阅读说明：本技术 一种与工艺角弱相关的延时电路单元 (Delay circuit unit weakly related to process corner ) 是由 贾晨 *** 张春 权磊 方成 尹勇生 王志华 于 2019-12-02 设计创作，主要内容包括：本发明属公开了一种与工艺角弱相关的延时电路单元,该电路包括：六个PMOS管和十个NMOS管；通过在传统的延时电路单元的基础上,增加延时补偿电路,从而构成与工艺弱相关的延时电路单元。本发明能抵消由于不同工艺角而造成延时差异,满足系统对于延时电路的要求,增加电路设计的裕量,从而提高产品良率。(The invention discloses a delay circuit unit which is weakly related to a process corner, comprising: six PMOS tubes and ten NMOS tubes; a delay compensation circuit is added on the basis of the traditional delay circuit unit, so that the delay circuit unit weakly related to the process is formed. The invention can offset the delay difference caused by different process angles, meet the requirement of the system on the delay circuit, and increase the allowance of the circuit design, thereby improving the yield of products.)

1. A delay circuit cell weakly correlated to process corner, comprising: six PMOS tubes and ten NMOS tubes;

the six PMOS tubes are sequentially as follows: a first PMOS transistor PM1, a second PMOS transistor PM2, a third PMOS transistor PM3, a fourth PMOS transistor PM4, a fifth PMOS transistor PM5 and a sixth PMOS transistor PM 6;

the ten NMOS tubes are sequentially as follows: a first NMOS transistor NM1, a second NMOS transistor NM2, a third NMOS transistor NM3, a fourth NMOS transistor NM4, a fifth NMOS transistor NM5, a sixth NMOS transistor NM6, a seventh NMOS transistor NM7, an eighth NMOS transistor NM8, a ninth NMOS transistor NM9, and a tenth NMOS transistor NM 10;

the source electrode of the first PMOS tube PM1 is connected with a power supply voltage VDD, the source drain electrode of the first PMOS tube PM1 and the drain electrode of the first NMOS tube NM1 are connected to a node A in the same phase, and the source electrode of the first NMOS tube NM1 is connected with a ground voltage VSS, so that a first phase inverter circuit is formed and serves as an input stage circuit of the delay circuit unit;

the source of the second PMOS transistor PM2 is connected to the power supply voltage VDD, the drain of the second PMOS transistor PM2 and the drain of the second NMOS transistor NM2 are connected to a node B in common, and the source of the second NMOS transistor NM2 is connected to the ground voltage VSS, thereby forming a first delay circuit and serving as a first stage delay of the delay circuit unit;

the source of the fifth PMOS transistor PM5 is connected to the node B, the drain of the fifth PMOS transistor PM5 and the drain of the fifth NMOS transistor NM5 are connected to a node E in common, and the source of the fifth NMOS transistor NM5 is connected to the ground voltage VSS, so as to form a first stage delay compensation circuit, which is a first stage delay compensation circuit of the delay circuit unit;

a source and a drain of the seventh NMOS transistor NM7 are connected to the ground voltage VSS, a gate of the seventh NMOS transistor NM7 is connected to the node E, and a capacitor formed by the source and the drain of the seventh NMOS transistor NM7 is used as a load capacitor of the node E;

a source and a drain of the ninth NMOS transistor NM9 are connected to the ground voltage VSS, a gate of the ninth NMOS transistor NM9 is connected to the node B, and a capacitor formed by the source and the drain of the ninth NMOS transistor NM9 connected to each other serves as a load capacitor of the node B;

the source electrode of the third PMOS transistor PM3 is connected to the power supply voltage VDD, the source electrode and the drain electrode of the third PMOS transistor PM3 and the drain electrode of the third NMOS transistor NM3 are connected to a node C in common, and the source electrode of the third NMOS transistor NM3 is connected to the ground voltage VSS, so that a second delay circuit is formed and serves as a second stage delay of the delay circuit unit;

the source of the sixth PMOS transistor PM6 is connected to the node C, the drain of the sixth PMOS transistor PM6 and the drain of the sixth NMOS transistor NM6 are connected to the point F in common, and the source of the sixth NMOS transistor NM6 is connected to the ground voltage VSS, so as to form a second delay compensation circuit, which is used as a second stage delay compensation circuit of the delay circuit unit;

a source and a drain of the eighth NMOS transistor NM8 are connected to the ground voltage VSS, a gate of the eighth NMOS transistor NM8 is connected to the node F, and a capacitor formed by the source and the drain of the eighth NMOS transistor NM8 is used as a load capacitor of the node F;

a source and a drain of the tenth NMOS transistor NM10 are connected to the ground voltage VSS, a gate thereof is connected to the node C, and a capacitor formed by the source and the drain of the tenth NMOS transistor NM10 connected to each other serves as a load capacitor of the node C;

the source of the fourth PMOS transistor PM4 is connected to the power supply voltage VDD, the drain of the fourth PMOS transistor PM4 and the drain of the fourth NMOS transistor NM4 are connected to an OUT point in common, and the source of the fourth NMOS transistor NM4 is connected to the ground voltage VSS, thereby forming a second inverter circuit and serving as an output stage circuit of the delay circuit unit.

Technical Field

The invention belongs to the technical field of integrated circuits, and particularly relates to a delay circuit unit weakly related to a process corner and application thereof.

Background

With the progress of the CMOS process, the development trend of the integrated circuit is to have higher integration level and lower power consumption. However, as the complexity of the chip increases, the product yield becomes an important factor affecting the chip cost. Ensuring high performance of the circuit under different process conditions becomes a primary task for circuit designers, and more hopefully, the delay circuit can have the same delay at different process angles. Many IC chips require the use of delay circuits. The delay circuit is generally formed by combining one or more delay units, and the conventional delay unit is configured by MOS transistors to obtain the required RC delay, as shown in fig. 1.

In a conventional circuit, a delay unit is generally formed by a cascade connection mode by adopting an inverter circuit of an inverting diode. Such delay circuits create large delay differences when the tubes are at different process corners. In the circuit design with more accurate delay requirement, the requirement of the circuit for time sequence cannot be met.

Disclosure of Invention

In order to overcome the above disadvantages of the existing circuit, the present invention provides a delay circuit unit weakly associated with process corners, so as to offset the delay difference caused by different process corners, meet the requirements of the system for the delay circuit, and increase the margin of the circuit design, thereby improving the product yield.

In order to achieve the purpose, the invention adopts the following technical scheme:

the invention relates to a delay circuit unit weakly related to a process corner, which is characterized by comprising the following steps: six PMOS tubes and ten NMOS tubes;

the six PMOS tubes are sequentially as follows: a first PMOS transistor PM1, a second PMOS transistor PM2, a third PMOS transistor PM3, a fourth PMOS transistor PM4, a fifth PMOS transistor PM5 and a sixth PMOS transistor PM 6;

the ten NMOS tubes are sequentially as follows: a first NMOS transistor NM1, a second NMOS transistor NM2, a third NMOS transistor NM3, a fourth NMOS transistor NM4, a fifth NMOS transistor NM5, a sixth NMOS transistor NM6, a seventh NMOS transistor NM7, an eighth NMOS transistor NM8, a ninth NMOS transistor NM9, and a tenth NMOS transistor NM 10;

the source electrode of the first PMOS tube PM1 is connected with a power supply voltage VDD, the source drain electrode of the first PMOS tube PM1 and the drain electrode of the first NMOS tube NM1 are connected to a node A in the same phase, and the source electrode of the first NMOS tube NM1 is connected with a ground voltage VSS, so that a first phase inverter circuit is formed and serves as an input stage circuit of the delay circuit unit;

the source of the second PMOS transistor PM2 is connected to the power supply voltage VDD, the drain of the second PMOS transistor PM2 and the drain of the second NMOS transistor NM2 are connected to a node B in common, and the source of the second NMOS transistor NM2 is connected to the ground voltage VSS, thereby forming a first delay circuit and serving as a first stage delay of the delay circuit unit;

the source of the fifth PMOS transistor PM5 is connected to the node B, the drain of the fifth PMOS transistor PM5 and the drain of the fifth NMOS transistor NM5 are connected to a node E in common, and the source of the fifth NMOS transistor NM5 is connected to the ground voltage VSS, so as to form a first stage delay compensation circuit, which is a first stage delay compensation circuit of the delay circuit unit;

a source and a drain of the seventh NMOS transistor NM7 are connected to the ground voltage VSS, a gate of the seventh NMOS transistor NM7 is connected to the node E, and a capacitor formed by the source and the drain of the seventh NMOS transistor NM7 is used as a load capacitor of the node E;

a source and a drain of the ninth NMOS transistor NM9 are connected to the ground voltage VSS, a gate of the ninth NMOS transistor NM9 is connected to the node B, and a capacitor formed by the source and the drain of the ninth NMOS transistor NM9 connected to each other serves as a load capacitor of the node B;

the source electrode of the third PMOS transistor PM3 is connected to the power supply voltage VDD, the source electrode and the drain electrode of the third PMOS transistor PM3 and the drain electrode of the third NMOS transistor NM3 are connected to a node C in common, and the source electrode of the third NMOS transistor NM3 is connected to the ground voltage VSS, so that a second delay circuit is formed and serves as a second stage delay of the delay circuit unit;

the source of the sixth PMOS transistor PM6 is connected to the node C, the drain of the sixth PMOS transistor PM6 and the drain of the sixth NMOS transistor NM6 are connected to the point F in common, and the source of the sixth NMOS transistor NM6 is connected to the ground voltage VSS, so as to form a second delay compensation circuit, which is used as a second stage delay compensation circuit of the delay circuit unit;

a source and a drain of the eighth NMOS transistor NM8 are connected to the ground voltage VSS, a gate of the eighth NMOS transistor NM8 is connected to the node F, and a capacitor formed by the source and the drain of the eighth NMOS transistor NM8 is used as a load capacitor of the node F;

a source and a drain of the tenth NMOS transistor NM10 are connected to the ground voltage VSS, a gate thereof is connected to the node C, and a capacitor formed by the source and the drain of the tenth NMOS transistor NM10 connected to each other serves as a load capacitor of the node C;

the source of the fourth PMOS transistor PM4 is connected to the power supply voltage VDD, the drain of the fourth PMOS transistor PM4 and the drain of the fourth NMOS transistor NM4 are connected to an OUT point in common, and the source of the fourth NMOS transistor NM4 is connected to the ground voltage VSS, thereby forming a second inverter circuit and serving as an output stage circuit of the delay circuit unit.

Compared with the prior art, the invention has the beneficial effects that:

1. the invention adds one or a plurality of circuits with compensation property on the basis of the traditional basic delay unit circuit, thereby forming a delay circuit unit which is weakly related to the process, reducing the dispersion degree of delay time under different process angles and effectively solving the problem of overlarge delay deviation of the delay unit under different process conditions.

2. The delay unit circuit of the invention is completely in the form of MOS tube, so that the delay unit circuit can be easily applied to a digital large-scale integrated circuit in the form of a standard cell library.

Drawings

FIG. 1 is a schematic circuit diagram of a conventional delay cell;

fig. 2 is a schematic circuit diagram of the delay cell of the present invention.

Detailed Description

In this embodiment, a delay circuit unit weakly related to a process corner is formed by adding a delay compensation circuit to a conventional delay unit circuit. The circuit has the functions of: when the circuit process is an ff process angle, the integral delay of the delay unit is reduced, and the compensation circuit reduces the trend of the integral delay by increasing the discharge current of the output end of the delay unit circuit; when the circuit process is an ss process corner, the integral delay of the delay unit is increased, and the compensation circuit reduces the leakage current of the output end of the delay unit, so that the trend of the increase of the integral delay is reduced. Specifically, as shown in fig. 2, the delay circuit unit includes: six PMOS tubes and ten NMOS tubes;

six PMOS tubes are sequentially as follows: a first PMOS transistor PM1, a second PMOS transistor PM2, a third PMOS transistor PM3, a fourth PMOS transistor PM4, a fifth PMOS transistor PM5 and a sixth PMOS transistor PM 6;

the ten NMOS tubes are sequentially: a first NMOS transistor NM1, a second NMOS transistor NM2, a third NMOS transistor NM3, a fourth NMOS transistor NM4, a fifth NMOS transistor NM5, a sixth NMOS transistor NM6, a seventh NMOS transistor NM7, an eighth NMOS transistor NM8, a ninth NMOS transistor NM9, and a tenth NMOS transistor NM 10;

the source electrode of the first PMOS pipe PM1 is connected with a power supply voltage VDD, the source drain electrode of the first PMOS pipe PM1 and the drain electrode of the first NMOS pipe NM1 are connected to a node A in common phase, and the source electrode of the first NMOS pipe NM1 is connected with a ground voltage VSS, so that a first phase inverter circuit is formed and is used as an input stage circuit of the delay circuit unit;

the source electrode of the second PMOS transistor PM2 is connected to the power supply voltage VDD, the drain electrode of the second PMOS transistor PM2 and the drain electrode of the second NMOS transistor NM2 are connected to the node B in common, and the source electrode of the second NMOS transistor NM2 is connected to the ground voltage VSS, so that the first delay circuit is formed and serves as the first-stage delay of the delay circuit unit;

the source electrode of the fifth PMOS transistor PM5 is connected to the node B, the drain electrode of the fifth PMOS transistor PM5 and the drain electrode of the fifth NMOS transistor NM5 are connected to the node E in common, and the source electrode of the fifth NMOS transistor NM5 is connected to the ground voltage VSS, so that the first delay compensation circuit is formed and serves as a first-stage delay compensation circuit of the delay circuit unit;

a capacitor formed by connecting the source and the drain of the seventh NMOS transistor NM7 to the ground voltage VSS and the gate to the node E, and the source and the drain of the seventh NMOS transistor NM7 to each other serves as a load capacitor of the node E;

a capacitor formed by connecting the source and the drain of the ninth NMOS transistor NM9 to the ground voltage VSS and the gate to the node B, and the source and the drain of the ninth NMOS transistor NM9 to each other serves as a load capacitor of the node B;

the source electrode of the third PMOS transistor PM3 is connected to the power supply voltage VDD, the source electrode and the drain electrode of the third PMOS transistor PM3 and the drain electrode of the third NMOS transistor NM3 are connected to the node C in common and in phase, and the source electrode of the third NMOS transistor NM3 is connected to the ground voltage VSS, so that a second delay circuit is formed and serves as a second-stage delay of the delay circuit unit;

the source electrode of the sixth PMOS tube PM6 is connected with the node C, the drain electrode of the sixth PMOS tube PM6 and the drain electrode of the sixth NMOS tube NM6 are connected to the F point in common, and the source electrode of the sixth NMOS tube NM6 is connected with the ground voltage VSS, so that a second delay compensation circuit is formed and is used as a second-stage delay compensation circuit of the delay circuit unit;

a source and a drain of the eighth NMOS transistor NM8 are connected to form a ground voltage VSS, a gate of the eighth NMOS transistor NM8 is connected to the node F, and a capacitor formed by the source and the drain of the eighth NMOS transistor NM8 connected to each other serves as a load capacitor of the node F;

a source and a drain of the tenth NMOS transistor NM10 are connected to form a ground voltage VSS, a gate of the tenth NMOS transistor NM10 is connected to the node C, and a capacitor formed by the source and the drain of the tenth NMOS transistor NM10 connected to each other serves as a load capacitor of the node C;

the source of the fourth PMOS transistor PM4 is connected to the power supply voltage VDD, the drain of the fourth PMOS transistor PM4 and the drain of the fourth NMOS transistor NM4 are connected in common to the OUT point in phase, and the source of the fourth NMOS transistor NM4 is connected to the ground voltage VSS, thereby forming a second inverter circuit and serving as an output stage circuit of the delay circuit unit.

By adopting the delay circuit unit of the invention and the delay unit with the same circuit structure, the dispersion degree of delay time is reduced under different process angles; when the delay unit is applied to a delay circuit, the allowance of circuit design can be increased, and thus the product yield is improved.