阅读说明：本技术 一种蚀刻装置及方法 (etching device and method ) 是由 赵晟佑 于 2019-08-30 设计创作，主要内容包括：本发明实施例提供了一种蚀刻装置及方法,蚀刻装置包括：容纳部,容纳部设置有一容纳空间,容纳部上设置有与容纳空间连通的第一通孔,第一通孔用于向容纳空间中导入刻蚀液,待处理硅片置于容纳空间中；导流部,用于在保证不同部位的刻蚀浓度相同的前提下将刻蚀液从第一通孔导流至待处理硅片处,导流部与容纳部固定连接,导流部置于容纳空间中且位于第一通孔和待处理硅片之间。这样可以使得所述待处理硅片的边缘部位和中心部位的刻蚀液浓度相同,可以保证所述待处理硅片的中心部位和边缘部位的蚀刻率相同,进而来保证待处理硅片的平坦度,同时还可以提高所述待处理硅片的生产效率,保证待处理硅片的准时制生产方式工艺流程。(The embodiment of the invention provides an etching device and a method, wherein the etching device comprises: the accommodating part is provided with an accommodating space, a first through hole communicated with the accommodating space is formed in the accommodating part, the first through hole is used for introducing etching liquid into the accommodating space, and a silicon wafer to be processed is placed in the accommodating space; the flow guide part is used for guiding the etching liquid to the position of the silicon wafer to be processed from the first through hole on the premise of ensuring the same etching concentration of different parts, the flow guide part is fixedly connected with the accommodating part, and the flow guide part is arranged in the accommodating space and is positioned between the first through hole and the silicon wafer to be processed. Therefore, the concentrations of the etching liquid at the edge part and the center part of the silicon wafer to be processed are the same, the etching rates of the center part and the edge part of the silicon wafer to be processed are the same, the flatness of the silicon wafer to be processed is further ensured, meanwhile, the production efficiency of the silicon wafer to be processed can be improved, and the just-in-time production mode process flow of the silicon wafer to be processed is ensured.)

1. an etching apparatus, comprising:

the silicon wafer processing device comprises an accommodating part, a first processing part and a second processing part, wherein the accommodating part is provided with an accommodating space, the accommodating part is provided with a first through hole communicated with the accommodating space, the first through hole is used for introducing etching liquid into the accommodating space, and a silicon wafer to be processed is placed in the accommodating space;

And the flow guide part is used for guiding the etching liquid to the position of the silicon wafer to be processed from the first through hole, is fixedly connected with the accommodating part, and is arranged in the accommodating space and positioned between the first through hole and the silicon wafer to be processed.

2. etching device according to claim 1, characterized in that the flow guide comprises at least:

A plate-like structure provided with a plurality of second through holes having axes parallel to the axis of the first through hole.

3. The etching apparatus of claim 2, wherein the plurality of second arrays of through holes are disposed on the plate-like structure.

4. the etching apparatus according to claim 2, wherein the diameter of the second through hole is 5mm to 10 mm.

5. Etching apparatus according to claim 2, wherein the plate-like structure is perpendicular to the silicon wafer to be treated.

6. The etching apparatus according to claim 1, wherein the housing portion further comprises:

The flow guide part is fixed on the accommodating part through the fixing structure.

7. Etching device according to claim 6, characterized in that the fixed structure comprises at least: a step surface disposed inside the receiving space.

8. The etching apparatus of claim 7, wherein the step face comprises: mutually perpendicular's first face and second face, first face with the axis of first through-hole is perpendicular, water conservancy diversion portion pastes fixedly on the first face.

9. The etching apparatus of claim 1, further comprising:

The rotating part is used for driving the silicon chip to be processed to rotate in the surface, and the rotating part at least comprises: the flow guide part is positioned below the rolling shaft;

And the supporting part is used for supporting the silicon wafer to be processed, is fixedly connected with the accommodating part and is positioned on two sides of the rotating part.

10. An etching method, characterized by being applied to the etching apparatus according to any one of claims 1 to 9;

The method comprises the following steps:

introducing etching liquid into the accommodating space through the first through hole of the accommodating part, and placing the silicon wafer to be processed in the accommodating space;

Guiding the etching liquid from the first through hole to the silicon wafer to be processed through the guide part;

And etching the silicon wafer to be processed by the etching liquid.

Technical Field

The invention relates to the field of processing and manufacturing of silicon wafers, in particular to an etching device and method.

Background

In the process of processing and manufacturing the silicon wafer, the mechanical processing can cause damage to the surface of the silicon wafer, and the damage to the surface of the silicon wafer seriously affects the quality of the silicon wafer. In order to remove damage on the surface of the silicon wafer, a chemical etching process may be performed on the silicon wafer using chemicals to improve the surface roughness and flatness of the silicon wafer. However, the conventional etching apparatus has an unreasonable structure, which often results in non-uniform flatness of the silicon wafer after etching.

in order to evaluate the quality of the silicon wafer, the flatness of the etched silicon wafer was sampled and measured. If the thickness variation of the silicon wafer is detected to exceed the threshold value, the processing conditions need to be reset, which reduces the production efficiency of the silicon wafer. In the process of resetting the processing conditions, the etching removal rate is reduced due to the temperature reduction of the etching solution, and the non-efficient production flow can cause the Just In Time (JIT) process flow to be unable to be performed.

Disclosure of Invention

the embodiment of the invention provides an etching device and method, which aim to solve the problem that the flatness of a silicon wafer after etching treatment is not uniform due to unreasonable structure of the existing etching device.

In a first aspect, to solve the above technical problem, an embodiment of the present invention provides an etching apparatus, including:

The silicon wafer processing device comprises an accommodating part, a first processing part and a second processing part, wherein the accommodating part is provided with an accommodating space, the accommodating part is provided with a first through hole communicated with the accommodating space, the first through hole is used for introducing etching liquid into the accommodating space, and a silicon wafer to be processed is placed in the accommodating space;

And the flow guide part is used for guiding the etching liquid to the position of the silicon wafer to be processed from the first through hole, is fixedly connected with the accommodating part, and is arranged in the accommodating space and positioned between the first through hole and the silicon wafer to be processed.

Optionally, the flow guide portion comprises at least:

a plate-like structure provided with a plurality of second through holes having axes parallel to the axis of the first through hole.

Optionally, the plurality of second arrays of through holes are disposed on the plate-like structure.

Optionally, the diameter of the second through hole is 5mm to 10 mm.

optionally, the plate-shaped structure is perpendicular to the silicon wafer to be processed.

optionally, the receiving portion further comprises:

the flow guide part is fixed on the accommodating part through the fixing structure.

Optionally, the fixing structure comprises at least: a step surface disposed inside the receiving space.

Optionally, the step surface includes: mutually perpendicular's first face and second face, first face with the axis of first through-hole is perpendicular, water conservancy diversion portion pastes fixedly on the first face.

Optionally, the etching apparatus further comprises:

The rotating part is used for driving the silicon chip to be processed to rotate in the surface, and the rotating part at least comprises: the flow guide part is positioned below the rolling shaft;

and the supporting part is used for supporting the silicon wafer to be processed, is fixedly connected with the accommodating part and is positioned on two sides of the rotating part.

in a second aspect, the embodiment of the present invention further provides an etching method, which is applied to the etching apparatus described above;

The etching method comprises the following steps:

Introducing etching liquid into the accommodating space through the first through hole of the accommodating part, and placing the silicon wafer to be processed in the accommodating space;

Guiding the etching liquid from the first through hole to the silicon wafer to be processed through the guide part;

And etching the silicon wafer to be processed by the etching liquid.

The embodiment of the invention has the following beneficial effects:

In the embodiment of the invention, the flow guide part is additionally arranged in the accommodating space, and the flow guide part can guide the etching liquid to the silicon wafer to be processed from the first through hole on the premise of ensuring that the concentrations of the etching liquid at different parts of the accommodating space are the same, so that the concentrations of the etching liquid at the edge part and the center part of the silicon wafer to be processed are the same, the etching rates of the center part and the edge part of the silicon wafer to be processed are ensured to be the same, the flatness of the silicon wafer to be processed is ensured, the production efficiency of the silicon wafer to be processed is improved, and the just-in-time production mode process flow of the silicon wafer to be processed is ensured.

drawings

FIG. 1 is a schematic structural diagram of a conventional etching apparatus;

FIG. 2 is a schematic structural diagram of an etching apparatus according to an embodiment of the present invention;

FIG. 3 is a schematic structural diagram of a flow guide portion according to an embodiment of the present invention;

FIG. 4 is a flowchart illustrating an etching method according to an embodiment of the invention.

Detailed Description

In order to make the technical problems, technical solutions and advantages of the present invention more apparent, the following detailed description is given with reference to the accompanying drawings and specific embodiments.