阅读说明：本技术 用于x射线成像的辐射硬硅探测器 (Radiation hard silicon detector for x-ray imaging ) 是由 马茨·丹尼尔松 斯塔凡·卡尔松 许成 马丁·舍林 于 2018-04-25 设计创作，主要内容包括：公开了一种用于x射线成像的探测器系统。该探测器系统包括具有多个侧立探测器模块的探测器。每个侧立探测器模块包括适于朝向x射线源定向的第一边缘和基本上平行于入射x射线的方向延伸的正面。该正面包括至少一个电荷收集电极。多个侧立探测器模块中的至少一个子集从正面到正面成对布置,由此在所述成对布置的侧立探测器模块的正面之间限定正面到正面的间隙。成对布置的侧立探测器模块与布置在x射线源与侧立探测器模块之间的x射线路径中并且与正面到正面的间隙重叠的防散射准直器相关联。(A detector system for x-ray imaging is disclosed. The detector system includes a detector having a plurality of side-standing detector modules. Each of the side-standing detector modules comprises a first edge adapted to be oriented towards the x-ray source and a front face extending substantially parallel to a direction of incident x-rays. The front surface includes at least one charge collection electrode. At least a subset of the plurality of side-standing detector modules are arranged in pairs from the front face to the front face, thereby defining front-face-to-front-face gaps between the front faces of the side-standing detector modules arranged in pairs. The side-standing detector modules arranged in pairs are associated with anti-scatter collimators arranged in the x-ray path between the x-ray source and the side-standing detector modules and overlapping the front-to-front gap.)

1. A detector system for x-ray imaging, the detector system comprising a detector having a plurality of side-standing detector modules, wherein:

-each of said side-standing detector modules comprises a first edge adapted to be oriented towards the x-ray source and a front face extending substantially parallel to the direction of the incident x-rays, said front face comprising at least one charge collection electrode and wiring traces connecting the charge collection electrode with front-end electronics; and

-at least a subset of the plurality of side-standing detector modules arranged in pairs from front to front, thereby defining front-to-front gaps between the front faces of the side-standing detector modules arranged in pairs; and wherein

-the side-standing detector modules arranged in pairs are associated with an anti-scatter collimator arranged in the x-ray path between the x-ray source and the side-standing detector modules and overlapping the front-to-front gap, the anti-scatter collimator being arranged such that the front volume of the detector is protected against direct incident x-rays.

2. The detector system of claim 1, wherein the anti-scatter collimator comprises a high-Z material collimator.

3. The detector system of any of claims 1-2, wherein the front-to-front gap comprises an anti-scatter foil.

4. The detector system of any of claims 1 to 3, wherein the anti-scatter foil comprises a high-Z anti-scatter foil.

5. The detector system of claim 4, wherein the front face volume protected by the anti-scatter collimator exceeds 1% of a total detector volume.

6. The detector system of any of claims 1 to 5, wherein a back face of at least one of the paired arranged side standing detector modules is arranged to face a back face of the respective side standing detector module such that a back face-to-back face gap is formed between the side standing detector module and the respective side standing detector module.

7. The detector system of claim 6, wherein the back-to-back gap comprises an attenuating material.

8. The detector system of any of claims 1 to 7, wherein the edgewise detector module comprises an edgewise detector module of semiconductor material.

9. The detector system of claim 8, wherein the semiconductor material comprises silicon.

10. The detector system of any of claims 8 to 9, wherein the attenuating material comprises a material having similar attenuation characteristics as a semiconductor material used for a detector module.

11. The detector system of claim 10, wherein the attenuating material comprises silicone.

Technical Field

The present invention relates generally to detector systems for x-ray imaging, and more particularly, to a detector system having a side-standing detector module.

Background

Among the semiconductor materials that can be used, the detector material silicon has many benefits, such as the high purity and low energy required to generate charge carriers and the high mobility of charge carriers, all of which make silicon dominant among the available semiconductor materials used primarily for radiation detectors. By injecting a heavily doped layer on top of the lowly doped silicon as an electrical contact and by applying a reverse bias to the junction to fully deplete the detector, the radiation generated charge carrier electron-hole pairs can be collected by the respective charge collection electrodes.

Silicon has attracted considerable interest as a material for photon counting detectors, in particular for medical imaging. So far most detectors operate in an integrating mode, in the sense that they integrate the signals from multiple x-rays, and the signals are only digitized later to retrieve the best guess for the number of incident x-rays in the pixel. So-called photon counting detectors have become a viable alternative in some applications over the last few years and are mainly commercially available in mammography. Photon counting detectors have benefits because in principle the energy of each interacting x-ray can be measured, which yields additional information about the composition of the object, thereby improving image quality and/or reducing radiation dose.

Silicon has been successfully used in applications with lower energy, such as described in "Dose-Efficient System for Digital mapping" by M.Danielsson et al, Physics of Medical Imaging, vol.3977, pp.239-249San Diego, 2000. The main challenge of silicon is its low atomic number and low density, which means that it must be made very thick to obtain higher energy to be an effective absorber. The low atomic number also means that the proportion of compton scattered x-ray photons in the detector will exceed the light absorbed photons, which will create a problem with scattered photons, as they may induce signals in other pixels in the detector that are equivalent to noise in those pixels.

Such as Mats Danielsson et al, U.S. Pat. No. 8,183,535B2, "Silicon detector assembly for x-ray imaging", Cheng Xu et al: "Energy resolution of a segmented silicon strip detector for photo-counting spectral CT", nucleic instruments and Methods in Physics Research 715201311-17 and Xuejin Liu et al: as described in the "spectral response model for a multi-bin photo-counting patterned detector and its applications" Journal of Medical Imaging 232015033502, there is a continuing effort to evaluate the feasibility of using silicon for high energy applications such as computed tomography. A side-standing configuration of a silicon detector is described with which the detection efficiency of silicon is significantly improved. An anti-scatter foil of high-Z elements is attached to the substrate to prevent scattered photons due to compton scattering from reaching other silicon substrates.

A detector having a detector module provided with a collimator is shown in US 2004/0251419A 1 to Nelson et al. It is shown here how a collimator is provided for each detector in the strip detector. Adjacent bar detectors are separated by an air gap.

For any semiconductor detector, radiation induced damage leading to performance degradation is a problem. Related research on silicon has been conducted for decades. Particles passing through a silicon detector may interact with the material, resulting in the deposition of ionizing or non-ionizing energy. In both cases, the silicon detector may be damaged. There are two types of radiation damage to silicon detectors, body damage and surface damage. Bulk damage due to non-ionizing energy loss of incident particles is difficult to occur for energies less than about 300keV, while surface damage causes the most problems for silicon detectors used in the energy range of x-ray imaging from 40keV to 250 keV. Surface damage is primarily introduced by the loss of ionization energy of charged particles or x-ray photons, which results in the accumulation of positive charges and traps in the silica and at the interface between silicon and silica.

The success of silicon detectors using planar processes depends to a large extent on the possibility of passivating the front surface with an oxide layer. Typically, a silicon dioxide layer is thermally grown on a silicon substrate by exposing the silicon to an oxidizing ambient at elevated temperatures. When x-rays interact with the silicon detector, the charge carrier cloud is released. Charge carriers generated within the silicon may be collected by the charge collecting electrode under an applied electric field, but charge carriers generated within the silicon dioxide layer are trapped at the interface between the silicon and the silicon dioxide. Within a few nanometers from the interface between silicon and silicon dioxide, the region is highly disordered and deep defects are located in this region. Deep defects in the silicon dioxide trap holes and form fixed and positive oxide charges, which can cause problems with the detector. Of Jianguo Zhang: X-Ray radationamplitude dttides and design of a silicon pixel sensor for science at the XFEL andschwandt's: design of a radiation hard silicon pixel sensor for x-ray science discusses silicon dioxide and some other types of defects present at the interface between silicon and silicon dioxide.

Radiation-induced defects affect the electrical performance and mainly lead to the following performance degradation of silicon detectors: an increase in leakage current, an increase in depletion voltage, an increase in capacitance, formation of an electron accumulation layer, a decrease in breakdown voltage, and charge loss near the interface between silicon and silicon oxide. The electron accumulation layer is related to the change in electrical properties of the silicon detector and prevents complete depletion of the detector at the surface. The charge collection efficiency is also affected by the accumulation of electrons in the volume near the face surface of the detector. Therefore, there is a need in the art for semiconductor detectors, particularly silicon detectors, that are less sensitive when exposed to x-ray radiation.

Disclosure of Invention

It is an object of the present disclosure to provide a detector system with a detector having improved robustness with respect to x-ray sensitivity. A more specific object is to provide a detector system with a side-standing detector module having an improved robustness with respect to x-ray sensitivity.

According to one aspect of the proposed technique, a detector system for x-ray imaging is provided. The detector system includes a detector having a plurality of side-standing detector modules. Each of the side-standing detector modules comprises a first edge adapted to be oriented towards the x-ray source and a front face extending substantially parallel to a direction of incident x-rays. The front surface includes at least one charge collection electrode. At least a subset of the plurality of side-standing detector modules are arranged in pairs from the front face to the front face, thereby defining front-face-to-front gaps between the front faces of the side-standing detector modules arranged in pairs. The side-standing detector modules arranged in pairs are associated with anti-scatter collimators arranged in the x-ray path between the x-ray source and the side-standing detector modules and overlapping the front-to-front gap.

Embodiments of the proposed technique provide a detector system in which sensitive insulating layers disposed on the front face of the detector module are protected from damage and degradation caused by direct impact from x-ray radiation. Embodiments of the proposed technique also provide a detector system that is insensitive to misalignment of the detector modules and thus maintains a stable geometric efficiency. Embodiments of the proposed technique also provide a mechanism to prevent artifacts from directly illuminating or creating shadowing effects on the backside. The proposed technique also provides various detector system designs that can improve charge collection.

Drawings

Fig. 1 is a schematic diagram of an exemplary cross-section of a silicon substrate.

Figure 2 is a perspective view of a pair of detector modules and how the front of the detector is protected by an anti-scatter collimator.

Figure 3 is a perspective view of a pair of detector modules with an anti-scatter foil in between and how the front side of the detector is protected by an anti-scatter collimator.

Fig. 4 is a schematic diagram showing three pairs of side-by-side detector modules arranged front-to-front and provided with an anti-scatter collimator and an anti-scatter foil according to a specific embodiment of the proposed technology.

Figure 5 is a schematic diagram showing a different example that should be avoided when aligning the detector module with the anti-scatter collimator.

Fig. 6 is a schematic diagram showing the shadowing effect of an anti-scatter collimator and how this helps to maintain a stable geometric efficiency in case of geometric misalignment.

Fig. 7 is a schematic diagram showing a side-standing probe.

Fig. 8 is a schematic diagram of an x-ray detector system according to an exemplary embodiment.

Detailed Description

Fig. 8 is a schematic diagram of an x-ray detector system according to an exemplary embodiment. In this example, a schematic view of an X-ray detector with an X-ray source B emitting X-rays C is shown. The detector includes a plurality of detector modules stacked side-by-side. The detector modules comprise edges D pointing towards the source and they are preferably arranged in a slightly curved overall configuration. Two possible scanning movements (E, F) of the detector are indicated. In each scanning motion, the source may be stationary or moving, and in the scanning motion indicated by E, the x-ray source and the detector may rotate around the object located between the two. In the scanning motion indicated with F, the detector and the source may be translated relative to the object, or the object may be moving. Also in the scanning motion E, the object may be translated during rotation, a so-called helical scan. For example, for a CT implementation, the x-ray source and detector may be mounted in a gantry that rotates around the object or subject to be imaged. Figure 7 provides an illustration of a particular side-standing probe in more detail. It is shown how the front side of the detector comprises a plurality of detector strips, wherein each strip comprises a plurality of depth segments formed by charge collection electrodes extending in the direction of the incident x-rays (in this particular geometry, in the negative y-direction).

Fig. 1 is a schematic diagram illustrating an exemplary cross-section of a semiconductor substrate, e.g., a silicon substrate 101 having surface radiation damage. The metal contact 102 of the charge collecting electrode is deposited on the P of the corresponding electrode⁺The top of the implant 103. The oxide layer 104 on the front side of the silicon detector is most sensitive to x-ray radiation and after long-term x-ray radiation, a fixed positive charge forms on the interface between silicon and silicon dioxide. Ideally, the charge carriers released by each interacted photon will move along the field lines and then be collected by the corresponding charge collection electrode under the influence of an applied electric field by feeding a reverse bias to the back metal contact 105 of the detector. However, the electron accumulation layer 106 formed below the interface between silicon and silicon dioxide prevents complete depletion of the sensor at the front surface, which leads to a weak electric field in this region and hence to a loss of charge carriers. The high electric field is also a result of the proximity of the edges of the charge collection electrodes, indicated by 107, resulting in a reduction of the breakdown voltage.

The detector module shown in fig. 8 comprises a semiconductor material, such as silicon, having a front side and a back side. FIG. 1 provides an illustrative electronic feature with a detector on the front side. In particular embodiments, routing traces connect the charge collection electrodes with the front end electronics, and embodiments also exist that may include optional features, such as doped and undoped regions and insulating regions. The insulating region is highly sensitive to x-ray radiation and will be negatively affected if x-rays impinge directly on the front face.

It is an object of the proposed technique to provide a detector with improved robustness such that the front faces of the detector modules constituting the detector are protected from possible deteriorating effects of impinging x-rays. That is, the proposed technique aims to provide a mechanism by which the x-ray sensitive front face of the detector module is protected from x-rays. The protective features of the proposed technique also provide a detector system that can improve charge collection.

The basic mechanism is to prevent the high intensity direct x-ray beam from reaching the front volume of the detector by protecting the front face of a side-standing detector, such as a silicon side-standing detector, using an anti-scatter collimator, thus correspondingly reducing the risk of radiation damage. Most x-ray medical imaging applications require an anti-scatter collimator to reduce the amount of object scatter, for example, to improve image quality. Furthermore, the invention may help to maintain a stable geometric efficiency in case of misalignment of the detector modules, which is another benefit. In the following, the detector system will be described by using a specific detector material in the form of silicon. However, this is not a necessary feature, as the various embodiments to be described work equally well with any semiconductor material. That is, a detector system according to the proposed technique may comprise detector modules of any suitable semiconductor material.

To this end, a detector system for x-ray imaging is provided. Referring to fig. 2, a detector system is schematically shown comprising a detector having a plurality of side standing detector modules 201. Each of the side-standing detector modules 201 comprises a first edge adapted to be oriented towards the x-ray source and a front face 202 extending substantially parallel to the direction of the incident x-rays. The front side 202 of the detector module includes at least one charge collection electrode. At least a subset of the plurality of side-standing detector modules 201 that make up the detector are arranged in pairs from front to front, thereby defining front-to-front gaps between the front faces of the side-standing detector modules 201 arranged in pairs. The side-standing detector modules 201 arranged in pairs are associated with anti-scatter collimators 203 arranged in the x-ray path between the x-ray source and the side-standing detector modules 201 and overlapping the front-to-front gap.

Figure 2 provides a simplified diagram illustrating how the collimator 203 is arranged in the front-to-front gap defined by two adjacent detector modules 201. This particular arrangement provides protection for the front face 202 of the detector. The fact that the collimator overlaps the gap also prevents x-rays from impinging on the detector at an angle. In more detail, a pair of detector modules 201 are shown with their front faces 202 facing each other, and an anti-scatter collimator 203 positioned or arranged on top of the front faces of the two detector modules. The anti-scatter collimator is made of a high-Z material that can efficiently absorb direct x-ray beams and x-ray photons scattered by an object. The detector modules are arranged in a side-on configuration by orienting the edges of the detector modules towards incident x-rays. In this embodiment, the front faces of the detector modules face each other, so the anti-scatter collimator covers the front faces of both detector modules, which prevents a direct x-ray beam from reaching the front faces of the detector modules, thus reducing surface damage.

As can be seen in, for example, fig. 8, a detector according to the proposed technique may comprise a plurality of detector modules stacked side by side. According to the proposed technique, the stack of modules should comprise at least a subset of detector modules arranged in pairs such that the front face of a particular detector module faces the front face of another detector module.

Preferably, the anti-scatter collimator 203 comprises a high-Z material collimator. Since the collimator is intended to absorb the impinging radiation, the fact that high-Z material is present will ensure efficient absorption and thus reduce the risk that high-energy radiation impinges on sensitive parts of the detector module. I.e. the sensitive components are arranged on the front side of the detector module.

Embodiments of the proposed technology provide a detector system wherein the front-to-front gaps between adjacent detector modules comprise anti-scatter foils. This optional feature will provide further protection to the front face, since the anti-scatter foil will provide a countermeasure against possible residual radiation from e.g. the anti-scatter collimator 203. In particular embodiments, the anti-scatter foil may comprise a high-Z material, such as tungsten.

Fig. 3 is a schematic diagram showing how a pair of detector modules 201 are provided with an anti-scatter foil 201 attached between the front faces of the detector modules. Also shown is an anti-scatter collimator 203 arranged on top of the anti-scatter foil. The front surfaces of the two detector modules are attached to an anti-scatter foil, so that the anti-scatter collimator covers the anti-scatter foil and the front surfaces of the detector modules, which protects the front surfaces of the detector modules. Figure 4 is again a schematic diagram showing how pairs of silicon detectors as shown in figure 3 are placed adjacent to each other to form an array of detector modules.

In order to subject the detector module to less radiation damage, the front face surface should be covered by an anti-scatter collimator to prevent a direct x-ray beam from reaching the x-ray sensitive volume. The situation shown in fig. 5 should be avoided, where the front edge 202 of the silicon detector module is either aligned with the edge of the anti-scatter collimator 203 or outside the coverage of the anti-scatter collimator. In both cases, the direct x-ray beam may impact the front face surface of the detector module, causing radiation damage. Thus, to avoid both of the above cases, the coverage volume of the front face surface should exceed 1% of the total detector volume.

FIG. 6 is a schematic diagram showing how the above-described arrangement of anti-scatter collimators can help maintain stable geometric efficiency in the event of geometric misalignment of the detector modules. This example shows a side-up configuration of a detector module 201, wherein an anti-scatter collimator 203 covers the front side of the detector module and an anti-scatter foil 204. The volume of the detector modules on the front face becomes shaded 206. Mechanical alignment can be a challenge for long detectors, and geometric misalignment can lead to artifacts in the image. As shown in fig. 6 of the present embodiment, there is little loss of geometric efficiency caused by geometric misalignment of the detector modules.

Referring now to FIG. 4, a schematic illustration of a detector module array is provided in which a plurality of detector modules are arranged in pairs with their front faces facing each other. Each pair is provided with an anti-scatter collimator arranged to overlap a gap between the front faces of adjacent detector modules. In the figures, optional anti-scatter foils arranged in the spaces between the detector modules are also shown. The back faces of detector modules arranged in the pair-wise configuration shown will face the back face of another adjacent detector module. This will result in a back-to-back gap 205 between adjacent detector modules. Thus, according to a specific embodiment of the proposed technique, a detector system is provided, wherein the back face of at least one of the side standing detector modules 201 arranged in pairs 201 is arranged to face the back face of the respective side standing detector module 201 such that a back face-to-back face gap is formed between the side standing detector module 201 and the respective side standing detector module 201. According to a specific embodiment, the back-to-back gap defined by adjacent detector modules may be provided with an attenuating material arranged to prevent direct x-ray impingement or shadowing effects on the back side of the side-standing detector module 201.

A particular purpose of providing an attenuating material in the gap is to make the number of detected x-ray counts less sensitive to geometric misalignments. To this end, the narrow gap may be filled with an attenuator such as silicone, which maintains similar attenuation characteristics to silicon. In case of misalignment, an attenuator arranged between the detector modules will disable direct illumination on the detector side and bring the detected spectrum close to the spectrum that has passed through the silicon body.

Another beneficial feature that is realized is that the attenuating material may reduce the amount of x-ray radiation that penetrates the back of the side-standing detector module 201. For this purpose high-Z materials such as tungsten may be used, however these materials may lead to shadowing, which will negatively affect the efficiency of the detector, and a gas-filled gap alone in turn may lead to direct illumination on the back side, which will also negatively affect the detector system. To this end, the inventors have recognized that preferred materials should have similar attenuation characteristics to the semiconductor materials (e.g., silicon) used in the detector. A specific example that may be used where the detector module comprises silicon is silicone, which comprises silicon. Silicone has similar attenuation characteristics to silicon, and this combination forms a particularly suitable embodiment. However, many other combinations or detector materials and attenuating materials are possible. The main objective is to have an attenuating material with similar attenuation characteristics as the material used as the detector material.

The above-described embodiments are given as examples only, and it should be understood that the proposed technology is not limited thereto. Those skilled in the art will appreciate that various modifications, combinations, and alterations to the embodiments are possible without departing from the scope of the invention, which is defined in the appended claims. In particular, the different component solutions in the different embodiments may be combined in other configurations, where technically feasible.

Reference to the literature

·M.Danielsson,et al.,“Dose-efficient system for digital mammography”,Proc.SPIE,Physics of Medical Imaging,vol.3977,pp.239-249SanDiego,2000

·U.S.Pat.No.8,183,535B2 Mats Danielsson et al.“Silicon detector assembly for x-ray imaging”

·Cheng Xu et al.:“Energy resolution of a segmented silicon strip detector for photon-counting spectral CT”Nuclear Instruments and Methods inPhysics Research 715201311-17

·Xuejin Liu et al.:“Spectral response model for a multibin photon-counting spectral computed tomography detector and its applications”Journalof Medical Imaging 23 2015 033502

·US2004/0251419 A1 Nelson et al.“Device and system for enhanced SPECT,PET,and Compton scatter imaging in nuclear medicine”

·J.Zhang,“X-Ray Radiation Damage Studies and Design of a Silicon Pixel Sensor for Science at the XFEL”,Doctoral Thesis,University of Hamburg,DESY-THESIS-2013-018 2013.

·J.Schwandt,“Design of a Radiation Hard Silicon Pixel Sensor for X-ray Science”,Doctoral Thesis,Hamburg University,DESY-THESIS-2014-029 2014.