阅读说明：本技术 固体摄像装置 (Solid-state imaging device ) 是由 板桥康 于 2019-03-04 设计创作，主要内容包括：实施方式提供一种能够减小分光特性的波动的固体摄像装置。实施方式的固体摄像装置具备：基板；像素，设置在上述基板的表面；第1布线层，设置在上述基板之上，具有与上述像素对置的第1开口；第2布线层，设置在上述第1布线层之上，具有与上述第1开口对置的第2开口；以及绝缘膜，将上述像素、上述第1布线层及上述第2布线层覆盖，具有设置在与上述第2开口对置的区域的多个凹部。上述第2开口的边缘与上述第1开口的边缘相比向远离上述第1开口的中心的方向后退。上述凹部具有圆形状的开口和有曲率的凹面，配置在比上述第2开口的上述边缘靠内侧的区域。(Embodiments provide a solid-state imaging device capable of reducing fluctuation in spectral characteristics. The solid-state imaging device of the embodiment includes: a substrate; pixels arranged on the surface of the substrate; a 1 st wiring layer provided on the substrate and having a 1 st opening facing the pixel; a 2 nd wiring layer provided on the 1 st wiring layer and having a 2 nd opening opposed to the 1 st opening; and an insulating film covering the pixel, the 1 st wiring layer, and the 2 nd wiring layer, and having a plurality of recesses provided in a region facing the 2 nd opening. The edge of the 2 nd opening is set back from the edge of the 1 st opening in a direction away from the center of the 1 st opening. The concave portion has a circular opening and a concave surface having a curvature, and is disposed in a region inside the edge of the 2 nd opening.)

1. A solid-state imaging device is provided,

the disclosed device is provided with:

a substrate;

pixels arranged on the surface of the substrate;

a 1 st wiring layer provided on the substrate and having a 1 st opening facing the pixel;

a 2 nd wiring layer provided on the 1 st wiring layer and having a 2 nd opening opposed to the 1 st opening; and

an insulating film covering the pixel, the 1 st wiring layer, and the 2 nd wiring layer, and having a plurality of recesses provided in a region facing the 2 nd opening,

the edge of the 2 nd opening is set back in a direction away from the center of the 1 st opening compared with the edge of the 1 st opening,

the concave portion has a circular opening and a concave surface having a curvature, and is disposed in a region inside the edge of the 2 nd opening.

2. The solid-state imaging device according to claim 1,

the opening of the recess has a region overlapping with the opening of another recess.

3. The solid-state imaging device according to claim 1,

the semiconductor device further includes a plurality of via holes provided between the 2 nd wiring layer and the 1 st wiring layer in the vicinity of the edge of the 2 nd opening.

4. The solid-state imaging device according to claim 3,

the via hole is a metal member.

5. The solid-state imaging device according to claim 3,

a plurality of the above-mentioned pixels are arranged in the 1 st direction,

the plurality of via holes are arranged in the 1 st direction.

6. The solid-state imaging device according to claim 5,

the plurality of via holes are arranged so as to sandwich an upper region of the pixel in a 2 nd direction intersecting the 1 st direction.

7. The solid-state imaging device according to claim 1,

a plurality of the above-mentioned pixels are arranged in the 1 st direction,

the edge of the 2 nd opening is set back from the edge of the 1 st opening in a 2 nd direction intersecting the 1 st direction.

8. The solid-state imaging device according to claim 7,

the 1 st wiring layer is also provided between the pixels adjacent in the 1 st direction.

9. The solid-state imaging device according to claim 8,

the 1 st openings are arranged in the 1 st direction.

10. The solid-state imaging device according to claim 9,

the 2 nd opening extends in a slit shape along the 1 st direction.

11. The solid-state imaging device according to claim 1,

the edge of the 1 st aperture is located in a region overlapping with the pixel.

12. The solid-state imaging device according to claim 1,

the line sensor has a pixel column in which a plurality of the pixels are arranged in the 1 st direction.

13. The solid-state imaging device according to claim 1,

further comprises a diffusion layer provided in a region close to the pixel on the surface of the substrate,

the 1 st wiring layer is connected to the diffusion layer.

14. The solid-state imaging device according to claim 1,

the 1 st wiring layer and the 2 nd wiring layer contain aluminum.

Technical Field

Background

In a solid-state imaging device, it is known that a phenomenon in which the spectral characteristics fluctuate due to interference between light directly incident on a photoelectric conversion element (pixel) and light reflected by a protective film occurs. This fluctuation causes image unevenness. Further, proposals have been made to reduce the undulation by forming a depression in the protective film.

Disclosure of Invention

Drawings

Fig. 1 is a schematic cross-sectional view of a solid-state imaging device according to an embodiment.

Fig. 2 is a schematic plan view of the solid-state imaging device according to the embodiment.

Fig. 3 is a schematic plan view of the solid-state imaging device according to the embodiment.

Fig. 4 is a schematic cross-sectional view of the solid-state imaging device according to the embodiment.

Fig. 5 is a schematic plan view of the solid-state imaging device according to the embodiment.

Fig. 6 is a schematic cross-sectional view of the solid-state imaging device according to the embodiment.

Fig. 7 is a schematic plan view of the solid-state imaging device according to the embodiment.

Fig. 8 is a schematic plan view showing a method of forming a recess in the solid-state imaging device according to the embodiment.

Fig. 9 is a graph showing a relationship between the fluctuation amount of the spectral characteristic and the area of the concave portion.

Embodiments relate generally to a solid-state imaging device.