阅读说明：本技术 利用半导体发光元件的显示装置 (Display device using semiconductor light emitting element ) 是由 张永鹤 郑锡球 于 2018-02-06 设计创作，主要内容包括：本发明涉及一种显示装置,尤其涉及一种利用半导体发光元件的显示装置。根据本发明的显示装置包括：基板,包括电极；多个半导体发光元件,组装在所述基板；以及颜色转换部,层叠于所述半导体发光元件以转换颜色。详细地,所述颜色转换部包括：多孔层、波长转换层以及反射层,所述波长转换层配置在所述多孔层与所述反射层之间,所述多孔层能够由能够电解抛光(Electro Polishing)的多孔材料形成。此外,本发明的特征在于,所述反射层的表面具有第一区域和由所述第一区域包围的第二区域,所述第二区域的表面粗糙度大于所述第一区域的表面粗糙度,在所述第二区域中配置有多个第一凸起。(The present invention relates to a display device, and more particularly, to a display device using a semiconductor light emitting element. The display device according to the present invention includes: a substrate including an electrode; a plurality of semiconductor light emitting elements assembled on the substrate; and a color conversion portion laminated on the semiconductor light emitting element to convert a color. In detail, the color conversion section includes: the light-emitting device includes a porous layer, a wavelength conversion layer, and a reflective layer, the wavelength conversion layer being disposed between the porous layer and the reflective layer, and the porous layer may be formed of a porous material capable of being electropolished (Electro polising). In addition, the present invention is characterized in that the surface of the reflective layer has a first region and a second region surrounded by the first region, the second region has a surface roughness greater than that of the first region, and a plurality of first protrusions are arranged in the second region.)

1. A display device, comprising:

a substrate including an electrode;

a plurality of semiconductor light emitting elements assembled on the substrate; and

a color conversion section laminated on the semiconductor light emitting element to convert a color,

the color conversion section includes:

a porous layer;

a wavelength conversion layer; and

a reflective layer, which is disposed on the substrate,

the wavelength conversion layer is disposed between the porous layer and the reflective layer, the porous layer is formed of a porous material capable of being electropolished,

the surface of the reflective layer has:

a first region; and

a second region surrounded by the first region,

the surface roughness of the second region is greater than the surface roughness of the first region, and a plurality of first protrusions are arranged in the second region.

2. The display device according to claim 1,

the upper face of the first protrusion is a flat cutting surface.

3. The display device according to claim 1,

the surface of the porous layer has:

a first region; and

a second region surrounded by the first region,

the surface roughness of the second region is greater than the surface roughness of the first region, and a plurality of second protrusions are further arranged in the second region.

4. The display device according to claim 3,

the upper face of the second protrusion is a flat cutting surface.

5. The display device according to claim 1,

the reflective layer comprises a plurality of layers,

at least one of the plurality of layers of the reflective layer is a layer comprising a III-V compound.

6. The display device according to claim 1,

an adhesive member is provided between the porous layer of the color conversion portion and one surface of the semiconductor light emitting element to physically bond the color conversion portion and the semiconductor light emitting element.

7. The display device according to claim 6,

the adhesive member is formed of a transparent material to transmit light emitted from the semiconductor light emitting element.

8. The display device according to claim 1,

the semiconductor light emitting element includes:

a first conductivity type electrode;

a second conductivity type electrode;

a first conductive semiconductor layer on which the first conductive electrode is disposed;

a second conductive type semiconductor layer overlapping with the first conductive type semiconductor layer and provided with the second conductive type electrode; and

an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer,

the second conductive type semiconductor layer includes:

a first layer formed of a porous material capable of being electropolished and disposed on an outer layer of the semiconductor light emitting element;

a second layer which is disposed below the first layer and has an impurity concentration lower than that of the first layer; and

and a third layer which is disposed between the second layer and the active layer and has an impurity concentration higher than that of the second layer.

9. The display device according to claim 8,

a reflective electrode is further included between the first conductive type electrode and the first conductive type semiconductor layer.

10. The display device according to claim 8,

the surface of the first layer has:

a first region; and

a second region surrounded by the first region,

the second region has a surface roughness greater than that of the first region, and a plurality of third protrusions are arranged in the second region.

11. The display device according to claim 10,

the third bump is formed of a second conductivity type semiconductor and has an impurity concentration higher than that of the first layer.

Technical Field

The present invention relates to a display device, and more particularly, to a display device using a semiconductor light emitting element.

Background

Recently, in the field of display technology, display devices that are thin and have excellent characteristics such as flexibility have been developed. In contrast, currently commercialized displays are mainly represented by LCDs (liquid Crystal displays) and AMOLEDs (Active Matrix Organic Light Emitting Diodes).

However, the LCD has a problem that response time is not fast and flexibility is difficult to achieve, and the AMOLED has a disadvantage that a lifetime is short and mass production efficiency is not good.

On the other hand, a Light Emitting Diode (LED) is a well-known semiconductor Light Emitting element for converting current into Light, and a red LED using GaAsP (gallium arsenide phosphide) compound semiconductor has been commercialized in 1962, and is used as a Light source for a display image in an electronic device such as an information communication device together with a GaP N-based green LED. Therefore, a display can be realized using the semiconductor light emitting element, and thus a method for solving the above-described problems can be provided.

With the development of display devices, there may be a necessity that the pixel integration degree or the pixel density should be improved. In particular, as the pixel integration degree or the pixel density increases, the size of the semiconductor light emitting element and the pitch between pixels become narrower, and thus it may be difficult to realize the color of the display device. Accordingly, the present invention provides a display device structure capable of realizing colors in a display device having a high pixel integration or pixel density, a small size of semiconductor light emitting elements, and a narrow pitch between pixels.

Disclosure of Invention

Problems to be solved by the invention

An object of the present invention is to provide a structure for realizing colors in a display device having a high pixel integration or pixel density, a small size of a semiconductor light emitting element, and a narrow pitch between pixels, and a method for manufacturing the display device.

In addition, another object of the present invention is to improve color conversion efficiency in a display device.

Technical scheme for solving problems

The display device according to the present invention includes: a substrate including an electrode; a plurality of semiconductor light emitting elements mounted on the substrate; and a color conversion portion laminated on the semiconductor light emitting element to convert a color. In detail, the color conversion part includes a porous layer, a wavelength conversion layer, and a reflective layer, the wavelength conversion layer is disposed between the porous layer and the reflective layer, and the porous layer may be formed of a porous material capable of electropolishing (Electro polising). In addition, the present invention is characterized in that the surface of the reflective layer has a first region and a second region surrounded by the first region, the second region has a surface roughness greater than that of the first region, and a plurality of first protrusions are arranged in the second region.

In an embodiment, the upper face of the first protrusion is a flat cutting surface.

In an embodiment, the surface of the porous layer has a first region and a second region surrounded by the first region, the second region having a surface roughness greater than that of the first region, and a plurality of second protrusions are further arranged in the second region.

In an embodiment, the upper face of the second protrusion is a flat cutting surface.

In an embodiment, the reflective layer comprises a plurality of layers, at least one of the plurality of layers of the reflective layer being a layer comprising a III-V compound.

In an embodiment, an adhesive member is provided between the porous layer of the color conversion portion and one surface of the semiconductor light emitting element to form a physical bond between the color conversion portion and the semiconductor light emitting element.

In an embodiment, the adhesive member is formed of a transparent material to allow light emitted from the semiconductor light emitting element to pass therethrough.

In an embodiment, the semiconductor light emitting element includes a first conductive type electrode, a second conductive type electrode, a first conductive type semiconductor layer in which the first conductive type electrode is disposed, a second conductive type semiconductor layer overlapping the first conductive type semiconductor layer and in which the second conductive type electrode is disposed, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. In detail, it is characterized in that the second conductivity type semiconductor layer includes: a first layer formed of a porous material capable of electrolytic Polishing (Electro Polishing) and disposed on an outer layer of the semiconductor light emitting element; a second layer disposed below the first layer and having a lower impurity concentration than the first layer; and a third layer which is provided between the second layer and the active layer and has a higher impurity concentration than the second layer.

In an embodiment, a reflective electrode is further included between the first conductive type electrode and the first conductive type semiconductor layer.

In an embodiment, the surface of the first layer has a first region and a second region surrounded by the first region, the second region having a surface roughness greater than the first region, and a plurality of third protrusions are arranged in the second region.

In an embodiment, the third bump is formed of a second conductivity type semiconductor and has a higher impurity concentration than the first layer.

Effects of the invention

In the display device according to the present invention including the color conversion section laminated on the semiconductor light emitting element to convert color, the color conversion section has a porous layer formed of a porous material capable of electropolishing (Electro polising), whereby the color conversion section having a thin thickness can be provided. Therefore, a display device which can realize colors in a display device having a high pixel integration or pixel density, a small size of semiconductor light emitting elements, and a narrow pitch between pixels can be provided.

In addition, in the present invention, since the reflective layer is provided in the color conversion section, it is possible to prevent light that is not converted in the wavelength conversion layer of the color conversion section from being emitted from among the light sources emitted from the semiconductor light emitting elements, thereby preventing the unconverted light from being mixed with the light that has been converted in the wavelength conversion layer, so that it is possible to maximize the color conversion efficiency.

In addition, in the present invention, since the reflective electrode is provided between the first conductivity type electrode and the first conductivity type semiconductor layer in the semiconductor light emitting element, the light source emitted from the semiconductor light emitting element can be utilized in the color conversion portion without loss, and the color conversion efficiency can be maximized.

Drawings

Fig. 1 is a conceptual diagram showing an embodiment of a display device using a semiconductor light emitting element of the present invention.

Fig. 2 is a partially enlarged view of a portion a of fig. 1, and fig. 3a and 3B are cross-sectional views taken along lines B-B and C-C of fig. 2, respectively.

Fig. 4 is a conceptual diagram illustrating the flip-chip semiconductor light-emitting element of fig. 3.

Fig. 5a to 5c are conceptual views showing various forms for realizing colors in relation to the flip-chip type semiconductor light emitting element.

Fig. 6 is a cross-sectional view showing a method for manufacturing a display device using a semiconductor light emitting element according to the present invention.

Fig. 7 is a perspective view showing another embodiment of a display device using a semiconductor light emitting element of the present invention.

Fig. 8 is a sectional view taken along line D-D of fig. 7.

Fig. 9 is a conceptual diagram illustrating the vertical semiconductor light emitting device of fig. 8.

Fig. 10 is an enlarged view of a portion a of fig. 1 for explaining another embodiment of the present invention to which the new structure is applied.

Fig. 11 is a sectional view taken along line E-E of fig. 10.

Fig. 12a is a conceptual diagram of the red color conversion section of fig. 11.

Fig. 12b is a perspective view of the red color conversion part of fig. 11.

Fig. 12c is a perspective view seen from the bottom surface of the red color conversion section of fig. 11.

Fig. 13a is a conceptual diagram illustrating the flip-chip semiconductor light-emitting element of fig. 11.

Fig. 13b is a perspective view showing the flip-chip semiconductor light emitting element of fig. 11.

Fig. 14a is a schematic diagram showing color conversion in the red color conversion section of fig. 11.

Fig. 14b is a schematic diagram showing color conversion in the green color conversion section of fig. 11.

Fig. 15 is a sectional view for explaining another embodiment of a display device to which the new structure is applied.

Fig. 16 is a sectional view for explaining still another embodiment of a display device to which the new structure is applied.

Fig. 17 is an enlarged view of a portion a of fig. 1 for explaining still another embodiment of a display device to which the new structure is applied.

Fig. 18 is a sectional view showing a method of manufacturing a color conversion portion according to the present invention.

Detailed Description

Hereinafter, embodiments disclosed in the present specification will be described in detail with reference to the drawings, and the same or similar components will be denoted by the same reference numerals regardless of the numbers of the drawings, and redundant description thereof will be omitted. The suffixes "module" and "section" of the constituent elements used in the following description are given or mixed for the convenience of writing the description, and do not have mutually different meanings or actions by themselves. In describing the embodiments of the present disclosure, detailed descriptions of related well-known technologies will be omitted when it is determined that the detailed descriptions of the related well-known technologies may obscure the gist of the embodiments of the present disclosure. Further, it should be noted that the drawings are only for easy understanding of the embodiments disclosed in the present specification and are not to be construed as limiting the technical ideas disclosed in the present specification to the drawings.

In addition, it will be understood that when an element such as a layer, region or substrate is referred to as being "on" other structural elements, it can be directly on the other elements or intervening elements may also be present therebetween.

The display device described in this specification may include a portable phone, a smart phone (smart phone), a notebook computer (laptop computer), a digital broadcasting terminal, a PDA (personal digital assistants), a PMP (portable multimedia player), a navigation, a Tablet PC (Slate PC), a Tablet PC (Tablet PC), an Ultra Book (Ultra Book), a digital television, a desktop computer, and the like. However, according to the structure of the embodiments described in this specification, even a new product type to be developed later can be applied to a display device capable of displaying, which is obvious to those skilled in the art.

Fig. 1 is a conceptual diagram showing an embodiment of a display device using a semiconductor light emitting element of the present invention.

According to the drawings, information processed in the control part of the display device 100 may be displayed using a flexible display (flexiplexe).

Flexible displays include displays that can be bent, twisted, folded, or rolled by an external force. For example, the flexible display may be a display fabricated on a thin flexible substrate that maintains the display characteristics of existing flat panel displays and is capable of bending, folding, or curling like paper.

In the non-curved state of the flexible display (e.g. a state with an infinite radius of curvature, hereinafter referred to as the first state), the display area of the flexible display becomes planar. In a state of being bent from the first state by an external force (for example, a state having a limited radius of curvature, hereinafter referred to as a second state), the display region may be a curved surface. As shown in the figure, the information displayed in the second state may become visual information output on a curved surface. Such visual information can be achieved by independently controlling the light emission of unit pixels (sub-pixels) arranged in a matrix form. The unit pixel refers to a minimum unit for realizing one color.

The unit pixel of the flexible display may be implemented by a semiconductor light emitting element. In the present invention, as one type of semiconductor Light Emitting element that converts current into Light, a Light Emitting Diode (LED) is exemplified. The light emitting diode is formed in a small size, and thus can function as a unit pixel even in the second state.

Hereinafter, a flexible display implemented by using the light emitting diode will be described in further detail with reference to the accompanying drawings.

Fig. 2 is a partially enlarged view of a portion a in fig. 1, fig. 3a and 3B are cross-sectional views taken along lines B-B and C-C of fig. 2, respectively, fig. 4 is a conceptual view illustrating the flip-chip type semiconductor light emitting element of fig. 3a, and fig. 5a to 5C are conceptual views illustrating various forms for realizing colors in relation to the flip-chip type semiconductor light emitting element.

As the display device 100 using semiconductor light emitting elements, the display device 100 using Passive Matrix (PM) semiconductor light emitting elements is illustrated in fig. 2, 3a, and 3 b. However, the examples described below can also be applied to Active Matrix (AM) semiconductor light emitting elements.

The display device 100 includes a substrate 110, a first electrode 120, a conductive adhesive layer 130, a second electrode 140, and a plurality of semiconductor light emitting elements 150.

The substrate 110 may be a flexible substrate. For example, the substrate 110 may include glass or Polyimide (PI) to implement a flexible display device. Any material may be used as long as it has insulating properties and flexibility, such as PEN (Polyethylene naphthalate) and PET (Polyethylene Terephthalate). In addition, the substrate 110 may be any one of a transparent material and an opaque material.

The substrate 110 may be a circuit substrate configured with the first electrode 120, and thus the first electrode 120 may be located on the substrate 110.

According to the drawings, the insulating layer 160 may be disposed on the substrate 110 where the first electrode 120 is located, and the auxiliary electrode 170 may be located on the insulating layer 160. In this case, the insulating layer 160 may be stacked on the substrate 110 to form a single circuit substrate. More specifically, the insulating layer 160 may be made of a material having insulation and flexibility, such as Polyimide (PI), PET, PEN, or the like, and may be integrally formed with the substrate 110, thereby forming a single substrate.

The auxiliary electrode 170 is an electrode electrically connecting the first electrode 120 and the semiconductor light emitting element 150, and the auxiliary electrode 170 is located on the insulating layer 160 and is disposed corresponding to the position of the first electrode 120. For example, the auxiliary electrode 170 may be in a dot shape and may be electrically connected to the first electrode 120 through an electrode hole 171 penetrating the insulating layer 160. The electrode hole 171 may be formed by filling a conductive material into the via hole.

Referring to the present drawing, the conductive adhesive layer 130 is formed on one surface of the insulating layer 160, but the present invention is not necessarily limited thereto. For example, a layer that performs a specific function may be formed between the insulating layer 160 and the conductive adhesive layer 130, or the conductive adhesive layer 130 may be disposed on the substrate 110 without the insulating layer 160. In the structure in which the conductive adhesive layer 130 is disposed on the substrate 110, the conductive adhesive layer 130 may function as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity, and for this purpose, a substance having conductivity and a substance having adhesiveness may be mixed in the conductive adhesive layer 130. In addition, the conductive adhesive layer 130 has flexibility, and thus, the display device may implement a flexible function.

In this instance, the conductive adhesive layer 130 may be an Anisotropic Conductive Film (ACF), an anisotropic conductive paste (paste), a solution (solution) containing conductive particles, or the like. The conductive adhesive layer 130 may be configured as a layer that allows electrical interconnection in the Z direction through its thickness, but has electrical insulation in the horizontal X-Y direction. Accordingly, the conductive adhesive layer 130 may be named a Z-axis conductive layer (however, hereinafter, referred to as a "conductive adhesive layer").

The anisotropic conductive film is a film in which an anisotropic conductive medium (anisotropic conductive medium) is mixed in an insulating base member, and when heat and pressure are applied, only a specific portion is conductive by the anisotropic conductive medium. Hereinafter, a case where heat and pressure are applied to the anisotropic conductive film will be described, but other methods may be used to make the anisotropic conductive film partially conductive. Such a method may be, for example, applying only either one of the heat and pressure or UV curing, or the like.

Also, the anisotropic conductive medium may be, for example, conductive balls or conductive particles. According to the drawings, in the present example, the anisotropic conductive film is a film in which conductive balls are mixed into an insulating base member, and when heat and pressure are applied, only a specific portion has conductivity due to the conductive balls. The anisotropic conductive film may be in a state of containing a plurality of particles, the core of the conductive material in each particle being covered with an insulating film of a polymer material, in which case a portion of the insulating film to which heat and pressure are applied is broken, thereby obtaining conductivity by means of the core. At this time, the shape of the core is deformed to be formed into layers contacting each other in the thickness direction of the film. As a more specific example, heat and pressure are applied to the entire anisotropic conductive film, and electrical connection in the Z-axis direction is partially formed using a difference in height of objects bonded through the anisotropic conductive film.

As another example, the anisotropic conductive film may be in a state of containing a plurality of particles, and the insulating core in each particle is covered with a conductive material. In this case, a portion of the conductive material to which heat and pressure are applied is deformed (pressed to be in close contact therewith), so that the portion has conductivity in the thickness direction of the film. As another example, the conductive material may penetrate the insulating base member in the Z-axis direction and be conductive in the thickness direction of the film. In this case, the conductive material may have a sharp end.

According to the drawings, the anisotropic conductive film may be a fixed array Anisotropic Conductive Film (ACF) configured in such a manner that conductive balls are inserted into one surface of an insulating base member. More specifically, an insulating base member is formed of a material having adhesiveness, conductive balls are arranged concentratedly at the bottom of the insulating base member, and when heat and pressure are applied to the base member, the base member is deformed together with the conductive balls to have conductivity in the vertical direction.

However, the present invention is not necessarily limited thereto, and the anisotropic conductive film may be formed in a form in which conductive balls are randomly mixed in the insulating base member, a form in which the anisotropic conductive film is formed of a plurality of layers and the conductive balls are arranged on any one layer (double-ACF), or the like.

The anisotropic conductive paste is a combination of paste and conductive balls, and may be a paste in which conductive balls are mixed with a base material having insulating and adhesive properties. Also, the solution containing the conductive particles may be a solution containing the form of conductive particles (particles) or nano (nano) particles.

Referring again to the drawings, the second electrode 140 is located on the insulating layer 160 and spaced apart from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 where the auxiliary electrode 170 and the second electrode 140 are disposed.

The conductive adhesive layer 130 is formed in a state where the auxiliary electrode 170 and the second electrode 140 are positioned on the insulating layer 160, and then the semiconductor light emitting element 150 electrically connects the first electrode 120 and the second electrode 140 when heat and pressure are applied to the semiconductor light emitting element 150 to be connected in a flip chip form.

Referring to fig. 4, the semiconductor light emitting element may be a flip chip type (flip chip type) light emitting element.

For example, the semiconductor light emitting element includes: a p-type electrode 156, a p-type semiconductor layer 155 forming the p-type electrode 156, an active layer 154 formed on the p-type semiconductor layer 155, an n-type semiconductor layer 153 formed on the active layer 154, and an n-type electrode 152 disposed on the n-type semiconductor layer 153 so as to be spaced apart from the p-type electrode 156 in a horizontal direction. In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 using the conductive adhesive layer 130, and the n-type electrode 152 may be electrically connected to the second electrode 140.

Referring again to fig. 2, 3a, and 3b, the auxiliary electrode 170 is formed long in one direction, and one auxiliary electrode may be electrically connected to the plurality of semiconductor light emitting elements 150. For example, the p-type electrodes of the left and right semiconductor light emitting elements centered on the auxiliary electrode may be electrically connected to one auxiliary electrode.

More specifically, the semiconductor light emitting element 150 is pressed into the conductive adhesive layer 130 by heat and pressure, whereby only a portion between the p-type electrode 156 and the auxiliary electrode 170 of the semiconductor light emitting element 150 and a portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting element 150 have conductivity, and the remaining portion has no conductivity due to the absence of the press-fitting of the semiconductor light emitting element. As described above, the conductive adhesive layer 130 bonds the semiconductor light emitting element 150 and the auxiliary electrode 170 and the semiconductor light emitting element 150 and the second electrode 140 to each other, and forms electrical connections.

In addition, the plurality of semiconductor light emitting elements 150 may constitute a light emitting element array (array), and the phosphor layer 180 is formed in the light emitting element array.

The light emitting element array may include a plurality of semiconductor light emitting elements themselves having different luminance values. Each semiconductor light emitting element 150 constitutes a unit pixel, and is electrically connected to the first electrode 120. For example, the first electrode 120 may be plural, the plurality of semiconductor light emitting elements may be arranged in several columns, for example, and the semiconductor light emitting elements in each column may be electrically connected to any one of the plurality of first electrodes.

In addition, since the plurality of semiconductor light emitting elements are connected in the form of a flip chip, a plurality of semiconductor light emitting elements grown on a transparent dielectric substrate can be utilized. In addition, the semiconductor light emitting element may be, for example, a nitride semiconductor light emitting element. The semiconductor light emitting element 150 has excellent luminance, so that a single unit pixel can be constituted even if the size is small.

According to the drawing, partition walls 190 may be formed between the semiconductor light emitting elements 150. In this case, the partition wall 190 may function to separate the respective unit pixels from each other, and may be integrally formed with the conductive adhesive layer 130. For example, when the semiconductor light emitting element 150 is inserted into the anisotropic conductive film, the base member of the anisotropic conductive film may form the partition wall.

In addition, when the base member of the anisotropic conductive film is black, the partition wall 190 can increase the contrast (contrast) while having a reflection characteristic even without other black insulators.

As another example, a reflective partition wall may be provided separately from the partition wall 190. In this case, the partition wall 190 may include a Black (Black) or White (White) insulator according to the purpose of the display device. When the partition wall of a white insulator is used, an effect of improving reflectivity can be obtained, and when the partition wall of a black insulator is used, contrast (contrast) can be increased while having a reflection characteristic.

The phosphor layer 180 may be positioned on an outer surface of the semiconductor light emitting element 150. For example, the semiconductor light emitting element 150 is a blue semiconductor light emitting element that emits blue B light, and the phosphor layer 180 performs a function of converting the blue B light into a color of a unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting a single pixel.

That is, a red phosphor 181 capable of converting blue light into red R light may be stacked on the blue semiconductor light emitting element 151 at a position constituting a red unit pixel, and a green phosphor 182 capable of converting blue light into green G light may be stacked on the blue semiconductor light emitting element 151 at a position constituting a green unit pixel. In addition, only the blue semiconductor light emitting element 151 may be used alone in a portion constituting a unit pixel of blue. In this case, the unit pixels of red R, green G, and blue B may constitute one pixel. More specifically, phosphors of one color may be stacked along the respective lines of the first electrode 120. Thus, one line in the first electrodes 120 may be an electrode for controlling one color. That is, the unit pixel can be realized by sequentially arranging the red R, the green G, and the blue B along the second electrode 140.

However, the present invention is not necessarily limited thereto, and the unit pixels of red R, green G, and blue B may be implemented by combining the semiconductor light emitting element 150 and the quantum dots QD instead of the phosphor.

In addition, the black matrix 191 may be disposed between the respective phosphor layers to improve contrast (contrast). That is, such a black matrix 191 may improve the contrast of luminance.

However, the present invention is not limited thereto, and other structures for realizing blue, red, and green colors may be applied.

Referring to fig. 5a, each of the semiconductor light emitting elements 150 is mainly gallium nitride (GaN) and simultaneously indium (In) and/or aluminum (Al) are added, thereby being implemented as a high power light emitting element emitting various lights such as blue.

In this case, the semiconductor light emitting elements 150 may be red, green, and blue semiconductor light emitting elements to constitute respective unit pixels (sub-pixels). For example, a full-color display can be realized by alternately arranging Red R, Green G, and Blue B semiconductor light emitting elements, and forming one pixel (pixel) by Red (Red), Green (Green), and Blue (Blue) unit pixels using the Red, Green, and Blue semiconductor light emitting elements.

Referring to fig. 5b, the semiconductor light emitting element may have a white light emitting element W provided with a yellow phosphor layer at each element. In this case, the red phosphor layer 181, the green phosphor layer 182, and the blue phosphor layer 183 may be disposed on the white light emitting element W to constitute a unit pixel. A unit pixel may be formed by a color filter in which red, green, and blue colors are repeated on the white light emitting element W.

Referring to fig. 5c, the ultraviolet radiation element UV may be provided with a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183. As described above, the semiconductor light emitting element can be used over the entire region of visible light and ultraviolet light UV, and can be extended to a form of a semiconductor light emitting element that can use ultraviolet light UV as an excitation source (excitation) of the upper phosphor.

Again observing the present example, the semiconductor light emitting element 150 is located on the conductive adhesive layer 130, thereby constituting a unit pixel in the display device. The semiconductor light emitting element 150 has excellent luminance, so that a single unit pixel can be constituted even if the size is small. The length of one side of the size of such a single semiconductor light emitting element 150 may be 80 μm or less, and may be a rectangular or square element. In the case of a rectangle, the size may be 20 × 80 μm or less.

In addition, even if a square semiconductor light emitting element 150 having a side of 10 μm is used for a unit pixel, sufficient luminance will be displayed to realize a display device. Therefore, when a rectangular pixel in which one side of the size of a unit pixel is 600 μm and the other side is 300 μm is taken as an example, the distance of the semiconductor light emitting element becomes relatively large enough. Therefore, in this case, a flexible display device having HD picture quality can be realized.

A display device using the semiconductor light emitting element as described above can be manufactured by a novel manufacturing method. The manufacturing method will be described below with reference to fig. 6.

Fig. 6 is a cross-sectional view showing a method for manufacturing a display device using a semiconductor light emitting element according to the present invention.

Referring to this drawing, first, the conductive adhesive layer 130 is formed on the insulating layer 160 where the auxiliary electrode 170 and the second electrode 140 are located. The insulating layer 160 is laminated on the first substrate 110 to form one substrate (or a circuit substrate) on which the first electrode 120, the auxiliary electrode 170, and the second electrode 140 are disposed. In this case, the first electrode 120 and the second electrode 140 may be arranged in directions orthogonal to each other. Also, the first substrate 110 and the insulating layer 160 may each include glass or Polyimide (PI) to implement a flexible display device.

The conductive adhesive layer 130 may be implemented by, for example, an anisotropic conductive film, and for this purpose, the substrate on which the insulating layer 160 is disposed may be coated with the anisotropic conductive film.

Then, the second substrate 112 on which the plurality of semiconductor light emitting elements 150 corresponding to the positions of the auxiliary electrode 170 and the second electrode 140 and constituting a single pixel are disposed so that the semiconductor light emitting elements 150 face the auxiliary electrode 170 and the second electrode 140.

In this case, the second substrate 112 may be a sapphire (sphere) substrate or a silicon (silicon) substrate as a growth substrate for growing the semiconductor light emitting element 150.

When the semiconductor light emitting element is formed in a wafer (wafer) unit, it has an interval and a size that can constitute a display device, and thus can be effectively used for the display device.

Next, the circuit substrate and the second substrate 112 are thermocompressed. For example, an ACF head (ACFpress head) may be applied to thermally compress the circuit substrate and the second substrate 112 to each other. The circuit substrate and the second substrate 112 are bonded (bonding) to each other using the thermal compression. According to the characteristics of the anisotropic conductive film having conductivity by thermal compression, only the portions between the semiconductor light emitting element 150 and the auxiliary electrode 170 and between the semiconductor light emitting element 150 and the second electrode 140 have conductivity, and thus, the plurality of electrodes and the semiconductor light emitting element 150 can be electrically connected. At this time, the semiconductor light emitting elements 150 may be inserted into the anisotropic conductive film, thereby forming partition walls between the plurality of semiconductor light emitting elements 150.

Next, the second substrate 112 is removed. For example, the second substrate 112 may be removed using a laser Lift-off (LLO) method or a Chemical Lift-off (CLO) method.

Finally, the second substrate 112 is removed to expose the plurality of semiconductor light emitting elements 150 to the outside. If necessary, silicon oxide (SiOx) or the like may be applied to the circuit substrate to which the semiconductor light emitting element 150 is bonded to form a transparent insulating layer (not shown).

In addition, a step of forming a phosphor layer on one surface of the semiconductor light emitting element 150 may be included. For example, the semiconductor light emitting element 150 may be a blue semiconductor light emitting element that emits blue B light, and a red phosphor or a green phosphor for converting such blue B light into a color of a unit pixel may be formed on one surface of the blue semiconductor light emitting element.

The method for manufacturing a display device using a semiconductor light emitting element and the structure thereof described above can be modified in various forms. As this example, the vertical semiconductor light emitting element can be applied to the display device as described above. The vertical structure will be described below with reference to fig. 5 and 6.

In the modifications and embodiments described below, the same or similar reference numerals are used for the same or similar components as in the previous examples, and the first description is used instead of the description.

Fig. 7 is a perspective view showing another embodiment of a display device using a semiconductor light emitting element according to the present invention, fig. 8 is a cross-sectional view taken along line D-D of fig. 7, and fig. 9 is a conceptual view showing the vertical semiconductor light emitting element of fig. 8.

Referring to the drawing, the display device may be a display device using a vertical semiconductor light emitting element of a Passive Matrix (PM) system.

The display device includes a substrate 210, a first electrode 220, a conductive adhesive layer 230, a second electrode 240, and a plurality of semiconductor light emitting elements 250.

The substrate 210 is a circuit substrate configured with the first electrode 220, and may include Polyimide (PI) to implement a flexible display device. Any material may be used as long as it has insulating properties and flexibility.

The first electrode 220 is positioned on the substrate 210, and may form a bar-shaped electrode in one direction. The first electrode 220 may be formed to perform the function of a data electrode.

The conductive adhesive layer 230 is formed on the substrate 210 on which the first electrode 220 is positioned. Similar to a display device to which a flip chip type light emitting element is applied, the conductive adhesive layer 230 may be an Anisotropic Conductive Film (ACF), an anisotropic conductive paste (paste), a solution (solution) containing conductive particles, or the like. However, the case where the conductive adhesive layer 230 is implemented by an anisotropic conductive film is also shown in this embodiment.

When heat and pressure are applied to connect the semiconductor light emitting element 250 after the anisotropic conductive film is positioned on the substrate 210 in a state where the first electrode 220 is positioned on the substrate 210, the semiconductor light emitting element 250 is electrically connected to the first electrode 220. In this case, the semiconductor light emitting element 250 is preferably disposed on the first electrode 220.

As described above, the electrical connection is generated because, when heat and pressure are applied, a part of the anisotropic conductive film has conductivity in the thickness direction. Therefore, the anisotropic conductive film is divided into a portion 231 having conductivity and a portion 232 having no conductivity in the thickness direction.

In addition, the anisotropic conductive film includes an adhesive component, and thus the conductive adhesive layer 230 can achieve electrical connection and mechanical coupling between the semiconductor light emitting element 250 and the first electrode 220.

As described above, the semiconductor light emitting element 250 is positioned on the conductive adhesive layer 230, thereby constituting a single pixel in the display device. The semiconductor light emitting element 250 has excellent luminance, so that a single unit pixel can be constituted even if the size is small. In the size of such a single semiconductor light emitting element 250, the length of one side may be 80 μm or less, and may be a rectangular or square element. In the case of a rectangle, the size may be 20 × 80 μm or less.

The semiconductor light emitting element 250 may be a vertical type structure.

A plurality of second electrodes 240 are disposed between the plurality of vertical semiconductor light emitting elements, and the plurality of second electrodes 240 are disposed in a direction crossing the longitudinal direction of the first electrode 220 and electrically connected to the vertical semiconductor light emitting elements 250.

Referring to fig. 9, the vertical type semiconductor light emitting element includes: a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, an active layer 254 formed on the p-type semiconductor layer 255, an n-type semiconductor layer 253 formed on the active layer 254, and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256 located at the lower portion may be electrically connected to the first electrode 220 by the conductive adhesive layer 230, and the n-type electrode 252 located at the upper portion may be electrically connected to the second electrode 240, which will be described later. Such a vertical type semiconductor light emitting element 250 can be configured with electrodes up/down, thereby having a great advantage of being able to reduce the chip size.

Referring again to fig. 8, a phosphor layer 280 may be formed on one surface of the semiconductor light emitting element 250. For example, the semiconductor light emitting element 250 may be a blue semiconductor light emitting element 251 that emits blue B light, and a phosphor layer 280 for converting such blue B light into a color of a unit pixel may be provided. In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting a single pixel.

That is, a red phosphor 281 capable of converting blue light into red R light may be laminated on the blue semiconductor light emitting element 251 at a position constituting a red unit pixel, and a green phosphor 282 capable of converting blue light into green G light may be laminated on the blue semiconductor light emitting element 251 at a position constituting a green unit pixel. In addition, only the blue semiconductor light emitting element 251 may be used in a portion constituting a blue unit pixel. In this case, the unit pixels of red R, green G, and blue B may constitute one pixel.

However, the present invention is not necessarily limited thereto, and other structures for realizing blue, red, and green colors may be applied to a display device to which a flip chip type light emitting element is applied, as described above.

Again observing the present embodiment, the second electrode 240 is positioned between the plurality of semiconductor light emitting elements 250 and is electrically connected to the plurality of semiconductor light emitting elements 250. For example, the plurality of semiconductor light emitting elements 250 may be configured in a plurality of columns, and the second electrode 240 may be positioned between the columns of the plurality of semiconductor light emitting elements 250.

Since the distance between the semiconductor light emitting elements 250 constituting a single pixel is sufficiently large, the second electrode 240 may be positioned between the plurality of semiconductor light emitting elements 250.

The second electrode 240 may be formed in a bar (bar) shape in one direction, and may be arranged in a direction perpendicular to the first electrode.

Also, the second electrode 240 and the semiconductor light emitting element 250 may be electrically connected using a connection electrode protruding from the second electrode 240. More specifically, the connection electrode may be an n-type electrode of the semiconductor light emitting element 250. For example, the n-type electrode is formed as an ohmic electrode for ohmic (ohmic) contact, and the second electrode covers at least a part of the ohmic electrode by printing or deposition. Thereby, the second electrode 240 and the n-type electrode of the semiconductor light emitting element 250 can be electrically connected.

According to the drawing, the second electrode 240 may be on the conductive adhesive layer 230. In some cases, a transparent insulating layer (not shown) containing silicon oxide (SiOx) or the like may be formed on the substrate 210 on which the semiconductor light-emitting element 250 is formed. When the second electrode 240 is disposed after the transparent insulating layer is formed, the second electrode 240 is positioned on the transparent insulating layer. In addition, the second electrode 240 may also be formed to be spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

If a transparent electrode such as ITO (Indium tin oxide) is used to position the second electrode 240 on the semiconductor light emitting element 250, there is a problem that the adhesion between the ITO material and the n-type semiconductor layer is poor. Accordingly, the present invention may allow the second electrode 240 to be positioned between the semiconductor light emitting elements 250, thereby having an advantage that a transparent electrode such as ITO may not be required. Therefore, the n-type semiconductor layer and the conductive material having good adhesion can be used as the horizontal electrode without being limited by the selection of the transparent material, so that the light extraction efficiency can be improved.

According to the drawing, the partition wall 290 may be located between the semiconductor light emitting elements 250. That is, the partition wall 290 may be disposed between the vertical type semiconductor light emitting elements 250 to isolate the semiconductor light emitting elements 250 constituting a single pixel. In this case, the partition wall 290 may function to separate the unit pixels from each other, and may be integrally formed with the conductive adhesive layer 230. For example, when the semiconductor light emitting element 250 is inserted into the anisotropic conductive film, the base member of the anisotropic conductive film may form the partition wall.

In addition, when the base member of the anisotropic conductive film is black, the partition wall 290 may increase contrast (contrast) while having a reflective property even without other black insulators.

As another example, the partition wall 190 may be provided with a reflective partition wall separately. The partition wall 290 may include a Black (Black) or White (White) insulator according to the purpose of the display device.

The partition wall 290 may be located between the vertical type semiconductor light emitting element 250 and the second electrode 240 if the second electrode 240 is located right on the conductive adhesive layer 230 between the semiconductor light emitting elements 250. Therefore, with the semiconductor light emitting elements 250, it is also possible to constitute a single unit pixel in a small size, and the distance of the semiconductor light emitting elements 250 becomes relatively large enough, so that the second electrode 240 can be positioned between the semiconductor light emitting elements 250, and a flexible display device capable of realizing HD picture quality is provided.

Also, according to the drawing, the black matrix 291 may be disposed between the respective phosphors to improve contrast (contrast). That is, such a black matrix 291 can improve the contrast of luminance.

As explained above, the semiconductor light emitting element 250 is positioned on the conductive adhesive layer 230, thereby constituting a single pixel in the display device. The semiconductor light emitting element 250 has excellent luminance, so that a single unit pixel can be configured even if it is small in size. Therefore, a full-color display in which one pixel is constituted by unit pixels of red R, green G, and blue B can be realized by the semiconductor light-emitting element.

With the development of the display device using the semiconductor light emitting element of the present invention described above, it is necessary to improve the pixel integration or the pixel density. In particular, in order to improve pixel integration or pixel density in a display device capable of realizing Virtual Reality (VR) or Augmented Reality (AR), it is necessary to design a display device using a subminiature semiconductor light emitting element with a narrow pitch between pixels. Therefore, there is a limitation in applying the existing thick phosphor to a display device having improved pixel integration or pixel density. Therefore, in the present invention, a display device having a new structure capable of solving such a problem will be described.

That is, according to the present invention, the color conversion section having a thin thickness is provided, and therefore, it is possible to provide a display device capable of realizing colors in a display device having a high pixel integration degree or pixel density, a small size of a semiconductor light emitting element, and a narrow interval between pixels.

Further, since the reflective layer is provided in the color conversion portion and the reflective electrode is provided between the first conductivity type electrode and the first conductivity type semiconductor layer in the semiconductor light emitting element, the light source emitted from the semiconductor light emitting element can be utilized in the color conversion portion without loss. Therefore, although the thickness of the color conversion portion of the display device is thin, the color conversion efficiency can be maximized.

Fig. 10 is a partially enlarged view a of fig. 1 for explaining another embodiment of the present invention to which the new structure is applied. Fig. 11 is a sectional view taken along line E-E of fig. 10.

As the display device 1000 using semiconductor light emitting elements, the display device 1000 using Passive Matrix (PM) semiconductor light emitting elements is applied to the display device 1000 using the semiconductor light emitting elements shown in fig. 10 and 11, or the display device may be applied to Active Matrix (AM) semiconductor light emitting elements.

The display device 1000 includes a substrate 1010, a first electrode 1020, an insulating member 1030, a second electrode 1040, and a plurality of semiconductor light emitting elements 1050. Here, the first electrode 1020 and the second electrode 1040 protrude from the substrate 1010, and each include a plurality of electrode lines.

The substrate 1010 is a circuit substrate configured with a first electrode 1020, and may include Polyimide (PI) to implement a flexible display device. In addition, the substrate 1010 may be formed of a material having insulation but not flexibility. In addition, the substrate 1010 may be any one of a transparent material and an opaque material.

The first electrode 1020 protrudes on the substrate 1010, and may be formed as a long bar (bar) shaped electrode in one direction. The first electrode 1020 may be formed to perform the role of a data electrode.

Referring to this figure, an insulating member 1030 surrounding the plurality of semiconductor light emitting elements 1050 may be disposed on one surface of the substrate 1010. In one embodiment, the insulating member 1030 may include Polydimethylsiloxane (PDMS) or polymethylphenylsiloxane (PMPS), surrounds the semiconductor light emitting element 1050, and may include various materials having an insulating property.

Referring again to the drawings, the semiconductor light emitting element 1050 may be disposed between the insulating members 1030, and thus may also perform the role of a black matrix for improving the Contrast (Contrast) of the unit pixel. The black matrix may improve contrast of brightness while absorbing external light reflection between the unit pixels. As shown, the insulating member 1030 may surround the plurality of semiconductor light emitting elements 1050 and the plurality of color conversion portions 1100 and 1200.

The plurality of semiconductor light emitting elements 1050 may form a plurality of columns in a direction parallel to a plurality of electrode lines disposed at the first electrode 1020. However, the present invention is not limited thereto.

The first and second conductive type electrodes 1156 and 1152 of the plurality of semiconductor light emitting elements 1050 may face the first and second electrodes 1020 and 1040, respectively, and be electrically coupled. In addition, the aforementioned auxiliary electrode (not shown) may be provided to form an electrical bond between the auxiliary electrode and the first electrode 1020 or between the auxiliary electrode and the second electrode 1040.

In detail, the first electrode 1020 may include a protruding metal layer 1020a and an adhesive layer 1020 b. The first conductive type electrode 1156 and the metal layer 1020a are electrically coupled to each other by applying pressure or heat to the adhesive layer 1020 b.

In addition, the combination of the second electrode 1040 and the second conductive type electrode 1052 may be formed in a similar form to the combination of the first electrode 1020 and the first conductive type electrode 1056. The second electrode 1040 may include a protruding metal layer 1040a and an adhesive layer 1020 b. The second conductive type electrode 1152 and the metal layer 1040a may be electrically bonded to each other by applying pressure or heat to the adhesive layer 1040 b.

Referring to the present drawing, the electrical coupling of the semiconductor light emitting element 1050 and the first and second electrodes 1020 and 1040 is formed by the adhesive layers 1020b and 1040b of the first and second electrodes 1020 and 1040, but the present invention is not limited thereto. For example, the electrodes of the semiconductor light emitting element may be electrically connected by the conductive adhesive layer or the like. In this case, the adhesive layers 1020b, 1040b in this example may also be omitted.

Further, the display device 1000 includes color conversion sections 1100 and 1200 that convert colors, and the color conversion sections 1100 and 1200 are laminated on one surface of the plurality of semiconductor light emitting elements 1050. An adhesive member 1060 may be disposed between the color conversion sections 1100, 1200 and the semiconductor light emitting element 1050 to form a physical bond between the color conversion sections and the semiconductor light emitting element. The adhesive member 1060 is formed of a transparent material, so that light emitted from the semiconductor light emitting element 1050 can be allowed to be incident to the color conversion sections 1100, 1200.

In one embodiment, the semiconductor light emitting element 1050 may be a blue semiconductor light emitting element emitting blue B light, and the color conversion parts 1100 and 1200 may perform a function of converting the blue B light incident through the adhesive member 1060 into a color of the unit pixel. The color conversion sections 1100, 1200 may be a red color conversion section 1100 or a green color conversion section 1200, respectively, which constitute a single pixel.

In detail, the red color conversion section 1100 may be stacked on the blue semiconductor light emitting element 1050 at a position where the red unit pixel is configured, so that the blue B light is converted into the red R light. In addition, a green color conversion section 1200 may be laminated on the blue semiconductor light emitting element 1050 at a position constituting the green unit pixel so as to convert the blue B light into the green G light. In addition, only the blue semiconductor light emitting element 1050 may be used alone to emit blue B light in a portion constituting the blue unit pixel. Therefore, the unit pixels of red R, green G, and blue B may constitute one pixel.

More specifically, the color conversion sections of one color may be stacked along each line of the first electrodes 1020. Thus, one line in the first electrode 1020 may be an electrode controlling one color. That is, the unit pixel can be realized by arranging red R, green G, and blue B in this order along the second electrode 1040. However, the present invention is not limited thereto.

The red color conversion section 1100 includes a porous layer 1101, a wavelength conversion layer 1102, a reflective layer 1103, and a plurality of protrusions 1105, 1107 when viewed. The porous layer 1101 may be disposed on the other surface of the red color conversion section 1100, that is, in the vicinity of the surface of the semiconductor light emitting element 1050 on which blue B light is incident.

In one embodiment, the wavelength conversion layer 1102 performs the function of converting blue B light into the color of the unit pixel, such as the phosphor layer described above. That is, the wavelength conversion layer 1102 of the red color conversion section 1100 converts the blue B light into the red R light.

On the other hand, the porous layer 1101 can minimize emission of blue light emitted from the semiconductor light emitting element 1050 to the side surface of the red color conversion portion 1100, and can improve the efficiency of converting blue light into red R light in the wavelength conversion layer 1102.

In addition, the reflective layer 1103 prevents emission of blue light that has not been converted to red light in the wavelength conversion layer 1102. Therefore, the converted light and the blue light that is not converted into red in the wavelength conversion layer can be prevented from being emitted after being mixed with each other. Further, the blue light reflected at the reflective layer 1103 may be returned again to the wavelength conversion layer 1102 to be converted into red light, so that the color conversion efficiency may be improved. This will be described in detail in fig. 14a described later.

Further, the reflective layer 1103 of the red color conversion part 1100 may include a plurality of layers 1103a to 1103d to effectively reflect blue light that is not converted into red light in the wavelength conversion layer 1102. At least one of the plurality of layers may include a III-V compound to effectively reflect blue light.

In an embodiment, in the red color conversion section 1100 that converts the color from blue light to red light, the plurality of layers may be in the form of a stack of layers including AlAs and layers including GaAs. In detail, the first layer 1103a of the reflective layer 1103 stacked on one surface of the wavelength conversion layer 1102 may be formed as an AlAs layer not doped with impurities, and the second layer 1103b may be formed as a GaAs layer not doped with impurities. Further, the third layer 1103c may be formed as an AlAs layer not doped with impurities like the first layer 1103 a. Also, the fourth layer 1103d may be formed as a GaAs layer not doped with impurities, like the second layer 1103 b. However, the present invention is not necessarily limited thereto, and the reflective layer 1103 of the red color conversion portion 1100 may have various structures and various thicknesses as a plurality of layers that allow red light to pass therethrough and can reflect blue light again to the wavelength conversion layer 1102.

On the other hand, the green color conversion section 1200 includes a porous layer 1201, a wavelength conversion layer 1202, a reflective layer 1203, and a plurality of protrusions 1205, 1207 when viewed. The porous layer 1201 may be disposed on the other surface of the green color conversion section 1200, that is, in the vicinity of the surface of the semiconductor light emitting element 1050 on which the blue B light is incident.

In one embodiment, wavelength conversion layer 1202, such as the phosphor layer described above, may perform the function of converting blue B light to the color of the unit pixel. That is, the wavelength conversion layer 1202 of the green color conversion section 1200 converts the blue B light into the green G light.

On the other hand, porous layer 1201 may be formed in a similar manner to porous layer 1101 described previously. The porous layer 1201 can minimize emission of blue B light emitted from the semiconductor light emitting element 1050 to the side of the green color conversion portion 1200, and can improve the efficiency of converting blue light into green G light in the wavelength conversion layer 1202.

In addition, reflective layer 1203 prevents emission of blue light that has not been converted to green light at wavelength conversion layer 1202. Therefore, the light converted in the wavelength conversion layer and the blue light not converted into the green light can be prevented from being emitted after being mixed with each other. Further, the blue light reflected by the reflective layer 2103 can be returned to the wavelength conversion layer 2102 again and converted into green light, so that the color conversion efficiency can be improved. This will be described in detail in fig. 14b described later.

Further, the reflective layer 1203 of the green color conversion section 1200 may include a plurality of layers 1203a to 1203e to efficiently reflect light that is not converted into green light in the wavelength conversion layer 1202. At least one of the plurality of layers may include a III-V compound to effectively reflect blue light.

In an embodiment, in the green color conversion part 1200 that converts the color from the blue light to the green light, the plurality of layers of the reflective layer 1203 may be in the form of a stack of layers including GaN. In detail, the first layer 1203a of the reflection layer 1203 stacked on one surface of the wavelength conversion layer 1202 may be formed as a GaN layer doped with the second conductivity type impurity, and the second layer 1203b and the fourth layer 1203d may be formed as a GaN layer having the second conductivity type impurity at a lower concentration than the first layer 1203 a. In addition, the third layer 1203c and the fifth layer 1203e may be formed as GaN layers doped with the same second conductive type impurity as the first layer 1203 a.

On the other hand, the first layer 1203a, the third layer 1203c, and the fifth layer 1203e may be formed of a porous material capable of electropolishing, thereby forming pores. However, the present invention is not necessarily limited thereto, and the reflective layer 1203 of the green color conversion section 1200 may have various structures and various thicknesses as a plurality of layers that allow green light to transmit and can reflect blue light again to the wavelength conversion layer 1202.

Fig. 12a is a conceptual diagram of the red color conversion section 1100 of fig. 11, and fig. 12b and 12c are perspective views of the red color conversion section 1100 of fig. 11.

Referring to fig. 12a, 12b, and 12c, as described above, the red color conversion section 1100 may include the porous layer 1101, the wavelength conversion layer 1102, the reflective layer 1103, and the first bump 1105. In addition, a second protrusion 1107 may be further included on the other surface of the porous layer 1101 of the red color conversion portion 1100.

Referring to this figure, blue light emitted from the semiconductor light emitting element 1050 enters the second protrusion 1107, the porous layer 1101, the wavelength conversion layer 1102, the reflective layer 1103, and the first protrusion 1105 in this order. In particular, blue light emitted from the semiconductor light emitting element 1050 needs to be transmitted to the wavelength conversion layer 1102 without losing light. Therefore, the porous layer 1101 may be formed of a porous material capable of electropolishing, thereby forming pores. Further, the porous layer 1101 may be formed of a second conductivity type semiconductor.

In detail, when the blue light emitted from the semiconductor light emitting element 1050 transmits through the porous layer 1101 of the porous material, it can be transmitted to the wavelength conversion layer 1102 without being intercepted by the porous layer 1101.

In addition, blue light emitted from the semiconductor light emitting element 1050 can be diffracted in the porous layer 1101. Accordingly, the loss of light emitted to the side of the red color conversion section 1100 can be minimized. Accordingly, the loss of blue light emitted from the semiconductor light emitting element 1050 can be reduced, so that the color conversion efficiency in the case where blue light is converted into red light by the red color conversion portion 1100 can be increased.

In one embodiment, the wavelength conversion layer 1102 performs a function of converting blue B light of the semiconductor light emitting element into a color of the unit pixel. In detail, the wavelength conversion layer 1102 of the red color conversion section 1100 may convert blue B light into red R light.

In addition, the reflective layer 1103 may include a plurality of layers 1103a to 1103d to reflect blue light that is not converted into red light in the wavelength conversion layer 1102. At least one of the plurality of layers may include a III-V compound to effectively reflect blue light.

In an embodiment, in the red color conversion section 1100 that converts a color from blue light to red light, a layer including AlAs and a layer including GaAs may be sequentially stacked as the plurality of layers.

In addition, in another embodiment, the wavelength conversion layer may also convert blue B light of the semiconductor light emitting element into green G light, and in the case of converting blue light into green light, the plurality of layers of the reflective layer may be in the form of a stack of layers including GaN.

Referring to fig. 12b, in one surface of the reflective layer 1103, that is, in the surface 1104 of the reflective layer 1103, there are a first region 1104a and a second region 1104b surrounded by the first region 1104 a. The first 1104a and second 1104b regions of the surface 1104 have different roughness. Specifically, the surface roughness of the second region 1104b is larger than that of the first region 1104a, and a plurality of first protrusions 1105 are arranged in the second region 1104 b.

In an embodiment, the first bump 1105 may be formed of a second conductivity type semiconductor, and may be formed to have a higher porosity and a higher impurity concentration than the porous layer 1101. The first bump 1105 may be formed of a material capable of electropolishing.

Further, the first bump 1105 may be a porous structure having pores formed therein. Therefore, even if the first bump 1105 is formed on the reflective layer 1103, the emitted light is not disturbed, and the loss of the emitted light can be minimized.

In addition, the upper surfaces of the plurality of first protrusions 1105 may be formed as flat cut surfaces. In addition, a portion of the plurality of first protrusions 1105 may be cylindrical. Also, another portion of the plurality of first embossments 1105 may have a conical shape. Also, the plurality of first protrusions 1105 may have different heights.

On the other hand, referring to fig. 12c, the surface 1106 of the other surface of the porous layer 1101 also has a first region 1106a and a second region 1106b surrounded by the first region 1106a, the surface roughness of the second region 1106b is larger than that of the first region 1106a, and a plurality of second protrusions 1107 may be further arranged in the second region 1106 b.

In an embodiment, the second protrusion 1107 may be formed of a second conductivity type semiconductor, and may be formed to have a higher impurity concentration than the porous layer 1101. The plurality of second protrusions 1107 may also be formed of a material capable of electropolishing, like the porous layer 1101.

In addition, the second protrusions 1107 may be a porous structure having pores formed therein. In detail, the porosity of the second protrusions 1107 may be higher than that of the porous layer 1101. Therefore, even if the second protrusion 1107 is formed on the other surface of the porous layer 1101, loss of light can be minimized when blue light emitted from the semiconductor light emitting element 1050 is transmitted to the wavelength conversion layer 1102.

In addition, the upper surfaces of the plurality of second protrusions 1107 may be formed as flat cutting surfaces. In addition, a portion of the plurality of second protrusions 1107 may be cylindrical. Also, another portion of the plurality of second protrusions 1107 may have a conical shape. Also, the plurality of second protrusions 1107 may have different heights.

Fig. 13a is a conceptual diagram illustrating the flip-chip semiconductor light emitting element 1050 of fig. 11, and fig. 13b is a perspective diagram illustrating the flip-chip semiconductor light emitting element 1050 of fig. 11.

When the semiconductor light emitting element 1050 of the present example is viewed, the layer formed of a porous material is disposed on the semiconductor light emitting element 1050, so that light emitted to the side surface of the semiconductor light emitting element 1050 can be minimized and emitted to the surface of the semiconductor light emitting element, and therefore the light emitting efficiency of the semiconductor light emitting element can be increased.

Referring to fig. 13a and 13b, the semiconductor light emitting element 1050 of the display device 1000 includes: the semiconductor device includes a first conductive type electrode 1156, a second conductive type electrode 1152, a first conductive type semiconductor layer 1155 in which the first conductive type electrode 1156 is disposed, a second conductive type semiconductor layer 1153 which overlaps with the first conductive type semiconductor layer 1155 and in which the second conductive type electrode 1152 is disposed, and an active layer 1154 which is disposed between the first conductive type semiconductor layer 1155 and the second conductive type semiconductor layer 1153.

A first conductive type electrode 1156 is formed on one surface of the first conductive type semiconductor layer 1155, an active layer 1154 is formed between the other surface of the first conductive type semiconductor layer 1155 and one surface of the second conductive type semiconductor layer 1153, and a second conductive type electrode 1152 is formed on one surface of the second conductive type semiconductor layer 1153. In this case, the second conductive type electrode 1152 may be disposed on one surface of the second conductive type semiconductor layer 1153 which is not covered with the first conductive type semiconductor layer 1155.

The first conductive type electrode 1156 may be a p-type electrode, the first conductive type semiconductor layer 1155 may be a p-type semiconductor layer, the second conductive type electrode 1152 may be an n-type electrode, and the second conductive type semiconductor layer 1153 may be an n-type semiconductor layer. However, the present invention is not necessarily limited thereto, and the first conductivity type may be exemplified as an n-type and the second conductivity type as a p-type.

The first-conductivity-type electrode 1156 and the second-conductivity-type electrode 1152 may be composed of a plurality of layers performing functions such as an adhesive layer, a barrier layer, a low-resistance layer, an oxidation resistant layer, and the like.

More specifically, the first conductive type electrode 1156 may include a conductive electrode 1156a and a reflective electrode 1156 b.

In an embodiment, the reflective electrode 1156b may be designed to be capable of reflecting light emitted from the semiconductor light emitting element 1050. Accordingly, the reflective electrode 1156b may emit light, which may be lost in the other surface of the semiconductor light emitting element 1050, that is, in the substrate direction, among the light emitted from the semiconductor light emitting element 1050, to the light emitting surface of the semiconductor light emitting element 1050. Therefore, the light source emitted from the semiconductor light emitting element can be used in the color conversion sections 1100 and 1200 without loss, and the color conversion efficiency can be maximized.

In addition, the semiconductor light emitting element 1050 includes a passivation layer 1157 formed to cover outer surfaces of the first conductive type semiconductor layer 1155 and the second conductive type semiconductor layer 1153. For example, a passivation layer 1157 may be formed to surround respective side surfaces and a bottom surface of the first conductive type semiconductor layer 1155 and the second conductive type semiconductor layer 1153.

In detail, the passivation layer 1157 may be formed to surround the side surface of the semiconductor light emitting element to stabilize the characteristics of the semiconductor light emitting element 1050, and is formed of an insulating material. In this case, the passivation layer 1157 may be an insulating film made of a compound or oxide of silicon. As described above, since the electrical connection between the first conductive type semiconductor layer 1155 and the second conductive type semiconductor layer 1153 is broken by the passivation layer 1157, P-type (P-type) GaN and N-type (N-type) GaN of the semiconductor light emitting element may be insulated from each other.

In this case, the passivation layer 1157 may also include a plurality of passivation layers having different refractive indexes to reflect light emitted to the sides of the first conductive type semiconductor layer 1155 and the second conductive type semiconductor layer 1153.

However, the present invention is not necessarily limited thereto, and the passivation layer 1157 may be formed as a single layer. The substance having a relatively high refractive index and the substance having a relatively low refractive index among the plurality of passivation layers may be repeated and stacked.

On the other hand, the second conductive type semiconductor layer 1153 is formed of a porous material capable of electropolishing (Electro Polishing), and includes a first layer 1153a disposed on an outer layer of the semiconductor light emitting element 1050, a second layer 1153b disposed on a lower portion of the first layer 1153a and having a lower impurity concentration than the first layer 1153a, and a third layer 1153c disposed between the second layer 1153b and the active layer 1154 and having a higher impurity concentration than the second layer 1153 b.

In detail, the impurity concentration may be formed in a form in which the first layer 1153a, the third layer 1153c, and the second layer 1153b are sequentially higher. That is, the first layer 1153a has a higher impurity concentration than the third layer 1153c, and the second layer 1153b of the second conductive type semiconductor layer 1153 may have the lowest impurity concentration.

In addition, the first layer 1153a may be formed of a porous material capable of being electropolished, thereby forming pores. In detail, the first layer 1153a of a porous material can emit light generated inside the semiconductor light emitting element 1050 to the light emitting surface of the semiconductor light emitting element without being intercepted by the first layer 1153 a.

In addition, light generated inside the semiconductor light emitting element 1050 can be diffracted in the first layer 1153 a. Therefore, loss of light emitted to the side of the semiconductor light emitting element 1050 can be minimized. Therefore, since most of light is emitted to the light emitting surface of the semiconductor light emitting element 1050, the light emitting efficiency of the semiconductor light emitting element 1050 can be increased.

In addition, in the surface 1158 of the first layer 1153a, there are a first region 1158a and a second region 1158b surrounded by the first region 1158 a. The surface 1158 of the first layer 1153a includes a first region 1158a and a second region 1158b having different roughness. In detail, the second region 1158b has a surface roughness greater than that of the first region 1158a, and a plurality of third protrusions 1159 are disposed on the second region 1158 b.

In an embodiment, the third bump 1159 may be formed of a second conductivity type semiconductor, and may have a higher impurity concentration than the first layer 1153 a. The plurality of third projections 1159 may also be formed of a material capable of electropolishing, as with the first layer 1153 a.

In addition, the third protrusion 1159 may be a porous structure having pores formed therein. In detail, the porosity of the third protrusion 1159 may be higher than that of the first layer 1153 a. Therefore, even if the third projections 1159 are formed on the first layer 1153a, light emitted from the semiconductor light emitting element 1050 is not disturbed, loss of emitted light can be minimized, and most of light can be emitted to the light emitting surface of the semiconductor light emitting element 1050.

In addition, the upper surfaces of the plurality of third protrusions 1159 may be formed as flat cutting surfaces. In addition, a portion of the plurality of third protrusions 1159 may be cylindrical. Also, another portion of the plurality of third embossments 1159 may have a conical shape. Also, the plurality of third protrusions 1159 may have different heights.

Fig. 14a is a schematic diagram illustrating color conversion in the red color conversion section 1100 of fig. 11, and fig. 14b is a schematic diagram illustrating color conversion in the green color conversion section 1200 of fig. 11.

Referring to fig. 14a, the semiconductor light emitting element 1050 is a blue semiconductor light emitting element that emits blue B light, which is incident through the adhesive member 1060, may be transmitted through the wavelength conversion layer 1102 and converted into red R light. Further, the reflective layer 1103 including a plurality of layers allows red R light to pass therethrough, and may reflect blue B light, which is not converted into red light in the wavelength conversion layer 1102, to the wavelength conversion layer 1102. Accordingly, the blue B light reflected at the reflective layer 1103 may be re-converted into red light in the wavelength conversion layer 1102.

On the other hand, of the light emitted from the semiconductor light emitting element 1050, light that may be lost on the other surface of the semiconductor light emitting element 1050, that is, in the substrate direction, may be reflected in the reflective electrode 1156 b. Therefore, light of a light source emitted from the semiconductor light emitting element can be emitted to the light emitting surface of the semiconductor light emitting element 1050 without loss, and light reflected at the reflective electrode 1156b can be also converted into red light in the wavelength conversion layer 1102, thereby enabling color conversion efficiency to be maximized.

As described above, due to the interaction of the reflective layer 1103 of the red color conversion portion 1100 and the reflective electrode 1156b of the semiconductor light emitting element 1050, the color conversion efficiency can be maximized even if the overall thickness of the red color conversion portion 1100 is reduced.

Referring to fig. 14B, the semiconductor light emitting element 1050 is a blue semiconductor light emitting element that emits blue B light, which is incident through the adhesive member 1060, may be transmitted through the wavelength conversion layer 1202 and converted into green G light. Further, the reflective layer 1103 including a plurality of layers allows green G light to pass therethrough, and can reflect blue B light, which is not converted into green light in the wavelength conversion layer 1202, to the wavelength conversion layer 1202. Accordingly, the blue B light reflected at the reflective layer 1103 may be re-converted into green light in the wavelength conversion layer 1202.

On the other hand, light that may be lost on the other surface of the semiconductor light emitting element 1050, that is, in the substrate direction, among light emitted from the semiconductor light emitting element 1050 may be reflected at the reflective electrode 1156 b. Therefore, light of a light source emitted from the semiconductor light emitting element can be emitted to the light emitting surface of the semiconductor light emitting element 1050 without loss, and light reflected at the reflective electrode 1156b can also be converted into green light in the wavelength conversion layer 1202, thereby enabling color conversion efficiency to be maximized.

As described above, due to the interaction of the reflective layer 1103 of the green color conversion section 1200 and the reflective electrode 1156b of the semiconductor light emitting element 1050, the color conversion efficiency can be maximized even if the overall thickness of the green color conversion section 1200 is reduced.

Therefore, the display device 1000 according to the present invention includes the plurality of reflective layers 1103 and 1203 and the reflective electrode 1156b, and thus has a plurality of color conversion portions 1100 and 1200 which can be provided with a small thickness in a display device in which the pixel integration or the pixel density is high, the size efficiency of the semiconductor light emitting element, and the interval between pixels is narrow.

On the other hand, the semiconductor light emitting element applied to the display device described above can be modified in various forms. This modification will be described later.

Fig. 15 is a sectional view for explaining another embodiment of a display device 2000 to which a new structure is applied, and fig. 16 is a sectional view for explaining still another embodiment of the present invention to which a display device 3000 of a new structure is applied. In addition, fig. 17 is an enlarged view of a portion a of fig. 1 for explaining still another embodiment of the present invention to which a display device 4000 of a new structure is applied.

Referring to fig. 15, the display device 2000 may include a blue semiconductor light emitting element 2050a and a green semiconductor light emitting element 2050 b. Specifically, the red color conversion portion 2100 may be stacked on the blue semiconductor light emitting element 2050a at a position constituting a red unit pixel.

On the other hand, referring to fig. 16, the display device 3000 may include a blue semiconductor light emitting element 3050a and a green semiconductor light emitting element 3050 b. In detail, the red color conversion section 3100 may be stacked on the green semiconductor light emitting element 3050b at a position constituting the red unit pixel. Therefore, green G light emitted from the green semiconductor light-emitting element 3050b can be converted into red R light.

Referring to fig. 15 and 16, a unit pixel may be configured by using only the green semiconductor light-emitting element 2050b in a portion configuring a green unit pixel and only the blue semiconductor light-emitting element 2050a in a portion configuring a blue unit pixel. Therefore, in each of the display devices 2000 and 3000, the unit pixels of red R, green G, and blue B may constitute one pixel.

Referring to fig. 17, the display device 4000 may include a white semiconductor light emitting element 4050. In this case, in order to constitute a unit pixel, the red color conversion section 4100, the green color conversion section 4200, and the blue color conversion section 4300 are provided on the white semiconductor light emitting element 4050, whereby the unit pixels of red R, green G, and blue B may constitute one pixel.

Further, the display device 4000 may include an insulating member 4030' surrounding the red color conversion portion 4100, the green color conversion portion 4200, and the blue color conversion portion 4300. In addition, an adhesive member 4060' may be further included on the red color conversion section 4100, the green color conversion section 4200, and the blue color conversion section 4300. Further, a polyimide 4070 and a glass 4080 may be further provided on the adhesive member 4060' to protect the white semiconductor light emitting element 4050, the red color conversion portion 4100, the green color conversion portion 4200, and the blue color conversion portion 4300.

Fig. 18 is a sectional view showing a method of manufacturing the green color conversion section 1200 according to the present invention. In the method of manufacturing the green color conversion section 1200 described below, the same or similar constituents as those of the previous embodiment are given the same or similar reference numerals, and the description is replaced by the first description.

Referring to a of fig. 18, a plurality of layers for manufacturing the green color conversion part 1200 may be stacked on the growth substrate W. In detail, the growth substrate W may include an undoped semiconductor layer W1 and a growth substrate W2 formed of a sapphire (spire) substrate or a silicon (silicon) substrate.

In order to manufacture the green color conversion section 1200, an electropolishable (ElectroPolishing) -second conductive type semiconductor layer 1201', a wavelength conversion layer 1202, a reflective layer 1203, and an electropolishable sacrificial layer 1208 may be stacked on the growth substrate W. In addition, the second conductive type semiconductor layer 1201', the wavelength conversion layer 1202, the reflective layer 1203, and the sacrificial layer 1208 used to manufacture the green color conversion section 1200 need not be electrically connected to each other. Accordingly, the second conductive type semiconductor layer 1201', the wavelength conversion layer 1202, the reflective layer 1203, and the sacrificial layer 1208 may be paired and stacked in multiple layers. Further, the green color conversion portion 1200 can be repeatedly manufactured continuously by etching the pair of second conductivity type semiconductor layers 1201', the pair of wavelength conversion layers 1202, the pair of reflection layers 1203, and the pair of sacrifice layers 1208.

Referring to b of fig. 18, etching may be performed after forming a bonding member 1060 pattern on the second conductive type semiconductor layer 1201 ', whereby the second conductive type semiconductor layer 1201', the wavelength conversion layer 1202, the reflective layer 1203, and the sacrificial layer 1208 may be isolated in the form of a green color conversion part 1200.

Referring to c of fig. 18, electropolishing may be performed by applying a current to the second conductive type semiconductor layer 1201' and the sacrificial layer 1208 on the electrolyte solution. Accordingly, a portion of the second conductive type semiconductor layer 1201' may be etched to form the porous layer 1201. In addition, in the sacrificial layer 1208 in which the concentration of the second conductive type impurity is higher, the electrolytic polishing can be more actively performed due to the difference in the reaction rate. Therefore, a plurality of columns 1205' which are porous structures having pores formed therein can be formed. That is, the porosity of the pillars 1205' may be higher than that of the porous layer 1201 according to the difference in reaction rate of electropolishing.

Referring to d of fig. 18, may be adhered to the light emitting surface of the aforementioned semiconductor light emitting element 1050 by an adhesive member 1060 and transferred. The green color conversion part 1200 may be separated by an external force, and the pillars 1205' may be cut as a porous structure having pores formed therein. As described above, the green color conversion part manufactured in a to d of fig. 18 may be in a form not including the aforementioned second protrusion. The pillars 1205' may be cut and separated into first protrusions 1205 on the reflective layer 1203 and second protrusions 1207 on the porous layer 1201 of the green color conversion part to be subsequently manufactured.

Next, e to h of fig. 18 may repeat the aforementioned processes of a to d of fig. 18 to transfer the green color conversion section 1200 to the aforementioned semiconductor light emitting element 1050. Further, when the green color conversion part 1200 is transferred to the aforementioned semiconductor light emitting element 1050, the pillars 1205' are cut by an external force, so that the second protrusions 1207 on the porous layer 1201 of the green color conversion part can be separated. Therefore, the green color conversion part manufactured in e to h of fig. 18 may further include the second protrusions 1207 on the porous layer 1201.

The red color conversion portion 1100 can also be manufactured by the manufacturing method described with reference to fig. 18.

The display device using the semiconductor light emitting element described above is not limited to the structure and method of the above-described embodiments, and may be configured by selectively combining all or part of the embodiments, which may be variously modified.