阅读说明：本技术 一种具有多通道电流栓的sa-ligbt器件 (SA-LIGBT device with multichannel current bolt ) 是由 陈伟中 李顺 黄垚 黄元熙 黄义 贺利军 张红升 于 2019-09-17 设计创作，主要内容包括：本发明涉及一种具有多通道电流栓的SA-LIGBT器件,属于功率半导体器件领域。本发明的多通道电流栓的SA-LIGBT器件主要是在器件的集电极区域设置n个横向P柱,形成多个电子通道,构成电流栓结构,具有以下作用：(1)正向导通时,电流栓相对于对电子电流呈关闭状态,使得晶体管的集电极短路电阻增大,从而完全消除传统SA-LIGBT的snapback效应；(2)正向导通时降低压降V<Sub>on</Sub>；(3)关断时,P柱之间形成的三条电子通道可有效提高电子的抽取效率,减少关断时间。(The invention relates to an SA-LIGBT device with a multi-channel current bolt, and belongs to the field of power semiconductor devices. The SA-LIGBT device of the multi-channel current plug mainly arranges n transverse P columns in a collector region of the device to form a plurality of electronic channels to form a current plug structure, and has the following functions: (1) when the current plug is conducted in the positive direction, the current plug is in a closed state relative to the electron current, so that the short-circuit resistance of the collector of the transistor is increased, and the snapback effect of the traditional SA-LIGBT is completely eliminated; (2) reducing voltage drop V in forward conduction on (ii) a (3) When the switching-off is carried out, three electronic channels formed between the P columns can effectively improve the extraction efficiency of electrons and reduce the switching-off time.)

1. An SA-LIGBT device with a multi-channel current plug is characterized in that a collector region of the device contains n transverse P columns, wherein n is a positive integer, the longitudinal widths of the n transverse P columns are equal, the longitudinal intervals formed between the adjacent P columns are equal, one ends of the P columns close to P-bodies (5) in the device are longitudinally aligned, the other ends of the bottommost P columns in the P columns are connected with side boundaries of the device, the bottommost P columns have the largest transverse length, and the transverse lengths of the rest P columns are equal.

2. the SA-LIGBT device with multi-channel current plug according to claim 1, wherein the P pillars are all surrounded by N-buffers (7).

3. The SA-LIGBT device with multichannel current bolt of claim 2, characterized in that, in the P post top layer P post transversely be provided with P-collector (8) and N-collector (10) in parallel, P-collector with the longitudinal width of N-collector equals, the longitudinal separation that top layer P post and P-collector formed equals with the longitudinal separation between the adjacent P post, the one end of N-collector with P-collector links to each other, the other end of N-collector with the side boundary of device links to each other.

4. the SA-LIGBT device with the multi-channel current plug as claimed in claim 3, wherein the sum of the lateral lengths of the P P-collector and the N-collector is equal to the lateral length of the bottommost P column.

5. a SA-LIGBT device with multi-channel current plug according to claim 4, characterized in that the collector region further comprises a collector electrode (9) arranged directly above the P-and N-collector.

6. The SA-LIGBT device with multi-channel current plug of claim 5, wherein the P-pillar is a heavily doped P-type semiconductor.

7. the SA-LIGBT device with the multi-channel current plug as claimed in any one of claims 1 to 6, wherein the device further comprises a P-type substrate (15), SiO, which are sequentially arranged from bottom to top₂A dielectric isolation layer (14) and an N-type drift region (6).

8. The SA-LIGBT device with the multi-channel current plug as claimed in claim 7, wherein the device further comprises a P-body (5), the P-body and the collector region are respectively located at two ends of the device after being isolated by the N-type drift region, an N + electron emitter (2) is further arranged at the upper part of the P-body, an emitter (1), a gate (3) and a gate oxide (4) are sequentially arranged at the upper part of the N + electron emitter from left to right, and the gate oxide is located right below the gate.

9. the SA-LIGBT device with the multi-channel current plug as claimed in claim 8, wherein when n is 3, P column I (11), P column II (12) and P column III (13) with equal longitudinal width are arranged in the collector region of the device from top to bottom.

10. The SA-LIGBT device with multichannel current plug according to claim 9, characterized in that the longitudinal space formed between P-pillars I and ii is equal to the longitudinal space formed between P-pillars ii and iii, the lateral length of P-pillars I and ii is equal to and less than the lateral length of P-pillar iii, one end of P-pillars I, P near the P-body in the device is aligned longitudinally, and the other end of P-pillar iii is in contact with the side boundary of the device.

Technical Field

the invention belongs to the field of power semiconductor devices, and particularly relates to an SA-LIGBT device with a multi-channel current bolt.

Background

An L IGBT (Insulated Gate Bipolar Transistor) is a Bipolar semiconductor power device in which a MOSFET and a BJT are combined, has the advantages of reduced on-state voltage, low driving power consumption, high operating frequency, and the like, is widely used in the fields of communication technology, new energy devices, and various consumer electronics, and is a core device of an electronic power system. Among them, LIGBT (Lateral Insulated Gate Bipolar Transistor) is easy to integrate on Si-based, and is generally applied in SOI-based power intelligent system, and is a typical representative of Bipolar semiconductor devices.

The conventional LIGBT has two carriers, namely, electron and hole, to participate in conduction when it is turned on. At turn-off, the large number of carriers stored in the drift region causes large turn-off losses of the transistor, resulting in a slow turn-off speed of the transistor. An Anode short-circuit structure N-collector is introduced to an SA-LIGBT (short Anode Insulated Gate Bipolar Transistor) on the basis of the traditional LIGBT. Electrons in the drift region can be rapidly extracted through the N-collector, so that the turn-off loss of the transistor is effectively reduced, and the turn-off time of the transistor is shortened. However, the introduction of the N-collector also causes the transistor to generate a switching from the unipolar conduction mode to the bipolar mode when the transistor is turned on, so that the transistor generates a voltage rebound phenomenon, namely snapback effect. The Snapback effect can cause uneven current distribution of the transistor and seriously affect the reliability of the work of the device.

In order to better promote the application of the SA-LIGBT, the SA-LIGBT needs to be further improved, and the structure thereof needs to be improved, so as to avoid the snapback effect and improve the reliability of the device.

Disclosure of Invention

in view of the above, the present invention is directed to an SA-LIGBT device with a multi-channel current plug.

in order to achieve the purpose, the invention provides the following technical scheme:

An SA-LIGBT device with a multi-channel current plug, wherein a collector region of the device comprises n transverse P columns, n is a positive integer, the longitudinal widths of the n transverse P columns are equal, the longitudinal intervals formed between the adjacent P columns are equal, one ends of the P columns close to P-bodies in the device are longitudinally aligned, the other ends of the bottommost P columns in the P columns are connected with side boundaries of the device, the bottommost P columns have the largest transverse length, and the transverse lengths of the rest P columns are equal.

Preferably, n is an integer of 2 or more.

Preferably, the P columns are all surrounded by N-buffer 7.

preferably, in the P column, a P-collector8 and an N-collector10 are transversely arranged in parallel above the topmost P column, the P-collector is equal to the longitudinal width of the N-collector, the longitudinal interval between the topmost P column and the P-collector is equal to the longitudinal interval between adjacent P columns, one end of the N-collector is connected with the P-collector, and the other end of the N-collector is connected with the side boundary of the device.

Preferably, the sum of the lateral lengths of the P-collector and the N-collector is equal to the lateral length of the bottommost P column.

Preferably, the collector region further includes a collector electrode 9 disposed directly above the P-collector and the N-collector.

Preferably, the P-pillar is a heavily doped P-type semiconductor.

Preferably, the device further comprises a P-type substrate 15 and SiO which are arranged from bottom to top in sequence₂a dielectric isolation layer 14, an N-type drift region 6.

preferably, the device further comprises a P-body 5, the P-body and the collector region are respectively located at two ends of the device after being isolated by the N-type drift region, the upper portion of the P-body is further provided with an N + electron emission region 2, the upper portion of the N + electron emission region is sequentially provided with an emitter 1, a gate 3 and a gate oxide 4 from left to right, and the gate oxide is located under the gate.

preferably, when n is 3, the collector region of the device includes P pillars I11, ii 12 and iii 13 having the same longitudinal width and arranged in sequence from top to bottom.

Preferably, the longitudinal spacing formed between P pillars I and ii is equal to the longitudinal spacing formed between P pillars ii and iii, the lateral lengths of P pillars I and ii are equal and less than the lateral length of P pillar iii, one ends of P pillars I, P in pillars ii and iii, which are close to the P-body in the device, are aligned longitudinally, and the other ends of P pillars iii are in contact with the boundary of the device.

the invention has the beneficial effects that: the SA-LIGBT device with the multi-channel current bolt has the advantages that (1) when the device is conducted in the forward direction, a current bolt structure formed by N transverse P columns and an N-buffer surrounding the P columns can form a PN junction to repel electrons flowing to an N-collector, and the current bolt structure formed by the P columns is equivalent to a closed state to the electron current, so that the collector short-circuit resistance is increased, and the snapback effect brought by the traditional SA-LIGBT is eliminated; (2) when the device is turned off, electrons can be rapidly extracted by the N-collector through an electronic channel formed between the transverse P columns, and the turn-off time of the device is effectively reduced.

Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the means of the instrumentalities and combinations particularly pointed out hereinafter.

Drawings

For the purposes of promoting a better understanding of the objects, aspects and advantages of the invention, reference will now be made to the following detailed description taken in conjunction with the accompanying drawings in which:

FIG. 1 is a schematic diagram of a conventional LIGBT;

FIG. 2 is a schematic structural diagram of a conventional SA-LIGBT;

Fig. 3 is a schematic structural diagram of an SA-LIGBT with a multi-channel current plug according to the present invention, where n is 3;

FIG. 4 is a schematic diagram of an equivalent circuit of the new architecture SA-LIGBT;

FIG. 5 is a forward guideIn general mode, the concentrations of the conventional SA-LIGBT and the transverse P column are 1 × 10 respectively¹⁷cm^-3、1×10¹⁸cm^-3And 1X 10¹⁹cm^-3Comparing the current-voltage curve of the new structure SA-LIGBT;

FIG. 6 shows the concentration of the P column in the forward conduction mode being 1 × 10¹⁷cm^-3、1×10¹⁸cm^-3And 1X 10¹⁹cm^-3A transverse distribution graph of the electron concentration of the new structure SA-LIGBT is formed in the range that the coordinate Y is 2 mu m, and the coordinate X is not less than 14 mu m and not more than 17 mu m (wherein X is the transverse length of the device, and Y is the longitudinal length of the device);

FIG. 7 is a schematic diagram of specific coordinates of the new structure SA-LIGBT collector region;

FIG. 8 is a schematic diagram of the forward conduction of the new structure SA-LIGBT with the electron channel spacing d of 0.5 μm, 0.6 μm and 0.7 μm, respectively;

FIG. 9 is a schematic current flow diagram of the new structure SA-LIGBT in both unipolar conduction mode and bipolar conduction mode, where a is the unipolar conduction mode and b is the bipolar conduction mode;

FIG. 10 is a graph showing the vertical distribution of electron concentration in the unipolar conduction mode and the bipolar conduction mode, respectively, in the range of X-16 μm, 0. ltoreq. Y. ltoreq.4 μm, where a is the unipolar conduction mode and b is the bipolar conduction mode (where X is the lateral length of the device and Y is the vertical length of the device);

FIG. 11 is a schematic diagram of the turn-off simulation of the new architecture SA-LIGBT with the number of electronic channels being 1, 2 and 3;

FIG. 12 is a schematic diagram of a test circuit for testing the turn-off time of a transistor;

Fig. 13 is a graph comparing the change in electron concentration in the device at Y-4 μm between time t1 and time t4 for the new structure SA-LIGBT and the conventional LIGBT (Y is the longitudinal length of the device);

FIG. 14 is a schematic diagram of the process steps for manufacturing a new structure SA-LIGBT;

Wherein, 1-emitter, 2-N + electron emission region, 3-grid, 4-grid oxide layer, 5-P-body, 6-N type drift region, 7-N-buffer, 8-P-collector, 9-collector, 10-N-collector, 11-P column I,12-P column II, 13-P column III, 14-SiO₂Dielectric isolation layer, 15-P type substrate.

Detailed Description

The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention. It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present invention in a schematic way, and the features in the following embodiments and examples may be combined with each other without conflict.