阅读说明：本技术 半导体功率器件 (Semiconductor power device ) 是由 刘伟 刘磊 袁愿林 毛振东 于 2018-05-24 设计创作，主要内容包括：本发明属于半导体功率器件技术领域,具体公开了一种半导体功率器件,包括MOSFET功率器件芯片和IGBT功率器件芯片；所述MOSFET功率器件芯片和所述IGBT功率器件芯片封装在同一个封装体内,其中：所述MOSFET功率器件芯片的源极与所述IGBT功率器件芯片的发射极均接所述封装体的源极引脚；所述MOSFET功率器件芯片的漏极与所述IGBT功率器件芯片的集电极均接所述封装体的漏极引脚；所述MOSFET功率器件芯片的栅极与所述IGBT功率器件芯片的栅极均接所述封装体的栅极引脚。本发明提供的半导体功率器件能够降低半导体功率器件的通态损耗,提高系统效率。(The invention belongs to semiconductor power device technology fields, specifically disclose a kind of semiconductor power device, including MOSFET power device chip and IGBT power device chip；The MOSFET power device chip and the IGBT power device chip are encapsulated in the same packaging body, in which: the emitter of the source electrode of the MOSFET power device chip and the IGBT power device chip connects the source lead of the packaging body；The drain electrode of the MOSFET power device chip and the collector of the IGBT power device chip connect the drain lead of the packaging body；The grid of the grid of the MOSFET power device chip and the IGBT power device chip connects the gate lead of the packaging body.Semiconductor power device provided by the invention can reduce the on-state loss of semiconductor power device, improve system effectiveness.)

1. a kind of semiconductor power device characterized by comprising

MOSFET power device chip and IGBT power device chip；

The MOSFET power device chip and the IGBT power device chip are encapsulated in the same packaging body, in which:

The emitter of the source electrode of the MOSFET power device chip and the IGBT power device chip connects the packaging body Source lead；

The drain electrode of the MOSFET power device chip and the collector of the IGBT power device chip connect the packaging body Drain lead；

The grid of the grid of the MOSFET power device chip and the IGBT power device chip connects the packaging body Gate lead.

2. a kind of semiconductor power device as described in claim 1, which is characterized in that the IGBT power device chip is ditch The IGBT power transistor of slot grid structure.

3. a kind of semiconductor power device as described in claim 1, which is characterized in that the IGBT power device chip is flat The IGBT power transistor of face grid structure.

4. a kind of semiconductor power device as described in claim 1, which is characterized in that the IGBT power device chip has Negative resistance-temperature coefficient.

5. a kind of semiconductor power device as described in claim 1, which is characterized in that the MOSFET power device chip is Vertical double diffused metal-oxide semiconductor field effect transistor.

6. a kind of semiconductor power device as described in claim 1, which is characterized in that the MOSFET power device chip is The power transistor of super-junction structures.

Technical field

The invention belongs to semiconductor power device technology fields, more particularly to a kind of partly leading for low resistance-temperature coefficient Body power device.

Background technique

With the continuous development of new energy and energy-efficient industry, the requirement to the MOSFET power device of low-power consumption is more next Higher, the requirement to the current handling capability of single MOSFET power device chip is also increasing, and MOSFET power device The manageable current density of chip is relatively small.Meanwhile MOSFET power device has bigger resistance-temperature coefficient, The conducting resistance of MOSFET power device increases rapidly as the temperature increases, this significantly increases MOSFET power device On-state loss, reduce system effectiveness.

Summary of the invention

In view of this, the object of the present invention is to provide a kind of semiconductor power device, it is in the prior art to solve The problem of on-state loss of MOSFET power device is high and further promotes MOSFET power device accessible current density.

To reach above-mentioned purpose of the invention, the present invention provides a kind of semiconductor power devices, comprising:

MOSFET power device chip and IGBT power device chip；

The MOSFET power device chip and the IGBT power device chip are encapsulated in the same packaging body, In:

The emitter of the source electrode of the MOSFET power device chip and the IGBT power device chip connects the envelope Fill the source lead of body；

The drain electrode of the MOSFET power device chip and the collector of the IGBT power device chip connect the envelope Fill the drain lead of body；

The grid of the grid of the MOSFET power device chip and the IGBT power device chip connects the encapsulation The gate lead of body.

Optionally, the IGBT power device chip is the IGBT power transistor of trench gate structure.

Optionally, the IGBT power device chip is the IGBT power transistor of planar gate structure.

Optionally, the IGBT power device chip has negative resistance-temperature coefficient.

Optionally, the MOSFET power device chip is vertical double diffused metal-oxide semiconductor field effect crystal Pipe.

Optionally, the MOSFET power device chip is the power transistor of super-junction structures.

A kind of semiconductor power device provided by the invention is by MOSFET power device chip and IGBT power device chip Post package in parallel is in the same packaging body, so that the resistance-temperature coefficient that the resistance of semiconductor power device rises with temperature It is low, it can reduce the on-state loss of semiconductor power device, improve system effectiveness, particularly suitable for high current, high-power And the system under high temperature.

Detailed description of the invention

In order to more clearly illustrate the technical scheme of the exemplary embodiment of the present invention, below to required in description embodiment The attached drawing to be used does a simple introduction.Obviously, the attached drawing introduced is present invention a part of the embodiment to be described Attached drawing, rather than whole attached drawings without creative efforts, may be used also for those of ordinary skill in the art To obtain other attached drawings according to these attached drawings.

Fig. 1 is MOSFET power device chip and IGBT power device in a kind of semiconductor power device provided by the invention Part chip package is in the same intracorporal schematic diagram of internal structure of encapsulation；

Fig. 2 is a kind of schematic equivalent circuit of semiconductor power device provided by the invention；

Fig. 3 is a kind of output characteristic curve figure of MOSFET power device of the prior art；

Fig. 4 is a kind of output characteristic curve figure of IGBT power device of the prior art；

Fig. 5 is a kind of output characteristic curve figure of semiconductor power device provided by the invention.

Specific embodiment

To make the object, technical solutions and advantages of the present invention clearer, below with reference to attached in the embodiment of the present invention Figure, by concrete mode, is fully described by technical solution of the present invention.Obviously, described embodiment is of the invention one Divide embodiment, instead of all the embodiments, based on the embodiment of the present invention, those of ordinary skill in the art are not making wound The every other embodiment that the property made obtains under the premise of working, falls within the scope of protection of the present invention.

It should be appreciated that the terms such as " having " used in the present invention, "comprising" and " comprising " do not allot one Or the presence or addition of a number of other elements or combinations thereof.Figure of description is schematically, to should not limit the scope of the present invention.

Fig. 1 is MOSFET power device chip and IGBT power device in a kind of semiconductor power device provided by the invention Part chip package is merely exemplary in the intracorporal schematic diagram of internal structure of the same encapsulation, Fig. 1 to show MOSFET power device Part chip 50 and IGBT power device chip 60 are encapsulated in the same intracorporal wire bond structure schematic diagram of encapsulation, as shown in Figure 1, this It invents in a kind of semiconductor power device provided: source electrode (pad layers of source electrode) 51 and IGBT of MOSFET power device chip 50 The emitter (pad layers of emitter) 61 of power device chip 60 connects the source lead of packaging body by source metal conducting wire 71 81；The drain electrode of MOSFET power device chip 50 and the collector of IGBT power device chip 60 connect the drain lead of packaging body 82 (drain metal layer of MOSFET power device chip 50 and the collector electrode metal layer of IGBT power device chip 60 are located at The back side of its chip, so that drain lead 82 is directly contacted with the metal framework in packaging body, without routing)； The grid (pad layers of grid) 53 of MOSFET power device chip 50 and the grid (pad layers of grid) of IGBT power device chip 60 63 connect the gate lead 83 of packaging body by gate metal conducting wire 73.

It should be noted that the MOSFET power device chip 50 and IGBT power device chip 60 in Fig. 1 are only examples The structure of property, according to different design requirements, MOSFET power device chip 50 and IGBT power device chip 60 can have Different chip sizes and pressure resistance can also have different pad layer shape or structure.In addition, MOSFET power device chip 50 and IGBT power device chip 60 also can built-in grid resistance.

MOSFET power device chip in a kind of semiconductor power device of the invention can be the function of super-junction structures Rate transistor is also possible to vertical double diffused metal-oxide semiconductor field effect transistor.IGBT power device chip can be with It is the IGBT power transistor of trench gate structure, is also possible to the IGBT power transistor of planar gate structure.The present invention couple The type and structure of MOSFET power device chip and IGBT power device chip are with no restriction.

Fig. 2 is a kind of schematic equivalent circuit of semiconductor power device provided by the invention, as shown in Fig. 2, of the invention The equivalent circuit of semiconductor power device a kind of include MOSFET power device 202 and IGBT power device 101, in which: The source electrode 21 of MOSFET power device 202 connect with the emitter 11 of IGBT power device 101 and accesses source voltage 31； The drain electrode 22 of MOSFET power device 202 connect with the collector 12 of IGBT power device 101 and accesses drain voltage 32； The grid 23 of MOSFET power device 202 connect with the grid 13 of IGBT power device 101 and accesses grid voltage 33.

Optionally, the IGBT power device chip in a kind of semiconductor power device of the invention has negative resistance-temperature It spends coefficient and further decreases semiconductor function to offset the positive resistance-temperature coefficient of MOSFET power device chip as much as possible The on-state loss of rate device at high temperature.

MOSFET power device chip and IGBT power device chip category in a kind of semiconductor power device of the invention In structure in parallel, since IGBT power device chip has lesser even negative resistance-temperature coefficient, this can be reduced Or the positive resistance-temperature coefficient of MOSFET power device chip is offset, so that semiconductor power device of the invention It with low resistance-temperature coefficient, and then can reduce the on-state loss of semiconductor power device at high temperature, improve system effect Rate, particularly suitable for the system under high current, high-power and high temperature.

A kind of semiconductor power device of the invention, when drain-source voltage Vds is smaller, the electric current master of semiconductor power device It to be flowed through from MOSFET power device chip, when drain-source voltage Vds increases, flow through the electric current of IGBT power device chip It will increase, continue to increase with drain-source voltage Vds, the electric current for flowing through IGBT power device chip can be equal to or more than stream Cross the electric current of MOSFET power device chip.Since the electric current of semiconductor power device of the invention is by flowing through MOSFET power The electric current composition of the electric current and IGBT power device chip of device chip, and the manageable electric current of IGBT power device chip Density is commonly greater than the manageable current density of MOSFET power device chip, therefore, semiconductor power proposed by the present invention The manageable current density of device is greater than the manageable current density of conventional MOS FET power device.Meanwhile MOSFET function Rate device chip can realize the more conducting resistances smaller than IGBT power device chip in lower drain-source voltage Vds, Therefore, the saturation conduction pressure more much smaller than traditional IGBT power device may be implemented in semiconductor power device proposed by the present invention Drop.

Fig. 3 is a kind of output characteristic curve figure of MOSFET power device of the prior art, and Fig. 4 is one kind of the prior art The output characteristic curve figure of IGBT power device, Fig. 5 are that a kind of output characteristics of semiconductor power device provided by the invention is bent Line chart.Illustratively, what the MOSFET power device in Fig. 3 was selected is Suzhou Dongwei Semiconductor Co., Ltd OSG60R074HSZ product is tested to obtain output characteristic curve figure, and what the IGBT power device in Fig. 4 was selected is Infineon The output characteristic curve figure that the IGW60N60H product of Co., Ltd is tested, Fig. 5 be by OSG60R074HSZ product and The output characteristic curve figure tested after IGW60N60H product is in parallel.By Fig. 3, Fig. 4 and Fig. 5 it is found that by MOSFET function Semiconductor power device after rate device chip and IGBT power device chip are in parallel, manageable current density are greater than The manageable current density of MOSFET power device, and its saturation conduction pressure drop is less than the saturation conduction pressure of IGBT power device Drop.In addition, MOSFET power device chip and IGBT power device chip are encapsulated in the same packaging body, it can simplify and answer With the design of circuit board.

The above specific embodiment and embodiment are to a kind of technical idea of semiconductor power device proposed by the present invention Specific support, this does not limit the scope of protection of the present invention, it is all according to the technical idea provided by the invention, in this technology Any equivalent variations or equivalent change done on the basis of scheme still fall within the range of technical solution of the present invention protection.

Although the embodiments of the present invention have been disclosed as above, but its is not only in the description and the implementation listed With it can be fully applied to various fields suitable for the present invention, for those skilled in the art, can be easily Realize other modification, therefore without departing from the general concept defined in the claims and the equivalent scope, the present invention is simultaneously unlimited In specific details and legend shown and described herein.