阅读说明：本技术 感光性组合物及其制备方法、图案形成方法、应用 (Photosensitive composition, preparation method thereof, pattern forming method and application ) 是由 钱晓春 胡春青 龚艳 于 2020-01-15 设计创作，主要内容包括：本发明属于光刻技术领域,具体涉及一种感光性组合物及其制备方法、图案形成方法、应用。其中感光性组合物包括以下原料：树脂组分和磺酸酯光酸产生剂。能够用于碱显影液溶解曝光的正型感光性组合物,形成具有优异的分辨率、灵敏度和良好对比度的图案。(The invention belongs to the technical field of photoetching, and particularly relates to a photosensitive composition, a preparation method thereof, a pattern forming method and application. Wherein the photosensitive composition comprises the following raw materials: a resin component and a sulfonate photoacid generator. A positive photosensitive composition which can be used for dissolution exposure with an alkali developing solution and can form a pattern having excellent resolution, sensitivity and good contrast.)

1. A photosensitive composition comprising the following raw materials:

a resin component and a sulfonate photoacid generator.

2. The photosensitive composition according to claim 1,

the resin component includes a resin having an acidic group protected by a protecting group;

the acidic group comprises at least one of carboxyl and phenolic hydroxyl; and

the content of the acid groups accounts for 1-80% of the content of the resin component.

3. The photosensitive composition according to claim 2,

the formula of the protecting group comprises:

at least one of; wherein

R₃、R₄、R₅All represent to have C₁-C₆Straight-chain/branched alkyl or having C₁-C₁₀Linear/branched fluorinated alkyl; and R₃、R₄、R₅Any two of which are adapted to bond to each other to form a ring;

R₆，R₇、R₈all represent to have C₁-C₂₀A hydrocarbon group of (a); r₆、R₇、R₈Any two of which are adapted to bond to each other to form a ring;

R₉is represented by having C₁-C₆And n is 0 or 1.

4. The photosensitive composition according to claim 1,

the sulfonate photoacid generator comprises: the benzene imide sulfonic acid ester has a structural formula as follows:

wherein

R₁Is represented by C₁-C₂₀Linear/branched alkyl or fluoroalkyl,C₆-C₁₈Is substituted or unsubstituted aryl, or camphoryl;

l denotes C₄-C₁₈N, S or O containing heterocyclic group;

R₂represents any one of the following groups: halogen, phenyl, C₇-C₁₀Phenylalkyl of R₁′-CO-、R₂′-CO-O-R₃′-、C₂-C₆Linear/branched alkenyl of (2), and (C)₆-C₁₀Aryl of (A) is end-capped C₂-C₄Alkenyl of, C₂-C₆Straight chain/branched alkynyl of (2), C₆-C₁₀Aryl of (A) is end-capped C₂-C₄Alkynyl of (A), C₁-C₆Alkyl sulfonyloxy of, C₆-C₁₀Arylsulfonyloxy of (a); and R₁' represents C₁-C₆Alkyl or phenyl of R₂' represents C₁-C₈Alkyl or phenyl of R₃' represents C₃-C₄Alkynyl or none of (a).

5. The photosensitive composition according to claim 1,

the photosensitive composition further comprises the following raw materials: an aromatic carboxylic acid compound;

the aromatic carboxylic acid compound includes: at least one of a low molecular aromatic carboxylic acid compound and a high molecular aromatic carboxylic acid compound; wherein

The low molecular aromatic carboxylic acid compound comprises a monocarboxylic acid compound and a polycarboxylic acid compound with at least two carboxyl groups and/or substituents;

the polymer aromatic carboxylic acid compound includes a polymer compound containing a carboxyl group and an unsaturated double bond bonded to an aromatic group.

6. The photosensitive composition according to claim 1,

the photosensitive composition further comprises the following raw materials: a bridging group compound;

the bridging compound contains at least two different types of crosslinking groups;

the crosslinking group comprises an epoxy group, an oxetanyl group;

the bridging group compound comprises: bridging group low molecular compounds and bridging group high molecular compounds; wherein the bridging group low-molecular compound comprises: at least one of a bifunctional or higher polyfunctional epoxy compound, a polyoxetane compound, a vinyl group-containing polymerizable monomer;

the bridging group polymer compound includes: at least one of epoxy group-containing resin and unsaturated double bond-containing resin.

7. A method for producing a photosensitive composition, comprising:

the resin component and the sulfonate photoacid generator are mixed and uniformly dissolved in a solvent to obtain the photosensitive composition.

8. A pattern forming method, comprising:

coating the photosensitive composition on a carrier, and pre-baking to form a coating film;

selectively exposing part or all of the coating film;

heating after exposure; and

the exposed coating film is developed with an alkaline developer.

9. An application of a photosensitive composition in a protective film of an electronic component.

10. An application of photosensitive composition in interlayer insulating material of electronic component.

11. The application of a photosensitive composition in a pattern transfer material of an electronic component.

Technical Field

The invention belongs to the technical field of photoetching, and particularly relates to a photosensitive composition, a preparation method thereof, a pattern forming method and application.

Background

The photolithography technique refers to a technique of forming a resist film made of a resist material, coating and molding the resist film on a substrate, selectively exposing the resist film to radiation of light or electron beams through a mask on which a predetermined pattern is formed, and then performing a developing process to form a resist pattern having a predetermined shape on the resist film. A resist material in which an exposed portion is changed to be dissolved in a developer is called a positive type, and a resist material in which an exposed portion is changed to be insoluble in a developer is called a negative type.

As a result, it is required that the resist composition be improved in lithographic characteristics to have high sensitivity to the exposure light source and resolution for formation of fine-sized patterns as well as reproducibility of the lithographic characteristics such as a F2 excimer laser, an electron beam, EUV (extreme ultraviolet) and X-rays, which have been shorter in wavelength than these excimer lasers.

However, such positive resist compositions are still required to be further improved in terms of miniaturization technology, such as adjustment of sensitivity and resolution in resist pattern formation, and adjustment of contrast of a formed pattern.

Disclosure of Invention

The invention aims to provide a photosensitive composition, a preparation method thereof, a pattern forming method and application.

In order to solve the above technical problems, the present invention provides a photosensitive composition comprising the following raw materials: a resin component and a sulfonate photoacid generator.

Further, the resin component includes a resin having an acidic group protected by a protecting group; the acidic group comprises at least one of carboxyl and phenolic hydroxyl; and the content of the acid groups accounts for 1 to 80 percent of the content of the resin component.

Further, the formula of the protecting group includes:

at least one of; wherein R is₃、R₄、R₅All represent to have C₁-C₆Straight-chain/branched alkyl or having C₁-C₁₀Linear/branched fluorinated alkyl; and R₃、 R₄、R₅Any two of which are adapted to bond to each other to form a ring; r₆，R₇、R₈All represent to have C₁-C₂₀A hydrocarbon group of (a); r₆、R₇、R₈Any two of which are adapted to bond to each other to form a ring; r₉Is represented by having C₁-C₆And n is 0 or 1.

Further, the sulfonate photoacid generator comprises: the benzene imide sulfonic acid ester has a structural formula as follows:

wherein R is₁Is represented by C₁-C₂₀Linear/branched alkyl or fluoroalkyl, C₆-C₁₈Is substituted or unsubstituted aryl, or camphoryl;

l denotes C₄-C₁₈N, S or O containing heterocyclic group;

R₂represents any one of the following groups: halogen, phenyl, C₇-C₁₀Phenylalkyl of R₁′-CO-、 R₂′-CO-O-R₃′-、C₂-C₆Linear/branched alkenyl of (2), and (C)₆-C₁₀Aryl of (A) is end-capped C₂-C₄Alkenyl of, C₂-C₆Straight chain/branched alkynyl of (2), C₆-C₁₀Aryl of (A) is end-capped C₂-C₄Alkynyl of (A), C₁-C₆Alkyl sulfonyloxy of, C₆-C₁₀Arylsulfonyloxy of (a); and R₁' represents C₁-C₆Alkyl or phenyl of R₂' represents C₁-C₈Alkyl or phenyl of R₃' represents C₃-C₄Alkynyl or none of (a).

Further, the photosensitive composition further comprises the following raw materials: an aromatic carboxylic acid compound comprising: at least one of a low molecular aromatic carboxylic acid compound and a high molecular aromatic carboxylic acid compound; wherein the low molecular aromatic carboxylic acid compound comprises a monocarboxylic acid compound, a polycarboxylic acid compound of at least two carboxyl groups and/or substituents; the polymer aromatic carboxylic acid compound includes a polymer compound containing a carboxyl group and an unsaturated double bond bonded to an aromatic group.

Further, the photosensitive composition further comprises the following raw materials: a bridging group compound; the bridging compound contains at least one crosslinking group; and the crosslinking group comprises an epoxy group, an oxetane group; the bridging group compound comprises: bridging group low molecular compounds and bridging group high molecular compounds; wherein the bridging group low-molecular compound comprises: at least one of a bifunctional or higher polyfunctional epoxy compound, a polyoxetane compound, a vinyl group-containing polymerizable monomer; the bridging group polymer compound includes: at least one of epoxy group-containing resin and unsaturated double bond-containing resin.

In another aspect, the present invention also provides a method for preparing a photosensitive composition, comprising: the resin component and the sulfonate photoacid generator are mixed and uniformly dissolved in a solvent to obtain the photosensitive composition.

In a third aspect, the present invention also provides a pattern forming method comprising: coating the photosensitive composition on a carrier, and pre-baking to form a coating film; selectively exposing the coating film and baking; and developing the exposed coating film with an alkaline developer.

In a fourth aspect, the invention also provides an application of the photosensitive composition in a protective film of an electronic component.

In a fifth aspect, the invention also provides an application of the photosensitive composition in an interlayer insulating material of an electronic component.

In a sixth aspect, the invention also provides a use of the photosensitive composition in a pattern transfer material for an electronic component.

The positive photosensitive composition can be used for dissolving exposure of an alkali developing solution by mixing a resin component and a sulfonate photoacid generator, and can form a pattern with excellent resolution, sensitivity and contrast.

Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.

In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.

Fig. 1 is a process flow diagram of a pattern forming method of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.