阅读说明：本技术 可变存储容量的单次可编程存储器 (The single programmable memory of varying storage capacity ) 是由 苗英豪 王富中 于 2018-05-24 设计创作，主要内容包括：本发明提供一种可变存储容量的单次可编程存储器,包括：多个存储单元和多个地址位；控制电路,用于根据烧录良率配置地址位与存储单元的对应关系。本发明的可变存储容量的单次可编程存储器,通过控制电路根据烧录良率配置地址位与存储单元的对应关系,在烧录良率未知或较低时,配置较多的备选存储单元以达到多次烧录提高芯片良率的目的,在烧录良率较高时,配置较少的备选存储单元以避免不必要的浪费,提高存储容量,节省芯片面积,降低制造成本,增强芯片适用性。(The present invention provides a kind of single programmable memory of varying storage capacity, comprising: multiple storage units and multiple address bits；Control circuit, for the corresponding relationship according to burning yield configurable address bit and storage unit.The single programmable memory of varying storage capacity of the invention, by control circuit according to the corresponding relationship of burning yield configurable address bit and storage unit, when burning yield is unknown or lower, more candidate storage unit is configured to achieve the purpose that multiple burning improves chip yield and configure less candidate storage unit when burning yield is higher to avoid unnecessary waste, improve memory capacity, chip area is saved, manufacturing cost is reduced, enhances chip applicability.)

1. a kind of single programmable memory of varying storage capacity characterized by comprising

Multiple storage units and multiple address bits；

Control circuit, for the corresponding relationship according to burning yield configurable address bit and storage unit.

2. the single programmable memory of varying storage capacity as described in claim 1, which is characterized in that each storage unit Including at least two writable subelements.

3. the single programmable memory of varying storage capacity as described in claim 1, which is characterized in that when burning yield is high In preset threshold, control circuit is configured to the corresponding storage unit of an address bit.

4. the single programmable memory of varying storage capacity as described in claim 1, which is characterized in that when burning yield not Know or lower than preset threshold, control circuit is configured to corresponding at least two storage units of an address bit.

5. the single programmable memory of varying storage capacity as described in claim 1, which is characterized in that the single can be compiled Journey memory is dielectric breakdown type single programmable memory.

6. the single programmable memory of varying storage capacity as claimed in claim 5, which is characterized in that the dielectric is hit The type single programmable memory of wearing includes fuse-type single programmable memory and anti-fuse type single programmable memory.

Technical field

The present invention relates to a kind of single programmable memories of varying storage capacity.

Background technique

In chip manufacturing proces, due to the influence of the various factors such as tool parameters, Temperature Distribution, it will lead between chip Different degrees of parameter drift is had, as there are deviations for the frequency of oscillator, reference voltage or current value and design value.This will lead It causes chip to occur nonuniformity problem in application process, to influence product yield, effect is imaged as caused by camera module Fruit deviation, driving voltage difference of different liquid crystal etc., therefore, it is necessary to be modified to chip special parameter, and will amendment Value be stored in register, these parameters are read and corrected after chip powers on, so as to improve consistency problem, it is good to improve product Rate.This function is usually using OTP(One Time Programming) memory, i.e. single programmable memory realizes.

Since the burning process of otp memory is usually destructive, such as dielectric breakdown type (including fuse-type and anti- Fuse-type) otp memory, burning success rate equally influences chip yield.

Fig. 1 is the otp memory structure of a typical media breakdown type, and metal-oxide-semiconductor A is as storage unit, under certain time One burning voltage VPP is added to its grid, brings it about breakdown to storage unit one writing, the storage unit of non-burning is " 0 ", is led to Selection switching tube M0 control is crossed to the read and write of storage unit.

In order to improve burning success rate, spare memory cell usually is increased to same address, this way is in limited core Sacrifice the memory capacity of otp memory under piece area, the storage unit of redundancy can also occupy biggish chip area, increase at This.

Fig. 2 is a circuit structure with spare otp memory, which includes multiple otp memories, when some It, can be by spare in the control spare otp memory of signal behavior when some storage unit burning in otp memory is unsuccessful Storage unit, until address burning success.The total memory capacity of the structure is the capacity of a single otp memory, but needs to account for With biggish chip area.

Fig. 3 is another practices well, i.e., in same otp memory, for the multiple storage unit As of same address configuration, When some storage unit A burning is unsuccessful, spare memory cell A can be selected, until address burning success.In OTP burning When yield is lower, it can achieve the purpose that multiple burning improves chip yield to different storage unit A burnings by selection, However when OTP burning yield is higher, more candidate storage unit causes unnecessary waste.

In addition, the burning of otp memory and read access time and burning voltage are all closely related with technological parameter, chip is more It needs during the new replacement according to the storage address capacity of otp memory, area, spare memory cell quantity and chip yield Between make compromise selection.

Summary of the invention

The purpose of the present invention is to provide a kind of single programmable memory of varying storage capacity, flexible configuration storage is held Amount guarantees chip yield, saves chip area, reduces manufacturing cost, enhances chip applicability.

Based on considerations above, the present invention provides a kind of single programmable memory of varying storage capacity, comprising: Duo Gecun Storage unit and multiple address bits；Control circuit, for the corresponding relationship according to burning yield configurable address bit and storage unit.

Preferably, each storage unit includes at least two writable subelements.

Preferably, when burning yield is higher than preset threshold, it is single that control circuit is configured to the corresponding storage of an address bit Member.

Preferably, when burning yield is unknown or is lower than preset threshold, it is corresponding at least that control circuit is configured to an address bit Two storage units.

Preferably, the single programmable memory is dielectric breakdown type single programmable memory.

Preferably, the dielectric breakdown type single programmable memory includes fuse-type single programmable memory and anti- Fuse-type single programmable memory.

The single programmable memory of varying storage capacity of the invention configures ground according to burning yield by control circuit Location position and the corresponding relationship of storage unit configure more candidate storage unit when burning yield is unknown or lower to reach Multiple burning improves the purpose of chip yield, when burning yield is higher, configures less candidate storage unit to avoid need not The waste wanted improves memory capacity, saves chip area, reduces manufacturing cost, enhances chip applicability.

Detailed description of the invention

By Figure of description and then it is used to illustrate the specific reality of the certain principles of the present invention together with Figure of description Mode is applied, other feature possessed by the present invention and advantage will be apparent or more specifically illustrated.

Fig. 1 is the structural schematic diagram of existing dielectric breakdown type otp memory；

Fig. 2 is the electrical block diagram of the spare otp memory of existing band；

Fig. 3 is the structural schematic diagram of the existing otp memory with spare memory cell；

Fig. 4 is the structural schematic diagram according to the otp memory of the varying storage capacity of one embodiment of the invention.

Specific embodiment

In the following detailed description of the preferred embodiment, reference is constituted to the appended attached drawing of present invention a part.Institute Attached attached drawing, which has been illustrated by way of example, can be realized specific embodiment.Exemplary embodiment is not intended to Exhaustive all embodiments according to the present invention.It is appreciated that without departing from the scope of the present invention, can use other Embodiment can also carry out the modification of structure or logic.Therefore, it is below specific descriptions and it is unrestricted, and this The range of invention is defined by the claims appended hereto.

Fig. 4 shows the otp memory of varying storage capacity according to an embodiment of the invention, which includes Multiple storage units and multiple address bits.Less candidate storage unit only need to be configured, is just enough to ensure that higher chip yield

In preferred embodiment shown in Fig. 4, which includes eight storage unit As, B, C ... H, each storage unit Including two writable subelements, for example, storage unit A includes two writable subelement A0, A1；Storage unit B includes two A writable subelement B0, B1；….It will be understood by those skilled in the art that otp memory of the invention can also include other The storage unit of quantity, each storage unit can also include the writable subelement of other quantity.Preferably, each storage is single Member includes at least two writable subelements.

In preferred embodiment shown in Fig. 4, which includes two kinds of combination of address bits.Combination 1 includes eight ground Location position 000,001,010,011,100,101,110,111, for realizing 8bits memory capacity.Combination 2 includes in combination 1 Eight address bits merge the new address bit 000 ' of to be formed four, 001 ', 010 ', 011 ', for realizing 4bits storage Capacity, wherein address bit 000 ' corresponds to 000 and 100 in combination 1, and address bit 001 ' corresponds to 001 He in combination 1 101 ... combinations 1 are not limited only to this with the corresponding relationship for the address bit for combining 2, herein only as an example, not a limit.This field skill Art personnel are appreciated that otp memory of the invention can also include the combination of address bits of other quantity, every kind of combination of address bits It can also include the address bit of other quantity.

In addition, otp memory of the invention further includes control circuit, for according to burning yield configurable address bit and storage The corresponding relationship of unit.

When OTP burning yield is lower, such as less than preset threshold when, or when first flow burning yield is unknown, control Circuit issues control signal, selects combination of address bits 2, and memory capacity is 4bits at this time.Then, four address bits respectively correspond Eight storage units are configured to corresponding two storage units of an address bit.For example, address bit 000 ' corresponds to storage unit A and E, address bit 001 ' correspond to storage unit B and F ... due to each storage unit include two writable subelements, Each address bit can at most carry out four burnings.That is, when burning yield is unknown or relatively low, it can be by eachly Location position configures more candidate storage unit, to achieve the purpose that multiple burning improves chip yield.

When OTP burning yield is higher, such as when higher than preset threshold, control circuit issues control signal, selects address bit Combination 1, memory capacity is 8bits at this time.Then, eight address bits respectively correspond eight storage units, that is, are configured to a ground The corresponding storage unit in location position.For example, address bit 000 corresponds to storage unit A, address bit 001 corresponds to storage unit B ... Since each storage unit includes two writable subelements, each address bit can at most carry out burning twice, work as burning When yield is higher, each address bit need to only configure less candidate storage unit, just be enough to ensure that higher chip yield, simultaneously Unnecessary waste is avoided, memory capacity is improved, saves chip area, reduces manufacturing cost, it is suitable to enhance chip The property used.

As it can be seen that the present invention realizes the reasonable distribution and control to OTP address bit and storage unit by control circuit, realize A kind of otp memory structure of varying storage capacity.When burning yield is unknown or relatively low, it is capable of providing and more alternatively deposits Storage unit carries out multiple burning to guarantee chip yield, when burning yield is higher, need to only configure less candidate storage unit It is just enough to ensure that chip yield, while can flexibly increase OTP memory capacity, so that more register calibration bits are provided, To adapt to different chip application environments.

Preferably, the single programmable memory is dielectric breakdown type single programmable memory.

Preferably, the dielectric breakdown type single programmable memory includes fuse-type single programmable memory and anti- Fuse-type single programmable memory.

The single programmable memory of varying storage capacity of the invention configures ground according to burning yield by control circuit Location position and the corresponding relationship of storage unit configure more candidate storage unit when burning yield is unknown or lower to reach Multiple burning improves the purpose of chip yield, when burning yield is higher, configures less candidate storage unit to avoid need not The waste wanted improves memory capacity, saves chip area, reduces manufacturing cost, enhances chip applicability.

It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter How from the point of view of, the present embodiments are to be considered as illustrative and not restrictive.In addition, it will be evident that one word of " comprising " not Exclude other elements and steps, and wording "one" be not excluded for plural number.The multiple element stated in device claim can also To be implemented by one element.The first, the second equal words are used to indicate names, and are not indicated any particular order.