阅读说明：本技术 一种平板探测器 (Flat panel detector ) 是由 张勇 华刚 薛艳娜 林坚 包智颖 米磊 白璐 方浩博 王景棚 张丽敏 于 2018-06-29 设计创作，主要内容包括：本发明提供一种平板探测器,涉及平板探测器领域,用于解决非晶硅X射线平板探测器因外部静电影响,导致获取的图像电信号异常的问题。所述平板探测器,包括衬底、设置在所述衬底上的多个光电二极管以及设置在所述光电二极管远离所述衬底一侧且与所述光电二极管连接的信号线；还包括设置在所述光电二极管远离所述衬底一侧的透射导电层,所述透射导电层在所述衬底上的正投影与所述光电二极管在所述衬底上的正投影交叠。(The invention provides a flat panel detector, relates to the field of flat panel detectors, and is used for solving the problem that an acquired image electric signal is abnormal due to external static influence of an amorphous silicon X-ray flat panel detector. The flat panel detector comprises a substrate, a plurality of photodiodes arranged on the substrate and a signal wire which is arranged on one side of the photodiodes far away from the substrate and connected with the photodiodes; the photoelectric conversion device further comprises a transmission conducting layer arranged on one side of the photodiode far away from the substrate, and the orthographic projection of the transmission conducting layer on the substrate is overlapped with the orthographic projection of the photodiode on the substrate.)

1. A flat panel detector comprising a substrate, a plurality of photodiodes provided on the substrate, and a signal line provided on a side of the photodiodes remote from the substrate and connected to the photodiodes,

the photoelectric conversion device further comprises a transmission conducting layer arranged on one side of the photodiode far away from the substrate, and the orthographic projection of the transmission conducting layer on the substrate is overlapped with the orthographic projection of the photodiode on the substrate.

2. A flat panel detector as claimed in claim 1, wherein the orthographic projection of the transmissive conductive layer on the substrate covers the orthographic projection of the photodiode on the substrate.

3. The flat panel detector according to claim 1, wherein the signal line is disposed between the transmissive conductive layer and the photodiode.

4. The flat panel detector according to claim 3,

a passivation layer is arranged between the transmission conductive layer and the signal line;

alternatively, the first and second electrodes may be,

the transmissive conductive layer is disposed on a surface of the signal line.

5. The flat panel detector according to claim 1, wherein the transmissive conductive layer includes a plurality of conductive patterns disposed corresponding to the photodiodes; the plurality of conductive patterns are connected by a conductive connecting part.

6. The flat panel detector according to claim 5, wherein a thin film transistor connected to the photodiode and a gate scan line and a data line connected to the thin film transistor are further provided on the substrate;

the grid scanning lines and the data lines are crossed to form photosensitive areas which are arranged in an array mode, and the conductive patterns are located in the photosensitive areas.

7. The flat panel detector according to claim 6, wherein the thin film transistor includes a gate electrode, a source electrode, and a drain electrode;

the orthographic projection of the gate electrode on the substrate, the orthographic projection of the source electrode on the substrate and the orthographic projection of the drain electrode on the substrate are not overlapped with the orthographic projection of the conductive pattern on the substrate.

8. The flat panel detector according to claim 6, wherein an orthographic projection of the signal line on the substrate covers an orthographic projection of the active layer of the thin film transistor on the substrate.

9. The flat panel detector according to claim 1, wherein the transmissive conductive layer is made of a transparent conductive material.

10. The flat panel detector according to any of claims 1-9, wherein the substrate comprises a binding region;

the flat panel detector also comprises a conductive pattern arranged in the binding region, and the conductive pattern and the transmission conductive layer are made of the same layer and the same material.

Technical Field

The invention relates to the field of flat panel detectors, in particular to a flat panel detector.

Background

An amorphous silicon (a-Si) X-ray flat panel detector is an X-ray image detector taking an amorphous silicon photodiode array as a core, a scintillator or a fluorescent layer of the detector converts X-ray photons into visible light under the irradiation of X-rays, then the amorphous silicon array with the function of the photodiode is converted into an image electric signal, and the image electric signal is transmitted and subjected to analog-digital conversion through a peripheral circuit, so that a digital image is obtained. It is also commonly referred to as an indirect conversion type flat panel detector because it undergoes an imaging process of X-ray-visible light-charge image-digital image. The amorphous silicon X-ray flat panel detector has the advantages of high imaging speed, good space and density resolution, high signal-to-noise ratio, direct digital output and the like, thereby being widely applied to various digital X-ray imaging devices.

The amorphous silicon X-ray flat panel detector is not provided with a box substrate, and only one thin passivation layer is arranged on the uppermost layer of the photodiode to serve as a protection layer, so that the amorphous silicon X-ray flat panel detector is very easily influenced by external static electricity, the acquired image electric signals are abnormal, and the acquired image is abnormal.

Disclosure of Invention

The embodiment of the invention provides a flat panel detector, which is used for solving the problem that an acquired image electric signal is abnormal due to external static influence of an amorphous silicon X-ray flat panel detector.

In order to achieve the above purpose, the embodiment of the invention adopts the following technical scheme:

in a first aspect, a flat panel detector is provided, which includes a substrate, a plurality of photodiodes disposed on the substrate, and a signal line disposed on a side of the photodiodes away from the substrate and connected to the photodiodes; the photoelectric conversion device further comprises a transmission conducting layer arranged on one side of the photodiode far away from the substrate, and the orthographic projection of the transmission conducting layer on the substrate is overlapped with the orthographic projection of the photodiode on the substrate.

Optionally, an orthographic projection of the transmissive conductive layer on the substrate covers an orthographic projection of the photodiode on the substrate.

Optionally, the signal line is disposed between the transmissive conductive layer and the photodiode.

Optionally, a passivation layer is disposed between the transmissive conductive layer and the signal line;

optionally, the transmissive conductive layer is disposed on a surface of the signal line.

Optionally, the transmissive conductive layer includes a plurality of conductive patterns, and the conductive patterns are disposed corresponding to the photodiodes; the plurality of conductive patterns are connected by a conductive connecting part.

Optionally, a thin film transistor connected to the photodiode, and a gate scan line and a data line connected to the thin film transistor are further disposed on the substrate; the grid scanning lines and the data lines are crossed to form photosensitive areas which are arranged in an array mode, and the conductive patterns are located in the photosensitive areas.

Optionally, the thin film transistor includes a gate electrode, a source electrode, and a drain electrode; the orthographic projection of the gate electrode on the substrate, the orthographic projection of the source electrode on the substrate and the orthographic projection of the drain electrode on the substrate are not overlapped with the orthographic projection of the conductive pattern on the substrate.

Optionally, an orthographic projection of the signal line on the substrate covers an orthographic projection of an active layer of the thin film transistor on the substrate.

Optionally, the transmissive conductive layer is made of a transparent conductive material.

Optionally, the substrate includes a bonding region; the flat panel detector also comprises a conductive pattern arranged in the binding region, and the conductive pattern and the transmission conductive layer are made of the same layer and the same material.

In a second aspect, a method for manufacturing a flat panel detector is provided, including: forming a photodiode on a substrate; and forming a transmissive conductive layer and a signal line connected to the photodiode on a substrate on which the photodiode is formed, wherein an orthogonal projection of the transmissive conductive layer on the substrate overlaps an orthogonal projection of the photodiode on the substrate.

Optionally, the forming a transmissive conductive layer on the substrate on which the photodiode is formed and a signal line connected to the photodiode specifically includes: forming a signal line connected to the photodiode on the substrate on which the photodiode is formed; and forming the transmission conductive layer on the substrate on which the signal line is formed, wherein the orthographic projection of the transmission conductive layer on the substrate covers the orthographic projection of the photodiode on the substrate.

Optionally, the conductive pattern located in the bonding region is simultaneously formed when the transmissive conductive layer is formed.

The invention provides a flat panel detector, wherein a transmission conductive layer is arranged on one side of a photodiode, which is far away from a substrate, so that external static electricity can be isolated from the photodiode by the transmission conductive layer carrying voltage, and visible light can not be influenced to irradiate the photodiode, thereby relieving the influence of external static electricity on the photodiode, improving the anti-static capability of the flat panel detector and ensuring the yield of obtained pictures.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a flat panel detector according to an embodiment of the present invention;

FIG. 2 is a first cross-sectional view of a flat panel detector according to an embodiment of the present invention;

fig. 3 is a second cross-sectional view of a flat panel detector according to an embodiment of the present invention;

fig. 4 is a first top view of a flat panel detector according to an embodiment of the present invention;

fig. 5 is a third cross-sectional view of a flat panel detector according to an embodiment of the present invention;

fig. 6 is a fourth cross-sectional view of a flat panel detector according to an embodiment of the present invention;

fig. 7 is a second top view of a flat panel detector according to an embodiment of the present invention;

fig. 8 is a third top view of a flat panel detector according to an embodiment of the present invention;

fig. 9 is a flowchart of a method for manufacturing a flat panel detector according to an embodiment of the present invention.

Reference numerals

10-a substrate; 11-a photodiode; 12-a thin film transistor; 121-a gate; 122-a source electrode; 123-a drain electrode; 124-active layer; 13-gate scan line; 14-a data line; 15-data driving circuit; 16-a scan drive circuit; 17-a planarization layer; 18-a scintillation layer; 19-a signal line; 20-a transmissive conductive layer; 201-a conductive pattern; 21-a transparent conductive layer; 22-a passivation layer; 23-conductive connection.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The structure of the flat panel detector is similar to that of the liquid crystal display, as shown in fig. 1, each photosensitive region (a region surrounded by the gate scan line 13 and the data line 14, similar to a pixel region of the liquid crystal display region) of the flat panel detector includes a photodiode 11 and a Thin Film Transistor (TFT) 12, a gate of the TFT 12 is connected to the gate scan line 13 of the flat panel detector, a drain of the TFT 12 is connected to the data line 14 of the flat panel detector, a source of the TFT 12 is connected to the photodiode 11, and one end of the data line 14 is connected to the data driving circuit 15 through a connection pin.

The flat panel detector controls the on/off state of the thin film transistor 12 by the scanning drive circuit 16, and when the thin film transistor 12 is turned on, a photocurrent signal generated by the photodiode 11 is read out sequentially through the data line 14 connected to the thin film transistor 12 and the data drive circuit 15. The collection of the photoelectric signals is completed by controlling the timing sequence of the signals on the gate scanning lines 13 and the data lines 14, that is, the collection of the photoelectric current signals generated by the photodiode 11 is completed by controlling the on-off state of the thin film transistor 12.

Fig. 2 shows a schematic structural diagram of an amorphous silicon flat panel detector, and a main structure of the flat panel detector includes a substrate 10, a photodiode 11 and a thin film transistor 12 disposed on the substrate 10, a planarization layer 17 covering the photodiode 11 and the thin film transistor 12, and a scintillation layer 18 disposed on the planarization layer 17. Generally, the photodiode 11 includes an N-type semiconductor layer, an intrinsic semiconductor layer, and a P-type semiconductor layer, and the thin film transistor 12 includes a gate electrode, a gate insulating layer, an active layer, a source electrode, and a drain electrode, and the drain electrode of the thin film transistor is connected to the N-type semiconductor layer. The working principle of the flat panel detector is as follows: the X-rays are modulated by the human body on their way, the modulated X-rays are converted into visible light by the scintillation layer 18, the visible light is absorbed by the photodiode 11 and converted into charge carriers, the charge carriers are stored in the storage capacitor or the photodiode's own capacitor to form a charge image, each row of thin film transistors 11 is sequentially turned on by the scan drive circuit 16, and the charge image is output to the data drive circuit 15 in a manner of simultaneous readout of a row. The charge pattern read out by each tft 12 corresponds to the dose of incident X-rays and the amount of charge per photosensitive area, and hence the X-ray dose per photosensitive area, can be determined by processing.

The embodiment of the invention provides a flat panel detector, as shown in fig. 3, which includes a substrate 10, a plurality of photodiodes 11 disposed on the substrate 10, and a signal line 19 disposed on a side of the photodiode 11 away from the substrate 10 and connected to the photodiode 11, and further includes a transmissive conductive layer 20 disposed on a side of the photodiode 11 away from the substrate 10, wherein an orthogonal projection of the transmissive conductive layer 20 on the substrate 10 overlaps an orthogonal projection of the photodiode 11 on the substrate 10.

First, the signal line 19 is used to provide a signal to the photodiode 11, and in some embodiments, in order to improve the signal receiving effect of the photodiode 11, as shown in fig. 3, a transparent conductive layer 21 is disposed on a side of the photodiode 11 close to the signal line 19 to increase the contact area between the signal line 19 and the photodiode 11.

Second, the transmissive conductive layer 20 and the signal line 19 are both disposed on the side of the photodiode 11 away from the substrate 10, but the specific disposition positions of the transmissive conductive layer 20 and the signal line 19 are not limited. The transmissive conductive layer 20 may be provided on the side of the signal line 19 away from the photodiode 11 as shown in fig. 3, or the signal line 19 may be provided on the side of the transmissive conductive layer 20 away from the photodiode 11.

The transmissive conductive layer 20 and the signal line 19 may or may not be connected, and the transmissive conductive layer 20 and the signal line 19 may be designed with an interlayer insulating layer as needed, and the structure of fig. 3 is merely an illustration.

Thirdly, the orthographic projection of the transmissive conductive layer 20 on the substrate 10 and the orthographic projection of the photodiode 11 on the substrate 10 overlap, wherein the overlap may be that the orthographic projection of the transmissive conductive layer 20 on the substrate 10 and the orthographic projection of the photodiode 11 on the substrate 10 partially overlap, the orthographic projection of the transmissive conductive layer 20 on the substrate 10 includes the orthographic projection of the photodiode 11 on the substrate 10, or the orthographic projection of the photodiode 11 on the substrate 10 includes the orthographic projection of the transmissive conductive layer 20 on the substrate 10.

In any of the above structures, at least a portion of the transmissive conductive layer 20 is located directly above the photodiode 11 along the thickness direction of the flat panel detector to prevent external charges or induced charges from entering the photodiode 11, so as to avoid the influence on the accuracy of the detection result due to the change of the charges inside the photodiode 11.

Fourthly, a fixed voltage is input to the transmissive conductive layer 20, so that the transmissive conductive layer 20 can block external static electricity, and the photodiode 11 is prevented from being affected by the external static electricity after the external static electricity enters the photodiode 11; at the same time, the transmissive conductive layer 20 is required to ensure that light can be transmitted to the photodiode 11.

When determining the material of the transmissive conductive layer 20, for example, a conductive material with a transmittance of more than 50%, for example, a transparent conductive material may be selected, and may be, for example, IZO (Indium Zinc Oxide), ITO (Indium Tin Oxide), AZO (Al Zinc Oxide), IFO (Indium fluoride), or the like.

Wherein the transmissive conductive layer 20 may include a plurality of conductive patterns, each conductive pattern corresponding to at least one photodiode 11; the transmissive conductive layer 20 may be formed in a single plane as a whole and may correspond to all the photodiodes 11.

Fifth, the flat panel detector illustrated in fig. 3 only illustrates one connection relationship among the components in the flat panel detector, and is not limited.

According to the flat panel detector provided by the embodiment of the invention, the transmission conductive layer 20 is arranged on the side, away from the substrate 10, of the photodiode 11, so that the transmission conductive layer 20 carrying voltage can isolate external static electricity from the photodiode 11, and visible light cannot be influenced to irradiate the photodiode 11, thereby relieving the influence of the external static electricity on the photodiode 11, improving the anti-static capability of the flat panel detector and ensuring the yield of obtained pictures.

In some embodiments, in order to ensure that the transmissive conductive layer 20 can completely block the influence of external static electricity on the photodiode 11 as much as possible, as shown in fig. 4, the orthographic projection of the transmissive conductive layer 20 on the substrate 10 covers the orthographic projection of the photodiode 11 on the substrate 10.

Here, when the transmissive conductive layer 20 is disposed between the signal line 19 and the photodiode 11, the signal line 11 may be electrically connected with the photodiode 11 through the transmissive conductive layer 20.

In some embodiments, as shown in fig. 4 and 5, the signal line 19 is disposed between the transmissive conductive layer 20 and the photodiode 11.

That is, the transmissive conductive layer 20 is provided on the signal line 19 on the side away from the photodiode 11, and another interlayer structure may or may not be provided therebetween.

Here, by disposing the signal line 19 between the transmissive conductive layer 20 and the photodiode 11, on the one hand, the transmissive conductive layer 20 can protect the signal line 19, and on the other hand, it is not necessary to form a via hole in the transmissive conductive layer 20, which facilitates the transmissive conductive layer 20 to completely cover the photodiode 11.

In some embodiments, as shown in fig. 5, a passivation layer 22 is disposed between the transmissive conductive layer 20 and the signal line 19.

By arranging the passivation layer 22 between the transmissive conductive layer 20 and the signal line 19, that is, adding a transmissive conductive layer 20 on the basis of the conventional flat panel detector, only one process for preparing the transmissive conductive layer 20 is needed when preparing the flat panel detector provided by the invention, so that the technical difficulty is small and the technology is mature.

In some embodiments, as shown in fig. 6, the transmissive conductive layer 20 is disposed on the surface of the signal line 19.

That is to say, after the signal line 19 is prepared, the transmissive conductive layer 20 is directly prepared without preparing the passivation layer 22, so that the problem that the signal line 19 is over-etched due to the influence of process fluctuation when the passivation layer 22 is prepared, and the image quality is influenced by the signal fluctuation on the signal line 19 can be avoided. On the basis, the transmission conducting layer 20 is arranged on the surface of the signal line 19, on one hand, the signal lines 19 are communicated through the transmission conducting layer 20 to compensate signals on the signal lines 19, on the other hand, the transmission conducting layer 20 well protects the signal lines 19, so that the stability of the signals on the signal lines 19 can be improved, on the other hand, the signals are provided for the transmission conducting layer 20 through the signal lines 19, a separate signal source is not needed to provide the signals for the transmission conducting layer 20, and the structure is simplified.

In some embodiments, as shown in fig. 7, the transmissive conductive layer 20 includes a plurality of conductive patterns 201, the conductive patterns 201 being disposed corresponding to the photodiodes 11; the plurality of conductive patterns 201 are connected to each other by a conductive connection portion 23.

The structure of the flat panel detector is shown in fig. 8 when the transmissive conductive layer 20 is not provided, and the structure of the flat panel detector is shown in fig. 7 when the transmissive conductive layer 20 is provided. Fig. 7 illustrates one conductive pattern 201 corresponding to one photodiode 11, and here, one conductive pattern 201 may correspond to a plurality of photodiodes 11. As shown in fig. 7, there is an overlapping region between the conductive connection portion 23 and the gate scan line 13 or the data line 14 along the thickness direction of the flat panel detector, and in order to avoid parasitic capacitance formed between the conductive connection portion 23 and the gate scan line 13 or the data line 14, thereby affecting the accuracy of signals in the photodiode 11, the overlapping area between the conductive connection portion 23 and the gate scan line 13 or the data line 14 should be reduced as much as possible while ensuring the connection between the conductive patterns 201.

The conductive connection portion 23 is used to connect the plurality of conductive patterns 201 in the flat panel detector as a whole, and therefore, as shown in fig. 7, the conductive connection portion 23 is not necessarily arranged between two adjacent conductive patterns 201, and the number of the conductive connection portions 23 may be enough to connect the plurality of conductive patterns 201 in the flat panel detector. Of course, in order to secure the stability of the connection, some more conductive connection portions 23 may be provided. The shape and the arrangement position of the conductive connection portion 23 illustrated in fig. 7 are merely illustrative and not limitative.

The conductive patterns 201 are connected through the conductive connecting portion 23, the conductive patterns 201 in the whole flat panel detector can be in signal communication, when the conductive patterns 201 are arranged on the surface of the signal line 19, the signal lines 19 in parallel are communicated through the conductive patterns 201, so that the signal lines 19 are connected in series, signals on the signal lines 19 are compensated in all directions, the uniformity of the signals on the signal lines 19 is improved, and the quality of obtained pictures is improved.

In some embodiments, as shown in fig. 7, a thin film transistor 12 connected to the photodiode 11, and a gate scan line 13 and a data line 14 connected to the thin film transistor 12 are further provided on the substrate 10; the gate scan lines 13 and the data lines 14 cross to form photosensitive regions arranged in an array, and the conductive patterns 201 are located in the photosensitive regions.

In fig. 7, a bottom gate thin film transistor is taken as an example, but not limited thereto.

That is, one conductive pattern 201 corresponds to one photodiode 11, and the conductive pattern 201 is located in the photosensitive region without overlapping the gate scan line 13 and the data line 14.

In some embodiments, as shown in fig. 5, the thin film transistor 12 includes a gate electrode 121, a source electrode 122, and a drain electrode 123; an orthogonal projection of the gate electrode 121 on the substrate 10, an orthogonal projection of the source electrode 122 on the substrate 10, and an orthogonal projection of the drain electrode 123 on the substrate 10 are all non-overlapping with an orthogonal projection of the conductive pattern 201 on the substrate 10.

Here, as shown in fig. 5, the transmissive conductive layer 20, that is, the conductive pattern 201 is not provided directly above the gate electrode 121, the source electrode 122, and the drain electrode 123 of the thin film transistor 12 in the thickness direction of the flat panel detector.

Here, in order to avoid the conductive pattern 201 from affecting the performance of the thin film transistor 12, the conductive pattern 201 should be prevented from overlapping the gate electrode 121, the source electrode 122, and the drain electrode 123 in the thin film transistor 12 as much as possible, that is, an orthogonal projection of the conductive pattern 201 on the substrate 10 covers an orthogonal projection of the photodiode 11 on the substrate 10, and does not cover an orthogonal projection of the gate electrode 121, the source electrode 122, and the drain electrode 123 in the thin film transistor 12 on the substrate 10.

To simplify the layout of the signal lines 19, in some embodiments, as shown in fig. 3, the signal lines 19 do not obscure the active layer of the thin film transistor 12, and only serve to provide signals to the photodiode 11.

In some embodiments, as shown in fig. 5, the orthographic projection of the signal line 19 on the substrate 10 covers the orthographic projection of the active layer 124 of the thin film transistor 12 on the substrate 10, so that the signal line 19 can shield the active layer 124 to prevent the active layer 124 from generating illumination carriers due to illumination.

On this basis, in some embodiments, the substrate 10 includes a bonding region; the flat panel detector further includes a conductive pattern disposed in the binding region, the conductive pattern being of the same material as the transmissive conductive layer 20 in the same layer.

Here, the conductive pattern is used for signal transmission within the binding region, which is necessarily a conductive structure.

The bonding region is the same as the bonding region of the liquid crystal display, and in order to ensure the bonding effect, the bonding region is usually provided with a conductive pattern, so that the embodiment of the invention forms the transmission conductive layer 20 and the conductive pattern of the bonding region from the same layer and the same material, that is, the transmission conductive layer 20 and the conductive pattern are formed synchronously, and the pattern of the mask plate is only required to be changed without increasing the times of the mask process, thereby simplifying the preparation process of the flat panel detector.

Based on this, according to the flat panel detector provided by the embodiment of the invention, the transmission conductive layer 20 is additionally arranged above the signal line 19 in the photosensitive region, so that firstly, the anti-static capability of the flat panel detector is greatly improved, secondly, the compensation of the transverse signal line 19 can be carried out, thirdly, the problem of over-etching of the signal line 19 is effectively avoided, fourthly, the mask process is not added, and therefore, the picture quality of pictures obtained by the whole flat panel detector can be greatly improved on the basis of not increasing the process difficulty.

An embodiment of the present invention further provides a method for manufacturing a flat panel detector, as shown in fig. 9, including:

s10, the photodiode 11 is formed on the substrate 10.

S20, forming a transmissive conductive layer 20 on the substrate 10 formed with the photodiode 11, and a signal line 19 connected to the photodiode 11, wherein an orthogonal projection of the transmissive conductive layer 20 on the substrate 10 overlaps an orthogonal projection of the photodiode 11 on the substrate 10.

In some embodiments, step S20 includes:

s201, a signal line 19 connected to the photodiode 11 is formed on the substrate 10 on which the photodiode 11 is formed.

S202, the transmissive conductive layer 20 is formed on the substrate 10 on which the signal line 19 is formed.

That is, after the photodiode 11 is formed, the signal line 19 is formed, and then the transmissive conductive layer 20 is formed.

In some embodiments, the orthographic projection of the transmissive conductive layer 20 on the substrate 10 covers the orthographic projection of the photodiode 11 on the substrate 10.

In some embodiments, the transmissive conductive layer 20 is formed after forming the passivation layer 22 on the substrate 10 on which the signal line 19 is formed.

To further simplify the manufacturing process, in some embodiments, the conductive patterns located at the binding regions are simultaneously formed while the transmissive conductive layer 20 is formed.

That is, the transmissive conductive layer 20 and the conductive pattern of the binding region are simultaneously formed.

The following describes a method for manufacturing a flat panel detector according to an embodiment of the present invention with specific examples.