阅读说明：本技术 用于检测压力、料位、密度、温度、质量和流量的传感器 (Sensor for detecting pressure, level, density, temperature, mass and flow ) 是由 亚历山大·维甘德 于 2020-04-14 设计创作，主要内容包括：本发明涉及一种用于检测压力、料位、密度、温度、质量和/或流量的传感器(30),其中至少一个中央传感器构件(3)借助纳米线(28)耦联至另一构件(2,4),并且其中在此所述传感器构件(3)被加固、固定和/或电接触。(The invention relates to a sensor (30) for detecting pressure, fill level, density, temperature, mass and/or flow, wherein at least one central sensor component (3) is coupled to a further component (2, 4) by means of a nanowire (28), and wherein the sensor component (3) is reinforced, fixed and/or electrically contacted.)

1. A sensor (30) for detecting pressure, fill level, density, temperature, mass and/or flow, having:

sensor means (3) for detecting physical quantities of pressure, level, density, temperature, mass and/or flow,

-having a thin bending-sensitive section (3A), wherein the bending-sensitive section (3A) is provided with an electronic evaluation device (11) on the side facing away from the working medium, and when a pressure is applied on the side facing the working medium, an elastic bending takes place in the direction of the side facing away from the working medium, which elastic bending can be measured electronically by means of the evaluation device (11), and wherein the bending-sensitive section (3A) is located at least predominantly in a central region of the sensor member (3), and

-having a coupling section (3C) which extends around the bend-sensitive section (3A) in a circumferential manner and which is designed for coupling to at least one further component (2, 4) on one side or on both sides, wherein the coupling section (3C) is at least partially reinforced, fixed or contacted by the further component (2, 4) during coupling, wherein

-for coupling to the coupling section (3C) of the sensor component (3) and/or to the further component (2, 4), at least sections of nanowires (28) are provided.

2. The sensor (30) of claim 1, wherein

The nanowires (28) are applied directly to the coupling section (3C) or to the coupling section of the further component (2, 4) on one or both sides or in strips as intermediate bonding layers.

3. The sensor (30) of claim 1 or 2, wherein

The further component (4) is a sensor carrier (4) which faces the working medium during operation thereof and which comprises in particular a working input (5) having a thread (19) for the sealed introduction into a working opening, wherein the end of the working input (5) facing away from the working opening is closed by means of the sensor component (3).

4. The sensor (30) of any one of the preceding claims,

wherein the bending-sensitive section (3A) and the encircling coupling section (3C) form a sensor disk which is reinforced by a completely encircling ring section (3B).

5. Sensor (30) according to claim 3 or 4, wherein

The sensor component (3) is mounted between the sensor carrier (4) and the further disk-shaped component (2) on both sides in the region of the coupling section (3C) using nanowires (28) as a sandwich composite.

6. The sensor (30) of any of claims 3 to 5, wherein

The sensor carrier (4) is formed from brass, stainless steel or an alloy, and the sensor component (3) is formed from ceramic or silicon oxide ceramic.

7. The sensor (30) of any of claims 3 to 6, wherein

The nanowire connection for the sensor carrier (4) has a fixed and/or sealed and/or electrical contacting function.

8. The sensor (30) of any of the preceding claims, wherein

The bending-sensitive section (3A) comprises a first electrically conductive layer (11), and the disk-shaped second component (2) which is designed as an upper part of the sensor comprises a second electrically conductive layer (12), wherein the bending and/or strain of the bending-sensitive section (3A) is capacitively detectable on both electrically conductive layers (11, 12).

9. The sensor (30) of any of the preceding claims, wherein

The bending-sensitive section (3A) is provided at least in sections with a resistance layer (20) and/or a strain measuring resistor and can detect the bending and/or the strain or the temperature present there resistively.

10. The sensor (30) of any of claims 5 to 9, wherein

The sensor carrier (4) is designed as a coupled second disk-shaped component and carries a circuit board which comprises an electronic assembly (10) for the electronic evaluation of bending and/or strain, wherein the nanowire (28) makes electrical contact and mechanical fixation to the sensor component (3) and the sensor carrier (4) via a coupling section (3C).

11. The sensor (30) of any one of the preceding claims,

wherein the further component (2) carries a circuit board and the electronic components (10) arranged on the circuit board are fixed and contacted by means of the nano wires (28).

12. The sensor (30) of any of claims 3 to 11, wherein

The sensor carrier (4) and/or the disk-shaped second component (2) which is designed as a sensor upper part are provided with electrically conductive layers (11, 12) which are shaped in a circular, punctiform, annular, semicircular or segmented manner.

13. The sensor (30) of any of the preceding claims, wherein

The bending-sensitive section (3A) is located in the center of the sensor component (3) and has a thickness of 0.1mm to 0.8 mm.

14. The sensor (30) of any of the preceding claims, wherein

The nanowires (28) are applied on one or both sides and are formed of copper, tin, silver, nickel, gold or stainless steel.

15. The sensor (30) of any of the preceding claims, wherein

A molded interface (18) is provided for measuring differential pressure.

Technical Field

The invention relates to a sensor for detecting pressure, fill level, density, temperature, mass and/or flow.

Background

Generic sensors for detecting pressure, fill level, density, temperature, mass or flow are generally known from the prior art.

Disclosure of Invention

The invention is based on the object of proposing an improved sensor for detecting pressure, fill level, density, temperature, mass and/or flow rate compared to the prior art.

This object is achieved according to the invention by means of a sensor having the features given in claim 1.

Possible embodiments of the invention are the subject matter of the dependent claims.

The sensor according to the invention for detecting pressure, fill level, density, temperature, mass and/or flow comprises a sensor member for detecting a physical quantity of pressure, fill level, density, temperature, mass and/or flow. The sensor component comprises a thin, bending-sensitive section which is provided with an electronic evaluation device on the side facing away from the working medium, that is to say the side which is designed to be arranged away from the working medium during operation of the sensor component, and which, when a pressure is applied to the side facing the working medium which is designed to be arranged toward the working medium during operation of the sensor component, elastically bends in the direction of the side facing away from the working medium. The bending is measurable electronically by means of an evaluation device. The bending-sensitive section is at least predominantly located in the central region of the sensor component. The sensor component furthermore comprises a coupling section which extends around the bend-sensitive section in a circumferential manner and which is designed for coupling to at least one further component on one side or on both sides. During coupling, the coupling sections are at least partially reinforced, fixed or contacted by further components. For coupling, nanowires, also referred to as nanowires, are arranged at least in sections on the coupling section of the sensor component and/or on the further component.

The sensor thus has a configuration in which the sensor component or sensor assembly is connected to the second component by means of a nanowire. Here, the nanowire permanently fixes the two components to one another. In addition, the connection is electrically conductive and is also pressure-tight, so that in particular a pressure-tight connection to the working interface or the sensor carrier can be established. Such a connection by means of the nanowires can be realized particularly simply and reliably.

In one possible embodiment of the sensor, the nanowires are applied directly on one or both sides to the coupling section or the coupling section of the further component or are applied in strips as intermediate bonding layers. The nanowires thus applied enable a particularly stable connection. When applied on one side, locking occurs in the surface of the respective further component, for example cleaned and/or roughened, when pressed together.

In a further possible embodiment of the sensor, the further component is a sensor carrier which faces the working medium during operation thereof, which sensor carrier comprises in particular a threaded working input for the sealed introduction into the working opening, wherein the end of the working input facing away from the working opening is closed by the sensor component. This embodiment makes it possible to achieve a simple, reliable and media-tight arrangement of the sensor in the device or in the operating area.

In a further possible embodiment of the sensor, the bending-sensitive section and the encircling coupling section form a sensor disk which is reinforced by a completely encircling ring section. The sensor disk is therefore mechanically particularly stable and at the same time designed for precise and sensitive detection.

In a further possible embodiment of the sensor, the sensor component is mounted between the sensor carrier and the further disk-shaped component on both sides of the region of the coupling section using the nanowires as a sandwich composite, so that it is particularly compact and mechanically stable.

In a further possible embodiment of the sensor, the sensor carrier is formed from brass, stainless steel or an alloy, and the sensor component is formed from ceramic or silicon oxide ceramic. This material combination enables a simple and reliable connection between the sensor carrier and the sensor component by means of the nano wire.

In a further possible embodiment of the sensor, the nanowire connection to the sensor carrier has a fixed and/or sealed and/or electrical contact function. By means of the nanowire connection, the sensor carrier can be adapted to the requirements of the respective application in a particularly simple and reliable manner.

In a further possible embodiment of the sensor, the bending-sensitive section comprises a first electrically conductive layer and the second disk-shaped component, which is designed as an upper part of the sensor, comprises a second electrically conductive layer, wherein the bending and/or the strain of the bending-sensitive section can be detected capacitively at the two electrically conductive layers. Such capacitive detection is particularly reliable, accurate and robust.

In a further possible embodiment of the sensor, the bending-sensitive section is provided at least in sections with a resistive layer and/or a strain measuring resistor, and the bending and/or the strain or the temperature present there can be detected resistively. Resistive detection is also particularly reliable, accurate and robust.

In a further possible embodiment of the sensor, the sensor carrier is designed as a coupled second disk-shaped component and carries a circuit board which comprises an electronic assembly for the electronic evaluation of bending and/or strain, wherein the nanowires produce an electrical contact and a mechanical fixing of the sensor component and the sensor carrier via the coupling section. This construction is very compact, so that the sensor can be constructed in a particularly compact manner. The fixing and contacting by means of the nanowires can be established very reliably, robustly and simply.

In a further possible embodiment of the sensor, the further component carries a circuit board, wherein electronic components arranged on the circuit board are fixed and in contact with the nanowires. This embodiment also makes it possible to achieve an extremely compact design of the sensor. The fixing and contacting by means of the nanowires can be established very reliably, robustly and simply.

In a further possible embodiment of the sensor, the sensor carrier and/or the disk-shaped second component, which is designed as the sensor upper part, are provided with an electrically conductive layer which is shaped in a circular, punctiform, annular, semicircular or segmented manner. The layer is provided for the capacitive detection of bending and/or strain of a bending-sensitive section, wherein the selection of the respective shape is made in particular in dependence on the application of the sensor, so that the requirements of the application can be adapted precisely.

In a further possible embodiment of the sensor, the bending-sensitive section is located in the center of the sensor component and has a thickness of 0.1mm to 0.8 mm. A thickness within the stated range leads to a particularly great stability of the bending-sensitive sections while at the same time being very flexible.

In a further possible embodiment of the sensor, the nanowires are applied on one or both sides and are formed from copper, tin, silver, nickel, gold or stainless steel. This embodiment makes it possible to achieve a simple and reliable connection between the sensor carrier and the sensor component by means of the nano wire, in particular when the sensor carrier is formed from brass, stainless steel or an alloy and the sensor component is formed from a ceramic or a silicon oxide ceramic.

In a further possible embodiment of the sensor, a molded second interface is provided for measuring the differential pressure. The interface can in particular allow access to the interior of the sensor on the side of the sensor component facing away from the working input in order to measure the differential pressure between the two sides of the sensor component. The flow rate can be detected via the pressure difference, for example, also as a measurement variable at the tube cover.

Drawings

Possible embodiments of the invention are explained in detail below with reference to the drawings.

Shown here are:

figures 1A to 1F schematically show the carrier in different stages of manufacturing when nanowires are manufactured on the carrier,

figure 2 schematically shows a perspective view of the sensor member in half section and a second disc-shaped member removed therefrom,

FIG. 3 shows a cross-sectional view of a sensor for detecting pressure, fill level, density, temperature, mass and/or flow, an

Fig. 4A to 4D schematically show top views of differently shaped conductive layers.

Parts that correspond to each other are provided with the same reference numerals throughout the figures.

Detailed Description

Fig. 1A to 1F schematically show a carrier 32 according to the prior art in different stages of production during the production of a nanowire 28, also referred to as a nanowire, on a carrier 32.

The term nanowire 28 or nanowire as used hereinafter may also refer herein to an aggregate of a plurality of fibers.

In this case, according to fig. 1A, a so-called Target (Target)21 is first applied to a carrier 32.

The structure 22 is subsequently applied to the target 21 in a photolithographic process according to fig. 1B.

An initial layer 23 is then applied on the structure 22 according to fig. 1C, on which initial layer the nanowires 28 are produced.

According to fig. 1D, a structural layer 24, for example in the form of a film, having a recess 26 is applied to the starting layer 23, wherein an electrolyte 25 is applied to the structural layer 24, for example by means of a sponge.

The hollow portion 26 has, for example, a cylindrical shape with a diameter of 0.5 μm to 3 μm.

When a voltage is applied, a nanowire structure is generated in the void 26.

Subsequently, the structural layer 24 is removed according to fig. 1E, for example by means of an acid a, whereby the nanowires 28 are exposed as shown in fig. 1F.

For further processing, the nanowires 28 are covered, for example, to protect against external influences.

This technique can also be derived in principle from the documents US 2011/0039459 or US 2016/0143153.

Fig. 2 shows a perspective view of one possible embodiment of the sensor member 3 in half section and one possible embodiment of the second disc-shaped member 2, also referred to as sensor upper part, removed from the sensor member 3.

The sensor component 3 is designed in particular for detecting pressure, but can also detect other physical quantities, such as fill level, density, temperature, mass and/or flow rate.

The sensor component 3 has a thin, bending-sensitive section 3A for this purpose. When the pressure is applied, the section 3A is arched, wherein the maximum value of the arching is in particular in the middle. The bending-sensitive section 3A is bent in this case, in particular, toward the side facing away from the working medium.

The side facing away from the work is provided with an electronic evaluation device 11. The evaluation device 11 can be, for example, a (first) electrically conductive layer 11 which, when arched, approaches a further layer 12 of the second component 2, which is in particular of disc-shaped design. In this case, in particular the capacitance between two layers or surfaces changes. The change can be measured and can then be used as a signal for pressure and camber.

The loading pressure is, for example, in the low pressure range of 25mbar to 100 bar. The bending-sensitive section 3A, also referred to as a lamella, is formed here, for example, from a ceramic material with a thickness of 0.1mm to 0.8 mm. However, metal foils are also conceivable, which can be subjected to pressures of up to 8000bar, for example.

When a particularly strip-shaped resistance, for example a strain-measuring resistance and/or a resistive layer 20, is applied to the bending-sensitive section 3A, the elastic bending of the central bending-sensitive section 3A can be measured by means of the evaluation circuit 31 via a change in capacitance or also via a change in resistance.

The bending-sensitive section 3A is located in particular in a central region of the sensor component 3, which is shown here as a circle. The sensor member 3 can however also have any other shape, for example as a cuboid or cube.

The coupling section 3C extends in particular around the bend-sensitive section 3A, i.e. the web, in a circumferential manner, so that a disk results, which has the bend-sensitive section 3A on the inside. For example, the outer region is reinforced on at least one side, so that the outer region does not move or bend when subjected to pressure.

On one side, the reinforcement can be achieved by means of a pipe section or by means of a completely circumferential ring section 3B, which ring section 3B is connected to the coupling section 3C. The connection between the ring section 3B and the coupling section 3C is made, for example, by means of a nanowire layer 15A.

On the other hand, the reinforcement at the coupling section 3C can be brought about by adding the disk-shaped second component 2 from above. The second component 2 may comprise a second planar electrode for capacitive measurement.

During the coupling, the sensor composite, in particular the bending-sensitive section 3A, that is to say the disk-shaped wafer, is provided with the nanowires 28 in the coupling section 3C and is pressed, for example, with the second component 2. As a result, coupling and fixing and at the same time also stiffening occur at the edges of the bending-sensitive section 3A.

The nanowires 28 are applied here, for example, circumferentially to the coupling section 3C or alternatively also only in sections 28A, 28B, 28C. The holding force here amounts, for example, to 5MPa to 50MPa, for example 10MPa to 30 MPa. The nanowires 28 here have a thickness of 0.3 μm to 4.0 μm, for example, when the length is 10 μm to 800 μm, for example.

The nanowire 28 is applied directly on one side or on both sides to the coupling section 3C of the sensor member 3 or the coupling section of the second member 2. Alternatively, the application can also take place in strips as intermediate bonding layers and/or as annular bands.

When applied on one side, a lock in the surface of the respective other member occurs when the sensor member 3 and the second member 2 are pressed together. To optimize the locking, the surface is previously cleaned and/or roughened, for example.

In one possible embodiment, the disk-shaped second component 2 is designed as a circuit board or as an electronic assembly 10 comprising such a circuit board and carrying the evaluation circuit 31, the conductor tracks and/or the contact points 17. The assembly 10 can here likewise be mounted via a nanowire connection.

A cross-sectional view of one possible embodiment of the sensor 30 is shown in fig. 3.

The sensor 30 comprises a housing 1, a sensor component 3, which is formed, for example, according to the illustration in fig. 2, a second component 2, which is, for example, disc-shaped and formed according to the illustration in fig. 2, and a further component 4, which is formed as a sensor carrier 4.

The sensor component 3 and the disk-shaped second component 2 mounted thereon are arranged on the sensor carrier 4, the sensor carrier 4 being oriented in the mounted state.

The sensor carrier 4 comprises a working input 5 with a thread 19. The sensor carrier 4 can be introduced into the working opening in a sealed manner by means of the thread 19. The end of the working input 5 facing away from the working opening is closed by the sensor component 3.

The sensor carrier 4 is formed, for example, from brass and the sensor component 3 is fixed in a sealed manner on the sensor carrier 4 by means of a circular nanowire layer 15B. The sensor component 3 with the bending-sensitive section 3A and the encircling coupling section 3C is then not only reinforced by the completely encircling annular section 3B, but is also additionally stabilized by the coupling to the sensor carrier 4.

In particular, the sensor component 3 can however also be provided with nanowire layers 15A, 15B on both sides in the region of the coupling section 3C, so that the reinforcement is carried downwards towards the ring section 3B and the second disk-shaped component 2 is carried upwards as a sandwich composite. In this configuration, the nanowire 28 is applied, for example, on both sides on the coupling section 3C.

The sensor carrier 4, in contrast to being made of brass, can also be made of stainless steel or any other suitable metallic material or any other suitable metallic alloy for connection to the sensor component 3, which is made of ceramic or silicon oxide ceramic, for example, via the nano wires 28. The nanowires 28 may here be formed of copper, tin or stainless steel.

When connected in the form of a sandwich composite with the upper, disk-shaped second component 2, the nanowire connection to the sensor component 3 optionally forms an electrical connection in addition to the fixing and/or sealing effect, in order to electrically connect the capacitive layer or the resistance, for example the strain measuring resistance, with the evaluation circuit 31.

For example, the section 3A sensitive to this bending is provided with a first electrically conductive layer 11 and the second disc-shaped member 2 is provided with a second electrically conductive layer 12. When the central, bending-sensitive section 3A is bent, strained, a pressure or arching change can then be detected capacitively via the two conductive layers 11, 12.

In one possible embodiment, the intermediate layer 14 or the liquid is provided as a dielectric in order to improve the capacitive effect. It is also possible for the layers 11, 12 to be provided with specific nanowires 28 at a specific distance and to be interdigitated with one another in a finger-like manner, in order thus to improve the capacitive effect also in terms of measurement.

In one possible embodiment, the second element, which is disk-shaped, has contact points 13, which are designed as plated-through holes, with the electronic components 10 of the evaluation circuit 31. The plated-through holes can thus directly connect one side to the other via the nanowires 28 or contact components of the evaluation circuit 31, which are thus connected to the conductive layers 11, 12 of the capacitive sensor circuit.

The plug-in connector 6 is led out of the housing 1 enclosing the sensor member 3 and the second member 2. The contact 7 of the connector 6 can also be connected internally to a connector or a substrate 8, which is connected to the evaluation circuit 31 via a multi-conductor cable 9.

A passage to the interior of the sensor 30 and to the other side of the sensor component 3 can furthermore be realized via the interface 18 molded at the housing 1 in order to measure the differential pressure. The flow rate can thus also be detected as a measurement variable at the tube cover, for example, via the pressure difference.

Fig. 4A to 4D show top views of the conductive layers 11, 12 for capacitive measurement.

The layers 11, 12 can be shaped in the form of a surface circle, a dot, a ring, a semicircle or a segment.

The invention is not limited to the embodiments described in detail above. The invention may be modified within the scope of the following claims. Likewise, the various aspects of the dependent claims may be combined with each other.

List of reference numerals:

1 casing

2 structural member

3 sensor component

3A section

3B Ring segment

3C coupling section

4 component, sensor carrier

5 working input end

6 plug-in connector

7 contact part

8 base plate

9 electric cable

10 electronic assembly

11 evaluation of devices, layers

12 layers of

13 contact point

14 intermediate layer

15A nanowire layer

15B nanowire layer

18 interface

19 screw thread

20 resistive layer

21 target

22 structure

23 starting layer

24 structural layer

25 electrolyte

26 hollow part

28 nanowire

Section 28A

28B section

28C section

30 sensor

31 evaluation circuit

32 bearing part

A acid