阅读说明：本技术 烧结体、基板、电路基板及烧结体的制造方法 (The manufacturing method of sintered body, substrate, circuit substrate and sintered body ) 是由 门马旬 青木克之 高桥聪志 于 2018-04-17 设计创作，主要内容包括：本发明的烧结体具备包含氮化硅的晶粒和晶界相。在一边对烧结体施加交流电压一边使交流电压的频率从50Hz到1MHz连续地变化而测定烧结体的介质损耗时,800kHz～1MHz的频带下的上述介质损耗的平均值ε<Sub>A</Sub>和100Hz～200Hz的频带下的上述介质损耗的平均值ε<Sub>B</Sub>满足式：|ε<Sub>A</Sub>-ε<Sub>B</Sub>|≤0.1。(Sintered body of the invention has crystal grain and Grain-Boundary Phase comprising silicon nitride.When making the frequency of alternating voltage continuously change from 50Hz to 1MHz and measure the dielectric loss of sintered body while applying alternating voltage to sintered body, the average value ε of the above-mentioned dielectric loss under the frequency band of 800kHz~1MHz A With the average value ε of the above-mentioned dielectric loss under the frequency band of 100Hz~200Hz B Meet formula: | ε A ‑ε B |≤0.1。)

1. a kind of sintered body has crystal grain and Grain-Boundary Phase comprising silicon nitride,

Wherein, connect the frequency of the alternating voltage from 50Hz to 1MHz while applying alternating voltage to the sintered body When changing and measuring the dielectric loss of the sintered body continuously, the dielectric loss in the frequency band of 800kHz~1MHz is averaged Value ε_AWith the average value ε of the dielectric loss in the frequency band of 100Hz~200Hz_BMeet formula: | ε_A-ε_B|≤0.1。

2. sintered body according to claim 1, wherein the average value ε_AAnd the average value ε_BRespectively 0.1 or less.

3. sintered body according to claim 1, wherein the Grain-Boundary Phase includes: being set to the section of the sintered body The region of the unit area of 100 100 μm of μ ms and a variety of glass compound phases with composition different from each other.

4. sintered body according to claim 3, wherein in the raman spectroscopy spectrum of a variety of glass compound phases extremely Few one includes

440cm^-1~530cm^-1Raman shift in the range of the 1st peak and

990cm^-1~1060cm^-1Raman shift in the range of the 2nd peak.

5. sintered body according to claim 3, wherein a variety of glass compound phases raman spectroscopy spectrum respectively Area in, the first big area S_M1Relative to second largest area S_M2Ratio be 1.1~3.0.

6. sintered body according to claim 1, wherein the Grain-Boundary Phase contains fluorine.

7. sintered body according to claim 1, thermal conductivity is 50W/mK or more.

8. a kind of substrate has sintered body described in claim 1.

9. substrate according to claim 8, with a thickness of 0.4mm or less.

10. a kind of circuit substrate, has: substrate according to any one of claims 8 and the metal plate engaged with the substrate.

11. a kind of manufacturing method of sintered body, has following process:

By alpha-silicon nitride powders, surface modifier, polymer binder and with identical as the functional group of the polymer binder Functional group and average molecular weight be less than the polymer binder organic compound mix in a solvent and prepare mixing The process of solution；

The process added sintering aid powder in the mixed solution and prepare material solution；

The process that the material solution is subjected to deaeration processing and prepares raw material slurry；

The process that the raw material slurry is formed and prepares sheet material；

The process that the sheet material is heated at 1000 DEG C of temperature below and prepares degreasing body；With

The at a temperature of process that is sintered by the degreasing body at 1600 DEG C~2000 DEG C.

12. manufacturing method according to claim 11, wherein heat of the organic compound in the polymer binder It is reacted below decomposition temperature with the surface modifier.

13. manufacturing method according to claim 11, wherein the surface modifier is silane coupling agent.

14. manufacturing method according to claim 11, wherein the polymer binder is acrylic resin.

15. manufacturing method according to claim 11, wherein the organic compound has carboxyl.

Technical field

Background technique

Silicon nitride sinter is known as the material with high intensity.In recent years, develop take into account high heat transferization and High-intensitive silicon nitride sinter.It has been known that there is the Grain-Boundary Phase for example by controlling thickness direction there are ratio reduces insulating properties Unevenness and improve the silicon nitride sinter of thermal conductivity, intensity, insulating properties.

Silicon nitride board engages with the metal plate comprising circuit and forms silicon nitride circuit substrate.Semiconductor element in recent years Part is along with high performance and junction temperature is up to 170 DEG C or more.Even if the silicon nitride circuit substrate junction temperature equipped with semiconductor element Rising also shows that excellent durability.

About semiconductor element, Si element, SiC element, GaN element constant power element are developed.Along with power component High performance and switching frequency is got higher.So-called switching frequency is the period of repeat switch.The switch frequency of next-generation power component Rate is from several 10Hz to the various of several 100kHz.Think that switching frequency rises to 1MHz or so.If being repeated according to switching frequency Switch electric current flowing or is not flowed according to its period then.

It is got higher like this along with the high performance of power component, junction temperature and switching frequency.Even above-mentioned nitridation silicon substrate Plate, insulating properties also improve.On the other hand, because switching frequency becomes larger, it is desirable that the insulating properties in the frequency band of wide scope.

Summary of the invention

Even the frequency that project to be solved by this invention is to provide alternating voltage also shows that excellent in the case where changing The sintered body of different insulating properties.

Detailed description of the invention

Fig. 1 is the figure for indicating an example of section structure for sintered body.

Fig. 2 is the figure for indicating an example of raman spectroscopy spectrum.

Embodiment is related to the manufacturing method of sintered body, substrate, circuit substrate and sintered body.