阅读说明：本技术 Led芯片及其制备方法和封装方法 (LED chip and preparation method and packaging method thereof ) 是由 张世诚 于 2021-09-14 设计创作，主要内容包括：本申请涉及一种LED芯片及其制备方法和封装方法,该LED芯片,包括衬底、形成于衬底的发光部,以及形成于发光部的电极；发光部的尺寸小于衬底,衬底未覆盖发光部的区域涂覆吸光介质。上述LED芯片,在衬底上未覆盖发光部的区域涂覆吸光介质,可以避免封装过程中基板上的焊盘和基板本身超出发光部而影响整体的颜色一致性,使得最终制成的显示模组的颜色差异性减小,有利于提升显示效果。(The application relates to an LED chip, a preparation method and a packaging method thereof, wherein the LED chip comprises a substrate, a light-emitting part formed on the substrate, and an electrode formed on the light-emitting part; the light-emitting part is smaller in size than the substrate, and the region of the substrate not covering the light-emitting part is coated with a light-absorbing medium. According to the LED chip, the light absorption medium is coated in the area which is not covered with the light emitting part on the substrate, so that the bonding pad on the substrate and the substrate are prevented from exceeding the light emitting part in the packaging process to influence the overall color consistency, the color difference of the finally manufactured display module is reduced, and the display effect is favorably improved.)

1. An LED chip comprising a substrate, a light emitting portion formed on the substrate, and an electrode formed on the light emitting portion; the size of the light emitting part is smaller than that of the substrate, and a light absorbing medium is coated on the area, not covered by the light emitting part, of the substrate.

2. The LED chip of claim 1, wherein said light absorbing medium is black ink, black hot melt adhesive or black oxide.

3. The LED chip of claim 1, wherein the thickness of the light-absorbing medium is consistent with the thickness of the light-emitting portion.

4. An LED chip preparation method for preparing the LED chip according to any one of claims 1 to 3, the LED chip preparation method comprising:

growing an epitaxial layer on a substrate;

patterning the epitaxial layer to prepare a light emitting part; the light emitting part array is distributed on the substrate;

coating a light-absorbing medium on the substrate in the area not covered by the light-emitting part;

manufacturing an electrode on the light emitting part to obtain a semi-finished chip;

and cutting the semi-finished product chip to obtain the LED chip.

5. The method of claim 4, wherein the substrate is a sapphire substrate, and the patterning of the epitaxial layer after the growth of the epitaxial layer on the substrate and before the fabrication of the light-emitting portion further comprises:

and carrying out back thinning and polishing on the substrate.

6. The method according to claim 4, wherein the gap between the light emitting parts is greater than or equal to a preset threshold.

7. The method for preparing the LED chip according to claim 4, wherein the step of cutting the semi-finished chip to obtain the LED chip comprises the following steps:

and cutting the semi-finished product chip along the symmetrical lines among different light emitting parts to obtain the LED chip.

8. The method according to any one of claims 4 to 7, wherein the step of coating a light absorbing medium on the substrate in the region not covering the light emitting part comprises:

and coating a light absorbing medium on the substrate in the area not covered by the light emitting part by using a high-precision ink-jet printer, a mask shielding spraying process, a silk-screen process or a photoetching process.

9. An LED chip packaging method for packaging the LED chip of claim 1 or 2, comprising:

solder printing is carried out on the lamp surface of the PCB substrate;

fixing the LED chip on the lamp surface of the PCB substrate in a die bonding manner;

electrically connecting the LED chip with the PCB substrate by soldering;

the PCB substrate is covered by packaging glue through compression molding, and packaging protection is completed;

and cutting off the process edge of the packaged PCB substrate to obtain the finished product display module.

10. The method for packaging an LED chip according to claim 9, wherein the packaging adhesive is a transparent adhesive, or a black-doped epoxy adhesive or a silica gel.

Technical Field

The present disclosure relates to the field of light-emitting diode (LED) technologies, and in particular, to an LED chip, and a method for manufacturing the LED chip and a method for packaging the LED chip.

Background

The LED chip is mainly applied to ultra-large screen high-definition display, such as monitoring and commanding, high-definition broadcasting, high-end cinema, medical diagnosis, advertisement display, conference exhibition, office display, virtual reality and other fields, and has high requirements on display effects.

In the traditional LED chip, in the packaging process, the whole color consistency can be influenced by the ink color difference of the bonding pad of the substrate and the substrate, so that the color difference of the display unit is caused, and the display effect of the display unit is influenced. Therefore, the traditional LED chip has the problem of poor color consistency after packaging.

Disclosure of Invention

Therefore, it is necessary to provide an LED chip with good color consistency, and a method for manufacturing and packaging the LED chip.

An LED chip includes a substrate, a light emitting portion formed on the substrate, and an electrode formed on the light emitting portion; the size of the light emitting part is smaller than that of the substrate, and a light absorbing medium is coated on the area, not covered by the light emitting part, of the substrate.

In one embodiment, the light absorbing medium is black ink, black hot melt adhesive, or black oxide.

In one embodiment, the thickness of the light absorbing medium is the same as the thickness of the light emitting part.

An LED chip preparation method is used for preparing the LED chip, and comprises the following steps:

growing an epitaxial layer on a substrate;

patterning the epitaxial layer to prepare a light emitting part; the light emitting part array is distributed on the substrate;

coating a light-absorbing medium on the substrate in the area not covered by the light-emitting part;

manufacturing an electrode on the light emitting part to obtain a semi-finished chip;

and cutting the semi-finished product chip to obtain the LED chip.

In one embodiment, the substrate is a sapphire substrate, and the patterning of the epitaxial layer after the growth of the epitaxial layer on the substrate and before the preparation of the light emitting part further includes:

and carrying out back thinning and polishing on the substrate.

In one embodiment, the gap between the light emitting parts is greater than or equal to a preset threshold.

In one embodiment, the cutting the semi-finished chip to obtain an LED chip includes:

and cutting the semi-finished product chip along the symmetrical lines among different light emitting parts to obtain the LED chip.

In one embodiment, the coating of a light-absorbing medium on the substrate in the region not covering the light-emitting part includes:

and coating a light absorbing medium on the substrate in the area not covered by the light emitting part by using a high-precision ink-jet printer, a mask shielding spraying process, a silk-screen process or a photoetching process.

An LED chip packaging method is used for packaging the LED chip, and comprises the following steps:

solder printing is carried out on the lamp surface of a PCB (Printed Circuit Board) substrate;

fixing the LED chip on the lamp surface of the PCB substrate in a die bonding manner;

electrically connecting the LED chip with the PCB substrate by soldering;

the PCB substrate is covered by packaging glue through compression molding, and packaging protection is completed;

and cutting off the process edge of the packaged PCB substrate to obtain the display module.

In one embodiment, after the LED chip is electrically connected to the PCB substrate by soldering, the PCB substrate is covered with an encapsulation adhesive by compression molding, and before the encapsulation protection is completed, the method further includes:

and lightening the LED chip, aging for a preset time, and overhauling.

In one embodiment, the encapsulation adhesive is transparent colloid, or epoxy resin adhesive or silica gel doped with melanin.

According to the LED chip, the light absorbing medium covers the area which is not covered with the light emitting part on the substrate, so that the bonding pad on the substrate and the substrate are prevented from exceeding the light emitting part in the packaging process to influence the overall color consistency, the color difference of the finally manufactured display module is reduced, and the display effect is favorably improved.

Drawings

FIG. 1 is a schematic diagram of an embodiment of an LED chip;

FIG. 2 is a flow chart of a method for fabricating an LED chip according to an embodiment;

FIG. 3 is a schematic illustration of a semi-finished product after application of a light-absorbing medium;

FIG. 4 is a flow chart of a method for fabricating an LED chip according to another embodiment;

FIG. 5 is a flow chart of a method for packaging an LED chip according to an embodiment;

FIG. 6 is a schematic diagram illustrating an embodiment of a display module;

fig. 7 is a flowchart of a method for packaging an LED chip in another embodiment.

Detailed Description

To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Embodiments of the present application are set forth in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.

In the drawings, the size of layers and regions may be exaggerated for clarity. It will be understood that when a layer or element is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. In addition, it will also be understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present. Like reference numerals refer to like elements throughout.

In the following embodiments, when layers, regions or elements are "connected", it may be interpreted that the layers, regions or elements are not only directly connected but also connected through other constituent elements interposed therebetween. For example, when layers, regions, elements, etc. are described as being connected or electrically connected, the layers, regions, elements, etc. may be connected or electrically connected not only directly or directly but also through another layer, region, element, etc. interposed therebetween.

It will be further understood that the terms "comprises/comprising," "includes" or "including," etc., specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

As mentioned in the background art, the LED chip in the prior art has the problem of poor color consistency, and the inventor researches and discovers that the problem is most prominent in the field of Mini LED chips (LED chips with the size between 50 and 200 μm), and the reason of the problem is that: for guaranteeing that welding strength meets the requirements, the pad size on the PCB base plate can be greater than the electrode of LED chip on the one hand, on the other hand can suitably increase the brazing filler metal quantity when the welding, thus, the brazing filler metal that uses among PCB pad and the welding process can surpass the sheltering from of luminescent layer on the LED chip, expose outside influence contrast, in addition the chip is placed the position, the angle can't guarantee whole unanimity, and lead to not sheltering from PCB pad and the brazing filler metal figure of exposing also inconsistent, and then the inconsistent production of reflection of light is dark color difference, this contrast and the uniformity that will seriously influence display module. The problem can be weakened by adding melanin into the packaging adhesive, but the effect is not good, on one hand, the distribution of the melanin in the packaging adhesive is not uniform, and the consistency is poor; on the other hand, the soldering tin at the welding pad is difficult to shield by ink jet or black glue spraying in the prior art, and the ink or the black glue on the side surface of the chip has different climbing heights, so that adverse effects are brought to the side light-emitting of the chip. Based on this, the application provides an LED chip, a manufacturing method and a packaging method thereof, which can be applied to the field of conventional LED chips and can also be applied to the field of Mini LED chips, specifically, a light absorbing medium is coated around a light emitting part before the LED chips are cut, so that a PCB bonding pad and brazing filler metal can be better shielded, the contrast and ink color consistency of a display module are improved, and the display effect is improved.

In one embodiment, as shown in fig. 1, there is provided an LED chip including a substrate 100, a light emitting portion 200 formed on the substrate 100, and an electrode 300 formed on the light emitting portion 200; the light emitting part 200 is smaller in size than the substrate 100, and a region of the substrate 100 not covering the light emitting part 200 is covered with the light absorbing medium 400.

The substrate 100 is a growth substrate for the light emitting section 200, and the type thereof is determined by the desired light emitting wavelength. For example, for an LED chip of GaN semiconductor material such as blue LED or white LED, sapphire, SiC, Si, or other types of substrates are used; for an LED chip using an AlInGaP-based material such as a red LED, a GaAs-type substrate is used. In one embodiment, the substrate is a sapphire substrate, so that the production technology is mature, the device quality is good, the stability of sapphire is good, the sapphire substrate can be applied to a high-temperature growth process, the mechanical strength is high, the processing and the cleaning are easy, and the improvement of the performance of an LED chip is facilitated. Further, the light emitting section 200, the electrode 300, and the light absorbing medium 400 are located on the same side of the substrate 100. The region of the substrate 100 not covering the light-emitting portion 200 means a region of the substrate 100 not covering the light-emitting portion 200 because the light-emitting portion 200 is smaller in size than the substrate 100 on the side where the light-emitting portion 200 is prepared.

The light emitting section 200 is formed by patterning an epitaxial layer grown on the substrate 100 under appropriate temperature conditions. In one embodiment, the graphic processing process specifically includes: cleaning → plating of transparent electrode layer → patterned photoetching of transparent electrode → corrosion → stripping of photoresist → patterned photoetching of platform → dry etching → stripping of photoresist → annealing → SiO₂Deposition → window pattern lithography → SiO₂Etching → removing photoresist → N pole pattern lithography → precleaning → plating → peeling → annealing → P pole pattern lithography → plating → peeling, wherein the transparent electrode layer is used as a current diffusion layer and in ohmic contact with the semiconductor layer and the electrode 300, which is beneficial for improvingThe current density. After patterning, a light emitting part 200 having a P-N junction and capable of emitting visible light waves when a voltage is applied is formed.

The electrode 300 is a bridge for establishing electrical connection between the light emitting part 200 and the PCB substrate. The number, shape and material of the electrodes 300 are not exclusive, for example, the number may be two or three, the shape may be round, square or oval, and the like, and the material may be Ag, Au, Ni — Au alloy or ITO (Indium Tin Oxide). Further, the electrode 300 may not be located exclusively, and may be provided, for example, at the edge of the light-emitting portion 200 or in the middle of the light-emitting portion 200. In one embodiment, the electrodes 300 are square electrodes, and two electrodes are disposed at the edge of the light emitting portion 200 in the length direction, which is beneficial to enhance the bonding strength between the chip and the substrate. Specifically, the electrode layer may be formed by evaporation or deposition, and patterning may be performed by photolithography and etching to obtain the desired electrode 300.

The light absorbing medium 400 is a medium material having a large absorption coefficient value, which is a medium material in which a light wave is greatly attenuated when propagating in the medium. In general, the absorption coefficient of a black substance is relatively large. Further, the light absorbing medium 400 may be black ink, black hot melt adhesive or black oxide, or may be nano paint, or an ultra-black material made of carbon nanotubes.

Specifically, the light absorbing medium 400 may be coated on the substrate 100 in a region not covered with the light emitting part 200 using a high precision inkjet printer, a mask-masking spray process, a screen printing process, or a photolithography process. Further, in order to ensure smooth proceeding of the subsequent soldering work, the thickness of the light-absorbing medium 400 should be smaller than the sum of the thicknesses of the light-emitting part 200 and the electrode 300. In one embodiment, the thickness of the light-absorbing medium 400 is the same as the thickness of the light-emitting part 200, so that adverse effects due to light emitted from the light-emitting part 200 can be avoided, which is advantageous in further improving the display effect. Specifically, the thickness of the light-absorbing medium 400 is equal to the thickness of the light-emitting part 200, and the difference between the thicknesses may be within an allowable error range.

It is understood that the LED chip may further include two or more light emitting portions 200, and a plurality of electrodes 300 provided corresponding to the light emitting portions 200. The light emitting parts 200 are all disposed on the substrate 100, and the light absorbing medium 400 is coated on the substrate 100 at the gaps between the different light emitting parts.

Above-mentioned LED chip, the region that does not cover luminescent part 200 on the substrate 100 covers has extinction medium 400, can avoid pad, brazing filler metal on the base plate in the packaging process and base plate itself to surpass the luminescent part and influence holistic color uniformity for the color difference of the display module assembly who finally makes reduces, is favorable to promoting the colour homogeneity, and then promotes display effect.

Based on the same inventive concept, the application also provides an LED chip preparation method, which is used for preparing the LED chip. In one embodiment, as shown in fig. 2, the preparation method includes steps S100 to S600.

Step S100: an epitaxial layer is grown on a substrate.

The substrate is a growth substrate, and the type of the substrate is determined by the desired light emission wavelength. For example, for an LED chip of GaN semiconductor material such as blue LED or white LED, sapphire, SiC, Si, or other types of substrates are used; for an LED chip using an AlInGaP-based material such as a red LED, a GaAs-type substrate is used. An epitaxial layer is a structure grown and deposited on the surface of a substrate under appropriate temperature conditions. By controlling the doping type and the doping concentration of the epitaxial layer, a p-type or n-type epitaxial layer can be obtained. Further, the thickness of the epitaxial layer is not exclusive and may be, for example, 0.5 to 5 microns.

Step S300: patterning the epitaxial layer is performed to prepare a light emitting part.

The light emitting unit is a structure that can emit visible light waves when a voltage is applied. The array of light emitting sections is distributed over the substrate, i.e. there is a certain gap between different light emitting sections. In one embodiment, the gap between the light emitting portions is greater than or equal to a preset threshold. The predetermined threshold may be 30 microns, 35 microns, or 40 microns. The gap between the increase illuminating part has increased the operating space of follow-up cutting on the one hand, is favorable to promoting the cutting yield, and on the other hand can shelter from PCB pad and brazing filler metal better because follow-up processing procedure can be with the clearance coating extinction medium between the illuminating part, is favorable to further promoting display module's contrast and black consistency. Specifically, the epitaxial layer is patterned by a semiconductor process such as photolithography and etching to prepare a light emitting portion.

In one embodiment, the graphic processing process specifically includes: cleaning → plating of transparent electrode layer → patterned photoetching of transparent electrode → corrosion → stripping of photoresist → patterned photoetching of platform → dry etching → stripping of photoresist → annealing → SiO₂Deposition → window pattern lithography → SiO₂Etching → removing photoresist → N pole pattern photo-etching → pre-cleaning → coating → stripping → annealing → P pole pattern photo-etching → coating → stripping, wherein the transparent electrode layer is used as a current diffusion layer and is in ohmic contact with the semiconductor layer and the electrode, which is beneficial to improving the current density. After the patterning, a light emitting part having a P-N junction and capable of emitting visible light waves after voltage application is formed.

Step S400: a light-absorbing medium is applied to the substrate in the areas not covered by the light-emitting parts.

The light absorption medium refers to a medium material which can greatly attenuate light waves when the light waves propagate in the medium, namely, the absorption coefficient value is large. In general, the absorption coefficient of a black substance is relatively large. Further, the light absorption medium can be black ink, black hot melt adhesive or black oxide, and can also be nano paint, or an ultra-black material made of carbon nano tubes. In addition, in one embodiment, the thickness of the light absorbing medium is consistent with that of the light emitting layer, so that the light emitted from the light emitting part in the side direction can be absorbed, and the display effect is further improved. As shown in fig. 3, is a semi-finished product after coating with a light-absorbing medium. In the figure, 100 denotes a substrate, 200 denotes a light-emitting portion, and 400 denotes a light-absorbing medium.

Specifically, a light absorbing medium may be coated on a region of the substrate not covered with the light emitting part using a high precision inkjet printer, a mask-masking spray process, a screen printing process, or a photolithography process. The high-precision ink-jet printer is also called a high-precision microelectronic ink-jet printer, has the characteristics of high mechanical strength, good stability, accurate motion precision, strong system compatibility and the like, is widely applied to the fields of printed electronics, flexible electronics, Organic electronics, bioelectronics, thin film packaging printing, OLED (Organic Light-Emitting Diode) pixel point printing and the like, and can directly jet ink onto a printing stock to realize the manufacture of a required structural layer. The ink may be an organic solvent or aqueous solvent based ink, or may be a nanoparticle ink. The mask shielding spraying process is a process of setting a mask between a spray head and a printing stock and further selectively spraying the printing stock. The specific process of the silk-screen process comprises the following steps: taking a silk screen as a plate base, and preparing a silk screen printing plate with patterns by a photosensitive plate making method; then, printing ink is printed by utilizing the basic principle that partial meshes of the screen printing plate can penetrate ink and partial meshes of the non-pattern can not penetrate ink; when printing, ink is poured into one end of the screen printing plate, a scraper plate is used for applying a certain pressure to the ink position on the screen printing plate, meanwhile, the scraper plate moves towards the other end of the screen printing plate at a constant speed, and the ink is extruded onto a printing stock from meshes of the image-text part by the scraper plate in the moving process. The silk-screen printing process is suitable for various types of printing ink, is not limited by the size and the shape of a printing stock, and has the advantages of convenience in plate making and low cost. The photoetching process is a process of etching a geometric figure structure on a photoresist layer by utilizing exposure and development, and then transferring a figure on a photomask to a substrate through an etching process, and has the advantage of high positioning precision.

Step S500: and manufacturing an electrode on the light emitting part to obtain a semi-finished chip.

Wherein, the electrode luminous part and the PCB substrate establish an electrically connected bridge. The number, shape and material of the electrodes are not unique, for example, the number of the electrodes can be two or three, the shape can be round, square or oval, and the material can be Ag, Au, Ni-Au alloy or ITO (Indium Tin Oxide). Specifically, an electrode layer can be generated through an evaporation or deposition process, and patterning is completed through photoetching and etching to manufacture a required electrode, so that a semi-finished chip is obtained.

Step S600: and cutting the semi-finished product chip to obtain the LED chip.

Specifically, each LED chip includes one or more light emitting portions, and thus, the semi-finished chips need to be cut to separate different LED chips. In order to avoid damage to the light emitting parts during dicing, dicing is generally performed at the gaps between the light emitting parts. In one embodiment, the semi-finished chip is cut along the symmetry line between different light emitting parts to obtain the LED chip, so that the light emitting parts are prevented from being cut due to cutting alignment errors, and the cutting yield is improved.

Further, after the dicing, the LED chip is subjected to an appearance inspection for subsequent work. Specifically, a chip having no loss of the light absorbing medium around the light emitting section may be determined as a good chip, and a chip having a loss of the light absorbing medium around the light emitting section may be determined as a defective chip. Since the light absorbing medium is usually black and has a high contrast, the light absorbing medium is coated around the light emitting part, and the visual inspection efficiency can be improved.

According to the LED chip preparation method, the light absorption medium is coated on the substrate in the area not covered by the light emitting part, so that the phenomenon that the bonding pad, the brazing filler metal and the substrate on the substrate exceed the light emitting part in the packaging process to influence the overall color consistency can be avoided, and the finally manufactured display module is smaller in color difference, more uniform and consistent in color and better in display effect.

In one embodiment, the substrate is a sapphire substrate, as shown in fig. 4, after step S100 and before step S300, the method further includes step S200: and carrying out back thinning and polishing on the substrate.

Because the heat conductivity of sapphire is not good, and when using the LED chip, can conduct a large amount of heats, for preventing that the too high temperature rise of LED chip active area from producing the influence to its light output characteristic and life-span, need carry out the back attenuate to the sapphire substrate to improve the heat dispersion of device. In addition, since the mohs hardness of sapphire reaches 9.0, the thickness of the substrate needs to be reduced to a certain degree in order to meet the requirements of subsequent processes such as scribing, breaking and the like. The thinned back surface of the substrate has a surface damage layer, and the thinned epitaxial wafer is bent and deformed due to residual stress and is easily broken in a subsequent process, so that the yield is affected. Therefore, the back surface of the substrate is polished after thinning to remove the surface damage layer and eliminate the residual stress. Specifically, a precision polisher can be used to back-thin and polish the substrate.

In the embodiment, the sapphire substrate is used, so that the production technology is mature, the device quality is good, the stability of sapphire is good, the sapphire substrate can be applied to a high-temperature growth process, the mechanical strength is high, the processing and the cleaning are easy, and the improvement of the performance of an LED chip is facilitated.

Based on the same inventive concept, the application also provides an LED chip packaging method, which is used for packaging the LED chip. In one embodiment, as shown in fig. 5, the LED chip packaging method includes steps S20 to S70.

Step S20: and printing solder on the lamp surface of the PCB substrate.

The PCB substrate is used as a driving device of the LED chip and used for providing driving voltage for the light emitting part. The PCB substrate comprises a driving surface and a lamp surface, the driving surface is used for welding a driving circuit, and the lamp surface is used for welding an LED chip. Specifically, the solder may be a solder paste or a tin-based alloy. The method for printing the solder on the lamp surface of the PCB substrate can be steel mesh printing or dispensing by a dispenser.

Further, in one embodiment, the solder printing is preceded by: and welding the devices in the driving circuit to the driving surface of the PCB substrate. The devices in the driving Circuit include an IC (Integrated Circuit) control chip, an IC memory chip, a resistor, a capacitor, a connector, and the like. Specifically, the bonding of the driving Surface device may be performed by an SMT (Surface mount Technology) process.

Step S30: and fixing the LED chip on the lamp surface of the PCB substrate.

The Die attach, also called a mounting sheet or Die Bond, is a process of bonding a wafer to a designated region of a support through a glue (generally, a conductive glue or an insulating glue for an LED chip) to form a thermal or electrical path, which provides conditions for subsequent connection. Specifically, after the PCB substrate printed with the solder is detected, the LED chip can be die-bonded onto the lamp surface of the PCB substrate by using a die bonding machine.

Step S40: and electrically connecting the LED chip and the PCB substrate by welding.

Specifically, the soldering between the LED chip and the PCB substrate may be completed by reflow soldering. Wherein, the reflow soldering can be vacuum reflow soldering or nitrogen reflow soldering to improve the soldering quality.

Step S60: and covering the PCB substrate with the packaging glue by compression molding to finish packaging protection.

The packaging adhesive can be transparent colloid, or epoxy resin adhesive or silica gel doped with melanin. Compression molding (also called compression molding or compression molding) is an operation process of putting powdery, granular or fibrous materials into a mold cavity at a molding temperature, closing the mold and pressurizing to mold and solidify the materials. Compression moulding can be used for both thermoset plastics, thermoplastics and rubber materials. Specifically, a special jig can be used to perform compression molding on the packaging adhesive, so that the packaging adhesive covers the PCB substrate to complete packaging protection. It is understood that the number of layers of the encapsulating adhesive is not exclusive and the materials used in the layers may be the same or different. For example, epoxy resin glue or silica gel doped with melanin can be used to fill the area between the LED chips, and then the transparent glue is used to cover the whole PCB substrate, thereby completing the whole package protection.

Step S70: and cutting off the process edge of the packaged PCB substrate to obtain the display module.

The display module can be a monochrome module, a dual-color module or a full-color module. In one embodiment, the display module is a COB (Chip On Board) module, which has a good heat dissipation effect. Specifically, because the edge is prone to have defects such as poor molding in the manufacturing process of the preceding steps, a process edge is usually designed on the PCB substrate. After packaging, cutting off the process edge of the packaged PCB substrate, as shown in fig. 6, a finished display module can be obtained, where 1 is a packaging adhesive and 2 is an LED chip.

According to the LED chip packaging method, the light absorbing medium is coated on the LED chip in the area, not covered by the light emitting part, on the substrate, so that the bonding pad, the brazing filler metal and the substrate on the substrate can be prevented from exceeding the light emitting part in the packaging process to influence the overall color consistency, and the finally manufactured display module is smaller in color difference, more uniform and consistent in color and better in display effect.

In one embodiment, as shown in fig. 7, after step S40 and before step S60, the method further includes step S50: and (4) lighting the LED chip, aging for a preset time, and overhauling. The preset time is not exclusive and may be determined according to the specific type of the LED chip, and may be, for example, 3 hours, 4 hours, or 5 hours. Specifically, after welding and before packaging, the LED chips are lightened, the LED chips with poor light-emitting performance can be screened out for aging preset time, and accordingly the LED chips are subjected to crystal removal and repair, and the reliability of the display module is improved.

It should be understood that, although the steps in the flowcharts of the figures are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least some of the steps in the figures may include multiple steps or multiple stages, which are not necessarily performed at the same time, but may be performed at different times, which are not necessarily performed in sequence, but may be performed alternately or at least partially in sequence with other steps or other steps.

The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above examples only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.