Composition for forming insulating film, and semiconductor device provided with insulating film
阅读说明：本技术 绝缘膜形成用组合物、绝缘膜、及具备绝缘膜的半导体器件 (Composition for forming insulating film, and semiconductor device provided with insulating film ) 是由 三宅弘人 辻直子 山川章 于 2018-04-26 设计创作，主要内容包括：本发明提供可形成绝缘性及耐热性优异、可抑制翘曲的发生、密合性优异的绝缘膜的绝缘膜形成用组合物。本发明的绝缘膜形成用组合物包含含有硅氧烷结构单元的聚有机倍半硅氧烷作为聚合性化合物,在所述聚有机倍半硅氧烷中,下述式(I)：[R<Sup>a</Sup>SiO<Sub>3/2</Sub>]表示的结构单元与下述式(II)：[R<Sup>a</Sup>SiO<Sub>2/2</Sub>(OR<Sup>b</Sup>)]表示的结构单元的合计为硅氧烷结构单元总量的55摩尔％以上,该聚有机倍半硅氧烷的数均分子量为500～10000,环氧当量为200～2000g/eq。(The invention provides a composition for forming an insulating film, which can form an insulating film with excellent insulating property and heat resistance, can inhibit the generation of warping and has excellent adhesion. The composition for forming an insulating film of the present invention comprises, as a polymerizable compound, a polyorganosilsesquioxane containing a siloxane structural unit, wherein the polyorganosilsesquioxane has the following formula (I): [ R ] a SiO 3/2 ]Structural units represented by the following formula (II): [R a SiO 2/2 (OR b )]The total of the structural units is more than 55 mol percent of the total siloxane structural units, the number average molecular weight of the polyorganosilsesquioxane is 500-10000, and the epoxy equivalent is 200-2000 g/eq.)
1. A composition for forming an insulating film, comprising a polyorganosilsesquioxane containing a siloxane structural unit as a polymerizable compound,
in the polyorganosilsesquioxane, the total of the structural unit represented by the following formula (I) and the structural unit represented by the following formula (II) is 55 mol% or more of the total of the siloxane structural units,
[RaSiO3/2] (I)
in the formula (I), RaRepresents an epoxy group-containing group, a substituted or unsubstituted aryl group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, or a hydrogen atom,
[RaSiO2/2(ORb)] (II)
in the formula (II), RaSynonymous with the above, RbRepresents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms,
the polyorganosilsesquioxane has a number average molecular weight of 500 to 10000 and an epoxy equivalent of 200 to 2000 g/eq.
2. The composition for forming an insulating film according to claim 1, wherein the group containing an epoxy group is at least 1 group selected from the following formulae (1a) to (1d),
in the formula, R1a、R1b、R1c、R1dThe same or different alkylene groups each represent a linear or branched alkylene group.
3. The composition for forming an insulating film according to claim 1 or2, wherein,
the composition for forming an insulating film contains, as a polymerizable compound, a compound having at least 1 polymerizable group selected from an epoxy group, an oxetane group, a vinyl ether group, an acid anhydride group and a phenolic hydroxyl group and containing no siloxane structural unit in a range of 150 parts by weight or less based on 100 parts by weight of the polyorganosilsesquioxane.
4. The composition for forming an insulating film according to any one of claims 1 to 3, which contains a cationic polymerization initiator and/or a curing accelerator.
5. An insulating film formed from a cured product of the composition for forming an insulating film according to any one of claims 1 to 4.
6. A semiconductor device comprising the insulating film according to claim 5.
Technical Field
The present invention relates to an insulating film-forming composition, an insulating film formed from a cured product of the insulating film-forming composition, and a semiconductor device provided with the insulating film. The present application claims the priority of Japanese patent application No. 2017 and 093056, filed on the sun in 2017, 5, 9, incorporated herein by reference.
Background
An interlayer insulating film in a semiconductor device is required to have insulation properties, heat resistance, and adhesion. As such an insulating film, conventionally, silicon dioxide (SiO) formed by a vacuum process such as a vapor deposition (CVD) method has been often used2) However, the membrane has problems that the operation efficiency is poor and a large-scale apparatus is required. Therefore, the SOD method (Spin-On-Coat method) has attracted attention, in which an insulating film is formed by applying a composition for forming an insulating film while rotating a semiconductor wafer and then curing the composition.
However, in the SOD method, there have been problems that a semiconductor device is "warped" due to shrinkage when the composition for forming an insulating film is cured and the insulating film is likely to be peeled off, because thinning of the semiconductor wafer has been progressed in recent years. For example, patent document 1 describes that a polyimide film obtained by spin-coating a polyamic acid and subjecting the polyamic acid to dehydration condensation is used as an interlayer insulating film, but since the polyamic acid undergoes large curing shrinkage during dehydration condensation, it is difficult to suppress "warpage" of a semiconductor device, and the insulating film is likely to peel off as the semiconductor device undergoes "warpage".
In addition, the semiconductor device may be exposed to a high temperature of 300 ℃ or higher at the time of mounting the substrate, and the difference in the linear thermal expansion coefficient between the semiconductor wafer and the insulating film may cause the occurrence of "warpage" in such a high temperature environment.
Disclosure of Invention
Problems to be solved by the invention
Accordingly, an object of the present invention is to provide a composition for forming an insulating film, which can form an insulating film having excellent insulating properties and heat resistance, can suppress the occurrence of warpage, and has excellent adhesion.
Another object of the present invention is to provide an insulating film which has excellent insulating properties and heat resistance, can suppress the occurrence of warpage, and has excellent adhesion.
Another object of the present invention is to provide a semiconductor device including an insulating film having the above characteristics.
Means for solving the problems
As a result of intensive studies to solve the above problems, the present inventors have found that an insulating film-forming composition containing polyorganosilsesquioxane having a specific epoxy equivalent and a specific molecular weight can efficiently form a polymer by cationic polymerization, and can suppress the emission of low-molecular-weight components (for example, emission as exhaust gas) because the proportion of low-molecular-weight components remaining without polymerization can be suppressed to an extremely low level, thereby suppressing curing shrinkage, suppressing "warpage" of a semiconductor device due to curing shrinkage, and forming an insulating film having excellent adhesion, and that a cured product of the composition has excellent insulation properties and heat resistance. The present invention has been completed based on these findings.
That is, the present invention provides a composition for forming an insulating film, which comprises polyorganosilsesquioxane containing a siloxane structural unit as a polymerizable compound,
in the polyorganosilsesquioxane, the total of the structural unit represented by the following formula (I) and the structural unit represented by the following formula (II) is 55 mol% or more of the total of the siloxane structural units,
[RaSiO3/2] (I)
[ in the formula (I), RaRepresents an epoxy group-containing group, a substituted or unsubstituted aryl group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted alkyl group, an optionally substituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted,Substituted or unsubstituted alkenyl, or hydrogen atom]
[RaSiO2/2(ORb)] (II)
[ in the formula (II), RaAs defined above, RbRepresents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms]
The number average molecular weight of the polyorganosilsesquioxane is 500 to 10000, and the epoxy equivalent is 200 to 2000 g/eq.
The present invention also provides the above-mentioned composition for forming an insulating film, wherein the epoxy-containing group is at least 1 group selected from the following formulae (1a) to (1d),
[ chemical formula 1]
(in the formula, R1a、R1b、R1c、R1dThe same or different, each represents a linear or branched alkylene group).
The present invention also provides the composition for forming an insulating film, wherein the composition for forming an insulating film contains a compound having at least 1 polymerizable group selected from an epoxy group, an oxetane group, a vinyl ether group, an acid anhydride group and a phenolic hydroxyl group (excluding a compound containing a siloxane structural unit) as a polymerizable compound in an amount of 150 parts by weight or less based on 100 parts by weight of the polyorganosilsesquioxane.
The present invention also provides the above-mentioned composition for forming an insulating film, which contains a cationic polymerization initiator and/or a curing accelerator.
The present invention also provides an insulating film formed from a cured product of the above-described composition for forming an insulating film.
In addition, the present invention provides a semiconductor device including the above-described insulating film.
ADVANTAGEOUS EFFECTS OF INVENTION
The composition for forming an insulating film of the present invention has the above-described configuration, and therefore, by applying the composition and then performing light irradiation and/or heat treatment, an insulating film having excellent insulating properties and heat resistance, suppressed occurrence of warpage, and excellent adhesion can be formed. Therefore, the workability is excellent, and a large-scale apparatus is not required.
In addition, in the semiconductor device including the insulating film, even if the semiconductor wafer is made of a thin film, occurrence of "warpage" can be suppressed in a high-temperature environment. Therefore, the semiconductor device can be mounted on the substrate by reflow soldering at one time together with other components in response to the demand for miniaturization and high integration of the semiconductor device, and can be manufactured with excellent work efficiency.
Therefore, the composition for forming an insulating film of the present invention can be suitably used for forming an insulating film in a semiconductor device (for example, a power transistor such as a silicon transistor or GnN transistor, a transistor such as an organic transistor, or the like).
Detailed Description
[ polyorganosilsesquioxane ]
The polyorganosilsesquioxane of the present invention contains siloxane structural units in which,
the total of the structural unit represented by the following formula (I) and the structural unit represented by the following formula (II) is 55 mol% or more of the total amount of the siloxane structural units,
[RaSiO3/2] (I)
[ in the formula (I), RaRepresents an epoxy group-containing group, a substituted or unsubstituted aryl group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, or a hydrogen atom]，
[RaSiO2/2(ORb)] (II)
[ in the formula (II), RaThe same as above. RbRepresents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms]，
The number average molecular weight of the polyorganosilsesquioxane is 500 to 10000, and the epoxy equivalent is 200 to 2000 g/eq.
The structural unit represented by the above formula (I) (sometimes referred to as "T3 form") is described in more detail and is represented by the following formula (I'). The structural unit represented by the above formula (II) (which may be referred to as "T2 form") is represented in more detail by the following formula (II'). The 3 oxygen atoms bonded to silicon atoms shown in the structure represented by the following formula (I ') are bonded to other silicon atoms (silicon atoms not shown in the formula (I'), respectively). In addition, 2 oxygen atoms located above and below the silicon atom shown in the structure represented by the following formula (II ') are also bonded to other silicon atoms (silicon atoms not shown in the formula (II'), respectively). That is, the T3-form and the T2-form are both structural units (T units) formed by hydrolysis and condensation reactions of the corresponding hydrolyzable trifunctional silane compounds.
[ chemical formula 2]
As R in the above formulaaExamples of the epoxy group-containing group in (4) include groups represented by the following formulae (1a) to (1 d).
[ chemical formula 3]
In the above formula, R1a、R1b、R1c、R1dThe same or different alkylene groups each represent a linear or branched alkylene group, and examples thereof include: a linear or branched alkylene group having 1 to 10 carbon atoms such as a methylene group, a methylmethylene group, a dimethylmethylene group, an ethylene group, a propylene group, a trimethylene group, a tetramethylene group, a pentamethylene group, a hexamethylene group, or a decamethylene group.
Among the epoxy group-containing groups, those represented by the above formula (1a) or (1d) are preferable from the viewpoint of obtaining a cured product having high heat resistance and low curing shrinkage.
R in the above formulabIs a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. Thus, (OR) in the above formulab) The group is a hydroxyl group or an alkoxy group having 1 to 4 carbon atoms. Examples of the alkoxy group having 1 to 4 carbon atoms include methoxy group and ethoxy groupAlkyl, propoxy, isopropoxy, butoxy, isobutoxy, and the like.
Examples of the aryl group in the above-mentioned substituted or unsubstituted aryl group include: phenyl, tolyl, naphthyl, and the like.
Examples of the aralkyl group in the above-mentioned substituted or unsubstituted aralkyl group include: benzyl, phenethyl, and the like.
Examples of the cycloalkyl group in the above-mentioned substituted or unsubstituted cycloalkyl groups include: cyclobutyl, cyclopentyl, cyclohexyl, and the like.
Examples of the alkyl group in the above-mentioned substituted or unsubstituted alkyl group include: a straight-chain or branched alkyl group such as a methyl group, an ethyl group, a propyl group, a n-butyl group, an isopropyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, and an isopentyl group.
Examples of the alkenyl group in the above-mentioned substituted or unsubstituted alkenyl group include: a linear or branched alkenyl group such as a vinyl group, an allyl group, or an isopropenyl group.
Examples of the substituted aryl group, substituted aralkyl group, substituted cycloalkyl group, substituted alkyl group and substituted alkenyl group include: the aryl group, aralkyl group, cycloalkyl group, alkyl group, or alkenyl group may be a group in which a part or all of hydrogen atoms or a main chain skeleton is substituted with at least 1 kind selected from an ether group, an ester group, a carbonyl group, a siloxane group, a halogen atom (e.g., a fluorine atom), an acryloyl group, a methacryloyl group, a mercapto group, an amino group, and a hydroxyl group.
The siloxane structural unit constituting the polyorganosilsesquioxane may have a structure selected from the group consisting of the structural unit represented by the formula (I) and the structural unit represented by the formula (II) (T unit)a 3SiO1/2]Structural units shown (so-called M units), [ R ]a 2SiO]Structural unit (so-called D unit) shown, and [ SiO ]2]At least 1 siloxane structural unit among the structural units (so-called Q units) represented, but T units with respect to the total amount of siloxane structural units in the polyorganosilsesquioxane [ all siloxane structural units; total number of M units, D units, T units, and Q units](100 mol%) is 55 mol% or more, for example, 55 to 100 mol%, preferably 60 to 100 mol%The percentage is more preferably 65 to 100 mol%, particularly preferably 70 to 100 mol%, and most preferably 80 to 100 mol%. By setting the above ratio to 55 mol% or more, a cured product having high heat resistance and low curing shrinkage can be obtained. R in the above formulaaThe same as above.
The polyorganosilsesquioxane measured by GPC has a number average molecular weight (Mn) in terms of standard polystyrene of 500 to 10000, preferably 700 to 5000, more preferably 800 to 3000, still more preferably 900 to 2800, still more preferably 1000 to 2600, and particularly preferably 1100 to 2000. By setting the number average molecular weight to 500 or more, the heat resistance of the resulting cured product can be further improved. On the other hand, when the number average molecular weight is 10000 or less, the compatibility with other components contained in the composition for forming an insulating film becomes good.
The molecular weight dispersity (Mw/Mn) of the polyorganosilsesquioxane measured by GPC in terms of standard polystyrene is, for example, 1.0 to 3.0, preferably 1.1 to 2.0, more preferably 1.2 to 1.9, and particularly preferably 1.45 to 1.80. When the molecular weight dispersion is 3.0 or less, the high heat resistance and the low curing shrinkage tend to be further improved. On the other hand, when the molecular weight dispersion is 1.0 or more, the fluidity is improved, and the insulating film can be easily formed by the SOD method.
The number average molecular weight and the molecular weight dispersion degree of the polyorganosilsesquioxane can be measured by the apparatus and conditions described in the examples.
The epoxy equivalent of the polyorganosilsesquioxane is 200 to 2000g/eq, preferably 200 to 1800g/eq, more preferably 200 to 1500g/eq, particularly preferably 200 to 1200g/eq, and most preferably 205 to 1000 g/eq. By setting the epoxy equivalent to 2000g/eq or less, a cured product having high heat resistance can be obtained. Further, when the epoxy equivalent is 200g/eq or more, low curing shrinkage and appropriate fluidity can be obtained, and it is suitable for forming an insulating film by the SOD method.
The polyorganosilsesquioxane includes a complete cage polyorganosilsesquioxane, an incomplete cage polyorganosilsesquioxane, a ladder polyorganosilsesquioxane, a random polyorganosilsesquioxane, and the like, but in the present invention, among them, a complete cage polyorganosilsesquioxane and/or an incomplete cage polyorganosilsesquioxane is preferably used, and a incomplete cage polyorganosilsesquioxane is particularly preferably used.
When the incomplete cage polyorganosilsesquioxane is used, a coating film having an excellent balance among a linear thermal expansion coefficient, hardness, and curing shrinkage tends to be obtained. On the other hand, when a ladder-type polyorganosilsesquioxane is used, the coating film tends to be too soft and the coefficient of linear thermal expansion tends to increase. In addition, when a complete cage-type polyorganosilsesquioxane is used, the coating film tends to be too hard, the resistance to thermal shock such as cracking is reduced, and the reliability tends to be reduced.
Accordingly, the molar ratio [ T3 mer/T2 mer ] of the structural unit constituting the polyorganosilsesquioxane between the T3 mer (structural unit represented by formula (I)) and the T2 mer (structural unit represented by formula (II)) is, for example, 1 or more, preferably 3 or more, more preferably 5 or more, particularly preferably 6 or more, and most preferably 7 or more. The upper limit of the above molar ratio is, for example, 20, preferably 18, particularly preferably 16, and most preferably 14. The polyorganosilsesquioxane having a complete cage-type polyorganosilsesquioxane structure is composed of only T3 units, and no T2 unit is present in the molecule. The molar ratio [ T3 body/T2 body ] of the polyorganosilsesquioxane having a ladder-type polyorganosilsesquioxane structure is about 0.5 to 3.
The above ratio [ T3 body/T2 body ] in the polyorganosilsesquioxane]For example by29And Si-NMR spectrum was measured. In that29In the Si-NMR spectrum, the silicon atom in the structural unit represented by the above formula (I) (T3 mer) and the silicon atom in the structural unit represented by the above formula (II) (T2 mer) show signals (peaks) at different positions (chemical shifts), and therefore the ratio [ T3 mer/T2 mer ] can be obtained by calculating the integral ratio of each peak]。
Of polyorganosilsesquioxanes29The Si-NMR spectrum can be measured, for example, by the following apparatus and conditions.
A measuring device: trade name "JNM-ECA 500 NMR" (manufactured by Nippon electronics Co., Ltd.)
Solvent: deuterated chloroform
Cumulative number of times: 1800 times
Measuring temperature: 25 deg.C
The structure of the polyorganosilsesquioxane can be confirmed by FT-IR spectroscopy. For example, polyorganosilsesquioxanes which are completely cage-type or incompletely cage-type are present at 1050cm-1Near and 1150cm-1Near the absorption peak, respectively, and at 1100cm-1Nearby has a characteristic absorption peak [ reference: R.H.Raney, M.Itoh, A.Sakakibara and T.Suzuki, chem.Rev.95,1409(1995)]. In contrast, ladder polyorganosilsesquioxanes are at 1050cm-1Near and 1150cm-1The vicinities thereof respectively have characteristic absorption peaks.
The FT-IR spectrum of the polyorganosilsesquioxane can be measured, for example, by the following apparatus and conditions.
A measuring device: trade name "FT-720" ((manufactured by horiba, Ltd.)
The determination method comprises the following steps: transmission method
Resolution power: 4cm-1
And (3) determining a wave number region: 400-4000 cm-1
Cumulative number of times: 16 times (twice)
The polyorganosilsesquioxane of the present invention can be produced by a method of hydrolyzing and condensing a hydrolyzable silane compound. More specifically, the polyorganosilsesquioxane can be produced by a method comprising hydrolyzing and condensing a hydrolyzable silane compound represented by the following formula (a),
RaSi(X1)3 (a)。
r in the formulaaThe same as above. X in the above formula1Identical or different, represent an alkoxy group or a halogen atom. The alkoxy group may be, for example, a group represented by the formula (OR)b) The same applies to alkoxy groups having 1 to 4 carbon atoms in the group. Examples of the halogen atom include: fluorine atom, chlorine atom, bromine atom, iodine atom, etc. As X1Among them, alkoxy groups are preferable, and methoxy and ethoxy groups are more preferable.
The hydrolyzable silane compound represented by the above formula (a) is a compound which forms the structural unit represented by the formula (I) and the structural unit represented by the formula (II) in the polyorganosilsesquioxane of the present invention.
As the hydrolyzable silane compound, a hydrolyzable silane compound other than the hydrolyzable silane compound represented by the formula (a) may be used in combination. Examples thereof include hydrolyzable trifunctional silane compounds other than the hydrolyzable silane compounds represented by the above formula (a), hydrolyzable monofunctional silane compounds forming an M unit, hydrolyzable difunctional silane compounds forming a D unit, and hydrolyzable tetrafunctional silane compounds forming a Q unit.
The amount and composition of the hydrolyzable silane compound may be appropriately adjusted according to the structure of the desired polyorganosilsesquioxane. For example, the amount of the hydrolyzable silane compound represented by the formula (a) is not particularly limited, but is preferably 10 to 99 mol%, more preferably 15 to 97 mol%, further preferably 20 to 95 mol%, particularly preferably 25 to 90 mol%, and most preferably 35 to 85 mol%, based on the total amount (100 mol%) of the hydrolyzable silane compounds used. Polyorganosilsesquioxane obtained by using the hydrolyzable silane compound represented by the formula (a) in the above range can form a cured product having high heat resistance and low curing shrinkage by curing.
The amount of the hydrolyzable silane compound represented by the formula (a) is not particularly limited, but is, for example, 50 mol% or more, more preferably 60 to 100 mol%, particularly preferably 70 to 100 mol%, and most preferably 80 to 100 mol% based on the total amount (100 mol%) of the hydrolyzable silane compounds used.
The hydrolysis and condensation reaction of the hydrolyzable silane compound may be carried out in the presence of a solvent or in the absence of a solvent. Among them, it is preferable to carry out in the presence of a solvent. Examples of the solvent include: aromatic hydrocarbons such as benzene, toluene, xylene, and ethylbenzene; ethers such as diethyl ether, dimethoxyethane, tetrahydrofuran, and dioxane; ketones such as acetone, methyl ethyl ketone, and methyl isobutyl ketone; esters such as methyl acetate, ethyl acetate, isopropyl acetate, butyl acetate, and the like; amides such as N, N-dimethylformamide and N, N-dimethylacetamide; nitriles such as acetonitrile, propionitrile, and benzonitrile; alcohols such as methanol, ethanol, isopropanol, and butanol. Among the above solvents, ketones and ethers are preferable. The solvent may be used alone in 1 kind, or may be used in combination in 2 or more kinds.
The amount of the solvent used is not particularly limited, and may be appropriately adjusted within a range of 0 to 20 parts by weight based on 1 part by weight of the total amount of the hydrolyzable silane compound, depending on the desired reaction time and the like.
The hydrolysis and condensation reaction of the hydrolyzable silane compound is preferably carried out in the presence of a catalyst and water. The catalyst may be an acid catalyst or a base catalyst. Examples of the acid catalyst include: inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, boric acid, and the like; a phosphate ester; carboxylic acids such as acetic acid, formic acid, and trifluoroacetic acid; sulfonic acids such as methanesulfonic acid, trifluoromethanesulfonic acid, and p-toluenesulfonic acid; solid acids such as activated clay; lewis acids such as ferric chloride. Examples of the base catalyst include: hydroxides of alkali metals such as lithium hydroxide, sodium hydroxide, potassium hydroxide, and cesium hydroxide; hydroxides of alkaline earth metals such as magnesium hydroxide, calcium hydroxide, and barium hydroxide; carbonates of alkali metals such as lithium carbonate, sodium carbonate, potassium carbonate, and cesium carbonate; carbonates of alkaline earth metals such as magnesium carbonate; alkali metal hydrogen carbonates such as lithium hydrogen carbonate, sodium hydrogen carbonate, potassium hydrogen carbonate, and cesium hydrogen carbonate; organic acid salts (for example, acetate salts) of alkali metals such as lithium acetate, sodium acetate, potassium acetate, and cesium acetate; organic acid salts (e.g., acetate salts) of alkaline earth metals such as magnesium acetate; alkali metal alkoxides such as lithium methoxide, sodium ethoxide, sodium isopropoxide, potassium ethoxide, and potassium tert-butoxide; alkali metal phenates such as sodium phenate; amines (e.g., tertiary amines) such as triethylamine, N-methylpiperidine, 1, 8-diazabicyclo [5.4.0] undec-7-ene and 1, 5-diazabicyclo [4.3.0] non-5-ene; and nitrogen-containing aromatic heterocyclic compounds such as pyridine, 2' -bipyridine and 1, 10-phenanthroline. The catalyst may be used alone in 1 kind, or may be used in combination in 2 or more kinds. The catalyst may be used in a state of being dissolved or dispersed in water, a solvent, or the like.
The amount of the catalyst to be used is not particularly limited, and may be appropriately adjusted within a range of 0.002 to 0.200 mol based on 1 mol of the total amount of the hydrolyzable silane compound.
The amount of water used in the hydrolysis and condensation reaction is not particularly limited, and may be appropriately adjusted within a range of 0.5 to 20 mol based on 1 mol of the total amount of the hydrolyzable silane compound.
The method of adding water is not particularly limited, and the whole amount of water to be used (the whole amount of water) may be added at once or may be added stepwise. When the addition is carried out stepwise, the addition may be carried out continuously or intermittently.
The reaction conditions for carrying out the hydrolysis and condensation reaction of the hydrolyzable silane compound are preferably appropriately adjusted depending on the structure of the target polyorganosilsesquioxane, and for example, in the case of producing a polyorganosilsesquioxane in which the ratio [ T3 body/T2 body ] is 5 or more, the reaction temperature of the hydrolysis and condensation reaction is preferably 40 to 100 ℃, and more preferably 45 to 80 ℃. The reaction time of the hydrolysis and condensation reaction is preferably 0.1 to 10 hours, and more preferably 1.5 to 8 hours. The hydrolysis and condensation reaction may be carried out under normal pressure, or under increased pressure or reduced pressure. The gas atmosphere in the hydrolysis and condensation reaction is not particularly limited, and may be any of an inert gas atmosphere such as a nitrogen atmosphere, an argon atmosphere, and the like, and an atmosphere in the presence of oxygen in the air, and the like.
The polyorganosilsesquioxane of the present invention can be obtained by hydrolysis and condensation of the above hydrolyzable silane compound. After the hydrolysis and condensation reactions are terminated, the catalyst is preferably neutralized in order to suppress the ring opening of the epoxy group. The obtained polyorganosilsesquioxane can be separated and purified by a separation method such as water washing, acid washing, alkali washing, filtration, concentration, distillation, extraction, crystallization, recrystallization, or column chromatography, or a separation method combining these methods.
[ composition for Forming insulating film ]
The insulating film-forming composition of the present invention contains at least the polyorganosilsesquioxane as a polymerizable compound. The polyorganosilsesquioxane may contain 1 type of the polyorganosilsesquioxane alone, or2 or more types of the polyorganosilsesquioxane in combination.
The insulating film forming composition of the present invention may contain another polymerizable compound as a polymerizable compound (particularly, a cationic polymerizable compound) in addition to the polyorganosilsesquioxane. The other polymerizable compound may be any compound as long as it is a group having polymerizability (or a group having reactivity) with the epoxy group-containing group contained in the polyorganosilsesquioxane, and examples thereof include compounds having at least 1 polymerizable group selected from the group consisting of an epoxy group, an oxetanyl group, an acid anhydride group and a phenolic hydroxyl group (excluding compounds having a siloxane structural unit). These may be used alone in 1 kind, or may be used in combination of 2 or more kinds.
Examples of the compound having at least 1 polymerizable group selected from an epoxy group, an oxetane group, a vinyl ether group, an acid anhydride group and a phenolic hydroxyl group (excluding a compound containing a siloxane structural unit) include: epoxy compounds, oxetane compounds, vinyl ether compounds, acid anhydrides, phenolic hydroxyl group-containing compounds, and the like.
< epoxy Compound >
The epoxy compound includes an alicyclic epoxy compound, an aromatic epoxy compound, and an aliphatic epoxy compound.
The epoxy equivalent of the epoxy compound is, for example, 100 to 2000 g/eq. The upper limit is preferably 1500g/eq, particularly preferably 1000g/eq and most preferably 500 g/eq. The lower limit is preferably 150g/eq, particularly preferably 180g/eq, and most preferably 200 g/eq. By using a compound having an epoxy equivalent in the above range, a cured product having high heat resistance and low curing shrinkage can be formed. When the epoxy compound having an epoxy equivalent exceeding the above range is used, the toughness (flexibility) of the resulting cured product tends to be improved, but the compatibility, coatability and heat resistance tend to be lowered.
(alicyclic epoxy Compound)
The alicyclic epoxy compound is not particularly limited, and examples thereof include the following compounds, and the like.
(1) Compounds having in the molecule an epoxy group consisting of 2 adjacent carbon atoms and oxygen atoms constituting an alicyclic ring (in the present specification, sometimes referred to as "alicyclic epoxy group". AlcycHc epoxy group contains, for example, epoxycyclohexyl group, etc.)
(2) Compounds having an alicyclic ring directly singly bonded to an epoxy group
(3) Compound having alicyclic ring and glycidyl ether group in molecule (glycidyl ether type epoxy compound)
Examples of the compound having an alicyclic epoxy group in the molecule (1) include compounds represented by the following formula (i).
[ chemical formula 4]
In the above formula (i), Y represents a single bond or a linking group (a divalent group having 1 or more atoms). Examples of the linking group include: a divalent hydrocarbon group, an alkenylene group in which a part or all of the carbon-carbon double bonds have been epoxidized, a carbonyl group, an ether bond, an ester bond, a carbonate group, an amide group, a group in which a plurality of these groups are linked, and the like. The epoxycyclohexyl group in the formula (i) may have a substituent (e.g., C)1-3Alkyl groups, etc.).
Examples of the divalent hydrocarbon group include a linear or branched alkylene group having 1 to 18 carbon atoms, a divalent alicyclic hydrocarbon group having 3 to 18 carbon atoms, and the like. Examples of the linear or branched alkylene group having 1 to 18 carbon atoms include: methylene, methyl methylene, dimethyl methylene, ethylene, propylene, trimethylene and the like. Examples of the divalent alicyclic hydrocarbon group having 3 to 18 carbon atoms include: cycloalkylene (including cycloalkylidene) groups such as 1, 2-cyclopentylene, 1, 3-cyclopentylene, cyclopentylidene, 1, 2-cyclohexylene, 1, 3-cyclohexylene, 1, 4-cyclohexylene and cyclohexylidene.
Examples of the alkenylene group in the alkenylene group obtained by epoxidizing part or all of the carbon-carbon double bonds (which may be referred to as "epoxidized alkenylene group") include: and a linear or branched alkenylene group having 2 to 8 carbon atoms such as a vinylene group, a propenylene group, a 1-butenylene group, a 2-butenylene group, a butadienylene group, a pentenylene group, a hexenylene group, a heptenylene group, or an octenylene group. In particular, the epoxidized alkenylene group is preferably an alkenylene group in which all of the carbon-carbon double bonds are epoxidized, and more preferably an alkenylene group having 2 to 4 carbon atoms in which all of the carbon-carbon double bonds are epoxidized.
Representative examples of the alicyclic epoxy compound represented by the formula (i) include: (3,4,3 ', 4' -diepoxy) bicyclohexane, bis (3, 4-epoxycyclohexylmethyl) ether, 1, 2-epoxy-1, 2-bis (3, 4-epoxycyclohexan-1-yl) ethane, 2-bis (3, 4-epoxycyclohexan-1-yl) propane, 1, 2-bis (3, 4-epoxycyclohexan-1-yl) ethane, compounds represented by the following formulae (i-1) to (i-10), and the like. R' in the formula (i-5) is an alkylene group having 1 to 8 carbon atoms, and among them, a linear or branched alkylene group having 1 to 3 carbon atoms such as a methylene group, an ethylene group, a propylene group, or an isopropylene group is preferable. In addition, n in the following formulae (i-5), (i-7), (i-9) and (i-10)1～n8The same or different, represent an integer of 1 to 30.
[ chemical formula 5]
[ chemical formula 6]
Examples of the compound in which an epoxy group is directly and singly bonded to the alicyclic ring (2) include compounds represented by the following formula (ii).
[ chemical formula 7]
In the formula (ii), R' is a group (p-valent organic group) obtained by removing p hydroxyl groups (-OH) from the structural formula of p-polyol, and p and n respectively represent natural numbers. As p-polyol [ R "(OH)p]Examples thereof include polyhydric alcohols (e.g., alcohols having 1 to 15 carbon atoms) such as 2, 2-bis (hydroxymethyl) -1-butanol. p is preferably 1 to 6, and n is preferably 1 to 30. When p is 2 or more, each of the values]The groups in the interior (in the brackets on the outside) may have the same or different n. Specific examples of the compound represented by the formula (ii) include 1, 2-epoxy-4- (2-oxiranyl) cyclohexane adduct of 2, 2-bis (hydroxymethyl) -1-butanol [ for example, the trade name "EHPE 3150" ((manufactured by laugaku corporation) ], and the like]And the like.
Examples of the compound having an alicyclic group and a glycidyl ether group in the molecule (3) include glycidyl ethers of alicyclic alcohols (particularly alicyclic polyols). More specifically, examples thereof include: compounds obtained by hydrogenating bisphenol a type epoxy compounds (hydrogenated bisphenol a type epoxy compounds) such as 2, 2-bis [4- (2, 3-epoxypropoxy) cyclohexyl ] propane and 2, 2-bis [3, 5-dimethyl-4- (2, 3-epoxypropoxy) cyclohexyl ] propane; compounds obtained by hydrogenating bisphenol F type epoxy compounds such as bis [ o, o- (2, 3-epoxypropoxy) cyclohexyl ] methane, bis [ o, p- (2, 3-epoxypropoxy) cyclohexyl ] methane, bis [ p, p- (2, 3-epoxypropoxy) cyclohexyl ] methane, bis [3, 5-dimethyl-4- (2, 3-epoxypropoxy) cyclohexyl ] methane and the like (hydrogenated bisphenol F type epoxy compounds); a hydrogenated bisphenol type epoxy compound; hydrogenated phenol novolac-type epoxy compounds; hydrogenated cresol novolak type epoxy compounds; hydrogenated cresol novolak type epoxy compounds of bisphenol a; hydrogenated naphthalene type epoxy compounds; a compound obtained by hydrogenating an epoxy compound obtained from trisphenol methane; and compounds obtained by hydrogenating the aromatic epoxy compounds described below.
Examples of the aromatic epoxy compound include: an epibis (Epi-Bis) type glycidyl ether type epoxy resin obtained by a condensation reaction of a bisphenol [ e.g., bisphenol a, bisphenol F, bisphenol S, fluorene bisphenol, etc. ] with an epihalohydrin; a high-molecular-weight epibis-glycidyl ether epoxy resin obtained by further addition reaction of the epibis-glycidyl ether epoxy resin with the bisphenol; a novolak/alkyl glycidyl ether type epoxy resin obtained by further subjecting a polyhydric alcohol obtained by condensation reaction of a phenol [ e.g., phenol, cresol, xylenol, resorcinol, catechol, bisphenol a, bisphenol F, bisphenol S, etc. ] and an aldehyde [ e.g., formaldehyde, acetaldehyde, benzaldehyde, hydroxybenzaldehyde, salicylaldehyde, etc. ] to condensation reaction with an epihalohydrin; and epoxy compounds in which 2 phenol skeletons are bonded to the 9-position of the fluorene ring, and glycidyl groups are bonded to oxygen atoms of the phenol skeletons, respectively, directly or via an alkyleneoxy group, after hydrogen atoms are removed from hydroxyl groups of the phenol skeletons.
(aliphatic epoxy Compound)
Examples of the aliphatic epoxy compound include: glycidyl ethers of q-polyols (q is a natural number) having no cyclic structure; glycidyl esters of mono-or polycarboxylic acids [ e.g., acetic acid, propionic acid, butyric acid, stearic acid, adipic acid, sebacic acid, maleic acid, itaconic acid, etc. ]; epoxides of double-bond-containing oils such as epoxidized linseed oil, epoxidized soybean oil, and epoxidized castor oil; and epoxides of polyolefins (including polyalkenes), such as epoxidized polybutadiene. The q-polyol having no cyclic structure includes, for example: monohydric alcohols such as methanol, ethanol, 1-propanol, isopropanol, and 1-butanol; glycols such as ethylene glycol, 1, 2-propylene glycol, 1, 3-propylene glycol, 1, 4-butylene glycol, neopentyl glycol, 1, 6-hexanediol, diethylene glycol, triethylene glycol, tetraethylene glycol, dipropylene glycol, polyethylene glycol, and polypropylene glycol; and trihydric or higher polyhydric alcohols such as glycerin, diglycerin, erythritol, trimethylolethane, trimethylolpropane, pentaerythritol, dipentaerythritol, and sorbitol. The q-polyol may be polyether polyol, polyester polyol, polycarbonate polyol, polyolefin polyol, or the like.
< oxetane Compound >
The oxetane compound includes known or conventional compounds having 1 or more oxetane rings in the molecule, and is not particularly limited, and examples thereof include: 3, 3-bis (ethyleneoxymethyl) oxetane, 3-ethyl-3- (hydroxymethyl) oxetane, 3-ethyl-3- (2-ethylhexyloxymethyl) oxetane, 3-ethyl-3- [ (phenoxy) methyl ] oxetane, 3-ethyl-3- (hexyloxymethyl) oxetane, 3-ethyl-3- (chloromethyl) oxetane, 3-bis (chloromethyl) oxetane, 1, 4-bis [ (3-ethyl-3-oxetanylmethoxy) methyl ] benzene, bis { [ 1-ethyl (3-oxetanyl) ] methyl } ether, 4' -bis [ (3-ethyl-3-oxetanyl) methoxymethyl ] bicyclohexane, 1, 4-bis [ (3-ethyl-3-oxetanyl) methoxymethyl ] cyclohexane, 1, 4-bis { [ (3-ethyl-3-oxetanyl) methoxy ] methyl } benzene, 3-ethyl-3- { [ (3-ethyloxetan-3-yl) methoxy ] methyl) } oxetane, xylylene dioxirane, 3-ethyl-3- { [3- (triethoxysilyl) propoxy ] methyl } oxetane, oxetanylsilsesquioxane, phenol novolac oxetane and the like.
The oxetane equivalent of the oxetane compound is, for example, 100 to 500g/eq, preferably 100 to 400g/eq, and particularly preferably 105 to 300 g/eq. By using a compound having an oxetane equivalent in the above range, a cured product having high heat resistance and low curing shrinkage can be formed.
< vinyl ether Compound >
The vinyl ether compound is not particularly limited, and may be a known or conventional compound having 1 or more vinyl ether groups in the molecule, and examples thereof include: 2-hydroxyethyl vinyl ether (ethylene glycol monovinyl ether), 3-hydroxypropyl vinyl ether, 2-hydroxyisopropyl vinyl ether, 4-hydroxybutyl vinyl ether, 3-hydroxybutyl vinyl ether, 2-hydroxybutyl vinyl ether, 3-hydroxyisobutyl vinyl ether, 2-hydroxyisobutyl vinyl ether, 1-methyl-3-hydroxypropyl vinyl ether, 1-methyl-2-hydroxypropyl vinyl ether, 1-hydroxymethylpropyl vinyl ether, 4-hydroxycyclohexyl vinyl ether, 1, 6-hexanediol monovinyl ether, 1, 6-hexanediol divinyl ether, 1, 8-octanediol divinyl ether, 1, 4-cyclohexanedimethanol monovinyl ether, ethylene glycol monovinyl ether, propylene glycol monovinyl ether, ethylene glycol monovinyl ether, propylene glycol monovinyl, 1, 4-cyclohexanedimethanol divinyl ether, 1, 3-cyclohexanedimethanol monovinyl ether, 1, 3-cyclohexanedimethanol divinyl ether, 1, 2-cyclohexanedimethanol monovinyl ether, 1, 2-cyclohexanedimethanol divinyl ether, p-xylylene glycol monovinyl ether, p-xylylene glycol divinyl ether, m-xylylene glycol monovinyl ether, m-xylylene glycol divinyl ether, o-xylylene glycol monovinyl ether, o-xylylene glycol divinyl ether, ethylene glycol divinyl ether, diethylene glycol monovinyl ether, diethylene glycol divinyl ether, triethylene glycol monovinyl ether, triethylene glycol divinyl ether, tetraethylene glycol divinyl ether, pentaethylene glycol monovinyl ether, pentaethylene glycol divinyl ether, oligoethylene glycol monovinyl ether, and mixtures thereof, Oligo-ethylene glycol divinyl ether, polyethylene glycol monovinyl ether, polyethylene glycol divinyl ether, dipropylene glycol monovinyl ether, dipropylene glycol divinyl ether, tripropylene glycol monovinyl ether, tripropylene glycol divinyl ether, tetrapropylene glycol monovinyl ether, tetrapropylene glycol divinyl ether, pentapropyleneglycol monovinyl ether, pentapropyleneglycol divinyl ether, oligo-propyleneglycol monovinyl ether, oligo-propyleneglycol divinyl ether, polypropylene glycol monovinyl ether, polypropylene glycol divinyl ether, isosorbide divinyl ether, oxanorbornene divinyl ether, phenyl vinyl ether, n-butyl vinyl ether, isobutyl vinyl ether, octyl vinyl ether, cyclohexyl vinyl ether, hydroquinone divinyl ether, 1, 4-butanediol divinyl ether, cyclohexanedimethanol divinyl ether, trimethylolpropane divinyl ether, dipropylene glycol monovinyl ether, dipropylene glycol divinyl ether, propylene glycol divinyl ether, Trimethylolpropane trivinyl ether, bisphenol A divinyl ether, bisphenol F divinyl ether, hydroxyoxanorbornane methanol divinyl ether, 1, 4-cyclohexanediol divinyl ether, pentaerythritol trivinyl ether, pentaerythritol tetravinyl ether, dipentaerythritol pentavinyl ether, dipentaerythritol hexavinyl ether, and the like.
The vinyl ether compound has a vinyl ether group equivalent of, for example, 60 to 500g/eq, preferably 80 to 300g/eq, and particularly preferably 90 to 200 g/eq. By using a compound having a vinyl ether group equivalent in the above range, a cured product having high heat resistance and low curing shrinkage can be formed.
< anhydride >
Examples of the acid anhydride include: methyltetrahydrophthalic anhydride (4-methyltetrahydrophthalic anhydride, 3-methyltetrahydrophthalic anhydride, etc.), methylhexahydrophthalic anhydride (4-methylhexahydrophthalic anhydride, 3-methylhexahydrophthalic anhydride, etc.), dodecenylsuccinic anhydride, methylendomethyltetrahydrophthalic anhydride, phthalic anhydride, maleic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methylcyclohexene dicarboxylic anhydride, pyromellitic anhydride, trimellitic anhydride, benzophenone tetracarboxylic anhydride, nadic anhydride, methylnadic anhydride, hydrogenated methylnadic anhydride, 4- (4-methyl-3-pentenyl) tetrahydrophthalic anhydride, succinic anhydride, adipic anhydride, sebacic anhydride, dodecanedioic anhydride, methylcyclohexene tetracarboxylic anhydride, maleic anhydride, sebacic anhydride, dodecanedioic anhydride, and the like, Vinyl ether-maleic anhydride copolymers, alkylstyrene-maleic anhydride copolymers, and the like.
The equivalent weight of the acid anhydride group of the acid anhydride is, for example, 100 to 500g/eq, preferably 100 to 300g/eq, and particularly preferably 100 to 200 g/eq. By using the compound having the acid anhydride group equivalent in the above range, a cured product having high heat resistance and low curing shrinkage can be formed.
< Compound containing phenolic hydroxyl group >
Examples of the phenolic hydroxyl group-containing compound include: a resin obtained by polymerizing phenol or cresol with formaldehyde (specific examples thereof include a novolak-type phenol novolak resin, a novolak-type cresol novolak resin, a p-xylene-modified phenol novolak resin, a p-xylene-m-xylene-modified phenol novolak resin, and the like).
The phenolic hydroxyl group equivalent of the phenolic hydroxyl group-containing compound is, for example, 80 to 500g/eq, preferably 90 to 300g/eq, and particularly preferably 100 to 200 g/eq. By using a compound having a phenolic hydroxyl group equivalent in the above range, a cured product having high heat resistance and low curing shrinkage can be formed.
The composition for forming an insulating film of the present invention may contain, as a polymerizable compound, another polymerizable compound other than the polyorganosilsesquioxane, and the content of the other polymerizable compound (for example, the above-mentioned compound having at least 1 polymerizable group selected from the group consisting of an epoxy group, an oxetane group, an acid anhydride group and a phenolic hydroxyl group (excluding the compound containing a siloxane structural unit)) is, for example, 150 parts by weight or less (preferably 120 parts by weight or less, particularly preferably 110 parts by weight or less, and most preferably 100 parts by weight or less) based on 100 parts by weight of the polyorganosilsesquioxane, and the lower limit of the content of the other polymerizable compound is, for example, 10 parts by weight, particularly preferably 20 parts by weight, most preferably 30 parts by weight, and particularly preferably 40 parts by weight, the heat resistance of the resulting cured product tends to decrease and the cure shrinkage tends to increase.
The composition for forming an insulating film of the present invention preferably further contains 1 or2 or more kinds of cationic polymerization initiators. The cationic polymerization initiator is a compound that can initiate or accelerate the polymerization reaction of a polymerizable compound (specifically, a cationic polymerization compound) such as polyorganosilsesquioxane in the present invention.
The cationic polymerization initiator is not particularly limited, and examples thereof include: polymerization initiators such as a photo cation polymerization initiator (photo acid generator) and a thermal cation polymerization initiator (thermal acid generator). In the present invention, it is particularly preferable to contain a photo cationic polymerization initiator as the cationic polymerization initiator, from the viewpoint that the curing time until tack-free can be shortened.
As the photo cation polymerization initiator, known or customary photo cation polymerization initiators can be used, and examples thereof include: sulfonium salt (salt of sulfonium ion and anion), iodineSalt (iodine)
Examples of anions constituting the salt in the photo cation polymerization initiator include: SbF6 -、PF6 -、BF4 -、(CF3CF2)3PF3 -、(CF3CF2CF2)3PF3 -、(C6F5)4B-、(C6F5)4Ga-Sulfonic acid anion (trifluoromethanesulfonic acid anion, pentafluoroethanesulfonic acid anion, nonafluorobutanesulfonic acid anion, methanesulfonic acid anion, benzenesulfonic acid anion, p-toluenesulfonic acid anion, etc.), (CF)3SO2)3C-、(CF3SO2)2N-High halogen acid ion, halogenated sulfonic acid ion, sulfuric acid ion, carbonic acid ion, aluminic acid ion, hexafluorobismuthate ion, carboxylic acid ion, arylboronic acid ion, thiocyanic acid ion, nitric acid ion and the like.
Examples of the sulfonium salt include: triphenylsulfonium salt, tri-p-tolylsulfonium salt, tri-o-tolylsulfonium salt, tri (4-methoxyphenyl) sulfonium salt, 1-naphthyldiphenylsulfonium salt, 2-naphthyldiphenylsulfonium salt, tri (4-fluorophenyl) sulfonium salt, tri-1-naphthylsulfonium salt, tri-2-naphthylsulfonium salt, tri (4-hydroxyphenyl) sulfonium salt, diphenyl [4- (phenylthio) phenyl ] sulfonium salt]Triarylsulfonium salts such as sulfonium salts and 4- (p-tolylthio) phenyl-bis (p-phenyl) sulfonium salts; diarylsulfonium salts such as diphenylphenacylsulfonium salts, diphenyl 4-nitrobenzoylmethylsulfonium salts, diphenylbenzylsulfonium salts, and diphenylmethylsulfonium salts; monoarylsulfonium salts such as phenylmethylbenzylsulfonium salt, 4-hydroxyphenylmethylbenzylsulfonium salt, and 4-methoxyphenylmethylbenzylsulfonium salt; dimethyl benzoyl nailSulfonium salt, phenacyl tetrahydrothiophene
Examples of the above diphenyl [4- (phenylthio) phenyl ] sulfonium salt include: diphenyl [4- (phenylthio) phenyl ] sulfonium hexafluoroantimonate, diphenyl [4- (phenylthio) phenyl ] sulfonium hexafluorophosphate, and the like.
As the above iodine
Examples of the selenium salt include: triaryl selenium salts such as triphenyl selenium salt, tri-p-tolyl selenium salt, tri-o-tolyl selenium salt, tri (4-methoxyphenyl) selenium salt, and 1-naphthyl diphenyl selenium salt; diarylselenium salts such as diphenylphenacylselenium salt, diphenylbenzylselenium salt, diphenylmethylselenium salt, etc.; monoarylselenium salts such as phenylmethylbenzylselenium salts; trialkylselenium salts such as dimethylbenzylmethylselenate and the like.
Examples of the ammonium salt include: tetraalkylammonium salts such as tetramethylammonium salts, ethyltrimethylammonium salts, diethyldimethylammonium salts, triethylmethylammonium salts, tetraethylammonium salts, trimethyl-n-propylammonium salts, and trimethyl-n-butylammonium salts; n, N-dimethylpyrrolidineSalts, N-ethyl-N-methylpyrrolidine
As mentioned above
Examples of the salt of the transition metal complex ion include: (η)5-cyclopentadienyl) (η)6-toluene) Cr+、(η5-cyclopentadienyl) (η)6-xylene) Cr+Salts of isochromium complex cations; (η)5-cyclopentadienyl) (η)6-toluene) Fe+、(η5-cyclopentadienyl) (η)6-xylene) Fe+And salts of iron complex cations.
Examples of the thermal cationic polymerization initiator include: aryl sulfonium salt and aryl iodine
Examples of anions constituting the salt in the thermal cationic polymerization initiator include the same anions constituting the salt in the above-mentioned photo cationic polymerization initiator.
In the composition for forming an insulating film of the present invention, for example, those having trade names of "SP-66" and "SP-77" (manufactured by ADEKA, Inc.); commercially available products such as "SANEIDO SI-60L", "SANEIDO SI-80L", "SANEIDO SI-100L" and "SANEIDO SI-150L" (manufactured by SANEIDO CHEMICAL INDUSTRY, Inc.).
Examples of the aluminum chelate compound include: aluminum ethyl acetoacetate diisopropanoate, aluminum tris (ethyl acetoacetate), and the like.
Examples of the boron trifluoride amine complex include: boron trifluoride monoethylamine complex, boron trifluoride imidazole complex, boron trifluoride piperidine complex, and the like.
The content (blending amount) of the cationic polymerization initiator in the composition for forming an insulating film of the present invention is not particularly limited, and is, for example, 0.01 to 5.0 parts by weight, with the lower limit of 0.05 parts by weight, more preferably 0.1 parts by weight, and particularly preferably 0.5 parts by weight, based on 100 parts by weight of the polymerizable compound contained in the composition for forming an insulating film. By containing the cationic polymerization initiator in an amount of 0.01 part by weight or more, the curing reaction can be efficiently and sufficiently performed, and a cured product having heat resistance and low curing shrinkage can be obtained. Further, by setting the content of the cationic polymerization initiator to 5.0 parts by weight or less, the storage stability of the insulating film forming composition is improved.
The composition for forming an insulating film of the present invention may contain 1 or2 or more kinds of curing accelerators in addition to the cationic polymerization initiator, or may contain 1 or2 or more kinds of curing accelerators in place of the cationic polymerization initiator.
The curing accelerator is a compound having a function of accelerating a curing rate when the polymerizable compound of the composition for forming an insulating film of the present invention is cured, and examples thereof include: 1, 8-diazabicyclo [5.4.0]]Undecene-7 (DBU), and salts thereof (e.g., phenoxide, octoate, p-toluenesulfonate, formate, tetraphenylborate); 1, 5-diazabicyclo [4.3.0]]Nonene-5 (DBN), and salts thereof (e.g.,onium salt, sulfonium salt, quaternary ammonium salt, iodine
As the curing accelerator, for example: commercially available products such as "U-CAT SA 506", "U-CAT SA 102", "U-CAT 5003", "U-CAT 18X" (manufactured by SAN-APRO, Inc., mentioned above), "TPP-K", "TPP-MK" (manufactured by Beixing chemical industry, Inc., mentioned above), and "PX-4 ET" (manufactured by Japan chemical industry, Inc.).
The content of the curing accelerator is, for example, preferably about 0.01 to 5.0 parts by weight, more preferably 0.02 to 3.0 parts by weight, particularly preferably 0.05 to 3.0 parts by weight, and most preferably 0.1 to 2.0 parts by weight, based on 100 parts by weight of the polymerizable compound contained in the composition for forming an insulating film of the present invention.
The composition for forming an insulating film of the present invention may further contain the following conventional additives as optional components: an insulating material (e.g., silver nanowires, alumina nanofibers, cellulose (e.g., cellulose acetate)), a curing aid, a solvent (e.g., organic solvent such as PEGMEA), a stabilizer (e.g., antioxidant, ultraviolet absorber, light stabilizer, heat stabilizer, heavy metal deactivator), a flame retardant (e.g., phosphorus flame retardant, halogen flame retardant, inorganic flame retardant, etc.), a flame retardant aid, a reinforcing material (other filler), a nucleating agent, a coupling agent (e.g., silane coupling agent), a lubricant, wax, a plasticizer, a mold release agent, an impact modifier, a hue modifier, a transparentizing agent, a rheology modifier (e.g., fluidity modifier), a processability modifier, a colorant (e.g., dye, pigment, etc.), an antistatic agent, a dispersant, a surface modifier (e.g., leveling agent, wrinkle inhibitor, etc.), a surface modifier (e.g., slipping agent), a matting agent, Defoaming agents, foam inhibitors, defoaming agents, antibacterial agents, preservatives, viscosity modifiers, tackifiers, photosensitizers, foaming agents, and the like. These additives may be used alone in 1 kind, or in combination of 2 or more kinds.
The composition for forming an insulating film of the present invention is not particularly limited, and can be prepared by stirring and mixing the above-mentioned components at room temperature or, if necessary, while heating. The composition for forming an insulating film of the present invention may be used in the form of a one-component composition in which a mixture of respective components is mixed in advance and used as it is, or may be used in the form of a multi-component (for example, two-component) composition in which 2 or more components stored separately are mixed at a predetermined ratio before use and used.
In forming an insulating film by the SOD method, the composition for forming an insulating film of the present invention is preferably a liquid at room temperature (about 25 ℃), and has a viscosity of, for example, about 1 to 100 mPas, preferably 1 to 20 mPas, and particularly preferably 1 to 10 mPas. The viscosity of the composition for forming an insulating film of the present invention is measured using a viscometer (trade name "MCR 301", manufactured by anton paar corporation) at a swing angle of 5%, a frequency of 0.1 to 100(1/s), a temperature: measured at 25 ℃.
[ insulating film ]
The insulating film of the present invention is formed from a cured product of the insulating film-forming composition. The insulating film of the present invention can be formed by the following method: the insulating film-forming composition is applied to the surface of a wafer or the like, and when the composition contains a solvent, the coating is followed by removal of the solvent by heating or the like, and then irradiation with active energy rays and/or heat treatment are performed to cure the coating film.
As a method for applying the insulating film forming composition to the surface of a wafer or the like, for example: SOD methods (spin coating), roll coating, spray coating, brush coating, bar coating, roll coating, screen printing, and the like.
The thickness of the insulating film (the total thickness when 2 or more layers are provided) is, for example, 50 to 1000nm, preferably 50 to 300nm, and particularly preferably 50 to 250 nm.
As the active energy ray, for example: any active energy ray among infrared rays, visible light, ultraviolet rays, X rays, electron beams, α rays, β rays, γ rays, and the like. Among them, ultraviolet rays are preferable in terms of excellent handling properties.
The irradiation conditions of the active energy ray when curing the coating film may be appropriately adjusted depending on the type and energy of the active energy ray to be irradiated, the shape and size of the cured product, and the like, and are not particularly limited, but when irradiating ultraviolet rays, the irradiation conditions are preferably, for example, 1 to 1000mJ/cm2Left and right. For example, a high-pressure mercury lamp, an ultrahigh-pressure mercury lamp, a xenon lamp, a carbon arc, a metal halide lamp, sunlight, an LED lamp, a laser, or the like can be used for irradiation with the active energy ray. After the irradiation with the active energy ray, the curing reaction may be further progressed by further performing a heat treatment (annealing, aging).
The heat treatment conditions for curing the coating film are not particularly limited, and are, for example, preferably 30 to 200 ℃ and more preferably 50 to 190 ℃. The curing time is, for example, about 0.5 to 10 hours.
The insulating film of the present invention obtained by the above method has high heat resistance, and the 1% weight loss temperature is, for example, 260 ℃. In addition, the insulating film of the present invention has low curing shrinkage. Therefore, even if the semiconductor wafer is thinned, the occurrence of "warpage" can be suppressed in a high-temperature environment.
[ semiconductor device ]
The semiconductor device of the present invention is characterized by comprising at least 1 layer of the above-described insulating film (e.g., an interlayer insulating film). Examples of the semiconductor device include: power transistors such as silicon transistors and GnN transistors, and organic transistors. The electronic device of the present invention has the above-described insulating film, and therefore, can suppress occurrence of "warpage" even in a high-temperature environment. Therefore, the semiconductor device can be mounted on the substrate by reflow soldering at one time together with other components in response to the demand for miniaturization and high integration of the semiconductor device, and can be manufactured with excellent work efficiency.
- 上一篇：一种医用注射器针头装配设备
- 下一篇：热固化环氧树脂粘合剂