阅读说明：本技术 一种大功率高频高压硅堆反向浪涌试验仪 (Reverse surge tester for high-power high-frequency high-voltage silicon stack ) 是由 许铁华 于 2021-08-17 设计创作，主要内容包括：本发明涉及一种大功率高频高压硅堆反向浪涌试验仪,它包括大功率高压直流电源、大功率高压高速电子开关、单/多脉冲产生控制单元、待测试硅堆、示波器,所述大功率高压高速电子开关是多个电子开关模块串联组成,电子开关模块包括驱动电路和IGBT功率模块,待测试硅堆的正极接地且接地的线路上串接有取样电阻,待测试硅堆的正极还通过信号线连接示波器的信号输入端,信号线的输入接点位于取样电阻的前端。优点是设计巧妙,操作方便,对输入的各种波形的高压脉冲进行可控(包括时间和次数可以任意设定)斩波,从而获得反向浪涌试验所需的大功率高压高频脉冲(冲击电流可以达到安培级或数拾安培)。(The invention relates to a high-power high-frequency high-voltage silicon stack reverse surge tester which comprises a high-power high-voltage direct-current power supply, a high-power high-voltage high-speed electronic switch, a single/multi-pulse generation control unit, a silicon stack to be tested and an oscilloscope. The device has the advantages of ingenious design and convenient operation, and can carry out controllable (including time and times which can be set randomly) chopping on the input high-voltage pulses with various waveforms, thereby obtaining high-power high-voltage high-frequency pulses (the impact current can reach ampere level or several amperes) required by a reverse surge test.)

1. A high-power high-frequency high-voltage silicon stack reverse surge tester is characterized by comprising a high-power high-voltage direct-current power supply, a high-power high-voltage high-speed electronic switch, a single/multi-pulse generation control unit, a silicon stack to be tested and an oscilloscope, wherein the high-power high-voltage high-speed electronic switch is formed by connecting a plurality of electronic switch modules in series, each electronic switch module comprises a driving circuit and an IGBT power module, the output of the driving circuit is connected with a grid G of the IGBT power module, the adjacent electronic switch modules are connected with a collector C of the next IGBT power module through an emitter E of the previous IGBT power module, the collector C of the first IGBT power module is connected with the anode of the high-power high-voltage direct-current power supply, the emitter E of the last IGBT power module is connected with the cathode of the silicon stack to be tested, the anode of the silicon stack to be tested is grounded, and a sampling resistor is connected in series on a grounded line, the positive electrode of the silicon stack to be tested is also connected with the signal input end of the oscilloscope through a signal wire, the input contact of the signal wire is positioned at the front end of the sampling resistor, and the single/multi-pulse generation control unit is connected with all driving circuits of the high-power high-voltage high-speed electronic switch through photoelectric signals.

2. The high-power high-frequency high-voltage silicon stack reverse surge tester as claimed in claim 1, wherein said single/multiple pulse generation control unit comprises a photoelectric emission module, each of said driving circuits is also equipped with a photoelectric receiving module, and the photoelectric emission module sends pulse signals to all the photoelectric receiving modules simultaneously.

3. The high-power high-frequency high-voltage silicon stack reverse surge tester according to claim 1, wherein the high-power high-voltage direct-current power supply is an adjustable high-power high-voltage direct-current power supply.

4. The high-power high-frequency high-voltage silicon stack reverse surge tester according to claim 1, wherein the silicon stack to be tested is a high-frequency high-voltage silicon stack.

5. A test method using the high-power high-frequency high-voltage silicon stack reverse surge tester of any one of the claims 1 to 4 is characterized in that,

firstly, a silicon stack to be tested is connected into the high-power high-frequency high-voltage silicon stack reverse surge tester, the cathode of the silicon stack to be tested is connected with the emitter E of the last IGBT power module of the high-power high-voltage high-speed electronic switch, the anode of the silicon stack to be tested is connected with the signal input end of the oscilloscope through a signal line, and the anode of the silicon stack to be tested is grounded through a sampling resistor;

the high-power high-voltage direct-current power supply is input, a single/multi-pulse generation control unit sends out a pulse signal with a single specified width or a plurality of pulse signals with specified widths, the pulse signals are sent out through a photoelectric emission module, a photoelectric receiving module of each driving circuit in the high-power high-voltage high-speed electronic switch receives the pulse signals and controls the driving circuits through the pulse signals, the output of the driving circuits is connected to a grid electrode of an IGBT (insulated gate bipolar translator), and the connection or disconnection between an emitting electrode and a collecting electrode of the IGBT is controlled, so that the connection/disconnection effect of the circuit in a high-voltage state is achieved;

in each conducting process, the silicon stack to be tested generates reverse surge current, chopping signals are transmitted to the oscilloscope through the sampling resistor, and the large-power high-frequency reverse surge current pulse waveform generated in the reverse surge test is displayed on the oscilloscope.

6. The testing method of the high-power high-frequency high-voltage silicon stack reverse surge tester according to claim 5, wherein the single/multiple pulse generation control unit in the step 2 controls the pulse waveform times of each test by sending one or more times; selecting different pulse widths enables the timing of each pulse.

Technical Field

The invention relates to the field of high-frequency high-voltage silicon stack reverse surge tests, in particular to a high-power high-frequency high-voltage silicon stack reverse surge tester.

Background

At present, a high-voltage silicon stack reverse surge tester can obtain high-power low-frequency (mS level) reverse surge by boosting through a low-frequency high-power transformer; for high-frequency (mu S level) high-power reverse surge, if the similar high-frequency high-power transformer boosting mode is used, the requirement of controlling single or multiple times of surge impact tests is difficult to achieve. If a single sine wave pulse is generated through LC resonance in a high-voltage state or a standard triangular wave is formed by charging a capacitor through a constant current source, high power is achieved when high frequency is achieved (the reason is that the LC value is reduced when the high frequency is needed, and the reduction of LC is difficult to generate high power).

Disclosure of Invention

In order to solve the technical problems, the invention provides a high-power high-frequency high-voltage silicon stack reverse surge tester which solves the problems in multiple aspects of high frequency, high power and random generation of impact pulses in a completely different mode.

The technical scheme of the invention is as follows:

a high-power high-frequency high-voltage silicon stack reverse surge tester comprises a high-power high-voltage direct-current power supply, a high-power high-voltage high-speed electronic switch, a single/multi-pulse generation control unit, a silicon stack to be tested and an oscilloscope, wherein the high-power high-voltage high-speed electronic switch is formed by connecting a plurality of electronic switch modules in series, each electronic switch module comprises a driving circuit and an IGBT power module, the output of the driving circuit is connected with a grid G of the IGBT power module, the adjacent electronic switch modules are connected with a collector C of the next IGBT power module through an emitter E of the last IGBT power module, the collector C of the first IGBT power module is connected with the anode of the high-power high-voltage direct-current power supply, the emitter E of the last IGBT power module is connected with the cathode of the silicon stack to be tested, a sampling resistor is connected in series on a grounded circuit of the anode of the silicon stack to be tested, and the anode of the silicon stack to be tested is also connected with the signal input end of the oscilloscope through a signal line, the input contact of the signal wire is positioned at the front end of the sampling resistor, and the single/multi-pulse generation control unit is connected with all driving circuits of the high-power high-voltage high-speed electronic switch through photoelectric signals.

The single/multiple pulse generation control unit comprises photoelectric emission modules, each driving circuit is also provided with a photoelectric receiving module, and the photoelectric emission modules send pulse signals to all the photoelectric receiving modules at the same time.

The high-power high-voltage direct-current power supply is an adjustable high-power high-voltage direct-current power supply.

The silicon stack to be tested is a high-frequency high-voltage silicon stack.

A test method adopting the high-power high-frequency high-voltage silicon stack reverse surge tester,

1) firstly, a silicon stack to be tested is connected into the high-power high-frequency high-voltage silicon stack reverse surge tester, the cathode of the silicon stack to be tested is connected with the emitter E of the last IGBT power module of the high-power high-voltage high-speed electronic switch, the anode of the silicon stack to be tested is connected with the signal input end of the oscilloscope through a signal line, and the anode of the silicon stack to be tested is grounded through a sampling resistor.

2) The high-power high-voltage direct-current power supply is input, a single/multi-pulse generation control unit sends out a pulse signal with a single specified width or a plurality of pulse signals with specified widths, the pulse signals are sent out through a photoelectric emission module, a photoelectric receiving module of each driving circuit in the high-power high-voltage high-speed electronic switch receives the pulse signals and controls the driving circuits through the pulse signals, the output of the driving circuits is connected to a grid electrode of an IGBT (insulated gate bipolar translator), the connection or disconnection between an emitting electrode and a collecting electrode of the IGBT is controlled, and therefore the connection/disconnection effect of the circuit in a high-voltage state is achieved.

3) After each conduction, the silicon stack to be tested generates reverse surge, a chopping signal is transmitted to an oscilloscope, and the oscilloscope displays the pulse waveform of the high-power high-frequency reverse surge current generated by the reverse surge test.

The single/multiple pulse generation control unit in the step 2 controls the pulse waveform times of each test by sending one or more times; selecting different pulse widths enables the timing of each pulse.

The invention has the advantages of ingenious design and convenient operation, and carries out controllable (including time and times which can be set randomly) chopping on the input high-voltage pulses with various waveforms by adopting the high-power high-voltage high-speed electronic switch manufactured by the high-voltage high-power IGBT module control circuit, thereby obtaining the high-power high-voltage high-frequency pulses (the impact current can reach ampere level or several amperes) required by the reverse surge test.

Drawings

FIG. 1 is a schematic of the present invention.

Detailed Description

Referring to the attached figure 1, the high-power high-frequency high-voltage silicon stack reverse surge tester comprises a high-power high-voltage direct-current power supply 1, a high-power high-voltage high-speed electronic switch 2, a single/multi-pulse generation control unit 3, a silicon stack to be tested 4 and an oscilloscope 5, wherein the high-power high-voltage high-speed electronic switch 2 is formed by connecting a plurality of electronic switch modules in series, each electronic switch module comprises a driving circuit 21 and an IGBT power module 22, the output of the driving circuit 21 is connected with a grid G of the IGBT power module 22, the adjacent electronic switch modules are connected with a collector C of the next IGBT power module 22 through an emitter E of the previous IGBT power module 22, the collector C of the first IGBT power module 22 is connected with the anode of the high-power high-voltage direct-current power supply 1, the emitter E of the last IGBT power module 22 is connected with the cathode of the silicon stack to be tested 4, a sampling resistor 6 is connected in series on a grounded line of the anode of the silicon stack to be tested 4, the positive electrode of the silicon stack 4 to be tested is also connected with the signal input end of the oscilloscope 5 through a signal wire, the input contact of the signal wire is positioned at the front end of the sampling resistor 6, and the single/multi-pulse generation control unit 3 is connected with all the driving circuits 21 of the high-power high-voltage high-speed electronic switch 2 through photoelectric signals.

The single/multiple pulse generation control unit 3 comprises a photoelectric emission module 7, each driving circuit 21 is also provided with a photoelectric receiving module 8, and the photoelectric emission module 7 sends pulse signals to all the photoelectric receiving modules 8 at the same time.

The high-power high-voltage direct-current power supply 1 is an adjustable high-power high-voltage direct-current power supply.

The silicon stack 4 to be tested is a high-frequency high-voltage silicon stack.

A test method adopting the high-power high-frequency high-voltage silicon stack reverse surge tester,

1) firstly, a silicon stack to be tested 4 is connected into the high-power high-frequency high-voltage silicon stack reverse surge tester, the cathode of the silicon stack to be tested 4 is connected with the emitter E of the last IGBT power module 22 of the high-power high-voltage high-speed electronic switch 2, the anode of the silicon stack to be tested 4 is connected with the signal input end of the oscilloscope 5 through a signal line, and the anode of the silicon stack to be tested 4 is grounded through a sampling resistor 6.

2) The high-power high-voltage direct-current power supply 1 is input, a single pulse signal with a specified width or a plurality of pulse signals with specified widths are sent out through the single/multi-pulse generation control unit 3 and are sent out through the photoelectric emission module 7, the photoelectric receiving module 8 of each driving circuit 21 in the high-power high-voltage high-speed electronic switch 2 receives the pulse signals and controls the driving circuit 21 through the pulse signals, the output of the driving circuit 21 is connected to the grid electrode of the IGBT, and the connection or disconnection between the emitting electrode and the collecting electrode of the IGBT is controlled, so that the connection/disconnection effect of the circuit in a high-voltage state is achieved; the single/multiple pulse generation control unit 3 controls the pulse waveform times of each test by sending a single pulse or multiple pulses; selecting different pulse widths enables the timing of each pulse.

3) In each conducting process, the silicon stack to be tested can obtain reverse surge current impact, chopping signals are transmitted to the oscilloscope through the sampling resistor, and the oscilloscope displays the pulse waveform of the high-power high-frequency reverse surge current generated by the obtained reverse surge test.

The high-power high-voltage power supply input by the invention is generated in various ways, and can be direct-current high voltage or alternating-current high voltage (the waveform can be sine wave, triangular wave, rectangular wave and the like). Off-the-shelf high voltage generators are commercially available. The high-voltage high-speed high-power module control circuit (electronic switch) controls the high-voltage high-current module of the high-speed IGBT by a special control signal to control the switching time and times of the high-voltage high-power module. Namely: and controlling the turn-on time and the turn-on times of the electronic switch to meet the impact requirement of the surge test. Control signal circuit of module: a) and generating single or multiple high-frequency control pulses to control the IGBT according to the test requirements. b) The method achieves synchronous control by identifying the rising edge or the zero-crossing signal of the high-voltage source alternating current pulse, or randomly intercepts a certain part of the waveform to form the surge impact pulse output of various shapes of waveforms.