阅读说明：本技术 一种陶瓷pcb基板的快速等离子烧结制备方法 (Rapid plasma sintering preparation method of ceramic PCB substrate ) 是由 贝国平 于 2019-06-19 设计创作，主要内容包括：本发明涉及一种利用等离子烧结技术(SPS)制备新型陶瓷PCB基板的快速制备方法。通过在氧化物陶瓷中如氧化铝(Al2O3),氧化锆ZrO2-3％Y2O3(3YSZ)材料添加氧化铜(CuO或者Cu2O)2～8wt.％,快速烧结在低温下制备Al2O3-氧化铜,ZrO2-3％Y2O3-氧化铜复合材料陶瓷PCB基板。本发明成本低,制备工艺简单,周期短。本发明应用于电子材料领域和大规模集成电路领域。(The invention relates to a rapid preparation method for preparing a novel ceramic PCB substrate by using a plasma sintering technology (SPS). The Al2O 3-copper oxide and ZrO 2-3% Y2O 3-copper oxide composite material ceramic PCB substrate is prepared by adding 2-8 wt.% of copper oxide (CuO or Cu2O) to an oxide ceramic such as alumina (Al2O3), zirconia ZrO 2-3% Y2O3(3YSZ) material and performing rapid sintering at a low temperature. The invention has low cost, simple preparation process and short period. The invention is applied to the field of electronic materials and the field of large-scale integrated circuits.)

1. A rapid preparation method for preparing a ceramic PCB substrate by using a plasma sintering technology (SPS) is characterized in that 2-8 wt.% of copper oxide is added into oxide ceramic such as aluminum oxide (Al2O3) and zirconium oxide ZrO 2-3% Y2O3, and the Al2O 3-copper oxide and ZrO 2-3% Y2O 3-copper oxide composite material ceramic PCB substrate is prepared by rapid sintering at a low temperature.

2. The method of claim 1, wherein the oxide ceramic material in the PCB substrate is an alumina or yttria stabilized zirconia ceramic material.

3. The method of claim 1, wherein the activating factor in the PCB substrate is copper oxide (CuO or Cu 2O).

4. The manufacturing method of claim 1, wherein the manufacturing technique of the PCB substrate is a plasma sintering technique.

5. The preparation method according to claim 4, wherein the plasma sintering technique is characterized in that the uniformly mixed powder is filled into a graphite mold for plasma sintering, sintering is carried out at a temperature of 1000-1400 ℃ under vacuum or atmosphere protection, the temperature rise rate is 50-200 ℃/min, and the temperature is kept for 5-10 minutes under the pressure of 30-50 MPa. And after the heat preservation and pressure preservation are finished, cooling to room temperature at a cooling speed of 5-30 ℃ per minute, and demolding to obtain the copper oxide-containing oxide ceramic PCB substrate.