Silicon-based micro-display and preparation method thereof

文档序号：211509 发布日期：2021-11-05 浏览：2次中文

阅读说明：本技术 一种硅基微显示器及其制备方法 (Silicon-based micro-display and preparation method thereof ) 是由王卫卫周文斌冯峰范国振徐超曹云岭张峰孙剑高裕弟于 2021-08-27 设计创作，主要内容包括：本发明公开了一种硅基微显示器及其制备方法,制备方法包括：提供驱动背板；在驱动背板的一侧依次形成第一电极层、第一功能层、白光发光层、第二功能层和第二电极层；其中,第一功能层和第二功能层中的至少一层包括通过多次错位蒸镀方式形成的厚度不完全相同的微腔调节层；不同厚度的微腔调节层用于增强白光发光层发射的白光中不同颜色的光。通过在掩膜版的作用下,采用多次错位蒸镀的方式,实现形成厚度不完全相同的微腔调节层,使得可以实现红色子像素、绿色子像素、蓝色子像素对应的微腔厚度不一致。保证了RGB对应的子像素点发光时,白光光谱峰值最大时分别对应RGB的峰位,最终实现硅基微显示器的亮度提升,改善了亮度提升困难的问题。(The invention discloses a silicon-based micro-display and a preparation method thereof, wherein the preparation method comprises the following steps: providing a driving back plate; forming a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer and a second electrode layer on one side of the driving backboard in sequence; at least one of the first functional layer and the second functional layer comprises a micro-cavity adjusting layer which is formed in a multi-time staggered evaporation mode and has incompletely the same thickness; the microcavity regulating layers with different thicknesses are used for enhancing light with different colors in white light emitted by the white light emitting layer. By adopting a mode of multiple staggered evaporation under the action of a mask plate, the formation of the microcavity adjusting layer with the same thickness is realized, so that the thickness inconsistency of the microcavities corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel can be realized. When the sub-pixel points corresponding to the RGB are lighted, the peak value of the white light spectrum is maximum, and the peak position of the RGB is respectively corresponding, so that the brightness of the silicon-based micro display is improved finally, and the problem of difficulty in brightness improvement is solved.)

1. A method for fabricating a silicon-based microdisplay, comprising:

providing a driving back plate;

forming a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer and a second electrode layer on one side of the driving backboard in sequence;

at least one of the first functional layer and the second functional layer comprises a micro-cavity adjusting layer which is formed in a multi-time staggered evaporation mode and has incompletely same thickness; the microcavity adjusting layers with different thicknesses are used for enhancing light with different colors in the white light emitted by the white light emitting layer.

2. A method of fabricating a silicon-based micro-display according to claim 1,

the micro-cavity adjusting layer comprises a first micro-cavity adjusting layer, a second micro-cavity adjusting layer and a third micro-cavity adjusting layer, wherein the first micro-cavity adjusting layer, the second micro-cavity adjusting layer and the third micro-cavity adjusting layer are different in thickness; the first microcavity adjusting layer is used for enhancing blue light in white light emitted by the white light emitting layer; the second microcavity adjusting layer is used for enhancing green light in white light emitted by the white light emitting layer; the third microcavity adjusting layer is used for enhancing the red light in the white light emitted by the white light emitting layer;

the microcavity adjusting layer with incompletely the same thickness formed by multiple times of dislocation evaporation comprises:

forming a first microcavity material layer on one side of the first electrode layer, which is far away from the driving back plate, based on a first mask;

relative to the first microcavity material layer, evaporating a second microcavity material layer based on the fact that the first mask is staggered by one sub-pixel length; the second microcavity material layer is positioned on one side of the first microcavity material layer, which is far away from the driving back plate;

relative to the second microcavity material layer, evaporating a third microcavity material layer based on the fact that the first mask is staggered by one sub-pixel length; the third microcavity material layer is positioned on one side of the second microcavity material layer, which is far away from the driving back plate;

the position of the first microcavity material layer and the position of the third microcavity material layer are formed correspondingly to form the first microcavity adjusting layer, and the positions of the first microcavity material layer and the second microcavity material layer which are formed in a laminated mode and the positions of the third microcavity material layer and the second microcavity material layer which are formed in a laminated mode correspond to form the second microcavity adjusting layer; and the positions of the first microcavity material layer, the second microcavity material layer and the third microcavity material layer which are formed in a stacking mode correspond to the positions of the third microcavity adjusting layer.

3. The method of fabricating a silicon-based microdisplay of claim 2 in which the thickness of the first layer of microcavity material is equal to the thickness of the third layer of microcavity material;

and forming a first micro-cavity adjusting layer, a second micro-cavity adjusting layer, a third micro-cavity adjusting layer, a second micro-cavity adjusting layer and a first micro-cavity adjusting layer which are sequentially arranged after three times of evaporation processes along the staggered evaporation direction.

4. The method of fabricating a silicon-based microdisplay of claim 2 in which the white light emitting layer comprises a layer of blue light emitting material, a layer of green light emitting material and a layer of red light emitting material in a stacked arrangement;

forming the light emitting layer includes:

on the basis of a second mask, sequentially forming a blue light-emitting material layer, a green light-emitting material layer and a red light-emitting material layer on one side, far away from the driving back plate, of the first functional layer;

the opening of the second mask exposes the whole display area of the silicon-based micro-display; and in the staggered evaporation direction, the opening of the first mask plate is exposed by the length of four sub-pixels at the same time.

5. A method of fabricating a silicon-based micro-display according to claim 1, wherein the first electrode layer comprises an anode layer and the second electrode layer comprises a cathode layer; the first functional layer comprises at least two layers of a hole injection layer, a hole transport layer and an electron blocking layer; the second functional layer includes at least two layers of an electron injection layer, an electron transport layer, and a hole blocking layer.

In the first functional layer, the hole transport layer or the electron blocking layer is used to form the microcavity adjusting layer;

in the second functional layer, the electron transport layer or the hole blocking layer is used to form the microcavity adjusting layer.

6. The method for preparing a silicon-based micro-display according to claim 2, wherein after forming a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer and a second electrode layer in sequence on one side of the driving backplane, the method further comprises:

forming a filter layer on one side of the second electrode layer far away from the driving back plate; the filter layer comprises a blue filter unit, a green filter unit and a red filter unit; the blue light filtering unit and the first microcavity adjusting layer are arranged in an aligned mode, and the green light filtering unit and the second microcavity adjusting layer are arranged in an aligned mode; and the red light filtering unit and the third micro-cavity adjusting layer are arranged in an opposite position.

7. The method for preparing a silicon-based micro-display according to claim 5, wherein after forming a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer and a second electrode layer in sequence on one side of the driving backplane, the method further comprises:

forming a thin film packaging layer on one side of the second electrode layer far away from the driving back plate; the thin film packaging layer is located between the second electrode layer and the filter layer.

8. A silicon-based microdisplay, comprising:

driving the back plate;

the first electrode layer, the first functional layer, the white light emitting layer, the second functional layer and the second electrode layer are sequentially stacked on one side of the driving back plate;

9. The silicon-based microdisplay of claim 8,

wherein the first microcavity tuning layer comprises a first microcavity material layer; the second microcavity adjusting layer comprises a first microcavity material layer and a second microcavity material layer which are formed in a laminated mode, and a third microcavity material layer and a second microcavity material layer which are formed in a laminated mode; the third microcavity adjusting layer comprises a first microcavity material layer, a second microcavity material layer and a third microcavity material layer which are formed in a laminated mode.

10. The silicon-based microdisplay of claim 9,

the thickness of the first microcavity material layer is equal to that of the third microcavity material layer;

Technical Field

The embodiment of the invention relates to the technical field of display, in particular to a silicon-based micro-display and a preparation method thereof.

Background

With the vigorous development of the panel industry in China and the change of the semiconductor technology, the silicon-based micro-display technology based on the combination of the panel and the semiconductor technology is also rapidly developed.

At present, a silicon-based micro-display is limited by the manufacturing accuracy of a mask and the size of an opening, and colorization is realized by mainly adopting a white light emitting layer and a color filter structure, but the brightness loss of the display is large after light emitted by the white light emitting layer passes through the color filter, so that the brightness of a silicon-based micro-display product is reduced; in addition, since the red, green and blue lights correspond to the optical micro-cavities with different thicknesses, and a White organic light-emitting device (WOLED) with a top emission structure with a single optical thickness cannot maximize the intensities of the red, green and blue lights, respectively, there is a problem that it is difficult to improve the brightness.

Disclosure of Invention

The embodiment of the invention provides a silicon-based micro-display and a preparation method thereof, which are used for improving the brightness of the silicon-based micro-display and solving the problem of difficulty in brightness improvement.

In a first aspect, an embodiment of the present invention provides a method for manufacturing a silicon-based microdisplay, including:

providing a driving back plate;

forming a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer and a second electrode layer on one side of the driving backboard in sequence;

Optionally, the microcavity adjusting layer includes a first microcavity adjusting layer, a second microcavity adjusting layer and a third microcavity adjusting layer with different thicknesses; the first microcavity adjusting layer is used for enhancing blue light in white light emitted by the white light emitting layer; the second microcavity adjusting layer is used for enhancing green light in white light emitted by the white light emitting layer; the third microcavity adjusting layer is used for enhancing the red light in the white light emitted by the white light emitting layer;

the microcavity adjusting layer with incompletely the same thickness formed by multiple times of dislocation evaporation comprises:

forming a first microcavity material layer on one side of the first electrode layer, which is far away from the driving back plate, based on a first mask;

Optionally, the thickness of the first microcavity material layer is equal to the thickness of the third microcavity material layer;

Optionally, the white light emitting layer includes a blue light emitting material layer, a green light emitting material layer and a red light emitting material layer which are stacked;

forming the light emitting layer includes:

Optionally, the first electrode layer comprises an anode layer and the second electrode layer comprises a cathode layer; the first functional layer comprises at least two layers of a hole injection layer, a hole transport layer and an electron blocking layer; the second functional layer includes at least two layers of an electron injection layer, an electron transport layer, and a hole blocking layer.

In the first functional layer, the hole transport layer or the electron blocking layer is used to form the microcavity adjusting layer;

in the second functional layer, the electron transport layer or the hole blocking layer is used to form the microcavity adjusting layer.

Optionally, after a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer, and a second electrode layer are sequentially formed on one side of the driving backplane, the method further includes:

In a second aspect, an embodiment of the present invention provides a silicon-based microdisplay, including:

driving the back plate;

Optionally, the thickness of the first microcavity material layer is equal to the thickness of the third microcavity material layer;

The embodiment of the invention provides a silicon-based micro-display and a preparation method thereof, wherein the preparation method comprises the following steps: providing a driving back plate; forming a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer and a second electrode layer on one side of the driving backboard in sequence; at least one of the first functional layer and the second functional layer comprises a micro-cavity adjusting layer which is formed in a multi-time staggered evaporation mode and has incompletely the same thickness; the microcavity adjusting layers with different thicknesses are used for enhancing light with different colors in the white light emitted by the white light emitting layer. According to the embodiment of the invention, the micro-cavity adjusting layer with the incompletely same thickness is formed by adopting a mode of multiple staggered evaporation under the action of the mask, so that the thickness inconsistency of the micro-cavities corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel can be realized, and the micro-cavity thicknesses of the red sub-pixel, the green sub-pixel and the blue sub-pixel have pertinence. When the sub-pixel points corresponding to the RGB are ensured to be lighted, the white light spectrum peak value is maximum and corresponds to the peak position of the RGB respectively, so that the spectrum intensity of the corresponding color can be improved, the brightness of the silicon-based micro display is improved finally, and the problem of difficulty in improving the brightness is solved.

Drawings

FIG. 1 is a schematic diagram of a prior art silicon-based microdisplay;

fig. 2 is a schematic structural diagram of a pixel unit provided in the prior art;

FIG. 3 is a schematic diagram of another pixel unit provided in the prior art;

FIG. 4 is a schematic diagram of another pixel unit provided in the prior art;

FIG. 5 is a flow chart of a method for fabricating a silicon-based microdisplay according to an embodiment of the invention;

fig. 6 is a schematic structural diagram of a silicon-based microdisplay according to an embodiment of the present invention;

FIG. 7 is a flow chart of another method of fabricating a silicon-based microdisplay according to an embodiment of the invention;

FIG. 8 is a schematic structural diagram of a second mask according to an embodiment of the present invention;

FIG. 9 is a schematic structural diagram of a first mask according to an embodiment of the present invention;

fig. 10 is a schematic diagram of a position of a first mask corresponding to step S240 in the method for manufacturing a silicon-based microdisplay according to the embodiment of the present invention;

fig. 11 is a schematic diagram of a position of a first mask corresponding to step S250 in the method for manufacturing a silicon-based microdisplay according to the embodiment of the present invention;

fig. 12 is a schematic diagram of a position of a first mask corresponding to step S260 in the method for manufacturing a silicon-based microdisplay according to the embodiment of the present invention;

FIG. 13 is a schematic layout diagram of a sub-pixel according to an embodiment of the present invention;

FIG. 14 is a spectrum of white light emitted by a blue sub-pixel according to an embodiment of the present invention;

FIG. 15 is a spectrum of white light emitted by a green sub-pixel according to an embodiment of the present invention;

FIG. 16 is a spectrum of white light emitted by a red sub-pixel according to an embodiment of the present invention;

fig. 17 is a flow chart of another method for fabricating a silicon-based microdisplay according to an embodiment of the invention.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.

As background art, with the vigorous development of the panel industry in China and the increasing growth of semiconductor technology, the silicon-based Micro OLED technology based on the panel combined with the semiconductor technology is also rapidly developed. The silicon-based Micro OLED Micro display device is different from the traditional AMOLED in that a single crystal silicon chip is adopted as a substrate of the silicon-based Micro OLED Micro display device, and amorphous silicon, microcrystalline silicon or low-temperature polycrystalline silicon thin film transistors are adopted as a back plate of the silicon-based Micro OLED Micro display device. The greatest advantage of using a single crystal silicon chip as a substrate is that the pixel size is smaller than that of a conventional display device, and the single fineness is much higher than that of the conventional device.

Fig. 1 is a schematic structural diagram of a silicon-based microdisplay provided in the prior art, and referring to fig. 1, the silicon-based microdisplay includes a driving back plate 110, an anode 120 formed on one side of the driving back plate 110, a white light emitting layer 130, a filter, and a package cover plate 160 fixed on the display surface by UV glue 150. The filter includes a red filter unit 141, a green filter unit 142, and a blue filter unit 143, and red, green, and blue sub-pixels are defined by the red filter unit 141, the green filter unit 142, and the blue filter unit 143, thereby realizing colorization. The existing silicon-based micro-display mainly adopts the white light emitting layer 130 combined with a color filter structure to realize colorization, the main reason is that the silicon-based micro-display requires high display resolution (generally >2000PPI), while the traditional method adopting a precision mask evaporation is limited by the manufacturing precision and the size of an opening of the mask, the most advanced process capability in the world at present can realize the size of the minimum opening of 10um, which is far smaller than the minimum opening of the mask. Exemplarily, fig. 2 is a schematic structural diagram of a pixel unit provided in the prior art, fig. 3 is a schematic structural diagram of another pixel unit provided in the prior art, and fig. 4 is a schematic structural diagram of another pixel unit provided in the prior art, and referring to fig. 2 to fig. 4, the pixel unit includes a red sub-pixel, a green sub-pixel, and a blue sub-pixel. The microdisplay sub-pixel size is typically square 3 × 7um (L1 in fig. 2 is 7um, L2 is 3um), diamond diagonal 4 × 6um (L3 in fig. 3 is 6um, L4 is 4um), hexagonal height 6um (L5 in fig. 4 is 6um), etc., which is much smaller than the minimum aperture of the mask.

However, the white light emitting layer 130 is combined with a color filter to realize colorization, the display brightness loss is large (> 80%), most of the brightness is sacrificed, and the brightness of the silicon-based micro-display product is reduced. In addition, because the red, green and blue lights correspond to the optical micro-cavities with different thicknesses, and the WOLED with the top emission structure with a single optical thickness cannot respectively maximize the intensities of the red, green and blue lights, there is a problem that the brightness is difficult to improve.

In view of this, first, an embodiment of the present invention provides a method for manufacturing a silicon-based microdisplay, fig. 5 is a flowchart of the method for manufacturing a silicon-based microdisplay according to the embodiment of the present invention, fig. 6 is a schematic structural diagram of a silicon-based microdisplay according to the embodiment of the present invention, and with reference to fig. 5 to 6, the method includes:

and S110, providing a driving back plate.

Specifically, the driving backplane 10 refers to a film structure that can provide driving signals for the display panel and play roles of buffering, protecting, supporting, and the like. The driving back plate 10 in the silicon-based micro-display is a silicon-based driving back plate 10, and the silicon-based driving back plate 10 is formed by a whole silicon-based chip. The driving backplate 10 may comprise a silicon substrate and cmos circuitry on the bottom side of the silicon substrate. The cmos circuitry includes the pixel circuitry, row and column driver circuitry, and other functional circuitry required by a silicon-based microdisplay.

S120, sequentially forming a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer and a second electrode layer on one side of the driving back plate; at least one of the first functional layer and the second functional layer comprises a micro-cavity adjusting layer which is formed in a multi-time staggered evaporation mode and has incompletely the same thickness; the microcavity regulating layers with different thicknesses are used for enhancing light with different colors in white light emitted by the white light emitting layer.

Specifically, the first electrode layer 20 is located on one side of the driving back plate 10 and is connected to the cmos circuit in the driving back plate 10. The first functional layer is formed on one side of the first electrode layer 20 away from the driving back plate 10, the white light emitting layer 40 is formed on one side of the first functional layer away from the driving back plate 10, and the second functional layer 50 is formed on one side of the white light emitting layer 40 away from the driving back plate 10; the second electrode layer 60 is formed on the side of the second functional layer 50 away from the driving backplane 10. The first electrode layer 20 includes a plurality of first electrodes 21 spaced apart from each other on one side of the driving back plate 10, and the first electrodes 21 may be anodes, i.e., the first electrode layer 20 includes an anode layer, and the opposite side, the second electrode layer 60 is a cathode layer. The second electrode layer 60 is a common electrode layer, and the film layer on which the second electrode layer 60 is located is an integral conductive layer. The silicon-based micro-display can be of a top emission structure, the anode layer can be a reflective electrode layer formed by evaporating magnesium or silver in an evaporation mode, and the cathode layer can be a transparent electrode layer formed by ITO. If a voltage is applied between the first electrode layer 20 and the second electrode layer 60, the white light emitting layer 40 emits visible light, thereby implementing an image that can be recognized by a user.

At least one of the first functional layer and the second functional layer 50 comprises a microcavity adjusting layer with incompletely same thickness formed by multiple times of staggered evaporation; the microcavity tuning layers of different thicknesses are used to enhance the different colors of light in the white light emitted by the white light-emitting layer 40. If the first electrode layer 20 comprises an anode layer and the second electrode layer 60 comprises a cathode layer, the first functional layer comprises at least two of a hole injection layer 31, a hole transport layer and an electron blocking layer; the second functional layer 50 includes at least two layers of an electron injection layer, an electron transport layer, and a hole blocking layer. In the first functional layer, a hole transport layer or an electron blocking layer may be used to form a microcavity adjusting layer; in the second functional layer 50, an electron transport layer or a hole blocking layer may be used to form the microcavity adjusting layer. Under the action of a mask, a micro-cavity adjusting layer with the same thickness is formed by multiple times of staggered evaporation, so that the thickness inconsistency of micro-cavities corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel can be realized, and the micro-cavity thicknesses of the red sub-pixel, the green sub-pixel and the blue sub-pixel have pertinence. When the sub-pixel points corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel are lighted, the peak positions of red light, green light and blue light respectively correspond to the maximum white light spectrum peak value, so that the spectrum intensity of corresponding colors can be improved, the brightness of the silicon-based micro display is improved finally, and the problem of difficulty in improving the brightness is solved.

The preparation method of the silicon-based micro-display provided by the embodiment of the invention comprises the following steps: providing a driving back plate; forming a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer and a second electrode layer on one side of the driving backboard in sequence; at least one of the first functional layer and the second functional layer comprises a micro-cavity adjusting layer which is formed in a multi-time staggered evaporation mode and has incompletely the same thickness; the microcavity adjusting layers with different thicknesses are used for enhancing light with different colors in the white light emitted by the white light emitting layer. According to the embodiment of the invention, the micro-cavity adjusting layer with the incompletely same thickness is formed by adopting a mode of multiple staggered evaporation under the action of the mask, so that the thickness inconsistency of the micro-cavities corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel can be realized, and the micro-cavity thicknesses of the red sub-pixel, the green sub-pixel and the blue sub-pixel have pertinence. When the sub-pixel points corresponding to the red sub-pixel, the green sub-pixel and the blue sub-pixel are lighted, the peak positions of red light, green light and blue light respectively correspond to the maximum white light spectrum peak value, so that the spectrum intensity of corresponding colors can be improved, the brightness of the silicon-based micro display is improved finally, and the problem of difficulty in improving the brightness is solved.

Optionally, the microcavity tuning layer is located in the first functional layer. If the microcavity adjusting layer is located in the second functional layer 50, light emitted by the white light emitting layer 40 sequentially passes through the second functional layer 50 and the second electrode layer 60 and then is emitted, and the optical path of the light emitted by the white light emitting layer 40 passing through the microcavity adjusting layer in the second functional layer 50 is the thickness corresponding to the microcavity adjusting layer. In the embodiment of the present invention, the microcavity adjusting layer is disposed in the first functional layer, light emitted from the white light emitting layer 40 passes through the first functional layer and then is reflected at the first electrode layer 20, the emitted light is re-emitted into the microcavity adjusting layer in the first functional layer, passes through the microcavity adjusting layer and then sequentially passes through the light emitting layer, the second functional layer 50 and the second electrode layer 60 to be emitted. The optical length of the light emitted by the white light emitting layer 40 traveling through the microcavity adjusting layer in the first functional layer is twice the thickness of the microcavity adjusting layer. That is to say, under the condition of changing the same thickness, the microcavity adjusting layer is disposed in the first functional layer, and compared with the microcavity adjusting layer disposed in the second functional layer 50, it is more beneficial to increase the optical path difference of the light emitted by the red sub-pixel, the green sub-pixel, and the blue sub-pixel, and when the sub-pixel points corresponding to the red sub-pixel, the green sub-pixel, and the blue sub-pixel are illuminated, the peak of the white light spectrum corresponds to the peak of the red light, the green light, and the blue light respectively when the peak is the maximum. Or, under the condition of changing the same optical path, the microcavity adjusting layer is arranged in the first functional layer, and compared with the case that the microcavity adjusting layer is arranged in the second functional layer 50, the silicon-based micro-display with a thinner film thickness is more favorably obtained.

In addition, the first functional layer includes at least two layers of the hole injection layer 31, the hole transport layer, and the electron blocking layer. When the hole injection layer 31 is used as the microcavity adjusting layer, the problem of optical crosstalk is likely to occur when the thickness of the hole injection layer 31 is adjusted. Thus, embodiments of the present invention use either a hole transport layer or an electron blocking layer as the microcavity tuning layer.

Alternatively, referring to fig. 6, the microcavity adjusting layer includes a first microcavity adjusting layer 331, a second microcavity adjusting layer 332, and a third microcavity adjusting layer 333, which are different in thickness; the first microcavity adjusting layer 331 serves to enhance blue light in white light emitted from the white light emitting layer 40; the second microcavity adjusting layer 332 is for enhancing green light in the white light emitted from the white light emitting layer 40; the third microcavity adjusting layer 333 serves to enhance red light among the white light emitted from the white light emitting layer 40.

The not identical microcavity of thickness regulation layer through dislocation evaporation mode formation many times includes:

forming a first microcavity material layer 321 on the side of the first electrode layer away from the driving backplane based on the first mask;

relative to the first microcavity material layer 321, evaporating a second microcavity material layer 322 based on the dislocation of the first mask by one sub-pixel length; the second microcavity material layer 322 is located on the side of the first microcavity material layer 321 away from the driving backplate 10;

evaporating a third microcavity material layer 323 by one sub-pixel length based on the dislocation of the first mask plate relative to the second microcavity material layer 322; the third microcavity material layer 323 is located on the side of the second microcavity material layer 322 away from the driving backplate 10;

wherein, the position of the first microcavity material layer 321 is formed separately corresponds to the first microcavity adjusting layer 331, the position of the first microcavity material layer 321 and the second microcavity material layer 322 are formed by stacking, and the position of the third microcavity material layer 323 and the second microcavity material layer 322 are formed by stacking corresponds to the second microcavity adjusting layer 332; the positions where the first microcavity material layer 321, the second microcavity material layer 322, and the third microcavity material layer 323 are stacked correspond to the formation of the third microcavity adjusting layer 333.

In summary, fig. 7 is a flowchart of a method for manufacturing another silicon-based microdisplay according to an embodiment of the present invention, and referring to fig. 7 and fig. 6, the method for manufacturing includes:

s210, providing a driving back plate.

And S220, forming a first electrode layer on one side of the driving back plate.

And S230, forming a hole injection layer in the first functional layer on the side, away from the driving back plate, of the first electrode layer.

Specifically, fig. 8 is a schematic structural diagram of a second mask according to an embodiment of the present invention, and referring to fig. 8, a hole injection layer 31 is evaporated on a side of the first electrode layer 20 away from the driving backplane 10 by using the second mask 300, and an opening 310 of the second mask 300 exposes the entire display area of the silicon-based microdisplay. The second reticle 300 may be a Common metal reticle (CMM), which is mainly used in the production process of large-sized OLED panels.

And S240, forming a first microcavity material layer on one side of the hole injection layer, which is far away from the driving back plate, based on the first mask.

Specifically, fig. 9 is a schematic structural diagram of a first Mask according to an embodiment of the present invention, and referring to fig. 9, the first Mask 200 may be a Fine Metal Mask (FMM), and an opening 210 of the first Mask 200 is greater than or equal to 10 um. The FMM is mainly used in the manufacturing process of the OLED panel with medium and small size. Fig. 10 is a schematic diagram of a position of the first mask corresponding to step S240 in the method for manufacturing a silicon-based microdisplay according to an embodiment of the present invention, and referring to fig. 10, a first microcavity material layer 321 is formed on a side of the hole injection layer 31 away from the driving backplane 10, where the first microcavity material layer 321 is a material of the hole transport layer.

S250, relative to the first microcavity material layer, evaporating a second microcavity material layer by displacing one sub-pixel length based on the first mask; the second microcavity material layer is located on one side of the first microcavity material layer far away from the driving back plate.

Specifically, fig. 11 is a schematic diagram of a position of the first mask corresponding to step S250 in the method for manufacturing a silicon-based microdisplay according to the embodiment of the present invention, and referring to fig. 11, a second microcavity material layer 322 is evaporated based on a sub-pixel length of the first mask 200, and is staggered with respect to the first microcavity material layer 321; the second microcavity material layer 322 is located on the side of the first microcavity material layer 321 away from the driving backplate 10, and the second microcavity material layer 322 is a material of a hole transport layer.

S260, relative to the second microcavity material layer, evaporating a third microcavity material layer on the basis of the dislocation of the first mask by one sub-pixel length; the third microcavity material layer is located on the side of the second microcavity material layer far away from the driving back plate.

Specifically, fig. 12 is a schematic diagram of a position of the first mask corresponding to step S260 in the method for manufacturing a silicon-based microdisplay according to the embodiment of the present invention, and referring to fig. 12, with respect to the second microcavity material layer 322, a third microcavity material layer 323 is evaporated based on that the first mask 200 is dislocated by one sub-pixel length; the third layer of microcavity material 323 is located on the side of the second layer of microcavity material 322 that is distal from the driving backplate 10. The third microcavity material layer 323 is a material of a hole transport layer. Wherein, the position of separately forming the first microcavity material layer 321 and the position of separately forming the third microcavity material layer 323 correspond to form the first microcavity adjusting layer 331, and the positions of forming the first microcavity material layer 321 and the second microcavity material layer 322 in a stacked manner and the positions of forming the third microcavity material layer 323 and the second microcavity material layer 322 in a stacked manner correspond to form the second microcavity adjusting layer 332; the positions where the first microcavity material layer 321, the second microcavity material layer 322, and the third microcavity material layer 323 are stacked correspond to the formation of the third microcavity adjusting layer 333. The first microcavity adjusting layer 331 serves to enhance blue light in white light emitted from the white light emitting layer 40; the second microcavity adjusting layer 332 is for enhancing green light in the white light emitted from the white light emitting layer 40; the third microcavity adjusting layer 333 serves to enhance red light among the white light emitted from the white light emitting layer 40. That is, the first microcavity adjusting layer 331 adjusts the brightness of the blue sub-pixel B, the second microcavity adjusting layer 332 adjusts the brightness of the green sub-pixel G, and the third microcavity adjusting layer 333 adjusts the brightness of the red sub-pixel R.

Along the direction X of dislocation vapor plating, a first micro-cavity adjusting layer 331, a second micro-cavity adjusting layer 332, a third micro-cavity adjusting layer 333, a second micro-cavity adjusting layer 332 and a first micro-cavity adjusting layer 331 are formed after three times of vapor plating processes. Namely, after the three times of evaporation process, the microcavity adjusting layers of the two blue sub-pixels B, the microcavity adjusting layers of the two green sub-pixels G and the microcavity adjusting layers of the two red sub-pixels R can be formed respectively, so that the preparation efficiency of the silicon-based micro-display is improved. The thickness of the first microcavity material layer 321 may be equal to the thickness of the third microcavity material layer 323, for example, the thicknesses of the first microcavity material layer 321 and the third microcavity material layer 323 are both 20nm, and the thickness of the second microcavity material layer 322 is 25 nm. The thickness of the first microcavity conditioning layer 331 including the first layer 321 of microcavity material can be made equal to the thickness of the first microcavity conditioning layer 331 including the third layer 323 of microcavity material. The thickness of the second microcavity conditioning layer 332, including the first and second layers of microcavity material 321, 322, can also be made equal to the thickness of the second microcavity conditioning layer 332, including the first and second layers of microcavity material 321, 322. Therefore, in the whole silicon-based micro-display, the thickness of each second micro-cavity adjusting layer 332 is equal, and the brightness enhancement degree of each green sub-pixel G is the same; the thicknesses of the first microcavity adjusting layers 331 are equal, the enhancement degree of the brightness of each blue sub-pixel B is the same, and the display effect of the device is ensured. It should be noted that fig. 6 only illustrates the formation sequence of the first microcavity material layer 321, the second microcavity material layer 322, and the third microcavity material layer 323, and in practice, the height of the first microcavity adjusting layer 331 including the first microcavity material layer 321 is equal to the height of the first microcavity adjusting layer 331 including the third microcavity material layer 323; the height of the second microcavity conditioning layer 332, including the first and second layers of microcavity material 321, 322, is equal to the height of the second microcavity conditioning layer 332, including the first and second layers of microcavity material 321, 322.

In the direction X of the staggered evaporation, the openings of the first mask 200 expose four sub-pixels simultaneously. The actual opening of first mask 200 is greater than or equal to 10um, therefore, misplace one sub-pixel length evaporation material minimum dislocation length based on first mask 200 is 2.5 um. The pixel length can be designed to be 2.5um at minimum. The pattern of the first mask 200 may include a plurality of openings 210, and the plurality of openings 210 are simultaneously subjected to staggered evaporation, so as to further improve the preparation efficiency of the silicon-based microdisplay. Illustratively, referring to fig. 9, two adjacent openings 210 may be separated by the length of two sub-pixels. After the three times of evaporation processes, the two openings 210 may be respectively evaporated to form a first microcavity adjusting layer 331, a second microcavity adjusting layer 332, a third microcavity adjusting layer 333, a second microcavity adjusting layer 332, and a first microcavity adjusting layer 331, that is, microcavity adjusting layers corresponding to 12 sub-pixels may be formed. The adjacent blue, green and red sub-pixels B, G and R constitute one pixel unit. Each of the openings 210 is vapor-deposited to form a first microcavity adjusting layer 331, a second microcavity adjusting layer 332, a third microcavity adjusting layer 333, a second microcavity adjusting layer 332, and a first microcavity adjusting layer 331.

Fig. 13 is a schematic layout diagram of a sub-pixel according to an embodiment of the present invention, and referring to fig. 13, a silicon-based micro device is formed, where the silicon-based micro device includes pixel units arranged in an array, the pixel units include a first pixel unit 1 and a second pixel unit 2, the pixel units in the same column are the same, and the first pixel unit 1 and the second pixel unit 2 in the pixel units in the same row are alternately arranged; the first pixel unit 1 comprises a blue sub-pixel B, a green sub-pixel G and a red sub-pixel R which are sequentially arranged; the second pixel unit 2 comprises a red sub-pixel R, a green sub-pixel G and a blue sub-pixel B which are sequentially arranged; the microcavity thicknesses of the red sub-pixel R, the green sub-pixel G and the blue sub-pixel B are different. That is, each opening 210 can form two adjacent pixel units after three times of staggered evaporation processes, and the arrangement order of the sub-pixels of the two adjacent pixel units is opposite. Fig. 9 and 13 show only a small area of sub-pixel arrangement and mask design, and the whole is expanded and expanded in parallel in this manner.

Fig. 14 is a white light spectrum diagram of light emitted by a blue sub-pixel provided in an embodiment of the present invention, fig. 15 is a white light spectrum diagram of light emitted by a green sub-pixel provided in an embodiment of the present invention, fig. 16 is a white light spectrum diagram of light emitted by a red sub-pixel provided in an embodiment of the present invention, and referring to fig. 14 to 16, when light is emitted by sub-pixels corresponding to a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B, peak positions of the white light spectrum respectively correspond to peak positions of red light, green light, and blue light when the peak values of the white light spectrum are maximum. Under the action of the first mask 200, a first microcavity adjusting layer 331, a second microcavity adjusting layer 332 and a third microcavity adjusting layer 333 with different thicknesses are formed by multiple times of staggered evaporation. The thickness of the first microcavity adjusting layer 331 is smaller than that of the second microcavity adjusting layer 332, and the thickness of the second microcavity adjusting layer 332 is smaller than that of the third microcavity adjusting layer 333. The first microcavity adjusting layer 331 adjusts the microcavity thickness of the blue sub-pixel B correspondingly, the second microcavity adjusting layer 332 adjusts the microcavity thickness of the green sub-pixel G correspondingly, and the third microcavity adjusting layer 333 adjusts the microcavity thickness of the red sub-pixel R correspondingly. Therefore, the thickness inconsistency of the micro-cavities corresponding to the red sub-pixel R, the green sub-pixel G and the blue sub-pixel B can be realized, and the micro-cavity thicknesses of the red sub-pixel R, the green sub-pixel G and the blue sub-pixel B have pertinence. When the sub-pixel points corresponding to the red sub-pixel R, the green sub-pixel G and the blue sub-pixel B are lighted, the peak value of the white light spectrum is maximum and respectively corresponds to the peak positions of red light, green light and blue light. Therefore, the spectral intensity of the corresponding color can be improved, the brightness of the silicon-based micro-display is improved finally, and the problem of difficulty in brightness improvement is solved.

And S270, sequentially forming a blue light-emitting material layer, a green light-emitting material layer and a red light-emitting material layer on one side, away from the driving back plate, of the first functional layer based on the second mask.

Specifically, the white light emitting layer 40 may include a blue light emitting material layer for emitting blue light, a green light emitting material layer for emitting green light, and a red light emitting material layer for emitting red light, which are stacked. The mixture of the blue light emitted from the blue light emitting material layer, the green light emitted from the green light emitting material layer, and the red light emitted from the red light emitting material layer is white light. Forming the white light emitting layer includes sequentially forming a blue light emitting material layer, a green light emitting material layer, and a red light emitting material layer on the side of the first functional layer away from the driving backplane 10 based on the second mask 300. The film and material selection behind the third microcavity material layer 323 can be adjusted according to the device display result.

And S280, sequentially forming a second functional layer and a second electrode layer on one side of the white light emitting layer, which is far away from the driving backboard, based on a second mask.

According to the technical scheme provided by the embodiment of the invention, the high PPI can be guaranteed by optimizing the pixel arrangement, and the mask can be easily manufactured and matched with the pixel design. Meanwhile, under the action of a precise mask, a hole transport layer is vapor-deposited in a staggered mode for multiple times, so that the thicknesses of micro cavities corresponding to the blue sub-pixel B, the green sub-pixel G and the red sub-pixel R are different, when pixel points corresponding to the blue sub-pixel B, the green sub-pixel G and the red sub-pixel R are lighted, the peak value of a white light spectrum respectively corresponds to the peak position of the blue sub-pixel B, the green sub-pixel G and the red sub-pixel R to the maximum extent, and the brightness of the silicon-based OLED micro-display device is improved.

Fig. 17 is a flowchart of a method for manufacturing another silicon-based microdisplay according to an embodiment of the invention, and referring to fig. 17, the method for manufacturing includes:

s310, providing a driving back plate.

S320, sequentially forming a first electrode layer, a first functional layer, a white light emitting layer, a second functional layer and a second electrode layer on one side of the driving back plate; at least one of the first functional layer and the second functional layer comprises a micro-cavity adjusting layer which is formed in a multi-time staggered evaporation mode and has incompletely the same thickness; the microcavity adjusting layers with different thicknesses are used for enhancing light with different colors in the white light emitted by the white light emitting layer.

S330, forming a thin film packaging layer on one side, far away from the driving back plate, of the second electrode layer.

Specifically, the thin film encapsulation layer is located on the second electrode layer. The thin film encapsulation layer protects the white light emitting layer and other thin layers from external moisture, oxygen, and the like. The thin film encapsulation layer may include inorganic layers and organic layers, which are alternately stacked. The inorganic layer in the thin film encapsulation layer may be formed by an Atomic Layer Deposition (ALD), a Plasma Enhanced Chemical Vapor Deposition (PECVD), or other Deposition methods. The organic layer may be formed by evaporation.

S340, forming a filter layer on one side of the thin film packaging layer, which is far away from the driving back plate; the filter layer comprises a blue filter unit, a green filter unit and a red filter unit; the blue light filtering unit and the first microcavity regulating layer are arranged in an aligned mode, and the green light filtering unit and the second microcavity regulating layer are arranged in an aligned mode; the red light filtering unit and the third micro-cavity adjusting layer are arranged in an opposite position.

Specifically, a filter layer comprising a color resistance material is formed on one side, away from the driving backboard, of the thin film packaging layer through a yellow light process, the filter layer comprises a plurality of filter units, and the filter layer comprises a blue filter unit, a green filter unit and a red filter unit; the blue light filtering unit and the first microcavity regulating layer are arranged in an aligned mode, and the green light filtering unit and the second microcavity regulating layer are arranged in an aligned mode; the red light filtering unit and the third micro-cavity adjusting layer are arranged in an opposite position. After the light emitted by the light-emitting material layer passes through the filter layer, the filter layer can filter out three monochromatic lights of red, green and blue by changing the wavelength of the emergent light of the organic light-emitting diode, so as to realize the functions of red, green and blue sub-pixels. The filter layer also comprises a black matrix positioned between the filter units, and the black matrix is used for preventing optical crosstalk between different sub-pixels and ensuring the display effect of the display device.

An embodiment of the present invention further provides a silicon-based microdisplay, and referring to fig. 6, the silicon-based microdisplay includes:

a driving back plate 10;

a first electrode layer 20, a first functional layer, a white light emitting layer 40, a second functional layer 50 and a second electrode layer 60 which are sequentially stacked on one side of the driving back plate 10;

at least one of the first functional layer and the second functional layer 50 comprises a microcavity adjusting layer with incompletely same thickness formed by multiple times of staggered evaporation; the microcavity tuning layers of different thicknesses are used to enhance the different colors of light in the white light emitted by the white light-emitting layer 40.

Optionally, the microcavity adjusting layer includes a first microcavity adjusting layer 331, a second microcavity adjusting layer 332, and a third microcavity adjusting layer 333, which are different in thickness; the first microcavity adjusting layer 331 serves to enhance blue light in white light emitted from the white light emitting layer 40; the second microcavity adjusting layer 332 is used to enhance green light in the white light emitted from the white light emitting layer 40; the third microcavity adjusting layer 333 is for enhancing red light in the white light emitted from the white light emitting layer 40;

wherein the first microcavity tuning layer 331 comprises a first microcavity material layer 321; the second microcavity adjusting layer 332 includes a first microcavity material layer 321 and a second microcavity material layer 322 formed by stacking, and a third microcavity material layer 323 and a second microcavity material layer 322 formed by stacking; the third microcavity adjusting layer 333 includes a first microcavity material layer 321, a second microcavity material layer 322, and a third microcavity material layer 323, which are formed by lamination.

Optionally, the thickness of the first microcavity material layer 321 is equal to the thickness of the third microcavity material layer 323;

along the dislocation evaporation direction, a first micro-cavity adjusting layer 331, a second micro-cavity adjusting layer 332, a third micro-cavity adjusting layer 333, a second micro-cavity adjusting layer 332 and a first micro-cavity adjusting layer 331 are formed after three evaporation processes.

At least one of the first functional layer and the second functional layer 50 comprises a microcavity adjusting layer with incompletely same thickness formed by multiple times of dislocation evaporation; the microcavity tuning layers of different thicknesses are used to enhance the different colors of light in the white light emitted by the white light-emitting layer 40. The first functional layer includes at least two layers of a hole injection layer 31, a hole transport layer, and an electron blocking layer; the second functional layer 50 includes at least two layers of an electron injection layer, an electron transport layer, and a hole blocking layer. In the first functional layer, a hole transport layer or an electron blocking layer may be used to form a microcavity adjusting layer; in the second functional layer 50, an electron transport layer or a hole blocking layer may be used to form the microcavity adjusting layer. Under the action of a mask, a micro-cavity adjusting layer with the same thickness is formed by multiple times of staggered evaporation, so that the thickness inconsistency of micro-cavities corresponding to the red sub-pixel R, the green sub-pixel G and the blue sub-pixel B can be realized, and the micro-cavity thicknesses of the red sub-pixel R, the green sub-pixel G and the blue sub-pixel B have pertinence. When the sub-pixel points corresponding to the RGB are ensured to be lighted, the white light spectrum peak value is maximum and corresponds to the peak position of the RGB respectively, so that the spectrum intensity of the corresponding color can be improved, the brightness of the silicon-based micro display is improved finally, and the problem of difficulty in improving the brightness is solved.

Referring to fig. 13, the formed silicon-based microdisplay includes pixel units arranged in an array, where the pixel units include a first pixel unit 1 and a second pixel unit 2, the pixel units in the same column are the same, and the first pixel unit 1 and the second pixel unit 2 in the pixel units in the same row are alternately arranged; the first pixel unit 1 comprises a blue sub-pixel B, a green sub-pixel G and a red sub-pixel R which are sequentially arranged; the second pixel unit 2 comprises a red sub-pixel R, a green sub-pixel G and a blue sub-pixel B which are sequentially arranged; the microcavity thicknesses of the red sub-pixel R, the green sub-pixel G and the blue sub-pixel B are different.

It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

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Silicon-based micro-display and preparation method thereof

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