阅读说明：本技术 一种十字梁膜应力集中微压传感器芯片及其制备方法 (Cross beam membrane stress concentration micro-pressure sensor chip and preparation method thereof ) 是由 王鸿雁 李学琛 关卫军 吴永顺 魏于昆 山涛 王爱华 付磊 赵立波 韩香广 皇咪 于 2021-04-27 设计创作，主要内容包括：本发明公开了一种十字梁膜应力集中微压传感器芯片及其制备方法,感器芯片包括承压薄膜、硅基底、压敏电阻条、金属引线和防过载玻璃基底等。具体结构为在硅基底背面刻蚀形成承压薄膜以及半岛与岛屿结构,在硅基底正面刻蚀四块钻石形区域形成十字梁。芯片背腔相邻的岛屿与岛屿之间、岛屿与半岛之间的间隙所对应的芯片正面形成应力集中区域,四个压敏电阻条布置在该应力集中区域上,利用重掺杂欧姆接触区、金属引线以及金属焊盘将压敏电阻条连接形成惠斯通电桥,十字梁的存在可以进一步提高压敏电阻条处的应力集中效果。(The invention discloses a cross beam membrane stress concentration micro-pressure sensor chip and a preparation method thereof. The specific structure is that a pressure-bearing film and a peninsula and island structure are formed on the back surface of a silicon substrate through etching, and four diamond-shaped areas are formed on the front surface of the silicon substrate through etching to form a cross beam. Stress concentration areas are formed on the front surfaces of the chips corresponding to gaps between the islands and the islands adjacent to the back cavity of the chip and between the islands and the peninsulas, the four piezoresistor strips are arranged on the stress concentration areas, the piezoresistor strips are connected to form a Wheatstone bridge by utilizing the heavily doped ohmic contact areas, the metal leads and the metal bonding pads, and the stress concentration effect at the piezoresistor strips can be further improved due to the existence of the cross beams.)

1. The cross beam film stress concentration micro-pressure sensor chip is characterized by comprising a silicon substrate (1) and a glass substrate (8) bonded with the silicon substrate (1), wherein a back cavity is etched on the back surface of the silicon substrate (1), a cross beam (3) is connected to the front surface of a pressure-bearing film (2), and four piezoresistor strips are arranged on the cross beam (3); the bottom surface of the back cavity is a pressure-bearing film (2), and the back surface of the pressure-bearing film (2) is connected with a first peninsula (9-1), a second peninsula (9-2), a first island (10-1), a second island (10-2) and a third island (10-3); the first peninsula (9-1), the second peninsula (9-2) and the inner side wall of the back cavity are connected, the first peninsula (9-1), the first island (10-1), the second island (10-2), the third island (10-3) and the second peninsula (9-2) are sequentially arranged at intervals to form four gaps, the four piezoresistor strips are respectively arranged right above the four gaps, and the four piezoresistor strips are connected with the metal bonding pad (7) through the metal lead (6) to form a Wheatstone bridge.

2. The cross beam membrane stress concentration micro-pressure sensor chip as claimed in claim 1, wherein the four gaps have the same width.

3. A cross beam membrane stress concentration micro-pressure sensor chip according to claim 1, characterized in that the pressure-bearing membrane (2) is octagonal.

4. The cross beam membrane stress concentration micro-pressure sensor chip as claimed in claim 3, wherein the height of the cross beam (3) is 10% -150% of the thickness of the pressure-bearing membrane (2).

5. The cross beam membrane stress concentration micro-pressure sensor chip as claimed in claim 1, wherein the glass substrate (8) is provided with a groove (11) and a through hole (12), and the width of the groove (11) is greater than the width of the back cavity.

6. The cross-beam membrane stress concentration micropressure sensor chip according to claim 1, wherein the width of the first island (10-1), the second island (10-2), the third island (10-3), the first peninsula (9-1) and the second peninsula (9-2) are equal and are all 160 μm to 250 μm.

7. A crossbeam membrane stress concentration micropressure sensor chip according to claim 1, characterized in that the four piezoresistive strips are connected with metal leads (6) through ohmic contact areas (5).

8. The method for preparing the cross beam membrane stress concentration micro-pressure sensor chip as claimed in claim 1, characterized by comprising the following steps:

step 1, depositing silicon dioxide on the front side of an SOI (silicon on insulator) silicon chip, etching the silicon dioxide above four piezoresistor strip areas, carrying out boron ion light doping on top monocrystalline silicon exposed out of the SOI silicon chip to form four piezoresistor strips, and then removing the residual silicon dioxide;

step 2, depositing a layer of silicon dioxide on the front side of the structure obtained in the step 1, and removing the silicon dioxide in the lead hole area;

step 3, sputtering metal on the front surface of the structure obtained in the step 2, photoetching by using a metal lead plate, and forming a metal lead (6) and a metal bonding pad (7);

step 4, carrying out photoetching on the back surface of the SOI chip obtained in the step 3, and removing redundant silicon by taking a silicon dioxide buried layer (13) in the SOI chip as an etching stop layer to form a back cavity, a first peninsula (9-1), a second peninsula (9-2), a first island (10-1), a second island (10-2) and a third island (10-3);

step 5, photoetching and etching the front surface of the structure obtained in the step 6 to form a cross beam (3) and obtain a silicon substrate (1);

and 6, bonding the silicon substrate (1) manufactured in the step 5 with a glass substrate (8) to obtain the micro-pressure sensor chip.

9. The method for preparing the stress concentration micropressure sensor chip with the cross beam membrane as claimed in claim 8, wherein after step 1 is completed and before step 2 is started, a layer of silicon dioxide is deposited on the front surface of the structure obtained in step 1, the silicon dioxide above the ohmic contact region is etched away, the top layer of monocrystalline silicon above the ohmic contact region (5) is exposed, boron ion heavy doping is carried out on the top layer of monocrystalline silicon to form the ohmic contact region (5), and then the residual silicon dioxide is removed and annealed.

Technical Field

The invention belongs to the technical field of micro-electromechanical sensors, and particularly relates to a cross beam film stress concentration micro-pressure sensor chip and a preparation method thereof.

Background

With the development of the MEMS technology, the MEMS micro-pressure sensor has been widely applied to the fields of aerospace, food industry, smart home, biomedical, and the like; with the rapid development of various fields, higher requirements are put forward on the performance, the volume and the like of the sensor, and particularly, an MEMS micro-pressure sensor with stable performance, high dynamic performance, high sensitivity and high linearity is urgently needed to guarantee in the field of biomedicine.

According to different measurement principles, the MEMS micro-pressure sensor is mainly classified into a piezoresistive type, a piezoelectric type, a capacitive type, a resonant type, and the like. Compared with MEMS micro-pressure sensors based on other principles, the MEMS piezoresistive micro-pressure sensor has the advantages of wide measurement range, high linearity, simple back-end processing circuit, high sensitivity, low processing cost and the like, thereby being widely applied.

The sensitivity and nonlinearity of the MEMS piezoresistive micro-pressure sensor are important indicators, but the dynamic performance of the sensor is not negligible. The micro-pressure sensors in the market mostly seek high sensitivity and low non-linear indexes, and neglect the dynamic performance. The defects of sensitivity and nonlinearity can be compensated by the back-end processing circuit, and the dynamic performance influences the response speed and stability of the sensor and cannot be compensated by the back-end processing circuit.

The sensitivity of the sensor can be improved by reducing the thickness of the film and increasing the size of the diaphragm, but the rigidity of the pressure-bearing film is reduced, the linearity of the sensor is reduced, and the dynamic performance of the sensor is influenced. In the design of the MEMS piezoresistive micro-pressure sensor, the mutual restriction relationship between the sensitivity of the sensor and the linearity and the dynamic performance of the sensor is weakened, and the improvement of the linearity and the dynamic performance of the sensor is particularly important under the condition of ensuring the sensitivity.

At present, the minimum measuring range of a mature MEMS piezoresistive micro-pressure sensor product in the market is mostly in the kPa level, only the Pa level product has low sensitivity and poor nonlinear and dynamic performances, and accurate measurement is difficult to realize. Therefore, how to reduce the nonlinearity and improve the dynamic performance of the sensor on the premise of ensuring the sensitivity of the sensor is a difficult point which needs to be broken through urgently for reliable and accurate measurement of the MEMS piezoresistive micro-pressure sensor.

Disclosure of Invention

The invention provides a cross beam membrane stress concentration micro-pressure sensor chip and a preparation method thereof.

In order to achieve the purpose, the cross beam film stress concentration micro-pressure sensor chip comprises a silicon substrate and a glass substrate bonded with the silicon substrate, wherein a back cavity is etched on the back surface of the silicon substrate, a cross beam is connected with the front surface of a pressure-bearing film, and four piezoresistor strips are arranged on the cross beam; the bottom surface of the back cavity is a pressure-bearing film, and the back surface of the pressure-bearing film is connected with a first peninsula, a second peninsula, a first island, a second island and a third island; the first peninsula, the second peninsula are connected with the inner side wall of the back cavity, the first peninsula, the first island, the second island, the third island and the second peninsula are sequentially arranged at intervals and form four gaps, the four piezoresistor strips are respectively arranged right above the four gaps, and the four piezoresistor strips are connected with the metal bonding pad through metal leads to form a Wheatstone bridge.

Further, the four gaps are the same in width.

Further, the pressure-bearing film is octagonal.

Furthermore, the height of the cross beam is 10% -150% of the thickness of the pressure-bearing film.

Furthermore, a groove and a through hole are formed in the glass substrate, and the width of the groove is larger than that of the back cavity.

Furthermore, the widths of the first island, the second island, the third island, the first peninsula and the second peninsula are equal and are all 160-250 μm.

Furthermore, the four piezoresistor strips are connected with the metal lead wires through ohmic contact regions.

A preparation method of a cross beam membrane stress concentration micro-pressure sensor chip comprises the following steps:

step 1, depositing silicon dioxide on the front side of an SOI (silicon on insulator) silicon chip, etching the silicon dioxide above four piezoresistor strip areas, carrying out boron ion light doping on top monocrystalline silicon exposed out of the SOI silicon chip to form four piezoresistor strips, and then removing the residual silicon dioxide;

step 2, depositing a layer of silicon dioxide on the front side of the structure obtained in the step 1, and removing the silicon dioxide in the lead hole area;

step 3, sputtering metal on the front surface of the structure obtained in the step 2, photoetching by using a metal lead plate, and forming a metal lead and a metal bonding pad;

step 4, carrying out photoetching on the back surface of the SOI chip obtained in the step 3, and removing redundant silicon by taking a silicon dioxide buried layer (13) in the SOI chip as an etching stop layer to form a back cavity, a first peninsula, a second peninsula, a first island, a second island and a third island;

step 5, photoetching and etching the front surface of the structure obtained in the step 6 to form a cross beam and obtain a silicon substrate;

and 6, bonding the silicon substrate manufactured in the step 5 with a glass substrate to obtain the micro-pressure sensor chip.

Further, after the step 1 is finished and before the step 2 is started, a layer of silicon dioxide is deposited on the front surface of the structure obtained in the step 1, the silicon dioxide above the ohmic contact area is etched, the top layer of monocrystalline silicon above the ohmic contact area is exposed, boron ion heavy doping is carried out on the top layer of monocrystalline silicon to form the ohmic contact area, and then the residual silicon dioxide is removed and annealed.

Compared with the prior art, the invention has at least the following beneficial technical effects:

the sensor chip provided by the invention has the characteristics of higher sensitivity, high linearity, high dynamic performance, low cost and the like, and is favorable for realizing batch production.

According to the invention, peninsula and island structures are additionally arranged in the back cavity of the pressure-bearing film, gaps exist between the islands and between the peninsulas, and the stress concentration effect is generated due to the abrupt change of the rigidity of the gaps. By arranging the piezoresistive strips directly above the gap, the sensitivity of the sensor can be greatly improved. In addition, due to the introduction of the peninsula and island structures, the rigidity of the pressure-bearing film is greatly increased, and the problem of nonlinearity caused by geometric nonlinearity of the pressure-bearing film is reduced; according to natural frequency f₀Formula for calculation

Where k represents the stiffness of the thin pressure-bearing membrane and m represents the mass of the pressure-bearing membrane. The natural frequency of the sensor can be improved by properly adjusting the size of the islands to change the rigidity and the quality of the pressure-bearing film.

Although the nonlinearity of the sensor can be solved through subsequent processing, in some practical applications, the pressure value is directly read from the output of the sensor, and the lower nonlinearity can also reduce the difficulty of the subsequent processing. The increase in natural frequency can reduce the response time of the sensor and also improve the reliability of the sensor.

In order to further improve the sensitivity of the sensor chip, transverse rigidity mutation is introduced by manufacturing the cross beam, so that transverse stress is concentrated on the cross beam. The peninsula, island structure and cross beam structure are introduced simultaneously, so that the stress concentration area is limited at the transverse position and the longitudinal position, the area of the stress concentration area is further reduced, a better stress concentration effect is obtained, the amplitude of voltage output converted by piezoresistive effect is improved, and finally the measurement sensitivity of the sensor is improved. Meanwhile, due to the cross beam structure, the rigidity of the pressure-bearing film is increased, the flexural deformation of the pressure-bearing diaphragm is reduced, and the nonlinearity of the sensor is reduced.

Furthermore, the widths of the four gaps are the same, and the stress sizes of the four stress concentration areas are consistent.

Furthermore, the pressure-bearing film is octagonal, so that the bonding area and the bonding strength can be increased under the condition that the stress is hardly reduced compared with a square membrane.

Furthermore, the height of the cross beam is 10% -150% of the thickness of the pressure-bearing film, the effect of increasing stress is not obvious when the height of the cross beam is lower, etching time and etching cost can be increased when the height of the cross beam is higher, and the stress is not greatly improved.

Furthermore, a groove and a through hole are formed in the glass substrate, the width of the groove is larger than that of the back cavity, and the bonded glass substrate cannot block the island and the peninsula from moving.

Further, the widths of the first island, the second island, the third island, the first peninsula and the second peninsula are all equal and are 160-250 μm, the widths of the islands and the peninsulas are small and are not enough for arranging piezoresistor strips with enough length, the widths of the islands and the peninsulas are large, the width of a stress concentration area is increased, and the sensitivity of the sensor is reduced.

Furthermore, the four piezoresistor strips are connected with the metal lead through ohmic contact regions, and the ohmic contact regions are connected with the piezoresistors and the metal lead, so that the direct contact resistance between the piezoresistors and the metal lead is reduced.

The preparation method of the sensor chip provided by the invention adopts conventional mature processes, does not need to newly build a production line or develop a new production process, and is low in cost, high in reliability and easy for batch production.

Drawings

FIG. 1 is a schematic axial view of the present invention;

FIG. 2 is a schematic structural view of the present invention;

FIG. 3 is a schematic front view of the present invention;

FIG. 4 is a schematic backside isometric view of the present invention;

FIG. 5 is a schematic axial view of an overload protective glass substrate according to the present invention;

FIG. 6a is an enlarged partial view A of FIG. 1;

FIG. 6B is an enlarged view B of the portion of FIG. 1;

FIG. 7 is a schematic diagram of a Wheatstone bridge formed by the varistor strips of the present invention;

FIG. 8 is a schematic flow chart of a manufacturing process of the present invention;

FIG. 9a is a schematic view of the present invention at the cross-section of FIG. 3A-A in an unloaded state;

FIG. 9b is a schematic view of the invention at section line 3A-A in a loaded state;

FIG. 9c is a schematic view of the present invention at the cross-section of FIG. 3A-A in an overload condition;

FIG. 10a is a schematic view of the stress distribution under pressure according to the present invention;

FIG. 10b is a schematic view of the stress distribution under pressure of a flat membrane structure of the same size as the present invention;

FIG. 11a is a schematic view of a modal analysis of the present invention;

FIG. 11b is a schematic diagram of the modal analysis of a flat membrane structure of the same size as the present invention.

In the drawings: 1. silicon substrate, 2, pressure-bearing film, 3, cross beam, 4-1, first piezoresistor strip, 4-2, second piezoresistor strip, 4-3, third piezoresistor strip, 4-4-fourth piezoresistor strip, 5, ohmic contact area, 6, metal lead, 7, metal pad, 8, glass substrate, 9-1, first peninsula, 9-2, second peninsula, 10-1, first island, 10-2, second island, 10-3, third island, 11, groove, 12, through hole, 13, top monocrystalline silicon, 14, buried silicon dioxide layer, 15 bottom monocrystalline silicon.

Detailed Description

In order to make the objects and technical solutions of the present invention clearer and easier to understand. The present invention will be described in further detail with reference to the following drawings and examples, wherein the specific examples are provided for illustrative purposes only and are not intended to limit the present invention.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified. In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Referring to fig. 1 and 2, the cross beam membrane stress concentration micro-pressure sensor chip comprises a silicon substrate 1 and a glass substrate 8 which are bonded together, a back cavity is etched on the back of the silicon substrate 1, and the silicon substrate 1 is structurally divided into a pressure-bearing membrane front structure layer and a back cavity structure layer.

Referring to fig. 3, the pressure-bearing film front structure layer includes: the pressure-bearing membrane 2 of octagon, lie in the cross 3 of the positive median position of pressure-bearing membrane 2, the cross 3 includes the crossbeam and vertical beam perpendicular to each other, the height of cross is 10% -150% of the thickness of pressure-bearing membrane 2, the width is 100 mu m-300 mu m. The cross beam 3 and the pressure-bearing film 2 have a height difference to form rigidity mutation, and a stress concentration area is formed on the cross beam 3.

Referring to fig. 4, the cavity-backed structure layer mainly includes: a first peninsula 9-1 and a second peninsula 9-2 connected to the side walls of the silicon substrate, and a first island 10-1, a second island 10-2 and a third island 10-3 connected to the backside of the pressure-bearing film 2. The first peninsula 9-1, the first island 10-1, the second island 10-2, the third island 10-3 and the second peninsula 9-2 are arranged in sequence, and axes thereof are located on the same straight line. A first gap is formed between the first peninsula 9-1 and the first island 10-1, a second gap is formed between the first island 10-1 and the second island 10-2, a third gap is formed between the second island 10-2 and the third island 10-3, a fourth gap is formed between the third island 10-3 and the second peninsula 9-2, and the width of the gap is 20 μm to 100 μm, so that stress is concentrated in the gap region. The width of the first island 10-1, the second island 10-2, the third island 10-3, the first peninsula 9-1 and the second peninsula 9-2 is consistent and is 160-250 μm, and the length of all peninsulas and islands is optimally designed based on the maximum measurement sensitivity of the sensor.

Referring to fig. 1 to 4, a first varistor strip 4-1, a second varistor strip 4-2, a third varistor strip 4-3 and a fourth varistor strip 4-4 are arranged on a cross beam 3. Wherein, the first piezoresistor strip 4-1, the second piezoresistor strip 4-2, the third piezoresistor strip 4-3 and the fourth piezoresistor strip 4-4 are all positioned on the beam and are respectively positioned right above a gap between the first peninsula 9-1 and the first island 10-1, the first island 10-1 and the second island 10-2, the second island 10-2 and the third island 10-3, and the third island 10-3 and the second peninsula 9-2, the first piezoresistor strip 4-1, the second piezoresistor strip 4-2, the third piezoresistor strip 4-3 and the fourth piezoresistor strip 4-4 are the same in size and in the same direction along the crystal direction with the largest piezoresistive coefficient, the ohmic contact zone 5 and the connecting metal lead 6 connect the four first piezoresistor strip 4-1, the four second piezoresistor strip 4-2, the third varistor strip 4-3 and the fourth varistor strip 4-4 are connected in sequence to form a full open loop wheatstone bridge, and input and output of electrical signals are realized through the metal pad 7, as shown in fig. 7.

Referring to fig. 5, the glass substrate 8 is an overload prevention glass substrate, a groove 11 and a through hole 12 are etched on the substrate 8, the through hole 12 penetrates through the bottom surface of the groove, the width of the groove 11 is slightly greater than the width of the pressure-bearing film 2, the depth of the groove 11 is determined by the displacement of the pressure-bearing film 2 at full scale and the overload prevention multiple, and the first island 10-1, the second island 10-2 and the third island 10-3 do not interfere with the groove 11 at the maximum overload prevention time. The through hole 12 is formed by machining or laser processing to realize differential pressure measurement.

Referring to fig. 6a and 6b, the first varistor strip 4-1, the second varistor strip 4-2, the third varistor strip 4-3 and the fourth varistor strip 4-4 all adopt a single resistor strip structure, the size and the structure are the same, the initial resistance values of the four resistor strips are the same, and the length directions of the four resistor strips are along the crystal direction of the maximum piezoresistive coefficient. The first piezoresistor strip 4-1, the second piezoresistor strip 4-2, the third piezoresistor strip 4-3 and the fourth piezoresistor strip 4-4 are respectively connected with the metal lead 6 through four ohmic contact regions 5, and the metal lead 6 connects the first piezoresistor strip 4-1, the second piezoresistor strip 4-2, the third piezoresistor strip 4-3 and the fourth piezoresistor strip 4-4 into a full-open-loop Wheatstone bridge.

The working principle of the cross beam membrane stress concentration micro-pressure sensor chip is as follows:

in the unloaded state, the cross-sectional view of the chip of the invention is shown in FIG. 9 a; fig. 9b shows that when the front surface of the sensor chip is subjected to a pressure P, the pressure-bearing film 2 begins to sag, wherein the area of the piezoresistive strip 4-1 directly above the gap between the first island 9-1 and the first island 10-1 is a tensile area, and the resistance value thereof increases according to the piezoresistive effect of silicon; the area of the piezoresistor strip 4-3 right above the gap between the second peninsula 9-2 and the third island 10-3 is also a tensile area, and the resistance value is increased according to the piezoresistance effect of silicon; the region of the second piezoresistor strip 4-2 right above the gap between the first island 10-1 and the second island 10-2 is a pressed region, and the resistance value is reduced according to the piezoresistive effect of silicon; the fourth piezo-resistive strip 4-4 directly above the gap between the second island 10-2 and the third island 10-3 is also a stressed region, and its resistance value decreases according to the piezoresistive effect of silicon. The two piezoresistors with increased resistance values and the two piezoresistors with reduced resistance values can form a Wheatstone full bridge through connection, so that the measurement sensitivity is improved.

The cross beam 3 enables the stress of the areas where the first piezoresistor strip 4-1, the second piezoresistor strip 4-2, the third piezoresistor strip 4-3 and the fourth piezoresistor strip 4-4 are located to be more concentrated, the resistance value of the piezoresistor can be changed greatly, and the measurement sensitivity of the sensor is improved. The structure of the first peninsula 9-1, the second peninsula 9-2, the first island 10-1, the second island 10-2 and the third island 10-3 allows the stiffness of the pressure-bearing film 2 to be further increased while reducing the nonlinearity of the sensor.

Placing all peninsulas in the same line with the islands allows for a lower piezoresistive nonlinearity of the sensor. Recording voltage dependent resistor strip R₁、R₂、R₃、R₄The piezoresistive nonlinearity of (1) is NL₁、NL₂、NL₃、NL₄For a sensor structure with peninsulas and islands uniformly arranged on the edge of the pressure-bearing film, the overall non-linearity NL is₁The calculation formula of (2) is as follows:

for sensor structures with peninsula and island structures arranged in a single straight line, the overall nonlinearity NL is₂The calculation formula of (2) is as follows:

this indicates that: the nonlinearities of the four piezoresistors can cancel each other to a certain extent when the peninsulas and the island structure are arranged on the same straight line. Therefore, the pressure sensor using the structure in which the peninsula and the island structure are arranged on the same straight line has a characteristic of being able to reduce the overall nonlinearity.

Referring to fig. 9c, when the sensor is overloaded, the first, second and third islands 10-1, 10-2 and 10-3 begin to contact the bottom of the groove 12, and the substrate 8 plays a role of limiting and protecting, so that further deformation of the film is limited, and the pressure-bearing film 2 can be prevented from being damaged due to excessive stress.

Referring to fig. 8, the method for manufacturing the sensor chip includes the following steps:

step 1, cleaning an SOI silicon chip, wherein the SOI silicon chip consists of top monocrystalline silicon 13, a buried silicon dioxide layer 14 and bottom monocrystalline silicon 15 which are sequentially arranged;

step 2, depositing a layer of silicon dioxide on the front surface of the cleaned SOI silicon wafer through a Plasma Enhanced Chemical Vapor Deposition (PECVD) method or other methods, etching the silicon dioxide above the region where the first piezoresistor strip 4-1, the second piezoresistor strip 4-2, the third piezoresistor strip 4-3 and the fourth piezoresistor strip 4-4 are located by utilizing a piezoresistor plate to expose top layer monocrystalline silicon, lightly doping the exposed top layer monocrystalline silicon with boron ions to form a first piezoresistor strip 4-1, a second piezoresistor strip 4-2, a third piezoresistor strip 4-3 and a fourth piezoresistor strip 4-4, and then removing the residual silicon dioxide;

step 3, depositing a layer of silicon dioxide on the front surface of the structure obtained in the step 2 in a PECVD (plasma enhanced chemical vapor deposition) mode and other modes, etching the silicon dioxide above an ohmic contact area by using an ohmic contact plate to expose top monocrystalline silicon of the ohmic contact area, carrying out boron ion heavy doping on the top monocrystalline silicon to form an ohmic contact area 5, and then removing the residual silicon dioxide and annealing;

step 4, depositing silicon dioxide on the front surface of the structure obtained in the step 3 in a PECVD (plasma enhanced chemical vapor deposition) mode and the like, and removing the silicon dioxide in the metal lead hole area by using a lead hole plate;

step 5, sputtering metal on the front surface of the structure obtained in the step 4, photoetching by using a metal lead plate, and forming a metal lead 6 and a metal pad 7 by stripping, corrosion and the like;

step 6, carrying out photoetching on the back surface of the structure in the step 5 by using a back cavity etching plate, and removing redundant silicon by using a silicon dioxide buried layer 13 in the SOI wafer as an etching stop layer in a dry method to form a back cavity, and a first peninsula 9-1, a second peninsula 9-2, a first island 10-1, a second island 10-2 and a third island 10-3 which are positioned in the back cavity, wherein the bottom surface of the back cavity is the pressure-bearing film 2;

step 7, photoetching and dry etching are carried out on the front surface of the structure obtained in the step 6 to form a cross beam 3, and a silicon substrate 1 is obtained;

step 8, etching the overload-proof glass by using a glass etching plate to form a groove 11, and manufacturing a through hole 12 on the overload-proof glass in a mechanical and laser processing mode to obtain a substrate 8;

and 9) carrying out anodic bonding on the silicon substrate 1 manufactured in the step 7 and the glass substrate 8) processed in the step 8 to obtain the micro-pressure sensor chip.

Referring to fig. 10a and 10b, the stress of the invention is improved by over 100% under the pressure of 500Pa relative to the flat membrane structure with the same size as the invention, so the invention has the characteristic of high sensitivity.

Referring to fig. 11a and 11b, the first-order natural frequency of the present invention is improved by more than 20% compared with the same-sized flat membrane structure, so the present invention has the characteristic of good dynamic performance.

Compared with the traditional C-type film and E-type film structure sensor chips, the stress concentration micro-pressure sensor chip with the crossed beam film has the advantages that the integral rigidity of the pressure-bearing film 2 is enhanced due to the adoption of the structures of the first peninsula 9-1, the second peninsula 9-2, the first island 10-1, the second island 10-2 and the third island 10-3, and the dynamic performance of the sensor is improved; transverse and longitudinal rigidity abrupt changes are formed simultaneously by adopting the first peninsula 9-1, the second peninsula 9-2, the first island 10-1, the gap between the second island 10-2 and the third island 10-3 and the cross beam, so that the stress of the area where the first piezoresistor strip 4-1, the second piezoresistor strip 4-2, the third piezoresistor strip 4-3 and the fourth piezoresistor strip 4-4 are located is enhanced. Therefore, the sensor chip has the characteristics of high sensitivity, good linearity, strong overload prevention capability, good dynamic performance and the like.

The main technical indexes achieved by the invention are as follows:

1. measurement range: 0 to 500 Pa;

2. and (3) measuring precision: better than 0.5% FS;

3. sensitivity: greater than 30 μ V/V/Pa;

4. working temperature: -50 to 120 ℃;

5. natural frequency: greater than 5 kHz.

The above description is only one embodiment of the present invention, and not all or only one embodiment, and any equivalent alterations made by those skilled in the art after reading the present specification are covered by the claims of the present invention.