transmission region overlapping the active region and a bezel region adjacent to the transmission region, and includes a rear surface facing the display panel and a front surface opposite to the rear surface, the filter layer is disposed in the transmission region of the rear surface, the color filter layer is disposed on the filter layer and includes quantum dots, and the bezel layer is disposed in the bezel region of the rear surface,

wherein the filter layer includes a partition wall layer having an opening defined therein, a light blocking layer provided on the partition wall layer, and a reflective layer provided in the opening, and

the frame layer has the same color as that of the light-blocking layer.

2. The display device according to claim 1, wherein the bezel layer comprises a material identical to a material of the light blocking layer.

3. The display device according to claim 1, wherein the bezel layer has a thickness identical to that of the light blocking layer.

4. The display device according to claim 1,

the opening is provided in a plurality of numbers,

the reflective layer includes first, second, and third reflective patterns having colors different from each other, and

the first, second, and third reflective patterns are respectively disposed in corresponding ones of the openings.

5. The display device according to claim 4, wherein one of the first, second, and third reflection patterns comprises a material identical to that of the partition wall layer.

6. The display device according to claim 4, wherein at least one of the first, second, and third reflection patterns covers a portion of the partition wall layer and a portion of the light blocking layer.

7. The display device according to claim 4,

the color filter layer includes first, second and third color patterns respectively overlapping the first, second and third reflective patterns, and

one color pattern of the first, second, and third color patterns transmits the light provided from the plurality of pixels.

8. The display device according to claim 1, wherein the light provided from the plurality of pixels is blue light.

9. The display device according to claim 1,

the frame layer includes a bottom portion facing the rear surface, an upper portion opposite to the bottom portion, and side portions connecting the bottom portion and the upper portion to each other, and

the side portion is inclined at an oblique angle with respect to the bottom portion.

10. The display device according to claim 1, wherein the bezel layer has a closed loop shape surrounding the transmissive area.

Technical Field

The disclosure relates to a display device and a method of manufacturing the same, and in particular, to a display device having improved reliability and a method of manufacturing the same.

Background

The display device is typically activated by applying an electrical signal to the display device. The display device may include a display panel for displaying an image. An organic light emitting display panel (one type of display panel) has desirable properties such as low power consumption, high luminance, and high response speed.

The organic light emitting display panel may be manufactured by forming red, green, and blue organic light emitting layers configured to emit respective lights in red, green, and blue pixel regions, respectively. Alternatively, the organic light emitting display panel may be manufactured by forming an organic light emitting layer configured to emit white light and then forming red, green, and blue color filters in red, green, and blue pixel regions.

The display device may include an effective area in which an image is displayed and a bezel area adjacent to the effective area.

Disclosure of Invention

Embodiments of the invention provide a display device configured to suppress light leakage at a bezel region and a method of manufacturing the same.

According to an embodiment of the invention, a display device may include a display panel and a cover panel. In such embodiments, the display panel includes a base layer including an active area and a peripheral area adjacent to the active area, and a plurality of pixels disposed on the base layer to generate light and overlap the active area. In such an embodiment, the cover panel includes a window layer including a transmission region overlapping the active region and a bezel region adjacent to the transmission region, and including a rear surface facing the display panel and a front surface opposite to the rear surface, a filter layer disposed in the transmission region of the rear surface, a color filter layer disposed on the filter layer and including quantum dots, and a bezel layer disposed in the bezel region of the rear surface. In such embodiments, the filter layer includes a partition wall layer having an opening defined therein, a light blocking layer disposed on the partition wall layer, and a reflective layer disposed in the opening. In such an embodiment, the bezel layer has the same color as the color of the light blocking layer.

In an embodiment, the bezel layer may include the same material as that of the light blocking layer.

In an embodiment, the bezel layer may have the same thickness as that of the light blocking layer.

In an embodiment, the opening may be provided in plurality. In such an embodiment, the reflective layer may include first to third reflective patterns having colors different from each other, and the first to third reflective patterns may be respectively disposed in corresponding ones of the openings.

In an embodiment, one of the first to third reflection patterns may include the same material as that of the partition wall layer.

In an embodiment, at least one of the first to third reflection patterns may cover a portion of the partition wall layer and a portion of the light blocking layer.

In an embodiment, the color filter layer may include first to third color patterns respectively overlapping the first to third reflective patterns. In such an embodiment, one of the first to third color patterns may transmit light provided from the pixel.

In an embodiment, the light provided from the pixel may be blue light.

In an embodiment, the bezel layer may include a bottom facing the rear surface, an upper portion opposite the bottom, and a side portion connecting the bottom and the upper portion to each other, and the side portion may be inclined at an inclination angle with respect to the bottom.

In an embodiment, the bezel layer may have a closed loop shape surrounding the transmissive area.

Drawings

The exemplary embodiments will be more clearly understood from the following brief description in conjunction with the accompanying drawings. The drawings represent non-limiting exemplary embodiments as described herein.

Fig. 1 is a perspective view of a display device according to an embodiment of the invention.

Fig. 2 is an exploded perspective view of a display device according to an embodiment of the invention.

Fig. 3 is a sectional view illustrating a display device according to an embodiment of the invention.

Fig. 4 is a sectional view illustrating a display device according to an alternative embodiment of the invention.

Fig. 5 is a sectional view illustrating a cover panel according to an embodiment of the invention.

Fig. 6 is a sectional view illustrating a cover panel according to an alternative embodiment of the present invention.

Fig. 7 is a sectional view showing a cover panel according to another alternative embodiment of the invention.

Fig. 8 is a sectional view showing a cover panel according to another alternative embodiment of the invention.

Fig. 9A to 9G are sectional views illustrating a method of manufacturing a display device according to an embodiment of the invention.

Detailed Description

The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art. In the drawings, the thickness of layers and regions are exaggerated for clarity. Like reference numerals in the drawings denote like elements, and thus their description will be omitted.

It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present. Like reference numerals refer to like elements throughout. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. Other words used to describe the relationship between elements or layers should be interpreted in a similar manner (e.g., "between … …" and "directly between … …", "adjacent to … …" and "directly adjacent to … …", "on … …" and "directly on … …").

It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments.

Spatially relative terms such as "below … …," "below … …," "below," "above … …," "above," and the like may be used herein to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures for ease of description. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below … …" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. "or" means "and/or". "at least one of (a) and (B)" means "a and/or B". As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It will be further understood that the terms "comprises," "comprising," "includes" and/or "including," if used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

As used herein, "about" or "substantially" includes the stated value and means: taking into account the measurement in question and the error associated with the measurement of the specific quantity (i.e. the limitations of the measurement system), is within the acceptable deviation of the specific value as determined by a person skilled in the art.

Exemplary embodiments of the invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the exemplary embodiments. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, exemplary embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which exemplary embodiments of the invention belong. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

Hereinafter, embodiments of the invention will be described in detail with reference to the accompanying drawings.

Fig. 1 is a perspective view of a display device according to an embodiment of the invention. Fig. 2 is an exploded perspective view of a display device according to an embodiment of the invention. Fig. 3 is a sectional view illustrating a display device according to an embodiment of the invention. Fig. 4 is a sectional view illustrating a display device according to an embodiment of the invention. Fig. 5 is a sectional view illustrating a cover panel according to an embodiment of the invention. An embodiment of the display device according to the invention will be described in detail with reference to fig. 1 to 5.

Referring to fig. 1 and 2, an embodiment of the display device EA may display an image IM in a third direction D3 that is not parallel (or orthogonal) to a plane defined by the first direction D1 and the second direction D2. The third direction D3 may be a thickness direction of the display device EA. The display device EA may include a cover panel CU, a display panel DP, and a cover case EDC.

In an embodiment, as shown in fig. 2, the cover panel CU may comprise a window layer WM and an optical layer CF. The cover panel CU may be disposed on the display panel DP to cover the front surface IS of the display panel DP. The window layer WM may include a front surface FS exposed to the outside. The image IM displayed on the display panel DP can be seen by the user through the front surface FS.

The window layer WM may have a single-layer structure or a multi-layer structure. In one embodiment, for example, the window layer WM may have a stacked structure including a plurality of plastic films bonded to each other by an adhesive layer, or may have a stacked structure including a glass substrate and a plastic film bonded to each other by an adhesive layer. The window layer WM may be optically transparent. In one embodiment, the window layer WM may comprise glass or plastic, for example.

When viewed from a plan view in the third direction D3, the front surface FS of the window layer WM may include a transmissive area TA and a bezel area BZA. The transmissive area TA may be an area that transmits light provided from the display panel DP. The transmissive area TA may have a shape corresponding to the effective area AA of the display panel DP. In one embodiment, for example, the transmissive area TA may overlap with the entire or a partial area of the front surface of the active area AA. Accordingly, the image IM displayed in the effective area AA of the display panel DP may be provided to the user through the transmissive area TA.

The bezel region BZA may be a region having a lower optical transmittance than that of the transmissive region TA. The bezel area BZA may define the shape of the transmission area TA. The bezel area BZA may be adjacent to the transmission area TA, and may have a closed loop shape surrounding the transmission area TA.

The bezel area BZA may have a predetermined color. The bezel area BZA may cover the peripheral area NAA of the display panel DP and may prevent the peripheral area NAA from being recognized by the user. In one embodiment, for example, when light generated from the display panel DP leaks to the peripheral zone NAA, the bezel zone BZA may block the leaked light, and thus, the peripheral zone NAA may be prevented from being recognized by a user.

The display panel DP may display the image IM through the front surface IS. The anterior surface IS may include an active area AA and a peripheral area NAA. The image IM may be displayed in the effective area AA. The peripheral area NAA may be adjacent to the effective area AA.

The display panel DP may include a plurality of pixels PX. The pixels PX may display an image or emit light in response to an electric signal. Each of the pixels PX may generate light, and such light emitted from the pixels PX may form an image IM to be displayed in the active area AA. In an embodiment, the pixel PX may include one of a pixel PX1 including an organic light emitting device OLED and a pixel PX2 including a liquid crystal display device LC.

The cover shell EDC may be combined with the cover panel CU. The cover case EDC may have a surface serving as a rear surface of the display device EA. The cover shell EDC may be combined with the cover panel CU to define an inner space. The elements of the display panel DP may be disposed or accommodated in the inner space. The cover shell EDC may comprise a material having a particular (e.g., relatively high) stiffness. In one embodiment, for example, the cover shell EDC may include a plurality of frames and/or plates, each of which includes or is formed of at least one of a glass, plastic, and metal material. The cover case EDC may stably protect elements constituting the display device EA received in the internal space from external impact.

Referring to fig. 3, the display device EA may include a display panel DP and a cover panel CU. The display panel DP may include a base layer BS, an auxiliary layer BL, insulating layers 10, 20, 30, and 40, an encapsulation layer ECL, and pixels PX 1.

The base layer BS may serve as a bottom layer of the elements on which the display panel DP is disposed. The base layer BS may comprise an insulating material. In one embodiment, for example, the base layer BS may include glass, a resin film, or a stack of alternately stacked organic and inorganic layers.

Each of the pixels PX1 may generate light, and such light emitted from the pixels PX1 may form an image IM to be displayed in the active area AA. In an embodiment, a plurality of pixels PX1 may be provided. Each of the pixels PX1 may be connected to a plurality of signal lines (not shown). In one embodiment, for example, a signal line such as a gate line or a data line may be connected to each pixel PX 1.

The auxiliary layer BL may include an inorganic material. The auxiliary layer BL may include a barrier layer and/or a buffer layer. In one embodiment, for example, the auxiliary layer BL may effectively prevent oxygen or moisture from entering the pixel PX1 through the base layer BS, or may have a surface energy lower than that of the base layer BS, thereby allowing the pixel PX1 to be stably formed thereon.

At least one of the base layer BS and the auxiliary layer BL may include a plurality of layers alternately stacked with each other. In an embodiment, at least one of the barrier layer and the buffer layer of the auxiliary layer BL may include a plurality of layers or may be omitted. However, the structure of the display panel DP is not limited thereto, and in alternative embodiments, the structure of the display panel DP may be variously modified or changed, and is not limited to a specific structure.

The pixel PX1 may include a first transistor TR-O and an organic light emitting device OLED. The first transistor TR-O may include a semiconductor pattern SP-O, a control electrode GE-O, an input electrode IE-O, and an output electrode OE-O.

The semiconductor pattern SP-O may be disposed on the auxiliary layer BL. The semiconductor pattern SP-O may include a semiconductor material. The control electrode GE-O may be spaced apart from the semiconductor pattern SP-O in the third direction D3 with the first insulating layer 10 interposed therebetween. Control electrode GE-O may comprise a conductive material. In one embodiment, for example, the control electrode GE-O may include at least one of a metal material (e.g., nickel (Ni), molybdenum (Mo), aluminum (Al), titanium (Ti), copper (Cu), and tungsten (W)) and a metal oxide material.

The input electrode IE-O and the output electrode OE-O may be spaced apart from the control electrode GE-O in the second direction D2 with the second insulating layer 20 interposed therebetween. The input electrode IE-O and the output electrode OE-O may be disposed to pass through the first insulating layer 10 and the second insulating layer 20, and may be coupled to two different portions of the semiconductor pattern SP-O, respectively.

Each of the input electrode IE-O and the output electrode OE-O may comprise a conductive material. In one embodiment, for example, each of the input electrode IE-O and the output electrode OE-O may be formed of or may include at least one of nickel (Ni), chromium (Cr), molybdenum (Mo), aluminum (Al), titanium (Ti), copper (Cu), tungsten (W), and alloys thereof. Each of the input electrode IE-O and the output electrode OE-O may have a single-layer structure or a multi-layer structure.

A third insulating layer 30 may be disposed on the second insulating layer 20 to cover the input electrode IE-O and the output electrode OE-O. In an embodiment, the semiconductor pattern SP-O may be disposed on the control electrode GE-O. In alternative embodiments, the semiconductor pattern SP-O may be disposed on the input electrode IE-O and the output electrode OE-O. In another alternative embodiment, the input electrode IE-O and the output electrode OE-O may be disposed in the same layer as the layer under the semiconductor pattern SP-O, and may be directly bonded to the semiconductor pattern SP-O. According to the embodiments of the invention, the structure of the first transistor TR-O may be variously modified or changed, and is not limited to a specific structure of the first transistor TR-O.

The organic light emitting device OLED may be disposed on the third insulating layer 30. The organic light emitting device OLED may include at least one of various light emitting devices. In one embodiment, for example, the organic light emitting device OLED may include an organic light emitting device, an electrophoretic device, an electrowetting device, or a liquid crystal capacitor. Hereinafter, for convenience of description, an embodiment in which the organic light emitting device OLED is an organic light emitting device will be described in detail. The organic light emitting device OLED may include a first electrode E1, a light emitting pattern EP, a control layer EL, and a second electrode E2.

The first electrode E1 may be disposed through the third insulating layer 30 and may be coupled to the first transistor TR-O. In an embodiment, although not shown, the display panel DP may further include an additional connection electrode disposed between the first electrode E1 and the first transistor TR-O, and in such an embodiment, the first electrode E1 may be electrically coupled to the first transistor TR-O through the additional connection electrode.

The fourth insulation layer 40 may be disposed on the third insulation layer 30. The fourth insulating layer 40 may be formed of or may include an organic material and/or an inorganic material, and may have a single-layer structure or a stacked structure of multiple layers. An opening may be defined in the fourth insulating layer 40. The opening may expose at least a portion of the first electrode E1. The fourth insulating layer 40 may be a pixel defining layer.

The light emitting pattern EP may be disposed in an opening defined in the fourth insulating layer 40. The light emitting pattern EP may be disposed on the first electrode E1 exposed by the opening. The light emitting pattern EP may include a light emitting material. In one embodiment, for example, the light emitting pattern EP may include at least one of materials capable of emitting red, green, and blue light, and may include a fluorescent material or a phosphorescent material. The light emitting pattern EP may include an organic light emitting material or an inorganic light emitting material. The light emitting pattern EP may emit light in response to a potential difference between the first electrode E1 and the second electrode E2.

According to an embodiment of the invention, the luminescent pattern EP may comprise quantum dot material. The quantum dot may be a nanocrystal including at least one material selected from the group consisting of II-VI compounds, III-V compounds, IV-VI compounds, IV elements, IV compounds, and combinations thereof.

The II-VI compound may be selected from the group consisting of binary compounds (e.g., including CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, and MgS), mixtures of binary compounds, ternary compounds (e.g., including AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, HgSeTe, HgSTe, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnSe, HgZnTe, ZnSe, MgZnSe, and MgZnSe), mixtures of ternary compounds, quaternary compounds (e.g., including HgZnTeS, CdZnSeS, cdete, CdTe, CdHgSeS, CdHgSeTe, CdHgSTe, ZnSe, and MgS), and mixtures of quaternary compounds.

The III-V compound may be selected from the group consisting of binary compounds (e.g., including GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and InSb), mixtures of binary compounds, ternary compounds (e.g., including GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InP and InP sb), mixtures of ternary compounds, quaternary compounds (e.g., including GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, gainp, GaInNAs, ingansb, GaInPAs, and AlPSb), and mixtures of quaternary compounds.

The group IV-VI compound may be selected from the group consisting of binary compounds (e.g., including SnS, SnSe, SnTe, PbS, PbSe, and PbTe), mixtures of binary compounds, ternary compounds (e.g., including SnSeS, SnSeTe, snstee, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, and SnPbTe), mixtures of ternary compounds, quaternary compounds (e.g., including SnPbSSe, SnPbSeTe, and SnPbSTe), and mixtures of quaternary compounds. The group IV element may be selected from the group consisting of Si, Ge and mixtures thereof. The group IV compound may include a binary compound selected from the group consisting of SiC, SiGe, and a mixture thereof.

Here, the binary compound, the ternary compound, or the quaternary compound may have a uniform concentration throughout the particles, or may have a spatially varying concentration distribution in each particle. In an embodiment, each of the quantum dots may have a core-shell structure in which one quantum dot is surrounded by another quantum dot. At the interface between the core and the shell, the element contained in the shell may have a concentration gradient that decreases in the central direction.

In an embodiment, the quantum dot may have a core-shell structure including a core and a shell surrounding the core, the core including the above-described nanocrystal. The shell of the quantum dot may serve as a protective layer that prevents the chemical properties of the core from being changed and retains the semiconductor properties of the core, and/or may serve as a charge layer that allows the quantum dot to have electrophoretic properties. The shell may be a single layer or multiple layers. At the interface between the core and the shell, the element contained in the shell may have a concentration gradient that decreases in the central direction. In one embodiment, for example, the shell of the quantum dot may be formed of or include an oxide compound of a metal element or a non-metal element, a semiconductor compound, or any combination thereof.

In one embodiment, for example, the oxide compound of the metallic element or the non-metallic element of the shell may include a binary compound (e.g., SiO)2、Al2O3、TiO2、ZnO、MnO、Mn2O3、Mn3O4、CuO、FeO、Fe2O3、Fe3O4、CoO、Co3O4And NiO) and ternary compounds (e.g., MgAl)2O4、CoFe2O4、NiFe2O4And CoMn2O4) However, the invention is not limited thereto.

In an embodiment, the semiconductor compound of the shell may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, and AlSb, but the invention is not limited thereto.

In an embodiment, each of the quantum dots may have an emission wavelength spectrum having a full width at half maximum ("FWHM") of less than about 45 nanometers (nm) (e.g., less than about 40nm or less than about 30nm), and in this case, improved color purity or color reproduction characteristics may be achieved. In such embodiments, the quantum dots may allow light to be radially emitted, and thus viewing angle properties may be improved.

In embodiments, the quantum dots may be spherical, pyramidal, multi-armed, or cubic nanoparticles. In alternative embodiments, the quantum dots may be nanotubes, nanowires, nanofibers, nanoplate-like particles, but the invention is not limited thereto.

The wavelength or color of light emitted from the quantum dot may be determined by the particle size of the quantum dot and by providing quantum dots of various sizes, so that various colors (e.g., blue, red, and green) may be enabled.

The control layer EL may be disposed between the first electrode E1 and the second electrode E2. The control layer EL may be disposed adjacent to the light emission pattern EP. The control layer EL may control the movement of charges to improve the light emitting efficiency and lifetime of the organic light emitting device OLED. The control layer EL may include at least one of a hole transport material, a hole injection material, an electron transport material, and an electron injection material.

In the embodiment, as shown in fig. 3, the control layer EL is disposed between the light emission pattern EP and the second electrode E2. However, the invention is not limited thereto, and in alternative embodiments, the control layer EL may be disposed between the light emitting pattern EP and the first electrode E1, or may include a plurality of layers stacked in the third direction D3 with the light emitting pattern EP interposed therebetween. In another alternative embodiment of the organic light emitting device OLED, the control layer EL may be omitted.

The control layer EL may be integrally formed as a single unitary body or a single unitary unit extending from the active area AA to the peripheral area NAA. The control layer EL may be commonly provided for a plurality of pixels PX.

The second electrode E2 may be disposed on the control layer EL. The second electrode E2 may be disposed to face the first electrode E1. The second electrode E2 may be integrally formed as a single unitary body or as a single unitary unit extending from the active area AA to the peripheral area NAA. The second electrode E2 may be commonly disposed for a plurality of pixels PX. The organic light emitting device OLED disposed in each of the pixels PX may receive a common power voltage (hereinafter, a second power voltage) through the second electrode E2.

The second electrode E2 may be formed of or include a transparent conductive material or a semi-reflective conductive material. Accordingly, light generated by the light emitting pattern EP may pass through the second electrode E2 and may propagate in the third direction D3. However, the invention is not limited thereto, and in alternative embodiments, the organic light emitting device OLED may have a backside emission structure in which the first electrode E1 includes a transparent material or a semi-reflective material, or a double-side emission structure in which light is emitted through the top and bottom surfaces of the organic light emitting device OLED.

The encapsulation layer ECL may be disposed on the organic light emitting device OLED to seal or encapsulate the organic light emitting device OLED. The encapsulation layer ECL may be commonly provided for a plurality of pixels PX. Although not shown, a cover layer covering the second electrode E2 may also be disposed between the second electrode E2 and the encapsulation layer ECL.

The encapsulation layer ECL may include a first inorganic layer IOL1, an organic layer OL, and a second inorganic layer IOL2 sequentially stacked on each other in the third direction D3. However, the invention is not limited thereto, and in alternative embodiments, the encapsulation layer ECL may further include at least one of an inorganic layer and an organic layer.

The first inorganic layer IOL1 may cover the second electrode E2. The first inorganic layer IOL1 may effectively prevent external moisture or oxygen from entering the organic light emitting device OLED. In one embodiment, for example, first inorganic layer IOL1 may be formed from or may include at least one of silicon nitride, silicon oxide, and mixtures thereof. The first inorganic layer IOL1 may be disposed or formed by a deposition process.

The organic layer OL may be disposed on the first inorganic layer IOL1 to contact the first inorganic layer IOL 1. The organic layer OL may be disposed on the first inorganic layer IOL1 to have a flat top surface. In one embodiment, for example, the organic layer OL may cover the first inorganic layer IOL1 having an uneven top surface or particles on the first inorganic layer IOL1 to prevent the uneven surface profile of the first inorganic layer IOL1 or to prevent the particles from affecting elements or layers to be formed on the organic layer OL.

In an embodiment, the organic layer OL may relieve stress between layers in contact with each other. The organic layer OL may include an organic material, and may be formed by a solution process such as spin coating, slit coating, and an inkjet process.

A second inorganic layer IOL2 may be disposed on the organic layer OL to cover the organic layer OL. In such embodiments, the organic layer OL has a relatively flat top surface to allow the second inorganic layer IOL2 to be more stably formed thereon than if the second inorganic layer IOL2 were formed on the first inorganic layer IOL 1. The second inorganic layer IOL2 may encapsulate the organic layer OL and may effectively prevent moisture from entering into the organic layer OL. The second inorganic layer IOL2 may include at least one of silicon nitride, silicon oxide, and mixtures thereof. The second inorganic layer IOL2 may be formed by a deposition process.

In an embodiment, the cover panel CU may be disposed on the encapsulation layer ECL. The cover panel CU may comprise a planarization layer COL arranged on the second inorganic layer IOL 2.

The planarization layer COL may cover the uneven front surface of the encapsulation layer ECL and may provide a flat surface to the active area AA. However, the invention is not limited thereto, and in alternative embodiments, the cover panel CU may include a plurality of planarization layers COL, or may not have any planarization layer COL.

Referring to fig. 4, an alternative embodiment of the display device EA-1 may include a backlight unit BLU, a display panel DP-1, and a cover panel CU. The display panel DP-1 may include a base layer SUB, insulating layers INS1 and INS2, polarizers POL1 and POL2, alignment layers AL1 and AL2, and pixels PX 2.

The backlight unit BLU may supply light to the display panel DP-1. The light LS emitted from the backlight unit BLU may have a specific wavelength range. In one embodiment, for example, the light LS may be ultraviolet light ("UV") or blue light. In an embodiment where the light LS is emitted from a side surface of the backlight unit BLU, a light guide plate (not shown) may also be provided to guide the light LS to a side surface of the base layer SUB.

The base layer SUB may serve as a bottom layer on which elements of the display panel DP-1 are disposed. The substrate layer SUB may comprise an insulating material. In one embodiment, for example, the base layer SUB may include glass, a resin film, or a stack of alternately stacked organic and inorganic layers.

Each of the pixels PX2 may generate light, and such light emitted from the pixels PX2 may form an image IM to be displayed in the active area AA. A plurality of pixels PX2 may be provided. Each of the pixels PX2 may be connected to a plurality of signal lines (not shown). In one embodiment, for example, a signal line such as a gate line and a data line may be connected to each of the pixels PX 2.

The pixel PX2 may include a second transistor TR-L and a liquid crystal display device LC. The second transistor TR-L may include a control electrode GE-L, a semiconductor pattern SP-L, an input electrode IE-L, and an output electrode OE-L. The control electrode GE-L may be disposed on the base layer SUB. Control electrode GE-L may include a conductive material. In one embodiment, for example, the control electrode GE-L may include at least one of a metal material (e.g., nickel (Ni), molybdenum (Mo), aluminum (Al), titanium (Ti), copper (Cu), and tungsten (W)) and a metal oxide material.

A first insulating layer INS1 may be disposed on the base layer SUB to cover the control electrode GE-L.

The semiconductor pattern SP-L may be disposed on the first insulating layer INS 1. The semiconductor pattern SP-L may include a semiconductor material. At least a portion of the semiconductor pattern SP-L may overlap the control electrode GE-L.

The input electrode IE-L and the output electrode OE-L may be disposed on the first insulating layer INS 1. The input electrode IE-L may include two portions, one of which is connected to a data line (not shown) and the other of which overlaps the semiconductor pattern SP-L. The output electrode OE-L may include two portions, one of which overlaps the semiconductor pattern SP-L and the other of which is connected to the first electrode PE. Input electrode IE-L and output electrode OE-L may be spaced apart from each other in second direction D2.

Each of input electrode IE-L and output electrode OE-L may comprise a conductive material. In one embodiment, for example, each of the input electrode IE-L and the output electrode OE-L may be formed of or may include at least one of nickel (Ni), chromium (Cr), molybdenum (Mo), aluminum (Al), titanium (Ti), copper (Cu), tungsten (W), and alloys thereof. Each of the input electrode IE-L and the output electrode OE-L may have a single-layer structure or a multi-layer structure.

The second insulating layer INS2 may be disposed on the first insulating layer INS 1. The second insulating layer INS2 may cover the second transistor TR-L. The second insulating layer INS2 may include an organic layer and/or an inorganic layer. The second insulating layer INS2 may have a single-layer structure or a multi-layer structure. In one embodiment, for example, the second insulating layer INS2 may include an inorganic layer disposed on the second transistor TR-L and an organic layer disposed on the inorganic layer to have a flat top surface.

The first electrode (or pixel electrode) PE may be disposed on the second insulating layer INS 2. The first electrode PE may be electrically connected to the output electrode OE-L through a contact hole defined or formed through the second insulating layer INS 2. The first electrode PE may include a transparent conductive material. In one embodiment, for example, the first electrode PE may include at least one of indium oxide, gallium oxide, titanium oxide, and zinc oxide.

The liquid crystal layer CL may include liquid crystal molecules exhibiting anisotropic properties or a specific orientation. The alignment of the liquid crystal molecules may be controlled by an electric field generated by a voltage difference between the second electrode CE and the first electrode PE. The amount of light passing through the liquid crystal layer CL can be adjusted by controlling the orientation of the liquid crystal molecules.

The second electrode (or common electrode) CE may face the first electrode PE. The second electrode CE together with the first electrode PE may constitute or jointly define a liquid crystal capacitor. The second electrode CE may include a transparent conductive material. In one embodiment, for example, the second electrode CE may include at least one of indium tin oxide, indium zinc oxide, indium gallium zinc oxide, zinc oxyfluoride, gallium zinc oxide, and tin oxide.

In an alternative embodiment, although not shown, the second electrode CE may be disposed on the base layer SUB. In such an embodiment, the second electrode CE and the first electrode PE may be disposed in the same layer as each other, or may be disposed in different layers from each other with an insulating layer interposed therebetween.

In an embodiment, the display panel DP-1 may further include a first alignment layer AL1 and a second alignment layer AL 2. The first alignment layer AL1 may be disposed between the first electrode PE and the liquid crystal layer CL, the second alignment layer AL2 may be disposed between the liquid crystal layer CL and the second electrode CE, and the first alignment layer AL1 and the second alignment layer AL2 may control the alignment of liquid crystal molecules of the liquid crystal layer CL. The first and second alignment layers AL1 and AL2 may be vertical alignment layers, and may include polyamic acid, polysiloxane, polyimide, or the like.

According to an embodiment of the invention, the display panel DP-1 may include at least one polarizer. In one embodiment, for example, the display panel DP-1 may include a first polarizer POL1 and a second polarizer POL2, the first polarizer POL1 and the second polarizer POL2 being disposed to change a polarization state of light incident from the backlight unit BLU. The first polarizer POL1 may be disposed to face the backlight unit BLU. The second polarizer POL2 may be disposed between the common electrode CE and the planarization layer COL. The polarizer may have a structure including a plurality of patterns or a plurality of stacked inorganic layers for changing a polarization state of incident light. In one embodiment, for example, the polarizer may comprise a wire grid polarizer or a distributed Bragg reflector and a polarizing film.

In an embodiment, the cover panel CU may be disposed on the second polarizer POL 2. The cover panel CU may include a planarization layer COL disposed on the second polarizer POL 2.

The planarization layer COL may cover the second polarizer POL2 and may provide a flat surface in the active area AA. However, the invention is not limited thereto, and in alternative embodiments, the cover panel CU may include a plurality of planarization layers COL, or may not have any planarization layer COL.

The cover panel CU provided on the display panel DP or DP-1 is shown separately in fig. 5. In fig. 5, the planarization layer COL of the cover panel CU is omitted. In an embodiment, the cover panel CU may be disposed on the display panel DP or DP-1. The cover panel CU may comprise a window layer WM and an optical layer CF.

In an embodiment, the optical layer CF may include a partition wall layer WA, a reflective layer CC, a light blocking layer ABM, and a color filter layer CP disposed in the transmission area TA. In such an embodiment, the optical layer CF may include a bezel layer NBM disposed in the bezel region BZA.

In an embodiment, the partition wall layer WA, the reflective layer CC, and the light blocking layer ABM may collectively define a filter layer.

The partition wall layer WA of the filter layer may be disposed on the window layer WM. In one embodiment, for example, the partition wall layer WA may be disposed on the rear surface (i.e., the surface facing the display panel DP or DP-1) of the window layer WM. The partition wall layer WA may be disposed on the rear surface of the window layer WM to prevent the display panel DP or DP-1 from being displayed through the window layer WM due to external incident light. The partition wall layer WA may include a light blocking organic material. The partition wall layer WA may have a predetermined color. In one embodiment, for example, the partition wall layer WA may have a blue color.

The partition wall layer WA includes a plurality of openings OP. For example, a plurality of openings OP may be defined in the partition wall layer WA. At least a portion of the window layer WM may be exposed through the opening OP of the partition wall layer WA. The opening OP may overlap a corresponding light emitting region of the display panel DP. In one embodiment, for example, the opening OP may overlap the light emitting pattern EP of the organic light emitting device OLED of fig. 3. In an alternative embodiment, the opening OP may overlap the first electrode (or the pixel electrode) PE of the liquid crystal display device LC of fig. 4. The light emitting region in each of fig. 3 and 4 is depicted by a dotted line.

The reflective layer CC of the filter layer may be disposed on the rear surface of the window layer WM. The reflective layer CC together with the barrier layer WA may prevent the display panel DP or DP-1 from being displayed through the window layer WM due to external incident light.

The reflective layer CC may include a first reflective pattern CC1, a second reflective pattern CC2, and a third reflective pattern CC 3. Each of the first, second, and third reflective patterns CC1, CC2, and CC3 may be disposed in a corresponding one of the openings OP. Each of the first, second, and third reflection patterns CC1, CC2, and CC3 may overlap a light emitting region of the display panel DP or DP-1.

The first, second, and third reflective patterns CC1, CC2, and CC3 may block or transmit different colors of light. In one embodiment, for example, the first reflective pattern CC1 may transmit only blue light, the second reflective pattern CC2 may transmit only red light while blocking blue light, and the third reflective pattern CC3 may transmit only green light while blocking blue light.

Each of the first, second, and third reflection patterns CC1, CC2, and CC3 may include a light blocking organic material. The first, second, and third reflection patterns CC1, CC2, and CC3 may have colors different from each other. In one embodiment, for example, the first reflective pattern CC1 may have a blue color, the second reflective pattern CC2 may have a red color, and the third reflective pattern CC3 may have a green color.

In an embodiment, the first reflection pattern CC1 and the partition wall layer WA may be formed simultaneously by the same process or during the same process. Accordingly, in such an embodiment, the first reflection pattern CC1 may include the same material as that of the partition wall layer WA and may have the same color as that of the partition wall layer WA. The first reflection pattern CC1 may be a pattern formed through the same process as that for the partition wall layer WA. Although the first reflection pattern CC1 and the partition wall layer WA are illustrated as separate elements by using a dotted line for convenience of description in fig. 5, the first reflection pattern CC1 may be defined by a portion of the partition wall layer WA.

The partition wall layers WA may have widths different from each other when viewed in a cross-sectional view. In one embodiment, for example, the first reflection pattern CC1 may be defined by a portion of the partition wall layer WA, and thus, the width of the partition wall layer WA provided with the first reflection pattern CC1 in a specific direction may be greater than the width of the partition wall layer WA provided between the second reflection pattern CC2 and the third reflection pattern CC 3.

In an embodiment, the first reflection pattern CC1 may have a different planar shape from the second and third reflection patterns CC2 and CC 3. In one embodiment, for example, the top surface of the first reflection pattern CC1 may be coplanar with the top surface of the partition wall layer WA. In such an embodiment, the second and third reflection patterns CC2 and CC3 may cover at least a portion of the partition wall layer WA and the light blocking layer ABM. In such an embodiment, the second and third reflective patterns CC2 and CC3 adjacent thereto may have side surfaces contacting each other.

The light-blocking layer ABM of the filter layer may be disposed on the partition wall layer WA. The partition wall layer WA may not overlap with the light emitting region of the display panel DP or DP-1. The light blocking layer ABM may be disposed between the light emitting regions to absorb light that may leak to the adjacent light emitting regions. In such embodiments, the light blocking layer ABM may comprise an optically opaque material. In one embodiment, for example, the light blocking layer ABM may include at least one of metal particles, an oxide of the metal particles, and an organic material, and a metal element of the metal particles includes at least one of chromium (Cr), silver (Ag), molybdenum (Mo), nickel (Ni), titanium (Ti), and tantalum (Ta).

The light blocking layer ABM may be disposed between light emitting regions of the display panel DP or DP-1 to prevent a color mixing problem from occurring between different light emitting regions, so that a display device EA or EA-1 having improved color reproduction characteristics may be implemented.

The color filter layer CP may improve color reproduction characteristics of light provided from the display panel DP or DP-1. The color filter layer CP may include a first color pattern CP1, a second color pattern CP2, and a third color pattern CP 3. Each of the first, second, and third color patterns CP1, CP2, and CP3 may overlap a corresponding one of the first, second, and third reflection patterns CC1, CC2, and CC 3. In one embodiment, for example, the first color pattern CP1 may be disposed on the first reflection pattern CC 1. The second color pattern CP2 may be disposed on the second reflection pattern CC2, and the third color pattern CP3 may be disposed on the third reflection pattern CC 3.

In an embodiment, the first color pattern CP1 may display the same color as that of light provided from the display panel DP or DP-1. In one embodiment, for example, the blue light generated by the display panel DP or DP-1 may pass through the first color pattern CP1 as it is. The first color pattern CP1 corresponding to the region emitting blue light may include a material in which a phosphor or quantum dots are not included, and the material transmits blue light incident to the first color pattern CP 1. The first color pattern CP1 may also include elements that cause scattering of incident light. In one embodiment, for example, the first color pattern CP1 may include titanium oxide (TiO)2) At least one of a polymer (e.g., a photosensitive resin), a blue dye, and a blue pigment, but the invention is not limited thereto. In one embodiment, for example, any material that does not cause a color change of blue light may be used for the first color pattern CP 1.

Each of the second and third color patterns CP2 and CP3 may include a plurality of quantum dots for converting light. The quantum dot may be a nanocrystal including at least one material selected from the group consisting of group II-VI compounds, group III-V compounds, group IV-VI compounds, group IV elements, group IV compounds, and combinations thereof.

The II-VI compound may be selected from the group consisting of binary compounds (e.g., including CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, and MgS), mixtures of binary compounds, ternary compounds (e.g., including AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, HgSeTe, HgSTe, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnSe, HgZnTe, ZnSe, MgZnSe, and MgZnSe), mixtures of ternary compounds, quaternary compounds (e.g., including HgZnTeS, CdZnSeS, cdete, CdTe, CdHgSeS, CdHgSeTe, CdHgSTe, ZnSe, and MgS), and mixtures of quaternary compounds.

The III-V compound may be selected from the group consisting of binary compounds (e.g., including GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and InSb), mixtures of binary compounds, ternary compounds (e.g., including GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InP and InP sb), mixtures of ternary compounds, quaternary compounds (e.g., including GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, gainp, GaInNAs, ingansb, GaInPAs, and AlPSb), and mixtures of quaternary compounds.

The group IV-VI compound may be selected from the group consisting of binary compounds (e.g., including SnS, SnSe, SnTe, PbS, PbSe, and PbTe), mixtures of binary compounds, ternary compounds (e.g., including SnSeS, SnSeTe, snstee, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, and SnPbTe), mixtures of ternary compounds, quaternary compounds (e.g., including SnPbSSe, SnPbSeTe, and SnPbSTe), and mixtures of quaternary compounds. The group IV element may be selected from the group consisting of Si, Ge and mixtures thereof. The group IV compound may include a binary compound selected from the group consisting of SiC, SiGe, and a mixture thereof.

Here, the binary compound, the ternary compound, or the quaternary compound may have a uniform concentration throughout the particles, or may have a spatially varying concentration distribution in each particle. In certain embodiments, each of the quantum dots may have a core-shell structure in which one quantum dot is surrounded by another quantum dot. At the interface between the core and the shell, the element contained in the shell may have a concentration gradient that decreases in the central direction.

In an embodiment, the quantum dot may have a core-shell structure including a core and a shell surrounding the core, the core including the above-described nanocrystal. The shell of the quantum dot may serve as a protective layer that prevents the chemical properties of the core from being changed and retains the semiconductor properties of the core, and/or may serve as a charge layer that allows the quantum dot to have electrophoretic properties. The shell may be a single layer or multiple layers. At the interface between the core and the shell, the element contained in the shell may have a concentration gradient that decreases in the central direction. In one embodiment, for example, the shell of the quantum dot may be formed of or include an oxide compound of a metal element or a non-metal element, a semiconductor compound, or any combination thereof.

In one embodiment, for example, the oxide compound of the metallic element or the non-metallic element for the shell may include a binary compound (e.g., SiO)2、Al2O3、TiO2、ZnO、MnO、Mn2O3、Mn3O4、CuO、FeO、Fe2O3、Fe3O4、CoO、Co3O4And NiO) and ternary compounds (e.g. MgAl)2O4、CoFe2O4、NiFe2O4And CoMn2O4) However, the invention is not limited to these examples.

In an embodiment, the semiconductor compound for the shell may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, and AlSb, but the invention is not limited to these examples.

Each of the quantum dots may have a light emission wavelength spectrum with a FWHM of less than about 45nm (e.g., less than about 40nm or less than about 30nm), and in such embodiments, improved color purity or color reproduction characteristics may be achieved. In an embodiment, the quantum dots may allow light to be radially emitted, and thus may improve viewing angle characteristics.

In embodiments, the quantum dots may be spherical, pyramidal, multi-armed, or cubic nanoparticles. In alternative embodiments, the quantum dots may be nanotubes, nanowires, nanofibers, nanoplate-like particles, but the invention is not limited to these examples.

The wavelength or color of light emitted from the quantum dot may be determined by the particle size of the quantum dot and by providing quantum dots of various sizes, so that various colors (e.g., blue, red, and green) may be enabled.

The bezel layer NBM may be disposed on the rear surface of the window layer WM. The bezel layer NBM may be disposed in a bezel region BZA of the rear surface of the window layer WM. The bezel layer NBM may be disposed in the bezel region BZA to surround the transmission region TA. In one embodiment, for example, the bezel layer NBM may have a closed loop shape surrounding the transmissive area TA. However, the invention is not limited to this or a specific embodiment, and in alternative embodiments, the shape of the bezel layer NBM may be variously modified or changed according to the shape of the bezel region BZA defined in the window layer WM.

The bezel layer NBM may include an optically opaque material. The bezel layer NBM may absorb light emitted from the pixels PX1 or PX2 of the display panel DP or DP-1 and leaked to the bezel region BZA through the peripheral region NAA. Accordingly, it is possible to effectively prevent the light leakage problem of the leaked light recognized by the user through the bezel region BZA of the window layer WM, thereby providing a display device with improved reliability.

In an embodiment, the bezel layer NBM may be formed through the same process as that for the light blocking layer ABM. Accordingly, the bezel layer NBM and the light blocking layer ABM may include the same material as each other and may have the same color as each other. In an embodiment, the bezel layer NBM and the light blocking layer ABM may have the same thickness as each other in the thickness direction of the cover panel CU.

The bezel layer NBM may comprise a bottom NBM-B facing the rear surface of the window layer WM, an upper NBM-U opposite to the bottom NBM-B, and a side NBM-S connecting the bottom NBM-B with the upper NBM-U. In an embodiment, the side portion NBM-S may be inclined at an inclination angle with respect to the bottom portion NBM-B. In one embodiment, for example, the bezel layer NBM may have a tapered shape when viewed in a sectional view. However, the invention is not limited to this or a particular embodiment, and in alternative embodiments, the side NBM-S may extend vertically from the bottom NBM-B and may be connected to the upper NBM-U.

According to the embodiments of the invention, since the light blocking layer ABM of the transmission region TA and the bezel layer NBM of the bezel region BZA are formed through the same process, process costs and process time may be reduced.

In an embodiment, the cover panel CU may further comprise a cover inorganic layer CIOL. The overlying inorganic layer CIOL may be providedPlaced over the entire surface of the window layer WM. The capping inorganic layer CIOL may cover the color filter layer CP and may effectively prevent oxygen and moisture from entering the color filter layer CP. The capping inorganic layer CIOL may be made of silicon oxide (SiO)x) And silicon nitride (SiN)x) Or may comprise silicon oxide (SiO), or may comprise silicon oxide (SiO)x) And silicon nitride (SiN)x) At least one of (1).

Fig. 6 is a sectional view illustrating a cover panel according to an alternative embodiment of the present invention. Fig. 7 is a sectional view showing a cover panel according to another alternative embodiment of the invention. Fig. 8 is a sectional view showing a cover panel according to another alternative embodiment of the invention. For the sake of brevity, the same or identical elements as those previously described with reference to fig. 1 to 5 may be denoted by the same reference numerals, and any repetitive detailed description thereof will be omitted.

Referring to FIG. 6, an embodiment of the cover panel CU-A may further include an additional light blocking layer NWA. An additional light-blocking layer NWA may be disposed on the rear surface of the window layer WM. An additional light-blocking layer NWA may be disposed in the bezel area BZA that is a part of the rear surface of the window layer WM.

In an embodiment, the bezel layer NBM may be disposed on the additional light-blocking layer NWA. The additional light-blocking layer NWA may be formed through the same process as that for the partition wall layer WA. Accordingly, the additional light-blocking layer NWA may include the same material as that of the partition wall layer WA and may have the same color as that of the partition wall layer WA. In one embodiment, for example, both the additional light-blocking layer NWA and the partition wall layer WA may have a blue color.

Referring to FIG. 7, an embodiment of the cover panel CU-B may also include a height difference compensation layer DOL. The level difference compensating layer DOL may be provided on the rear surface of the window layer WM. The height difference compensation layer DOL may be disposed in a frame region BZA of the rear surface of the window layer WM.

In an embodiment, the height difference compensation layer DOL may be disposed on the bezel layer NBM. The height difference compensation layer DOL may include an organic material.

The height difference compensating layer DOL may compensate for a height difference between elements of the cover panel CU-B, and thus, the cover panel CU-B may have improved impact resistance properties.

Referring to fig. 8, in an alternative embodiment, unlike the first reflection pattern CC1 of fig. 6, the first reflection pattern CC1-C of the cover panel CU-C may cover at least one side of the barrier layer WA and the light blocking layer ABM. In such an embodiment, a portion of the first reflective pattern CC1-C may be in contact with a side of the second reflective pattern CC 2. In such an embodiment, the first, second, and third reflective patterns CC1-C, CC2, and CC3 may have top surfaces that are substantially coplanar with each other.

Fig. 9A to 9G are sectional views illustrating a method of manufacturing a display device according to an embodiment of the invention. For the sake of brevity, the same or like elements as those previously described with reference to fig. 1 to 5 may be denoted by the same reference numerals, and any repetitive detailed description thereof will be omitted. Hereinafter, a method of manufacturing a display device according to an embodiment of the invention will be described with reference to fig. 9A to 9G.

Referring to fig. 9A, the manufacturing method may include providing or forming an initial partition wall layer CC 1-a. An initial partition wall layer CC1-a may be provided (e.g., coated) on the rear surface of window layer WM. The initial partition wall layer CC1-a may include a light blocking organic material. The initial partition wall layer CC1-a may have a predetermined color. In one embodiment, for example, initial partition wall layer CC1-A may have a blue color.

Hereinafter, as shown in fig. 9B, partition wall layer WA may be formed using initial partition wall layer CC 1-a. The step of forming the partition wall layer WA may include patterning the initial partition wall layer CC1-a by a photolithography process using the first mask MS 1. Patterning may be performed to form the openings OP in the partition wall layer WA. The opening OP may be formed to expose at least a portion of the rear surface of the window layer WM.

Thereafter, as shown in fig. 9C and 9D, a first material and a second material may be coated on the window layer WM. The first material may be an organic material coated in the transmissive area TA of the window layer WM, and the second material may be an organic material coated in the frame area BZA of the window layer WM. The first material may be coated in the transmissive area TA of the window layer WM to cover the partition wall layer WA.

Next, the first material may be patterned to form a light blocking layer ABM. A light blocking layer ABM may be formed on the partition wall layer WA to overlap the transmission area TA.

In such embodiments, the second material may be patterned to form the bezel layer NBM. A bezel layer NBM may be formed on the rear surface of the window layer WM to overlap with the bezel region BZA.

According to an embodiment of the invention, the first material and the second material may be substantially identical to each other. The first material and the second material may define an initial light blocking layer BMA, and the initial light blocking layer BMA may include a light absorbing organic material. Accordingly, the light blocking layer ABM and the bezel layer NBM may be formed of the same material as each other or the same material as that of the initial light blocking layer BMA. The light blocking layer ABM and the bezel layer NBM may be formed by patterning the initial light blocking layer BMA through a photolithography process using a second mask MS 2.

In an embodiment, the light blocking layer ABM and the bezel layer NBM may be simultaneously patterned through the same process, and thus costs and time in the manufacturing process may be reduced. Accordingly, in such an embodiment, process efficiency in a process of manufacturing a display device may be improved.

Next, as shown in fig. 9E, reflection patterns CC2 and CC3 may be provided or formed. Each of the reflection patterns CC2 and CC3 may be formed to overlap a corresponding one of the openings OP defined in the partition wall layer WA. Each of the reflection patterns CC2 and CC3 may be formed by coating a light blocking organic material and then performing a photolithography process. The reflection patterns CC2 and CC3 may be formed of different color organic materials, respectively. In an embodiment, the first reflection pattern CC1 may be formed by patterning the initial partition wall layer CC1-a (i.e., by the same process as that used to form the partition wall layer WA), and thus, the first reflection pattern CC1 and the partition wall layer WA may be connected to each other to constitute a single whole. However, for convenience of description, the first reflection pattern CC1 and the partition wall layer WA are depicted as two separate elements.

Thereafter, as shown in fig. 9F, a color filter layer CP may be disposed on the first, second, and third reflective patterns CC1, CC2, and CC 3. The color filter layer CP may include a first color pattern CP1, a second color pattern CP2, and a third color pattern CP3 emitting light of colors different from each other. A first color pattern CP1, a second color pattern CP2, and a third color pattern CP3 may be formed on corresponding ones of the first, second, and third reflection patterns CC1, CC2, and CC3, respectively. The first, second, and third color patterns CP1, CP2, and CP3 may include different quantum dots for emitting different colors of light.

Next, as shown in fig. 9G, a capping inorganic layer CIOL may be provided or formed. A capping inorganic layer CIOL may be formed on the rear surface of the window layer WM. The capping inorganic layer CIOL may cover the color filter layer CP. The first, second, and third color patterns CP1, CP2, and CP3 may be divided by the capping inorganic layer CIOL. The capping inorganic layer CIOL may effectively prevent moisture and oxygen from entering the color filter layer CP.

According to the embodiments of the invention, the bezel layer including the light blocking material therein may be disposed in the bezel region of the window layer, thereby effectively preventing a light leakage problem in which light leaked from the pixels is recognized by a user through the bezel region. Thus, in such embodiments, the display device has improved reliability.

In an embodiment, the bezel layer and the light blocking layer may be disposed or formed through the same process, so that process efficiency in a process of manufacturing the display device may be improved.

Although the invention has been described with reference to exemplary embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Accordingly, it should be understood that the above-described embodiments are not limiting, but illustrative. The scope of the invention is, therefore, indicated by the broadest permissible interpretation of the following claims and their equivalents, and shall not be restricted or limited by the foregoing description.

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