阅读说明：本技术 一种掺镱硼酸锶镧钇混晶激光晶体及其制备方法和应用 (Ytterbium-doped strontium borate lanthanum yttrium mixed crystal laser crystal and preparation method and application thereof ) 是由 潘忠奔 唐开阳 张衍 戴晓军 何亭 居佳 袁浩 蔡华强 于 2019-11-28 设计创作，主要内容包括：本发明公开了一种掺镱硼酸锶镧钇混晶激光晶体及其制备方法和应用,掺镱硼酸锶镧钇混晶激光晶体的分子式为Sr<Sub>3</Sub>Y<Sub>x</Sub>La<Sub>y</Sub>Yb<Sub>2-x-y</Sub>(BO<Sub>3</Sub>)<Sub>4</Sub>,其中x＝0～2,y＝0～2,Yb<Sup>3+</Sup>离子的掺杂浓度为5at.％至30at.％。实验结果表明所制备的Sr<Sub>3</Sub>Y<Sub>x</Sub>La<Sub>y</Sub>Yb<Sub>2-x-y</Sub>(BO<Sub>3</Sub>)<Sub>4</Sub>混晶性能介于Yb:Sr<Sub>3</Sub>Y<Sub>2</Sub>(BO<Sub>3</Sub>)<Sub>4</Sub>和Yb:Sr<Sub>3</Sub>La<Sub>2</Sub>(BO<Sub>3</Sub>)<Sub>4</Sub>两种晶体之间,较Yb:Sr<Sub>3</Sub>La<Sub>2</Sub>(BO<Sub>3</Sub>)<Sub>4</Sub>晶体具有更大的无序度,采用锁模技术,有望获得更短的超短脉冲激光输出。(The invention discloses a ytterbium-doped strontium borate lanthanum yttrium mixed crystal laser crystal and a preparation method and application thereof, wherein the molecular formula of the ytterbium-doped strontium borate lanthanum yttrium mixed crystal laser crystal is Sr 3 Y x La y Yb 2‑x‑y (BO 3 ) 4 Wherein x is 0-2, y is 0-2, Yb 3+ The doping concentration of the ions is 5 at.% to 30 at.%. The experimental result shows that the prepared Sr 3 Y x La y Yb 2‑x‑y (BO 3 ) 4 The mixed crystal property is between Yb and Sr 3 Y 2 (BO 3 ) 4 And Yb: Sr 3 La 2 (BO 3 ) 4 Between two kinds of crystals, as compared with Yb and Sr 3 La 2 (BO 3 ) 4 The crystal has larger disorder degree, and is hopeful to obtain by adopting the mode locking technologyThereby obtaining shorter ultrashort pulse laser output.)

1. An ytterbium doped strontium borate lanthanum yttrium laser crystal is characterized in that the laser crystal is Yb³⁺Ion-doped Sr₃(Y,La)(BO₃)₄The molecular formula of the crystal is Sr₃Y_xLa_yYb_2-x-y(BO₃)₄Wherein x is 0-2, y is 0-2, Yb³⁺The doping concentration of the ions is 5 at.% to 30 at.%.

2. The ytterbium-doped strontium lanthanum yttrium borate laser crystal as claimed in claim 1, wherein the Y, La element is formed by Yb³⁺And (4) substituting.

3. The method for preparing ytterbium-doped strontium lanthanum yttrium borate laser crystal as claimed in claim 1 or 2, characterized in that the ytterbium-doped strontium lanthanum yttrium borate laser crystal is prepared by the following raw materials through solid phase reaction to obtain mixed crystal and then adopting a pulling method:

raw materials: y with a purity of 99.99%₂O₃Yb of 99.99% purity₂O₃La of 99.99% purity₂O₃Purity of 99.99% SrCO₃H with a purity of 99.99%₃BO₃；

Solid phase reaction chemical formula:

4. the method according to claim 3, wherein the solid phase reaction comprises the steps of: fully mixing the raw materials, carrying out solid-phase reaction for 20-24 h at the temperature of 900-1000 ℃, and then heating to 1000-1200 ℃ for reaction for 24-30 h to obtain the polycrystalline material.

5. The method according to claim 4, wherein the pulling method comprises the step of pulling a polycrystalline material at a pulling rate of 0.5 to 3 mm/hr and at a rotation speed of 4 to 11rpm in a pulling furnace.

6. Use of an ytterbium-doped strontium lanthanum yttrium borate laser crystal according to claim 1 or 2, characterized in that the crystal is used in a 1 μm solid mode-locked laser to generate ultrafast laser pulses.

Technical Field

The invention belongs to the field of laser crystal materials, and particularly relates to a preparation method and application of a laser crystal and application of the laser crystal in a solid laser.

Background

Laser is one of the most great inventions in the 20 th century, and a technology widely studied in recent 50 years has an important role in the fields of military affairs, medical treatment, distance measurement, positioning, and the like. Currently, commonly used lasers include solid-state lasers, liquid lasers, gas lasers, and semiconductor lasers. The solid laser has small volume and convenient use, can realize larger laser output and is widely applied to various occasions. While the core of the laser is the gain medium.

The gain medium mainly comprises two parts: the laser properties of the active ion and the dielectric material, such as the absorption spectrum, the emission spectrum, the fluorescence lifetime and the like of the laser are determined by the energy level of the active ion. The currently common active ions are mainly composed of rare earth ions or transition metal ions. The dielectric material substantially determines the physical and chemical properties of the gain material. Common dielectric materials are crystals, glasses, and ceramics. Among them, laser crystal is a hot spot for studying the current solid laser because of its unique stability, physical and chemical characteristics including higher thermal conductivity, which makes laser crystal a hot spot for studying, high power, high energy laser is a hot research direction in the study, it faces to advanced manufacturing technology and laser weapons, its comprehensive requirements for crystal are higher, especially physical and chemical characteristics, besides short pulse, broad band are also the key points pursued in laser crystal. The disordered crystal has the advantages that the spectrum can be widened due to the appearance of different ions at the same position, the physical and chemical properties of the disordered crystal are excellent, and the disordered crystal is favored by a plurality of researchers.

Disclosure of Invention

The invention aims to provide a laser crystal material which can generate 1 micron ultrashort pulse, the disorder degree of the material is larger, and then the ultrashort pulse laser can be generated more favorably through a mode locking technology.

In order to achieve the technical effects, the invention adopts the following technical scheme:

an ytterbium doped strontium borate lanthanum yttrium laser crystal is Yb³⁺Ion-doped Sr₃(Y,La)(BO₃)₄The molecular formula of the crystal is Sr₃Y_xLa_yYb_2-x-y(BO₃)₄Wherein x is 0-2, y is 0-2, Yb³⁺The doping concentration of the ions is 5 at.% to 30 at.%. at.% means atomic number percentage content. Through the verification of multiple experiments, when x is 0-2, y is 0-2, Yb³⁺The doping concentration of (A) is preferably 0 to 30 at% based on the crystal mass. In the molecular formula of the crystal, x is not equal to 0, and y is not equal to 0.

The further technical proposal is that Y, La elements in the ytterbium-doped strontium lanthanum yttrium borate laser crystal are coated by Yb³⁺And (4) substituting.

The invention also provides a preparation method of the ytterbium-doped strontium borate lanthanum yttrium laser crystal, wherein the ytterbium-doped strontium borate lanthanum yttrium laser crystal is prepared by the following raw materials through solid-phase reaction to obtain mixed crystals and then adopting a pulling method:

raw materials: y with a purity of 99.99%₂O₃Yb of 99.99% purity₂O₃La of 99.99% purity₂O₃Purity of 99.99% SrCO₃H with a purity of 99.99%₃BO₃；

Solid phase reaction chemical formula:

the further technical scheme is that the solid phase reaction comprises the following steps: fully mixing the raw materials, carrying out solid-phase reaction for 20-24 h at the temperature of 900-1000 ℃, and then heating to 1000-1200 ℃ for reaction for 24-30 h to obtain the polycrystalline material.

The further technical scheme is that the pulling method comprises the step of placing a polycrystalline material in a pulling furnace, wherein the pulling speed of growth is 0.5-3 mm/h, and the rotating speed is 4-11 rpm.

The invention also provides application of the ytterbium-doped strontium lanthanum yttrium borate laser crystal, and the crystal is used for generating ultrafast laser pulses in a 1-micron solid mode-locked laser.

Compared with the prior art, the invention has at least the following beneficial effects: sr prepared by the invention₃Y_xLa_yYb_2-x-y(BO₃)₄The mixed crystal property is between Yb and Sr₃Y₂(BO₃)₄And Yb: Sr₃La₂(BO₃)₄Between two kinds of crystals, as compared with Yb and Sr₃La₂(BO₃)₄The crystal has larger disorder degree, and by adopting the mode locking technology, shorter ultrashort pulse laser output is hopeful to be obtained, and ultrafast laser pulse can be generated in a 1 mu m solid mode-locked laser.

Drawings

FIG. 1 shows Sr of the present invention₃Y_0.9La_0.9Yb_0.2(BO₃)₄Mixed crystal, and Sr₃La_1.8Yb_0.2(BO₃)₄And Sr₃Y_1.8Yb_0.2(BO₃)₄XRD diffraction pattern of (a).

FIG. 2 shows Sr of the present invention₃Y_0.9La_0.9Yb_0.2(BO₃)₄Mixed crystal, and Sr₃Y_1.8Yb_0.2(BO₃)₄And Sr₃La_1.8Yb_0.2(BO₃)₄The emission spectrum of (a).

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.