阅读说明：本技术 具有用于包络跟踪应用的自适应偏置的功率放大器 (Power amplifier with adaptive bias for envelope tracking applications ) 是由 阿列克谢·A·利亚林 许慧明 S·法拉瓦什 G·帕拉斯卡斯 于 2021-06-02 设计创作，主要内容包括：本文提供了具有用于包络跟踪应用的自适应偏置的功率放大器。在一些实施例中,包络跟踪系统包括：功率放大器,其放大射频(RF)信号并接收来自功率放大器供电电压的功率；以及包络跟踪器,其基于RF信号的包络生成功率放大器供电电压。功率放大器包括用于放大RF信号的场效应晶体管(FET)；以及包括接收参考电流的输入端和连接到功率放大器供电电压的输出端的电流镜。电流镜的内部电压用于偏置FET的栅极,以对FET补偿由包络跟踪引起的功率放大器供电电压的变化。(A power amplifier with adaptive biasing for envelope tracking applications is provided herein. In some embodiments, the envelope tracking system comprises: a power amplifier that amplifies a Radio Frequency (RF) signal and receives power from a power amplifier supply voltage; and an envelope tracker that generates a power amplifier supply voltage based on an envelope of the RF signal. The power amplifier includes a Field Effect Transistor (FET) for amplifying the RF signal; and a current mirror including an input to receive the reference current and an output connected to the power amplifier supply voltage. The internal voltage of the current mirror is used to bias the gate of the FET to compensate the FET for variations in the power amplifier supply voltage caused by envelope tracking.)

1. A mobile device, comprising:

a transceiver configured to generate a radio frequency signal;

a power management system comprising an envelope tracker configured to generate a power amplifier supply voltage that varies in relation to an envelope of a radio frequency signal; and

a front-end system comprising a power amplifier configured to amplify a radio frequency signal and receive power from a supply voltage of the power amplifier, the power amplifier comprising a current mirror having an input configured to receive a reference current and an output electrically connected to the supply voltage of the power amplifier, and a field effect transistor configured to amplify the radio frequency signal and having a gate biased based on an internal voltage of the current mirror.

2. The mobile device of claim 1, wherein the internal voltage of the current mirror increases in response to a decrease in the power amplifier supply voltage and decreases in response to an increase in the power amplifier supply voltage.

3. The mobile device of claim 1, wherein the field effect transistor is a short channel metal oxide semiconductor transistor.

4. The mobile device of claim 1, wherein the power amplifier further comprises a choke inductor electrically connected between the power amplifier supply voltage and the drain of the field effect transistor.

5. The mobile device of claim 1, wherein the current mirror is a Wilson current mirror.

6. The mobile device of claim 1, wherein the power amplifier further comprises a buffer configured to buffer an internal voltage of the current mirror to generate a gate bias voltage of the field effect transistor.

7. The mobile device of claim 6, wherein the buffer comprises a first depletion transistor and a second depletion transistor configured to provide buffering of zero offset.

8. The mobile device of claim 1, wherein the current mirror comprises a first mirror transistor having a drain configured to output an internal voltage; a second mirror transistor; a third mirror transistor; and a fourth mirror transistor, the third mirror transistor and the first mirror transistor being connected in series between the input terminal of the current mirror and a ground voltage, the fourth mirror transistor and the second mirror transistor being connected in series between the output terminal of the current mirror and the ground voltage.

9. The mobile device of claim 8, wherein a gate of the first mirror transistor is connected to a gate of the second mirror transistor, and a gate of the third mirror transistor is connected to a gate of the fourth mirror transistor.

10. The mobile device of claim 9, wherein a drain of the second mirror transistor is connected to a gate of the second mirror transistor and a drain of the third mirror transistor is connected to a gate of the third mirror transistor.

11. The mobile device of claim 1, wherein the power amplifier further comprises a current source configured to generate a reference current.

12. An envelope tracking system comprising:

an envelope tracker configured to generate a power amplifier supply voltage that varies in relation to an envelope of the radio frequency signal; and

a power amplifier configured to amplify a radio frequency signal and receive power from a power amplifier supply voltage, the power amplifier including a current mirror having an input configured to receive a reference current and an output electrically connected to the power amplifier supply voltage, and a field effect transistor configured to amplify the radio frequency signal and having a gate biased based on an internal voltage of the current mirror.

13. The envelope tracking system of claim 12 wherein the internal voltage of the current mirror increases in response to a decrease in the power amplifier supply voltage and decreases in response to an increase in the power amplifier supply voltage.

14. The envelope tracking system of claim 12 wherein the field effect transistor is a short channel metal oxide semiconductor transistor.

15. The envelope tracking system of claim 12 wherein the current mirror is a wilson current mirror.

16. The envelope tracking system of claim 12 wherein the power amplifier further comprises a buffer configured to buffer an internal voltage of the current mirror to produce a gate bias voltage of the field effect transistor.

17. The envelope tracking system of claim 12 wherein the current mirror comprises a first mirror transistor having a drain configured to output the internal voltage; a second mirror transistor; a third mirror transistor; and a fourth mirror transistor, the third mirror transistor and the first mirror transistor being connected in series between the input terminal of the current mirror and a ground voltage, the fourth mirror transistor and the second mirror transistor being connected in series between the output terminal of the current mirror and the ground voltage.

18. A method of radio frequency signal amplification in a mobile device, the method comprising:

generating, with an envelope tracker, a power amplifier supply voltage that varies in relation to an envelope of the radio frequency signal;

supplying power to the power amplifier by using the power amplifier supply voltage;

amplifying the radio frequency signal with a field effect transistor of a power amplifier; and

generating a gate bias voltage of a field effect transistor with an internal voltage of a current mirror of a power amplifier includes providing a reference current to an input of the current mirror and providing a power amplifier supply voltage to an output of the current mirror.

19. The method of claim 18, further comprising: the internal voltage of the current mirror is increased in response to a decrease in the power amplifier supply voltage, and decreased in response to an increase in the power amplifier supply voltage.

20. The method of claim 18, further comprising: the internal voltage of the current mirror is buffered to generate a gate bias voltage of the field effect transistor.

Technical Field

Embodiments of the present invention relate to electronic systems, and more particularly, to power amplifiers for use in Radio Frequency (RF) electronic devices.

Background

Power amplifiers are used in Radio Frequency (RF) communication systems to amplify RF signals for transmission by an antenna. It is important to manage the power of the RF signal transmission to extend battery life and/or provide suitable transmission power levels.

Example RF communication systems with one or more power amplifiers include, but are not limited to, mobile phones, tablets, base stations, network access points, Customer Premises Equipment (CPE), portable computers, and wearable electronic devices. For example, in a wireless device that communicates using a cellular standard, a Wireless Local Area Network (WLAN) standard, and/or any other suitable communication standard, a power amplifier may be used for RF signal amplification. The frequency of the RF signal may be in the range of about 30kHz to 300GHz, for example, in the range of about 410MHz to 7.125GHz in the frequency range 1(FR1) of fifth generation (5G) cellular communication, or in the range of about 24.250GHz to 52.600GHz in the frequency range 2(FR2) of the 5G communication standard.

Disclosure of Invention

In some embodiments, the present application relates to a mobile device. The mobile device includes a transceiver configured to generate a radio frequency signal; a power management system comprising an envelope tracker configured to generate a power amplifier supply voltage that varies in relation to an envelope of a radio frequency signal; and a front-end system including a power amplifier configured to amplify the radio frequency signal and receive power from a power amplifier supply voltage. The power amplifier includes a current mirror having an input configured to receive a reference current and an output electrically connected to a power amplifier supply voltage; and a field effect transistor configured to amplify a radio frequency signal and having a gate biased based on an internal voltage of the current mirror.

In various embodiments, the internal voltage of the current mirror increases in response to a decrease in the power amplifier supply voltage and decreases in response to an increase in the power amplifier supply voltage.

In various embodiments, the field effect transistor is a short channel (short channel) metal oxide semiconductor transistor.

In several embodiments, the power amplifier further comprises a choke inductor electrically connected between the power amplifier supply voltage and the drain of the field effect transistor.

In some embodiments, the current mirror is a Wilson current mirror.

In various embodiments, the power amplifier further comprises a buffer configured to buffer an internal voltage of the current mirror to generate a gate bias voltage of the field effect transistor. According to various embodiments, the buffer includes a first depletion transistor and a second depletion transistor configured to provide zero offset buffering.

In various embodiments, a current mirror includes a first mirror transistor having a drain configured to output an internal voltage; a second mirror transistor; and the fourth mirror transistor and the second mirror transistor are connected in series between the output end of the current mirror and the ground voltage. According to various embodiments, a gate of the first mirror transistor is connected to a gate of the second mirror transistor, and a gate of the third mirror transistor is connected to a gate of the fourth mirror transistor. According to various embodiments, a drain of the second mirror transistor is connected to a gate of the second mirror transistor, and a drain of the third mirror transistor is connected to a gate of the third mirror transistor.

In several embodiments, the power amplifier further comprises a current source configured to generate a reference current.

In some embodiments, the envelope tracker includes a DC-to-DC converter configured to output a plurality of regulated voltages; a modulator configured to generate a modulator output voltage at an output based on the plurality of adjustment voltages and an envelope of the radio frequency signal; and a modulator output filter coupled between the modulator output and the power amplifier supply voltage.

In various embodiments, the envelope tracker includes a DC-to-DC converter and an error amplifier configured to operate in parallel with each other to produce a power amplifier supply voltage.

In some embodiments, the present application relates to an envelope tracking system. The envelope tracking system includes an envelope tracker configured to generate a power amplifier supply voltage that varies in relation to an envelope of a radio frequency signal; and a power amplifier configured to amplify the radio frequency signal and receive power from the power amplifier supply voltage. The power amplifier includes a current mirror having an input configured to receive a reference current and an output electrically connected to a power amplifier supply voltage; and a field effect transistor configured to amplify a radio frequency signal and having a gate biased based on an internal voltage of the current mirror.

In various embodiments, the internal voltage of the current mirror increases in response to a decrease in the power amplifier supply voltage and decreases in response to an increase in the power amplifier supply voltage.

In several embodiments, the field effect transistor is a short channel metal oxide semiconductor transistor.

In some embodiments, the power amplifier further comprises a choke inductor electrically connected between the power amplifier supply voltage and the drain of the field effect transistor.

In various embodiments, the current mirror is a wilson current mirror.

In several embodiments, the power amplifier further comprises a buffer configured to buffer an internal voltage of the current mirror to generate a gate bias voltage of the field effect transistor. According to various embodiments, the buffer comprises a first depletion mode transistor and a second depletion mode transistor configured to provide zero offset buffering.

In some embodiments, the current mirror includes a first mirror transistor having a drain configured to output an internal voltage; a second mirror transistor; a third mirror transistor; and a fourth mirror transistor, the third mirror transistor and the first mirror transistor being connected in series between the input terminal of the current mirror and a ground voltage, the fourth mirror transistor and the second mirror transistor being connected in series between the output terminal of the current mirror and the ground voltage. According to various embodiments, a gate of the first mirror transistor is connected to a gate of the second mirror transistor, and a gate of the third mirror transistor is connected to a gate of the fourth mirror transistor. In various embodiments, a drain of the second mirror transistor is connected to a gate of the second mirror transistor, and a drain of the third mirror transistor is connected to a gate of the third mirror transistor.

In several embodiments, the power amplifier further comprises a current source configured to generate a reference current.

In some embodiments, the envelope tracker includes a DC-to-DC converter configured to output a plurality of regulated voltages, a modulator configured to generate a modulator output voltage at an output based on the plurality of regulated voltages and an envelope of the radio frequency signal, and a modulator output filter coupled between the modulator output and the power amplifier supply voltage.

In several embodiments, the envelope tracker includes a DC-to-DC converter and an error amplifier configured to operate in parallel with each other to produce a power amplifier supply voltage.

In some embodiments, the present application relates to a method of radio frequency signal amplification in a mobile device. The method includes generating, with an envelope tracker, a power amplifier supply voltage that varies in relation to an envelope of the radio frequency signal; supplying power to the power amplifier by using the power amplifier supply voltage; amplifying the radio frequency signal with a field effect transistor of a power amplifier; and generating a gate bias voltage of the field effect transistor with an internal voltage of a current mirror of the power amplifier, including providing a reference current to an input of the current mirror and providing a power amplifier supply voltage to an output of the current mirror.

In various embodiments, the method includes increasing the internal voltage of the current mirror in response to a decrease in the power amplifier supply voltage, and decreasing the internal voltage of the current mirror in response to an increase in the power amplifier supply voltage.

In several embodiments, the field effect transistor is a short channel metal oxide semiconductor transistor.

In various embodiments, the method further comprises providing the power amplifier supply voltage to a drain of the field effect transistor with a choke inductor.

In some embodiments, the current mirror is a wilson current mirror.

In various embodiments, the method further comprises buffering an internal voltage of the current mirror to generate a gate bias voltage of the field effect transistor.

In various embodiments, the method further comprises generating a reference current with the current source.

In various embodiments, generating the power amplifier supply voltage includes outputting a plurality of regulated voltages from a DC-to-DC converter; generating, with a modulator, a modulator output voltage based on the plurality of adjustment voltages and an envelope of a radio frequency signal; and filtering the modulator output voltage with a modulator output filter to generate a power amplifier supply voltage.

In some embodiments, generating the power amplifier supply voltage includes tracking the envelope with a DC-to-DC converter and an error amplifier operating in parallel.

Drawings

FIG. 1 is a schematic diagram of one embodiment of a mobile device.

Fig. 2 is a schematic diagram of one embodiment of a transmission system that transmits Radio Frequency (RF) signals from a mobile device.

Fig. 3 is a schematic diagram of a power amplifier according to one embodiment.

Fig. 4A is an example plot of power gain versus output power for a power amplifier without adaptive biasing.

Fig. 4B is an example plot of power gain versus output power for a power amplifier with adaptive biasing.

Fig. 4C is an example graph of quiescent drain current versus supply voltage for a power amplifier without adaptive biasing.

Fig. 4D is an example graph of quiescent drain current versus supply voltage for a power amplifier with adaptive biasing.

Fig. 5 is a schematic diagram of a power amplifier according to another embodiment.

Fig. 6A is an exemplary plot of amplitude distortion versus load power for a power amplifier with adaptive biasing but without a buffer.

Fig. 6B is an exemplary graph of amplitude distortion versus load power for a power amplifier with adaptive bias and buffer.

Fig. 6C is an example plot of phase distortion versus load power for a power amplifier with adaptive bias but without a buffer.

Fig. 6D is an example graph of phase distortion versus load power for a power amplifier with adaptive bias and buffer.

Fig. 7A is an example graph of drain current versus drain voltage for a short channel Metal Oxide Semiconductor (MOS) transistor.

Fig. 7B is an example graph of drain current versus gate voltage for a short channel MOS transistor.

Fig. 8A is an example graph of power amplifier supply voltage versus time.

Fig. 8B is another example graph of power amplifier supply voltage versus time.

FIG. 9A is a schematic diagram of an envelope tracking system according to one embodiment.

FIG. 9B is a schematic diagram of an envelope tracking system according to another embodiment.

FIG. 10 is a schematic diagram of an envelope tracking system according to another embodiment.

Fig. 11A is a schematic diagram of one embodiment of a packaged module.

Fig. 11B is a cross-sectional schematic view of the package module taken along line 11B-11B of fig. 11A.

Figure 12 is a schematic diagram of one embodiment of a phone pad.

Detailed Description

The following detailed description of some embodiments presents various descriptions of specific embodiments. The innovations described herein may, however, be embodied in many different ways, such as defined and covered by the claims. In the description, reference is made to the drawings wherein like reference numbers may indicate identical or functionally similar elements. It will be understood that the elements shown in the figures are not necessarily drawn to scale. Further, it will be understood that some embodiments may include more elements than are shown in the figures and/or a subset of the elements shown in the figures. Furthermore, some embodiments may incorporate any suitable combination of features from two or more of the figures.

Fig. 1 is a schematic diagram of one example of a mobile device 100. The mobile device 100 comprises a baseband system 1, a transceiver 2, a front-end system 3, an antenna 4, a power management system 5, a memory 6, a user interface 7, and a battery 8.

The mobile device 100 may be configured to communicate using a variety of communication technologies including, but not limited to, 2G, 3G, 4G (including LTE, LTE-Advanced, and LTE-Advanced Pro), 5G, WLAN (e.g., Wi-Fi), WPAN (e.g., Bluetooth and ZigBee), WMAN (e.g., WiMax), and/or GPS technologies.

The transceiver 2 generates RF signals for transmission and processes incoming RF signals received from the antenna 4. It should be appreciated that various functions associated with transmitting and receiving RF signals may be carried out by one or more components generally represented in fig. 1 as transceiver 2. In one example, separate components (e.g., separate circuits or dies) may be provided to process some types of RF signals.

The front-end system 3 helps to condition the signals sent to and/or received from the antenna 4. In the illustrated embodiment, the front-end system 3 includes a Power Amplifier (PA)11, a Low Noise Amplifier (LNA)12, a filter 13, a switch 14, and a duplexer 15. However, other embodiments are possible.

For example, the head-end system 3 may provide a variety of functions including, but not limited to, amplifying a signal for transmission, amplifying a received signal, filtering a signal, switching between different frequency bands, switching between different power modes, switching between transmit and receive modes, signal duplexing, signal multiplexing (e.g., diplex or triplex), or combinations thereof.

In some embodiments, the mobile device 100 supports carrier aggregation, providing flexibility to increase peak data rates. Carrier aggregation may be used for Frequency Division Duplexing (FDD) and Time Division Duplexing (TDD), and may be used to aggregate multiple carriers or channels. Carrier aggregation includes contiguous aggregation in which contiguous carriers within the same operating frequency band are aggregated. Carrier aggregation may also be discontinuous and may include carriers separated in frequency within one common frequency band and/or in different frequency bands.

The antenna 4 may include an antenna for various types of communication. For example, antenna 4 may include an antenna associated with transmitting and/or receiving signals associated with a wide variety of frequencies and communication standards.

In some embodiments, antennas 4 support MIMO communications and/or switched diversity communications. For example, MIMO communication uses multiple antennas to transmit multiple data streams over a single radio frequency channel. MIMO communications benefit from higher signal-to-noise ratios, improved coding, and/or reduced signal interference due to spatial multiplexing differences in the radio environment. Switched diversity refers to communication in which a particular antenna is selected for operation at a particular time. For example, a switch may be used to select a particular antenna from a set of antennas based on various factors, such as an observed bit error rate and/or a signal strength indicator.

In some implementations, the mobile device 100 can operate with beamforming. For example, the front-end system 3 may comprise a phase shifter with a variable phase controlled by the transceiver 2. In addition, the phase shifters are controlled to provide beam forming and directivity for transmitting and/or receiving signals using the antenna 4. For example, in the case of signal transmission, the phase of the transmit signal provided to the antenna 4 is controlled such that the radiated signals from the antenna 4 combine using constructive and destructive interference to generate an aggregate transmit signal that exhibits beamform quality, propagating more signal strength in a given direction. In the case of signal reception, the phase is controlled so that more signal energy is received when the signal arrives at the antenna 4 from a particular direction. In some embodiments, antenna 4 includes one or more arrays of antenna elements to enhance beamforming.

The baseband system 1 is coupled to a user interface 7 to facilitate processing of various user inputs and outputs (I/O), such as voice and data. The baseband system 1 provides a digital representation of the transmit signal to the transceiver 2, which the transceiver 2 processes to generate an RF signal for transmission. The baseband system 1 also processes the digital representation of the received signal provided by the transceiver 2. As shown in fig. 1, the baseband system 1 is coupled to a memory 6 to facilitate operation of the mobile device 100.

Memory 6 may be used for a wide variety of purposes such as storing data and/or instructions to facilitate operation of mobile device 100 and/or to provide storage of user information.

The power management system 5 provides a variety of power management functions for the mobile device 100. The power management system 5 of fig. 1 includes an envelope tracker 60. As shown in fig. 1, the power management system 5 receives battery voltage from the battery 8. The battery 8 may be any suitable battery used in the mobile device 100, including, for example, a lithium ion battery.

The mobile device 100 of fig. 1 illustrates one example of an RF communication system that may include one or more power amplifiers implemented in accordance with one or more features of the present application. However, the teachings herein are applicable to RF communication systems implemented in a wide variety of ways.

Fig. 2 is a schematic diagram of one embodiment of a transmission system 130 for transmitting RF signals from a mobile device. The transmit system 130 includes a battery 101, an envelope tracker 102, a power amplifier 103, a directional coupler 104, a duplex switching circuit 105, an antenna 106, a baseband processor 107, a signal delay circuit 108, a Digital Predistortion (DPD) circuit 109, an I/Q modulator 110, an observation receiver 111, an intermodulation detection circuit 112, an envelope delay circuit 121, a coordinate rotation digital computation (CORDIC) circuit 122, a shaping circuit 123, a digital-to-analog converter 124, and a reconstruction filter 125.

The transmit system 130 of fig. 2 illustrates one example of an RF communication system that may include a power amplifier implemented according to one or more features of the present application. However, the teachings herein are applicable to RF communication systems implemented in a wide variety of ways.

The baseband processor 107 operates to generate I and Q signals that correspond to signal components of a sine wave or a signal having a desired amplitude, frequency, and phase. For example, the I signal may be used to represent the in-phase component of a sine wave, while the Q signal may be used to represent the quadrature-phase component of a sine wave, which may be an equivalent representation of a sine wave. In some embodiments, the I and Q signals are provided to I/Q modulator 110 in a digital format. The baseband processor 107 may be any suitable processor configured to process baseband signals. For example, the baseband processor 107 may include a digital signal processor, a microprocessor, a programmable core (core), or any combination thereof.

Signal delay circuit 108 provides adjustable delays to the I and Q signals to help control the envelope signal and RF signal RF_INRelative alignment therebetween. The amount of delay provided by the signal delay circuit 108 is controlled based on the amount of intermodulation detected by the intermodulation detection circuit 112.

DPD circuit 109 operates to provide digital shaping to the delayed I and Q signals from signal delay circuit 108 to generate digitally predistorted I and Q signals. In the illustrated embodiment, the DPD provided by DPD circuit 109 is controlled based on the amount of intermodulation detected by intermodulation detection circuit 112. The DPD circuit 109 is used to reduce distortion of the power amplifier 103 and/or to improve efficiency of the power amplifier 103.

I/Q modulator 110 receives digitally predistorted I and Q signals, which are processed to generate an RF signal RF_IN. For example, the I/Q modulator 110 may include: a DAC configured to convert the digitally predistorted I and Q signals to an analog format; a mixer for up-converting the analog I and Q signals to radio frequencies; and a signal combiner for combining the up-converted I and Q signals into an RF signal suitable for amplification by the power amplifier 103. In some implementations, the I/Q modulator 110 may include one or more filters configured to filter the frequency content of the signal processed therein.

The envelope delay circuit 121 delays the I and Q signals from the baseband processor 107. In addition, CORDIC circuitry 122 processes the delayed I and Q signals to generate RF signals representative of the RF signals_INThe envelope of the digital envelope signal. Although fig. 2 shows an embodiment using CORDIC circuitry 122, the envelope signal may be obtained in other ways.

The shaping circuit 123 operates to shape the digital envelope signal to enhance the performance of the transmit system 130. In some embodiments, the shaping circuit 123 comprises a shaping table that maps each level of the digital envelope signal to a corresponding shaped envelope signal level. Envelope shaping may help control linearity, distortion, and/or efficiency of the power amplifier 103.

In the illustrated embodiment, the shaped envelope signal is a digital signal that is converted to an analog envelope signal by the DAC 124. In addition, the analog envelope signal is filtered by a reconstruction filter 125 to generate an envelope signal suitable for use by the envelope tracker 102. In some embodiments, the reconstruction filter 125 comprises a low pass filter.

With continued reference to FIG. 2, the envelope tracker 102 receives the envelope signal from the reconstruction filter 125 and the battery voltage V from the battery 101_BATTAnd using the envelope signal to generate an RF signal RF associated with the envelope signal_INEnvelope-varied power amplifier supply voltage V_PA. In this example, power amplifier 103 receives an RF signal RF from I/Q modulator 110_INAnd the amplified RF signal RF is passed through a duplex switching circuit 105_OUTIs provided to the antenna 106.

The directional coupler 104 is located between the output of the power amplifier 103 and the input of the duplex switching circuit 105, allowing the measurement of the output power of the power amplifier 103 to exclude the insertion loss of the duplex switching circuit 105. The sensed output signal from the directional coupler 104 is provided to an observation receiver 111, which observation receiver 111 may comprise mixers for down-converting the I and Q signal components of the sensed output signal and DACs for generating I and Q observation signals from the down-converted signal.

Intermodulation detection circuitry 112 determines the intermodulation product between the I and Q observation signals and the I and Q signals from baseband processor 107. In addition, intermodulation detection circuit 112 controls the delay of DPD and/or signal delay circuit 108 provided by DPD circuit 109 to control the envelope signal and RF signal RF_INRelative alignment therebetween.

By including the output from the power amplifier 103 and the feedback path of the baseband, the I and Q signals may be dynamically adjusted to optimize the operation of the transmit system 130. Configuring the transmit system 130 in this manner may help provide power control, compensate for transmitter impairments, and/or perform DPD, for example.

Although shown as a single stage, the power amplifier 103 may include one or more stages. Further, an RF communication system, such as a mobile device, may include multiple power amplifiers. In such embodiments, separate envelope trackers may be provided for different power amplifiers and/or one or more shared envelope trackers may be used.

Adaptive biasing for power amplifiers operating with envelope tracking

Envelope tracking is a technique that may be used to improve the Power Added Efficiency (PAE) of a power amplifier by effectively controlling the voltage level of the power amplifier supply voltage associated with the envelope of the RF signal amplified by the power amplifier. Therefore, when the envelope of the RF signal increases, the voltage supplied to the power amplifier may be increased. Also, when the envelope of the RF signal is reduced, the voltage supplied to the power amplifier may be reduced to reduce power consumption.

In one example, the envelope tracker includes a DC-to-DC converter operating in conjunction with an error amplifier to generate a power amplifier supply voltage based on the envelope signal. For example, a DC-to-DC converter and an error amplifier may be electrically connected in parallel with each other, the DC-to-DC converter may track the low frequency component of the envelope signal, and the error amplifier may track the high frequency component of the envelope signal. For example, the switching frequency of the DC-to-DC converter may be reduced to less than the maximum frequency component of the envelope signal, and the error amplifier may smooth the gap in the converter output to generate the power amplifier supply voltage. In some embodiments, the DC-to-DC converter and the error amplifier are combined via a combiner.

In another example, the envelope tracker includes: a multi-output boost switcher for generating regulated voltages of different voltage levels; a set of switches for controlling the selection of an appropriate regulated voltage over time in dependence upon the envelope signal; and a filter for filtering the output of the set of switches to produce a power amplifier supply voltage.

A power amplifier with adaptive biasing for envelope tracking applications is provided herein. In some embodiments, the envelope tracking system comprises: a power amplifier that amplifies the RF signal and receives power from a power amplifier supply voltage; and an envelope tracker that generates a power amplifier supply voltage based on an envelope of the RF signal. The power amplifier includes a Field Effect Transistor (FET) for amplifying the RF signal, and a current mirror including an input for receiving a reference current and an output connected to a power amplifier supply voltage. The internal voltage of the current mirror is used to bias the gate of the FET to compensate for variations in the power amplifier supply voltage of the FET due to envelope tracking.

By implementing the power amplifier with an adaptive bias, the undesirable characteristics of the FET of the power amplifier are compensated for. Such adaptive biasing helps to compensate for channel length modulation and/or drain induced barrier lowering, which would otherwise result in a highly variable (high) RF gain with respect to the power amplifier supply voltage, for example.

In some embodiments, the FET is implemented as a short channel Metal Oxide Semiconductor (MOS) transistor. While short-channel MOS transistors suffer from multiple transistor non-ideal characteristics, adaptive biasing provides compensation so that short-channel MOS transistors can be used in power amplifiers without significantly degrading the performance of the power amplifier. Since short-channel MOS transistors can be manufactured in a process that is low cost and/or achieves high integration, it is desirable to implement power amplifiers using short-channel MOS transistors in a number of applications.

In some embodiments, a buffer is further included for buffering an internal voltage of the current mirror to generate a gate bias voltage of the FET. The inclusion of the buffer can increase bandwidth and speed up the transient response of the bias of the power amplifier, thereby improving amplitude and phase distortion.

The current mirror can be implemented in a variety of ways. In some embodiments, the current mirror is implemented as a Wilson current mirror. For example, the current mirror may be implemented using n-type field effect transistors (NFETs) arranged as a four-transistor wilson current mirror. For example, the drain-source voltage of the first NFET of the four-transistor wilson mirror increases as the output voltage decreases, and is well suited to increasing the gain of the power amplifier when the power amplifier supply voltage decreases.

Fig. 3 is a schematic diagram of a power amplifier 250 according to one embodiment. Power amplifier 250 includes NFET231, wilson current mirror 232, input DC isolation (blocking) capacitor 233, output DC isolation capacitor 234, choke inductor 235, and reference current source 236.

Although fig. 3 depicts one embodiment of a power amplifier with adaptive biasing, the teachings herein are applicable to power amplifiers implemented in a variety of ways.

The power amplifier 250 receives an RF input signal RF at an RF input terminal_INAnd the amplified RF output signal RF_OUTTo the RF output terminal. In the embodiment shown, an input DC isolation capacitor 233 is connected between the RF input terminal and the gate of NFET231 to allow the gate voltage of NFET231 to be biased separately from the DC voltage of the RF input terminal. In addition, an output DC blocking capacitor 234 is connected between the drain of the NFET231 and the RF output terminal to decouple the drain voltage of the NFET231 from the DC voltage of the RF output terminal.

As shown in fig. 3, choke inductor 235 couples power amplifier supply voltage V_PATo the drain of NFET 231. Power amplifier supply voltage V_PAMay be generated by an envelope tracker including, but not limited to, any of the envelope trackers disclosed herein.

NFET231 amplifies RF input signal RF_INTo generate an RF output signal RF_OUT. In addition, the gate of NFET231 is biased by the internal voltage of wilson current mirror 232. Also, the source of NFET231 receives ground voltage (ground), while the drain of NFET231 receives power amplifier supply voltage V from choke inductor 235_PA. In some embodiments, the NFET231 is implemented as an n-type metal oxide semiconductor (NMOS) transistor. For example, the NFET231 may be a short channel NMOS transistor.

Wilson current mirror 232 includes a reference current I that is received from a reference current source 236_REFAnd a connectionTo the power amplifier supply voltage V_PATo the output terminal of (a). Wilson current mirror 232 includes a first current mirror NFET 241, a second current mirror NFET 242, a third current mirror NFET 243, and a fourth current mirror NFET 244.

As shown in fig. 3, first current mirror NFET 241 and second current mirror 242 each include a source that is grounded. In addition, the gate of the first current mirror NFET 241 is connected to the gate and drain of the second current mirror NFET 242 and is also connected to the source of the fourth current mirror NFET 244. Additionally, the output of wilson current mirror 232 is connected to the drain of fourth current mirror NFET 244, while the input of wilson current mirror 232 is connected to the gate of fourth current mirror NFET 244, and also to the gate and drain of third current mirror NFET 243. Also, the drain of the first current mirror NFET 241 and the drain of the third current mirror NFET 243 are connected to each other.

In the embodiment shown, the internal voltage of Wilson current-mirror 232 is provided to the gate of NFET231 to provide adaptive biasing. In this embodiment, the internal voltage corresponds to the drain voltage of the first current mirror NFET 241.

Wilson current mirror 232 operates to mirror the reference current I received at the input_REFTo generate an output current provided at the output terminal. When the power amplifier supplies voltage V_PAAs the envelope tracking changes, the drain voltage of the first current mirror NFET 241 also changes, so that the output current tracks the input current. Adjustment of the Wilson current-mirror 232 causes the drain-source voltage of the first current-source NFET 241 to follow the power amplifier supply voltage V_PAIs increased.

The drain voltage of the first current mirror NFET 241 is well suited to follow the power amplifier supply voltage V_PAIncrease the gain of the power amplifier with a decrease in the power amplifier supply voltage V_PADecreases the gain of the power amplifier. Thus, Wilson current mirror 232 provides an adaptive bias to NFET231 to compensate for gain variations caused by supply variations. When the NFET231 is implemented as a short channel NMOS transistor, such adaptive biasing is well suited to compensate for short channel effects (e.g., channel length modulation and/or drain induced barrier lowering))。

Fig. 4A is a graph of an example of power gain versus output power for a power amplifier without adaptive biasing.

Fig. 4B is a graph of one example of power gain versus output power for a power amplifier with adaptive biasing.

As shown by a comparison of fig. 4A and 4B, the adaptive bias reduces the variation in gain (e.g., from about 15dB to about 3dB in this example).

Fig. 4C is a graph of one example of quiescent drain current versus supply voltage for a power amplifier without adaptive biasing.

Fig. 4D is a graph of one example of quiescent drain current versus supply voltage for a power amplifier with adaptive biasing.

As shown by a comparison of fig. 4C and 4D, the adaptive biasing reduces the variation in quiescent drain current (e.g., from about 12 times to about 1.25 times in this example).

Fig. 5 is a schematic diagram of a power amplifier 280 according to another embodiment. Power amplifier 280 includes NFET231, wilson current mirror 232, input DC blocking capacitor 233, output DC blocking capacitor 234, choke inductor 235, reference current source 236, and buffer 270.

The power amplifier 280 of fig. 5 is similar to the power amplifier 250 of fig. 3, except that the power amplifier 280 further includes a buffer 270 for buffering the drain voltage of the first current mirror NFET 241 to generate the gate bias voltage of NFET 231.

In the illustrated embodiment, the buffer 270 is implemented as a zero offset buffer that includes a first depletion mode (d-mode) FET 271 and a second d-mode FET 272, which may be, for example, a Junction Field Effect Transistor (JFET) or a Schottky (Schottky) gate FET. The drain of the first d-mode FET 271 receives the battery voltage V_BATTAnd the gate of the first d-mode FET 271 receives the internal voltage of the wilson current mirror 232. In addition, the gate and source of the second d-mode FET 272 are grounded, while the drain of the second d-mode FET 272 outputs a gate bias voltage to bias the node of the NFET231 of the power amplifierThe point is connected to the source of the first d-type FET 271.

By including the buffer 270, increased bandwidth and improved transient response of the power amplifier bias circuit may be achieved.

Fig. 6A is a graph of amplitude distortion versus load power for a power amplifier with adaptive biasing but without a buffer.

Fig. 6B is a graph of amplitude distortion versus load power for a power amplifier with adaptive bias and buffer.

As shown by a comparison of fig. 6A and 6B, the use of a buffer in conjunction with adaptive biasing reduces amplitude distortion (AM to AM).

Fig. 6C is a graph of phase distortion versus load power for a power amplifier with adaptive biasing but without a buffer.

Fig. 6D is a graph of phase distortion versus load power for a power amplifier with adaptive bias and buffer.

As shown by a comparison of fig. 6C and 6D, the use of a buffer in conjunction with adaptive biasing reduces phase distortion (AM to PM).

Fig. 7A is a graph of one example of drain current versus drain voltage for a short channel MOS transistor. Various plots of drain current versus drain voltage at different gate-source voltages for short channel MOS transistors are depicted. These graphs include both the case where the channel length modulation is not considered (dashed line graph) and the case where the channel length modulation is considered (solid line graph).

Fig. 7B is a graph of one example of drain current versus gate voltage for a short channel MOS transistor. The graph depicts one example of transistor threshold voltage shift due to drain induced barrier lowering.

Figures 8A-8B show two examples of power amplifier supply voltage versus time.

In fig. 8A, a graph 447 shows an example of the voltage of the RF signal 441 and the power amplifier supply voltage 443 with respect to time. RF signal 441 has an envelope 442.

Importantly, the power amplifier supply voltage 443 of the power amplifier is greater than the voltage of the RF signal 441. For example, powering a power amplifier with a power amplifier supply voltage having a magnitude less than that of the RF signal may clip the radio frequency signal, thereby creating signal distortion and/or other problems. Therefore, it is important that the power amplifier supply voltage 443 be greater than the voltage of the envelope 442. However, it may also be desirable to reduce the voltage difference between the power amplifier supply voltage 443 and the envelope 442 of the RF signal 441, because the area between the power amplifier supply voltage 443 and the envelope 442 may represent an energy loss, which may reduce battery life and increase the amount of heat generated in the wireless device.

In fig. 8B, a graph 448 shows another example of the voltage of the RF signal 441 and the power amplifier supply voltage 444 versus time. Unlike the power amplifier supply voltage 443 of fig. 8A, the power amplifier supply voltage 444 of fig. 8B varies in relation to the envelope 442 of the RF signal 441. The area between power amplifier supply voltage 444 and envelope 442 in fig. 8B is smaller than the area between power amplifier 443 and envelope 442 in fig. 8A, so plot 448 of fig. 8B may be associated with a power amplifier with higher energy efficiency.

Fig. 9A is a schematic diagram of an envelope tracking system 500 according to an embodiment. The envelope tracking system 500 includes a power amplifier 501 and an envelope tracker 502. The power amplifier 501 amplifies a radio frequency signal 503.

The envelope tracker 502 receives an envelope signal 504 corresponding to an envelope of a radio frequency signal 503. In addition, the envelope tracker 502 generates a power amplifier supply voltage V_PAWhich provides power to the power amplifier 501.

The illustrated envelope tracker 502 includes a DC-to-DC converter 511 and an error amplifier 512 that operate in conjunction with each other to generate a power amplifier supply voltage V based on an envelope signal 504_PA. In the illustrated embodiment, the outputs of the DC-to-DC converter 511 and the error amplifier 512 are combined using a combiner 515.

The envelope tracker 502 of fig. 9A illustrates one example of analog envelope tracking, where switching regulators operate in parallel with each other to track the envelope of an RF signal.

Fig. 9B is a schematic diagram of an envelope tracking system 540 according to another embodiment. The envelope tracking system 540 includes a power amplifier 501 and an envelope tracker 532. The power amplifier 501 amplifies a radio frequency signal 503.

The envelope tracker 532 receives the envelope signal 504 corresponding to the envelope of the radio frequency signal 503. In addition, the envelope tracker 532 generates a power amplifier supply voltage V_PAWhich provides power to the power amplifier 501.

The illustrated envelope tracker 532 includes a multi-stage switching circuit 535. In some embodiments, the multi-stage switching circuit includes a multi-output DC-to-DC converter for producing regulated voltages of different voltage levels, a switch for controlling selection of an appropriate regulated voltage over time according to the envelope signal, and a filter for filtering an output of the switch to generate the power amplifier supply voltage.

The envelope tracker 532 of FIG. 9B illustrates one example of MLS envelope tracking.

Fig. 10 is a schematic diagram of an envelope tracking system 600 according to another embodiment. The envelope tracking system 600 comprises a power amplifier 501 and an envelope tracker 602. The power amplifier 501 amplifies a radio frequency signal 503.

The envelope tracker 602 receives an envelope signal corresponding to the envelope of the radio frequency signal 503. In this example, the envelope signal is differential. In addition, the envelope tracker 602 generates a power amplifier supply voltage V_PAWhich provides power to the power amplifier 501.

The illustrated envelope tracker 602 includes an envelope amplifier 611, a first comparator 621, a second comparator 622, a third comparator 623, an encoding and dithering circuit 624, a multi-output boost switch 625, a filter 626, a switch bank 627, and a capacitor bank 630. The capacitor bank 630 includes a first capacitor 631, a second capacitor 632, and a third capacitor 633. In addition, the switch set 627 includes a first switch 641, a second switch 642, and a third switch 643.

The envelope amplifier 611 amplifies the envelope signal to provide the amplified envelope signal to the first to third comparators 621-623. The first to third comparators 621-623 compare the amplified envelope signal with the first threshold T1, the second threshold T2, and the third threshold T3, respectively. The result of the comparison is provided to the encoding and dithering circuit 624, which processes the result to control the selection of the switches of the switch bank 627. The encoding and dithering circuit 624 may activate switches while using encoding and/or dithering to reduce artifacts (artifacts) caused by opening and closing switches.

Although an example with three comparators is shown, more or fewer comparators may be used. In addition, the encoding and dithering circuit 624 may be omitted to facilitate otherwise controlling the switch banks. In a first example, encoding is used without dithering. In a second example, dithering is used without encoding. In a third example, neither encoding nor dithering is used.

Multiple output boost switch 625 provides battery voltage V based on_BATTTo generate a first regulated voltage V_MLS1A second regulated voltage V_MLS2And a third regulated voltage V_MLS3. Although an example with three regulated voltages is shown, the multi-output boost switch 625 may produce more or fewer regulated voltages. In some embodiments, at least a portion of the regulated voltage is relative to the battery voltage V_BATTAnd (4) rising. In some configurations, the one or more regulated voltages are of a specific battery voltage V_BATTA lower voltage step-down voltage.

Capacitor bank 630 helps stabilize the regulated voltage generated by multi-output boost switch 625. For example, the capacitor 631 and 633 serve as decoupling capacitors.

Filter 626 processes the output of switch set 627 to produce a power amplifier supply voltage V_PA. By controlling the selection of the time dependent switch 641-_PATo track the envelope signal.

Fig. 11A is a schematic diagram of one embodiment of a package module 800. Fig. 11B is a cross-sectional schematic view of the package module 800 taken along line 11B-11B of fig. 11A.

The package module 800 includes an IC or die (die)801, a surface mount component 803, a wire bond 808, a package substrate 820, and an encapsulation structure 840. The package substrate 820 includes pads 806 formed of conductors disposed therein. In addition, wafer 801 includes pads 804, and wire bonds 808 have been used to electrically connect pads 804 of wafer 801 to pads 806 of package substrate 820.

Die 801 includes a power amplifier 846, which may be implemented in accordance with any embodiment herein.

The package substrate 820 may be configured to receive a plurality of components, such as a wafer 801 and surface mount components 803 (which may include, for example, surface mount capacitors and/or inductors).

As shown in fig. 11B, the package module 800 is shown to include a plurality of contact pads 832 disposed on the package module 800 on a side opposite the side on which the die 801 is mounted. Configuring the packaged module 800 in this manner can facilitate connecting the packaged module 800 to a circuit board, such as a phone board of a wireless device. Exemplary contact pads 832 may be configured to provide RF signals, bias signals, one or more power low voltages, and/or one or more power high voltages to wafer 801 and/or surface mount component 803. As shown in fig. 11B, electrical connection between contact pads 832 and wafer 801 may be facilitated by connection vias 833 running through package substrate 820. The connection via 833 may represent an electrical via formed through the package substrate 820, such as a connection via associated with a via and a conductor of a multi-layer laminate package substrate.

In some embodiments, the package module 800 may also include one or more packaging structures to, for example, provide protection to the package module 800 and/or facilitate handling of the package module 800. Such package structures may include an over mold (over mold) or encapsulation structure 840 formed on a package substrate 820, as well as components and one or more dies disposed thereon.

It is to be appreciated that although the package module 800 is described in the context of wire-bond based electrical connections, one or more features of the present application may also be implemented in other package configurations (including, for example, flip-chip configurations).

Fig. 12 is a schematic diagram of one embodiment of a phone pad 900. The phone board 900 includes the module 800 shown in fig. 11A-11B connected thereto. Although not explicitly shown in fig. 12, the phone board 900 may include other components and structures.

Applications of

Some of the embodiments described above have provided examples relating to wireless devices or mobile phones. However, the principles and advantages of these embodiments may be used in any other system or apparatus that requires a power amplifier.

Such an envelope tracker may be implemented in various electronic devices. Examples of the electronic device may include, but are not limited to, a consumer electronic product, a portion of a consumer electronic product, an electronic test device, and the like. Examples of the electronic device may also include, but are not limited to, memory chips, memory modules, circuits of a fiber optic network or other communication network, and disk drive circuits. Consumer electronics products may include, but are not limited to, cell phones, telephones, televisions, computer monitors, computers, handheld computers, Personal Digital Assistants (PDAs), microwave ovens, refrigerators, automobiles, stereos, cassette recorders or players, DVD players, CD players, VCRs, MP3 players, radios, camcorders, cameras, digital cameras, portable memory chips, washing machines, dryers, washer/dryers, copiers, facsimile machines, scanners, multifunction peripherals, wristwatches, clocks, and the like. Further, the electronic device may include an unfinished product.

Conclusion

Unless the context clearly requires otherwise, throughout the description and the claims, the words "comprise", "comprising", and the like are to be construed in an inclusive sense as opposed to an exclusive or exhaustive sense; that is, it is meant to "include, but not limited to". The word "coupled," as used generally herein, means that two or more elements may be connected directly or through one or more intermediate elements. Likewise, the word "connected," as used generally herein, means that two or more elements may be connected directly or through one or more intermediate elements. Moreover, the words "herein," "above," "below," and words of similar importance, when used in this application, shall refer to the entire application, rather than to any particular portions of the application. Where the context permits, words in the above detailed description using the singular or plural form may also include the plural or singular form, respectively. The word "or" refers to a list of two or more items, which word covers all of the following interpretations of the word: any of the items in the list, all of the items in the list, and any combination of the items in the list.

Furthermore, conditional language such as "may", "for example", "in an example", etc., as used herein, unless otherwise stated or otherwise understood from the context used, is generally intended to indicate that certain embodiments include certain features, elements and/or states, while other embodiments do not. Thus, such conditional language is not generally intended to imply that features, elements, and/or states are in any way required by one or more embodiments or that one or more embodiments necessarily include logic for determining, with or without author input or prompting, whether such features, elements, and/or states are to be included or are to be performed in any particular embodiment.

The above detailed description of embodiments of the invention is not intended to be exhaustive or to limit the invention to the precise form disclosed above. While specific embodiments of, and examples for, the invention are described above for illustrative purposes, various equivalent modifications are possible within the scope of the invention, as those skilled in the relevant art will recognize. For example, while processes or blocks are presented in a given order, alternative embodiments may perform routines having steps, or employ systems having blocks, in a different order, and some processes or blocks may be deleted, moved, added, subdivided, combined, and/or modified. Each of these processes or blocks may be implemented in a variety of different ways. Further, while processes or blocks are sometimes shown as being performed in series, these processes or blocks may also be performed in parallel, or may be performed at different times.

The teachings of the invention provided herein are applicable to other systems, not necessarily the systems described above. The elements and acts of the various embodiments described above can be combined to provide further embodiments.

While certain embodiments of the present invention have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the application. Indeed, the novel methods and systems described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the methods and systems described herein may be made without departing from the spirit of the application. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the application.