阅读说明：本技术 氮化镓器件和集成电路的栅极驱动电路及电压调节器 (Gallium nitride device, gate drive circuit of integrated circuit and voltage regulator ) 是由 李湛明 傅玥 刘雁飞 于 2019-06-27 设计创作，主要内容包括：本发明实施例提供一种氮化镓器件和集成电路的栅极驱动电路及电压调节器,采用氮化镓HEMT技术实现的电压稳定和调压电路能够提供稳定的输出电压,适用于氮化镓功率晶体管栅极驱动器和氮化镓集成电路的低压辅助电源等应用。栅极驱动器和电压调节器模块包括至少一个串联连接在一起的DHEMT和至少两个EHEMTs,以便至少一个DHEMT作为可变电阻工作,并且至少两个EHEMTs作为限制输出的齐纳二极管工作。栅极驱动器和电压调节器模块可以实现作为一个氮化镓集成电路,并且可以在单个芯片上与放大器和功率HEMT等其他组件整体集成,以提供氮化镓HEMT功率模块集成电路。(The embodiment of the invention provides a gallium nitride device, a grid driving circuit of an integrated circuit and a voltage regulator, wherein the voltage stabilizing and regulating circuit realized by adopting a gallium nitride HEMT technology can provide stable output voltage, and is suitable for application of a gallium nitride power transistor grid driver, a low-voltage auxiliary power supply of the gallium nitride integrated circuit and the like. The gate driver and voltage regulator module includes at least one DHEMT and at least two EHEMTs connected together in series such that at least one DHEMT operates as a variable resistor and at least two EHEMTs operate as output limiting Zener diodes. The gate driver and voltage regulator module may be implemented as one gallium nitride integrated circuit and may be monolithically integrated with other components, such as the amplifier and power HEMT, on a single chip to provide a gallium nitride HEMT power module integrated circuit.)