阅读说明：本技术 传感器中的寄生不敏感采样 (Parasitic insensitive sampling in a sensor ) 是由 维什努·斯里尼瓦桑 伊翁·奥普里什 凯特·巴尔格罗夫 于 2020-02-25 设计创作，主要内容包括：描述了用于减轻传感器中随时间变化的损害的方法和装置。详细描述了这种方法和装置对于面临由于水滴引起的随时间变化的寄生电容的压力传感器的应用。还描述了所公开的装置中采用的自动归零技术的益处。(Methods and apparatus for mitigating time-varying damage in a sensor are described. The application of this method and apparatus to pressure sensors that are subject to time-varying parasitic capacitance due to water droplets is described in detail. The benefits of the auto-zero technique employed in the disclosed apparatus are also described.)

1. A sensor system, comprising:

a sensor comprising a sensing capacitor having a variable sensing capacitance; and

a readout integrated circuit including an analog-to-digital converter (ADC) having an ADC input connected to the sensing capacitor,

wherein:

a variable parasitic capacitance can be coupled to the ADC input; and

when the sensor senses an input pressure, the variable sensing capacitance is modulated, thereby generating one or more ADC output signals corresponding to the input pressure.

2. The sensor system of claim 1, wherein the sensing capacitor is connected in series with the ADC input.

3. The sensor system of claim 1, wherein the ADC comprises a sigma-delta modulator.

4. A sensor system according to claim 3, wherein the sigma-delta modulator is a multi-stage noise-shaping (MASH) modulator comprising one or more integrators interconnected with one or more comparators.

5. The sensor system of claim 4, further comprising a decimation filter coupled to the sigma-delta modulator.

6. The sensor system of claim 1, wherein the sensor further comprises an offset capacitor operatively charged or discharged out of phase with respect to the sensing capacitor.

7. The sensor system of claim 6, wherein the sensor further comprises a feedback capacitor, and wherein the offset capacitor is configured to center a change in the sensing capacitor to a center of a full range of the ADC, the full range of the ADC set by the feedback capacitor.

8. The sensor system of claim 1, wherein an auto-zero or chopping technique is used to reduce the effect of the variable parasitic capacitance on the one or more ADC output signals.

9. The sensor system of claim 7, further comprising an integrator comprising an operational amplifier and an integrating capacitor, the operational amplifier input being the ADC input.

10. The sensor system of claim 9, configured to receive a plurality of reference voltages and further comprising a switching device controlled by a plurality of clock signals to connect/disconnect the sensing capacitor, the offset capacitor, and the feedback capacitor to/from respective ones of the plurality of reference voltages.

11. The sensor system of claim 10, wherein the plurality of clock signals comprises a clock signal generated based on the one or more ADC output signals.

12. The sensor system of claim 11, wherein:

in the charging stage:

the switching device is configured such that the plurality of reference voltages are sampled to store charge across the sensing capacitor, the offset capacitor, and the feedback capacitor; and is

In the integration phase:

transferring a combination of the charge stored on the sensing capacitor, the offset capacitor, and the feedback capacitor during the charging phase to the integration capacitor, thereby generating an integrator output signal corresponding to the input pressure.

13. The sensor system of claim 12, wherein undesired charge due to the variable parasitic capacitance is sampled prior to the charging phase and compensated for while generating the integrator output signal.

14. The sensor system of claim 12, wherein the plurality of clock signals have a clock period substantially less than a time during which the variable parasitic capacitance varies by 1 pF.

15. The sensor system of claim 12, wherein the plurality of clock signals have a clock rate in the range of hundreds of KHz, and the variable parasitic capacitance varies in the range of tens of pF and has a rate of change in the range of tens pF/msec.

16. The sensor system of claim 10, wherein the switching device comprises a Metal Oxide Semiconductor Field Effect (MOSFET) transistor.

17. The sensor system of claim 1, wherein the sensor is a MEMS sensor.

18. The sensor system of claim 1, further comprising a gel material configured to transfer the sensed pressure to the readout integrated circuit.

19. The sensor system of claim 18, wherein the sensor is connected to the readout integrated circuit via a bond wire exposed to the gel material.

20. A method of measuring pressure, comprising:

providing a sensing capacitor having a variable sensing capacitance;

providing a sensing circuit having an integrating capacitor, wherein a variable parasitic capacitance can be generated across a sensing circuit input;

during a charging phase, sampling a first reference voltage to store a first charge across the sensing capacitor; and is

In an integration phase, the first charge is transferred to the integration capacitor, thereby generating a readout circuit output signal corresponding to an input pressure.

21. The method of claim 20, further comprising sampling the readout circuit input to capture undesired charge due to the variable parasitic capacitance and compensating for the undesired charge during the integration phase prior to the charging phase.

22. The method of claim 21, further comprising:

providing a bias capacitor;

configuring the offset capacitor to center a change in the sensing capacitor to a center of a full scale of the readout integrated circuit;

sampling a second reference voltage to store a second charge across the offset capacitor during the charging phase; and is

Transferring the second charge to the integration capacitor during the integration phase.

23. The method of claim 22, further comprising:

providing a feedback capacitor configured to set a full range of the readout circuit;

sampling, during the charging phase, the first reference voltage and the second reference voltage during a set time interval to store a third charge across the offset capacitor; and

transferring the third charge to the integration capacitor during the integration phase.

24. The method of claim 23, wherein the set time interval is defined based on the readout circuit output signal.

25. The method of claim 24, wherein the readout circuit further comprises one or more integrators interconnected with one or more comparators.

26. A method of detecting the presence of a water droplet located on a pressure sensor using the method of claim 20, the method comprising comparing a measurement of the readout circuit output signal to a set threshold to detect the presence or absence of a water droplet.

(1) Field of the invention

The present disclosure relates to parasitic insensitive sensors, and more particularly to methods and apparatus for sampling sensors having time varying parasitics.

(2) Background of the invention

In general, the performance of the electronic circuitry implementing the sensor may be degraded by environmental damage to the sensor. Such damage may be time-varying, thus presenting more design challenges. By way of example, capacitive pressure sensors may be affected by time-varying parasitic capacitances created by water droplets that appear on such pressure sensors when deployed. Solutions are needed to help mitigate the negative impact of time-varying damage on the performance of the circuitry implementing the sensor. The methods and apparatus described in this disclosure address this problem and provide solutions to it.

Description of concepts and terms used throughout the disclosure

In the following, some concepts that are later employed by the methods and apparatuses presented in the present disclosure are defined and described.

a) Switched capacitor circuit

Throughout this disclosure, the term "switched capacitor circuit" will be used to describe an electronic circuit that includes a capacitor and a switch, wherein charge moves into and out of the capacitor when the switch is open or closed. Fig. 1A shows an exemplary switched capacitor circuit, in which three switches control operation: switch S1 and switch S3 connect the left plate of capacitor C1 to Vin and ground, respectively, and S2 provides unity gain feedback. In the charging phase, S1 and S2 are turned on and S3Open, producing a voltage equal to Vin across C1. This is because the inverting input appears as a virtual ground. During the integration phase, S1 and S2 turn off and S3 turns on, pulling node A to ground. During this phase, and as shown in fig. 1B, the Operational Amplifier (OA) input differential voltage, and thus the voltage across C1, is driven to zero by negative feedback of C2. The charge stored on C1 during the charging phase must then be transferred to C2, resulting in a charge equal toTo output of (c). In other words, Vout changes within 1 clock cycle (corresponding to the 2 phases described above)

b) Automatic zeroing technology

Throughout this disclosure, the term "auto-zero" is used to describe techniques used in electronic circuits to eliminate possible offsets or noise present in such circuits. An example of an offset is an input voltage offset of an operational amplifier. Fig. 2A-2B illustrate this technique, where Vos represents the offset voltage at the input of the operational amplifier. In the first phase, switches S1 and S2 are closed and switch S3 is open, meaning Vout — Vos. In other words, the offset voltage is stored in the capacitor Caz. In the second phase, switch S3 is closed and switches S1 and S2 are open. In the second phase, the output is available. For an amplifier with a finite Direct Current (DC) gain of a, the residual offset can be calculated as Vos/(a + 1). For most operational amplifiers, the gain a is a large number, and therefore this technique is mostly used to cancel the residual offset.

c) Sigma-delta analog-to-digital converter (ADC) and multi-stage noise shaping (MASH) modulator

Throughout this disclosure, the term sigma-delta ADC is used to describe ADCs that operate based on the sigma-delta modulation concept. Fig. 3 shows a block diagram of a typical sigma-delta ADC. Unlike more conventional ADCs, sigma-delta ADCs are oversampling converters that operate at a sampling rate greater than the nyquist frequency of the input signal. Sigma-delta ADCs are used primarily to implement high resolution and cost effective ADCs for applications such as consumer and professional audio, communication systems, sensors and precision measurement devices.

Throughout this disclosure, the term "MASH modulator" (where the acronym stands for multi-level noise shaping) is used to describe an electronic circuit designed by cascading low-order sigma-delta modulators. The MASH modulator has the benefit of overcoming some of the instability problems inherent in higher order sigma-delta modulators. Examples of typical MASH modulators known in the art are MASH modulators of order 2-1, 2-2, 2-1-1 or higher. For example, this would also apply to other topologies of delta-sigma modulators, such as CIFF (chain of integrators with weighted feedforward coefficients) with higher order (e.g., 3 rd and 4 th) modulators.

Background

Disclosure of Invention

According to a first aspect of the present disclosure, there is provided a sensor system comprising: a sensor comprising a sensing capacitor having a variable sensing capacitance; and a readout integrated circuit comprising an analog-to-digital converter (ADC) having an ADC input connected to the sensing capacitor, wherein: a variable parasitic capacitance can be coupled to the ADC input; and modulating the variable sensing capacitance when the sensor senses the input pressure, thereby generating one or more ADC output signals corresponding to the input pressure.

According to a second aspect of the present disclosure, a method of measuring pressure is described, the method comprising: providing a sensing capacitor having a variable sensing capacitance; providing a sensing circuit having an integrating capacitor, wherein a variable parasitic capacitance can be generated across a sensing circuit input; during a charging phase, sampling a first reference voltage to store a first charge across a sensing capacitor; and transferring the first charge to an integrating capacitor during an integration phase, thereby generating a readout circuit output signal corresponding to the input pressure.

Other aspects of the disclosure can be found in the specification, claims and drawings of the present application.

Drawings

Fig. 1A to 1B show a prior art switched capacitor circuit.

Fig. 2A-2B show prior art electronic circuits illustrating an auto-zero technique.

Fig. 3 shows a prior art sigma-delta analog-to-digital converter (ADC).

Fig. 4 illustrates a sensor system according to an embodiment of the present disclosure.

Fig. 5A shows a MASH modulator.

Fig. 5B shows a second order sigma-delta modulator connected to a decimation filter.

Fig. 6 shows an electronic circuit according to an embodiment of the present disclosure.

Fig. 7A-7C illustrate timing diagrams according to further embodiments of the present disclosure.

Fig. 8A shows a cross section of a pressure sensor according to the teachings of the present disclosure.

FIG. 8B shows the pressure sensor of FIG. 8A with a water droplet on top.

Fig. 9A-9B show graphs illustrating mitigation of the effect of time-varying parasitic capacitance on an electronic circuit in accordance with the teachings of the present disclosure.

Fig. 10 shows the rapid onset of a water droplet and the various stages of slow dissipation of a water droplet located on a pressure sensor.

Detailed Description

Fig. 4 shows a sensor system (400) according to an embodiment of the present disclosure. The sensor system (400) comprises a micro-electro-mechanical system (MEMS) sensor (410), the micro-electro-mechanical system (MEMS) sensor (410) being connected to a readout integrated circuit (401) comprising an ADC (420). The MEMS sensor (410) includes a sense terminal, a base terminal, and a protection terminal, represented by letters S, B and G, respectively. The time-varying capacitance of the MEMS sensor (410) is determined by a variable capacitor (C) connected across a terminal (S, B)_S) Parasitic capacitor (C) across terminal (B, G)_BG) And a parasitic capacitor (C) across the terminal (S, G)_SG) And (4) showing. According to an embodiment of the present disclosure, the MEMS sensor (410) is a variable capacitor (C) in which the pressure is modulated_S) Capacitive pressure ofA sensor. As will be described in detail later, the capacitor (C) is then measured by the ADC (420)_S) And thus generate a corresponding system output (430).

Referring to fig. 4-5, and in accordance with an embodiment of the present disclosure, the ADC (420) includes a MASH modulator (500) as shown in fig. 5. According to an embodiment of the present disclosure, the MASH modulator (500) may be a 2-1MASH modulator comprising integrators (510, 511, 512) and comparators (520, 521). As also shown in FIG. 5, the letters (-a1, -a2, -a3, b1, b2, and b3) represent the gains of their corresponding paths. The integrator (510) includes an integrator output node (530). According to an embodiment of the present disclosure, the MASH modulator (500) of fig. 5 and thus the ADC (420) of fig. 4 are configured to receive an input voltage (Vin) and generate two ADC outputs (d)₁、d₀). According to further embodiments of the present disclosure, the outputs (d) of the two comparators₁、d₀) May be part of the system output (430) of fig. 4. To complete the system, the output of the MASH modulator is typically followed by a decimation filter. In most implementations, a 1-bit data stream (d)₁、d₀) Will be further processed by a decimation filter, which is typically implemented in the digital part of the system. The output of the decimation filter can be considered the final output of the ADC (430). In other embodiments, d₀Can be ignored and only d is output₁Processed by a decimation filter in the digital part. In such a case, and as shown in FIG. 5B, the modulator is reconfigured to be a second order sigma-delta modulator (501) rather than a 2-1MASH modulator. Also shown in fig. 5B, the output d of the second order sigma-delta modulator (501)₁Is used as an input to a decimation filter (502). In processing input (d)₁) Thereafter, the decimation filter (502) generates an output (Vout). According to an embodiment of the present disclosure, the decimation filter output (Vout) may be a 24-bit output. Therefore, the output data rate is slow due to the decimation process. According to further embodiments of the present disclosure, the 24-bit output of the decimation filter (502) may be at a rate of 32Hz, 64Hz, or 128 Hz.

Figure 6 shows an analog front end comprising a sigma-delta modulator(641) The analog front end (641) of the sigma-delta modulator is connected to the MEMS sensor (642). The analog front end (641) includes an integrator (610). According to an embodiment of the present disclosure, integrator (610) is an exemplary implementation of integrator (510) of fig. 5. The capacitor frame (642) includes a capacitor (C) connected to the sense terminal, the base terminal and the protection terminal (S, B, G)_S、C_BG、C_SG) The sense, base and guard terminals (S, B, G) are similar to their respective counterparts as shown in fig. 4. In other words, the capacitor (C)_S、C_BG、C_SG) And the terminal (S, B, G) may be an integral part of the MEMS sensor (410). In this example, a MEMS sensor having a particular configuration (B, S, G) is used. However, other sensors may be used. For example, the sensors may be MEMS or other types, the sensors may be pressure or temperature or acceleration type, and the sensors may be configured differently. The analog front end (641) further comprises an offset capacitor (C)_os) A feedback capacitor (C)_dac) And a plurality of switches (S1, S1 '… … S4, S4', S5, S6, S7). According to an embodiment of the present disclosure, the switch (S1, S1 '… … S4, S4', S5, S6, S7) may include a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) switch. The state of such switches is controlled by a clock having various phases, each phase comprising a pulse stream of logic 1 and logic zero. Such clocks are used to manage the timing when certain capacitors sample the input voltage and how they transfer the stored charge to the integrating capacitor (as will be described in detail later). Referring to FIG. 6, each switch and corresponding control clock are shown using the following convention: for each switch, the name of the clock controlling the switch is set below the switch. For example, the term "Φ is shown below₁"the switch is made by a clock (phi)₁) Controlled so as to be at the time of clock (phi)₁) Logic 1, the switch is closed, and when the clock (phi)₁) At logic zero, the switch is open.

With further reference to fig. 6, each clock is represented by a greek letter (Φ) each having an index. The term "dd" as used in the index denotes delay. AsIllustratively, the switch (S1) is operated as a clock (phi)₁) Delayed version of clock (phi)_1dd) And (5) controlling. In addition, a bar used in the naming of the clock indicates inversion. By way of example, a clockIs a clock (phi)_1dd) An inverted version of (a). In other words, when the clock (phi)_1dd) At logic one, the clockAt logic zero and vice versa, when the clock (phi)_1dd) At logic zero, the clockAt a logical one. Each of the switches (S3, S3 ', S4, S4') is controlled by a clock generated by multiplying two pulse streams. As an example, as shown in fig. 6 and with reference to fig. 5, the switch (S3) is controlled by the clock (Φ)_1ddd₁) Control, wherein the term "phi_1ddd₁"is to indicate a clock (phi)₁dd) and output comparator (d) representing fig. 5₁) The product of pulse streams of (a). With continued reference to FIG. 6, the integrator (610) includes switches (S5 and S6), an integrating capacitor (C)_int) And an Operational Amplifier (OA) (660), the Operational Amplifier (OA) (660) having a first input node (670) and a second input node (671). According to an embodiment of the present disclosure, the second input node (671) may be connected to a reference voltage (V)_refp). According to further embodiments of the present disclosure, as shown in fig. 6, reference voltage (V) is_refn) May be ground. According to further embodiments of the present disclosure, as shown in fig. 6, reference voltage (V) is_refn) And (3) can be used.

Referring to fig. 4-6, analog front end (641) is an exemplary implementation of the electronics block (541) of fig. 5, and they both essentially represent the analog front end of ADC (420) of fig. 4; such an analog front end is received as a result of sensing the pressure to be measured by the sensing capacitor (C) of fig. 4 and 6_s) The resulting analog signal. This is achieved byFurthermore, the connection point (630) of fig. 6 is a counterpart of the integrator output node (530) of fig. 5, both showing the interconnection between the integrator (610) of fig. 6 (or the integrator (510) of fig. 5) and the rest of the modulator (500) of fig. 5.

The electronic circuit (600) of fig. 6 is essentially a switched capacitor circuit in which the input voltage is sampled during a charging phase and the sampled data is integrated during an integration phase following the charging phase. According to an embodiment of the present disclosure, an electronic circuit (600) is configured to receive a reference voltage (V)_refp、V_refn). According to further embodiments of the present disclosure, the reference voltage (V)_refp、V_refn) Positive and negative voltages, respectively. Embodiments according to the present disclosure are also envisaged, wherein the reference voltage (V)_refn) Is ground.

More specifically, the electronic circuit (600) of fig. 6 may be considered to be the sensing capacitor (C)_s) Relative to a reference capacitance (C)_dac) In which the same reference voltage (V)_refpAnd V_refn) For providing charge during the sampling phase. The amount of trapped charge depends on the value of the sensing capacitor (Cs), which in turn depends on the pressure. Performance of an ADC relative to a reference voltage V by implementing the analog front end of a sigma-delta modulator as a proportional comparison of capacitors_refpAnd V_refnBecomes more robust to the first order. Offset capacitance (C)_OS) Is generally configured with respect to the sensing capacitor (C)_s) Charged or discharged out of phase. According to an embodiment of the present disclosure, the capacitor (C) is offset_OS) For sensing capacitance (C)_S) Is centered (or aligned) to the center of the full range of the ADC, which is measured by the feedback capacitance (C)_dac) And (4) setting. In typical embodiments, the full range of available ADCs may be, for example, by a feedback (or reference) capacitor (C)_dac) Half of the true full range implied.

Fig. 7 shows a timing diagram of various clocks that control the state of the switches of the electronic circuit (600). For purposes of description, and hereinafter, reference (V) is assumed without loss of generality_refn) Is the ground.During the sampling or charging phase, the clock (phi)_1dd) At one and thus, the switch (S1) is closed and the capacitor (C) is sensed_s) Is connected to (V) at one side_refp) And on the other side to the reference node of the operational amplifier (670). Thus, the capacitor (Cs) is charged to Q_S＝Cs x(V_refp-V_refn). At this stage, input-dependent op-amp noise (flicker noise) and offset are also captured. This is achieved by means of the phases phi₁And (5) closing S7. At the same sampling clock ([ phi ])_1dd) Stage, capture of C in a similar manner but with opposite polarity_osDue to C_osIs connected to V_refnAnd V_ref. This achieves a full range shift that is correctly achieved at the end of phase 2.

In the integration phase, the clock ([ phi ])_1dd) Is at zero, and thus, switch (S1) is open and switch (S2) is closed. This forces storage at the sensing capacitor (C)_s) Moves towards the first input node (670) of the OA (660) and forces the charge stored on the sensing capacitor (C)_s) To the integrating capacitor (C)_int). To enable this charge transfer to be completed, switch S5 and switch S6 are closed during this clock phase. As can be seen in FIG. 7, the AND sensing capacitor (C)_s) In contrast, a capacitor (C)_os) In reverse order at V_refn(e.g., ground) and a reference voltage (V)_refp) To switch between. In other words, and during the charging phase, the switch (S2) is closed, and thus the bias capacitor bottom plate is charged to ground. During the integration phase, the switches (S1, S2) are open, and the equivalent charge is (C) based on conservation of charge_s-C_os)。(V_refp–V_refn) Thus transferring to the integrating capacitor (C)_int)。

With respect to the feedback capacitor (C)_dac) In relation to the sensing capacitor (C)_s) Or an offset capacitor (C)_os) The description of (1) similarly performs storage and transfer of charge. However, the control and feedback capacitor (C)_dac) The associated switches (S3, S3 ', S4, S4') are clocked differently and depend on the comparator output (d 1).

Fig. 7A-7C illustrate timing diagrams associated with the electronic circuit (600) of fig. 6. Fig. 7A shows a high level timing diagram. Fig. 7B to 7C show more detailed timing charts in enlargement on the regions (71, 72) of the timing chart of fig. 6, respectively. Referring to fig. 6 and 7A, during both the charging phase and the integration phase, depending on the clock (Φ)₁，Ф₂) State and output DAC (d)₁) Feedback capacitor (C)_dac) Can be connected to a first reference voltage (V)_refp) Or a second reference voltage (V)_refn). Integrated charge-related data (d)₁) Providing quantized negative feedback, which ensures that the output bit stream of the comparator accurately reflects the sensed capacitance (C)_S) Average value of (a).

According to an embodiment of the present disclosure, an offset capacitor (C)_os) Can be selected as the sensing capacitor (C)_s) About half of the range of variation, centering such variation.

With further reference to fig. 7A-7B, and similar to that previously described with respect to fig. 2A-2B, an auto-zero technique is employed to minimize the negative effects of impairments such as OA offsets or flicker noise, as well as any other low frequency impairments that may be present on the input side of OA (660). This is performed by appropriately controlling the switch (S7) according to the timing chart shown in fig. 7A to 7C. The switch is closed (S7) before the charging phase begins and, therefore, the low frequency noise present at the input of the OA (660) is sampled. This is followed by the start of the charging phase and then the integration phase. Referring back to fig. 6, during the integration phase, substantially equal voltages are maintained at the first and second input nodes (670, 671) of the OA (660), thereby compensating for the negative effects of low frequency parasitics at the first input (670) of the OA (660). Similar to that described with respect to fig. 2A-2B, in practice, the sampling noise is divided by the open loop gain of OA and is therefore reduced to a negligible amount. This mechanism will also approximately cancel out any slowly varying parasitic capacitance, such as C connected to node 670_P1. Such parasitic capacitances may also arise due to various obstacles in the environment surrounding the sensitive MEMS structure. Described auto-zeroing techniqueThe technique is essentially to have a filter transfer function such as (1- (z)^-1) High-pass filtering mechanisms that filter various impairments, such as slowly varying capacitance (C)_P1) Or DC offset and low frequency noise of the operational amplifier (660). In accordance with embodiments of the present disclosure, chopping techniques in differential topologies/circuits may be used instead of auto-zeroing to reduce the effects of damage as described above.

As previously mentioned, the damage associated with the pressure sensor may be time varying. An example of a source of such damage is water droplets that occasionally sit on the pressure sensor during a measurement. In the following, more details are described regarding damage caused by water droplets and methods and apparatus for mitigating the negative effects of such damage.

Fig. 8A shows a cross section of a pressure sensor (800) comprising a body (890), a MEMS sensor (810) and a water-resistant gel (880). The water resistant gel (880) allows it to faithfully convey air pressure from outside the body (890) to the MEMS (810) sensor, while protecting the MEMS sensor and ASIC (820) from water or other external liquids to which the pressure sensor may be exposed. The MEMS sensor (810) is connected to the integrated circuit (820) by a first bond wire (811). As also shown in fig. 8, the integrated circuit (820) is also connected to the substrate (881) via bond wires (812). The pressure to be measured is transferred to the integrated circuit (820) through the waterproof gel (880). According to an embodiment of the present disclosure, the bonding wires (811, 812) may be exposed to the waterproof gel (880). According to further embodiments of the present disclosure, the integrated circuit (820) may include the ADC (420) of fig. 4. Embodiments according to the present disclosure are also contemplated in which the pressure sensor (800) is free of water resistant gel, but other methods of providing water resistance to the ASIC are used.

With further reference to the water drop scenario, fig. 8B shows the pressure sensor (800) of fig. 8A, where there is a drop of water (or liquid) (895) on top of the transparent gel (880). The surface tension of the water (or liquid) may cause the water (or liquid) to expand as shown. However, water droplets may also be present only partially on the surface of the gel. The water (or liquid) droplets (895) have a significantly different dielectric than air. This influencesThe value of the parasitic capacitance sensed by the very sensitive analog front end of the modulator is measured. The presence of water/liquid in the vicinity of the gel and MEMS can be modeled as various parasitic capacitances/impairments-C as shown in fig. 6_P1、C_P2And C_P3. Typical values of such parasitic capacitances are generally the same as the MEMS sensing capacitance C_SChanges with pressure are comparable, resulting in large pressure excursions, i.e. errors in the pressure measurement. It should be mentioned that the term water or liquid is not limited to water only. It may be saline or other various liquids or residues. Water is used as an example because of its time-varying nature as it appears and then evaporates.

Referring to the capacitance block (642) of fig. 6, the damage described due to the presence of water may be caused by the first, second and third parasitic capacitors (C)_p1、C_p2、C_p3) And (4) showing. According to the embodiment of the present disclosure, the second parasitic capacitor and the third parasitic capacitor (C)_p2、C_p3) In comparison with the negative effects of the first parasitic capacitor (C)_p1) May have a substantially greater negative impact on sensor performance. Parasitic capacitance (C)_p1) The change value of (2) destroys the direction to C_INTInjected charge and C being measured_SIntroduces large errors in the values of (a) and thus affects the pressure measurement. On the other hand, parasitic capacitance C_p2Between ASIC ground and backplane ground and does not affect the self-integration to C_intC of (A)_SThe signal charge of (1). Parasitic capacitance (C)_p3) Between the reference buffer and ground. The capacitor is charged and discharged every clock cycle, but does not affect the current from the integrated to C_intC of (A)_SThe signal charge of (1).

Referring to fig. 6, and in accordance with an embodiment of the present disclosure, the first parasitic capacitor (C) is compared to various timings at which various circuits based on its ADC (420) function_pl) With a time-varying capacitance representing low frequency impairments.

Referring to fig. 5 to 6, and by way of example and not limitation, with the sigma-delta modulator (500) of fig. 5 or the first electronic circuit of fig. 6 (500)600) The associated sampling frequency may be hundreds of KHz, which is equivalent to a sampling period on the order of microseconds. Continuing with the same example, the variation of the parasitic capacitors may be in the range of a few picofarads per millisecond to a 10pF variation. At C_SThis may be in accordance with C over the entire pressure operating range_SThe variations themselves are equally large.

By having a parasitic capacitor (C) significantly larger than that due to water droplets_pl) The auto-zero function as previously described with respect to the analog front end (641) of fig. 6 can counter and overcome water drop-induced damage in the same manner as other low frequency noise/damage, such as flicker noise or OA offset, is eliminated. According to the teachings of the present disclosure, parasitic capacitance due to the presence of water droplets may be reduced by a factor of the order of several thousand.

Fig. 9 shows graphs (901, 902) according to an embodiment of the present disclosure. Graph (902) represents the parasitic capacitor (C) of FIG. 6 as a function of time_p1) A change in (c). Graph (901) shows the change in system output (430) of the ADC (420) of fig. 4 as a function of time. As shown in fig. 9, the sensor system output (430) at the first voltage (V1) reacts to a sudden change in parasitic capacitance from zero to Cp 1. The system output (430) first increases to a peak voltage (Vp) and then falls back to a second voltage (V2) substantially close to the first voltage (V1), the small difference being due to a quadratic effect. Here, V1, V2, and Vp are referred to as voltages, but they are only at the ADC output (430) with the C being measured_SThe equivalent digital code, C, directly related to the capacitance of_SIs proportional to the sensed pressure. Referring to fig. 4, 6, and 8A-8B, one skilled in the art will appreciate that when the system output (430) is stable, water droplets are still present and stick to the gel. In other words, charge is constantly removed from the first input node (670) of the OA (660) by the water droplets. However, by implementing an auto-zero mechanism according to the teachings of the present disclosure, the described charge removal is opposed by insisting injecting charge into the input node (670) to maintain the voltage at that node equal to the voltage at the other input of OA (660), which is ground. This is to alleviate the water drop associated with parasitic capacitanceThe manner of damage. Without this mitigation, the voltage would vary from V1 to a larger value VP that could be as large as 1000-7000 times_NEWAnd the voltage will remain at that level until the water droplet (or liquid) dissipates. Referring to fig. 9, the presence or absence of water droplets on the pressure sensor may be detected based on a comparison of the ADC output amplitude as shown by graph (901) to a set desired amplitude threshold in accordance with the teachings of the present disclosure.

With respect to the water droplet problem described above, and in accordance with the teachings of the present disclosure, as represented by diagram (1000) of fig. 10, the dissipation of the water droplets is a very slow phenomenon. Referring back to FIG. 8A, graph (1000) depicts a graph showing parasitic capacitor (C) as a function of time_p1) A graph of the change in capacitance of (a). A cross-section of the pressure sensor (800) of fig. 8B is shown from left to right illustrating different states of a water droplet (890) located on the water-resistant gel (880) of fig. 8B. Two side arrows (1001b, 1002b, 1003b, 1004b) are used to display the correspondence of each of the illustrated cross sections with the respective graph portion (1001a, 1002a, 1003a, 1004 a). From left to right, such graph portions represent the following: 1) at time T ═ 0, a water droplet is on the pressure sensor gel, 2) the amount of water decreases, 3) the contact of the water droplet with the transparent gel decreases, and 4) the water disappears or separates from the sensor body. As mentioned previously, and as can be seen from the graph (1000) of fig. 10, complete dissipation of water occurs at a much slower rate than the rate at which the parasitic capacitance caused by water droplets increases to its maximum. Thus, in view of the foregoing, the auto-zero mechanism mitigates parasitic capacitance generated during the life cycle of the corresponding water droplet.

The parasitic capacitance caused by water droplets in applications using pressure sensors is merely an example used to describe some aspects of the teachings of the present disclosure. Those skilled in the art will appreciate that the teachings of the present disclosure apply similarly to sensors other than pressure sensors and to different time-varying impairments due to sources other than water droplets, without departing from the spirit and scope of the present invention.

As used in this disclosure, the term "MOSFET" means any Field Effect Transistor (FET) having an insulated gate and including metals or metal-like, insulator, and semiconductor structures. The term "metal" or "metal-like" includes at least one conductive material (e.g., aluminum, copper, or other metal, or highly doped polysilicon, graphene, or other electrical conductor), "insulator" includes at least one insulating material (e.g., silicon oxide or other dielectric material), and "semiconductor" includes at least one semiconductor material.

As one of ordinary skill in the art will readily appreciate, various embodiments of the present invention may be implemented to meet various specifications. Unless otherwise noted above, selection of appropriate component values is a matter of design choice, and various embodiments of the present invention may be implemented in any suitable IC technology (including but not limited to MOSFET structures) or in hybrid or discrete circuit form. Integrated circuit embodiments may be fabricated using any suitable substrate and process, including but not limited to standard bulk silicon, silicon-on-insulator (SOI), and silicon-on-sapphire (SOS). Unless otherwise stated above, the invention may be implemented in other transistor technologies such as bipolar, GaAs HBT, GaN HEMT, GaAs pHEMT, and MESFET technologies. However, the inventive concepts described above are particularly useful for SOI-based manufacturing processes (including SOS) and for manufacturing processes having similar characteristics. The fabrication of CMOS processes on SOI or SOS enables circuits with low power consumption, the ability to withstand high power signals during operation due to the FET stack, good linearity, and high frequency operation (i.e., radio frequencies up to and beyond 50 GHz). Monolithic IC implementations are particularly useful because parasitic capacitances can often be kept low (or kept at a minimum, consistent across all cells, allowing parasitic capacitances to be compensated) through careful design.

The voltage levels may be adjusted and/or the voltages and/or logic signal polarities reversed according to particular specifications and/or implementation techniques (e.g., NMOS, PMOS, or CMOS and enhancement mode or depletion mode transistor devices). Component voltage, current, and power handling capabilities can be adjusted as needed, for example by adjusting device size, "stacking" components (particularly FETs) in series to withstand greater voltages, and/or using multiple components in parallel to handle greater currents. Additional circuit components can be added to enhance the capabilities of the disclosed circuits and/or provide additional functionality without significantly altering the functionality of the disclosed circuits.

A number of embodiments of the invention have been described. It will be understood that various modifications may be made without departing from the spirit and scope of the invention. For example, some of the steps described above may be order independent, and thus may be performed in a different order than that described. Furthermore, some of the above steps may be optional. Various activities described with respect to the methods identified above can be executed in repetitive, serial, or parallel fashion.

It should be understood that the foregoing description is intended to illustrate and not to limit the scope of the invention, which is defined by the scope of the appended claims, and that other embodiments are within the scope of the claims. (Note that any reference in parentheses to claim elements is intended to refer to such elements easily and does not itself indicate a particular required ordering or enumeration of elements; furthermore, such references may be reused in dependent claims to refer to additional elements without being considered a sequence of references that begin to conflict with one another).