阅读说明：本技术 一种半导体结构的制备方法 (Preparation method of semiconductor structure ) 是由 程凯 于 2019-05-16 设计创作，主要内容包括：本申请公开了一种半导体结构的制备方法,通过选择性外延生长的方法,不需要对n型半导体层以及p型半导体层刻蚀,避免了刻蚀深度无法控制、刻蚀表面损伤等问题；有效减少栅极漏电,保持沟道区域低电阻,抑制电流崩塌,提高器件可靠性、稳定性。(The application discloses a preparation method of a semiconductor structure, which is characterized in that an n-type semiconductor layer and a p-type semiconductor layer do not need to be etched by a selective epitaxial growth method, so that the problems of uncontrollable etching depth, damaged etching surface and the like are avoided; the grid leakage is effectively reduced, the low resistance of a channel region is kept, the current collapse is restrained, and the reliability and the stability of the device are improved.)