阅读说明：本技术 基于SiC和Si的混合部件和制造方法 (Hybrid component based on SiC and Si and method for producing same ) 是由 中本真由美 于 2020-12-17 设计创作，主要内容包括：本发明提供一种能够不以树脂为介质,并且不受其形态的影响而进行构成的基于SiC和Si的混合部件。用于解决本发明问题的基于SiC和Si的混合部件(SiC/Si混合部件(10))的特征在于：在多晶结构的Si部件(基材(12))的内部分散有片状或粉状的SiC部件(填料(14))。并且,在具有这样的特征的SiC/Si混合部件(10)中,可以采用在其表面上具备SiC涂层(16)的构成。(The invention provides a SiC-and Si-based hybrid component which can be configured without using resin as a medium and without being affected by the form of the component. The hybrid component based on SiC and Si (SiC/Si hybrid component (10)) for solving the problem of the present invention is characterized in that: a sheet-like or powder-like SiC member (filler (14)) is dispersed in the interior of a polycrystalline Si member (base material (12)). In addition, in the SiC/Si hybrid component (10) having such characteristics, a structure in which the SiC coating layer (16) is provided on the surface thereof can be employed.)

1. A hybrid component based on SiC and Si, wherein,

in the polycrystalline Si member, a sheet-like or powder-like SiC member is dispersed.

2. The SiC and Si based hybrid component of claim 1, having a SiC layer formed on a surface thereof.

3. A method of manufacturing a hybrid component based on SiC and Si, comprising:

a preparation step for preparing a Si member in the form of a sheet or powder and a SiC member in the form of a sheet or powder,

A heating step of raising the temperature of the mixture of the Si member and the SiC member to the melting temperature of the Si member, and

and a cooling step of recrystallizing the molten Si member in a state including the SiC member.

4. The method of manufacturing a hybrid component based on SiC and Si according to claim 3, further comprising:

and a stirring step of placing only the Si component and the SiC component prepared in the preparation step into a predetermined container and mixing the Si component and the SiC component in a solid state in the predetermined container.

5. The method for manufacturing a hybrid part based on SiC and Si according to claim 3 or 4, wherein,

in the heating step, the SiC member is dispersed in the Si member by convection of the Si member.

6. The method for producing a hybrid part based on SiC and Si according to any one of claims 3 to 5, which comprises a surface treatment step of forming a SiC coating layer on the surface after the cooling step.

7. The method for producing the SiC-based hybrid part according to any one of claims 3 to 6, wherein,

in the heating step, the Si member is subjected to degassing treatment by applying vibration thereto when being melted.

8. The method for producing the SiC-based hybrid part according to any one of claims 3 to 7, wherein,

in the cooling step, recrystallization is performed at a temperature lowering rate set based on a portion having the largest cross-sectional area and the largest heat capacity among the forms of the mixed member.

Technical Field

The present invention relates to a hybrid component, and particularly to a hybrid component using SiC (silicon carbide) and Si (silicon) as raw materials and a method for manufacturing the same.

Background

SiC (Silicon carbide) which is required to be a semiconductor material and has a high value due to the wide band gap, the thermal conductivity, the height of the dielectric breakdown voltage, and the like cannot be reformed by melting (can be sublimated at a high temperature and then recrystallized), and therefore many products have to be discarded for products which do not have a desired quality in the production process.

Since crystallized SiC cannot be melted by high temperature, it is sometimes pulverized and used as powder. The technique disclosed in patent document 1 is: a SiC/Si composite material is formed by mixing SiC powder into a thermosetting resin, heating and pressing the mixture to form a porous member, and impregnating Si (Silicon) into the porous member.

Since the SiC/Si composite material thus configured is lighter, has higher specific stiffness, and has a smaller thermal expansion coefficient than a metal material, the demand for the composite material as a structural material in the industrial field and the like is increasing.

Documents of the prior art

Patent document

Patent document 1: japanese patent laid-open publication No. 2011-73906

Disclosure of Invention

Technical problem to be solved by the invention

According to the technique disclosed in patent document 1, there is a possibility that the discarded SiC parts can be reused. However, the technique disclosed in patent document 1 employs a means of impregnating Si while forming a porous resin using a resin as a medium. Therefore, the heat resistance is low as compared with SiC or Si, and there is a risk of deterioration with time. Further, since the structure is adopted in which Si is impregnated into the inside by impregnation, there is a problem in that it is difficult to form a solid material having a thickness.

Therefore, an object of the present invention is to provide a SiC-Si based hybrid component that can be configured without using a resin as a medium and without being affected by its form, and a method for manufacturing the same.

Means for solving the problems

In order to achieve the above object, a hybrid component based on SiC and Si according to the present invention is characterized in that: the SiC member in the form of a flake or powder is dispersed in the Si member having a polycrystalline structure.

Also, the SiC and Si based hybrid component having the characteristics described above may be formed with a Si C layer on the surface. By having such a feature, the density of the surface of the mixing member can be increased.

In order to achieve the above object, a method for manufacturing a hybrid component made of SiC and Si according to the present invention includes: the method for manufacturing the SiC member includes a preparation step of preparing a Si member made into a sheet or powder and a SiC member made into a sheet or powder, a heating step of raising a temperature of a mixture of the Si member and the SiC member to a melting temperature of the Si member, and a cooling step of recrystallizing the melted Si member in a state of including the SiC member.

The method for manufacturing a hybrid component based on SiC and Si having the above features may further include: and a stirring step of placing only the Si component and the SiC component prepared in the preparation step into a predetermined container and mixing the Si component and the SiC component in a solid state in the predetermined container. By having such a feature, the mixed state (dispersed state) of SiC with respect to Si becomes favorable.

In the method of manufacturing a hybrid component made of SiC and Si having the above-described features, the SiC component may be dispersed in the Si component by convection of the Si component in the heating step. By having such a feature, SiC can be dispersed in Si even if the stirring step is omitted.

In the method for manufacturing a hybrid component based on SiC and Si having the above-described features, a surface treatment step of forming a SiC coating layer on the surface may be provided after the cooling step. By having such a feature, the surface densification of the SiC-Si based hybrid member can be improved.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the SiC-Si based hybrid component having the above features and the manufacturing method thereof, it is possible to construct the hybrid component without using a resin as a medium and without being affected by the form thereof.

Drawings

FIG. 1 is a schematic view showing the structure of a hybrid component made of SiC and Si according to an embodiment.

Fig. 2 is a schematic view showing an example of a case where a SiC coating layer is provided on a surface of a hybrid component based on SiC and Si according to an embodiment.

Fig. 3 is a diagram for explaining preparation steps in the method for manufacturing a hybrid component made of SiC and Si according to the embodiment.

Fig. 4 is a diagram for explaining a stirring step in a preparation step in the method for producing a hybrid component made of SiC and Si according to the embodiment.

Fig. 5 is a diagram for explaining a heating step in the method for producing a hybrid component made of SiC and Si according to the embodiment.

Fig. 6 is a view showing a state where the container is removed after the cooling step in the method for producing a hybrid component made of SiC and Si according to the embodiment is completed.

Detailed description of the invention

Hereinafter, embodiments of the SiC-Si hybrid component according to the present invention will be described in detail with reference to the drawings. The embodiments described below are part of preferable embodiments for carrying out the present invention, and may be considered part of the present invention even if part of the configuration is modified within a range in which the effects thereof can be exhibited.

[ SiC/Si hybrid component ]

First, the structure of a hybrid component made of SiC and Si (hereinafter referred to as a SiC/Si hybrid component 10) according to the present embodiment will be described with reference to fig. 1. Although the form of the optical member is rectangular (cubic) in fig. 1, the appearance is not limited.

The SiC/Si hybrid component 10 according to the present embodiment is a hybrid component in which the base material 12 is Si and the filler 14 is SiC. The SiC/Si hybrid component 10 of the form shown in fig. 1 is a hybrid component in which sheet-like SiC pieces are dispersed in the interior of polycrystallized Si. The distribution density of SiC as filler 14 is not limited, and may vary depending on the desired characteristics of SiC/Si hybrid component 10, and the like.

For example, when the density of SiC is increased, a component having characteristics such that the hardness, thermal conductivity, oxidation resistance, chemical resistance, and plasma etching resistance are improved, and the fracture toughness value (cleavage property — brittleness) of Si is decreased is formed. On the other hand, when the density of SiC is decreased, a member having characteristics such as improved workability and reduced weight is formed as compared with a SiC single product.

[ Effect ]

As described above, the SiC/Si hybrid component 10 according to the present embodiment can arbitrarily adjust the characteristics by the mixing ratio of the base material 12 and the filler 14. Further, since the constituent members are only Si and SiC, heat resistance can be improved as compared with the conventional technique in which SiC is formed in a shape using a resin as a medium.

In SiC/Si hybrid component 10 having such a configuration, SiC coating 16 may be provided on the surface of SiC/Si hybrid component 10, as shown in fig. 2. By adopting such a configuration, the density of the surface can be improved.

[ modified examples ]

In the above embodiment, SiC dispersed as filler 14 in Si as base material 12 is described as a flake. However, SiC may also be in powder form. By making the dispersed SiC powder (powder), the volume of each SiC can be made small. This can reduce the influence of stress due to the difference in thermal expansion coefficient from Si as the base material.

Further, by making SiC as filler 14 powdery, the mixing ratio of SiC can be greatly increased.

[ production method 1]

Next, a method 1 for manufacturing a SiC/Si hybrid component according to an embodiment will be described with reference to fig. 3 to 6. First, as shown in fig. 3, a sheet-like Si (sheet-like base material 12a) and a sheet-like SiC (filler 14) are prepared and put into a container 18. Here, the container 18 is composed of a member having heat resistance of not less than the melting point (1414 ℃) of Si as the sheet-like base material 12a, and not causing deformation or property change. For example, quartz (softening point of about 1600 ℃ C. to 1700 ℃ C.), graphite, sintered SiC, CVD-SiC, etc. may be used.

Next, as shown in fig. 4, the sheet-like base material 12a put into the container 18 and the filler 14 are mixed. By mixing the sheet-like base material 12a in a solid state with the filler 14, the mixing state of the base material 12 and the filler 14 (the dispersed state of the filler 14) becomes favorable when the sheet-like base material 12a is melted (preparation step, stirring step).

Next, the sheet-like base material 12a and the filler 14 put in the container 18 are heated. The heating is preferably performed in an inert atmosphere. The heating temperature is set to a temperature at which the melting point (1414 ℃) of Si as the sheet-like base material 12a is not less than the softening point of the container 18 (for example, 1600 to 1700 ℃ in the case where the container 18 is made of quartz) and the sublimation point (for example, 2000 ℃ or more) of SiC as the filler 14. When the sheet-like base material 12a is melted, the degassing treatment may be performed by applying vibration using a vibration device, an ultrasonic device (both not shown), or the like (heating step: see fig. 5).

After melting the sheet-like base material 12a and dispersing the filler 14 in the base material 12, the base material 12 in the molten state is cooled and recrystallized (solidified). The cooling rate during cooling varies depending on the form, heat capacity, and the like of the SiC/Si hybrid part 10, and cannot be uniformly specified, and it is sufficient to set the cooling rate to a rate that is determined to be suitable for a portion having the largest cross-sectional area and the largest heat capacity in a desired form. This is because, if the cooling rate is set in accordance with a portion having a small heat capacity, a temperature difference between the inside and the outside becomes large in a portion having a large heat capacity, which causes generation of cracks and the like. The recrystallized Si (substrate 12) has a polycrystalline structure (cooling step).

After the cooling step is completed, the container 18 is removed, thereby completing the SiC/Si hybrid component 10 (see fig. 6). Here, if necessary, the SiC/Si hybrid component 10 may be subjected to surface treatment such as cutting, polishing, coating, and the like.

[ Effect ]

According to the SiC/Si hybrid component 10 manufactured through such a process, since it can be configured without using a resin as a medium, good heat resistance can be obtained. Further, since Si as the base material 12 is melted and mixed into Si as the filler 14, the filler 14 can be dispersed in the base material 12 without being affected by the form of the SiC/Si hybrid component 10.

[ production method 2]

In the preparation step of the above-described method 1, the stirring step of mixing the sheet-like base material 12a and the filler 14 in the container 18 is mainly described. However, the stirring step is not essential as long as the filler 14 can be dispersed in the base material 12. For example, convection occurs in the molten base material 12 (liquid Si) in the heating step. If the filler 14 can be dispersed in the base material 12 by this convection, the stirring step can be omitted. It is considered that the dispersion of the filler 14 by convection is effective in the case where the filler 14 is in a powdery state.

Industrial applicability

In the above embodiment, it is described that when the SiC/Si hybrid component 10 is constituted, the filler 14 is uniformly mixed in the base material 12. However, the distribution ratio of the filler 14 may intentionally be made uneven. For example, in a member (such as an etching ring) requiring etching resistance, this characteristic can be improved by concentrating SiC as filler 14 on an etched side surface or a specific portion.

Description of the symbols

10SiC/Si hybrid parts, 12 substrates, 12a sheet substrates, 14 fillers, 16SiC coatings, 18 containers.