阅读说明：本技术 电子设备 (Electronic device ) 是由 中村司 大中希 福吉健蔵 于 2018-01-15 设计创作，主要内容包括：本发明的电子设备具备：显示区域及边框区域,在从观察方向观察的俯视时,上述边框区域位于上述显示区域的周围；第1基板,具备第1面和第2面；第2基板,具备第3面和第4面；第3基板,具备第5面和第6面；以及控制部,控制触摸传感功能,显示功能,通信功能及非接触充电功能。在从上述观察方向观察时,上述第1基板,上述第2基板及上述第3基板依次层叠。上述第1基板在上述第2面具备触摸传感功能层,该触摸传感功能层使可见光区的光透射,包含静电电容方式的触摸传感布线单元及第1天线单元。在上述第2面与上述第3面之间设置有显示功能层。上述第2基板在上述第3面具备对上述显示功能层进行驱动的薄膜晶体管阵列及第3天线单元。上述第3基板在上述第5面具备至少进行上述电子设备的外部与内部之间的通信功能、以及上述电子设备从外部的非接触充电功能的环形天线、第2天线单元、以及第4天线单。上述第1天线单元及上述第2天线单元在从上述观察方向观察的俯视时重叠。上述第3天线单元及上述第4天线单元在从上述观察方向观察的俯视时重叠。(An electronic device of the present invention includes: a display region and a frame region, the frame region being located around the display region in a plan view viewed from an observation direction; a 1 st substrate having a 1 st surface and a 2 nd surface; a 2 nd substrate having a 3 rd surface and a 4 th surface; a 3 rd substrate having a 5 th surface and a 6 th surface; and a control unit for controlling the touch sensing function, the display function, the communication function, and the non-contact charging function. The 1 st substrate, the 2 nd substrate, and the 3 rd substrate are sequentially stacked when viewed from the observation direction. The 1 st substrate includes a touch-sensing functional layer transmitting light in a visible light region on the 2 nd surface, and includes a capacitive touch-sensing wiring unit and a 1 st antenna unit. A display function layer is provided between the 2 nd surface and the 3 rd surface. The 2 nd substrate includes a thin film transistor array for driving the display function layer and a 3 rd antenna element on the 3 rd surface. The 3 rd substrate includes a loop antenna, a 2 nd antenna unit, and a 4 th antenna unit on the 5 th surface, the loop antenna having at least a communication function between the outside and the inside of the electronic device and a non-contact charging function of the electronic device from the outside. The 1 st antenna element and the 2 nd antenna element overlap each other in a plan view seen from the observation direction. The 3 rd antenna element and the 4 th antenna element overlap each other in a plan view seen from the observation direction.)

1. An electronic device is provided, which comprises a display panel,

the disclosed device is provided with:

a display region and a frame region, the frame region being located around the display region in a plan view viewed from an observation direction;

a 1 st substrate having a 1 st surface and a 2 nd surface;

a 2 nd substrate having a 3 rd surface and a 4 th surface;

a 3 rd substrate having a 5 th surface and a 6 th surface; and

a control unit that controls a touch sensing function, a display function, a communication function, and a non-contact charging function;

the 1 st substrate, the 2 nd substrate, and the 3 rd substrate are sequentially stacked when viewed from the viewing direction,

the 1 st substrate includes a touch-sensing functional layer transmitting light in a visible light region on the 2 nd surface, and includes a touch-sensing wiring unit of an electrostatic capacitance system and a 1 st antenna unit,

a display function layer is provided between the 2 nd surface and the 3 rd surface,

the 2 nd substrate includes a thin film transistor array for driving the display function layer and a 3 rd antenna element on the 3 rd surface,

the 3 rd substrate includes a loop antenna, a 2 nd antenna unit, and a 4 th antenna unit on the 5 th surface, the loop antenna performing at least a communication function between the outside and the inside of the electronic device and a non-contact charging function of the electronic device from the outside,

the 1 st antenna element and the 2 nd antenna element are overlapped in a plan view seen from the observation direction,

the 3 rd antenna element and the 4 th antenna element overlap each other in a plan view seen from the observation direction.

2. The electronic device of claim 1,

the display function layer is formed of a plurality of light emitting diode elements.

3. The electronic device of claim 1,

the display function layer is composed of a plurality of organic EL elements.

4. The electronic device of claim 1,

the touch sensing wiring unit includes:

a plurality of 1 st conductive wirings extending in parallel in a 1 st direction;

an insulating layer; and

and a plurality of 2 nd conductive wirings laminated on the 1 st conductive wiring via the insulating layer and extending in parallel in a 2 nd direction orthogonal to the 1 st direction.

5. The electronic device of claim 4,

the disclosed device is provided with:

and a light absorbing layer provided on the 1 st conductive wiring and the 2 nd conductive wiring when viewed from the observation direction.

6. The electronic device of claim 4,

the 1 st conductive line and the 2 nd conductive line have a multilayer structure of at least 2 layers including a copper layer or a copper alloy layer.

7. The electronic device of claim 4,

the 1 st conductive line and the 2 nd conductive line include:

at least a copper layer or a copper alloy layer; and

and light absorbing layers provided on front and back sides of the 1 st conductive wiring and the 2 nd conductive wiring, respectively, when viewed from the observation direction.

8. The electronic device of claim 1,

the 1 st antenna element, the 2 nd antenna element, the 3 rd antenna element, and the 4 th antenna element are each smaller in size than the loop antenna,

the 1 st antenna element, the 2 nd antenna element, the 3 rd antenna element, and the 4 th antenna element are disposed at positions that do not overlap with the loop antenna in a plan view seen from the observation direction.

9. The electronic device of claim 1,

the 1 st antenna unit includes 21 st loop antennas having a winding number of 2 or more and opposite winding directions,

the 2 nd antenna unit includes 2 nd loop antennas having a winding number of turns of 2 or more and winding directions opposite to each other,

one of the 21 st loop antennas and one of the 2 nd loop antennas are overlapped in a planar view with the same winding direction, and transmit and receive signals related to touch sensing without contact,

the other of the 21 st loop antennas and the other of the 2 nd loop antennas are overlapped in a planar view in the same winding direction, and supply and reception of electric power necessary for touch sensing are performed in a non-contact manner.

10. The electronic device of claim 1,

the 3 rd antenna unit includes 23 rd loop antennas having a winding number of turns of 2 or more and opposite winding directions,

the 4 th antenna unit includes 24 th loop antennas having a winding number of turns of 2 or more and winding directions opposite to each other,

one of the 23 rd loop antennas and one of the 24 th loop antennas are overlapped in a planar view with the same winding direction, and transmit and receive signals related to driving of the display function layer in a non-contact manner,

the other of the 23 rd loop antennas and the other of the 24 th loop antennas are overlapped in a planar view with the same winding direction, and supply and receive of electric power necessary for driving the display function layer are performed in a non-contact manner.

11. The electronic device of claim 1,

the 1 st antenna element and the 2 nd antenna element are partially surrounded by a conductive pattern in a plan view,

the 3 rd antenna element and the 4 th antenna element are partially surrounded by a conductive pattern in a plan view.

12. The electronic device of claim 1,

the thin film transistors constituting the thin film transistor array described above have at least a channel layer made of an oxide semiconductor.

Technical Field

The present invention relates to an electronic device that includes a display unit and is capable of touch sensing and non-contact charging.

Background

Display devices such as smart phones and tablet terminals having a capacitive touch sensing function, which can directly input an input to a display screen using a finger or a pointer, are becoming more common. As the touch sensing function, an external system in which a touch panel is attached to a display surface of a liquid crystal or organic EL (organic electroluminescence) display device, and a built-in system in which a touch sensing function is provided inside a liquid crystal or organic EL display device are known. In recent years, a shift from the peripheral system to the built-in system has been made.

As the touch sensing method, a self capacitance type touch sensing method and a mutual capacitance type touch sensing method are known. The self-capacitance type touch sensing system is a system in which each electrode pattern in which a transparent conductive electrode or the like formed of ITO or the like is electrically independently formed is used to detect the electrostatic capacitance with respect to each electrode. The mutual capacitance type touch sensing method is a method in which touch sensing wirings (hereinafter, simply referred to as touch wirings) are arranged in the X direction and the Y direction, and electrostatic capacitance between the X-direction wirings and the Y-direction wirings is detected.

The built-in type has a structure in which touch wiring is formed at a position close to a display function layer such as a liquid crystal layer, unlike a touch panel externally provided to a display device. The built-in type does not require a member such as a touch panel, and therefore can provide a thin and lightweight display device and an electronic apparatus. In the built-in type, since the touch wiring is provided at a position close to the display function layer such as the liquid crystal layer, parasitic capacitance is easily generated between the touch wiring and a wiring such as a gate wiring or a source wiring constituting the thin film transistor for driving the display function layer. Thus, there is a tendency to cause a decrease in the S/N ratio of touch sensing (hereinafter referred to as touch). In order to reduce the parasitic capacitance, it is preferable to secure a spatial distance between the surface on which the touch wiring is formed and the surface on which the gate line and the source line are formed. Patent document 1 discloses a structure in which such a spatial distance is secured. As shown in fig. 12 and 13 of patent document 2, a display substrate 22 having a touch sensing function and an array substrate 23 having a thin film transistor are spatially separated by a liquid crystal layer 24. Patent document 2 discloses a technique of forming a metal layer pattern as a touch wiring using an alloy layer composed of copper as a main material.

In the configuration disclosed in patent document 1, the terminal portion 61 having the plurality of metal layer patterns (corresponding to the 1 st touch sensor line) provided on the display substrate 22 and the terminal portion having the plurality of transparent electrode patterns (corresponding to the 2 nd touch sensor line) provided on the display substrate 22 are electrically connected to the connection terminal of the array substrate located in the liquid crystal sealing portion. However, in order to enlarge the effective display area, the width of the frame region of the array substrate in which the liquid crystal sealing portion is formed is narrowed (frame narrowing), and it is extremely difficult to make all the terminal portions of the metal layer pattern and the transparent electrode pattern completely conductive and transferred via the liquid crystal sealing portion.

When the terminal portions are electrically connected to the connection terminals of the liquid crystal sealing portion of the array substrate using conductive particles such as metal balls or gold beads, it is difficult to make more than several hundreds or several thousands of fine terminal portions uniformly electrically connected to the connection terminals of the substrate (array substrate) facing via the liquid crystal sealing portion in the thickness direction. The substrate is extended only at the side where the terminal portion of the display device is present, and conduction can be obtained using a flexible circuit substrate such as an FPC. In recent years, a narrow width of 5mm or less has been required as a width of a light-shielding frame region provided around an effective display region of a display device. The narrow frame or the narrow frame structure is a display device in which the effective display area is enlarged by narrowing the width of the frame area.

In addition to touch input by a finger, in order to enable touch input by a pen or fingerprint authentication, for example, a structure for increasing the wiring density of a plurality of touch wirings extending in the X direction and the Y direction is required. In this case, the number of pixels is required to be about the same as that of a highly fine liquid crystal display device, for example, 2400 pixels × 1200 pixels. In order to realize a touch screen capable of performing touch input with a pen as described above, a structure is required in which the wiring density of a plurality of touch wirings extending in the X direction and the Y direction is increased. Further, a structure applicable to the narrow frame structure described above is also required. Patent document 1 does not disclose a charging method for a portable display device or an electronic device at all.

In portable display devices and electronic apparatuses, charging from an external power supply of 100V is troublesome, and therefore, non-contact charging is increasingly expected. In addition, in most portable devices such as smartphones and tablet terminals, a touch sensing function using a pointer such as a finger is becoming indispensable together with a communication function.

Patent document 2 discloses a configuration in which a planar antenna is provided at an outer peripheral portion of a transparent touch sensor. Paragraph [0006] of patent document 2 describes that the antenna and the touch sensor are integrated to contribute to space saving inside the housing of the display.

Patent document 3 discloses an electronic component 110 embedded in a ceramic layer as described in paragraph [0017], and further describes that the electronic component 110 may include 1 or more antennas as described in paragraph [0020 ]. Patent document 3 does not sufficiently describe the shape of the antenna.

Patent document 4 discloses a structure including a light-emitting panel, a secondary battery, a circuit having an antenna, and a sealing body. In claim 2 of patent document 4, it is shown that a part of the antenna is located between the light-emitting panel and the secondary battery. In paragraph [0043] of patent document 4, it is described that a secondary battery is charged wirelessly (without contact).

Patent document 5 discloses a configuration including a 1 st helical antenna and a 2 nd helical antenna, and also discloses a technique of preventing interference between a plurality of antennas by using a 1 st annular magnetic sheet and a 2 nd planar magnetic sheet.

Patent document 6 discloses a structure of a general display device in which an organic EL is used in a light-emitting layer, as shown in fig. 2 and the like, for example. When a light-Emitting element (light-Emitting layer) such as an organic EL or an led (light Emitting diode) is used, an electrode material having a high reflectance of visible light such as aluminum or silver is used as a pixel electrode (referred to as a light-reflecting layer in patent document 6). Even when the power of the display device having such a configuration is turned off (in the case where the power is turned on), external light such as indoor light is reflected by the pixel electrode, and visibility is degraded. In order to prevent such external light reflection, a circularly polarizing plate (referred to as an antireflection body in patent document 6) is attached to the surface of the display device. In the circularly polarizing plate, resin is used as a base material. Therefore, in order to prevent scratches caused by contact with a pointer such as a pen or a finger in touch sensing input, a protective substrate such as a cover glass is generally disposed on the outermost surface of the display device. The cover glass required to have high strength has a high density of 2.4g/cm³Front and back. For example, the cover glass having a thickness of about 1mm to 0.7mm weighs about 20g in a display device having a screen size of about 6 inches. Therefore, the display device including the cover glass is increased in weight and thickness.

Patent document 7 discloses an electronic device including a planar antenna (island antenna) on an outer surface of a display device of a conductive case.

None of patent documents 1 to 7 discloses a technique for realizing a touch sensing function and a display function by transmission and reception of signals independently performed by a plurality of antenna units and power supply independently performed, which will be described in detail below.

Disclosure of Invention

Problems to be solved by the invention

In view of the above-described problems, the present invention provides an electronic device including a display unit capable of realizing touch input by a finger, touch input by a pen, or fingerprint authentication. Further, there is provided an electronic apparatus comprising: a substrate provided with a touch sensing wiring unit; a substrate including an active element for driving a plurality of display function layers such as a light emitting diode element or a liquid crystal layer; and an antenna which can transmit and receive signals and supply power in a non-contact manner and has a thin, light and small frame region.

Means for solving the problems

An electronic device according to claim 1 of the present invention includes: a display region and a frame region, the frame region being located around the display region in a plan view viewed from an observation direction; a 1 st substrate having a 1 st surface and a 2 nd surface; a 2 nd substrate having a 3 rd surface and a 4 th surface; a 3 rd substrate having a 5 th surface and a 6 th surface; and a control unit for controlling the touch sensing function, the display function, the communication function, and the non-contact charging function; a touch sensor circuit board including a 1 st substrate, a 2 nd substrate, and a 3 rd substrate, the 1 st substrate including a touch sensor function layer transmitting light in a visible light region on the 2 nd surface, the touch sensor circuit board including a touch sensor wiring unit of an electrostatic capacitance system and a 1 st antenna unit, a display function layer provided between the 2 nd surface and the 3 rd surface, the 2 nd substrate including a thin film transistor array and a 3 rd antenna unit on the 3 rd surface for driving the display function layer, the 3 rd substrate including a loop antenna, a 2 nd antenna unit, and a 4 th antenna unit on the 5 th surface for performing at least a communication function between an outside and an inside of the electronic device and a non-contact charging function of the electronic device from the outside, the 1 st antenna unit and the 2 nd antenna unit being stacked in this order when viewed from the observation direction, the 3 rd antenna element and the 4 th antenna element overlap each other in a plan view seen from the observation direction.

In the electronic device according to claim 1 of the present invention, the display function layer may be formed of a plurality of light emitting diode elements.

In the electronic device according to claim 1 of the present invention, the display function layer may be formed of a plurality of organic EL elements.

In the electronic device according to claim 1 of the present invention, the touch sensing wiring unit may include: a plurality of 1 st conductive wirings extending in parallel in a 1 st direction; an insulating layer; and a plurality of 2 nd conductive wirings laminated on the 1 st conductive wiring via the insulating layer and extending in parallel in a 2 nd direction orthogonal to the 1 st direction.

The electronic device according to claim 1 of the present invention may further include: and a light absorbing layer provided on the 1 st conductive wiring and the 2 nd conductive wiring when viewed from the observation direction.

In the electronic device according to claim 1 of the present invention, the 1 st conductive interconnection and the 2 nd conductive interconnection may have a multilayer structure including at least 2 layers of copper layers or copper alloy layers.

In the electronic device according to claim 1 of the present invention, the 1 st conductive wiring and the 2 nd conductive wiring may include: at least a copper layer or a copper alloy layer; and light absorbing layers provided on front and back sides of the 1 st conductive wiring and the 2 nd conductive wiring, respectively, when viewed from the observation direction.

In the electronic device according to claim 1 of the present invention, the 1 st antenna element, the 2 nd antenna element, the 3 rd antenna element, and the 4 th antenna element may have respective dimensions smaller than those of the loop antenna, and the 1 st antenna element, the 2 nd antenna element, the 3 rd antenna element, and the 4 th antenna element may be arranged at positions that do not overlap with the loop antenna in a plan view seen from the observation direction.

In the electronic device according to claim 1 of the present invention, the 1 st antenna unit may include 21 st loop antennas having a winding number of turns of 2 or more and winding directions opposite to each other, the 2 nd antenna unit may include 2 nd loop antennas having a winding number of turns of 2 or more and winding directions opposite to each other, one of the 21 st loop antennas and one of the 2 nd loop antennas may have the same winding direction and overlap in a plan view to transmit and receive signals related to touch sensing without contact, and the other of the 21 st loop antennas and the other of the 2 nd loop antennas may have the same winding direction and overlap in a plan view to supply and receive electric power necessary for touch sensing without contact.

In the electronic device according to claim 1 of the present invention, the 3 rd antenna unit may include 23 rd loop antennas having a winding number of turns of 2 or more and winding directions opposite to each other, the 4 th antenna unit may include 24 th loop antennas having a winding number of turns of 2 or more and winding directions opposite to each other, one of the 23 rd loop antennas and one of the 24 th loop antennas may be wound in the same direction and overlapped in a plan view to transmit and receive a signal related to driving of the display functional layer in a non-contact manner, and the other of the 23 rd loop antennas and the other of the 24 th loop antennas may be wound in the same direction and overlapped in a plan view to supply and receive electric power necessary for driving of the display functional layer in a non-contact manner.

In the electronic device according to claim 1 of the present invention, each of the 1 st antenna element and the 2 nd antenna element may be partially surrounded by a conductive pattern in a plan view, and each of the 3 rd antenna element and the 4 th antenna element may be partially surrounded by a conductive pattern in a plan view.

In the electronic device according to claim 1 of the present invention, the thin film transistors constituting the thin film transistor array may include at least a channel layer made of an oxide semiconductor.

The electronic device according to claim 2 of the present invention includes the following configuration.

[1] An electronic device is provided with:

a display region and a frame region, the frame region being located around the display region in a plan view viewed from an observation direction;

a 1 st substrate having a 1 st surface and a 2 nd surface;

a 2 nd substrate having a 3 rd surface and a 4 th surface;

a 3 rd substrate having a 5 th surface and a 6 th surface; and

a control unit that controls a touch sensing function, a display function, a communication function, and a non-contact charging function;

the 1 st substrate, the 2 nd substrate, and the 3 rd substrate are sequentially stacked when viewed from the viewing direction,

the 1 st substrate includes a touch-sensing functional layer transmitting light in a visible light region on the 2 nd surface, and includes a touch-sensing wiring unit of an electrostatic capacitance system and a 1 st antenna unit,

the thickness of the 1 st substrate and the thickness of the 3 rd substrate are respectively larger than the thickness of the 2 nd substrate,

a display function layer is provided between the 2 nd surface and the 3 rd surface,

the 2 nd substrate includes a thin film transistor array for driving the display function layer and a 3 rd antenna element on the 3 rd surface,

the 3 rd substrate includes a loop antenna, a 2 nd antenna unit, and a 4 th antenna unit on the 5 th surface, the loop antenna having at least a communication function between the outside and the inside of the electronic device and a non-contact charging function of the electronic device from the outside,

the 1 st antenna element and the 2 nd antenna element are overlapped in a plan view seen from the observation direction,

the 3 rd antenna element and the 4 th antenna element are overlapped in a plan view seen from the observation direction,

the 2 nd substrate has a conductive shield layer on the 4 th surface.

[2] According to the electronic device as recited in item [1],

the conductive shielding layer includes at least a light absorbing layer and a metal layer.

[3] According to the electronic device as recited in item [1],

the conductive shielding layer includes a heat conductive layer having a heat conductivity of 100W/(m.K) or more.

[4] According to the electronic device as recited in item [1],

the thermal conductivity of each of the 1 st substrate, the 2 nd substrate, and the 3 rd substrate is 1W/(mK) or more.

[5] According to the electronic device as recited in item [1],

the Mohs hardness of the substrates constituting the 1 st substrate and the 3 rd substrate is in the range of 6 to 10.

Effects of the invention

According to the aspect of the present invention, signals (touch sensing signals and power signals) can be transmitted and received contactlessly from the 1 st substrate to the 3 rd substrate, which is provided with the touch sensing wiring unit including the plurality of conductive wirings (the 1 st conductive wiring and the 2 nd conductive wiring), via the antenna unit. Further, signals (signals for driving the display function layer in the thin film transistor and power signals) can be transmitted and received from the 2 nd substrate provided with the thin film transistor array to and from the 3 rd substrate in a non-contact manner via the antenna unit. In addition, communication between the outside and the inside of the electronic device and supply and reception of electric power between the electronic device and an external power supply can be performed in a non-contact manner using the loop antenna provided on the 3 rd substrate.

Drawings

Fig. 1 is a block diagram showing the configuration of an electronic device according to embodiment 1 of the present invention, and is a diagram showing the positional relationship among a 1 st substrate, a 2 nd substrate, and a 3 rd substrate used in the electronic device, a touch sensor unit, a display unit, a system control unit, and the like constituting the electronic device.

Fig. 2 is a plan view of the 1 st substrate provided in the electronic device according to embodiment 1 of the present invention, as viewed from the viewing direction.

Fig. 3 is a cross-sectional view showing the structure of a 3 rd thin film transistor formed on the 2 nd surface of the 1 st substrate constituting the electronic device according to embodiment 1 of the present invention.

Fig. 4 is a partial cross-sectional view showing a touch sensor wiring unit formed on the 2 nd surface of the 1 st substrate constituting the electronic device according to embodiment 1 of the present invention.

Fig. 5 is a plan view of a 2 nd substrate provided in an electronic device according to embodiment 1 of the present invention, as viewed from a viewing direction.

Fig. 6 is a partial cross-sectional view showing the conductive shield layer formed on the 4 th surface of the 2 nd substrate constituting the electronic device according to embodiment 1 of the present invention.

Fig. 7 is a plan view of the 3 rd substrate provided in the electronic device according to embodiment 1 of the present invention, as viewed from the viewing direction.

Fig. 8 is a diagram partially showing an electronic device according to embodiment 1 of the present invention, and is a sectional view taken along line a-a' of fig. 7.

Fig. 9 is a sectional view partially showing an electronic device according to embodiment 1 of the present invention, and is an enlarged view showing a region indicated by reference numeral B in fig. 8.

Fig. 10 is an enlarged view partially showing a 2 nd substrate provided in an electronic device according to embodiment 1 of the present invention, and is a sectional view partially showing a 2 nd thin film transistor.

Fig. 11 is a cross-sectional view showing a light-emitting diode element (LED) mounted in the electronic device according to embodiment 1 of the present invention, and is an enlarged view of a region indicated by reference symbol C in fig. 10.

Fig. 12 is a partial plan view showing in an enlarged manner the 1 st antenna element formed on the 2 nd surface of the 1 st substrate constituting the electronic device according to embodiment 1 of the present invention.

Fig. 13 is an enlarged view of the 1 st antenna element formed on the 2 nd surface of the 1 st substrate constituting the electronic device according to embodiment 1 of the present invention, and is a cross-sectional view of the 1 st antenna element taken along line C-C' of fig. 12.

Fig. 14 is a perspective view showing a superposition of the 1 st antenna element formed on the 2 nd surface of the 1 st substrate and the 2 nd antenna element formed on the 3 rd surface of the 2 nd substrate constituting the electronic device according to embodiment 1 of the present invention.

Fig. 15 is an explanatory diagram for explaining generation of an eddy current when the periphery of the loop antenna is surrounded by a conductor.

Fig. 16 is an explanatory diagram for explaining the influence of the metal layer constituting the secondary battery case on the magnetic flux ring shape, and is a diagram schematically showing the deformation of the magnetic flux ring shape due to unnecessary radiation waves.

Fig. 17 is a diagram for explaining a magnetic flux loop shape in a case where a magnetic material layer is provided between a metal layer and a loop antenna.

Fig. 18 is a representative circuit diagram showing a thin film transistor that drives a light emitting diode element applied to an electronic device according to embodiment 1 of the present invention.

Fig. 19 is a cross-sectional view showing an electronic device according to embodiment 2 of the present invention, and is a view showing a structure in which an organic EL layer is used as a display functional layer.

Fig. 20 is a plan view showing a 3 rd substrate provided in an electronic device according to embodiment 2 of the present invention.

Fig. 21 is a sectional view partially showing an electronic device according to embodiment 2 of the present invention, and is an enlarged view showing a region indicated by reference numeral D in fig. 19.

Fig. 22 is an enlarged view partially showing a 2 nd substrate provided in an electronic device according to embodiment 2 of the present invention, and is a sectional view partially showing a 2 nd thin film transistor.

Detailed Description

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

In the following description, the same or substantially the same functions and components are denoted by the same reference numerals, and the description thereof will be omitted or simplified, or will be described only when necessary. In each drawing, the dimensions and ratios of the components are appropriately different from the actual conditions so that the components are illustrated in a recognizable size on the drawing. Elements which are difficult to be illustrated, for example, a configuration of a plurality of layers forming a channel layer of a semiconductor, a configuration of a plurality of layers forming a conductive layer, and the like, or a part thereof, are omitted as necessary. In order to explain the embodiments of the present invention in a simple and easy manner, the electrical circuit elements, the display functional layers, and the like may be simplified in the drawings.

In each of the embodiments described below, a description of a characteristic portion will be given, and for example, a description of a portion where there is no difference between a component used in a general electronic device and the electronic device according to the present embodiment may be omitted.

An electronic device according to an embodiment of the present invention includes: communication terminals such as smart phones, tablet terminals, notebook PCs, and the like; wearable terminals such as smart watches or smart glasses; a camera; a game machine; an information medium having a communication function such as an IC card or a memory card having a display unit. Further comprising: an electronic device such as a TV or an advertisement medium, which has a display function such as a display unit and an input function of a capacitance system. Such an electronic device is preferably equipped with a non-contact charging function from the viewpoint of portability and ease of operation.

In the following description, the wiring, the electrode, and the signal related to the touch sensing may be simply referred to as a touch sensing wiring, a touch driving wiring, a touch detection wiring, a touch electrode, and a touch signal. A voltage applied to the touch sensing wiring for touch sensing driving is referred to as a touch driving voltage. The touch sensing wiring unit is composed of a plurality of parallel 1 st conductive wirings (1 st touch wirings) and a plurality of parallel 2 nd conductive wirings (2 nd touch wirings) with an insulating layer interposed therebetween. The 1 st conductive wiring and the 2 nd conductive wiring may be referred to as only a conductive wiring or a touch wiring in the following description. For example, the drive control unit related to touch sensing may be simply referred to as a touch drive control unit. The 1 st conductive wiring and the 2 nd conductive wiring are orthogonal in a plan view.

In the following description, the "plan view" refers to a plan view in a viewing direction in which the electronic device is viewed from the viewer side. Alternatively, a view viewed from the viewer direction (the direction in which the viewer P views the electronic device) may be simply referred to as a top view.

The ordinal numbers such as "1 st", "2 nd", etc. used for the 1 st substrate, the 2 nd substrate, the 1 st wiring, the 2 nd wiring, the 3 rd wiring, etc., or the 1 st conductive metal oxide layer, the 2 nd conductive metal oxide layer, etc. are given to avoid confusion of the constituent elements, and are not limited in number. In the following description, the 1 st conductive metal oxide layer and the 2 nd conductive metal oxide layer may be simply referred to as conductive metal oxide layers.

The 1 st antenna element, the 2 nd antenna element, the 3 rd antenna element, and the 4 th antenna element included in the electronic device according to the embodiment of the present invention are generically referred to as antenna elements for short.

As the display function layer provided in the electronic device according to the embodiment of the present invention, a plurality of light Emitting diode elements called leds (light Emitting diodes), a plurality of organic EL (organic electroluminescence) elements called OLEDs, or a liquid crystal layer can be used.

An organic EL element is a display function layer using an organic material that is excited by recombination of holes injected from an anode (e.g., an upper electrode) and electrons injected from a cathode (e.g., a lower electrode or a pixel electrode) when an electric field is applied between a pair of electrodes, and emits light in units of pixels. The display functional layer in the case of organic EL contains a material having a light-emitting property (light-emitting material), and preferably contains a material having an electron-transporting property. The light-emitting layer is a layer formed between the anode and the cathode, and when a hole injection layer is formed on the lower electrode (positive electrode), a light-emitting layer is formed between the hole injection layer and the upper electrode (negative electrode). In the case where a hole transport layer is formed over the anode, a light-emitting layer is formed between the hole transport layer and the cathode. The roles of the upper and lower electrodes can be interchanged.

The LED has the same electrode structure as the organic EL element, and the LED (display function layer, light-emitting layer) is driven in the same manner as the organic EL element. The LED is formed using a single layer or a stack of compound semiconductors such as indium gallium nitride (InGaN), gallium nitride (GaN), aluminum gallium nitride (AlGaN), aluminum gallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), and gallium phosphide (GaP). As will be described later, a structure in which an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer are stacked is often used as the structure of the compound semiconductor. In the electrode structure of the LED, a structure in which a positive electrode and a negative electrode are arranged in a row on one surface of the above-described laminated structure, in other words, a horizontal light emitting diode in which these electrodes are arranged in a horizontal direction is known. Alternatively, a vertical light emitting diode is known in which an upper electrode, an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer, and a lower electrode are stacked in a direction perpendicular to the thickness. As described above, the light emitting layer of the LED is made of an inorganic material.

The substrate is not necessarily limited to a transparent substrate, and examples of substrates that can be applied to the 1 st substrate, the 2 nd substrate, and the 3 rd substrate include a glass substrate, a quartz (including artificial quartz) substrate, a sapphire substrate, a ceramic substrate, and the like. The 2 nd substrate and the 3 rd substrate may be transparent, opaque, or colored. Resin substrates such as polyimide, polyethersulfone, polyetheretherketone, polytetrafluoroethylene, polyamide, and polycarbonate can also be used.

However, as the hardness of the display surface of the electronic device in which the heavy cover glass is omitted, the hardness of the substrate in consideration of the pen input using the pen whose tip is formed of metal is required. In general, the substrate needs to have a hardness of the stylus level, for example, a hardness of 5.5 or more on the mohs scale. Since the hardness of diamond is 10, the hardness of the substrate needs to be 6 to 10.

Typical thicknesses of the cover glass are in the range of 1mm to 0.5 mm. Therefore, by setting the thickness of the 1 st substrate of the electronic device according to the embodiment of the present invention to a range of 1mm to 0.5mm, the strength equivalent to that of the cover glass can be provided to the 1 st substrate. By setting the thickness of the 3 rd substrate of the electronic device according to the embodiment of the present invention to the range of 1mm to 0.5mm as in the 1 st substrate, the strength required for the portable device can be provided to the electronic device even in a configuration in which the cover glass is omitted. By making the thickness of the 1 st substrate and the 3 rd substrate the same and making the material of the 1 st substrate and the 3 rd substrate the same, it is easy to ensure the strength required for the electronic device. The thickness of the 2 nd substrate may be thinner than those of the 1 st substrate and the 3 rd substrate from the viewpoint of weight reduction. The thickness of the 2 nd substrate can be set to a thickness of 0.4mm to 0.1mm, for example.

When the calibration in the high-definition display is taken into consideration, the linear expansion coefficients of the 1 st substrate, the 2 nd substrate, and the 3 rd substrate are preferably 10 × 10, for example^－6From/° C to 5 × 10^－6In the range/° c. By using the substrate with Mohs hardness in the range of 6-10 and the thickness in the range of 1 mm-0.5 mm as the No. 1 substrate and the No. 3 substrate, for example, cover glass can be omitted, and portable electronic equipment can be provided. The 1 st substrate and the 3 rd substrate may be thicker than 1 mm.

When considering the application of a light-emitting element such as an LED or an organic EL that requires thermal diffusion to an electronic device, the thermal conductivity κ (W/m · K) of a substrate used in the electronic device is preferably greater than 1 in order to avoid heat accumulation. Before and after the thermal conductivity of a normal glass substrate is 0.5 to 0.8W/m · K, a substrate used in the electronic device according to the embodiment of the present invention is preferably a substrate such as a tempered glass, a quartz substrate, or a sapphire glass having a thermal conductivity better than the thermal conductivity. The hardness of the tempered glass is approximately 6 to 7 in Mohs hardness, the hardness of the quartz substrate is 7 in Mohs hardness, and the hardness of the sapphire glass is 9 in Mohs hardness.

The wiring formed on the substrate used in the electronic device according to the embodiment of the present invention includes, for example, the 1 st conductive wiring, the 2 nd conductive wiring, the source wiring, the gate wiring, the power supply line, or the antenna of the driving thin film transistor, and preferably a wiring including a copper wiring or a copper alloy wiring having high thermal conductivity. In the 4 th surface of the 2 nd substrate on which the light emitting element (light emitting diode element) such as an LED or an organic EL is formed, a metal layer having good thermal conductivity or a light absorbing layer having good thermal conductivity is preferably included in the configuration of the conductive shielding layer.

(embodiment 1)

(functional constitution of electronic device)

An electronic device E1 according to embodiment 1 of the present invention will be described below with reference to fig. 1 to 18. In the electronic device E1 according to embodiment 1, a plurality of light emitting diode elements called micro LEDs are used as display function layers. For example, a display portion is formed by arranging a plurality of red light-emitting diode elements, green light-emitting diode elements, and blue light-emitting diode elements in a matrix on a thin film transistor array.

Fig. 1 is a block diagram showing an electronic device E1 according to embodiment 1 of the present invention. As shown in fig. 1, the electronic device E1 according to the present embodiment includes a touch sensing unit 10, a display unit 40, and a system control unit 30 (control unit).

(touch sensor)

The touch sensor section 10 (touch sensor function layer) includes the 1 st antenna element 110, the touch function driver 4, and the touch sensor wiring unit 5. The 1 st antenna element 110 and the touch sensing wiring element 5 are electrically connected to the touch function driving section 4. In the touch sensing section 10, the touch function driving section 4 controls a touch sensing function (for example, a touch sensing function of an electrostatic capacitance system) using the touch sensing wiring unit 5.

The 1 st antenna element 110, the touch function driving section 4, and the touch sensor wiring line 5 are disposed on the 2 nd surface 42 of the 1 st substrate 1, which will be described later. The 1 st antenna element 110 overlaps with a 2 nd antenna element 120 provided on the 3 rd substrate 3, which will be described later, in a plan view from the observer side.

(display part)

The display unit 40 is disposed between the 2 nd surface 42 of the 1 st substrate 1 and the 3 rd surface 43 of the 2 nd substrate 2 described later, and includes a display function layer 6, a display function driving unit 7, and a 3 rd antenna unit 130. The 3 rd antenna element 130 and the display function layer 6 are electrically connected to the display function driving unit 7. In the display section 40, the display function driving section 7 (thin film transistor array) controls the display function layer 6.

The display function layer 6, the display function driver 7, and the 3 rd antenna element 130 are disposed on the 3 rd surface 43 of the 2 nd substrate 2, which will be described later. As described above, the display function layer 6 is composed of a plurality of light emitting diode elements and a thin film transistor array. The 3 rd antenna element 130 overlaps the 4 th antenna element 140 provided on the 3 rd substrate 3 in a plan view from the observer side.

(System control section)

The system control unit 30 includes a cpu (central Processing unit)122, a charging control unit 123, a switching unit 125, an NFC Communication unit 126(Near Field Communication), an antenna unit 127, a 2 nd antenna unit 120 and a 4 th antenna unit 140, and a secondary battery 124. As will be described later, the secondary battery 124 is provided adjacent to the system control unit 30.

The CPU122 is electrically connected to the secondary battery 124, the 2 nd antenna unit 120, the 4 th antenna unit 140, the charge control unit 123, the switching unit 125, and the NFC communication unit 126. The charging control unit 123 and the NFC communication unit 126 are electrically connected to the switching unit 125. The antenna unit 127 is electrically connected to the charging control unit 123, the switching unit 125, and the NFC communication unit 126.

The system control unit 30 controls the touch sensing function in the touch sensing unit 10, the display function in the display unit 40, the communication function, and the non-contact charging function. The system control unit 30 transmits and receives various signals related to touch sensing in a non-contact manner via the 1 st antenna element 110 and the 2 nd antenna element 120 between the touch sensing unit 10 and the system control unit 30 as indicated by arrows denoted by reference numeral TR12, and supplies and receives electric power necessary for touch sensing in a non-contact manner. The system control unit 30 transmits and receives various signals related to driving of the display functional layer in a non-contact manner via the 3 rd antenna element 130 and the 4 th antenna element 140 between the display unit 40 and the system control unit 30 as indicated by arrows denoted by reference numeral TR34, and supplies and receives electric power necessary for driving touch sensing of the display functional layer in a non-contact manner.

As indicated by an arrow denoted by reference numeral TR56, the charging control unit 123 receives electric power supplied from an external power supply (the AC adapter 152 and the cradle 150 in fig. 1) such as 100V via the loop antenna 128 constituting the antenna unit 127. The charge control unit 123 has a rectifying function and a function of monitoring the voltage of the secondary battery 124, and supplies electric power from the charge control unit 123 to the secondary battery 124 for charging. Secondary battery 124 is provided with a temperature sensor, and when charge control unit 123 senses a temperature abnormality, charge control unit 123 stops supply and reception of electric power to secondary battery 124.

The antenna unit 127 includes a loop antenna 128, and has a function of adjusting a capacitor used for resonance, a coil length of the loop antenna 128, and the like. The switching unit 125 receives a signal from the system control unit 30, and switches between the power receiving function and the near field communication (NFC communication) function of the antenna unit 127. The loop antenna 128 performs a communication function between the outside and the inside of the electronic device E1 and a non-contact charging function of the electronic device E1 from the outside.

In the power reception by the antenna unit 127, a frequency based on the Qi standard can be adopted. For example, frequencies of 100KHz to 200KHz can be used. Alternatively, the power reception by the antenna unit 127 can be adapted to the international standard specification of wireless charging to be scheduled in the future. As the resonance frequency of the short-range communication using the antenna unit 127, for example, 13.56MHz or a frequency higher than this can be used. The NFC communication unit 126 controls the proximity communication. The NFC communication unit 126 has a modulation and demodulation function for performing near field communication.

(external Power supply)

The cradle 150 shown in fig. 1 has a function of charging the electronic device E1, a portable terminal such as a smartphone, or a wearable device according to embodiment 1 of the present invention, and functions as a power supply unit. The cradle 150 includes a plurality of power feeding antennas 151 of an electromagnetic induction system, and the electronic device E1 can receive non-contact power supply from 1 or more of the antennas 151. The cradle 150 has an antenna switching unit that selects any of the plurality of feeding-side antennas 151. The cradle 150 is connected to an external power supply such as 100V or 220V via an AC adapter 152.

(1 st base plate)

Fig. 2 is a plan view showing the 1 st substrate 1 constituting the electronic device E1. Fig. 2 is a plan view of the first substrate 1 as viewed from an observer, and shows components provided on the first substrate 1 so as to be transparent to a black matrix having light-shielding properties.

The 1 st substrate 1 is a transparent substrate having transparency for transmitting light in the visible light region, and is formed of a known material. As shown in fig. 2, the 1 st substrate 1 is provided on the 2 nd surface 42 with a black matrix BM, a 1 st conductive line 21, a 2 nd conductive line 22, a 1 st antenna unit 110, a power receiving unit 15, a power supply control unit 16, a touch drive control unit 17, a touch drive switch circuit 18, a touch sense switch circuit 19, a touch signal transmission/reception control unit 20, and a detection/AD conversion unit 25.

The black matrix BM includes a rectangular effective display region 71 and a frame region 72 (frame portion) surrounding the effective display region 71 (display region). In the example shown in fig. 2, the black matrix BM is formed on the 2 nd surface 42, but the black matrix BM may be formed as the frame region 72 on the 1 st surface 41 of the 1 st substrate 1.

The black matrix BM is not necessarily formed, and may not be formed on the 1 st substrate 1. As will be described later, the frame region 72 is a thin edge containing metal, and in this case, the formation of the black matrix BM can be omitted at the edge.

(conductive wiring)

As shown in fig. 2, the touch sensing wiring unit 5 is composed of a plurality of 1 st conductive wirings 21 extending in parallel in the X direction (1 st direction) and a plurality of 2 nd conductive wirings 22 extending in parallel in the Y direction (2 nd direction). That is, the 1 st conductive wirings 21 and the 2 nd conductive wirings 22 extend orthogonally to each other.

In the laminated structure of the touch sensing wiring unit 5, the plurality of 2 nd conductive wirings 22 are laminated on the plurality of 1 st conductive wirings 21 via the insulating layer 38 (5 th insulating layer 38, see fig. 4).

As shown by the solid line in fig. 2, the lead wiring electrically connecting the circuits such as the 1 st antenna element 110, the touch drive switch circuit 18, and the touch sense switch circuit 19 uses a part of the 1 st conductive wiring 21 and a part of the 2 nd conductive wiring 22. The power receiving unit 15, the power supply control unit 16, the touch drive control unit 17, the touch drive switch circuit 18, the touch sense switch circuit 19, the touch signal transmission/reception control unit 20, the detection/AD conversion unit 25, and the like shown in fig. 2 correspond to the touch function driving unit 4 according to embodiment 1 of the present invention.

The circuit (touch function driving section 4) controlling the touch sensing includes a part of the 1 st conductive wiring 21, a part of the 2 nd conductive wiring 22, and a plurality of the 3 rd thin film transistors. The power receiving unit 15 smoothes and stabilizes the received voltage, and outputs the smoothed and stabilized voltage to the power supply control unit 16 as a touch drive voltage. The power supply control unit 16 preferably includes a booster circuit.

In addition, a part of the 2 nd conductive wiring 22 is laminated on the 1 st conductive wiring constituting the 1 st antenna element 110 through the through hole for electrical connection and the insulating layer, that is, a wiring having a two-layer structure can be applied.

The 1 st antenna element 110 includes 2 sets of antenna pairs (1 st loop antenna) in which a pair of small-diameter loop antennas having winding directions opposite to each other and a winding number of 2 or more are provided. The antenna pair denoted by reference numeral 111 is used for transmitting and receiving signals related to touch sensing in a non-contact manner between the antenna pair 115 of the 2 nd antenna unit 120 and the antenna pair 111 of the 1 st antenna unit 110, which will be described later.

The pair of antennas indicated by reference numeral 112 is used for supply and reception of electric power necessary for non-contact touch sensing between the pair of antennas 116 and 112 of the 2 nd and 1 st antenna units 120 and 110, respectively.

The small-diameter loop antenna may be formed by spirally forming conductive wiring on the same plane, or may be a small-diameter loop antenna that can be mounted on the plane of the 1 st substrate.

Fig. 3 is a cross-sectional view showing the structure of the 3 rd thin film transistor formed on the 2 nd surface 42 of the 1 st substrate 1.

As shown in fig. 3, the 3 rd thin film transistor 153 has a bottom gate structure and is formed in the frame region 72 of the 1 st substrate 1. The 3 rd thin film transistor 153 is formed on the 2 nd surface 42 of the 1 st substrate 1 through the 4 th insulating layer 37. In the example shown in fig. 3, the black matrix BM is formed on the 2 nd surface 42 and the 4 th insulating layer 37 is formed on the black matrix BM, but the black matrix BM may not be formed on the 2 nd surface 42.

In the 3 rd thin film transistor 153, the gate electrode 155 is formed by a conductive wiring having the same configuration as the 1 st conductive wiring 21 and is formed by the same process as the 1 st conductive wiring 21. A gate insulating film (5 th insulating layer 38) is stacked on the gate electrode 155, and a channel layer 158, a drain electrode 156, and a source electrode 154 are stacked on the 5 th insulating layer 38. The drain electrode 156 and the source electrode 154 are formed by conductive wirings having the same configuration as the 2 nd conductive wiring 22, and are formed by the same process as the 2 nd conductive wiring 22. When the source electrode 154 is formed, the source wiring 157 is also formed.

The touch drive switch circuit 18, the touch sense switch circuit 19, the touch signal transmission/reception control unit 20, the detection/AD conversion unit 25, the power reception unit 15, the power supply control unit 16, the touch drive control unit 17, and other circuits shown in fig. 2 are configured by the plurality of 3 rd thin film transistors 153 and the resistive element formed by patterning a conductive metal oxide layer or a film of an oxide semiconductor. The capacitor (capacitive element) required for the 1 st antenna element 110 can be formed when the 1 st conductive wiring 21 and the 2 nd conductive wiring 22 are formed. Specifically, a capacitor can be formed by patterning a conductive layer having the same configuration and the same layer as the 1 st conductive interconnection 21 and the 2 nd conductive interconnection 22 to have a desired size above and below the 5 th insulating layer 38. The channel layer 158 constituting the 3 rd thin film transistor 153 is composed of an oxide semiconductor.

Fig. 4 is a partial sectional view showing the touch sensing wiring unit 5 formed on the 2 nd surface 42 of the 1 st substrate 1. Hereinafter, the structure of the conductive wiring will be described with reference to fig. 4.

The 1 st conductive wiring 21 has a structure in which a copper alloy layer 8B (or copper layer) is sandwiched between a 1 st conductive metal oxide layer 8A and a 2 nd conductive metal oxide layer 8C. The film thickness of each of the 1 st conductive metal oxide layer 8A and the 2 nd conductive metal oxide layer 8C can be selected from the range of 10nm to 100nm, for example. The film thickness of the copper alloy layer 8B (or copper layer) can be selected from the range of 50nm to 2000nm, for example. Alternatively, it can be formed thicker than 2000 nm. As a film forming method of these conductive metal oxide layers 8A and 8C or copper alloy layer 8B, a vacuum film forming method such as sputtering can be used. When the plating method is used together with the formation of the copper alloy layer 8B, the copper alloy layer may be formed thicker than the above-described film thickness. The 2 nd conductive wiring 22 is also the same configuration as the 1 st conductive wiring 21.

As shown in fig. 4, the 1 st conductive line 21 is sandwiched by the 1 st light-absorbing layer 23 (light-absorbing layer). Specifically, as the structure of the conductive wirings (the 1 st conductive wiring 21, the 2 nd conductive wiring 22), a structure in which a copper layer or a copper alloy layer is covered with a conductive metal oxide layer, and the conductive metal oxide layer is covered with a light absorbing layer can be employed. That is, light absorbing layers are provided on the front and back sides of the conductive wiring.

The visibility can be improved by covering the surface (front side and back side) of the conductive wiring with the light absorbing layer. The conductive metal oxide layer and the light absorbing oxide layer may be formed separately on the back surface of the copper layer or the copper alloy layer when viewed from the viewer. As the conductive metal oxide layer formed on the back surface of the copper layer or the copper alloy layer, a metal or a copper alloy layer having a high melting point and a copper alloy layer having a different composition may be used instead.

In general, copper or a copper alloy has poor adhesion to a light absorbing layer such as a glass substrate or a black matrix. In embodiment 1 of the present invention, a conductive metal oxide layer is inserted into the interface with the copper layer or the copper alloy layer. In this configuration, the conductive metal oxide layer functions as a so-called adhesive layer, and practical reliability can be provided. Further, an oxide of copper is formed on the exposed surface of the copper layer or the copper alloy layer with time, and a problem occurs in electrical mounting. By covering the surface of copper or a copper alloy with a conductive metal oxide layer, oxidation of the copper layer or the copper alloy layer can be suppressed. By forming the conductive oxide, an ohmic contact can be obtained, and advantages in electrical mounting can be obtained.

(copper alloy layer)

Next, the copper alloy layer 8B will be specifically described.

The copper alloy layer 8B contains, for example, a 1 st element that is solid-soluble in copper and a 2 nd element that is less electronegative than copper and the 1 st element. The 1 st element and the 2 nd element are elements having a specific resistance increase rate of 1 [ mu ] omega cm/at% or less when added to copper. The specific resistance of the copper alloy layer is in the range of 1.9 μ Ω cm to 6 μ Ω cm. In the present embodiment, the element that is solid-dissolved in copper means an element that can stably form a substitutional solid solution in copper in a temperature range of- (minus) 40 ℃ to + (plus) 80 ℃, which is a range applicable to use of an on-vehicle electronic device. The amount of the element(s) added to copper may be in a range such that the specific resistance (synonymous with specific resistance) of the copper alloy does not exceed 6 μ Ω cm. When the base material is copper, examples of metals having a wide solid solution range with respect to copper include gold (Au), nickel (Ni), zinc (Zn), gallium (Ga), palladium (Pd), and manganese (Mn). Aluminum (Al) is not a broad range, but has a solid solution domain to copper.

Examples of the element having a low resistivity (alloy element of copper) include palladium (Pd), magnesium (Mg), beryllium (Be), gold (Au), calcium (Ca), cadmium (Cd), zinc (Zn), and silver (Ag). When these elements are added to pure copper at 1 at%, the resistivity increases to substantially 1 μ Ω cm or less. Calcium (Ca), cadmium (Cd), zinc (Zn), and silver (Ag) are preferable as alloy elements because the increase in resistivity is 0.3 μ Ω cm/at% or less. In view of economic efficiency and environmental load, zinc and calcium are preferably used as alloying elements. Zinc and calcium can be added to 5 at% of copper as alloying elements, respectively.

The amount of calcium added may be increased, the amount of zinc added may be decreased, or the amounts of zinc and calcium added may be increased or decreased, based on the above-mentioned range of the amount of calcium added. The effects of the addition of zinc and calcium to copper are remarkably obtained when the zinc and calcium are added in amounts of 0.2 at% or more, respectively.

The resistivity of a copper alloy obtained by adding zinc and calcium to pure copper at 0.4 at% in total is about 1.9. mu. omega. cm. Therefore, the lower limit of the resistivity of the copper alloy layer 8B according to embodiment 1 of the present invention is 1.9 μ Ω cm. When calcium (Ca), cadmium (Cd), zinc (Zn), or silver (Ag) is used as an alloying element, the addition amount to copper is preferably at least 5 at% or less because the resistivity of the copper alloy increases significantly when the addition amount exceeds 5 at%.

Electronegativity is a relative measure of the intensity with which an atom (element) attracts electrons. The smaller the value of the element, the more easily the element becomes a cation. The electronegativity of copper was 1.9. The electronegativity of oxygen was 3.5. Examples of the element having a small electronegativity include alkaline earth elements, titanium group elements, chromium group elements, and the like. The electronegativity of the basic element is also small, but if the basic element or moisture is present in the vicinity of copper, the diffusion of copper increases. Therefore, alkali metals such as sodium and potassium cannot be used as the alloying elements of copper.

Calcium has a small electronegativity of 1.0. When calcium is used as an alloying element of copper, calcium is oxidized earlier than copper to form calcium oxide during heat treatment or the like, and diffusion of copper can be suppressed. In the conductive wiring according to embodiment 1 of the present invention, calcium oxide can be selectively formed on the exposed surface of the copper alloy layer not covered with the conductive metal oxide layer and the interface between the copper alloy layer and the conductive metal oxide layer. In particular, the formation of calcium oxide on the exposed surface of the copper alloy layer not covered with the conductive metal oxide layer contributes to suppression of copper diffusion and improvement of reliability. The conductivity of the conductive wiring or the copper alloy layer according to embodiment 1 of the present invention is improved by annealing such as heat treatment. The electronegativity described above is shown as the value of the electronegativity of pauling. In the conductive wiring according to embodiment 1 of the present invention, the 2 nd element is preferably oxidized earlier than copper and the 1 st element to form an oxide in a heat treatment step or the like of the conductive wiring. Further, it is preferable to prevent hydrogen and oxygen from being mixed into copper or a copper alloy.

In embodiment 1 of the present invention, a configuration is adopted in which the copper alloy layer 8B is sandwiched between the 1 st conductive metal oxide layer 8A and the 2 nd conductive metal oxide layer 8C. In this configuration, the resistivity is improved by heat treatment (annealing) in many cases. In other words, in embodiment 1 of the present invention, the copper alloy layer 8B is covered with the conductive metal oxide, so that the surface oxidation of the copper alloy layer 8B is suppressed. Further, by restricting (Anchoring) the conductive metal oxide layer formed on the surface and back surface of the copper alloy layer 8B, the crystal grains of the copper alloy layer 8B are not extremely coarsened, and the surface of the copper alloy layer 8B is not roughened. Even in the copper alloy layer 8B in which the alloy element constituting the copper alloy layer 8B is added at a low concentration (for example, around 0.2 at%), crystal grains (crystal grains) are less likely to grow large, and carrier disturbance (deterioration in resistivity) due to coarsened grain boundaries can be suppressed.

In the conductive wiring according to embodiment 1 of the present invention, by using a copper alloy containing calcium as the copper alloy layer 8B, calcium oxide may be formed at the interface between the copper alloy layer 8B and the 1 st conductive metal oxide layer 8A, the interface between the copper alloy layer 8B and the 2 nd conductive metal oxide layer 8C, and the side surface of the copper alloy layer 8B. The calcium oxide is often formed by low-temperature annealing or heat treatment described later. By forming calcium oxide on the surface of the copper alloy layer 8B and at the interface between the copper alloy layer and the conductive metal oxide layer, diffusion of copper is suppressed, which contributes to improvement of reliability.

As described above, the conductive wiring according to embodiment 1 of the present invention can be applied to the 1 st conductive wiring and the 2 nd conductive wiring of the 1 st substrate 1. Further, conductive wirings having the same configuration as the conductive wirings described above can be applied to the source wiring 66, the power supply lines 50 and 51, and the gate wiring 69 of the 2 nd substrate 2. In addition, conductive wirings having the same configuration as the above-described conductive wirings can be applied to the wirings formed on the 3 rd substrate 3, for example, the wirings as a base layer before the module such as the NFC communication section 126 is formed, and the wirings of the antenna elements. Since the wiring of the antenna element is required to have low resistance, the copper layer (or copper alloy layer) included in the conductive wiring is preferably formed thick.

(conductive Metal oxide layer)

Next, the structures of the 1 st conductive metal oxide layer 8A and the 2 nd conductive metal oxide layer 8C, and the 3 rd conductive metal oxide layer and the 4 th conductive metal oxide layer, which will be described later, will be described. Hereinafter, the 1 st to 4 th conductive metal oxide layers are simply referred to as conductive metal oxide layers.

As a material of the conductive metal oxide layer, for example, a composite oxide containing 2 or more kinds of metal oxides selected from indium oxide, zinc oxide, antimony oxide, gallium oxide, and tin oxide can be used. For example, antimony oxide can be added to the conductive metal oxide layer because antimony metal is less likely to form a solid solution domain with copper and suppresses diffusion of copper in the laminated structure. Other elements such as titanium, zirconium, magnesium, aluminum, and germanium may be added to the conductive metal oxide layer in a small amount.

The copper layer or the copper alloy layer has low adhesion to a transparent resin or a glass substrate (applied to the 1 st substrate, the 2 nd substrate, and the 3 rd substrate). Therefore, when the copper layer or the copper alloy layer is applied as it is to a display device substrate made of a transparent resin, a glass substrate, or the like, it is difficult to realize a practical display device substrate. However, the composite oxide (conductive metal oxide) has sufficient adhesion to the light absorbing resin layer, the black matrix, the transparent resin, the glass substrate, and the like, and also has sufficient adhesion to the copper layer or the copper alloy layer. Therefore, when the copper layer or the copper alloy layer using the composite oxide is applied to a display device substrate, a practical display device substrate can be realized.

In addition, copper oxide having no conductivity is formed on the surface of the copper layer or the copper alloy layer with the lapse of time, which may cause difficulty in electrical thixotropy. On the other hand, a composite oxide layer of indium oxide, zinc oxide, antimony oxide, gallium oxide, tin oxide, or the like can realize stable ohmic contact, and when such a composite oxide is used, conduction transfer (transfer) and electrical mounting via a contact hole can be easily performed.

The above-described structure of the conductive wiring is not limited to the conductive wirings 21 and 22 formed on the 1 st substrate 1, and can be applied to the conductive wiring formed on the 2 nd substrate 2 or the 3 rd substrate 3, a wiring constituting an antenna element, an electrode constituting a thin film transistor, a wiring electrically connected to the electrode, and the like.

(No. 2 substrate)

Fig. 5 is a plan view showing the 2 nd substrate 2 constituting the electronic device E1.

As shown in fig. 5, a display unit 40 is provided on the 3 rd surface 43 of the 2 nd substrate 2, and the display unit 40 includes a thin film transistor array, a light emitting element CHIP (LED CHIP, light emitting diode element), the 3 rd antenna unit 130, and the like, which are not shown. Specifically, the 3 rd surface 43 is provided with circuits such as the 3 rd antenna unit 130, the source signal switching circuit 26, the gate signal switching circuit 27, the 2 nd power receiving unit 28, the video signal receiving unit 29, and the 2 nd power supply control unit 59. The 2 nd power supply control section 59 preferably includes a booster circuit.

The source signal switching circuit 26, the gate signal switching circuit 27, the 2 nd power receiving unit 28, the video signal receiving unit 29, the 2 nd power supply control unit 59, and the like shown in fig. 5 correspond to the display function driving unit 7 according to embodiment 1 of the present invention.

The 2 nd substrate 2 is provided with a 1 st thin film transistor 67 (described later) and a 2 nd thin film transistor 68 (described later) for driving the display function layer 6 at positions corresponding to the pixel openings PX. In fig. 5, the 1 st thin film transistor 67 and the 2 nd thin film transistor 68 are not shown.

The 3 rd antenna unit 130 includes 2 antenna pairs (3 rd loop antenna) in which a pair of small-diameter loop antennas having winding directions opposite to each other and a winding number of 2 or more are provided. The antenna pair denoted by reference numeral 113 is used for transmitting and receiving signals related to driving of the display functional layer in a non-contact manner with the antenna pair 117 of the 4 th antenna element 140 described later.

The antenna pair denoted by reference numeral 114 is used to supply and receive electric power necessary for driving the display functional layer in a non-contact manner with the antenna pair 118 of the 4 th antenna element 140.

The number of turns of the small-diameter loop antenna can be selected from a range of 2 to 25, for example.

Fig. 6 illustrates a cross-sectional view of the conductive shield layer 34 disposed on the No. 4 surface 44 of the No. 2 substrate 2. In fig. 6, the conductive shield layer 34 has a structure in which a 2 nd light absorbing layer 24 (light absorbing layer), a 1 st conductive metal oxide layer 34A, a copper alloy layer 34B, and a 2 nd conductive metal oxide layer 34C are stacked in this order from a 4 th surface 44. As shown in fig. 6, by using a conductive layer (copper alloy layer 34B) having a low resistance as a part of the conductive shield layer 34, it is possible to reduce the influence of noise generated from the system control unit 30 or the loop antenna 128 on the touch sensing functional layer (the 1 st antenna element 110, the touch function driving unit 4) or the display functional layer 6.

The conductive layer of the conductive shield layer 34 may be a conductive film having an area resistance of 100 Ω/□ (Ω/sq) or less. The structure of the conductive metal oxide layer may be a laminated structure or a single-layer structure. A single layer of a metal layer or an alloy layer of molybdenum, aluminum, copper, silver, nickel, or the like, or a stacked plurality of these metal layers may be used. By adding a metal layer or an alloy layer having high thermal conductivity to the conductive shielding layer, heat diffusion associated with light emission of the light-emitting element can be facilitated.

By inserting the 2 nd light-absorbing layer 24 between the copper alloy layer 34B and the 2 nd substrate 2, the configuration of the circularly polarizing plate described in the above-mentioned patent document 6 can be omitted. The circular polarizing plate is used for the purpose of generating "black" by reflecting and absorbing external light in the pixel electrode (reflective electrode). However, the circularly polarizing plate is a relatively thick optical film of 0.1mm to 0.3 mm. If the thickness of the cover glass is added to the thickness of the circular polarizing plate, the thickness of the electronic device increases by about 1 mm. By inserting the 2 nd light absorption layer 24 without using a circular polarizing plate, "black" when the light emitting diode element is turned off can be realized. Further, the strength required for the electronic device is increased by thickening both the 1 st substrate 1 and the 3 rd substrate 3, and the cover glass is omitted by thinning the 2 nd substrate 2, so that a light and thin electronic device can be improved.

(No. 3 substrate)

Fig. 7 is a plan view showing the 3 rd substrate 3 constituting the electronic device E1.

The 3 rd substrate 3 has a 5 th surface 45 and a 6 th surface 46 (see fig. 8) opposite to the 5 th surface 45.

As shown in fig. 7, the loop antenna 128, the 2 nd antenna unit 120, the 4 th antenna unit 140, the magnetic layer 131, the secondary battery 124, the system control unit 30, and the like are provided on the 5 th surface 45 of the 3 rd substrate 3. As shown in fig. 1, the member formed on the 3 rd substrate 3 is provided between the 4 th surface 44 of the 2 nd substrate 2 and the 5 th surface 45 of the 3 rd substrate 3.

The system control unit 30 includes a CPU122, a charging control unit 123, a switching unit 125, an NFC communication unit 126, an antenna unit 127, a 2 nd antenna unit 120, a 4 th antenna unit 140, and a secondary battery 124. The CPU122 controls the touch sensing function in the touch sensing section 10, the display function in the display section 40, the communication function, and the non-contact charging function.

The 2 nd antenna unit 120 includes 2 sets of antenna pairs (2 nd loop antenna) each formed by a pair of small-diameter loop antennas having winding directions opposite to each other and winding turns of 2 or more, and specifically includes antenna pairs 115 and 116.

The 4 th antenna unit 140 includes 2 antenna pairs (4 th loop antenna) including a pair of small-diameter loop antennas having winding directions opposite to each other and a winding number of turns of 2 or more, and specifically includes antenna pairs 117 and 118.

In a plan view of the electronic device E1 configured by stacking the 1 st substrate 1, the 2 nd substrate 2, and the 3 rd substrate 3, the 2 nd antenna element 120 and the 1 st antenna element 110 are stacked, and the 4 th antenna element 140 and the 3 rd antenna element 130 are stacked.

The antenna pair 115 of the 2 nd antenna element 120 and the antenna pair 111 of the 1 st antenna element 110 are wound in the same direction and overlap each other. The antenna pair 116 of the 2 nd antenna element 120 and the antenna pair 112 of the 1 st antenna element 110 are wound in the same direction and overlap each other. The antenna pair 117 of the 4 th antenna element 140 and the antenna pair 113 of the 3 rd antenna element 130 are wound in the same direction and overlap each other. The antenna pair 118 of the 4 th antenna element 140 and the antenna pair 114 of the 3 rd antenna element 130 are wound in the same direction and overlap each other. The overlapping relationship between the 1 st antenna element 110 and the 2 nd antenna element 120, and the overlapping relationship between the 3 rd antenna element 130 and the 4 th antenna element 140 are left to be described later.

The loop antenna 128 is formed by spirally forming conductive wiring on the same plane, can be mounted on the plane of the 3 rd substrate, and preferably has a loop antenna shape that can fall within the rectangular frame region 72 as shown in fig. 7, for example. The loop antenna 128 is disposed at a position corresponding to the frame region 72 surrounding the effective display region 71. Therefore, the outer shape of the loop antenna 128 has a size slightly larger than the size of the effective display area 71 in the display section 40.

The size of each of the 1 st antenna element 110, the 2 nd antenna element 120, the 3 rd antenna element 130, and the 4 th antenna element 140 is smaller than the size of the loop antenna 128. The 1 st antenna element 110, the 2 nd antenna element 120, the 3 rd antenna element 130, and the 4 th antenna element 140 are disposed at positions that do not overlap with the loop antenna 128 in a plan view seen from the observation direction.

The number of turns of the loop antenna 128 can be set to 2 to 10, for example. In the present embodiment, the number of turns of the loop antenna shown in fig. 7 is set to 5, but the number of turns of the antenna can be selected from the range of 1 to 25, for example. The number of turns can be selected based on the selection of the resonance frequency and the setting condition of the impedance of the antenna most suitable for resonance. The loop area (Ax × Ay) of the loop antenna 128 is preferably a large area.

The capacitance of the capacitor element not shown in fig. 7 is adjusted for resonance. Specifically, during the non-contact charging, the resonance is adjusted by the charging control unit 123. In the case of NFC communication, the NFC communication unit 126 adjusts resonance. The non-contact charging and the NFC communication are performed by being switched by the switching section 125.

Examples of the secondary battery 124 include a lithium battery, a nickel-metal hydride battery, an organic radical battery, a lead battery, a lithium-air battery, a nickel-zinc battery, a nickel-cadmium battery, and a silver-zinc battery. For example, a laminated lithium battery may be formed by laminating a metal layer such as nylon or aluminum, or an exterior material such as cast polypropylene (CPP), an electrode, a separator, or an electrolyte. An all solid-state lithium battery, for example, a secondary battery such as a lithium sulfur yellow battery, is preferably applied to the secondary battery 124. In addition, it is difficult to provide the secondary battery 124 on the 2 nd surface of the 1 st substrate and the 3 rd surface of the 2 nd substrate from the viewpoint of space (thickness between substrates), and for example, a capacitor having a large capacitance can be provided. In the structure of the capacitor having a large capacitance, a thin film formed by a method such as vacuum film formation can be used.

Electronic components such as an LTE communication module, a WiFi communication module, and a GPS reception module are further disposed between the 4 th surface 44 of the 2 nd substrate 2 and the 5 th surface 45 of the 3 rd substrate 3, and may be mounted on the 4 th surface 44 or the 5 th surface 45.

Fig. 8 is a sectional view showing the electronic device E1, and is a sectional view taken along line a-a' of fig. 7. When viewed from the observer P side, the 1 st substrate 1, the 2 nd substrate 2, and the 3 rd substrate 3 are sequentially stacked. In fig. 8, the black matrix BM is omitted.

As shown in fig. 8, the loop antenna 128, the 2 nd antenna element 120, and the 4 th antenna element 140 are provided on the 5 th surface 45 of the 3 rd substrate 3. The magnetic layer 131 is provided on the 5 th surface 45 so as to cover the loop antenna 128. An opening 132 is formed in the magnetic layer 131, and the 2 nd antenna element 120 and the 4 th antenna element 140 are disposed inside the opening 132. In other words, the 2 nd antenna element 120 and the 4 th antenna element 140 are not covered by the magnetic layer 131.

System control unit 30 and secondary battery 124 are disposed on magnetic layer 131. The system control unit 30 is electrically connected to the loop antenna 128, the 2 nd antenna unit 120, and the 4 th antenna unit 140 via a through hole provided in the magnetic layer 131. The conductive shield layer 34 is provided on the upper surfaces of the secondary battery 124 and the system control unit 30, in other words, the conductive shield layer 34 is disposed between the upper surfaces of the secondary battery 124 and the system control unit 30 and the 4 th surface 44 of the 2 nd substrate 2.

The 1 st substrate 1 is provided with a touch sensor section 10 including a touch sensor wiring unit 5 on the 2 nd surface 42. A 5 th insulating layer 38 is disposed between the 1 st conductive wiring 21 and the 2 nd conductive wiring 22 constituting the touch sensor wiring unit 5 in the thickness direction (Z direction) of the 1 st substrate 1. In the step of forming the touch-sensing wiring unit 5, the 4 th insulating layer 37 may be formed on the 2 nd substrate surface before the conductive wiring (the 1 st conductive wiring 21) is formed. It is preferable to form a 6 th insulating layer 39 on the 2 nd conductive wiring 22.

Next, the structure around the light-emitting element CHIP (LED CHIP, light-emitting diode element) will be described with reference to fig. 9 to 11.

Fig. 9 is a sectional view partially showing the electronic device E1, and is an enlarged view showing an area indicated by reference numeral B in fig. 8. In fig. 9, the black matrix BM is omitted.

Fig. 10 is an enlarged view partially showing the 2 nd substrate 2 included in the electronic device E1, and is a cross-sectional view showing the light-emitting element CHIP and the 2 nd thin film transistor 68 (thin film transistor 168) provided on the 2 nd substrate 2 as their centers.

Fig. 11 is a diagram showing a light-emitting element CHIP mounted on the electronic device E1, and is a cross-sectional diagram showing the light-emitting element CHIP in an enlarged manner in the region indicated by reference numeral C in fig. 10.

(light-emitting element)

The lower electrode 88 constituting the light-emitting element CHIP is electrically interlocked with the reflective electrode 89 via the bonding layer 77. The reflective electrode 89 is connected to the 2 nd thin film transistor 68 functioning as a driving transistor for driving the light emitting element CHIP via the contact hole 93.

The light-emitting element CHIP receives power supply from the 1 st power supply line 51 via the 2 nd thin film transistor 68.

The surface layer (surface layer) of the upper electrode 87 is formed of a conductive metal oxide. The auxiliary conductor 75 and the transparent conductive film 76 are conductive layers having a structure in which copper or a copper alloy is sandwiched between conductive metal oxides, and are formed in the same layer and in the same step. In fig. 10, the auxiliary conductor 75 extends in the front-rear direction of the paper, i.e., the Y direction, for example. The auxiliary conductor 75 is connected to the 2 nd power supply line 52 (see fig. 18) extending in the X direction. The arrangement of the 1 st power line 51 and the 2 nd power line 52 in a plan view will be described below with reference to fig. 18.

The bonding layer 77 can be made of, for example, a conductive material that can electrically connect the lower electrode 88 and the reflective electrode 89 of the light-emitting element CHIP by fusion bonding in a temperature range of 150 to 340 ℃. The conductive material may be a thermally flowable resin in which a conductive filler (conductive filler) such as silver, carbon, or graphite is dispersed. Alternatively, the bonding layer 77 can be formed using In (indium), an InBi alloy, an InSb alloy, an InSn alloy, an InAg alloy, an InGa alloy, an SnBi alloy, an SnSb alloy, or the like, or a 3-or 4-membered low melting point metal of these metals.

The surface of the reflective electrode 89 can be formed of a composite oxide (conductive metal oxide) containing indium oxide, a silver alloy, or the like. The surface of the reflective electrode 89 is formed of a composite oxide containing indium oxide or a silver alloy, whereby the bonding layer 77 and the reflective electrode 89 can be electrically connected easily. Further, by reducing the ratio of the area of the reflective electrode 89 occupied by the opening, the "black color" formed by the 2 nd light absorbing layer 24 can be utilized.

Since these low-melting-point metals have good wettability with respect to the conductive metal oxide, the lower electrode 88 and the reflective electrode 89 can be welded in a self-aligned manner after rough alignment of the lower electrode 88 and the reflective electrode 89 is performed. As the energy required for welding, various energies such as heat, pressure, electromagnetic waves, laser light, or a combination of these with ultrasonic waves can be used. In addition, the vertical type light emitting diode has an advantage that maintenance is easily performed in a case where a bonding failure occurs. In the horizontal type light emitting diode in which the electrodes are arranged in the same direction, there are disadvantages that it is difficult to inspect the bonding of each diode, and the electrodes are likely to be short-circuited at the time of maintenance (replacement of defective diodes, etc.). From this viewpoint, a vertical light emitting diode is preferably used. The bonding layer 77 can be patterned by a known photolithography method or a peeling method after film formation such as vacuum film formation.

In the present embodiment, the light-emitting element CHIP is a vertical light-emitting diode that functions as a display functional layer, and is provided for each of the plurality of pixels PX.

The light-emitting element CHIP has a structure in which an upper electrode 87, an n-type semiconductor layer 90, a light-emitting layer 92, a p-type semiconductor layer 91, and a lower electrode 88 are sequentially stacked. In other words, the light-emitting element CHIP has a structure in which the p-type semiconductor layer 91, the light-emitting layer 92, the n-type semiconductor layer 90, and the upper electrode 87 are stacked in this order on the lower electrode 88. As shown in fig. 11, the electrodes used for LED light emission are formed on different surfaces, and formed on surfaces facing each other. Further, an upper electrode 87 and a lower electrode 88 are disposed outside the surfaces facing the n-type semiconductor layer 90 and the p-type semiconductor layer 91 stacked in parallel with each other. The light-emitting element CHIP having such a structure is referred to as a vertical light-emitting diode in this embodiment. In the case where the LED is configured in a special shape such as a pyramid shape in a cross-sectional view, the LED is not included in the vertical light emitting diode of the present invention. In the LED structure, a structure in which electrodes are formed in a row on one surface or a structure in which electrodes are formed in a row in a horizontal direction is called a horizontal light emitting diode.

As shown in fig. 11, in the light-emitting element CHIP, the transparent conductive film 76 is overlapped with and electrically connected to the upper electrode 87. The corner 171 of the light-emitting element CHIP is covered with the 2 nd planarizing layer 95. On the light-emitting element CHIP, an overlapping portion 74 where the 2 nd planarizing layer 95 overlaps with the upper electrode 87 is formed. Since the overlapping portions 74 are formed at both ends of the upper electrode 87, the 2 nd planarizing layer 95 has a concave shape on the upper electrode 87.

As the configuration of the transparent conductive film 76, a single layer or a plurality of layers of conductive metal oxides are used. For example, a structure in which an Ag or Ag alloy layer is sandwiched between conductive metal oxides such as ITO may be employed. Further, an auxiliary conductor 75 including a metal layer may be stacked on the transparent conductive film 76. By forming the auxiliary conductor 75 including a metal layer on the transparent conductive film 76, the resistance value of the transparent conductive film 76 can be reduced, and the diffusion of heat generated in the light-emitting element CHIP can be facilitated.

The transparent conductive film 76 is the power supply line 52 shown in fig. 18. The transparent conductive film 76 functions as a cathode or a common electrode of a light-emitting element (light-emitting diode or organic EL). In this case, the transparent conductive film 76 has an effect of suppressing the influence of the electrical noise generated from the system control unit 30 or the NFC communication unit 126 as a shield layer of the touch sensor unit 10.

For example, in fig. 11, for the purpose of reducing the risk of disconnection of the transparent conductive film 76, the 2 nd planarizing layer 9 formed on the upper electrode 87 has a tapered shape with an angle θ, and the transparent conductive film 76 is formed along the tapered surface of the 2 nd planarizing layer 95.

Specifically, the overlapping portion 74 is located between the transparent conductive film 76 and the upper electrode 87 at the corner 171, and is inclined at an angle θ of, for example, 5 ° to 70 ° with respect to the surface of the upper electrode 87. By providing the overlapping portion 74 with an inclination in this manner, disconnection of the transparent conductive film 76 can be prevented.

If the upper surface 78 (surface layer) of the light-emitting element CHIP protrudes from the 2 nd planarizing layer 95 and does not overlap with the 2 nd planarizing layer 95, that is, if the overlapping portion 74 is not formed, the transparent conductive film 76 is likely to be broken, and a lighting failure of the light-emitting element CHIP may occur.

As a method of forming the 2 nd planarizing layer 95 having the recessed portion shape as described above and a method of forming the overlapping portion 74 overlapping with the light-emitting element CHIP, known photolithography is used. In addition to the known photolithography technique, a dry etching technique or an ultraviolet cleaning technique may be applied.

The shape of the light-emitting element CHIP may be, for example, a square shape having a length of 1 side of 3 μm to 500 μm in a plan view. However, shapes other than square or rectangular may be applied. Alternatively, the size of the 1 side may be 500 μm or more. In addition, in a plan view, 1 or 2 or more light emitting elements can be mounted in the pixel PX divided by the 1 st wiring and the 2 nd wiring. In mounting the light emitting element CHIP, for example, the light emitting element CHIP in a square shape can be mounted by randomly rotating the orientation thereof by 90 degrees. By random mounting, color unevenness and brightness unevenness of the entire screen due to slight variations in the growth of the LED crystals can be reduced.

Examples of n-type semiconductors and p-type semiconductors that can be used in light-emitting elements such as LEDs include compounds of elements in groups II to VI of the periodic table, and nitrides or oxides thereof. Examples thereof include a semiconductor In which GaN is doped with In, II, or IV, a semiconductor In which GaP, GaInP, AlGaInP, or the like, and further ZnO is doped with a group II element. For example, an InGaN/GaN LED that emits light in the near ultraviolet region with high emission efficiency may be used. Alternatively, an InGaN/GaN LED having a nano-scale columnar (pilar) structure may be used in combination with a neutral beam etching technique in the bio-template technique. Further, the light-emitting layer 92 may be formed of a single compound semiconductor, or may have a single quantum well structure or a multiple quantum well structure. The light emitting element CHIP can be arranged in a matrix of red light emitting LEDs, green light emitting LEDs, and blue light emitting LEDs. Furthermore, near infrared light emitting LEDs may also be added. Alternatively, a quantum dot layer may be laminated as a wavelength conversion member on an LED light emitting element emitting monochromatic light.

Silver, silver alloy, aluminum, and aluminum alloy can be used as the constituent material of the lower electrode 88. As a configuration of the lower electrode 88, as will be described later, a configuration in which a silver or silver alloy layer is sandwiched between conductive metal oxide layers may be applied. A part of the structure of the lower electrode 88 may be provided with a metal layer including a Ti layer, a Cr layer, a Pt layer, an AuGe layer, a Pd layer, a Ni layer, a TiW layer, a Mo layer, or the like, or a multilayer structure of the above-described conductive metal oxide layers. Further, by reducing the area ratio of the lower electrode 88 in a plan view, a semi-transmissive or transmissive display device can be realized. The upper electrode 87 preferably has a structure including a layer formed of a conductive metal oxide.

As the conductive metal oxide, for example, indium oxide is used as a base material, and various composite oxides such as tin oxide, zinc oxide, gallium oxide, titanium oxide, zirconium oxide, molybdenum oxide, tungsten oxide, magnesium oxide, antimony oxide, and cerium oxide can be used, and there is an advantage that characteristics required for the upper electrode 87 can be easily adjusted. The characteristics include a work function value, light transmittance, refractive index, conductivity, etching processability, and the like. A part of the structure of the upper electrode may be provided with a metal layer including a Ti layer, a Cr layer, a Pt layer, an AuGe layer, an AuSn layer, a Pd layer, a Ni layer, a TiW layer, a Mo layer, or the like, or a multilayer structure of the conductive metal oxide layer. Since the upper surface 78 of the upper electrode 87 serves as a light exit surface, the area ratio of the transparent conductive metal oxide layer is preferably large. The upper surface 78 (surface layer) of the upper electrode 87 is a region outside the light-emitting surface of the light-emitting element CHIP, and is preferably electrically connected to the 6 th wiring having a structure in which a copper layer or a copper alloy layer is sandwiched between conductive metal oxides.

As a material of the banks 94, an organic resin such as an acrylic resin, a polyimide resin, or a novolac phenol resin can be used. The convex banks 94 are also stacked with inorganic materials such as silicon oxide and acid silicon nitride.

As the material of the 1 st planarizing layer 96 and the 2 nd planarizing layer 95, an acrylic resin, a polyimide resin, a benzocyclobutene resin, a polyamide resin, or the like can be used. Low dielectric constant materials (low-k materials) can also be used.

In order to improve visibility, any of the 1 st planarizing layer 96, the 2 nd planarizing layer 95, the sealing layer 109, or the 2 nd substrate 2 may have a function of scattering light. Alternatively, a light scattering layer may be formed above the 2 nd substrate 2.

(thin film transistor)

Fig. 10 shows an example of the structure of a Thin Film Transistor (TFT) having a top gate structure used as an active element connected to the reflective electrode 89 (pixel electrode). In fig. 10, the peripheral members such as the 1 st substrate 1 and the 3 rd substrate 3 are omitted.

The 2 nd thin film transistor 68(168) is configured to have a channel layer 58, and a source electrode 54 and a drain electrode 56 stacked on the channel layer 58. Specifically, the 2 nd thin film transistor 68 includes: a drain electrode 56 connected to one end (1 st end, left end of the channel layer 58 in fig. 10) of the channel layer 58; a source electrode 54 connected to the other end (2 nd end, right end of the channel layer 58 in fig. 10) of the channel layer 58; and a gate electrode 55 disposed to face the channel layer 58 through the 3 rd insulating layer 13. As will be described later, the channel layer 58 is made of an oxide semiconductor and is in contact with the 3 rd insulating layer 13 serving as a gate insulating layer. The 2 nd thin film transistor 68 drives the light emitting element CHIP. Details of the 1 st thin film transistor 67 and the 2 nd thin film transistor 68 are left to be described later.

Although the tapered surfaces are not formed in the cross section of the overlapping portions 31 and 32 of the channel layer 58 shown in fig. 10 and the electrode cross section shown in each of the source electrode 54, the drain electrode 56, and the gate electrode 55, it is preferable to form the tapered surfaces (inclined surfaces) for the purpose of avoiding disconnection or the like.

The source electrode 54 and the drain electrode 56 shown in fig. 10 are formed simultaneously in the same step. The source electrode 54 and the drain electrode 56 have conductive layers having the same configuration. That is, in embodiment 1, as the structures of the source electrode 54 (the 3 rd wiring) and the drain electrode 56 (the 4 th wiring), 3 layers in which a copper layer or a copper alloy layer (the 3 rd conductive layer) is sandwiched between the 1 st conductive metal oxide layer and the 2 nd conductive metal oxide layer are used. As the structure of the source electrode 54 and the drain electrode 56, a 3-layer structure of titanium/aluminum alloy/titanium, molybdenum/aluminum alloy/molybdenum, or the like can be used. Here, aluminum-neodymium is a representative alloy among aluminum alloys. From the viewpoint of thermal conductivity, a copper layer or a copper alloy layer is preferably used as the wiring material. In order to achieve electrical connection through the contact hole, it is preferable to further laminate a conductive metal oxide.

In order to stabilize the threshold voltage (Vth) of the thin film transistor or to obtain stable normally-off transistor characteristics, a back gate electrode may be provided. The back gate electrode can be formed by patterning a metal film on the opposite side of the channel layer 58, for example, at the interface between the 4 th insulating layer 47 and the 2 nd substrate 2 so as to face the gate electrode 55 shown in fig. 10. By forming the back gate electrode from a metal film, incidence of external light into the channel layer 58 can be prevented, and a stable "positive (plus)" Vth can be obtained. In addition, a negative voltage is usually applied to the back gate electrode. The channel layer 58 can be electrically surrounded by an electric field formed between the gate electrode 55 and the back gate electrode. By this electric field, the drain current of the 2 nd thin film transistor 68 can be increased, and the off current, that is, the leakage current of the 2 nd thin film transistor 68 can be further reduced. Therefore, the relative size of the 2 nd thin film transistor 68 can be set small with respect to the drain current required for the 2 nd thin film transistor 68, and the integration as a semiconductor circuit can be improved.

The 2 nd insulating layer 48 located below the gate electrode 55 may be an insulating layer having the same width as the gate electrode 55. In this case, for example, dry etching using the gate electrode 55 as a mask is performed to remove the 2 nd insulating layer 48 around the gate electrode 55. Thereby, an insulating layer having the same width as the gate electrode 55 can be formed. The technique of dry etching the insulating layer using the gate electrode 55 as a mask is generally referred to as self-alignment in a thin film transistor having a top gate structure. As shown in fig. 9 and 10, the 1 st insulating layer 49 is provided on the 2 nd insulating layer 48 so as to cover the gate electrode 55. Further, a 1 st planarizing layer 96 is provided on the 1 st insulating layer 49.

The driving of the LED by the thin film transistor including the channel layer formed of the oxide semiconductor is more preferable than the driving by the thin film transistor including the channel layer formed of the polysilicon semiconductor in terms of power consumption.

For example, an oxide semiconductor called IGZO is collectively formed by vacuum film formation such as sputtering. After the oxide semiconductor is formed, heat treatment after patterning of the TFT and the like is also performed. Thus, the deviation of the electrical characteristics (e.g., Vth) related to the channel layer is extremely small. In order to suppress variation in luminance of the LED, it is necessary to suppress variation in Vth of the thin film transistor within a small range. However, as described above, in order to ensure reliability due to crystallization, an oxide semiconductor called IGZO is often heat-treated at a temperature range of 400 ℃ to 700 ℃ (high-temperature annealing). In a manufacturing process of a liquid crystal display device or the like, interdiffusion of titanium and copper occurs during the heat treatment, and the conductivity of copper wiring is often greatly deteriorated. Among oxide semiconductors, an oxide semiconductor of a composite oxide including 2 kinds of oxides such as indium oxide and antimony oxide as a center, which can be annealed at a low temperature in a temperature range of 180 to 340 ℃, is more preferable from the viewpoint of suppressing diffusion of copper.

In addition, since the thin film transistor including the channel layer formed of an oxide semiconductor has extremely small leakage current, stability after input of a scanning signal or a video signal is high. In a thin film transistor including a channel layer formed of a polycrystalline silicon semiconductor, a leakage current is larger by 2 bits or more than that of a transistor including an oxide semiconductor. This leakage current is preferably small because it contributes to highly accurate touch sensing.

The oxide semiconductor is a composite oxide containing indium oxide and antimony oxide as main materials. An oxide semiconductor may be formed with a composition of only indium oxide and antimony oxide, but an oxide semiconductor having such a composition is likely to have oxygen defects. In order to reduce oxygen defects of the oxide semiconductor, it is preferable that zirconium oxide, hafnium oxide, scandium oxide, yttrium oxide, lanthanum oxide, cerium oxide, neodymium oxide, samarium oxide, gallium oxide, titanium oxide, and magnesium oxide be further added to the oxide semiconductor as a stabilizer of an oxidation state.

The thin film transistor shown in fig. 10 can also be applied to an electronic device according to embodiment 2 (see fig. 22) described later.

(antenna unit)

Next, the configuration of the antenna elements 110, 120, 130, and 140 constituting the electronic device E1 will be described with reference to fig. 12 to 15.

Fig. 12 is a partial plan view showing the 1 st antenna element 110 formed on the 2 nd surface 42 of the 1 st substrate 1 constituting the electronic device E1 in an enlarged manner, and is a diagram showing 1 group of loop antennas out of 2 groups of loop antennas constituting the 1 st antenna element 110.

Fig. 13 is an enlarged view of the 1 st antenna element 110 formed on the 2 nd surface 42 of the 1 st substrate 1 constituting the electronic device E1, and is a cross-sectional view of the 1 st antenna element 110 taken along the line C-C' in fig. 12.

Fig. 14 is a perspective view showing the superposition of the antenna pair of the 1 st antenna element 110 formed on the 2 nd surface 42 of the 1 st substrate 1 constituting the electronic device E1 and the antenna pair of the 2 nd antenna element 120 formed on the 3 rd surface of the 2 nd substrate.

Fig. 15 is an explanatory diagram for explaining generation of an eddy current in a case where the periphery of the small-diameter loop antenna is surrounded by a conductor.

The 1 st antenna unit 110 includes 2 antenna pairs 111 and 112. The 2 nd antenna unit 120 includes 2 antenna pairs 113 and 114. The 3 rd antenna unit 130 includes 2 antenna pairs 115 and 116. The 4 th antenna element 140 includes 2 antenna pairs 117 and 118.

In the following description, the structure of the antenna pair 111 of the 2 antenna pairs 111 and 112 constituting the 1 st antenna element 110 will be described as a representative of the 1 st antenna element 110, the 2 nd antenna element 120, the 3 rd antenna element 130, and the 4 th antenna element 140, and the same structure can be adopted for the other antenna elements.

Note that, although fig. 14 typically describes the overlapping of the pair 111 of the antenna 110 of the 1 st antenna unit 110 and the pair 115 of the 2 nd antenna unit 120, the overlapping of the pair 112 of the 1 st antenna unit 110 and the pair 116 of the 2 nd antenna unit 120 and the overlapping of the pair 113 and 114 of the 3 rd antenna unit 130 and the pair 117 and 118 of the 4 th antenna unit 140 may have the same structure. In the following description, the term "antenna element" may be simply referred to as "antenna element".

As shown in fig. 12, the antenna pair 111 is formed of a pair of small-diameter loop antennas 164 and 165 wound in turns of 2 or more and in opposite directions. The reversely wound small-diameter loop antennas 164, 165 have antenna patterns that are line-symmetric with respect to the center line 166.

The small-diameter loop antenna 164 includes the loop wiring 141 and the lead wire 143 having the same laminated structure as the conductive wiring described above. The ring wiring 141 is electrically connected to the lead line 143 via the connection pad 60.

Similarly, the small-diameter loop antenna 165 includes the loop wiring 142 and the lead wire 144 having the same laminated structure as the conductive wiring described above. The ring wiring 142 is electrically connected to the lead wire 144 via the connection pad 61.

As will be described later, in the antenna unit according to the embodiment of the present invention, the conductive pattern 148(137, 138) having a substantially U-shape is formed so as to surround the small-diameter loop antennas 164, 165.

As a structure of a conductive wiring forming an antenna, a conductive wiring composed of 3 layers in which the above-described copper alloy layer is sandwiched by a conductive metal oxide layer can be used. For example, the 1 st antenna element 110 may be formed in the same layer and in the same step as the 1 st conductive interconnection 21 (or the 2 nd conductive interconnection 22). The 3 rd antenna element 130 can be formed in the same layer and in the same step as the source wiring 66 (or the gate wiring 69). The conductive wiring may be formed of two or more layers of copper or a copper alloy and a high-melting-point metal such as titanium.

Specifically, as shown in fig. 13, in the case of the 1 st antenna element 110, the 1 st conductive wiring 21 (gate electrode 155, etc.), the loop wirings 141 and 142, and the conductive pattern 148 are simultaneously patterned on the 4 th insulating layer 37. After the 5 th insulating layer 38 is formed so as to cover the ring-shaped wirings 141 and 142, contact holes are formed at the positions of the connection pads 60 and 61. On the 5 th insulating layer 38, the 2 nd conductive wiring 22 (drain electrode 156, source electrode 154, etc.) and the lead-out lines 143, 144 are simultaneously pattern-scribed. Thus, the lead wires 143, 144 are electrically connected to the ring-shaped wirings 141, 142 via the connection pads 60, 61, respectively.

The "antenna unit" according to the embodiment of the present invention is a configuration in which at least 2 small-diameter loop antennas wound in mutually opposite directions are alternately provided adjacent to each other on the same surface for the purpose of transmission/reception of signals, reception or transmission of power, or the like. Here, the "signal" refers to a signal related to communication such as a signal related to touch sensing and a signal related to image display of the display functional layer. When an antenna structure having a loop shape (a coil-like or spiral planar pattern formed on the same plane) is employed as the antenna unit, a configuration in which 2 antennas (loop antennas) wound in mutually opposite directions are arranged adjacent to each other is preferable from the viewpoint of ensuring the stability of communication.

Alternatively, 2 or more antennas wound in opposite directions may be adjacently disposed alternately, and 1 group of antennas may be selected and used. Hereinafter, a loop antenna having a loop-shaped pattern in an antenna unit is referred to as a "small-diameter loop antenna". Therefore, the "antenna" in the "antenna unit" may be replaced with a small-diameter loop antenna. The "small diameter" of the small-diameter loop antenna is smaller than the loop antenna 128 shown in fig. 7, but the size of the loop antenna is not limited in the present invention.

Next, as shown in fig. 14, the antenna pair 111 of the 1 st antenna element 110 and the antenna pair 115 of the 2 nd antenna element 120 are overlapped with each other so that the positions of the small-diameter loop antennas 164A and 164B having the same winding direction are aligned and overlapped with each other and the positions of the small-diameter loop antennas 165A and 165B having the same winding direction are aligned and overlapped with each other (overlapping portion 170).

In the overlapping portion 170, the line width of the conductive wiring forming the antenna is required to be, for example, a thin line width of 1 μm to 500 μm, and the antenna unit is required to be accommodated in the narrow frame region 72, and therefore, the positional accuracy of the antenna is preferably within ± 3 μm. If the accuracy of the alignment is high, the signals can be efficiently transmitted or received. By connecting 2 or more small-diameter loop antennas in parallel, the antenna can be made smaller, lower in impedance, and higher in speed of noncontact data transmission. In fig. 12 to 14, illustration of capacitors and other components for forming the resonant circuit between the 1 st antenna element 110 and the 2 nd antenna element 120 and the resonant circuit between the 3 rd antenna element 130 and the 4 th antenna element 140 is omitted.

The 1 st antenna element 110, the 2 nd antenna element 120, the 3 rd antenna element 130, and the 4 th antenna element 140 are each formed of an antenna pair including a pair of small-diameter loop antennas wound in opposite directions. The direction of magnetic field generation of the reversely wound small-diameter loop antenna is opposite to that of the magnetic field generation, so that stable transmission and reception with less noise generation can be realized. In other words, in the 2 small-diameter loop antennas wound in opposite directions, the magnetic fields formed in different directions from each other obtain an external magnetic field shielding effect, and the influence of external noise can be reduced. In the antenna unit shown in fig. 12, the small-diameter loop antennas 164 and 165 wound in opposite directions have antenna patterns that are line-symmetric with respect to the center line 166, and therefore, noise of an external magnetic field can be cancelled out, and the shielding effect can be increased.

The number of turns of the loop antenna or the small-diameter loop antenna is preferably 2 or more, or 3 or more. For example, when the outer shape of the antenna is small in size such as 10mm or less, the number of turns can be set to 3 to 20. The number of windings in embodiment 1 is 3. Here, the planar shape of the loop antenna having a winding number of 2 or more is a curve that approaches the center with the rotation on the same plane. A spiral of almost equally spaced archimedes between wires can typically be exemplified. The shape of the loop antenna is synonymous with a planar-mountable helical antenna described later.

In general, a loop antenna represented by RFID requires the following 3 points in order to obtain a long communication distance.

(a) Increasing the number of winding turns;

(b) for example, the antenna diameter length of the card size is ensured on the premise of the frequency of 13.56MHz and the like;

(c) ensuring the conductivity of the conductive wiring; and so on.

Here, the antenna radial length is based on an average value of a major axis and a minor axis when the antenna is viewed in a plan view. On the other hand, the communication distance of the small-diameter loop antenna according to the embodiment of the present invention may be set in consideration of the thickness of the sealing layer used for the organic EL layer, the thickness of the liquid crystal layer, or the thickness of the glass substrate. For example, the distance may be a short distance of about 1 μm to 10000 μm, and thus the above-mentioned limitation is almost eliminated. In other words, the communication distance of the small-diameter loop antenna according to the embodiment of the present invention is not limited to that of a general RFID, and may be a short distance of about 1 μm to 10000 μm, so that the influence of noise on a driver circuit such as a display function layer can be minimized. The small-diameter loop antenna according to the embodiment of the present invention has a small remote radiation intensity and is hardly restricted by the law of the resonance frequency of a general antenna.

In the loop antenna or the small-diameter loop antenna, a plurality of 2 or more antennas (loop antennas or small-diameter loop antennas) having different winding directions may be alternately arranged in parallel on the same plane. The plurality of antennas are connected in parallel, so that the impedance of the antenna can be reduced.

The resonance frequency of the small-diameter loop antenna according to the embodiment of the present invention can be selected as a frequency suitable for touch sensing, for example, n times (n is an integer of 1 or more) the touch sensing drive frequency.

On the other hand, in order to reduce the influence of noise received from a driver circuit of a display functional layer or the like, an external power supply of 100V or 220V, or the like, it is preferable that the small-diameter loop antennas 164 and 165 be planarly surrounded by conductive patterns 137 and 138 having a substantially U-shape as shown in fig. 12 or 14. The small-diameter loop antennas 164 and 165 wound in opposite directions may be referred to as an antenna pair.

When the conductive pattern has an electrically closed shape W (electrically connected shape) as shown in fig. 15, for example, a current E flows in the conductive pattern in a direction opposite to the direction of the current flowing in the small-diameter loop antenna, which leads to a decrease in the efficiency of the small-diameter loop antenna. Therefore, as the shape of the conductive patterns 137 and 138, it is preferable that the antenna or the pair of antennas is not surrounded by a ring-shaped conductive pattern, but the periphery of the pair of antennas (the pair of small-diameter ring antennas) is partially surrounded by a substantially U-shaped conductive pattern. The conductive patterns 137, 138 may also be grounded to a case or the like of the display device.

As described above, the conductive patterns 137 and 138 are preferably configured such that the copper layer or the copper alloy layer is sandwiched between the 1 st conductive metal oxide layer and the 2 nd conductive metal oxide layer.

As the conductive patterns 137 and 138, a metal having good thermal conductivity can be used, and a diffusion effect (function of a heat sink) of heat generated in the small-diameter loop antenna can be given.

For example, the small-diameter loop antennas 164 and 165 may be a pair of antennas that are wound in opposite directions in a plan view. The reverse winding can be defined as a winding direction in which the small-diameter loop antennas 164 and 165 arranged vertically (or arranged horizontally) as shown in fig. 12 are line-symmetric with respect to the center line 166 in a plan view. When power (or a signal) is applied to 2 small-diameter loop antennas which are adjacent to each other and have different winding directions, magnetic fields in opposite directions are formed. In other words, currents in opposite rotational directions flow in 2 small-diameter loop antennas adjacent to each other and having different winding directions. The number of antenna pairs (number of sets) formed by 2 small-diameter loop antennas wound in opposite directions is not limited to 1 set, and a plurality of antenna pairs may be provided in one antenna unit. For example, the impedance of the antenna unit can be reduced by arranging the antennas wound in opposite directions alternately and electrically in parallel.

At the overlapping portion 170, which is the overlapping portion of the antenna pair 111 of the 1 st antenna element 110 and the antenna pair 115 of the 2 nd antenna element 120, for example, reception of a touch drive signal output from the system control portion 30 or transmission of a touch detection signal output from the touch sensing switch circuit 19 to the system control portion 30 via the touch signal transmission/reception control portion 20 is performed. The touch drive signal drives the touch drive switch circuit 18 via the touch drive control section 17. In other words, the overlapping portion 170 of the antenna pair 111 of the 1 st antenna unit 110 and the antenna pair 115 of the 2 nd antenna unit 120 has a function of transmitting and receiving the touch sensing signal.

At the overlapping portion (overlapping portion) of the antenna pair 112 of the 1 st antenna unit 110 and the antenna pair 116 of the 2 nd antenna unit 120, for example, electric power supplied from the secondary battery 124 via the system control unit 30 is received. In other words, the overlapping portion of the antenna pair 111 of the 1 st antenna unit 110 and the antenna pair 115 of the 2 nd antenna unit 120 has functions of supplying and receiving a power signal.

Further, the action of one antenna pair of the 1 st antenna element 110 and the action of one antenna pair of the 2 nd antenna element 120 on the overlapping portion, and the action of the other antenna pair of the 1 st antenna element 110 and the overlapping portion of the other antenna pair of the 2 nd antenna element 120 on the overlapping portion can be interchanged. Note that the capacitor for resonance is not shown.

The electronic device E1 according to embodiment 1 of the present invention can transmit and receive signals related to touch sensing, supply and receive power necessary for touch sensing, and transmit and receive signals related to driving of a display functional layer and supply and receive power necessary for driving the display functional layer in a non-contact manner using the antenna unit.

In addition, by using the loop antenna 128 provided on the 3 rd substrate 3, communication with the outside of the electronic device E1 and power feeding from an external power supply to the electronic device E1 can be performed.

Therefore, the conventional mounting structure using FPC (flexible printed circuit board) can be omitted from the 1 st substrate, the 2 nd substrate, and the 3 rd substrate, respectively. In addition, as a display device, the width of the frame region 72 can be reduced, and the assembly of the electronic apparatus can be extremely simplified.

(magnetic layer)

As shown in fig. 7 and 8, the magnetic layer 131 is provided on the 5 th surface 45. For example, when a metal layer laminated on a package (secondary battery case) of a lithium battery or the like as the secondary battery 124 is disposed in the vicinity of the loop antenna 128, the magnetic layer 131 can be used for the purpose of improving the antenna efficiency.

Fig. 16 is an explanatory diagram of a case where the metal layer 134 is disposed at a position facing the loop antenna 128, and schematically illustrates a deformation of the loop of the magnetic flux formed by the unnecessary radiation wave.

When the cradle 150 as a charging stand and a reader/writer for RF-ID are operated and a magnetic field (magnetic flux loop) is formed in the loop antenna 128, an eddy current is generated in the metal layer 134 in a direction canceling the magnetic field, and a simultaneous counter magnetic field is formed. Thus, the magnetic beam loop of the loop antenna 128 is deformed, resulting in a decrease in the efficiency of the antenna. The metal layer 134 shown in fig. 16 is, for example, a metal package laminated with resin such as a lithium battery, or a conductive layer of a solid lithium battery.

Fig. 17 is a diagram for explaining a magnetic flux loop shape in a case where the magnetic layer 131 is disposed between the metal layer 134 and the loop antenna 128.

As shown in fig. 17, by interposing the magnetic layer 131 between the metal layer 134 and the loop antenna 128, a loop shape of the magnetic flux is secured, and the antenna efficiency can be improved.

As a structure and a material applicable to the magnetic layer 131, for example, a sheet obtained by dispersing or orienting a material such as Ni — Zn ferrite, Mn — Zn ferrite, an Fe — Si based amorphous material, or an Fe — Ni based permalloy in a synthetic resin, rubber, or the like, is processed into a desired shape. Alternatively, an amorphous film made of the above-described material may be formed on the surface of the 5 th surface 45 by a vacuum film forming method. The magnetic layer formed of the amorphous film can be suitably used as an all solid-state electronic device when the secondary battery is applied to a solid-state lithium battery or the like.

(Driving of light emitting diode element)

Fig. 18 is a typical circuit diagram for driving a light-emitting diode element using a thin film transistor. In embodiment 1 of the present invention, an LED or an organic EL is exemplified as the light emitting diode element. The plurality of pixels PX are arranged in a matrix. Hereinafter, the pixel PX may be referred to as a pixel opening PX.

Fig. 18 schematically shows a plurality of pixels PX, each of which is a pixel opening PX defined by a source wiring 66 serving as a signal line for video and a gate wiring 69 serving as a scanning line. The 1 st conductive wiring 21 extends in the X direction in parallel with the gate wiring 69.

The source wiring 66 extends in the Y direction in parallel with the 2 nd conductive wiring 22. In a plan view, for example, the source wiring 66 is parallel to the 2 nd conductive wiring 22, and the 1 st conductive wiring 21 overlaps the gate wiring 69. The 2 nd thin film transistor 68 is connected to the 1 st power supply line 51 via the source electrode 54. The 1 st power supply line 51 is a power supply line for supplying power to the light emitting element 86. The 2 nd power supply line 52 is connected to an upper electrode 87 constituting a light emitting element 86 (light emitting diode element) via the transparent conductive film 76 and the auxiliary conductor 75. The 2 nd power supply line 52 is maintained at a constant potential, for example, grounded to the ground (a case or the like). The 1 st conductive interconnection 21 and the 2 nd conductive interconnection 22 may be oriented at a 90-degree difference. The auxiliary conductor 75 can be formed at a position overlapping with the 1 st conductive line 21 or the 2 nd conductive line 22 in a plan view, avoiding the pixel opening (pixel PX) using a metal wiring having good conductivity. The auxiliary conductor 75 shown in fig. 9 is a laminated structure of a conductive metal oxide, a copper alloy, and a conductive metal oxide. By using copper or a copper alloy having high thermal conductivity as a part of the structure of the auxiliary conductor 75, it is possible to contribute to heat diffusion of the light emitting diode element and obtain stable light emission.

As shown in fig. 18, in a pixel PX (pixel opening) defined by the source wiring 66 and the gate wiring 69, a 1 st thin film transistor 67, a 2 nd thin film transistor 68, a light-emitting element 86 (corresponding to the light-emitting element CHIP), a capacitor 79, and the like are arranged.

The 1 st thin film transistor 67 is electrically connected to the source wiring 66 and the gate wiring 69. The 2 nd thin film transistor 68 is electrically connected to the 1 st thin film transistor 67 and the 1 st power line 51, and drives the light emitting element 86, which is a vertical light emitting diode, in response to a signal from the 1 st thin film transistor 67. In this embodiment, the 1 st thin film transistor 67 and the 2 nd thin film transistor 68 are sometimes referred to as thin film transistors 168. The thin film transistors 168 constitute a thin film transistor array.

Fig. 18 shows main electrical components disposed on the 2 nd surface 43 of the 2 nd substrate 2 including the 1 st power line 51. A plurality of pixels PX arranged in a matrix form an effective display region 71. In addition to the thin film transistors 67 and 68 shown in fig. 18, a reset signal line or the like may be formed on the 2 nd surface 43 of the 2 nd substrate 2 by using a thin film transistor or the like for performing a capacitance reset process as a switching element. The light emitting element 86 is the vertical type light emitting diode described above.

The gate wiring 69 is connected to a scan driving circuit 82 (gate signal switching circuit, display function driving section 7) including a shift register, and the source wiring 66 is connected to a source signal switching circuit including a shift register, a video line, and an analog switch. The source signal circuit 81 and the scan driver circuit 82 receive a signal from the display controller and control the light-emitting element 86 as a display function layer.

In the present embodiment, the 1 st power supply line 51 and the source wiring 66 extend in the Y direction (2 nd direction) and are parallel to the 2 nd conductive wiring 22. The gate wiring 69 extends in the X direction (1 st direction) and is parallel to the 1 st conductive wiring 21.

In the embodiment of the present invention, the positional relationship among the 1 st conductive interconnection 21, the 2 nd conductive interconnection 22, the source interconnection 66, the gate interconnection 69, and the power supply interconnection is not limited.

For example, the power supply line 51 and the source wiring 66 may be parallel to the 1 st conductive wiring 21. The orientation of the pattern of the transparent conductive film may be changed according to the number of thin film transistors in one pixel or the orientation of the auxiliary conductor 75.

In each of the plurality of pixels PX, when the 1 st thin film transistor 67 is turned on by receiving a gate signal from the gate wiring 69 and a video signal from the source wiring 66, a signal to turn on is input to the gate electrode 55 of the 2 nd thin film transistor 68 that supplies power to the pixel. A current is supplied from the 1 st power supply line 51 to the light emitting element 86 through the channel layer 58 of the 2 nd thin film transistor 68, and the pixel PX (light emitting element 86) emits light in accordance with the amount of the current.

Further, a signal (output from the drain electrode) from the 1 st thin film transistor 67 as a switching transistor is output to the gate electrode 55 formed by a contact hole and a 4 th conductive layer (not shown). The 2 nd thin film transistor 68 as a driving transistor receives a signal from the gate electrode 55, supplies power from the 1 st power line 51 to the light emitting element 86, and the light emitting element 86 emits light in accordance with the amount of the current.

(modification of embodiment 1)

In the above embodiment, a configuration in which a plurality of red light-emitting LEDs, green light-emitting LEDs, and blue light-emitting LEDs are arranged in a matrix as the light-emitting element CHIP has been described. The present invention is not limited to the configuration of embodiment 1 described above. For example, the following modifications can be adopted.

As the light emitting element CHIP, a blue light emitting diode or a cyan light emitting diode is disposed on the 2 nd substrate 2. After a blue light emitting diode or a cyan light emitting diode is arranged, a green phosphor is stacked on a green pixel, and a red phosphor is stacked on a red light emitting pixel. This enables the inorganic LED to be easily formed on the 2 nd substrate 2. When such a phosphor is used, green light emission and red light emission can be obtained from the green phosphor and the red phosphor, respectively, by excitation by light generated from the bluish-purple light-emitting diode.

As the light emitting element CHIP, an ultraviolet light emitting diode may be disposed on the 2 nd substrate 2. Further, a blue phosphor is stacked on a blue pixel, a green phosphor is stacked on a green pixel, and a red phosphor is stacked on a red pixel. When such a phosphor is used, for example, a green pixel, a red pixel, or a blue pixel can be formed by a simple method such as a printing method. In these pixels, it is preferable to adjust the size of the pixel, or the number or area of the light-emitting elements CHIP arranged in one pixel, from the viewpoint of the light-emission efficiency of each color and the color balance.

In general, in a manufacturing process using a sapphire substrate or the like, the LED element may have an emission peak wavelength that is not uniform due to variations in the sapphire substrate surface. Further, there may be variations in light emission such as variations in the peak wavelength of light emission and subtle deviations in the crystal axis depending on the production lot. The variation in crystal axis or crystal growth may cause a bias in light emitted from the light-emitting layer of the light-emitting element, and may cause a bias in viewing angle characteristics as a display device. In order to make such variations uniform, a plurality of light-emitting elements of the same color may be provided in one pixel.

In the inspection of the 2 nd substrate 2 in which the light-emitting elements CHIP are arranged in a matrix, the 2 nd substrate 2 can be irradiated with light emitted from a near ultraviolet light-emitting LED, a violet light-emitting LED, or a blue light-emitting LED as a light source, and light can be emitted by excitation of the LED (light-emitting element CHIP). If necessary, a λ converter may be incorporated in the light source in advance, and excitation light emitted from each of the red light-emitting LED, the green light-emitting LED, and the blue light-emitting LED as the light-emitting elements CHIP may be observed and used for inspection of a defective CHIP. In the inspection using excitation light emission, appearance inspection such as defective or defective light emission of the light-emitting element CHIP can be performed.

(formation of circuits based on thin film transistors)

In the above-described embodiments, the resistance element can be formed by forming the conductive metal oxide layer or the oxide semiconductor film into a desired pattern. After a matrix of thin film transistors (active elements) having a polysilicon semiconductor as a channel layer is formed on the 2 nd substrate 2, a through hole is formed in the insulating layer, and a matrix of thin film transistors (active elements) using an oxide semiconductor as the channel layer can be stacked via the through hole. In the 2-layer structure in which the matrix of the thin film transistor using the oxide semiconductor is further stacked on the matrix of the thin film transistor using the polycrystalline silicon semiconductor as the channel layer, for example, a layer of the gate wiring or the gate electrode of the polycrystalline silicon thin film transistor and wiring layers of the source wiring, the source electrode, and the drain electrode of the oxide semiconductor thin film transistor can be patterned separately in the same layer and the same structure using the same material.

An inverter circuit or an SRAM can be configured by a known technique using a resistance element or an n-type thin film transistor. Similarly, a ROM circuit, a NAND circuit, a NOR circuit, a flip-flop, a shift register, and other logic circuits can be configured. Since the oxide semiconductor has extremely small leakage current, a circuit with low power consumption can be formed. Further, since the memory (voltage holding property) which the silicon semiconductor does not have is provided, a good memory element can be provided. Alternatively, the memory and the logic circuit may be formed on the 2 nd substrate 2 in a stacked structure in which a matrix of active elements including a polysilicon semiconductor as a channel layer is formed as the 1 st layer and a matrix of active elements including an oxide semiconductor as a channel layer is formed as the 2 nd layer. The channel layer may be formed of a polycrystalline silicon semiconductor or an amorphous silicon semiconductor as necessary.

By the above-described technique, a circuit including a switching element can be formed on the 2 nd surface of the 1 st substrate 1 or the 3 rd surface of the 2 nd substrate 2.

(embodiment 2)

Hereinafter, embodiment 2 of the present invention will be described with reference to the drawings.

In embodiment 2, the same members as those in embodiment 1 are given the same reference numerals, and the description thereof will be omitted or simplified.

Fig. 19 is a sectional view showing an electronic device E2 according to embodiment 2 of the present invention.

Fig. 20 is a plan view showing a 3 rd substrate provided in the electronic device E2.

Fig. 21 is a sectional view partially showing the electronic device E2, is an enlarged view showing a region indicated by reference numeral D in fig. 19, and is a view along the X direction. In fig. 21, the black matrix BM is omitted.

Fig. 22 is an enlarged view partially showing a 2 nd substrate included in the electronic device E2, and is a sectional view partially showing a 2 nd thin film transistor, and is a view along the X direction.

The electronic device E2 has a display unit including an organic EL. Specifically, in the electronic device E2, the organic EL light emitting layer is formed as the display function layer 6 in the pixel opening 97 located between the plurality of banks 94. In fig. 19, illustration of the 3 rd substrate 3, the loop antenna attached to the 3 rd substrate 3, the secondary battery, and the like is omitted. In embodiment 2, circuits such as the touch sensor section 10 provided on the 2 nd surface 42 of the 1 st substrate 1 and the touch drive switch circuit 18 for driving the touch sensor section are the same as those in embodiment 1. In embodiment 2, circuits such as the gate signal switching circuit 27 provided on the 3 rd surface 43 of the 2 nd substrate 2 are the same as those in embodiment 1, and will not be described in detail.

The touch function driving unit 4 is provided on the 2 nd surface 42 of the 1 st substrate 1, and the display function layer 6 as an organic EL is provided on the 3 rd surface 43 of the 2 nd substrate 2. The No. 3 substrate 3 includes a loop antenna 128, a magnetic layer 131, a secondary battery 124, a system control unit 30, and the like on the No. 5 surface 45. The thin film transistor 168 (1 st thin film transistor 67 and 2 nd thin film transistor 68) will be described later with reference to fig. 18 and 22.

In the electronic device E2 shown in fig. 19, an edge 107 made of a cushioning material such as metal or resin is provided. The edge is intended to prevent a corner or the like of the substrate from being chipped or damaged. Fig. 20 shows the arrangement of the loop antenna 128, the secondary battery 124, and the magnetic layer 131 in a plan view. Unlike embodiment 1, in embodiment 2, the 2 nd antenna element 120 and the 4 th antenna element 140 are disposed outside the loop antenna 128.

The conductive pattern 248 of the antenna unit according to embodiment 2 has a pattern obtained by rotating the arrangement of the conductive pattern 148 of embodiment 1 by 180 °. Specifically, in embodiment 2, the conductor portions extending in the Y direction (conductor portions connecting the ends of the 2 conductor portions extending in the X direction) in the U-shaped conductive pattern are located near the loop antenna 128.

This results in a structure in which a conductive pattern is arranged between the small-diameter loop antenna 164(165) and the loop antenna 128. By adopting such a configuration, the influence of the loop antenna 128 on the conductive wiring constituting the antenna unit can be reduced.

As shown in fig. 19 and 20, the magnetic layer 131 is provided on the 5 th surface 45 so as to cover the loop antenna 128. For example, when the metal layer 134 laminated on a package (secondary battery case) of a lithium battery or the like as the secondary battery 124 is disposed in the vicinity of the loop antenna 128, the magnetic layer 131 can be used for the purpose of improving the antenna efficiency. An opening 132 is formed in the magnetic layer 131, and the 2 nd antenna element 120 and the 4 th antenna element 140 are disposed inside the opening 132. In other words, the 2 nd antenna element 120 and the 4 th antenna element 140 are not covered by the magnetic layer 131. On magnetic layer 131, secondary battery 124 and system control unit 30 are provided.

The loop antenna 128, the 2 nd antenna element 120, and the 4 th antenna element 140 are electrically connected to the system control unit 30 through contact holes, jumpers, and the like (not shown). Similarly to embodiment 1, the small-diameter loop antennas of the 1 st antenna element 110 and the 2 nd antenna element 120 overlap each other in a plan view, and the small-diameter loop antennas of the 2 nd antenna element 120 and the 4 th antenna element 140 overlap each other in a plan view.

As shown in fig. 20, the 3 rd substrate 3 may be provided with an opening G and may be provided with a CMOS camera or the like. As shown in fig. 21, an electronic device E2 is an organic EL (organic electroluminescence) display device in which a 1 st substrate 1 and a 2 nd substrate 2 are bonded to each other with an adhesive layer 108 of a transparent resin interposed therebetween.

As shown in fig. 22, a thin film transistor 168 and a display function layer 6 are provided on the 2 nd substrate 2. The display function layer 6 is an organic EL including the light-emitting layer 92, the hole injection layer 191, and the like, and the thin film transistor 168 drives the light-emitting layer 92 as an active element.

As described above, the electronic device E2 according to the embodiment of the present invention can transmit and receive signals related to touch sensing and supply and receive electric power necessary for touch sensing between the 1 st substrate 1 and the 3 rd substrate 3 via the antenna unit in a non-contact manner. Further, transmission/reception of signals related to driving of the display function layer and supply and reception of electric power necessary for driving of the display function layer can be performed in a non-contact manner between the 2 nd substrate 2 and the 3 rd substrate 3 provided with the thin film transistor array via the antenna unit.

In addition, communication with the outside of the electronic device E2 and power feeding from an external power supply to the electronic device E2 can be performed using the loop antenna 128 provided on the 3 rd substrate 3.

Conventionally, in the electrical connection between the 1 st substrate 1 and the 3 rd substrate 3 and the electrical connection between the 2 nd substrate 2 and the 3 rd substrate 3, troublesome mounting using an FPC connector has been performed. In contrast, the electronic device E2 has not only a function of transmitting and receiving signals in the non-contact system and a function of supplying and receiving power in the non-contact system, but also a sealing structure in the frame region 72 as a whole, that is, a sealing structure realized by forming only the sealing portion 36, and thus the structure of the electronic device E2 can be extremely simplified. Further, by the edge in the frame region 72, an effect of easily achieving mounting between the substrates can be obtained. Since the overall sealing configuration can be achieved, a high level of waterproofness is obtained. A photocurable or thermosetting resin or the like can be used as the sealant of the sealing portion 36.

The loop antennas according to embodiment 1 and embodiment 2 may be arranged so that loop antennas having different winding directions (reverse winding) are adjacent to each other with a size larger than that of the small-diameter loop antenna.

The electronic device according to the above-described embodiment does not exclude the use of cover glass or circularly polarizing plate, and these members may be used in an electronic device.

The display device according to the above-described embodiment can be applied to various applications. Examples of electronic devices to which the display device according to the above-described embodiment can be applied include a mobile phone, a portable game machine, a portable information terminal, a personal computer, an electronic book, a video camera, a digital streaming camera, a head mounted display, a navigation system, an acoustic reproduction device (e.g., a car audio system, a digital audio player, etc.), a copier, a facsimile machine, a printer complex machine, an Automatic Teller Machine (ATM), a personal authentication device, and an optical communication device. The above embodiments can be freely combined and used.

The preferred embodiments of the present invention have been described, and the above description is only an example of the present invention and should not be construed as limiting. Additions, omissions, substitutions, and other modifications can be made without departing from the scope of the present invention. Accordingly, the invention is not to be seen as limited by the foregoing description, but is only limited by the scope of the appended claims.

Description of reference numerals

1 st substrate

2 nd substrate

3 rd substrate

4 touch function driving unit

5 touch sensing wiring unit

6 display functional layer

7 display function driving unit

8A 1 st conductive Metal oxide layer (conductive Metal oxide layer)

8B copper alloy layer

8C 2 nd conductive metal oxide layer (conductive metal oxide layer)

10 touch sensing part

13 rd 3 insulating layer

15 electric power receiving part

16 power supply control unit

17 touch drive control unit

18 touch drive switch circuit

19 touch sensing switch circuit

20 touch signal receiving and transmitting control part

21 st 1 conductive wiring (conductive wiring)

22 nd 2 nd conductive wiring (conductive wiring)

23 No. 1 light absorption layer (light absorption layer)

24 nd 2 nd light absorption layer (light absorption layer)

25 detection/AD conversion unit

26 source signal switch circuit

27 grid signal switch circuit

28 nd 2 nd power receiving part

29 video signal receiving part

30 system control part

31. 32 overlap portion

34 conductive shield layer

34A No. 1 conductive Metal oxide layer (conductive Metal oxide layer)

34B copper alloy layer

34C No. 2 conductive Metal oxide layer (conductive Metal oxide layer)

36 sealing part

37 th insulating layer

38 th 5 insulating layer (insulating layer)

39 th 6 insulating layer

40 display part

41 No. 1

42 nd face 2

43 No. 3

44 th surface

45 th surface (5 th surface)

46 th surface 6

47 th insulating layer

48 nd 2 nd insulating layer

49 1 st insulating layer

50. 51 Power cord

51 power line 1 (power line)

52 nd power cord (Power cord)

54 source electrode

55 gate electrode

56 drain electrode

58 channel layer

59 nd 2 nd power supply control part

60. 61 gasket for connection

66 source wiring

67 th 1 thin film transistor (thin film transistor)

68 nd 2 nd thin film transistor (thin film transistor)

69 Gate Wiring

71 effective display area

72 frame area (frame)

74 overlap portion

75 auxiliary conductor

76 transparent conductive film

77 bonding layers

78 upper surface

79 capacitive element

81 source signal circuit

82 scan driving circuit

86 light emitting element

87 upper electrode

88 lower electrode

89 reflective electrode

90 n-type semiconductor layer

91 p-type semiconductor layer

92 light emitting layer

93 contact hole

94 convex dike

95 No. 2 planarization layer

96 No. 1 planarization layer

97 pixel opening

108 adhesive layer

109 sealing layer

110 th 1 antenna unit (antenna unit)

111. 112, 113, 114, 115, 116, 117, 118 antenna pair

120 nd 2 nd antenna unit (antenna unit)

123 charging control part

124 secondary battery

125 switching part

126 NFC communication unit

127 antenna part

128 loop antenna

130 rd 3 antenna unit (antenna unit)

131 magnetic layer

132 opening part

134 metal layer

137. 138, 148, 248 conductive patterns

140 th antenna unit (antenna unit)

141. 142 ring wiring

143. 144 lead-out wire

150 bracket

151 side antenna (aerial) for power supply

152 adapter

153 rd thin film transistor

154 source electrode

155 gate electrode

156 drain electrode

157 source wiring

158 channel layer

164. 164A, 164B, 165A, 165B minor diameter loop antenna

166 center line

168 thin film transistor

170 overlap portion

171 corner

191 hole injection layer

E1, E2 electronic equipment

G opening part

PX pixel opening part (pixel)