阅读说明：本技术 多气隙全阻性盲孔型探测器的制作方法 (Method for manufacturing multi-air-gap full-resistance blind hole type detector ) 是由 周意 吕游 宋国锋 尚伦霖 张广安 鲁志斌 刘建北 张志永 邵明 于 2020-06-28 设计创作，主要内容包括：本公开提供一种多气隙全阻性盲孔型探测器的制作方法,包括：步骤S1：制备基材材料,包括读出电极基材,通孔单元基材,气隙垫片,平板电极基材,漂移电极基材；步骤S2：利用步骤S1所制备的基材材料制备读出电极,平板电极,漂移电极,以及通孔单元；步骤S3：在读出电极上依次交替安装通孔单元区和平板电极,直至安装至第N层通孔单元区,N≥2,得到全阻性盲孔型放大区；以及步骤S4：在步骤S3所制备的全阻性盲孔型放大区上方安装漂移电极和窗,完成多气隙全阻性盲孔型探测器的制作。(The invention provides a method for manufacturing a multi-air-gap fully-resistive blind hole type detector, which comprises the following steps: step S1: preparing a substrate material which comprises a reading electrode substrate, a through hole unit substrate, an air gap gasket, a flat electrode substrate and a drift electrode substrate; step S2: preparing a readout electrode, a plate electrode, a drift electrode, and a through-hole unit using the substrate material prepared in step S1; step S3: sequentially and alternately installing through hole unit areas and plate electrodes on the reading electrode until the reading electrode is installed to the Nth layer of through hole unit area, wherein N is more than or equal to 2, and obtaining a fully-resistive blind hole type amplification area; and step S4: and (5) installing a drift electrode and a window above the fully-resistive blind hole type amplification region prepared in the step (S3) to finish the manufacture of the multi-air-gap fully-resistive blind hole type detector.)

1. A manufacturing method of a multi-air-gap fully-resistive blind hole type detector comprises the following steps:

step S1: preparing a substrate material which comprises a reading electrode substrate, a through hole unit substrate, an air gap gasket, a flat electrode substrate and a drift electrode substrate;

step S2: preparing a readout electrode, a plate electrode, a drift electrode, and a through-hole unit using the substrate material prepared in step S1;

step S3: sequentially and alternately installing through hole unit areas and plate electrodes on the reading electrode until the reading electrode is installed to the Nth layer of through hole unit area, wherein N is more than or equal to 2, and obtaining a fully-resistive blind hole type amplification area; and

step S4: and (5) installing a drift electrode and a window above the fully-resistive blind hole type amplification region prepared in the step (S3) to finish the manufacture of the multi-air-gap fully-resistive blind hole type detector.

2. The method for manufacturing a multi-air-gap fully-resistive blind hole type detector according to claim 1, wherein the step S2 includes:

substep S21: preparing a DLC film on the upper surface of a reading electrode substrate to obtain a reading electrode;

substep S22: preparing DLC films on the upper and lower surfaces of the flat electrode substrate to obtain a flat electrode;

substep S23: preparing a DLC film on the lower surface of the drift electrode substrate to obtain a drift electrode; and

substep S24: and preparing a DLC film on the upper surface of the through hole unit substrate, and then manufacturing a small hole array to obtain the through hole unit.

3. The method for manufacturing the multi-air-gap fully-resistive blind hole type detector according to claim 2, wherein the DLC on the upper surface of the reading electrode has a thickness of 40 nm-1 μ M and a surface resistivity of 10M Ω/□ -2G Ω/□.

4. The method for manufacturing the multi-air-gap fully-resistive blind hole type detector according to claim 2, wherein the DLC thickness of the lower surface of the drift electrode is between 40nm and 1 μ M, and the surface resistivity is between 50M Ω/□ and 10G Ω/□.

5. The method for manufacturing the multi-air-gap fully-resistive blind hole type detector according to claim 2, wherein the DLC thickness of the upper and lower surfaces of the plate electrode is between 40nm and 1 μ M, and the surface resistivity is between 50M Ω/□ and 10G Ω/□.

6. The manufacturing method of the multi-air-gap fully-resistive blind hole type detector according to claim 2, wherein the DLC thickness of the upper surface of the through hole unit is between 40nm and 1 μm; the surface resistivity is 50M omega/□ -10G omega/□.

7. The manufacturing method of the multi-air-gap fully-resistive blind hole type detector according to claim 2, wherein the aperture of the small holes in the small hole array in the through hole unit is between 0.2mm and 0.8mm, and the distance between the small holes is between 0.4mm and 1.6 mm.

8. The method for manufacturing the multi-air-gap fully-resistive blind hole type detector according to claim 1, wherein the step S3 includes:

substep S31: mounting a positioning pin on the reading electrode;

substep S32: installing a first layer of through hole unit area on the reading electrode through a positioning pin;

substep S33: mounting a first layer of flat plate electrodes on the first layer of through hole unit area; and

substep S34: and continuously installing a second layer of through hole unit area and a second layer of flat plate electrode on the first layer of flat plate electrode until the second layer of through hole unit area is installed to the Nth layer of through hole unit area, and finishing the preparation of the fully-resistive blind hole type amplification area.

9. The method for manufacturing the multi-air-gap fully-resistive blind hole type detector according to claim 1, wherein the through hole unit substrate is a double-layer plate with a thickness of 0.15mm to 0.8 mm.

10. The method for manufacturing the multi-air-gap fully-resistive blind hole type detector according to claim 1, wherein the thickness of the air gap gasket is 0.2 mm-1 mm.

Technical Field

The disclosure relates to the technical field of gas detectors, in particular to a manufacturing method of a multi-air-gap fully-resistive blind hole type detector.

Background

The gas detector is widely applied to the current nuclear and particle physical experiments due to the performance characteristics of low manufacturing cost, high position resolution and time resolution, strong irradiation resistance and the like. Accurate time measurement combined with position measurement is the most common method for particle identification in nuclear and particle physics experiments. Therefore, the gas detector with high precision timing and high precision positioning performance has extremely high application prospect in nuclear and particle physical experiments. At present, the mainstream gas detectors are micro-porous type, micro-mesh type and other micro-structure gas detectors capable of realizing high position resolution and high counting rate capability, and multi-air gap flat type detectors capable of realizing high time resolution capability. Microstructured gas detectors benefit from the fine processing technology on semiconductor detectors and can achieve better than 100 μm position resolution. However, the microstructure gas detector often has a wide air gap as a drift region for ionization of incident particles, so that the time statistical fluctuation of the ionization of the incident particles in the drift region of the detector is large, the time resolution of a single detector can only reach about several nanoseconds, and the performance of high time resolution cannot be realized. The typical representation of the multi-air-gap flat-plate detector is a multi-air-gap resistance plate chamber, and the thickness of the air gap of each layer of detector is reduced by increasing the number of layers of the detector, so that the time statistical fluctuation of charged particles ionized in the air gap is effectively reduced, and the time resolution performance of tens of picoseconds is realized. However, because the multi-air-gap resistance plate chamber usually needs to use glass with very high resistivity as a dielectric material, the counting rate performance of the multi-air-gap resistance plate chamber is low, and the multi-air-gap resistance plate chamber cannot meet the application in a high counting rate environment.

With the further development of the resistive coating technology in the field of gas detectors, the resistive electrode technology has become the key research direction of the next generation of microstructure gas detectors. The resistive electrode can inhibit the sparking and discharging phenomena of the detector, so that the detector obtains higher gain, and the detector can stably work for a longer time. In addition, the characteristic that the resistance electrode is transparent to the sensing signal makes the preparation of the microstructure gas detector with high position resolution, high counting rate and high time resolution possible. The resistive electrode replaces the original metal electrode of the microstructure gas detector, the air gap thickness of the drift region is reduced, and the multilayer microstructure gas detector structure is adopted, so that the method is a feasible scheme for manufacturing the detector with high counting rate, high position resolution and high time resolution. The characteristic that the resistive electrode is transparent to the sensing signal enables each layer of detector to generate the sensing signal on the reading electrode, so that the time statistics fluctuation of ionization of charged particles in an air gap can be effectively suppressed through reduction of the air gap of the drift region and use of a multilayer structure, and the detector has better time resolution performance. Because the working main body of the micro-structure gas detector is still the micro-structure gas detector, the detector can effectively keep high counting rate capability and high position resolution capability.

Researchers at the european nuclear Center (CERN) have proposed a concept of Fast Timing response micro-structured gas detector (FTM) by combining the characteristics of both micro-structured gas detectors and multi-gap resistive plate chamber detectors. The working principle of the detector is based on a blind hole type GEM detector, and a multilayer structure is prepared, so that high counting rate, high time resolution and high position resolution performance are realized simultaneously. The structure of the four-layer FTM detector manufactured by the method is shown in figure 1, an APICAL-1 film with two sides coated with DLC is pasted on a reading electrode PCB by using Pre-preg, and then uniform well-type blind holes which are arranged in a hexagonal mode are etched on the APICAL-1 film to be used as an avalanche amplification area of the detector in the first layer. A pillar with the height of 250 microns is prepared on the upper surface of the avalanche amplification area of the first layer of detector, an APICAL-2 film with two sides coated with DLC is placed on the pillar, the DLC on the lower surface of the pillar is used as a resistive drift electrode of the first layer of detector, and the DLC on the upper surface of the pillar is used as a well-type bottom of the avalanche amplification area of the second layer of detector. Then, an APICAL-3 film coated with DLC on one side is placed on the APICAL-2 film so that the DLC coated side is far away from the APICAL-2 film. And etching holes in hexagonal arrangement on the APICL-3 film to serve as an avalanche amplification region of the second-layer detector. And sequentially preparing a third layer detector structure and a fourth layer detector structure. And finally, placing an APICAL-4 film with one side coated with DLC on a strut of the fourth-layer detector structure, so that the side coated with DLC is close to the avalanche amplification region of the fourth-layer detector and is used as a drift electrode of the fourth-layer detector.

The technical solution of the detector prepared according to the prior art mainly has the following disadvantages: first, since the key components are fabricated based on APICAL substrates with a thickness of 50 μm, the material is rather flexible and cannot be self-supporting. In order to ensure that the air gaps inside the detector maintain good uniformity, a strut is required to support the amplifying unit and the drift electrode at each air gap, which causes great difficulty in the installation and manufacture of the detector. Second, as the smallest ionized particles pass through the detector, primary ionization occurs in the drift region of each layer of the detector, producing primary electrons. The original electrons drift to an avalanche amplification region for avalanche amplification. From Ramo's theorem of sensing signals, due to the existence of the resistive electrode, a signal can be sensed on the readout electrode PCB when each layer of detector is subjected to avalanche amplification, and the amplitude of the sensing signal is proportional to H/D. Where H is the thickness of the electron avalanche region, 50 μm, and D is the total thickness of the detector. The total sensing signal amplitude is the sum of the individual sensing signals of the detectors of each layer on the readout electrode PCB. In order to ensure the detection efficiency of the detector, the thickness of the drift region of each layer of the detector is generally larger than 250 μm, so that the strength of the induction signal on the PCB is weak. At present, the amplitude of the sensing signal of the detector processed according to the prior art is so small that the reading electronics cannot distinguish the signal from the background noise, so that the prior art cannot be put into practical application at all.

BRIEF SUMMARY OF THE PRESENT DISCLOSURE

Technical problem to be solved

Based on the problems, the present disclosure provides a method for manufacturing a multi-air-gap fully-resistive blind hole type detector, so as to alleviate technical problems that in the prior art, a microstructure gas detector is difficult to manufacture, the amplitude of an induced signal is very small, so that readout electronics cannot distinguish between a signal and background noise, and cannot be put into practical application.

(II) technical scheme

The invention provides a method for manufacturing a multi-air-gap fully-resistive blind hole type detector, which comprises the following steps:

step S1: preparing a substrate material which comprises a reading electrode substrate, a through hole unit substrate, an air gap gasket, a flat electrode substrate and a drift electrode substrate;

step S2: preparing a readout electrode, a plate electrode, a drift electrode, and a through-hole unit using the substrate material prepared in step S1;

step S3: sequentially and alternately installing through hole unit areas and plate electrodes on the reading electrode until the reading electrode is installed to the Nth layer of through hole unit area, wherein N is more than or equal to 2, and obtaining a fully-resistive blind hole type amplification area; and

step S4: and (5) installing a drift electrode and a window above the fully-resistive blind hole type amplification region prepared in the step (S3) to finish the manufacture of the multi-air-gap fully-resistive blind hole type detector.

In the embodiment of the present disclosure, step S2 includes:

substep S21: preparing a DLC film on the upper surface of a reading electrode substrate to obtain a reading electrode;

substep S22: preparing DLC films on the upper and lower surfaces of the flat electrode substrate to obtain a flat electrode;

substep S23: preparing a DLC film on the lower surface of the drift electrode substrate to obtain a drift electrode; and

substep S24: and preparing a DLC film on the upper surface of the through hole unit substrate, and then manufacturing a small hole array to obtain the through hole unit.

In the disclosed embodiment, the upper surface DLC of the readout electrode has a thickness of 40nm to 1 μ M and a sheet resistivity of 10M Ω/□ to 2G Ω/□.

In the disclosed embodiment, the DLC thickness of the lower surface of the drift electrode is between 40nm and 1 μ M, and the surface resistivity is between 50M Ω/□ and 10G Ω/□.

In the disclosed embodiment, the DLC thickness of the upper and lower surfaces of the flat plate electrode is 40 nm-1 μ M, and the surface resistivity is 50M Ω/□ -10G Ω/□.

In the disclosed embodiment, the upper surface DLC thickness of the through hole unit is between 40nm and 1 μm; the surface resistivity is 50M omega/□ -10G omega/□.

In the embodiment of the disclosure, the aperture of the small holes in the small hole array in the through hole unit is between 0.2mm and 0.8mm, and the distance between the small holes is between 0.4mm and 1.6 mm.

In the embodiment of the present disclosure, step S3 includes:

substep S31: mounting a positioning pin on the reading electrode;

substep S32: installing a first layer of through hole unit area on the reading electrode through a positioning pin;

substep S33: mounting a first layer of flat plate electrodes on the first layer of through hole unit area; and

substep S34: and continuously installing a second layer of through hole unit area and a second layer of flat plate electrode on the first layer of flat plate electrode until the second layer of through hole unit area is installed to the Nth layer of through hole unit area, and finishing the preparation of the fully-resistive blind hole type amplification area.

In the embodiment of the disclosure, the through hole unit substrate is a double-layer plate with a thickness of 0.15 mm-0.8 mm.

In the disclosed embodiment, the air gap spacer is between 0.2mm and 1mm thick.

(III) advantageous effects

According to the technical scheme, the manufacturing method of the multi-air-gap fully-resistive blind hole type detector at least has one or part of the following beneficial effects:

(1) under the condition of effectively reducing the thickness of the air gap of each layer of drift region, the fluctuation of ionization time of incident particles in the detector can be effectively reduced under the premise of keeping high gain, high counting rate and high position resolution of the detector, and the high time resolution performance is realized;

(2) each layer of detector can generate a sensing signal on the reading plate;

(3) the thickness of the avalanche region is increased, so that the gain of the detector is improved, the induction signal amplitude of the detector is improved, and the induction signal intensity is greatly enhanced;

(4) the PCB substrate has the advantages of high hardness, capability of effectively carrying out self-supporting and the like, and can greatly simplify the design, installation and manufacture of the detector.

Drawings

Fig. 1 is a schematic cross-sectional view of a prior art four-layer FTM probe.

Fig. 2 is a schematic partial cross-sectional structure diagram of a multi-air-gap fully-resistive blind hole detector according to an embodiment of the present disclosure.

Fig. 3 is an exploded perspective view of a multi-air-gap fully-resistive blind hole detector according to an embodiment of the disclosure.

Fig. 4 is a schematic flow chart of a method for manufacturing a multi-air-gap fully-resistive blind hole detector according to an embodiment of the present disclosure.

[ description of main reference numerals in the drawings ] of the embodiments of the present disclosure

1-a readout electrode;

2-a drift electrode;

3-a via cell region;

31-a via cell;

32-air gap spacer;

4-plate electrode.

Detailed Description

The invention provides a method for manufacturing a multi-air-gap full-resistance blind hole type detector, which enables the manufactured detector to have enough gain and can simultaneously realize high counting rate, high position resolution and high time resolution performance; in addition, the method can greatly simplify the processing and manufacturing process of the detector and reduce the manufacturing cost of the detector. Therefore, the method for manufacturing the multi-air-gap-based fully-resistive blind hole type detector can effectively overcome the defects of the prior art scheme, and provides technical support for the application of the microstructure gas detector in a new generation of collider experiment.

In the embodiment of the present disclosure, as shown in fig. 2 and fig. 3, the structure of the detector includes, from bottom to top, a readout electrode 1, a fully resistive blind hole type amplification structure region, and a drift electrode 2.

The fully resistive blind hole type amplification area comprises a plurality of layers of through hole unit areas 3 and a flat plate electrode 4 positioned between the upper and lower adjacent through hole unit areas 3. Each layer of via unit area 3 includes a via unit 31 and an air gap pad 32 thereon. And DLC films are arranged on the upper surface and the lower surface of the flat plate electrode 4. The upper surface of the through hole unit 31 is a DLC film and is provided with a densely arranged small hole array.

Each through-hole cell 31 forms a drift region with the plate electrode 4 above it, wherein the voltage difference between the DLC on the lower surface of the plate electrode 4 above the through-hole cell 31 and the DLC on the upper surface of the through-hole cell 31 is the drift region operating voltage. The air gap spacer pad is used to provide an air gap for the drift region.

Each through-hole unit 31 forms an amplifying unit with the plate electrode 4 therebelow having a blind hole type, wherein a voltage difference between the DLC on the upper surface of the through-hole unit 31 and the DLC on the upper surface of the plate electrode 4 therebelow is an amplifying unit operating voltage having a blind hole.

Thus, each layer of the through-hole unit 31, the DLC film on the lower surface of the plate electrode 4 positioned on the through-hole unit 31, and the DLC film on the upper surface of the plate electrode 4 positioned below the through-hole unit 31 constitute an independent amplifying structure of the fully resistive blind type. Since the first layer of through-hole units 31 is close to the readout electrode PCB, a separate plate electrode 4 is not needed to form a blind hole, and the amplification units with the blind holes can be formed by directly sitting on the DLC on the upper surface of the readout electrode PCB. The drift electrode 2 located at the top of the top layer, which has a copper electrode in the middle layer, because a metal electrode is needed to provide the power field necessary for generating the sensing signal together with the readout electrode; further, since the drift electrode of the uppermost (shown nth) through-hole cell 31 is located above all layers, only the lower surface of the drift electrode 2 needs to have DLC.

For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.

In an embodiment of the present disclosure, a method for manufacturing a multi-air-gap fully-resistive blind hole type detector is provided, which is shown in fig. 2 to 3, and includes:

step S1: preparing a substrate material which comprises a reading electrode substrate, a through hole unit substrate, an air gap gasket, a flat electrode substrate and a drift electrode substrate;

and preparing a reading electrode, a through hole unit substrate, an air gap gasket, a flat electrode substrate and a drift electrode substrate by using a universal PCB (printed circuit board) process. The reading electrode PCB is a multilayer board, the shape of the reading electrode can be strip-shaped or Pad-shaped according to application requirements, and the electrode is positioned in the middle layer of the PCB. The through hole unit substrate is a double-layer plate with the thickness of 0.15-0.8 mm and is used for manufacturing the through hole unit. The air gap gasket PCB is a 0-layer board, namely, no metal exists on the PCB board, and the air gap gasket PCB is only used for providing a specific air gap thickness, and the thickness of the air gap gasket is between 0.2mm and 1 mm. The flat electrode substrate PCB is a double-layer board with the thickness of 0.15 mm-1 mm. The drift electrode substrate PCB is a multilayer board, and the copper electrode can be positioned in the middle layer of the PCB and has the thickness of 0.15-1 mm.

The effective area of the readout electrode is 5cm × 5cm, and stripe or Pad-like readout can be adopted according to application requirements, and two-dimensional stripe readout is preferred in this embodiment, and the stripe interval is 400 μm. The thickness of the through-hole unit substrate is preferably 0.4 mm. The air gap spacer is preferably 0.2 mm. The thickness of the plate electrode substrate PCB is preferably 0.2 mm. The drift electrode substrate is preferably 0.2mm thick with the copper electrode in the middle layer of the PCB.

Step S2: preparing a readout electrode 1, a plate electrode 4, a drift electrode 2, and a via unit 31 using the base material prepared in step S1;

step S2 includes:

substep S21: preparing a DLC film on the upper surface of a reading electrode substrate to obtain a reading electrode 1;

substep S22: preparing DLC films on the upper and lower surfaces of the plate electrode substrate to obtain a plate electrode 4;

substep S23: preparing a DLC film on the lower surface of the drift electrode substrate to obtain a drift electrode 2;

substep S24: after a DLC film was prepared on the upper surface of the through-hole unit substrate, an array of small holes was formed to obtain through-hole units 31.

And depositing a resistive DLC film on the upper surface of the reading electrode substrate, the upper surface of the through hole unit substrate, the upper surface and the lower surface of the flat electrode substrate and the lower surface of the drift electrode substrate by a magnetron sputtering method. The DLC film has a thickness of 40nm to 1 μm, and the surface resistivity is determined according to different application requirements, and DLC with different surface resistivity can be obtained by modifying parameters in the magnetron sputtering preparation process, such as at least one of the vacuum degree of a cavity, target current, doping or deposition time. The upper surface DLC of the read electrode 1 has a thickness of 40nm to 1 μ M, preferably 400nm, and a sheet resistivity of 10 M.OMEGA./□ to 2 G.OMEGA./□, preferably 140 M.OMEGA./□. The DLC thickness of the upper surface of the through-hole unit substrate is 40 nm-1 μ M, preferably 400nm, and the surface resistivity is 50M omega/□ -10G omega/□, preferably 1G omega/□. The DLC thickness on the upper and lower surfaces of the plate electrode substrate and the lower surface of the drift electrode substrate is 40nm to 1 μ M, preferably 400nm, and the surface resistivity is 50 M.OMEGA./□ to 10 G.OMEGA./□, preferably 2 G.OMEGA./□.

And (3) returning the through hole unit substrate plated with the DLC to a PCB factory, and manufacturing a hexagonal close-packed small hole array in an area deposited with the DLC by using a mechanical drilling mode, wherein the aperture of each small hole is 0.2-0.8 mm, preferably 0.5mm, and the distance between the small holes is 0.4-1.6 mm, preferably 1mm according to application requirements.

Step S3: sequentially and alternately installing through hole unit areas 3 and plate electrodes 4 on the reading electrode 1 until the reading electrode is installed to the N (N is more than or equal to 2) th layer of through hole unit areas 3 to obtain a fully-resistive blind hole type amplification area;

and (3) putting all the parts obtained in the steps into alcohol for ultrasonic cleaning for 10-20 minutes, then wiping the surface with dust-free cloth, and putting all the parts into an oven for drying, wherein the temperature of the oven is set to be 70 ℃.

The step S3 includes:

substep S31: a positioning needle is arranged on the reading electrode 1;

the read plate of the read electrode 1 is fixed and then a positioning pin is mounted on the read plate positioning hole as shown in fig. 3.

Substep S32: mounting a first layer of through hole unit area 3 on the reading electrode 1 through a positioning needle;

the first layer of through hole units 31 are installed above the readout board through positioning pins, and a first layer of through hole unit area 3 is obtained after installing a first layer of air gap gaskets 32 at the edges of the first layer of through hole units 31. And then installing a first layer of air gap gasket 32 at the upper edge of the first layer of amplifying unit through the positioning pin to provide a drift region air gap for the first layer of amplifying region, thereby completing the preparation of the first layer of through hole unit region 3.

The air gap spacer can be mounted in one or more stacks according to the application requirements, specifically according to the thickness of the air gap spacer 32 and the air gap thickness required by the application; in the present embodiment, the preferred air gap spacer 32 is 5 pieces, and the thickness of the air gap is 1 mm.

Substep S33: mounting a first layer of flat plate electrodes 4 on the first layer of through hole unit areas 3;

installing a first layer of flat plate electrodes 4 on the air gap gasket 32 of the first layer of through hole unit area 3 through a positioning pin;

substep S34: continuously installing a second layer of through hole unit area 3 and a second layer of flat plate electrode 4 on the first layer of flat plate electrode 4 until the second layer of through hole unit area 3 is installed to the Nth layer of through hole unit area 3, and finishing the preparation of the fully-resistive blind hole type amplification area;

in the embodiment of the present disclosure, the fully resistive blind via amplification area includes four layers of through hole unit areas 3 and three layers of plate electrodes, and the installation of the remaining three layers of through hole unit areas 3 is completed until the installation of the air gap gasket 32 of the topmost through hole unit area 3 is completed, so as to obtain the fully resistive blind via amplification area.

Step S4: and (5) preparing a drift electrode 2 on the fully-resistive blind hole type amplification area prepared in the step (S3) to finish the manufacture of the multi-air-gap fully-resistive blind hole type detector.

Mounting the drift electrode 2 above the air gap pad 32 of the uppermost through-hole unit 31; then, other conventional components (all components above the through hole unit 31 on the uppermost layer) such as an air frame, a window, a high-voltage connector and the like of the detector are installed, and the manufacturing of the multi-air-gap full-resistance blind hole type detector is completed, as shown in fig. 3.

So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.

From the above description, those skilled in the art should clearly understand the method for manufacturing the multi-air-gap fully resistive blind hole type detector of the present disclosure.

In summary, the present disclosure provides a method for manufacturing a multi-air-gap fully-resistive blind hole detector, which combines advantages of a thick electron multiplier and a multi-air-gap resistive plate chamber, fully utilizes the advantages of the thick electron multiplier, and adopts a resistive electrode technology and a multilayer structure under the condition of effectively reducing the air-gap thickness of a drift region, so that the detector can effectively reduce the fluctuation of the ionization time of incident particles in the detector on the premise of maintaining high gain, high counting rate and high position resolution, thereby achieving high time resolution performance. The technology adopts a full-resistance electrode scheme, and all electrodes positioned between the drift electrode 2 and the reading electrode 1 in the detector adopt diamond-like carbon based film resistance electrodes, so that each layer of detector can generate induction signals on the reading plate. Compared with the FTM technical scheme provided by CERN, the technical scheme is based on the PCB substrate, the thickness of the avalanche region is increased, the gain of the detector is improved, the induction signal amplitude of the detector is improved, the induction signal intensity is greatly enhanced, and the sparking resistance is strong. In addition, due to the advantages of high hardness of the PCB substrate, effective self-supporting and the like, the design, installation and manufacture of the detector can be greatly simplified. Meanwhile, high gain, high counting rate and high position resolution can be kept, and high time resolution can be realized at the same time.

It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.

And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.

Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.

Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.

The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.

In addition, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments.

Those skilled in the art will appreciate that the modules in the device in an embodiment may be adaptively changed and disposed in one or more devices different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. Also in the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware.

Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.

The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.