阅读说明：本技术 基于MXene纳米片优化的钙钛矿量子点光电探测器及其制备方法 (Perovskite quantum dot photoelectric detector based on MXene nanosheet optimization and preparation method thereof ) 是由 李明钰 吕海飞 文晓艳 刘思思 李灏 于 2021-08-18 设计创作，主要内容包括：一种基于MXene纳米片优化的钙钛矿量子点光电探测器及其制备方法,涉及光电探测器领域。该基于MXene纳米片优化的钙钛矿量子点光电探测器的制备方法包括以下步骤：将碳化钛纳米材料和CsPbBr-(3)量子点溶液混合得到混合液；将混合液旋涂到玻璃基片表面,对旋涂有混合液的玻璃基片进行退火,重复上述步骤多次得到光敏层；对具有光敏层的玻璃基片镀金得到电极。本申请提供的基于MXene纳米片优化的钙钛矿量子点光电探测器具有稳定性强、光电流强度和光响应度高的优点,能够在环境中长期保存。(A perovskite quantum dot photoelectric detector based on MXene nanosheet optimization and a preparation method thereof relate to the field of photoelectric detectors. The preparation method of the perovskite quantum dot photoelectric detector based on MXene nanosheet optimization comprises the following steps: mixing titanium carbide nano material and CsPbBr 3 Mixing the quantum dot solution to obtain a mixed solution; spin-coating the mixed solution on the surface of a glass substrate, annealing the glass substrate coated with the mixed solution in a spin-coating manner, and repeating the steps for multiple times to obtain a photosensitive layer; and gold plating the glass substrate with the photosensitive layer to obtain the electrode. The perovskite quantum dot photoelectric detector based on MXene nanosheet optimization that this application provided has that stability is strong, photocurrent intensity and light responsivity are high advantage, can preserve for a long time in the environment.)

1. A perovskite quantum dot photoelectric detector based on MXene nanosheet optimization is characterized by comprising the following steps:

mixing titanium carbide nano material and CsPbBr₃Mixing the quantum dot solution to obtain a mixed solution;

spin-coating the mixed solution on the surface of a glass substrate, annealing the glass substrate coated with the mixed solution in a spin-coating manner, and repeating the steps for multiple times to obtain a photosensitive layer;

and gold plating the glass substrate with the photosensitive layer to obtain the electrode.

2. The perovskite quantum dot photodetector optimized based on MXene nanosheets of claim 1, wherein the CsPbBr is₃The preparation method of the quantum dot solution comprises the following steps: mixing Cs⁺The precursor is added to a mixture of 2-propanol and n-hexane, followed by stirring and addition of Pb²⁺Centrifuging the precursor to obtain CsPbBr₃Quantum dots of CsPbBr₃Quantum dots are dispersed in toluene to obtain CsPbBr₃A quantum dot solution.

3. The perovskite quantum dot photoelectric detector optimized based on MXene nanosheets of claim 1, wherein the titanium carbide nanomaterial is prepared by a method comprising: mixing Ti₃AlC₂Mixing the powder and lithium fluoride, adding the mixture into a hydrochloric acid solution, stirring for full reaction, filtering, washing with deionized water until the pH value is more than or equal to 6 to obtain a black precipitate, dispersing the black precipitate into a mixed solution of dimethyl sulfoxide and deionized water, stirring for more than 24 hours, filtering, washing with deionized water to obtain a plurality of layers of titanium carbide, dispersing the plurality of layers of titanium carbide into deionized water, performing ultrasonic treatment in an argon environment, centrifuging, and performing vacuum drying to obtain the titanium carbide nano material.

4. The perovskite quantum dot photoelectric detector optimized based on MXene nanosheets of claim 1, wherein the glass substrate surface is cleaned with ultraviolet light prior to being coated with the mixed liquid.

5. The perovskite quantum dot photoelectric detector optimized based on MXene nanosheets of claim 1, wherein the glass substrate is rotated at a speed of 800-.

6. The perovskite quantum dot photoelectric detector optimized based on MXene nanosheets of claim 1, wherein the annealing temperature is 100-150 ℃ and the annealing time is 0.5-2 min.

7. The perovskite quantum dot photoelectric detector optimized based on MXene nanosheets of claim 1, wherein the above steps are repeated 8-10 times or more.

8. The perovskite quantum dot photodetector optimized based on MXene nanosheets of claim 1, wherein the CsPbBr is₃The mass concentration of the quantum dot solution is 50-100 mg/mL; the titanium carbide nano material and the CsPbBr₃The mass-volume ratio of the quantum dot solution during mixing is 0.05-0.5 mg: 1 ml.

9. The perovskite quantum dot photoelectric detector based on MXene nanosheet optimization is characterized by being prepared by the preparation method of the perovskite quantum dot photoelectric detector based on MXene nanosheet optimization according to any one of claims 1 to 8.

Technical Field

The application relates to the field of photoelectric detectors, in particular to a perovskite quantum dot photoelectric detector based on MXene nanosheet optimization and a preparation method thereof.

Background

The lead-based perovskite serving as a novel semiconductor photoelectric material has excellent photoelectric properties, has extremely high light absorption coefficient, tunable band gap, long carrier service life, long diffusion length and high carrier mobility, and the excellent characteristics enable the lead-based perovskite material to be greatly applied to the field of photoelectric devices such as solar cells, photoelectric detectors, semiconductor lasers, light emitting diodes and the like.

Organic-inorganic perovskites (e.g. MAPbX)₃X ═ Cl, Br, I) has excellent photoelectric properties, but its performance is generally affected by ambient temperature and humidity, and most of such perovskites need to be synthesized and used under the protection of inert gas to maintain their long-term stability, resulting in some limitations in their use. Inorganic perovskite (CsPbBr)₃) The temperature stability of the quantum dot is higher than that of other organic perovskite quantum dots, but the high trap density and low carrier mobility of the quantum dot thin film limit the application of the quantum dot thin film in the field of photoelectric detectors.

Disclosure of Invention

The perovskite quantum dot photoelectric detector based on MXene nanosheet optimization and the preparation method thereof can be used for obtaining the perovskite quantum dot photoelectric detector with high stability, high photocurrent intensity and high photoresponse in a large scale.

The embodiment of the application is realized as follows:

the embodiment of the application provides a preparation method of a perovskite quantum dot photoelectric detector based on MXene nanosheet optimization, which comprises the following steps:

mixing titanium carbide nano material and CsPbBr₃Mixing the quantum dot solution to obtain a mixed solution;

spin-coating the mixed solution on the surface of a glass substrate, annealing the glass substrate coated with the mixed solution in a spin-coating manner, and repeating the steps for multiple times to obtain a photosensitive layer;

and gold plating the glass substrate with the photosensitive layer to obtain the electrode.

In some alternative implementationsIn the scheme, CsPbBr₃The preparation method of the quantum dot solution comprises the following steps: mixing Cs⁺The precursor is added to a mixture of 2-propanol and n-hexane, followed by stirring and addition of Pb²⁺Centrifuging the precursor to obtain CsPbBr₃Quantum dots, CsPbBr₃Dispersing the quantum dots into toluene to obtain CsPbBr₃A quantum dot solution.

In some alternative embodiments, the titanium carbide nanomaterial is prepared by: mixing Ti₃AlC₂Mixing the powder and lithium fluoride, adding the mixture into a hydrochloric acid solution, stirring for full reaction, filtering, washing with deionized water until the pH is more than or equal to 6 to obtain a black precipitate, dispersing the black precipitate into a mixed solution of dimethyl sulfoxide and deionized water, stirring for more than 24 hours, filtering, washing with deionized water to obtain a plurality of layers of titanium carbide, dispersing the plurality of layers of titanium carbide into the deionized water, performing ultrasonic treatment in an argon environment, centrifuging, and performing vacuum drying to obtain the titanium carbide nano material.

In some alternative embodiments, the surface of the glass substrate is cleaned using ultraviolet light before the mixed solution is applied to the surface of the glass substrate.

In some alternative embodiments, when the mixed solution is coated on the surface of the glass substrate by spin coating, the glass substrate is rotated at a speed of 800-.

In some alternative embodiments, the annealing temperature is 100-150 ℃ and the annealing time is 0.5-2 min.

In some alternative embodiments, titanium carbide nanomaterials and CsPbBr are combined₃And (3) coating the mixed solution obtained by mixing the quantum dot solution on the surface of the glass substrate, annealing the glass substrate coated with the mixed solution, and repeating the steps for more than 8-10 times.

In some alternative embodiments, CsPbBr₃The mass concentration of the quantum dot solution is 50-100 mg/mL; titanium carbide nano material and CsPbBr₃The mass-volume ratio of the quantum dot solution during mixing is 0.05-0.5 mg: 1 ml.

The application also provides an MXene nanosheet optimization-based perovskite quantum dot photoelectric detector which is prepared by using the MXene nanosheet optimization-based perovskite quantum dot photoelectric detector preparation method.

The beneficial effect of this application is: the preparation method of the perovskite quantum dot photoelectric detector based on MXene nanosheet optimization provided by the embodiment comprises the following steps: mixing titanium carbide nano material and CsPbBr₃Mixing the quantum dot solution to obtain a mixed solution; spin-coating the mixed solution on the surface of a glass substrate, annealing the glass substrate coated with the mixed solution in a spin-coating manner, and repeating the steps for multiple times to obtain a photosensitive layer; and gold plating the glass substrate with the photosensitive layer to obtain the electrode. The perovskite quantum dot photoelectric detector based on MXene nanosheet optimization provided by the embodiment has the advantages of strong stability, high photocurrent intensity and high photoresponse, and can be stored in the environment for a long time. The preparation method of the perovskite quantum dot photoelectric detector based on MXene nanosheet optimization provided by the embodiment is simple in process and strong in repeatability, and can be prepared in a large scale in an air environment.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.

Fig. 1 is a schematic structural diagram of a perovskite quantum dot photodetector based on MXene nanosheet optimization, which is prepared by the method for preparing a perovskite quantum dot photodetector based on MXene nanosheet optimization provided in the embodiment of the present application.

In the figure: 100. a glass substrate; 110. ti₃C₂T_XNanosheets; 120. CsPbBr₃A quantum dot film; 130. and a gold electrode.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.

The perovskite quantum dot photoelectric detector based on MXene nanosheet optimization and the preparation method thereof in the embodiment of the present application are specifically described below.

The embodiment provides an MXene nanosheet optimized perovskite quantum dot photodetector and a preparation method thereof, wherein the preparation method of the MXene nanosheet optimized perovskite quantum dot photodetector comprises the following steps:

mixing titanium carbide nano material and CsPbBr₃The mixed solution obtained by mixing the quantum dot solution is coated on the surface of the glass substrate in a spinning mode, the glass substrate coated with the mixed solution in the spinning mode is annealed, and the steps are repeated for multiple times to obtain a photosensitive layer; optionally, CsPbBr₃The preparation method of the quantum dot solution comprises the following steps: mixing Cs⁺The precursor is added to a mixture of 2-propanol and n-hexane, followed by stirring and addition of Pb²⁺Centrifuging the precursor to obtain CsPbBr₃Quantum dots, CsPbBr₃And dispersing the quantum dots into toluene to obtain a CsPbBr3 quantum dot solution. Optionally, Cs⁺The preparation method of the precursor comprises the following steps: mixing Cs₂CO₃Powder and propionic acid at 1.8-7.2 mmol: 2-6ml of the mixture is prepared; optionally, Pb²⁺The preparation method of the precursor comprises the following steps: 1.25-3.75mmol of PbBr₂Dissolving the powder in 5-15ml of mixed solvent of butylamine, 2-propanol and propionic acid, wherein the volume ratio of the butylamine to the 2-propanol to the propionic acid in the mixed solvent is 1-2: 1-2: 1-2. Optionally, Cs⁺Precursor, 2-propanol, n-hexane and Pb²⁺The volume ratio of the mixed precursors is 100 mu L: 20mL of: 40mL of: 1080. mu.L. Optionally, the preparation method of the titanium carbide nano material comprises the following steps: mixing Ti₃AlC₂Mixing the powder and lithium fluoride, adding the mixture into a hydrochloric acid solution, stirring the mixture for full reaction, filtering the mixture, washing the mixture by using deionized water until the pH value is more than or equal to 6 to obtain black precipitate, dispersing the black precipitate into a mixed solution of dimethyl sulfoxide and deionized water, stirring the mixture for more than 24 hours, filtering the mixture, and washing the mixture by using the deionized water to obtain the black precipitateAnd (3) dispersing the multilayer titanium carbide into deionized water, carrying out ultrasonic treatment in an argon environment, centrifuging, and carrying out vacuum drying to obtain the titanium carbide nano material. Optionally, Ti₃AlC₂The mass ratio of the powder to the lithium fluoride when mixed is 1-5: 1; ti₃AlC₂The mass-to-volume ratio of the mixture of the powder and the lithium fluoride when mixed with hydrochloric acid was 1 g: 2-50 ml; optionally, the mass-to-volume ratio of the black precipitate dispersed in the mixed solution of dimethyl sulfoxide and deionized water is as follows: 1 g: 20-30 mL: 250-300 ml; optionally, before the mixed solution is coated on the surface of the glass substrate, the surface of the glass substrate is cleaned by using ultraviolet light. Optionally, when the mixed solution is spin-coated on the surface of the glass substrate, the glass substrate is rotated at a speed of 800-. Optionally, the annealing temperature is 100-150 ℃, and the annealing time is 0.5-2 min. Optionally, the number of times of repeating the above steps is 8-10 or more. Optionally, CsPbBr₃The mass concentration of the quantum dot solution is 50-100 mg/mL; titanium carbide nano material and CsPbBr₃The mass-volume ratio of the quantum dot solution during mixing is 0.05-0.5 mg: 1 ml.

And gold plating the glass substrate with the photosensitive layer to obtain the electrode. Optionally, a magnetron sputtering method is used for gold plating.

As shown in fig. 1, the embodiment also provides an MXene nanosheet-optimized perovskite quantum dot photodetector, which is prepared by the above preparation method of the MXene nanosheet-optimized perovskite quantum dot photodetector, and includes a glass substrate 100 and Ti-doped perovskite quantum dot photodetectors arranged on the surface of the glass substrate 100₃C₂T_XCsPbBr of nanosheet 110₃Quantum dot film 120 and doped Ti₃C₂T_XCsPbBr of nanosheet 110₃A gold electrode 130 on the surface of the quantum dot film 120.

The preparation method of the perovskite quantum dot photoelectric detector based on MXene nanosheet optimization provided by the embodiment uses inorganic perovskite CsPbBr₃As a photosensitive material, Cs atoms are adopted to replace MA groups to effectively improve the stability of the perovskite quantum dot photoelectric detector, and the perovskite quantum dot photoelectric detector is doped with the Cs atomsTitanium carbide nano-materials are added to enhance the internal light field of the quantum dot photoelectric detector film by utilizing the local surface plasma resonance effect, so that more photons are generated and absorbed by the photosensitive layer to be converted into photon-generated carriers, the external quantum efficiency is effectively improved, the prepared perovskite quantum dot photoelectric detector has better stability and can be stored for a long time, the photocurrent intensity and the light responsivity of the perovskite quantum dot photoelectric detector are effectively improved, and meanwhile, the preparation method of the perovskite quantum dot photoelectric detector provided by the embodiment has the advantages of simple process, strong repeatability and stable preparation in the air environment.

The features and performance of the perovskite quantum dot photodetector manufacturing method of the present application are further described in detail with reference to examples below.

Example 1

The embodiment provides an MXene nanosheet optimization-based perovskite quantum dot photoelectric detector, which is prepared by the following method:

adding 0.05mg of titanium carbide nanosheet powder into a glass bottle, and then adding 1mL of CsPbBr₃The quantum dot solution is fully vibrated to uniformly disperse the titanium carbide nano-sheets to CsPbBr₃In the quantum dot solution, 0.05mg/mL of CsPbBr doped with titanium carbide nano-sheet is prepared₃A quantum dot solution. Wherein CsPbBr₃The preparation method of the quantum dot solution comprises the following steps: 2.3472gCs will be mixed₂CO₃Preparation of Cs by dissolving the powder in 4ml of propionic acid⁺Precursor, 1.835g PbBr₂The powder was dissolved in 10ml of butylamine, 2-propanol, propionic acid in a 1: 1: 1 volume ratio of the mixed solvent to prepare Pb²⁺Precursor, followed by 100 μ LCs⁺The precursor was rapidly added to a mixture of 2-propanol (20 mL) and n-hexane (40 mL), and further added with Pb (1080. mu.L) prepared as described above under vigorous stirring²⁺Centrifuging the precursor twice at 1500r/min and 2000r/min to obtain CsPbBr₃Quantum dots are dispersed in toluene to obtain CsPbBr₃A quantum dot solution. The preparation method of the titanium carbide nanosheet comprises the following steps: 2g of Ti₃AlC₂The powder and 2g lithium fluoride were added to 40ml of 9mol/L hydrochloric acid, stirred at 25 ℃ for 24 hours to react sufficiently, filtered, and usedWashing with deionized water until the pH value is more than or equal to 6 to obtain black precipitates, dispersing every 1g of the obtained black precipitates into a solution formed by mixing 20mL of dimethyl sulfoxide solution (DMSO) and 280mL of deionized water, stirring for 24h, then filtering, washing with deionized water to remove residual DMSO to obtain multilayer titanium carbide, carrying out ultrasonic treatment on the obtained multilayer titanium carbide for 300min under the conditions of deionized water and argon, then centrifuging at 8000rpm for 15min, and carrying out vacuum drying at 60 ℃ for 12h to obtain the titanium carbide nanosheet.

Cleaning and modifying the glass substrate: cleaning oil stains on the surface of 2.5 multiplied by 2.5cm glass by using detergent, completely cleaning the detergent on the surface by using deionized water, then performing ultrasonic treatment for 10min, then performing soaking and ultrasonic treatment for 10min by using ethanol, finally performing soaking and ultrasonic treatment for 10min by using acetone, drying the cleaned glass substrate by using nitrogen, and then modifying the glass substrate in an ultraviolet ozone plasma cleaning machine for 5 min.

Preparing a perovskite-doped quantum dot film: placing the cleaned glass substrate on a spin coater, setting the rotation speed to be 1000r/min, carrying out spin coating for 1min, dropwise adding 150 mu L of doping solution on the glass substrate, starting spin coating, annealing at 120 ℃ for 1min after the spin coating is finished, repeating the steps for 10 times, and annealing at 120 ℃ for 30min after the last spin coating is finished.

A gold layer with the thickness of 50nm is deposited on the surface of the doped perovskite quantum dot film by adopting a magnetron sputtering method to serve as an electrode, the electrode distance is 0.2mm, and the length is 4 mm.

The perovskite photoelectric detector prepared by the embodiment is tested under the condition of a light source with variable wavelength and the light power of the light source is constant at 2.9mW/m²The test area is 0.8mm²The results show that: the optimal response wavelength is 490nm, the maximum photocurrent is 1.08nA, and the optimal responsivity is 46.39 muA/W.

Example 2

The embodiment provides an MXene nanosheet optimization-based perovskite quantum dot photoelectric detector, which is prepared by the following method:

under the normal temperature and atmospheric environment, 0.1mg of titanium carbide nanosheet powder is added into a glass bottle, and then 1mL of CsPb is addedBr₃Fully shaking the quantum dot solution to uniformly disperse the titanium carbide nanosheets into the quantum dot solution to obtain 0.1mg/mL of CsPbBr doped with the titanium carbide nanosheets₃A quantum dot solution; titanium carbide nanosheet and CsPbBr₃The preparation of the quantum dot solution is described in example 1.

Cleaning and modifying the glass substrate: cleaning oil stains on the surface of 2.5 multiplied by 2.5cm glass by using detergent, completely cleaning the detergent on the surface by using deionized water, then performing ultrasonic treatment for 10min, then performing soaking and ultrasonic treatment for 10min by using ethanol, finally performing soaking and ultrasonic treatment for 10min by using acetone, drying the cleaned glass substrate by using nitrogen, and then modifying the glass substrate in an ultraviolet ozone plasma cleaning machine for 5 min.

Preparing a perovskite quantum dot film: placing the cleaned glass substrate on a spin coater, setting the rotation speed to be 1000r/min, carrying out spin coating for 1min, dropwise adding 150 mu L of doping solution on the glass substrate, starting spin coating, annealing at 120 ℃ for 1min after the spin coating is finished, repeating the steps for 10 times, and annealing at 120 ℃ for 30min after the last spin coating is finished.

A gold layer with the thickness of 50nm is deposited on the surface of the doped perovskite quantum dot film by adopting a magnetron sputtering method to serve as an electrode, the electrode distance is 0.2mm, and the length is 4 mm.

The perovskite photoelectric detector prepared by the embodiment is tested under the condition of a light source with variable wavelength and the light power of the light source is constant at 2.9mW/m²The test area is 0.8mm²The results showed that the optimum response wavelength was 490nm, the maximum photocurrent was 2.25nA, and the optimum responsivity was 99.67. mu.A/W.

Example 3

The embodiment provides an MXene nanosheet optimization-based perovskite quantum dot photoelectric detector, which is prepared by the following method:

under the normal temperature and atmospheric environment, 0.4mg of titanium carbide nanosheet powder is added into a glass bottle, and then 1mL of CsPbBr is added₃Fully shaking the quantum dot solution to uniformly disperse the titanium carbide nanosheets into the quantum dot solution to obtain 0.4mg/mL of CsPbBr doped with the titanium carbide nanosheets₃A quantum dot solution; titanium carbide nanosheet and CsPbBr₃The preparation of the quantum dot solution is described in example 1.

Cleaning and modifying the glass substrate: cleaning oil stains on the surface of 2.5 multiplied by 2.5cm glass by using detergent, completely cleaning the detergent on the surface by using deionized water, then performing ultrasonic treatment for 10min, then performing soaking and ultrasonic treatment for 10min by using ethanol, finally performing soaking and ultrasonic treatment for 10min by using acetone, drying the cleaned glass substrate by using nitrogen, and then modifying the glass substrate in an ultraviolet ozone plasma cleaning machine for 5 min.

Preparing a perovskite quantum dot film: placing the cleaned glass substrate on a spin coater, setting the rotation speed to be 1000r/min, carrying out spin coating for 1min, dropwise adding 150 mu L of doping solution on the glass substrate, starting spin coating, annealing at 120 ℃ for 1min after the spin coating is finished, repeating the steps for 10 times, and annealing at 120 ℃ for 30min after the last spin coating is finished.

A gold layer with the thickness of 50nm is deposited on the surface of the doped perovskite quantum dot film by adopting a magnetron sputtering method to serve as an electrode, the electrode distance is 0.2mm, and the length is 4 mm.

The perovskite photoelectric detector prepared by the embodiment is tested under the condition of a light source with variable wavelength and the light power of the light source is constant at 2.9mW/m²The test area is 0.8mm²The results showed that the optimum response wavelength was 490nm, the maximum photocurrent was 1.72nA, and the optimum responsivity was 72.62. mu.A/W.

Example 4

The embodiment provides an MXene nanosheet optimization-based perovskite quantum dot photoelectric detector, which is prepared by the following method:

under the normal temperature and atmospheric environment, 0.5mg of titanium carbide nanosheet powder is added into a glass bottle, and then 1mL of CsPbBr is added₃Fully shaking the quantum dot solution to uniformly disperse the titanium carbide nanosheets into the quantum dot solution to obtain 0.5mg/mL of CsPbBr doped with the titanium carbide nanosheets₃A quantum dot solution; titanium carbide nanosheet and CsPbBr₃The preparation of the quantum dot solution is described in example 1.

Cleaning and modifying the glass substrate: cleaning oil stains on the surface of 2.5 multiplied by 2.5cm glass by using detergent, completely cleaning the detergent on the surface by using deionized water, then performing ultrasonic treatment for 10min, then performing soaking and ultrasonic treatment for 10min by using ethanol, finally performing soaking and ultrasonic treatment for 10min by using acetone, drying the cleaned glass substrate by using nitrogen, and then modifying the glass substrate in an ultraviolet ozone plasma cleaning machine for 5 min.

Preparing a perovskite quantum dot film: placing the cleaned glass substrate on a spin coater, setting the rotation speed to be 1000r/min, carrying out spin coating for 1min, dropwise adding 150 mu L of doping solution on the glass substrate, starting spin coating, annealing at 120 ℃ for 1min after the spin coating is finished, repeating the steps for 10 times, and annealing at 120 ℃ for 30min after the last spin coating is finished.

A gold layer with the thickness of 50nm is deposited on the surface of the doped perovskite quantum dot film by adopting a magnetron sputtering method to serve as an electrode, the electrode distance is 0.2mm, and the length is 4 mm.

The perovskite photoelectric detector prepared by the embodiment is tested under the condition of a light source with variable wavelength and the light power of the light source is constant at 2.9mW/m²The test area is 0.8mm²The results showed that the optimum response wavelength was 490nm, the maximum photocurrent was 1.02nA, and the optimum responsivity was 41.63 μ A/W.

Comparative example

The comparative example provides a perovskite quantum dot photoelectric detector, which is prepared by adopting the following method:

preparation of undoped CsPbBr₃A quantum dot solution; CsPbBr₃The preparation of the quantum dot solution is described in example 1.

Cleaning and modifying the glass substrate: cleaning oil stain on the surface of 2.5 × 2.5cm glass with detergent, completely cleaning the surface of the glass with deionized water, ultrasonically treating for 10min with ethanol, ultrasonically treating for 10min, and ultrasonically cleaning in acetone for 10 min. And drying the cleaned glass substrate by using nitrogen, and then putting the glass substrate into an ultraviolet ozone plasma cleaning machine for modification for 5 min.

Preparing an undoped perovskite quantum dot film: placing the cleaned glass substrate on a spin coater at a set rotation speed of 1000r/min, and the spin coating time is 1 min. 150 μ L of CsPbBr was dropped on the glass substrate₃And (3) starting spin coating after the quantum dot solution is coated, annealing at 120 ℃ for 1min after the spin coating is finished, repeating the steps for 10 times, and annealing for 30min after the last spin coating is finished.

Gold with the thickness of 50nm is deposited on the surface of the film by adopting a magnetron sputtering method and is used as an electrode, the electrode distance is 0.2mm, and the length is 4 mm.

The perovskite photoelectric detector prepared by the experiment is tested under the condition of a light source with variable wavelength and the light power of the light source is constant at 2.9mW/m²The test area is 0.8mm²The results showed that the optimum response wavelength was 490nm, the maximum photocurrent was 0.72nA, and the optimum responsivity was 30.99. mu.A/W.

In summary, the maximum photocurrent and the optimal responsivity of the perovskite quantum dot photoelectric detector based on the MXene nanosheet optimization prepared by the method of the present embodiment 1-4 are superior to those of the perovskite photoelectric detector prepared in the comparative example.

The embodiments described above are some, but not all embodiments of the present application. The detailed description of the embodiments of the present application is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.