阅读说明：本技术 一种led显示面板及led显示器 (LED display panel and LED display ) 是由 江仁杰 徐瑞林 钟光韦 张嘉修 苏财钰 于 2020-03-25 设计创作，主要内容包括：本发明提供了一种LED显示面板及LED显示器,包括设置有LED阵列的显示背板,LED阵列包括并排设置的LED芯片；LED芯片包括垂直出射型发光芯片和倾斜出射型发光芯片；LED阵列的内部设置有垂直出射型发光芯片,垂直出射型发光芯片所发出的主光线的朝向垂直于显示背板的方向；LED阵列的边缘设置有倾斜出射型发光芯片,倾斜出射型发光芯片所发出的主光线的朝向远离显示背板的几何中心的方向。在LED阵列的内部设置有垂直出射型发光芯片,而在LED阵列的边缘设置有倾斜出射型发光芯片,通过倾斜出射型发光芯片所发出朝向远离显示背板几何中心方向的主光线,在相邻的LED显示面板之间形成聚光效应,从而避免相邻的LED显示面板之间产生暗纹,提升整体的显示效果。(The invention provides an LED display panel and an LED display, comprising a display back plate provided with an LED array, wherein the LED array comprises LED chips arranged side by side; the LED chip comprises a vertical emergent light-emitting chip and an inclined emergent light-emitting chip; a vertical emergent light-emitting chip is arranged in the LED array, and the direction of a main ray emitted by the vertical emergent light-emitting chip is vertical to the direction of the display back plate; the edge of the LED array is provided with an inclined emission type light-emitting chip, and the direction of a principal ray emitted by the inclined emission type light-emitting chip is far away from the geometric center of the display backboard. The vertical emergent light-emitting chips are arranged in the LED array, the inclined emergent light-emitting chips are arranged at the edges of the LED array, and the main light rays which are emitted by the inclined emergent light-emitting chips and face away from the geometric center direction of the display backboard form a light condensation effect between the adjacent LED display panels, so that dark stripes generated between the adjacent LED display panels are avoided, and the overall display effect is improved.)

1. The utility model provides a LED display panel, includes the display backplate, be provided with the LED array on the display backplate, the LED array includes a plurality of LED chips, its characterized in that:

the LED chip comprises a vertical emergent light-emitting chip and an inclined emergent light-emitting chip;

at least one vertical emergent light-emitting chip is arranged in the LED array, and the direction of a main light ray emitted by the vertical emergent light-emitting chip is perpendicular to the direction of the display back plate;

at least one inclined emission type light emitting chip is arranged at the edge of the LED array, and the direction of a principal ray emitted by the inclined emission type light emitting chip is far away from the geometric center of the display backboard.

2. The LED display panel of claim 1, wherein: the display back plate is of a rectangular plate-shaped structure, the LED array is arranged on the display back plate, and the edges of the LED array are positioned on four side edges of the display back plate;

the oblique emission type light emitting chip is arranged on at least one side edge of the display back plate.

3. The LED display panel of claim 1, wherein: the display back plate comprises a substrate, a circuit layer and a planarization layer which are sequentially arranged; a plurality of first contact electrodes and second contact electrodes are arranged on the planarization layer;

the vertical emission type light-emitting chip and the inclined emission type light-emitting chip are vertical LED chips, and each of the vertical emission type light-emitting chip and the inclined emission type light-emitting chip comprises a first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer and a second electrode which are sequentially stacked;

the vertical emission type light emitting chip and the inclined emission type light emitting chip are both arranged on the planarization layer, and a first electrode and a second electrode of the LED chip are respectively welded with the first contact electrode and the second contact electrode.

4. The LED display panel of claim 3, wherein: the first semiconductor layer, the light emitting layer and the second semiconductor layer form a first side face and a second side face which are oppositely arranged;

in the vertical emission type light emitting chip, the first side surface is a straight plane, the second side surface is a straight plane or an inclined plane, and a principal ray of the vertical emission type light emitting chip is emitted from the first side surface;

in the oblique emission type light emitting chip, the first side surface is a straight plane, the second side surface is an oblique plane, and a principal ray of the oblique emission type light emitting chip is emitted from the second side surface.

5. The LED display panel of claim 4, wherein: in the vertical emergent light-emitting chip, the side surface deviating from the display back plate is a straight plane, and the straight plane is parallel to the surface of the display back plate;

in the inclined emission type light emitting chip, a side facing away from the display back plate is an inclined plane, and the inclined plane is inclined to a side edge of the display back plate.

6. The LED display panel of claim 5, wherein: a groove is formed in the planarization layer, the groove is formed between the first contact electrode and the second contact electrode, and the epitaxial portion of the LED chip is arranged in the groove;

a gap is formed between the LED chip and the bottom of the groove.

7. The LED display panel of claim 6, wherein: the vertical emission type light emitting chip and the inclined emission type light emitting chip are LED chips with the same size and model.

8. The LED display panel of claim 3, wherein: the circuit layer comprises a buffer layer, a grid insulating layer and an interlayer insulating layer; the buffer layer is arranged on the substrate, and the planarization layer is arranged on the interlayer insulating layer;

thin film transistors are further arranged in the circuit layer and correspond to the LED chips one to one;

the thin film transistor comprises an active layer, a grid electrode, a source electrode and a drain electrode, wherein the source electrode and the drain electrode are respectively connected with the active layer, and the thin film transistor is connected with the LED chip through the drain electrode;

the grid insulating layer is used for isolating the grid electrode on the thin film transistor from the active layer;

the interlayer insulating layer is used for isolating the source electrode and the grid electrode on the thin film transistor and isolating the drain electrode and the grid electrode on the thin film transistor.

9. The LED display panel of claim 8, wherein: a power supply grounding wire is arranged in the circuit layer; the first contact electrode is connected with a drain electrode on the thin film transistor, the second contact electrode is connected with the power grounding wire, and the first contact electrode and the second contact electrode are also respectively connected with a first electrode and a second electrode of the LED chip.

10. An LED display, characterized by: the LED display is formed by splicing at least two LED display panels in any one of the claims 1-9;

in the adjacent LED display panels, the chief ray emitted by the inclined emission type light emitting chip on the first LED display panel and the chief ray emitted by the inclined emission type light emitting chip on the second LED display panel are mutually staggered.

Technical Field

The invention relates to the technical field of light emitting diode preparation and the technical field of LED display screen preparation, in particular to an LED display panel and an LED display capable of eliminating dark stripes.

Background

LEDs, i.e., light emitting diodes, emit light by energy released by electron and hole recombination, can efficiently convert electrical energy into light energy, have multiple advantages of small size, rich color, low energy consumption, long service life, etc., and are considered as a next generation of novel solid-state light sources that enter the general illumination field. The LED display manufactured based on the LED has the advantages of high stability, long service life, low operation temperature and the like, simultaneously has the advantages of low power consumption, color saturation, high reaction speed, high contrast ratio and the like of the LED, and has great application prospect.

Generally, an LED display is formed by splicing a plurality of LED display panels. The LED display panel comprises a display area and a peripheral area, wherein the display area comprises LED chips arranged in an array, and the peripheral area comprises a plurality of driving circuits, driving chips and the like. The LED display panel is limited by the structure, the edge part of the LED display panel can not be provided with the LED chip, but a certain blank area is reserved, when two adjacent LED display panels are spliced together, the blank area can lead to dark stripes generated between the adjacent LED display panels in vision, and the whole display effect is influenced.

Accordingly, the prior art is yet to be improved and developed.

Disclosure of Invention

The present invention provides an LED display panel and an LED display, which can ensure that no dark lines are generated between adjacent LED display panels, and improve the overall display effect.

The technical scheme adopted by the invention for solving the technical problem is as follows:

an LED display panel comprises a display back plate, wherein an LED array is arranged on the display back plate and comprises a plurality of LED chips;

the LED chip comprises a vertical emergent light-emitting chip and an inclined emergent light-emitting chip;

at least one vertical emergent light-emitting chip is arranged in the LED array, and the direction of a main light ray emitted by the vertical emergent light-emitting chip is perpendicular to the direction of the display back plate;

at least one inclined emission type light emitting chip is arranged at the edge of the LED array, and the direction of a principal ray emitted by the inclined emission type light emitting chip is far away from the geometric center of the display backboard.

Compared with the prior art, the technical scheme has the beneficial effects that: the vertical emergent light-emitting chips are arranged in the LED array, the inclined emergent light-emitting chips are arranged at the edges of the LED array, and the main light rays which are emitted by the inclined emergent light-emitting chips and face away from the geometric center direction of the display backboard form a light condensation effect between the adjacent LED display panels, so that dark stripes generated between the adjacent LED display panels are avoided, and the overall display effect is improved.

Further, the display back plate is of a rectangular plate-shaped structure, the LED array is arranged on the display back plate, and the edges of the LED array are located on four side edges of the display back plate;

the oblique emission type light emitting chip is arranged on at least one side edge of the display back plate.

The beneficial effect who adopts above-mentioned scheme is: according to the position of the display back plate, inclined emission type light-emitting chips are optionally arranged on one or more side edges of the display back plate, so that the display effect of the LED display formed by splicing the LED display panels is better.

Further, the display back plate comprises a substrate, a circuit layer and a planarization layer which are sequentially arranged, wherein the circuit layer is arranged on the substrate, and the planarization layer is arranged on the circuit layer; a plurality of first contact electrodes and second contact electrodes are arranged on the planarization layer;

the vertical emission type light-emitting chip and the inclined emission type light-emitting chip are vertical LED chips, and each of the vertical emission type light-emitting chip and the inclined emission type light-emitting chip comprises a first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer and a second electrode which are sequentially stacked;

the vertical emission type light emitting chip and the inclined emission type light emitting chip are both arranged on the planarization layer, and a first electrode and a second electrode of the LED chip are respectively welded with the first contact electrode and the second contact electrode.

The beneficial effect who adopts above-mentioned scheme is: the back plate substrate plays a structural supporting role, the circuit layer plays an electric connection role, and the outer layer surface of the LED display panel tends to be flat more through the planarization layer. The LED chip is respectively connected with the first contact electrode and the second contact electrode through the first electrode and the second electrode on the LED chip, so that the electric connection is realized.

Further, the first semiconductor layer, the light emitting layer and the second semiconductor layer form a first side face and a second side face which are oppositely arranged;

in the vertical emission type light emitting chip, the first side surface is a straight plane, the second side surface is a straight plane or an inclined plane, and a principal ray of the vertical emission type light emitting chip is emitted from the first side surface;

in the oblique emission type light emitting chip, the first side surface is a straight plane, the second side surface is an oblique plane, and a principal ray of the oblique emission type light emitting chip is emitted from the second side surface.

The beneficial effect who adopts above-mentioned scheme is: in the inclined emission type light-emitting chip, light rays are emitted through an inclined plane, and the emitting direction of the main light rays of the LED chip is changed; in the vertical emission type light emitting chip, the second side surface can be set to be an inclined plane, so that the production cost is reduced.

Further, in the vertical emission type light emitting chip, a side surface facing away from the display back plate is a straight plane, and the straight plane is parallel to the surface of the display back plate;

in the inclined emission type light emitting chip, a side facing away from the display back plate is an inclined plane, and the inclined plane is inclined to a side edge of the display back plate.

Further, the vertical emission type light emitting chip and the inclined emission type light emitting chip are LED chips of the same size and model.

The beneficial effect who adopts above-mentioned scheme is: the LED chips with the same size and the same type are used as the vertical emitting type light-emitting chip and the inclined emitting type light-emitting chip, only one LED chip needs to be arranged on one LED display panel, and the production cost is reduced.

Further, a groove is arranged on the planarization layer, the groove is arranged between the first contact electrode and the second contact electrode, and the epitaxial portion of the LED chip is arranged in the groove;

a gap is formed between the LED chip and the bottom of the groove.

The beneficial effect who adopts above-mentioned scheme is: the LED display panel is characterized in that the flattening layer is provided with a groove, and the LED chips are arranged on the display back plate through the groove, so that the structure of the LED display panel is firmer, and the LED display panel is simultaneously beneficial to arranging the LED chips into an LED array according to a set pattern. In addition, the depth of the groove is properly deepened, so that a gap is formed between the LED chip and the bottom of the groove, and other devices on the LED display panel are prevented from being damaged by pressure when the LED chip is installed.

Further, the circuit layer comprises a buffer layer, a gate insulating layer and an interlayer insulating layer;

the buffer layer is disposed on the substrate, and the planarization layer is disposed on the interlayer insulating layer.

The beneficial effect who adopts above-mentioned scheme is: a flat surface can be provided above the substrate by the buffer layer, the gate and the active layer can be isolated by the gate insulating layer, and the source and the gate, the drain and the gate can be isolated by the interlayer insulating layer.

Furthermore, thin film transistors are arranged in the circuit layer and correspond to the LED chips one to one;

the thin film transistor comprises an active layer, a grid electrode, a source electrode and a drain electrode, wherein the source electrode and the drain electrode are respectively connected with the active layer, and the thin film transistor is connected with the LED chip through the drain electrode;

the grid insulating layer is used for isolating the grid electrode on the thin film transistor from the active layer;

the interlayer insulating layer is used for isolating the source electrode and the grid electrode on the thin film transistor and isolating the drain electrode and the grid electrode on the thin film transistor.

The beneficial effect who adopts above-mentioned scheme is: through being provided with the thin film transistor with LED chip one-to-one, can drive each LED chip one by one, help realizing LED display panel's high speed, hi-lite and high contrast, improve LED display panel's performance.

Furthermore, a power grounding wire is arranged in the circuit layer; the first contact electrode is connected with a drain electrode on the thin film transistor, the second contact electrode is connected with the power grounding wire, and the first contact electrode and the second contact electrode are also respectively connected with a first electrode and a second electrode of the LED chip.

The beneficial effect who adopts above-mentioned scheme is: the LED chip is respectively connected with the drain electrode on the thin film transistor and a power grounding wire arranged in the circuit layer through the first contact electrode and the second contact electrode on the planarization layer, so that the connection reliability can be ensured.

An LED display is formed by splicing at least two LED display panels;

in the adjacent LED display panels, the chief ray emitted by the inclined emission type light emitting chip on the first LED display panel and the chief ray emitted by the inclined emission type light emitting chip on the second LED display panel are mutually staggered.

Compared with the prior art, the technical scheme has the beneficial effects that: in the LED display panel, a vertical emergent light-emitting chip is arranged inside an LED array, an inclined emergent light-emitting chip is arranged at the edge of the LED array, and a principal ray which faces away from the geometric center direction of the display backboard and is emitted by the inclined emergent light-emitting chip; the LED display panel with the structure is spliced to obtain the LED display, and a light condensation effect can be formed between the adjacent LED display panels, so that dark stripes generated between the adjacent LED display panels are avoided, and the overall display effect is improved.

Drawings

FIG. 1 is a schematic front view of the LED display panel assembly of the present invention.

FIG. 2 is a front detail view of the LED display panel tiling of the present invention.

Fig. 3 is a schematic side view of a first embodiment of an LED display panel according to the present invention.

Fig. 4 is a schematic side view of a second embodiment of an LED display panel according to the present invention.

Fig. 5 is a schematic side view of a third embodiment of an LED display panel according to the present invention.

FIG. 6 is a schematic view of a first structure of an LED display panel of the present invention in which an LED chip is mated with a display backplane.

Fig. 7 is a schematic view of a first structure of the LED display panel of the present invention in which the LED chip is engaged with the tft.

FIG. 8 is a schematic diagram of a second structure of the LED display panel of the present invention in which the LED chip is engaged with the display backplane.

Fig. 9 is a schematic diagram of a second structure of the LED display panel according to the present invention, in which the LED chip is combined with the tft.

Fig. 10 is a schematic structural diagram of an LED chip with a straight planar second side in an LED display panel according to the present invention.

Fig. 11 is a schematic structural diagram of an LED chip with a slanted plane on the second side of the LED display panel according to the present invention.

Fig. 12 is an exploded view of the vertical emission type light emitting chip with an inclined plane disposed in the LED display panel according to the present invention in cooperation with the groove.

Fig. 13 is a schematic view of the combination of the vertical emission type light emitting chip with an inclined plane and the groove of the LED display panel according to the present invention.

FIG. 14 is an exploded view of the slanted emitting LED chip of the display panel of the present invention mated with the cavity.

Fig. 15 is a schematic diagram of the combination of the inclined emission type light emitting chip and the groove in the LED display panel according to the present invention.

In the figures, the list of components represented by the various reference numbers is as follows:

the LED display device comprises a display back plate 1, an LED array 2, an LED chip 3, a groove 4, a through hole 5 and a thin film transistor 6;

a substrate 101, a circuit layer 102, a planarization layer 103, a buffer layer 104, a gate insulating layer 105, an interlayer insulating layer 106, a first contact electrode 107, and a second contact electrode 108;

a vertical emission type light emitting chip 301, an oblique emission type light emitting chip 302, a first electrode 303, a first semiconductor layer 304, a light emitting layer 305, a second semiconductor layer 306, a second electrode 307, a first side surface 308, and a second side surface 309;

an active layer 601, a gate electrode 602, a source electrode 603, and a drain electrode 604.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or assembly referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, and the two components can be communicated with each other. When an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When a component is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Limited by cost and production technology, the industry has not been able to make large or ultra-large LED displays with a complete LED display panel; correspondingly, in order to obtain a large-block LED display, a plurality of smaller LED display panels are generally used, and a larger LED display is formed by splicing. However, such an implementation has a very obvious defect that the dark stripes formed between adjacent LED display panels greatly affect the display effect of the LED display.

As shown in fig. 1 and 2, the LED display is formed by splicing at least two LED display panels, and the LED display includes a display area and a peripheral area, where the display area includes LED chips arranged in an array, and the peripheral area refers to an area where no LED chip is disposed, and may generally include some driving circuits and driving chips. In the same LED display panel, the distance between adjacent LED chips in the display area is d; when the two LED display panels are spliced with each other, the distance between the LED chips on the edges of the two adjacent LED display panels at the splicing position is D; generally, the LED chips can be arranged densely, and the blank area on the edge of the LED display panel is relatively wide, so that D > D, and because D > D, the joint between the two LED display panels can generate dark stripes visually, thereby affecting the display effect of the LED display. It is the technical problem to be solved by the present invention if the dark lines formed due to the above reasons are eliminated.

In order to solve the above problems, the present invention provides an LED display panel and an LED display, which aims to avoid forming dark stripes between two LED display panels by improving LED chips at edge portions, and further improve the display effect of the LED display panels.

As shown in fig. 3, 4 and 5, an LED display panel includes a display back plate 1, an LED array 2 is disposed on the display back plate 1, and the LED array 2 includes LED chips 3 disposed side by side. The present invention creatively adopts two kinds of light emitting chips, a vertical emission type light emitting chip 301 and an inclined emission type light emitting chip 302, as the LED chip 3. Specifically, at least one vertical-emission light-emitting chip 301 is disposed inside the LED array 2, and a direction of a principal ray emitted by the vertical-emission light-emitting chip 301 is perpendicular to the direction of the display backplane 1; at least one inclined emission type light emitting chip 302 is arranged at the edge of the LED array 2, and the principal ray emitted by the inclined emission type light emitting chip 302 faces a direction away from the geometric center of the display back plate 1. In fig. 3, 4 and 5, the direction indicated by the arrow is the light-emitting direction of the principal ray emitted by the LED chip 3.

The number of the light rays emitted by each LED chip is not one, and a plurality of light rays with strong direction consistency exist in the plurality of light rays emitted by the LED chips, so that the light rays form the main light ray of the LED chip. In contrast, there are some other rays with a slight deviation in direction around the chief ray, which are either biased to the left or to the right. In general, the divergence angle of an LED chip is about 120 °, but the chief ray for achieving its light emitting function is the chief ray.

Generally, the chief ray emitted by the LED chip 3 is directed to a direction perpendicular to the display back plate 1, while in the above technical solution, the chief ray emitted by the inclined emission type light emitting chip 302 is directed away from the geometric center of the display back plate 1, and the following describes the chief ray direction problem of the inclined emission type light emitting chip 302 in three embodiments.

As shown in fig. 3, in the first embodiment, two LED display panels are disposed one on left and the other on right. In the left LED display panel, a vertical emission type light emitting chip 301 is disposed near the center thereof, the main light emitted from the vertical emission type light emitting chip 301 is directed perpendicular to the display back panel 1, and an inclined emission type light emitting chip 302 is disposed at the rightmost edge thereof, and the main light emitted from the inclined emission type light emitting chip 302 has a right inclination angle with respect to the vertical direction. Correspondingly, in the right LED display panel, a vertical emission type light emitting chip 301 is disposed near the center, the main light emitted from the vertical emission type light emitting chip 301 is oriented perpendicular to the display back plate 1, and an inclined emission type light emitting chip 302 is disposed on the leftmost edge, and the main light emitted from the inclined emission type light emitting chip 302 has a leftward inclination with respect to the vertical direction. The main light rays emitted by the inclined emission type light emitting chip 302 towards the direction far away from the geometric center of the display backboard 1 form a light condensation effect between the adjacent LED display panels, so that dark stripes generated between the adjacent LED display panels are avoided, and the overall display effect is improved.

As shown in fig. 4, in the second embodiment, the structure and the operation principle of the LED display panel are the same as those of the first embodiment, and are not repeated herein, and the different points are mainly described herein. In the first embodiment, two oblique-emission type light emitting chips 302 are disposed on the rightmost edge of the left LED display panel, and two oblique-emission type light emitting chips 302 are disposed on the leftmost edge of the right LED display panel. Specifically, the number of the oblique-emission-type light-emitting chips 302 may also be adjusted according to the size of the LED display panel, and may also be provided in plurality. Therefore, the brightness transition between the adjacent LED display panels is smoother, and a better display effect can be provided visually.

As shown in fig. 5, in the third embodiment, a groove 4 is provided on the LED display panel, and the LED chip 3 is disposed in the groove 4. The structure can simplify the manufacturing process and reduce the production cost; in addition, after the LED display panel is installed, the bottom of the groove 4 and the LED chip 3 have a gap, so that the pressure applied to the LED chip 3 during bonding can be prevented from pressing and damaging devices on the LED display panel.

Specifically, the groove is disposed between the first contact electrode and the second contact electrode, and the epitaxial portion of the LED chip is disposed in the groove. The epitaxial part of the LED chip specifically comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer, and after holes and electrons come out of the first semiconductor layer and the second semiconductor layer, the holes and the electrons are combined in the light-emitting layer and release energy in the form of photons, so that light is emitted. The epitaxial portion with the LED chip sets up in the recess, not only can fix whole LED chip, can also seal all the other each faces of LED chip through the recess, only leaves the one side that deviates from the display backplate as emergent ray, improves luminous efficacy.

When the technical scheme of the invention is implemented, the shape of the LED display panel can be circular, triangular, trapezoidal, rectangular and irregular. Preferably, the display back plate 1 is a rectangular plate-shaped structure. The LED array 2 is arranged on the display back plate 1, and the edges of the LED array 2 are positioned on four side edges of the display back plate 1; the inclined emission type light emitting chip 302 is disposed on at least one side of the display back plate 1. Specifically, the display back plate 1 may be provided with the oblique-emission-type light-emitting chips 302 on one side, the oblique-emission-type light-emitting chips 302 on two sides, or the oblique-emission-type light-emitting chips 302 on three or four sides.

For example, when three or more LED display panels are joined together end to form an LED display panel, the LED display panels at both ends need only have the oblique-emission light-emitting chips 302 on one side, while the LED display panel at the middle needs to have the oblique-emission light-emitting chips 302 on two opposite sides. For another example, when four LED display panels are combined side by side to obtain a2 × 2 LED display panel, the LED display panel needs to have the oblique emission type light emitting chips 302 on two adjacent sides. For another example, when nine LED display panels are spliced side by side to obtain a 3 × 3 LED display panel, the LED display panel located at the center needs to have the oblique-emission-type light-emitting chips 302 on four sides, and the other LED display panels need to have the oblique-emission-type light-emitting chips 302 on three adjacent sides, or need to have the oblique-emission-type light-emitting chips 302 on two adjacent sides. In summary, by disposing the oblique-emission light-emitting chip 302 on the intersecting edge of two adjacent LED display panels, the problem of dark stripes in the prior art can be solved, thereby improving the display effect of the LED display.

As shown in fig. 6, 7, 8 and 9, the display back plate 1 includes a substrate 101, a circuit layer 102 and a planarization layer 103, wherein the circuit layer 102 is disposed on the substrate 101, and the planarization layer 103 is disposed on the circuit layer 102. Specifically, the vertical emission type light emitting chip 301 and the oblique emission type light emitting chip 302 are disposed on the planarization layer 103, and the vertical emission type light emitting chip 301 and the oblique emission type light emitting chip 302 are connected to the circuit layer 102, respectively.

Specifically, the substrate 101 mainly serves as a structural support. The substrate 101 comprises a transparent glass material, such as silicon dioxide. The substrate 101 may also comprise a transparent plastic material, such as: polyether sulfone, polyacrylate, polyether imide, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose triacetate, cellulose propionate, or other organic materials.

As shown in fig. 7 and 9, the circuit layer 102 preferably includes a driving circuit, such as a thin film transistor 6, for driving the LED chip 3. The thin film transistor 6 comprises an active layer 601, a gate electrode 602, a source electrode 603 and a drain electrode 604, wherein the source electrode 603 and the drain electrode 604 are respectively connected with the active layer 601, and the thin film transistor 6 is connected with the LED chip 3 through the drain electrode 604; the gate insulating layer 105 is used for isolating the gate 602 and the active layer 601 on the thin film transistor 6; the interlayer insulating layer 106 is used for isolating the source 603 and the gate 602 of the thin film transistor 6, and for isolating the drain 604 and the gate 602 of the thin film transistor 6. Through being provided with the thin film transistor 6 with LED chip 3 one-to-one, can drive each LED chip 3 one by one, help realizing LED display panel's high speed, hi-lite and high contrast, improve LED display panel's performance.

The thin film transistor 6 is preferably a top gate thin film transistor, but may be a bottom gate thin film transistor. The top gate type thin film transistor can significantly reduce the parasitic capacitance formed between the source/drain 604 and the gate 602, thereby increasing the on-state current of the thin film transistor, further increasing the operating speed of the device, and facilitating the reduction of the size of the device.

The active layer 601 on the thin film transistor 6 may be comprised of a semiconductor material such as amorphous silicon or polysilicon. The active layer 601 may also include other materials, such as: an organic semiconductor material or an oxide semiconductor material. The gate 602, the source 603, and the drain 604 may include a low resistance metal material such as aluminum, platinum, palladium, silver, magnesium, gold, nickel, neodymium, iridium, chromium, lithium, calcium, molybdenum, titanium, tungsten, copper, or the like.

Specifically, the planarization layer 103 covers the circuit layer 102, so that the height difference formed by the sizes of various devices on the circuit layer 102 can be eliminated and planarized. One of the main functions of the planarization layer 103 is to make the layers above the planarization layer 103 uniform in flatness. The color shift problem can be improved to some extent by increasing the thickness of the planarization layer 103, which can improve the flatness of the metal anode, so that the upper layers are more flat and easier to correct the color shift.

The planarization layer 103 specifically includes an organic material such as polymethyl methacrylate or polystyrene, and may further include a polymer derivative having a phenol group, a propylene-based polymer, an imide-based polymer, an aryl ether-based polymer, an amide-based polymer, a fluorine-based polymer, a p-xylene-based polymer, a vinyl alcohol-based polymer, or any combination thereof.

As shown in fig. 7 and 9, more specifically, the circuit layer 102 includes a buffer layer 104, a gate insulating layer 105, and an interlayer insulating layer 106 disposed from bottom to top; the buffer layer 104 is disposed on the substrate 101, and the planarization layer 103 is disposed on the interlayer insulating layer 106. Thin film transistors 6 are further arranged in the circuit layer 102, and the thin film transistors 6 correspond to the LED chips 3 one by one. Wherein the buffer layer 104 is disposed above the substrate 101, a substantially flat surface can be provided above the substrate 101, and penetration of foreign substances or moisture into the substrate 101 can be reduced or prevented. The buffer layer 104 specifically includes an inorganic material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, titanium oxide, or titanium nitride. The buffer layer 104 may also include an organic material such as polyimide, polyester, or acrylic. The gate 602 and the active layer 601 may be isolated by the gate insulating layer 105, and the gate insulating layer 105 specifically includes an inorganic material, such as SiO2, SiNx, SiON, Al2O3, TiO2, Ta2O5, HfO2, ZnO2, or the like. The source 603 and gate 602, the drain 604 and the gate 602 may be isolated by the interlayer insulating layer 106, and the interlayer insulating layer 106 may further include inorganic materials, such as: SiO2, SiNx, SiON, Al2O3, TiO2, Ta2O5, HfO2, ZnO2, and the like.

As shown in fig. 6 and 8, preferably, a first contact electrode 107 and a second contact electrode 108 are further disposed on the planarization layer 103, and a power ground line is disposed in the circuit layer 102; the first contact electrode 107 is connected to the drain 604 of the thin film transistor 6, the second contact electrode 108 is connected to the power ground, and the first contact electrode 107 and the second contact electrode 108 are further connected to the LED chip 3. The LED chip 3 is connected to the drain 604 of the thin film transistor 6 and the power ground line provided in the circuit layer 102 through the first contact electrode 107 and the second contact electrode 108 on the planarization layer 103, respectively, so that the reliability of the connection can be ensured. Specifically, the power ground line may be arranged on one of the buffer layer 104, the gate insulating layer 105, and the interlayer insulating layer 106 under the planarization layer 103.

As shown in fig. 6 and 8, specifically, the first contact electrode 107 and the second contact electrode 108 are provided on the surface of the planarization layer 103. The planarization layer 103 is provided with a through hole 5, the first contact electrode 107 is connected to the thin film transistor 6 in the circuit layer 102 through the filling material in the through hole 5, and the second contact electrode 108 is connected to the power ground line in the circuit layer 102. Correspondingly, the first contact electrode 107 and the second contact electrode 108 are bonded to the first electrode 303 and the second electrode 307 on the LED chip 3, respectively. The first contact electrode 107, the second contact electrode 108, the filling material in the via hole 5, and the material of the connection may include aluminum, platinum, palladium, silver, magnesium, gold, nickel, neodymium, iridium, chromium, lithium, calcium, molybdenum, titanium, tungsten, copper, or the like.

As shown in fig. 10 and 11, each of the vertical emission type light emitting chip 301 and the oblique emission type light emitting chip 302 includes a first electrode 303, a first semiconductor layer 304, a light emitting layer 305, a second semiconductor layer 306, and a second electrode 307, which are sequentially disposed. Two sides of the first semiconductor layer 304, the light emitting layer 305 and the second semiconductor layer 306 form a first side surface 308 and a second side surface 309 which are oppositely arranged.

The present invention is inventive in that in the vertical emission type light emitting chip 301, the first side surface 308 is set to be a straight plane, the second side surface 309 is set to be a straight plane or an inclined plane, and the principal ray of the vertical emission type light emitting chip 301 is emitted from the first side surface 308. The present invention also creatively sets the first side surface 308 as a straight plane, sets the second side surface 309 as an inclined plane, and makes the principal ray of the inclined emission type light emitting chip 302 exit from the second side surface 309 in the inclined emission type light emitting chip 302.

The vertical emission type light emitting chip 301 may be provided with two kinds of similarities. In the first type of vertical emission light-emitting chip 301, the first side surface 308 is a straight plane, the second side surface 309 is also a straight plane, the first side surface 308 and the second side surface 309 are parallel to each other, and the other side surfaces except the first side surface 308 are provided with mirror-like reflective layers for condensing light. In the second type of vertical emission light-emitting chip 301, the first side surface 308 is a straight plane, the second side surface 309 is an inclined plane, an inclined angle is formed between the first side surface 308 and the second side surface 309, and the other side surfaces except the first side surface 308 are provided with mirror-like reflective layers for condensing light. The vertical emission type light emitting chip 301 is used to emit a principal ray perpendicular to the display back plate 1, and therefore, in the above two similar vertical emission type light emitting chips 301, the principal ray is emitted from the first side surface 308 and is perpendicular to the display back plate 1.

Correspondingly, in the oblique-emission type light emitting chip 302, the first side 308 is a straight plane, and the second side 309 is an oblique plane, so that the present invention utilizes the refraction of light by the oblique plane to change the emission direction of the principal ray of the LED chip 3.

As shown in fig. 12 and 13, when the vertical emission type light emitting chip whose second side is an inclined plane is mounted, the second side faces downward into the recess 4, and the first contact electrode 107 is connected to the first electrode 303 of the LED chip 3 and the second contact electrode 108 is connected to the second electrode 307 of the LED chip 3.

As shown in fig. 14 and 15, when the oblique emission type light emitting chip is mounted, the first side surface 308 is recessed downward into the recess 4, and the first contact electrode 107 is connected to the first electrode 303 of the LED chip 3, and the second contact electrode 108 is connected to the second electrode 307 of the LED chip 3.

As shown in fig. 5, in the third embodiment, the vertical emission type light emitting chip 301 having the second side surface 309 as an inclined plane is used, and the LED chips 3 having the same structure can be used as the vertical emission type light emitting chip 301 and the inclined emission type light emitting chip 302, respectively, to manufacture an LED display panel, which is convenient for manufacturers to manufacture and can reduce the manufacturing cost. Meanwhile, after the LED chip 3 is arranged in the groove 4, a gap exists between the bottom of the groove 4 and the LED chip 3, so that the pressure applied to the LED chip 3 during bonding can be prevented from pressing and damaging devices on the LED display panel.

Correspondingly, the invention also provides an LED display, which is formed by splicing at least two LED display panels; in the adjacent LED display panels, the chief ray emitted by the oblique-emission light-emitting chip 302 on the first LED display panel and the chief ray emitted by the oblique-emission light-emitting chip 302 on the second LED display panel are mutually staggered. In the LED display panel, a vertical emission type light emitting chip 301 is disposed inside the LED array 2, and an inclined emission type light emitting chip 302 is disposed at the edge of the LED array 2, and a principal ray facing away from the geometric center of the display back panel 1 is emitted by the inclined emission type light emitting chip 302; the LED display panel with the structure is spliced to obtain the LED display, and a light condensation effect can be formed between the adjacent LED display panels, so that dark stripes generated between the adjacent LED display panels are avoided, and the overall display effect is improved.

In summary, the present invention provides an LED display panel and an LED display having the LED display panel, which can ensure that no dark lines are generated between adjacent LED display panels, thereby improving the overall display effect. In the prior art, dark stripes are generated between adjacent display back plates 1 due to overlarge distance between the LED chips 3, so that the display effect is poor. The technical scheme adopted by the invention is that an inclined plane is arranged on the LED chip 3, and the emergent direction of the principal ray is changed through the inclined plane, so that crossed light is formed at the edges of the two back plates, and dark fringes are eliminated. In general, the invention has two points: firstly, an LED chip 3 which emits light obliquely is arranged at the edge of the display back plate 1. And an inclined plane is arranged on the LED chip 3 and used for changing the emergent direction of light.

It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.