阅读说明：本技术 玻璃面板及其制备方法、包含该玻璃面板的显示屏和终端 (Glass panel, preparation method thereof, display screen comprising glass panel and terminal ) 是由 庞欢 黄义宏 于 2019-09-12 设计创作，主要内容包括：本发明实施例提供一种玻璃面板,包括玻璃基板、设置在玻璃基板一侧或两侧表面的低静电AF膜层,低静电AF膜层包括氟化硅氧烷和有机硅烷抗静电剂,所述氟化硅氧烷的表面能小于或等于25mN/m。本发明实施例通过在现有玻璃面板表面的AF防指纹膜中引入抗静电组分,可降低玻璃面板在撕膜或摩擦时产生的静电,避免现有手机等电子产品在组装过程中,因撕膜或摩擦产生的静电导致的黑屏、花屏、静电横纹等显示不良问题。本发明实施例还提供了该玻璃面板的制备方法、及包含该玻璃面板的显示屏和终端。(The embodiment of the invention provides a glass panel, which comprises a glass substrate and a low-static AF film layer arranged on one side or two sides of the surface of the glass substrate, wherein the low-static AF film layer comprises fluorinated siloxane and an organosilane antistatic agent, and the surface energy of the fluorinated siloxane is less than or equal to 25 mN/m. According to the embodiment of the invention, the antistatic component is introduced into the AF anti-fingerprint film on the surface of the existing glass panel, so that the static electricity generated by the glass panel during film tearing or friction can be reduced, and the problems of poor display such as black screen, patterned screen, static cross striation and the like caused by the static electricity generated by film tearing or friction in the assembling process of electronic products such as mobile phones and the like are solved. The embodiment of the invention also provides a preparation method of the glass panel, a display screen comprising the glass panel and a terminal.)

1. A glass panel is characterized by comprising a glass substrate and a low-static AF film layer arranged on one side or two sides of the surface of the glass substrate, wherein the low-static AF film layer comprises fluorinated siloxane and an organosilane antistatic agent, and the surface energy of the fluorinated siloxane is less than or equal to 25 mN/m.

2. The glass panel of claim 1, wherein the fluorinated siloxane and the organosilane antistatic agent each form a covalent bond with the surface of the glass substrate.

3. The glass panel of claim 1, wherein the organosilane antistatic agent comprises one or more of an amino, hydroxyl, carboxyl, or polyoxyethylene ether modified polysiloxane.

4. The glass panel of claim 3, wherein the organosilane antistatic agent comprises one or more of amino-modified polydimethylsiloxane, hydroxyl-terminated modified polydimethylsiloxane, carboxyl-terminated modified polydimethylsiloxane, polyoxyethylene ether co-polysiloxane.

5. The glass panel of claim 1, wherein the fluorinated siloxane and the organosilane antistatic agent have sublimation temperatures that differ by less than 10 ℃.

6. The glass panel of claim 1, wherein the fluorinated siloxane has a molecular weight of 500g/mol to 10000g/mol and the organosilane antistatic agent has a molecular weight of 500g/mol to 10000 g/mol.

7. The glass panel of claim 1, wherein the mass ratio of the fluorinated siloxane to the organosilane antistatic agent is from 1:0.5 to 1: 4.

8. The glass panel of claim 1, wherein the low static AF film layer has a surface resistivity of 1.0 x 10⁹ohm-9.9×10¹²ohm。

9. The glass panel of claim 1, wherein the fluorinated siloxane and the organosilane antistatic agent are uniformly distributed in the low static AF film layer.

10. The glass panel of claim 1, wherein the organosilane antistatic agent forms a continuous network structure in the low static AF film layer.

11. The glass panel of claim 1, wherein the low static AF film layer has a thickness in a range from 2nm to 500 nm.

12. The glass panel according to claim 1, wherein a silicon dioxide layer is disposed between the glass substrate and the low-static AF film layer.

13. The glass panel of claim 12, wherein the silicon dioxide layer has a thickness in a range from 0.1nm to 500 nm.

14. A method for preparing a glass panel, comprising the steps of:

and (2) preparing a low-static AF film layer on one side or two sides of the glass substrate by evaporation, wherein the low-static AF film layer comprises fluorinated siloxane and an organosilane antistatic agent, and the surface energy of the fluorinated siloxane is less than or equal to 25 mN/m.

15. The preparation method according to claim 14, wherein the operation of preparing the low-static AF film layer on one or both surfaces of the glass substrate by evaporation comprises the following specific steps:

and placing an evaporation target material containing fluorinated siloxane and an organosilane antistatic agent in evaporation equipment, heating in vacuum to simultaneously sublimate the fluorinated siloxane and the organosilane antistatic agent, and depositing the fluorinated siloxane and the organosilane antistatic agent on the surface of the glass substrate.

16. The method according to claim 15, wherein the preparing of the evaporation target comprises:

dispersing fluorinated siloxane in a first organic solvent to obtain a first dispersion liquid, dispersing an organosilane antistatic agent in a second organic solvent to obtain a second dispersion liquid, dripping the first dispersion liquid and the second dispersion liquid onto a target carrier, and volatilizing the organic solvent to obtain the evaporation target.

17. The method according to claim 16, wherein the first organic solvent comprises at least one of a fluorocarbon-based organic solvent and a fluoroether-based organic solvent.

18. The method of claim 16, wherein the second organic solvent comprises at least one of ethanol, diethyl ether, n-propanol, isopropanol, n-butanol, isobutanol, acetone, dimethylformamide, dimethylacetamide, and pyrrolidone.

19. The method according to claim 14, wherein a silicon dioxide layer is formed on the surface of the glass substrate before the low-static AF film layer is formed by evaporation.

20. A display screen, comprising a display screen module and a glass panel covered on the display screen module, wherein the glass panel is the glass panel according to any one of claims 1 to 13, and the outer side surface of the glass panel is provided with the low-static AF film layer.

21. A terminal comprising a housing assembled on an outer side of the terminal, and a circuit board located inside the housing, wherein the housing comprises a display screen assembled on a front side, the display screen comprises a glass panel and a display module arranged on an inner side of the glass panel, the glass panel comprises a glass substrate, and a low-static AF film layer arranged on a surface of one side of the glass substrate facing the outer side of the terminal, the low-static AF film layer comprises fluorinated siloxane and an organosilane antistatic agent, and the surface energy of the fluorinated siloxane is less than or equal to 25 mN/m.

22. A terminal as in claim 21, wherein the fluorinated siloxane and the organosilane antistatic agent each form a covalent bond with the surface of the glass substrate.

23. A termination according to claim 21, wherein the organosilane antistatic agent comprises one or more of amino, hydroxyl, carboxyl or polyoxyethylene ether modified polysiloxanes.

24. A terminal as in claim 23, wherein the organosilane antistatic agent comprises one or more of amino-modified polydimethylsiloxane, hydroxyl-terminated modified polydimethylsiloxane, carboxyl-terminated modified polydimethylsiloxane, polyoxyethylene ether co-polysiloxane.

25. A terminal as in claim 21, wherein the fluorinated siloxane and the organosilane antistatic agent have sublimation temperatures that differ by less than 10 ℃.

26. A termination according to claim 21, characterised in that the fluorinated siloxane has a molecular weight of 500g/mol to 10000g/mol and the organosilane antistatic agent has a molecular weight of 500g/mol to 10000 g/mol.

27. A terminal as in claim 21, wherein the mass ratio of the fluorinated siloxane to the organosilane antistatic agent is in the range of 1:0.5 to 1: 4.

28. The terminal of claim 21, wherein the low-static AF film layer has a surface resistivity of 1.0 x 10⁹ohm-9.9×10¹²ohm。

29. The terminal of claim 21, wherein the fluorinated siloxane and the organosilane antistatic agent are uniformly distributed in the low static AF film layer.

30. The terminal of claim 21, wherein the organosilane antistatic agent forms a continuous network structure in the low static AF film layer.

31. The terminal of claim 21, wherein the low-static AF film layer has a thickness in a range of 2nm to 500 nm.

32. The terminal of claim 21, wherein a silicon dioxide layer is disposed between the glass substrate and the low static AF film layer.

33. The terminal of claim 32, wherein the silicon dioxide layer has a thickness in the range of 0.1nm to 500 nm.

Technical Field

The embodiment of the invention relates to the technical field of touch screens, in particular to a glass panel, a preparation method of the glass panel, a display screen comprising the glass panel and a terminal.

Background

In the assembling and transporting process of the touch screen of electronic products such as a mobile phone, in order to prevent the glass panel on the surface of the touch screen from being scratched, a protective film is required to protect the surface of the glass panel. In order to improve the Anti-smudging and smoothness of the glass panel, an Anti-Fingerprint (AF) film is usually formed on the surface of the glass panel, the AF film comprises perfluoropolyether siloxane mainly containing carbon, oxygen, fluorine and silicon, wherein the fluorine atom has strong electron-withdrawing ability, and the impedance of the AF material is more than 10¹³Ω, and low charge transfer rate due to its insulating property. Therefore, when the AF film layer is provided with the protective film, a high static voltage is easily generated when the protective film is peeled off from the touch panel surface, and static charge is hard to dissipate in a short time. The film tearing operation is performed in the procedures of incoming material inspection, dispensing and pressing and the like of an electronic product assembly production line such as a smart phone. Static charges generated by film tearing can be conducted to the pin end of a BTB (touch to Button) of the touch screen from the surface of the glass downwards, a discharge loop can be formed when the BTB pin touches a metal middle frame or other metal materials in the assembling process, and the generated current discharge can damage an IC chip, so that the poor display problems of black screens, patterned screens, static transverse striations and the like of the touch screen are caused. In addition, the surface of the glass panel can adsorb dust point foreign matters due to static electricity, so that the glass panel is not easy to wipe and influences the manufacturing production.

In order to solve the problems of poor display caused by film tearing or static friction of the touch screen and dust point foreign matter adsorption by static electricity, a low-static touch screen glass panel is urgently needed to be developed.

Disclosure of Invention

In view of this, an embodiment of the present invention provides a glass panel, in which an AF anti-fingerprint film on a surface of the glass panel includes an antistatic component, and the introduction of the antistatic component can reduce static electricity generated by the glass panel during film tearing or rubbing, so as to solve, to a certain extent, the problem of poor display such as black screen, patterned screen, and static cross striation caused by static electricity generated by film tearing or rubbing during the assembly process of electronic products such as mobile phones; and solves the problem of electrostatic adsorption of dust point foreign matters to a certain extent.

Specifically, a first aspect of embodiments of the present invention provides a glass panel including a glass substrate, a low-static AF film layer disposed on one or both side surfaces of the glass substrate, the low-static AF film layer including fluorinated siloxane having a surface energy of 25mN/m or less and an organosilane antistatic agent.

In an embodiment of the present invention, the fluorinated siloxane and the organosilane antistatic agent form covalent bonds with the surface of the glass substrate, respectively.

In an embodiment of the present invention, the organosilane antistatic agent comprises one or more of amino, hydroxyl, carboxyl or polyoxyethylene ether modified polysiloxane.

In an embodiment of the present invention, the organosilane antistatic agent includes one or more of amino-modified polydimethylsiloxane, hydroxyl-terminated modified polydimethylsiloxane, carboxyl-terminated modified polydimethylsiloxane, and polyoxyethylene ether co-polysiloxane.

In an embodiment of the invention, the difference in sublimation temperatures of the fluorinated siloxane and the organosilane antistatic agent is less than 10 ℃.

In an embodiment of the invention, the fluorinated siloxane has a molecular weight of 500g/mol to 10000g/mol and the organosilane antistatic agent has a molecular weight of 500g/mol to 10000 g/mol.

In an embodiment of the present invention, the mass ratio of the fluorinated siloxane to the organosilane antistatic agent is 1:0.5 to 1: 4.

In the embodiment of the invention, the surface resistivity of the low-static AF film layer is 1.0 multiplied by 10⁹ohm-9.9×10¹²ohm。

In an embodiment of the invention, the fluorinated siloxane and the organosilane antistatic agent are uniformly distributed in the low static AF film layer.

In the embodiment of the invention, in the low-static AF film layer, the organosilane antistatic agent forms a continuous network structure.

In the embodiment of the invention, the thickness of the low-static AF film layer is in the range of 2nm-500 nm.

In the embodiment of the invention, a silicon dioxide layer is arranged between the glass substrate and the low-static AF film layer.

In an embodiment of the present invention, the thickness of the silicon dioxide layer is in the range of 0.1nm to 500 nm.

According to the glass panel provided by the first aspect of the embodiment of the invention, the antistatic component is introduced into the existing AF anti-fingerprint film, so that static electricity generated by the glass panel during film tearing or friction can be reduced, and the problem of poor display of black screens, patterned screens, static cross striations and the like caused by static electricity generated by film tearing or friction in the assembling process of electronic products such as mobile phones and the like can be avoided.

In a second aspect, an embodiment of the present invention further provides a method for manufacturing a glass panel, including the following steps:

and (2) preparing a low-static AF film layer on one side or two sides of the glass substrate by evaporation, wherein the low-static AF film layer comprises fluorinated siloxane and an organosilane antistatic agent, and the surface energy of the fluorinated siloxane is less than or equal to 25 mN/m.

In the embodiment of the invention, the specific operation of preparing the low-static AF film layer on one side or two sides of the glass substrate by evaporation is as follows:

and placing an evaporation target material containing fluorinated siloxane and an organosilane antistatic agent in evaporation equipment, heating in vacuum to simultaneously sublimate the fluorinated siloxane and the organosilane antistatic agent, and depositing the fluorinated siloxane and the organosilane antistatic agent on the surface of the glass substrate.

In an embodiment of the present invention, the preparation of the evaporation target includes:

dispersing fluorinated siloxane in a first organic solvent to obtain a first dispersion liquid, dispersing an organosilane antistatic agent in a second organic solvent to obtain a second dispersion liquid, dripping the first dispersion liquid and the second dispersion liquid onto a target carrier, and volatilizing the organic solvent to obtain the evaporation target.

In an embodiment of the present invention, the first organic solvent includes at least one of a fluorocarbon organic solvent and a fluoroether organic solvent.

In an embodiment of the present invention, the second organic solvent includes at least one of ethanol, diethyl ether, n-propanol, isopropanol, n-butanol, isobutanol, acetone, dimethylformamide, dimethylacetamide, and pyrrolidone.

In the embodiment of the invention, before the low-static-electricity AF film layer is prepared by evaporation, a silicon dioxide layer is prepared on the surface of the glass substrate.

The preparation method provided by the second aspect of the embodiment of the invention has simple process and is suitable for industrial production.

The embodiment of the invention also provides a display screen, which comprises a display screen module and a glass panel covered on the display screen module and used for protecting the display screen module, wherein the glass panel is the glass panel disclosed by the first aspect of the embodiment of the invention, the low-static AF film layer is arranged on the outer side surface of the glass panel, and the surface energy of the fluorinated siloxane is less than or equal to 25 mN/m.

The embodiment of the invention also provides a terminal, which comprises a shell assembled on the outer side of the terminal and a circuit board positioned inside the shell, wherein the shell comprises a display screen assembled on the front side, the display screen comprises a glass panel and a display module arranged on the inner side of the glass panel, the glass panel comprises a glass substrate and a low-static AF film layer arranged on the surface of one side of the glass substrate facing the outer side of the terminal, the low-static AF film layer comprises fluorinated siloxane and an organosilane antistatic agent, and the surface energy of the fluorinated siloxane is less than or equal to 25 mN/m.

In an embodiment of the present invention, the fluorinated siloxane and the organosilane antistatic agent form covalent bonds with the surface of the glass substrate, respectively.

In an embodiment of the present invention, the organosilane antistatic agent comprises one or more of amino, hydroxyl, carboxyl or polyoxyethylene ether modified polysiloxane.

In an embodiment of the present invention, the organosilane antistatic agent includes one or more of amino-modified polydimethylsiloxane, hydroxyl-terminated modified polydimethylsiloxane, carboxyl-terminated modified polydimethylsiloxane, and polyoxyethylene ether co-polysiloxane.

In an embodiment of the invention, the difference in sublimation temperatures of the fluorinated siloxane and the organosilane antistatic agent is less than 10 ℃.

In an embodiment of the invention, the fluorinated siloxane has a molecular weight of 500g/mol to 10000g/mol and the organosilane antistatic agent has a molecular weight of 500g/mol to 10000 g/mol.

In an embodiment of the present invention, the mass ratio of the fluorinated siloxane to the organosilane antistatic agent is 1:0.5 to 1: 4.

In the embodiment of the invention, the surface resistivity of the low-static AF film layer is 1.0 multiplied by 10⁹ohm-9.9×10¹²ohm。

In an embodiment of the invention, the fluorinated siloxane and the organosilane antistatic agent are uniformly distributed in the low static AF film layer.

In the embodiment of the invention, in the low-static AF film layer, the organosilane antistatic agent forms a continuous network structure.

In the embodiment of the invention, the thickness of the low-static AF film layer is in the range of 2nm-500 nm.

In the embodiment of the invention, a silicon dioxide layer is arranged between the glass substrate and the low-static AF film layer.

In an embodiment of the present invention, the thickness of the silicon dioxide layer is in the range of 0.1nm to 500 nm.

According to the terminal provided by the embodiment of the invention, the low-static AF film layer is arranged on the surface of the adopted glass panel, so that the problems of poor display such as black screen, flower screen, static cross striation and the like caused by static electricity generated by film tearing or friction in the assembling process can be effectively solved.

Drawings

Fig. 1 is a schematic structural diagram of a terminal according to an embodiment of the present invention;

FIG. 2 is a schematic structural diagram of a glass panel according to an embodiment of the present invention;

FIG. 3 is a schematic structural view of a glass panel according to another embodiment of the present invention;

fig. 4 is a schematic structural diagram of a glass panel according to a first embodiment of the invention.

Detailed Description

The embodiments of the present invention will be described below with reference to the drawings.

Referring to fig. 1, an embodiment of the present invention provides a terminal 200, where the terminal 200 may be a mobile phone, or an electronic product such as a tablet computer, a notebook, a portable device, and an intelligent wearable product, and the terminal 200 includes a housing assembled outside the terminal, and a circuit board located inside the housing, where the housing may include a display screen assembled on a front side of the terminal and a rear cover assembled on a rear side of the terminal. The display screen may include a glass panel 100 and a display module disposed inside the glass panel 100. In the embodiment of the present invention, the display screen may be a touch display screen. In some embodiments of the present invention, the terminal 100 may further include a middle frame connected between the display screen and the rear cover, where the display screen, the middle frame and the rear cover are arranged in a stacked manner to form an enclosure space, and the battery, the circuit board and other components are arranged in the enclosure space. The specific arrangement of the middle frame is not limited, and the middle frame may be integrated with the rear cover, or may be placed inside the terminal 100 and accommodated in a space defined by the display screen and the rear cover.

As shown in fig. 2, the glass panel 100 includes a glass substrate 10, a low-static AF film layer 11 disposed on one or both surfaces of the glass substrate 10, the low-static AF film layer 11 including a stain-resistant component including fluorinated siloxane and an antistatic component including an organosilane antistatic agent. The organosilane antistatic agent is an organosilane compound with antistatic property, and can be a macromolecular compound or a small molecular compound. The fluorinated siloxane is fluorinated siloxane with surface energy less than or equal to 25mN/m, and can be perfluoropolyether siloxane in particular but not limited.

In the embodiment of the invention, in the low-static AF film layer 11, the fluorinated siloxane and the organosilane antistatic agent are uniformly distributed, so that the low-static AF film layer has good stain resistance and antistatic effect. The organosilane antistatic agent can react with silicon hydroxyl on the surface of the glass substrate to form stable chemical bonding, and can reduce the surface resistance and electronegativity of the glass. The organosilane antistatic agent can form a charge leakage path through the ionic conduction or dilution effect of polar groups, so that the introduction of the organosilane antistatic agent can reduce electrification and charge dissipation speed in the film tearing operation process, reduce electrostatic voltage generated in the film tearing operation, reduce electrostatic charge conducted from the glass surface to the pin end of the touch screen panel, and avoid poor display of a black screen, a patterned screen, an electrostatic cross striation and the like caused by the static generated by film tearing in the touch screen assembling process. In addition, the problem of electrostatic adsorption of dust point foreign matters can be effectively solved.

In general, the low-static AF film layer is provided on a surface of the glass substrate 10 on a side facing the outside of the terminal, i.e., a surface accessible to a user. In other application scenarios of the present invention, low-static AF film layers may be disposed on both surfaces of the glass substrate 10 according to practical application requirements.

In the embodiment of the invention, the organosilane antistatic agent can comprise polysiloxane modified by hydrophilic groups such as amino, hydroxyl, carboxyl or polyoxyethylene ether, and the introduction of polar hydrophilic groups such as amino, hydroxyl, carboxyl and polyoxyethylene ether can improve the antistatic capability of the polysiloxane. Specifically, the organosilane antistatic agent may include one or more of amino-modified polydimethylsiloxane, hydroxyl-terminated modified polydimethylsiloxane, carboxyl-terminated modified polydimethylsiloxane, and polyoxyethylene ether co-polysiloxane.

In the embodiment of the invention, the low-static AF film layer 11 is prepared by co-evaporation of fluorinated siloxane and an organosilane antistatic agent, and in order to ensure that the sublimation of two evaporation raw materials is basically synchronous in the evaporation process so as to finally deposit the two evaporation raw materials on a glass substrate to obtain a film layer with uniform distribution, the fluorinated siloxane and the organosilane antistatic agent with close or same sublimation temperature should be selected as far as possible. Alternatively, the difference in sublimation temperatures of the fluorinated siloxane and the organosilane antistatic agent is less than 10 ℃. Further, the difference between the sublimation temperatures of the two is less than 5 ℃. Further, the difference between the sublimation temperatures of the two is less than 3 ℃.

In the embodiment of the invention, the fluorinated siloxane and the organosilane antistatic agent respectively form covalent bonding with the surface of the glass substrate, and both components form reliable chemical bonding with the glass panel, so that the glass panel can keep good stain resistance and antistatic performance for a long time. The molecular weight of the fluorinated siloxane may be from 500g/mol to 10000g/mol and the molecular weight of the organosilane antistatic agent may be from 500g/mol to 10000 g/mol. When the fluorinated silicone is a perfluoropolyether silicone, the specific type thereof is not limited, and it may be a Z-type, Y-type, K-type, or D-type perfluoropolyether silicone.

In order to balance the dirt resistance and the antistatic property of the low-static AF film layer 11, the mass ratio of the fluorinated siloxane to the organosilane antistatic agent is controlled to be 1:0.5 to 1:4 in the embodiment of the present invention. Further, the mass ratio of the fluorinated siloxane to the organosilane antistatic agent may be controlled to be 1:0.8 to 1:4, and further may be 1:1 to 1: 2. The AF film layer has good dirt resistance and antistatic effect by proper mass ratio.

In the embodiment of the invention, the water contact angle of the low-static AF film layer 11 is greater than or equal to 110 °.

In the embodiment of the present invention, the surface resistivity of the low-static AF film layer 11 is 1.0 × 10⁹ohm-9.9×10¹²ohm (ohm); further, the surface resistivity was 1.0X 10⁹ohm-9.9×10¹⁰And (4) ohm. The low-static AF film layer has lower surface resistivity, and the transfer rate of charges on the film layer is higher, so that static charges generated by film tearing can be released, and the display problems of black screens, patterned screens, static cross striations and the like of touch screens caused by static charges generated by film tearing are avoided.

In the embodiment of the invention, in the low-static AF film layer 11, the organosilane antistatic agent forms a continuous network structure, so that a continuous static conducting path can be constructed, and the surface resistance can be reduced.

In the embodiment of the invention, the thickness of the low-static AF film layer 11 may be set in a range of 2nm to 500nm, and further may be set in a range of 10nm to 30 nm.

As shown in fig. 3, in the embodiment of the invention, a silicon dioxide layer 12 is further included between the glass substrate 10 and the low-static AF film layer 11. In some embodiments of the present invention, the thickness of the silicon dioxide layer 12 may be set in the range of 0.1nm to 500nm, further, the thickness may be in the range of 1nm to 300nm, and further, the thickness may be in the range of 2nm to 10 nm. The arrangement of the silicon dioxide layer 12 can improve the grafting rate of the fluorinated siloxane and the organosilane antistatic agent on the surface of the glass, and improve the adhesive force of the low-static AF film layer 11 on the surface of the glass substrate.

In the embodiment of the present invention, the glass substrate 10 may be made of a conventional glass material, including but not limited to, aluminosilicate glass, etc.

In the embodiment of the present invention, the specific shape and size of the glass panel are not limited, and may be set according to actual needs, and may be a 2D glass panel, a 2.5D glass panel, a 3D glass panel, and the like. In the embodiment of the present invention, the glass panel is not limited to be used as a cover glass for a display screen, and may be used as a terminal rear cover or other products requiring a glass panel.

In the embodiment of the invention, the visible light transmittance of the glass panel is within the range of 85-96%, and further, the visible light transmittance is within the range of 91-93%. The low-static AF film layer does not basically influence the transmittance of the glass panel.

In the embodiment of the invention, the tearing voltage of the glass panel can be evaluated by adopting the following method: and testing the surface electrostatic voltage peak value of the torn glass panel by adopting a Trek520 electrostatic voltage tester at the temperature of 20-25 ℃ and the humidity of 40-50% RH, wherein a tester is required to wear electric gloves and wrist bands and hold the glass panel by hand to tear the film, the distance between the glass panel and a desktop is more than 30cm, and the peeling speed of the torn film is more than 20 cm/s. According to the glass panel disclosed by the embodiment of the invention, when the AF anti-fingerprint film is coated, the organosilane antistatic agent is introduced, so that the electron transfer quantity of the glass panel and the glue layer of the protective film is reduced in the film tearing process, and the generation of static electricity of the torn film is greatly inhibited. Compared with the existing touch screen glass panel provided with the AF anti-fingerprint film without introducing the antistatic component, under the same test condition, the glass panel provided by the embodiment of the invention has lower film tearing voltage, so that the problem of poor display of black screens, patterned screens, static cross striations and the like caused by static electricity generated by film tearing in the assembly process of electronic products such as mobile phones and the like can be effectively solved.

In addition, the embodiment of the invention also provides a preparation method of the glass panel, which comprises the following steps:

and (2) preparing a low-static AF film layer on one side or two sides of the glass substrate by evaporation, wherein the low-static AF film layer comprises fluorinated siloxane and an organosilane antistatic agent, and the surface energy of the fluorinated siloxane is less than or equal to 25 mN/m.

In the embodiment of the invention, the specific operation of preparing the low-static AF film layer on one or both surfaces of the glass substrate by evaporation can be as follows:

placing an evaporation target material containing fluorinated siloxane and an organosilane antistatic agent in evaporation equipment, heating in vacuum to simultaneously sublimate the fluorinated siloxane and the organosilane antistatic agent, and depositing the fluorinated siloxane and the organosilane antistatic agent on the surface of the glass substrate.

Vacuum degree of 10 in the vapor deposition process^-1Pa-10^-3Pa, the deposition rate is 0.1nm/s-5nm/s, and the temperature in the vacuum cavity is controlled to be 24-60 ℃.

In an embodiment of the present invention, the preparation of the evaporation target may include the following steps:

dispersing fluorinated siloxane in a first organic solvent to obtain a first dispersion liquid, dispersing an organosilane antistatic agent in a second organic solvent to obtain a second dispersion liquid, dripping the first dispersion liquid and the second dispersion liquid onto a target carrier, and volatilizing the organic solvent to obtain the evaporation target. Wherein, the drying operation can be carried out at 40-60 ℃ to volatilize the organic solvent. The target material carrier can be steel wool.

In an embodiment of the present invention, the first organic solvent includes at least one of a fluorocarbon organic solvent and a fluoroether organic solvent.

In an embodiment of the present invention, the second organic solvent includes at least one of ethanol, diethyl ether, n-propanol, isopropanol, n-butanol, isobutanol, acetone, dimethylformamide, dimethylacetamide, and pyrrolidone.

In the embodiment of the invention, before the low-static-electricity AF film layer is prepared by evaporation, a silicon dioxide layer can be prepared on the surface of the glass substrate. The silicon dioxide layer can be produced by magnetron sputtering or by means of thermal evaporation. The thickness of the silicon dioxide layer may be set in the range of 0.1nm to 500nm, further, the thickness may be in the range of 1nm to 300nm, and further, the thickness may be in the range of 2nm to 10 nm.

In the embodiment of the invention, before the low-static AF film layer is prepared, the glass substrate may be pretreated, and the pretreatment may include ultra-hydrophobic cleaning, plasma treatment, and the like.

According to the preparation method provided by the embodiment of the invention, the low-static AF film layer with excellent dirt resistance and antistatic effect can be obtained only by one-step film coating process, the process is efficient and convenient, the cost is low, and large-scale industrial production can be realized.

The following examples are intended to illustrate the invention in more detail.