阅读说明：本技术 一种具有不同取向的辐射检测器的图像传感器 (Image sensor with differently oriented radiation detectors ) 是由 曹培炎 刘雨润 于 2018-09-07 设计创作，主要内容包括：本文公开一种图像传感器(9000),其包括：第一辐射检测器(100A)和第二辐射检测器(100B),其分别包括一个平面表面(103A,103B),所述平面表面(103A,103B)配置成接收来自辐射源(109)的辐射；其中所述第一辐射检测器(100A)的所述平面表面(103A)与所述第二辐射检测器(100B)的所述平面表面(103B)不平行；其中所述第一辐射检测器(100A)和所述第二辐射检测器(100B)配置成相对于所述辐射源(109)移动到多个位置；其中所述图像传感器(9000)配置成,通过使用所述第一辐射检测器(100A)和所述第二辐射检测器(100B)并与所述辐射一起,分别在如上所述位置捕获场景(50)的部分的图像,并配置成通过拼接所述各个部分的图像而形成所述场景(50)的一个图像。(Disclosed herein is an image sensor (9000) comprising: a first radiation detector (100A) and a second radiation detector (100B) each comprising a planar surface (103A, 103B), the planar surfaces (103A, 103B) being configured to receive radiation from a radiation source (109); wherein the planar surface (103A) of the first radiation detector (100A) is non-parallel to the planar surface (103B) of the second radiation detector (100B); wherein the first radiation detector (100A) and the second radiation detector (100B) are configured to move to a plurality of positions relative to the radiation source (109); wherein the image sensor (9000) is configured to capture images of portions of a scene (50) at the positions as described above, respectively, by using the first radiation detector (100A) and the second radiation detector (100B) and together with the radiation, and to form one image of the scene (50) by stitching the images of the respective portions.)

1. An image sensor, comprising:

a first radiation detector and a second radiation detector each comprising a planar surface configured to receive radiation from a radiation source;

wherein the planar surface of the first radiation detector is non-parallel to the planar surface of the second radiation detector;

wherein the first radiation detector and the second radiation detector are configured to move to a plurality of positions relative to the radiation source;

wherein the image sensor is configured to capture images of portions of a scene at the locations as described above, respectively, by using the first and second radiation detectors and together with the radiation; and configured to form an image of the scene by stitching the images of the respective portions.

2. The image sensor of claim 1 wherein the relative position of the first radiation detector with respect to the second radiation detector remains the same.

3. The image sensor of claim 1, wherein the first radiation detector and the second radiation detector are configured to move relative to the radiation source by rotating about a first axis relative to the radiation source.

4. The image sensor of claim 3, wherein the first axis is parallel to a planar surface of the first radiation detector and a planar surface of the second radiation detector.

5. The image sensor of claim 3, wherein the first radiation detector and the second radiation detector are configured to move relative to the radiation source by rotating about a second axis relative to the radiation source; wherein the second axis is different from the first axis.

6. The image sensor of claim 3, wherein the radiation source is located on the first axis.

7. The image sensor of claim 1, wherein the first radiation detector and the second radiation detector are configured to move relative to the radiation source by translating along a first direction relative to the radiation source.

8. The image sensor of claim 7, wherein the first direction is parallel to the planar surface of the first radiation detector and the planar surface of the second radiation detector.

9. The image sensor of claim 7, wherein the first direction is parallel to the planar surface of the first radiation detector but not parallel to the planar surface of the second radiation detector.

10. The image sensor of claim 7, wherein the first radiation detector and the second radiation detector are configured to move relative to the radiation source by translating along a second direction relative to the radiation source; wherein the second direction is different from the first direction.

11. The image sensor of claim 1, wherein the first radiation detector and the second radiation detector each comprise an array of pixels.

12. The image sensor of claim 1 wherein the first radiation detector is rectangular in shape.

13. The image sensor of claim 1 wherein the first radiation detector is hexagonal in shape.

14. A radiation computed tomography imaging system, comprising: the image sensor of claim 1, and a radiation source.

15. A method, comprising:

capturing a first image of a first portion of a scene using a first radiation detector and a second radiation detector and with radiation from a radiation source when the first radiation detector and the second radiation detector are in a first position relative to the radiation source;

capturing a second image of a second portion of the scene when the first and second radiation detectors are in a second position relative to the radiation source using the first and second radiation detectors and with the radiation from the radiation source;

forming an image of the scene by stitching the first image and the second image;

wherein the first and second radiation detectors each comprise a planar surface configured to receive radiation from a radiation source;

wherein the planar surface of the first radiation detector is non-parallel to the planar surface of the second radiation detector.

16. The method of claim 15, wherein the relative position of the first radiation detector with respect to the second radiation detector remains the same.

17. The method of claim 15, further comprising moving the first and second radiation detectors from the first position to the second position by rotating the first and second radiation detectors relative to the radiation source about a first axis.

18. The method of claim 17, wherein the first axis is parallel to a planar surface of the first radiation detector and a planar surface of the second radiation detector.

19. The method of claim 17, wherein moving the first and second radiation detectors from the first position to the second position is further accomplished by rotating the first and second radiation detectors relative to the radiation source about a second axis.

20. The method of claim 17, wherein the radiation source is located on the first axis.

21. The method of claim 15, further comprising moving the first and second radiation detectors from the first position to the second position relative to the radiation source by translating the first and second radiation detectors in a first direction relative to the radiation source.

22. The method of claim 21, wherein the first direction is parallel to the planar surface of the first radiation detector and the planar surface of the second radiation detector.

23. The method of claim 21, wherein the first direction is parallel to the planar surface of the first radiation detector but not parallel to the planar surface of the second radiation detector.

24. The method of claim 21, wherein moving the first radiation detector and the second radiation detector from the first position to the second position is further accomplished by translating along a second direction relative to the radiation source; wherein the second direction is different from the first direction.

[ background of the invention ]

A radiation detector is a device that can be used to measure the flux, spatial distribution, spectrum, or other characteristics of radiation.

Radiation detectors are useful in many applications, one important application being imaging. Radiography is a radiographic technique that can be used to reveal the internal structure of objects of non-uniform composition and opacity, such as the human body.

Early radiation detectors used for imaging included photographic plates and photographic film. The photographic plate may be a glass plate with a photosensitive emulsion coating. Although photographic plates are replaced by photographic film, they can still be used in special situations due to the excellent quality and extreme stability they provide. The photographic film may be a plastic film such as a strip or sheet having a photosensitive emulsion coating.

In the 80's of the 20 th century, photostimulable phosphor plates (PSP plates) began to become available. The PSP board contains a phosphor material having a color center in its crystal lattice. When the PSP plate is exposed to radiation, electrons excited by the radiation are trapped in the color center until they are stimulated by the laser beam scanned over the surface of the PSP plate. When the laser scans the PSP plate, the captured excited electrons emit light, which is collected by a photomultiplier tube, and the collected light is converted into a digital image. Compared with photographic plates and films, the PSP plate is reusable.

Another type of radiation detector is a radiation image intensifier. The components of the radiation image intensifier are typically sealed in a vacuum. In contrast to photographic plates, photographic film, and PSP plates, radiation image intensifiers can produce real-time images, i.e., do not require post-exposure processing to produce an image. The radiation first strikes the input phosphor (e.g., cesium iodide) and is converted to visible light. Visible light then strikes the photocathode (e.g., a thin metal layer containing cesium and antimony compounds) and causes electron emission. The number of emitted electrons is proportional to the intensity of the incident radiation. The emitted electrons are projected through electron optics onto the output phosphor and cause the output phosphor to produce a visible light image.

The scintillator operates somewhat similarly to a radiation image intensifier in that the scintillator (e.g., sodium iodide) absorbs radiation and emits visible light, which can then be detected by a suitable image sensor. In the scintillator, visible light is diffused and scattered in all directions, thereby reducing spatial resolution. Reducing the scintillator thickness helps to improve spatial resolution, but also reduces absorption of radiation. Therefore, the scintillator must achieve a compromise between absorption efficiency and resolution.

Semiconductor radiation detectors largely overcome the problems described above by converting radiation directly into electrical signals. The semiconductor radiation detector may include a semiconductor layer that absorbs radiation at the wavelength of interest. When the radiation particles are absorbed in the semiconductor layer, a plurality of carriers (e.g., electrons and holes) are generated and swept under an electric field toward electrical contacts on the semiconductor layer. The cumbersome thermal management required in currently available semiconductor radiation detectors (e.g., Medipix) can make semiconductor radiation detectors with large areas and large numbers of pixels difficult or impossible to produce.

[ summary of the invention ]

Disclosed herein is an image sensor, comprising: a first radiation detector and a second radiation detector each comprising a planar surface configured to receive radiation from a radiation source; wherein the planar surface of the first radiation detector is non-parallel to the planar surface of the second radiation detector; wherein the first radiation detector and the second radiation detector are configured to move to a plurality of positions relative to the radiation source; wherein the image sensor is configured to capture images of portions of a scene at the positions described above, respectively, by using the first and second radiation detectors and together with the radiation, and to form one image of the scene by stitching the images of the respective portions.

According to an embodiment, the relative position of the first radiation detector with respect to the second radiation detector remains the same.

According to an embodiment, the first radiation detector and the second radiation detector are configured to move relative to the radiation source by rotating around a first axis relative to the radiation source.

According to an embodiment, the first axis is parallel to a planar surface of the first radiation detector and a planar surface of the second radiation detector.

According to an embodiment, the first radiation detector and the second radiation detector are configured to move relative to the radiation source by rotating relative to the radiation source around a second axis; wherein the second axis is different from the first axis.

According to an embodiment, the radiation source is located on the first axis.

According to an embodiment, the first radiation detector and the second radiation detector are configured to move relative to the radiation source by translating along a first direction relative to the radiation source.

According to an embodiment, the first direction is parallel to the planar surface of the first radiation detector and the planar surface of the second radiation detector.

According to an embodiment, the first direction is parallel to the planar surface of the first radiation detector, but not parallel to the planar surface of the second radiation detector.

According to an embodiment, the first radiation detector and the second radiation detector are configured to move relative to the radiation source by translating along a second direction relative to the radiation source; wherein the second direction is different from the first direction.

According to an embodiment, the first radiation detector and the second radiation detector each comprise an array of pixels.

According to an embodiment, the first radiation detector is rectangular in shape.

According to an embodiment, the first radiation detector is hexagonal in shape.

Disclosed herein is a radiation computed tomography imaging system comprising: an image sensor and a radiation source as described above.

Disclosed herein is a method comprising: capturing a first image of a first portion of a scene using a first radiation detector and a second radiation detector and with radiation from a radiation source while the first radiation detector and the second radiation detector are in a first position relative to the radiation source; capturing a second image of a second portion of the scene when the first and second radiation detectors are in a second position relative to the radiation source using the first and second radiation detectors and with the radiation from the radiation source; forming one image of the scene by stitching the first image and the second image; wherein the first radiation detector and the second radiation detector each comprise a planar surface configured to receive radiation from a radiation source; wherein the planar surface of the first radiation detector is non-parallel to the planar surface of the second radiation detector.

According to an embodiment, the relative position of the first radiation detector with respect to the second radiation detector remains the same.

According to an embodiment, the method further comprises moving the first radiation detector and the second radiation detector phase from the first position to the second position by rotating the first radiation detector and the second radiation detector relative to the radiation source about a first axis.

According to an embodiment, the first axis is parallel to a planar surface of the first radiation detector and a planar surface of the second radiation detector.

According to an embodiment, the first and second radiation detectors are moved from the first position to the second position, which is further achieved by rotating the first and second radiation detectors relative to the radiation source about a second axis.

According to an embodiment, the radiation source is located on the first axis.

According to an embodiment, the method further comprises moving the first and second radiation detectors from the first position to the second position relative to the radiation source by translating the first and second radiation detectors in a first direction relative to the radiation source.

According to an embodiment, the first direction is parallel to the planar surface of the first radiation detector and the planar surface of the second radiation detector.

According to an embodiment, the first direction is parallel to the planar surface of the first radiation detector, but not parallel to the planar surface of the second radiation detector.

According to an embodiment, the first and second radiation detectors are moved from the first position to the second position, which is further achieved by translating along a second direction relative to the radiation source; wherein the second direction is different from the first direction.

[ description of the drawings ]

Fig. 1 schematically shows a cross-sectional view of a part of an image sensor according to an embodiment.

Fig. 2A schematically shows a cross-sectional view of a radiation detector according to an embodiment.

Fig. 2B schematically shows a detailed cross-sectional view of the radiation detector according to an embodiment.

Fig. 2C schematically shows an alternative detailed cross-sectional view of the radiation detector according to an embodiment.

Fig. 3 schematically illustrates that the radiation detector may have an array of pixels according to an embodiment.

Fig. 4A schematically shows carriers generated in a plurality of pixels when radiation particles pass through the radiation absorbing layer at an oblique angle of incidence.

Fig. 4B schematically shows carriers generated in a single pixel when a radiation particle passes through the radiation absorbing layer at an incident angle of 0 °.

Fig. 5 schematically shows a functional block diagram of the image sensor according to an embodiment.

Fig. 6A and 6B schematically illustrate movement of a radiation detector of the image sensor relative to a radiation source, respectively, according to an embodiment.

Fig. 7 schematically shows the image sensor capturing an image of a portion of a scene according to an embodiment.

Fig. 8A-8C schematically illustrate an arrangement of the radiation detectors in the image sensor according to some embodiments.

Fig. 9 schematically illustrates an image sensor having a plurality of hexagonal radiation detectors according to an embodiment.

Fig. 10 schematically illustrates a flow diagram of a method of forming an image of a scene by stitching images of portions of the scene captured at multiple locations, according to an embodiment.

Fig. 11 schematically illustrates a system including an image sensor as described herein, the system being suitable for medical imaging, such as chest radiography, abdominal radiography, etc., in accordance with an embodiment.

Fig. 12 schematically illustrates a system including an image sensor as described herein, the system being suitable for dental radiation radiography, in accordance with an embodiment.

Figure 13 schematically illustrates a cargo scanning or non-intrusive inspection (NII) system including an image sensor as described herein, according to an embodiment.

FIG. 14 schematically illustrates another cargo scanning or non-intrusive inspection (NII) system that includes an image sensor as described herein, in accordance with an embodiment.

Figure 15 schematically illustrates a whole-body scanning system including an image sensor as described herein, in accordance with an embodiment.

Fig. 16 schematically illustrates a radiation computed tomography (radiation CT) system including an image sensor as described herein, in accordance with an embodiment.

Fig. 17 schematically illustrates an electron microscope including an image sensor as described herein, in accordance with an embodiment.

Fig. 18A and 18B schematically show electronic system component diagrams of the radiation detector as shown in fig. 2A, 2B and 2C, respectively, according to an embodiment.

Fig. 19 schematically shows the temporal variation of the current flowing through the electrodes of the diode or through the electrical contacts of the resistor of the radiation absorbing layer exposed to radiation (upper curve), said current being caused by carriers generated by radiation particles incident on said radiation absorbing layer, and the corresponding temporal variation of the electrode voltage (lower curve), according to an embodiment.

[ detailed description ] embodiments

Fig. 1 schematically illustrates a cross-sectional view of a portion of an image sensor 9000 according to an embodiment. The image sensor 9000 may have a plurality of radiation detectors, e.g., a first radiation detector 100A, a second radiation detector 100B. The image sensor 9000 may have a support 107 with a curved surface 102. The plurality of radiation detectors may be arranged on the support 107, for example on the curved surface 102 as shown in the example of fig. 1. The first radiation detector 100A may have a first planar surface 103A configured to receive radiation from the radiation source 109. Second radiation detector 100B may have a second planar surface 103B configured to receive radiation from radiation source 109. The first planar surface 103A and the second planar surface 103B may be non-parallel. The radiation from the radiation source 109 may have passed through a scene 50 (e.g., a portion of a human body) before reaching the first radiation detector 100A or the second radiation detector 100B.

Fig. 2A schematically shows a cross-sectional view of a radiation detector 100 according to an embodiment. The radiation detector 100 may be used in the image sensor 9000. The radiation detector 100 may comprise a radiation absorbing layer 110 and an electronics layer 120 (e.g. an ASIC) for processing or analyzing electrical signals of incident radiation generated in the radiation absorbing layer 110. In an embodiment, the radiation detector 100 does not comprise a scintillator. The radiation absorbing layer 110 may comprise a semiconductor material such as silicon, germanium, GaAs, CdTe, CdZnTe, or combinations thereof. The semiconductor may have a high mass attenuation coefficient for the radiant energy of interest. A planar surface 103 of the radiation absorbing layer 110 distal to the electron layer 120 is configured to receive radiation.

As shown in the detailed cross-sectional view of the radiation detector 100 in fig. 2B, the radiation absorbing layer 110 according to an embodiment may comprise one or more diodes (e.g., p-i-n or p-n) consisting of one or more discrete regions 114 of first and second doped regions 111, 113. The second doped region 113 may be separated from the first doped region 111 by an optional intrinsic region 112. The discrete regions 114 are separated from each other by the first doped region 111 or the intrinsic region 112. The first doped region 111 and the second doped region 113 have opposite type doping (e.g., the first doped region 111 is p-type and the second doped region 113 is n-type, or the first doped region 111 is n-type and the second doped region 113 is p-type). In the example of fig. 2B, each discrete region 114 of the second doped region 113 constitutes a diode together with the first doped region 111 and the optional intrinsic region 112. That is, in the example of fig. 2B, the radiation absorption layer 110 includes a plurality of diodes having the first doped region 111 as a common electrode. The first doped region 111 may also have discrete portions.

When a radiation particle strikes the radiation absorbing layer 110, which comprises a diode, the radiation particle may be absorbed and generate one or more carriers by several mechanisms. One radiation particle can generate 10 to 100000 carriers. The carriers may drift under the electric field towards the electrode of one of the diodes. The electric field may be an external electric field. The electrical contacts 119B may comprise discrete portions, each of which is in electrical contact with the discrete region 114. In an embodiment, the carriers may drift in different directions such that the carriers generated by a single radiating particle are substantially not shared by two different discrete regions 114 ("substantially not shared" here means that less than 2%, less than 0.5%, less than 0.1%, or less than 0.01% of these carriers flow to one of the discrete regions 114 that is different from the rest of the carriers). The carriers generated by the radiation particles incident around the footprint of one of the discrete regions 114 are substantially not shared by the other of the discrete regions 114. One pixel 150 associated with one discrete region 114 may be a surrounding region of the discrete region 114 to which substantially all (more than 98%, more than 99.5%, more than 99.9%, or more than 99.99%) of the carriers generated by the radiation particles incident therein at an incident angle of 0 ° flow to the discrete region 114. That is, less than 2%, less than 1%, less than 0.1%, or less than 0.01% of the carriers flow out of the pixel.

As shown in the alternate detailed cross-sectional view of the radiation detector 100 in FIG. 2C, the radiation absorbing layer 110 according to embodiments may include resistors with semiconductor materials such as silicon, germanium, GaAs, CdTe, CdZnTe, or combinations thereof, but not diodes. The semiconductor may have a high mass attenuation coefficient for the radiant energy of interest.

When a radiation particle strikes the radiation absorbing layer 110, which includes a resistor but does not include a diode, the radiation particle may be absorbed and generate one or more carriers by several mechanisms. One radiation particle can generate 10 to 100000 carriers. The carriers may drift under the electric field toward electrical contact 119A and electrical contact 119B. The electric field may be an external electric field. The electrical contacts 119B include discrete portions. In an embodiment, the carriers may drift in different directions, such that the carriers generated by a single radiating particle are substantially not shared by two different discrete portions of the electrical contact 119B ("substantially not shared" here means that less than 2%, less than 0.5%, less than 0.1%, or less than 0.01% of these carriers flow to discrete portions of a different group than the rest of the carriers). The carriers generated by the radiation particles incident around the footprint of one of the discrete portions of electrical contact 119B are substantially not shared by the other discrete portion of electrical contact 119B. One pixel 150 associated with one of the discrete portions of the electrical contact 119B may be a surrounding region of the discrete portion to which substantially all (more than 98%, more than 99.5%, more than 99.9%, or more than 99.99%) of the carriers generated by the radiation particles incident therein at the 0 ° angle of incidence flow to the discrete portion of the electrical contact 119B. That is, less than 2%, less than 0.5%, less than 0.1%, or less than 0.01% of the carriers flow out of the pixel.

The electron shell 120 may comprise an electronic system 121, the electronic system 121 being adapted to process or interpret signals generated by radiation particles incident on the radiation absorbing layer 110. The electronic system 121 may include analog circuits such as filter networks, amplifiers, integrators, comparators, or digital circuits such as microprocessors and memory. The electronic system 121 may include components that are common to the pixels or components that are dedicated to individual pixels. For example, the electronic system 121 may include an amplifier dedicated to each of the pixels and a microprocessor shared among all the pixels. The electronic system 121 may be electrically connected to the pixels through vias 131. The space between the vias may be filled with a filler material 130, which may increase the mechanical stability of the connection of the electron layer 120 to the radiation absorbing layer 110. Other bonding techniques are possible to connect the electronic system 121 to the pixels without using vias.

Fig. 3 schematically shows that the radiation detector 100 may have an array of the pixels 150. The array may be a rectangular array, a honeycomb array, a hexagonal array, or any other suitable array. Each of the pixels 150 may be configured to detect a radiation particle incident thereon, measure an energy of the radiation particle, or both. For example, each pixel 150 may be configured to count the number of radiation particles incident thereon over a period of time that have energy falling in multiple bins. All of the pixels 150 may be configured to count the number of radiation particles in the plurality of energy bins incident thereon over the same period of time. Each pixel 150 may have its own analog-to-digital converter (ADC) configured to digitize an analog signal representing the energy of the incident radiation particles into a digital signal. The ADC may have a resolution of 10 bits or more. Each of the pixels 150 may be configured to measure its dark current, e.g. before or at the same time as each radiation particle is incident thereon. Each of the pixels 150 may be configured to subtract the contribution of the dark current from the energy of the radiation particle incident thereon. The pixels 150 may be configured to operate in parallel. For example, while one pixel 150 measures an incident radiation particle, another pixel 150 may be waiting for a radiation particle to arrive. The pixels 150 may, but need not, be individually addressable.

The spatial resolution of the image sensor 9000 may depend on the angle of incidence of the radiation onto the image sensor 9000. The spatial resolution when the angle of incidence is oblique (e.g., >45 °) may be lower than the spatial resolution when the angle of incidence is 0 °. For example, when the incident angle at the center is 0 ° and the incident angle at the edge is oblique, the spatial resolution at the edge of the image sensor 9000 may be lower than the spatial resolution at the center of the image sensor 9000. The reduction in spatial resolution from center to edge can be significant if the field of view of the image sensor 9000 is large (e.g., 0.5 π or more) or the thickness of the radiation absorbing layer 110 in the radiation detector of the image sensor 9000 is comparable to or larger than the size of the pixel 150. The field of view of the image sensor 9000 is the solid angle through which the image sensor 9000 is sensitive to radiation. Fig. 4A schematically illustrates that carriers may be generated in pixels associated with a plurality of discrete portions of the electrical contacts 119B when radiation particles pass through the radiation absorbing layer 110 at oblique angles of incidence. Fig. 4B schematically illustrates that carriers may be generated in pixels associated with a single discrete portion of the electrical contact 119B when radiation particles pass through the radiation absorbing layer 110 at an incident angle of 0 °.

In an embodiment, the radiation detectors 100 (e.g., 100A and 100B) of the image sensor 9000 are movable to a plurality of positions relative to the radiation source 109. The image sensor 9000 may capture images of portions of the scene 50 from the radiation source 109 at the plurality of locations, respectively, using the radiation detector 100 and with the radiation. The image sensor 9000 can stitch these images to form an image of the entire scene 50. The image sensor 9000 according to embodiments as shown in fig. 5 may comprise an actuator 500, said actuator 500 being configured to move said radiation detector 100 to a plurality of positions. The actuator 500 may include a controller 600. The image sensor may comprise a collimator 200, the collimator 200 allowing only radiation to reach the active area of the radiation detector 100. The active area of the radiation detector 100 is the area of the radiation detector 100 that is sensitive to radiation. The actuator 500 may move the collimator 200 together with the radiation detector 100. The position may be determined by the controller 600.

Fig. 6A and 6B each schematically illustrate movement of the radiation detector 100 (e.g., 100A and 100B) relative to the radiation source 109, in accordance with an embodiment. In the example of fig. 6A and 6B, only a portion of an image sensor 9000 having a first radiation detector 100A and a second radiation detector 100B is shown. The first radiation detector 100A and the second radiation detector 100B may be arranged on the support 107. The relative position of the first radiation detector 100A with respect to the second radiation detector 100B remains the same at a plurality of positions. The relative position of the first radiation detector 100A with respect to the second radiation detector 100B may, but need not, remain the same when the first radiation detector 100A and the second radiation detector 100B are moved from one position to another of the plurality of positions. The first radiation detector 100A and the second radiation detector 100B are rotatable with respect to the radiation source 109 about a first axis 501. As shown in the example of fig. 6A, the first radiation detector 100A and the second radiation detector 100B are rotated about the first axis 501 relative to the radiation source 109 from position 503A to position 503B. The first axis 501 may be parallel to the first planar surface 103A of the first radiation detector 100A and the second planar surface 103B of the second radiation detector 100B. The radiation source may be on the first axis 501. The first radiation detector 100A and the second radiation detector 100B are rotatable relative to the radiation source 109 about a second axis 502. The second axis 502 is different from the first axis 501. For example, the second axis 502 may be perpendicular to the first axis 501. As shown in the example of fig. 6A, the first radiation detector 100A and the second radiation detector 100B are rotatable about the second axis 502 from a position 503A to a position 503C. The radiation source 109 may be on the second axis 502.

As shown in the example of fig. 6B, the first radiation detector 100A and the second radiation detector 100B are translated in a first direction 504 relative to the radiation source 109 from a position 506A to a position 506B. The first radiation detector 100A and the second radiation detector 100B are translatable along a second direction 505. The second direction 505 is different from the first direction 504. For example, the second direction 505 may be perpendicular to the first direction 504. As shown in the example of fig. 6B, the first radiation detector 100A and the second radiation detector 100B may be translated along a second direction 505 from a position 506A to a position 506C. The first direction 504 or the second direction 505 may be parallel to either of the first planar surface 103A and the second planar surface 103B, or to both, or not parallel to either of the two. For example, the first direction 504 may be parallel to the first planar surface 103A, but not parallel to the second planar surface 103B.

Fig. 7 schematically illustrates that the image sensor 9000 may capture an image of a portion of the scene 50. In the example shown in fig. 7, the radiation detector 100 is moved to three positions A, B and C, for example, by using an actuator 500. The image sensor 9000 captures images 51A, 51B and 51C of the portion of the scene 50 at the positions A, B and C, respectively. The image sensor 9000 can stitch the images 51A, 51B, and 51C of the portions into an image of the scene 50. These partial images 51A, 51B and 51C may be superimposed on each other to facilitate stitching. Each portion of the scene 50 appears at least in one of the images captured when the radiation detector is in a plurality of positions. That is, when stitched together, the images of the portions may cover the entire scene 50.

The radiation detector 100 may be arranged in the image sensor 9000 in various ways. Fig. 8A schematically shows an arrangement according to an embodiment, wherein the radiation detectors 100 are arranged in staggered rows. For example, the radiation detector 100A and the radiation detector 100B are in the same row, aligned in the Y direction, and uniform in size; the radiation detector 100C and the radiation detector 100D are aligned in the Y direction in the same row, and are uniform in size. The radiation detectors 100A and 100B are interleaved in the X direction with respect to the radiation detectors 100C and 100D. According to an embodiment, the distance X2 between two adjacent radiation detectors 100A and 100B in the same row is larger than the width X1 (i.e. the X-direction dimension, i.e. the direction of extension of the row) of one radiation detector in the same row and smaller than twice the width X1. The radiation detector 100A and the radiation detector 100E are in the same column, aligned in the X direction, and uniform in size; the distance Y2 between two adjacent radiation detectors 100A and 100E in the same column is smaller than the width Y1 (i.e., the Y-direction dimension) of one radiation detector in the same column. This arrangement allows the scene to be imaged as shown in fig. 7, and an image of the scene can be obtained by stitching images of three portions of the scene captured at three positions spaced apart in the X direction.

Fig. 8B schematically shows another arrangement according to an embodiment, wherein the radiation detectors 100 are arranged in a rectangular grid. For example, the radiation detector 100 may include the radiation detectors 100A, 100B, 100E, and 100F precisely arranged as in fig. 8A, without the radiation detectors 100C, 100D, 100G, or 100H in fig. 8A. This arrangement allows imaging of the scene by taking images of portions of the scene at six locations. For example, three positions spaced apart in the X direction, and another three positions spaced apart in the X direction and spaced apart from the first three positions in the Y direction.

Other arrangements are also possible. For example, in fig. 8C, the radiation detectors 100 may span the entire width of the image sensor 9000 in the X-direction, with the distance Y2 between two adjacent radiation detectors 100 being less than the width Y1 of one radiation detector. Assuming that the width of the radiation detector in the X-direction is greater than the width of the scene in the X-direction, an image of the scene may be obtained by stitching images of two portions of the scene captured at two locations spaced apart in the Y-direction.

The radiation detector 100 as described above has any suitable size and shape. According to an embodiment (e.g. in fig. 7), at least some of the radiation detectors are rectangular in shape. According to an embodiment, at least some of the radiation detectors are hexagonal in shape, as shown in fig. 9.

Fig. 10 schematically shows a flow chart of a method according to an embodiment. In step 151, a first image of a first portion of the scene 50 is captured by the first radiation detector 100A and the second radiation detector 100B along with radiation from the radiation source 109, while the first radiation detector 100A and the second radiation detector 100B are in a first position relative to the radiation source 109. In optional step 152, the first radiation detector 100A and the second radiation detector 100B are moved from a first position to a second position. Moving the first and second radiation detectors 100A and 100B from the first position to the second position may be performed by rotating the first and second radiation detectors 100A and 100B about a first axis 501 relative to the radiation source 109, and may optionally be further performed by rotating the first and second radiation detectors 100A and 100B about a second axis 502 relative to the radiation source 109. Moving the first and second radiation detectors 100A, 100B from the first position to the second position may be performed by translating the first and second radiation detectors 100A, 100B along a first direction 504 relative to the radiation source 109, and may optionally be further performed by translating the first and second radiation detectors 100A, 100B along a second direction 505 relative to the radiation source 109. In step 153, a second image of a second portion of the scene 50 is captured by the first radiation detector 100A and the second radiation detector 100B along with radiation from the radiation source 109, while the first radiation detector 100A and the second radiation detector 100B are in a second position relative to the radiation source 109. In step 154, an image of the scene 50 is formed by stitching the first image and the second image.

The image sensor 9000 as described above can be used in various systems as described below.

Fig. 11 schematically illustrates a system including an image sensor 9000 as described in fig. 1-9. The system may be used for medical imaging such as chest radiography, abdominal radiography, and the like. The system comprises a radiation source 1201. Radiation emitted from the radiation source 1201 penetrates an object 1202 (e.g., a body part such as a chest, a limb, an abdomen), is attenuated to varying degrees by internal structures of the object 1202 (e.g., bones, muscles, fat, organs, etc.), and is projected to the image sensor 9000. The image sensor 9000 forms an image by detecting the intensity distribution of radiation.

Fig. 12 schematically illustrates a system including an image sensor 9000 as described in fig. 1-9. The system may be used for medical imaging such as dental radiation radiography. The system includes a radiation source 1301. Radiation emitted from the radiation source 1301 penetrates an object 1302 that is part of the oral cavity of a mammal (e.g., a human). The object 1302 may comprise a maxilla, a tooth, a mandible, or a tongue. The radiation is attenuated to varying degrees by different structures of the object 1302 and projected to the image sensor 9000. The image sensor 9000 forms an image by detecting an intensity distribution of radiation. Teeth absorb more radiation than caries, infection, periodontal ligament. The radiation dose received by dental patients is usually very small (about 0.150mSv for a full mouth series).

Fig. 13 schematically illustrates a cargo scanning or non-intrusive inspection (NII) system including an image sensor 9000 as described in fig. 1-9. The system may be used to inspect and identify cargo in a transportation system, such as containers, vehicles, ships, luggage, and the like. The system includes a radiation source 1401. Radiation emitted from the radiation source 1401 may be backscattered from an object 1402 (e.g., a shipping container, vehicle, vessel, etc.) and projected to the image sensor 9000. Different internal structures of the object 1402 may backscatter radiation differently. The image sensor 9000 forms an image by detecting the intensity distribution of the backscattered radiation and/or the energy of the backscattered radiation particles.

Fig. 14 schematically illustrates another cargo scanning or non-intrusive inspection (NII) system that includes an image sensor 9000 as described in fig. 1-9. The system may be used for baggage inspection at public transportation stations and airports. The system comprises a radiation source 1501. Radiation emitted from the radiation source 1501 may penetrate a piece of luggage 1502, be attenuated to varying degrees by the contents of the luggage, and be projected onto the image sensor 9000. The image sensor 9000 forms an image by detecting the intensity distribution of transmitted radiation. The system can reveal the contents of luggage and identify prohibited items on public transportation, such as firearms, narcotics, sharps, flammable items.

Fig. 15 schematically shows a whole-body scanner system comprising an image sensor 9000 as described in fig. 1 to 9. The whole-body scanner system can detect objects on the human body for security inspection without physically removing clothing or making physical contact. The whole-body scanner system is capable of detecting non-metallic objects. The whole body scanner system includes a radiation source 1601. Radiation emitted from the radiation source 1601 can be backscattered from the person 1602 under examination and objects thereon and projected onto the image sensor 9000. The object and the human body may backscatter radiation differently. The image sensor 9000 forms an image by detecting the intensity distribution of the backscattered radiation. The image sensor 9000 and the radiation source 1601 may be configured to scan a person in a linear or rotational direction.

Fig. 16 schematically shows a radiation computed tomography (radiation CT) system. The radiation CT system uses computer-processed radiation to generate tomographic images (virtual "slices") of specific regions of a scanned object. The tomographic images can be used for diagnostic and therapeutic purposes in various medical disciplines, or for flaw detection, failure analysis, metrology, assembly analysis, and reverse engineering. The radiation CT system includes an image sensor 9000 and a radiation source 1701 as described in fig. 1 to 9. The image sensor 9000 and the radiation source 1701 may be configured to rotate synchronously along one or more circular or helical paths.

Fig. 17 schematically shows an electron microscope. The electron microscope includes an electron source 1801 (also referred to as an electron gun) configured to emit electrons. The electron source 1801 may have various emission mechanisms, such as thermionic, photocathode, cold emission, or plasma sources. The emitted electrons pass through an electron optical system 1803, which electron optical system 1803 may be configured to shape, accelerate, or focus the electrons. The electrons then reach the sample 1802 and an image detector may form an image therefrom. The electron microscope may include an image sensor 9000 as described in fig. 1-9 for performing energy dispersive radiation spectroscopy (EDS). EDS is an analytical technique for elemental analysis or chemical characterization of a sample. When the electrons are incident on the sample, they cause the sample to emit characteristic radiation. The incident electrons excite electrons of the atomic inner shell layer in the sample, and the electrons are ejected out of the shell body, and meanwhile, electron holes where the electrons are located are generated. Electrons from the outer, higher energy shell then fill the holes, and the energy difference between the higher and lower energy shells can be released in the form of radiation. The number and energy of the radiation emitted from the sample can be measured by the image sensor 9000.

The image sensor 9000 described herein may have other applications such as radiation telescopes, mammography, industrial radiation defect detection, radiation microscopy or radiation microscopy, radiation casting inspection, radiation non-destructive inspection, radiation weld inspection, radiation digital subtraction angiography, and the like. It may be suitable to use the image sensor 9000 instead of a photographic negative, photographic film, PSP film, radiation image intensifier, scintillator, or another semiconductor radiation detector.

Fig. 18A and 18B each show a component diagram of an electronic system 121 according to an embodiment. The electronic system 121 may include a first voltage comparator 301, a second voltage comparator 302, a counter 320, a switch 305, an optional voltage meter 306, and a controller 310.

The first voltage comparator 301 is configured to compare a voltage of at least one of the electrical contacts 119B to a first threshold. The first voltage comparator 301 may be configured to monitor the voltage directly or to calculate the voltage by integrating the current flowing through the electrical contact 119B over a period of time. The first voltage comparator 301 may be controllably activated or deactivated by the controller 310. The first voltage comparator 301 may be a continuous comparator. That is, the first voltage comparator 301 may be configured to be continuously enabled and continuously monitor the voltage. The first voltage comparator 301 may be a clocked comparator. The first threshold may be 1-5%, 5-10%, 10% -20%, 20-30%, 30-40%, or 40-50% of the maximum voltage that an incident radiation particle can generate on the electrical contact 119B. The maximum voltage may depend on the energy of the incident radiation particles, the material of the radiation absorbing layer 110, and other factors. For example, the first threshold may be 50mV, 100mV, 150mV, or 200 mV.

The second voltage comparator 302 is configured to compare the voltage to a second threshold. The second voltage comparator 302 may be configured to monitor the voltage directly or to calculate the voltage by integrating the current flowing through the diode or electrical contact over a period of time. The second voltage comparator 302 may be a continuous comparator. The second voltage comparator 302 may be controllably activated or deactivated by the controller 310. When the second voltage comparator 302 is disabled, the power consumption of the second voltage comparator 302 may be less than 1%, less than 5%, less than 10%, or less than 20% of the power consumption when the second voltage comparator 302 is enabled. The absolute value of the second threshold is greater than the absolute value of the first threshold. As used herein, the term "absolute value" or "modulus" | x | of a real number x is a non-negative value of x regardless of its sign. That is to say that the first and second electrodes,the second threshold may be 200% -300% of the first threshold. For example, the second threshold may be 100mV, 150mV, 200mV, 250mV, or 300 mV. The second voltage comparator 302 and the first voltage comparator 301 may be the same component. That is, the system 121 may have one voltage comparator that may compare a voltage to two different thresholds at different times.

The first voltage comparator 301 or the second voltage comparator 302 may include one or more operational amplifiers or any other suitable circuitry. The first voltage comparator 301 or the second voltage comparator 302 may have a high speed to allow the system 121 to operate with a high flux of incident radiation particles. However, having high speed is usually at the cost of power consumption.

The counter 320 is configured to record at least a number of radiation particles incident on the pixel 150 including the electrical contact 119B. The counter 320 may be a software component (e.g., a number stored in a computer memory) or a hardware component (e.g., 4017IC and 7490 IC).

The controller 310 may be a hardware component such as a microcontroller and a microprocessor. The controller 310 is configured to initiate a time delay when the first voltage comparator 301 determines that the absolute value of the voltage equals or exceeds the absolute value of the first threshold (e.g., the absolute value of the voltage increases from below the absolute value of the first threshold to a value that equals or exceeds the absolute value of the first threshold). Absolute values are used here because the voltage can be negative or positive depending on whether the cathode or anode voltage of the diode or which electrical contact is used. The controller 310 may be configured to keep disabling the second voltage comparator 302, the counter 320, and any other circuitry not required in the operation of the first voltage comparator 301 until the first voltage comparator 301 determines that the absolute value of the voltage equals or exceeds the absolute value of the first threshold. The time delay may expire before or after the voltage becomes stable (i.e., the rate of change of the voltage is substantially zero). The phrase "the rate of change is substantially zero" means that the temporal change is less than 0.1%/ns. The phrase "the rate of change is substantially non-zero" means that the time change of the voltage is at least 0.1%/ns.

The control 310 may be configured to start the second voltage comparator during the time delay (which includes a start and an expiration). In an embodiment, the controller 310 is configured to activate the second voltage comparator at the beginning of the time delay. The term "activate" means to bring a component into an operational state (e.g., by sending a signal such as a voltage pulse or logic level, by providing power, etc.). The term "disable" means to bring a component into a non-operational state (e.g., by sending a signal such as a voltage pulse or logic level, by cutting power, etc.). The operating state may have a higher power consumption (e.g., 10 times higher, 100 times higher, 1000 times higher) than the non-operating state. The controller 310 itself may be deactivated until the absolute value of the output voltage of the first voltage comparator 301 equals or exceeds the absolute value of the first threshold value to activate the controller 310.

If, during the time delay, the second voltage comparator 302 determines that the absolute value of the voltage equals or exceeds the absolute value of the second threshold, the controller 310 may be configured to increment at least one of the numbers recorded by the counter 320 by one.

The controller 310 may be configured to cause the optional voltmeter 306 to measure the voltage upon expiration of the time delay. The controller 310 may be configured to connect the electrical contact 119B to electrical ground to reset the voltage and discharge any carriers accumulated on the electrical contact 119B. In an embodiment, the electrical contact 119B is connected to electrical ground after the time delay expires. In an embodiment, the electrical contact 119B is connected to electrical ground for a limited reset period. The controller 310 may connect the electrical contact 119B to electrical ground by controlling the switch 305. The switch may be a transistor, such as a Field Effect Transistor (FET).

In an embodiment, the system 121 does not have an analog filter network (e.g., an RC network). In an embodiment, the system 121 has no analog circuitry.

The voltmeter 306 can feed the voltage it measures to the controller 310 as an analog or digital signal.

The system 121 can include an integrator 309 electrically connected to the electrical contact 119B, wherein the integrator is configured to collect current photons from the electrical contact 119B. The integrator 309 may include a capacitor in the feedback path of the operational amplifier. The operational amplifier so configured is referred to as a capacitive transimpedance amplifier (CTIA). CTIA has a high dynamic range by preventing the op amp from saturating and improves the signal-to-noise ratio by limiting the bandwidth in the signal path. Carriers from the electrical contact 119B accumulate on the capacitor over a period of time ("integration period"). After the integration period expires, the capacitor voltage is sampled by the ADC 306 and then reset via a reset switch. The integrator 309 may include a capacitor directly connected to the electrical contact 119B.

FIG. 19 schematically shows the flow-throughThe temporal variation of the current of the electrical contact 119B caused by the carriers generated by the radiation particles incident on the pixel 150 comprising said electrical contact 119B (upper curve) and the corresponding temporal variation of the voltage of said electrical contact 119B (lower curve). The voltage may be an integral of the current with respect to time. At time t₀The radiation particles strike the pixel 150, carriers begin to be generated in the pixel 150, current begins to flow through the electrical contact 119B, and the absolute value of the voltage at the electrical contact 119B begins to increase. At time t₁The first voltage comparator 301 determines that the absolute value of the voltage equals or exceeds the absolute value of the first threshold V1, the controller 310 activates a time delay TD1 and the controller 310 may deactivate the first voltage comparator 301 when the TD1 starts. If the controller 310 is at time t₁Is previously deactivated at time t₁The controller 310 is activated. During the TD1, the controller 310 activates the second voltage comparator 302. The term "during" a time delay as used herein means beginning and expiration (i.e., ending) as well as any time in between. For example, the controller 310 may activate the second voltage comparator 302 upon expiration of the TD 1. If during the TD1, the second voltage comparator 302 determines at time t₂The absolute value of the voltage equals or exceeds the absolute value of the second threshold V2, the controller 310 waits for the voltage to stabilize. Said voltage being at time t_eStable, when all carriers generated by the radiation particles drift out of the radiation absorbing layer 110. At time t_sThe time delay TD1 expires. At time t_eAt or after this time, the controller 310 causes the voltmeter 306 to digitize the voltage and determine in which bin the energy of the radiating particle falls. The controller 310 then increments the number of records of the counter 320 corresponding to the bin by one. In the example of FIG. 9, the time t_sAt said time t_eThen; that is, TD1 expires after all carriers generated by the radiation particles drift out of radiation absorbing layer 110. If the time t cannot be easily measured_eTD1 may be empirically selected to allow sufficient time to collect particles radiated therefromSubstantially all of the carriers generated, but TD1 must not be too long, otherwise there is a risk that another carrier generated by the incident radiation particles will be collected. That is, TD1 may be empirically selected such that time t_sAt time t_eAnd then. Time t_sNot necessarily at time t_eThereafter, because once V2 is reached, controller 310 may ignore TD1 and wait time t_e. Therefore, the rate of change of the difference between the voltage and the contribution value of the dark current to the voltage is at time t_eIs substantially zero. The controller 310 may be configured to expire at TD1 or at time t₂Or disable the second voltage comparator 302 at any time in between.

At time t_eIs proportional to the number of carriers generated by the radiating particles, which number is related to the energy of the radiating particles. The controller 310 may be configured to determine the energy of the radiation particles using the voltmeter 306.

After TD1 expires or is digitized by voltmeter 306 (whichever is later), the controller connects electrical contact 119B to electrical ground 310 for a reset period RST to allow the carriers accumulated on electrical contact 119B to flow to ground and reset the voltage. After RST, the system 121 is ready to detect another incident radiation particle. If the first voltage comparator 301 is disabled, the controller 310 may enable it at any time prior to the expiration of RST. If the controller 310 is disabled, it may be activated before the RST expires.

While various aspects and embodiments have been disclosed herein, other aspects and embodiments will be apparent to those skilled in the art. The various aspects and embodiments disclosed herein are for purposes of illustration and not limitation, and their true scope and spirit should be determined by the claims herein.