阅读说明：本技术 一种led显示屏及其制作方法 (LED display screen and manufacturing method thereof ) 是由 林健源 罗崇辉 于 2018-08-07 设计创作，主要内容包括：本发明公开一种LED显示屏及其制作方法，其中，包括基板及设置在基板上的若干LED结构单元，所述LED结构单元包括：制备在基板上的TFT结构、制备在基板上的LED晶粒以及填充在TFT结构与LED晶粒之间的第一绝缘层，所述TFT结构与电源正极相接，所述LED晶粒的正极通过第一导线与TFT结构相接，所述LED晶粒的负极与电源负极相接。本发明解决了现有技术在制作过程mini LED或micro LED时存在LED巨量转移及粘接对位难的问题。(The invention discloses an LED display screen and a manufacturing method thereof, wherein the LED display screen comprises a substrate and a plurality of LED structural units arranged on the substrate, and the LED structural units comprise: the LED light source comprises a TFT structure prepared on a substrate, LED crystal grains prepared on the substrate and a first insulating layer filled between the TFT structure and the LED crystal grains, wherein the TFT structure is connected with the positive electrode of a power supply, the positive electrode of the LED crystal grains is connected with the TFT structure through a first lead, and the negative electrode of the LED crystal grains is connected with the negative electrode of the power supply. The invention solves the problems of huge LED transfer and difficult bonding and contraposition in the manufacturing process of a mini LED or a micro LED in the prior art.)

1. The utility model provides a LED display screen which characterized in that, includes the base plate and sets up a plurality of LED constitutional units on the base plate, LED constitutional unit includes: the LED light source comprises a TFT structure prepared on a substrate, LED crystal grains prepared on the substrate and a first insulating layer filled between the TFT structure and the LED crystal grains, wherein the TFT structure is connected with the positive electrode of a power supply, the positive electrode of the LED crystal grains is connected with the TFT structure through a first lead, and the negative electrode of the LED crystal grains is connected with the negative electrode of the power supply.

2. The LED display screen of claim 1, wherein the TFT structure comprises a gate electrode deposited on a substrate, a second insulating layer deposited on the gate electrode, a TFT semiconductor active layer deposited on the second insulating layer, and a source electrode and a drain electrode spaced apart from each other and deposited on the TFT semiconductor active layer, a third insulating layer is filled between the source electrode and the drain electrode, the gate electrode controls the connection or disconnection between the source electrode and the drain electrode, the drain electrode is connected with the anode of the LED crystal grain through a first conducting wire, and the source electrode is connected with the anode of a power supply.

3. The LED display screen of claim 2, wherein the TFT semiconductor active layer comprises an active layer deposited on the second insulating layer, and a source contact and a drain contact which are deposited on the active layer at intervals, the active layer is an amorphous silicon semiconductor layer, the source contact and the drain contact are both phosphorus-containing amorphous silicon semiconductor layers, the source is deposited on the source contact, and the drain is deposited on the drain contact.

4. The LED display screen of claim 1, wherein the LED die comprises an N-type semiconductor layer deposited on the substrate, a P-type semiconductor layer and an LED die cathode deposited on the N-type semiconductor layer at intervals, and an LED die anode deposited on the P-type semiconductor layer, and a fourth insulating layer is filled between the LED die cathode and the LED die anode and the P-type semiconductor layer.

5. The LED display screen of claim 1, wherein the LED dies are red LED dies, green LED dies, or blue LED dies.

6. The LED display screen of claim 1, wherein the LED structural unit further comprises a negative electrode contact part prepared on the substrate and used for connecting with a negative electrode of a power supply, the negative electrode contact part and the LED crystal grains are filled with a fifth insulating layer, and the negative electrode contact part is communicated with the negative electrode of the LED crystal grains through a second lead.

7. The LED display screen of claim 1, wherein the material of the first insulating layer is silicon nitride.

8. A manufacturing method of an LED display screen is characterized by comprising the following steps:

providing a substrate, manufacturing a TFT structure and LED crystal grains on the substrate at intervals, filling a first insulating layer between the TFT structure and the LED crystal grains, and manufacturing a first lead communicated with the TFT structure and the LED crystal grains on the first insulating layer.

9. The method for manufacturing the LED display screen according to claim 8, wherein the step of manufacturing the TFT structure specifically comprises:

depositing a grid which can be connected with a high level on a substrate, depositing a second insulating layer on the grid, depositing an amorphous silicon semiconductor layer on the second insulating layer, depositing 2 phosphorus-containing amorphous silicon semiconductor layers on the amorphous silicon semiconductor layers at intervals, respectively depositing a drain electrode and a source electrode connected with a power supply positive electrode on the 2 phosphorus-containing amorphous silicon semiconductor layers, and filling third insulating layers among the 2 amorphous silicon semiconductor layers and between the source electrode and the drain electrode.

10. The method for manufacturing the LED display screen according to claim 8, wherein the step of manufacturing the LED crystal grain specifically comprises:

depositing an N-type semiconductor layer on the substrate, depositing a P-type semiconductor layer and an LED crystal grain cathode connected with a power supply cathode on the N-type semiconductor layer at intervals, depositing an LED crystal grain anode on the P-type semiconductor layer, and filling a fourth insulating layer between the LED crystal grain cathode and the LED crystal grain anode and between the LED crystal grain cathode and the P-type semiconductor layer.