阅读说明：本技术 基于半导体功能材料搭建的矩阵式广谱性物质检测传感器 (Matrix type broad-spectrum substance detection sensor built based on semiconductor functional material ) 是由 颜凯 廖杰 周牡艳 于 2021-08-02 设计创作，主要内容包括：本发明提供了基于半导体功能材料搭建的矩阵式广谱性物质检测传感器,属于传感器技术领域。本基于半导体功能材料搭建的矩阵式广谱性物质检测传感器,包括信号转换板,信号转换板上设置有用于与上位机连接的通信接口,信号转换板上设置有若干个呈矩阵式排列的用于对不同气体进行检测的半导体检测元件,每个半导体检测元件均包括设置于信号转换板正面用于感测气体物质的检测用元件、设置在信号转换板背面的参考用元件和差动放大电路,检测用元件连接于差动放大电路的第一输入端,参考用元件连接于差动放大电路的第二输入端,差动放大电路的输出端作为每个半导体检测元件的输出端与通信接口连接。本发明解决检测单一、检测准确性差的问题。(The invention provides a matrix type broad-spectrum substance detection sensor built based on a semiconductor functional material, and belongs to the technical field of sensors. This matrix broad spectrum material detection sensor based on semiconductor function material is built, including the signal conversion board, be provided with the communication interface that is used for being connected with the host computer on the signal conversion board, be provided with the semiconductor detection component that a plurality of is the matrix and arranges being used for detecting different gas on the signal conversion board, every semiconductor detection component is all including setting up in the detection that the signal conversion board openly is used for sensing gaseous material with the component, set up at the reference component and the differential amplifier circuit at the signal conversion board back, the component is connected in the first input of differential amplifier circuit for the detection, the reference component is connected in the second input of differential amplifier circuit, the output and the communication interface that every semiconductor detection component was regarded as to the output of differential amplifier circuit are connected. The invention solves the problems of single detection and poor detection accuracy.)

1. A matrix type broad-spectrum substance detection sensor built based on semiconductor functional materials comprises a signal conversion board (1), wherein a communication interface (2) used for being connected with an upper computer is arranged on the signal conversion board (1), the matrix type broad-spectrum substance detection sensor is characterized in that a plurality of semiconductor detection elements (3) arranged in a matrix type and used for detecting different gases are arranged on the signal conversion board (1), each semiconductor detection element (3) comprises an element (4) for detection, arranged on the front side of the signal conversion board (1) and used for sensing gas substances, an element (5) for reference and a differential amplification circuit (6) arranged on the back side of the signal conversion board (1), the element (4) for detection is connected to a first input end of the differential amplification circuit (6), the element (5) for reference is connected to a second input end of the differential amplification circuit (6), the output end of the differential amplifying circuit (6) is connected with the communication interface (2) as the output end of each semiconductor detection element (3).

2. The matrix type broad-spectrum substance detection sensor built on the basis of semiconductor functional materials according to claim 1, wherein the detection element (4) is provided with an insulating substrate (7), an electrode (8) and a gas-sensitive layer (9), the electrode (8) is printed on the insulating substrate (7), and the gas-sensitive layer (9) is formed on the insulating substrate (7); the reference element (5) comprises an insulating substrate (7), an electrode (8) and a reference resistor (10), wherein the electrode (8) is printed on the insulating substrate (7) and is connected with the reference resistor (10).

3. The matrix type broad-spectrum substance detection sensor built on the basis of semiconductor functional materials according to claim 2, characterized in that the gas-sensitive layer (9) is one or more of tin oxide-based, zinc oxide-based or iron oxide-based semiconductor materials, and the gas-sensitive layer (9) is formed on the insulating substrate (7) in an ultra-micronized or thin film manner.

4. The matrix type broad-spectrum substance detection sensor built on the basis of semiconductor functional materials according to claim 2 or 3, characterized in that the gas-sensitive layer (9) is further covered with a SiO2 filter layer (13).

5. The matrix type broad-spectrum substance detection sensor constructed based on semiconductor functional materials according to claim 4, wherein the gas sensing layer (9) is covered with a Pd-Pt catalyst layer (14), the Pd-Pt catalyst layer (14) is arranged between the gas sensing layer (9) and a SiO2 filter layer (13), and a diaphragm layer (15) is further arranged between the Pd-Pt catalyst layer (14) and the gas sensing layer (9).

6. The matrix-type broad-spectrum substance detection sensor built on the basis of semiconductor functional materials according to claim 2 or 3, characterized in that the detection element (4) further comprises a first amplifier (11), and the reference element (5) further comprises a second amplifier (12).

7. The matrix broad-spectrum substance detection sensor built on the basis of semiconductor functional materials according to claim 6, characterized in that the impedances of the first amplifier (11) and the second amplifier (12) are different.

Technical Field

The invention belongs to the technical field of sensors, and particularly relates to a matrix type broad-spectrum substance detection sensor built based on semiconductor functional materials.

Background

The sensor is a detection device which can sense the information to be measured and convert the detected information into electric signals or other information in required forms according to a certain rule for output, and is widely applied to the aspects of water conservancy, geology, meteorology, chemical industry, medical treatment and health and the like.

With the increasing of living standard, building decoration is more and more entered into people's life, can improve people's living quality of living through decorating, but what accompanies is that a large amount of poisonous harmful substance that contains in the ornamental material, along with people's increasing of this degree of attention to this day to the requirement of building house ornamentation field to environmental protection material is increasing day by day, and the market is to the demand of all kinds of high sensitivity poisonous harmful gas sensor rapid growth. At present, the gas sensor mainly comprises a semiconductor gas sensor, an electrochemical gas sensor and an infrared gas sensor. The sensors have the problems of poor detection stability, low detection sensitivity, single detection, poor universality and the like, so that the toxic and harmful gas is not accurately and comprehensively detected, and the detection effect is limited.

Disclosure of Invention

In view of the above, an object of the present invention is to provide a matrix-type broad-spectrum substance detection sensor constructed based on semiconductor functional materials, so as to solve the problem in the prior art that the detection effect of the sensor is poor due to single detection and poor detection accuracy.

The purpose of the invention can be realized by the following technical scheme: the utility model provides a matrix broad spectrum nature substance detection sensor based on semiconductor function material is built, includes the signal conversion board, be provided with on the signal conversion board and be used for the communication interface who is connected with the host computer, its characterized in that, be provided with the semiconductor detection element that is used for that the matrix was arranged and detects different gas on the signal conversion board, every semiconductor detection element is all including setting up in the detection that the signal conversion board openly is used for sensing gaseous material with component, setting at the reference at the signal conversion board back with component and differential amplifier circuit, detect with component connection in differential amplifier circuit's first input, connect in differential amplifier circuit's second input with the component for the reference, the output of differential amplifier circuit as every semiconductor detection element with communication interface connects.

In the matrix type broad-spectrum substance detection sensor built based on the semiconductor functional material, the detection element is provided with an insulating substrate, an electrode and a gas-sensitive layer, the electrode is printed on the insulating substrate, and the gas-sensitive layer is formed on the insulating substrate; the reference element has an insulating substrate and an electrode printed on the insulating substrate.

In the matrix broad-spectrum substance detection sensor built based on the semiconductor functional material, the gas-sensitive layer is made of one or more of tin oxide series, zinc oxide series or iron oxide series semiconductor materials, and the gas-sensitive layer is formed on the insulating substrate in an ultra-micronized or thin-film mode during implementation.

In the matrix type broad-spectrum substance detection sensor built based on the semiconductor functional material, the gas sensitive layer is also covered with a SiO2 filter layer. The interference of macromolecular gas such as ethanol and the like on the detection of micromolecular H2 can be filtered out by the SiO2 filter layer.

In the matrix type broad-spectrum substance detection sensor built based on the semiconductor functional material, the gas sensitive layer covers the Pd-Pt catalyst layer, and the Pd-Pt catalyst layer is arranged between the gas sensitive layer and the SiO2 filter layer.

In the matrix type broad-spectrum substance detection sensor built on the basis of the semiconductor functional material, the detection element further comprises a first amplifier, and the reference element further comprises a second amplifier.

In the matrix type broad-spectrum substance detection sensor built on the basis of the semiconductor functional material, the impedance of the first amplifier is different from that of the second amplifier.

Compared with the prior art, the matrix type broad-spectrum substance detection sensor built based on the semiconductor functional material has the following advantages: the invention adopts matrix arrangement, realizes multi-element detection and eliminates the problem of single detection in the prior art; in addition, a reference element is combined with detection, and a differential amplifier is used for eliminating common-mode interference, so that the detection accuracy is improved; meanwhile, the weak signal is amplified, and the detection accuracy of the weak signal is improved.

Drawings

Fig. 1 is a schematic structural diagram of a matrix type broad-spectrum substance detection sensor constructed based on a semiconductor functional material according to a first embodiment.

Fig. 2 is a schematic structural diagram of a three-dimensional viewing angle of a matrix type broad-spectrum substance detection sensor constructed based on a semiconductor functional material according to the first embodiment.

Fig. 3 is a circuit block diagram of a semiconductor detection element according to the first embodiment.

Fig. 4 is a cross-sectional view of a semiconductor detection element according to the first embodiment.

Fig. 5 is a graph showing the relationship between the gas concentration and the resistance value in the detection of the semiconductor detection element according to the first embodiment.

Fig. 6 is a cross-sectional view of a semiconductor detection element according to a second embodiment.

In the figure, 1, a signal conversion plate; 2. a communication interface; 3. a semiconductor detection element; 4. a detection element; 5. a reference element; 6. a differential amplifier circuit; 7. an insulating substrate; 8. an electrode; 9. a gas-sensitive layer; 10. a reference resistance; 11. a first amplifier; 12. a second amplifier; 13. SiO2₂A filter layer; 14. a Pd-Pt catalyst layer; 15. a membrane layer.

Detailed Description

The following are specific embodiments of the present invention and are further described with reference to the drawings, but the present invention is not limited to these embodiments.

The first embodiment is as follows:

as shown in fig. 1-3, the matrix type broad spectrum substance detection sensor built based on semiconductor functional material comprises a signal conversion board 1, a communication interface 2 for connecting with an upper computer is arranged on the signal conversion board 1, and a plurality of semiconductor detection elements 3 are arranged on the signal conversion board 1, the semiconductor detection elements 3 are arranged in a matrix, in this embodiment, the semiconductor detection elements 3 are arranged in a matrix of 3 × 4, and each semiconductor detection element 3 is used for detecting different gases.

Specifically, each of the semiconductor detection elements 3 includes a detection element 4, a reference element 5, and a differential amplifier circuit 6. Wherein, the element 4 for detection is arranged on the front surface of the signal conversion plate 1 to detect the gas substance; the reference element 5 is provided on the opposite side of the signal conversion plate 1, and does not detect a gaseous substance, but serves only as a reference. The differential amplifier circuit 6 is a differential amplifier, the detection element 4 is connected to a first input terminal of the differential amplifier circuit 6, the reference element 5 is connected to a second input terminal of the differential amplifier circuit 6, an output terminal of the differential amplifier circuit 6 is connected to the communication interface 2 as an output terminal of each semiconductor detection element 3, and the differential amplifier is used to cancel an interference signal, thereby achieving the purpose of common-mode interference resistance.

As shown in fig. 4, the detecting element 4 has an insulating substrate 7, two electrodes 8 and a gas sensing layer 9, the electrodes 8 are printed on the insulating substrate 7, the gas sensing layers 9 are formed on the insulating substrate 7, the two electrodes 8 are respectively disposed on two sides of the gas sensing layer 9, one end of each electrode 8 is connected to the gas sensing layer 9, and the other end of each electrode 8 is connected to the signal conversion plate 1. The differential amplifier circuit 6 is etched in the signal conversion plate 1, and a lead is also etched in the signal conversion plate 1, and the electrode 8 is connected to the differential amplifier via the lead. Similarly, the reference element 5 has an insulating substrate 7, electrodes 8 and a reference resistor 10, the two electrodes 8 are connected to both ends of the reference resistor 10, and the electrodes 8 are connected to a differential amplifier via a wire.

In order to improve the detection sensitivity of the semiconductor detection element 3, a first amplifier 11 is connected to the detection element 4, a second amplifier 12 is connected to the reference element 5, the first amplifier 11 and the second amplifier 12 have different impedances, the first amplifier 11 and the second amplifier 12 are similarly disposed in the signal conversion plate 1, the electrode 8 of the detection element 4 is connected to the first amplifier 11 through a wire and then to a first input terminal of a differential amplifier, and the electrode 8 of the reference element 5 is connected to the second amplifier 12 through a wire and then to a second input terminal of the differential amplifier.

The gas sensing layer 9 is one or more of tin oxide semiconductor materials, zinc oxide semiconductor materials or iron oxide semiconductor materials, and the gas sensing layer 9 is formed on the insulating substrate 7 in an ultrafine particle or thin film manner. In this embodiment, the gas sensing layer 9 is described by taking a zinc oxide-based ZnO film as an example, and the SiO2 filter layer 13 is covered on the ZnO film. The interference of macromolecular gas such as ethanol and the like on the detection of micromolecular H2 can be filtered out by the SiO2 filtering layer 13. The gas-sensitive layer 9 using the ZnO film layer has characteristics as shown in fig. 5, and the gas concentration and the resistance value are substantially in a straight line.

Example two:

as shown in fig. 6, the present embodiment is a further improvement based on the first embodiment, and the difference between the present embodiment and the first embodiment is that: a Pd — Pt catalyst layer 14 is further covered on the gas sensing layer 9, the Pd — Pt catalyst layer 14 is disposed between the gas sensing layer 9 and the SiO2 filter layer 13, and a separator layer 15 is further disposed between the Pd — Pt catalyst layer 14 and the gas sensing layer 9. In this structure, since the barrier layer 15 is provided between the ZnO film layer of semiconductor material and the Pd — Pt catalyst layer 14, the resistance value in the air increases by about one order of magnitude, and as a result, the sensitivity of the element to detect gas increases, because Zn is excessive in ZnO, Zn ions adsorb oxygen in the air, and adsorption of oxygen in the atmosphere is promoted by the catalyst, so that the grain boundary barrier increases, and the resistance value R of the air in the element increases. When the reducing gas is brought into contact with the alloy at this time, the grain boundary barrier is lowered and the conductivity is increased. Particularly, after the catalyst is added, the catalyst is filled between the semiconductor crystal grains to reduce the contact potential barrier, thereby further improving the gas-sensitive effect.

The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the invention as defined in the appended claims.