阅读说明：本技术 芯片转移方法及设备 (Chip transfer method and device ) 是由 白圣焕 金戊一 金镐岩 金炯俊 于 2020-09-29 设计创作，主要内容包括：本发明提供一种芯片转移方法及使用所述方法的芯片转移设备,所述方法包含：在被转移衬底上制备其上设置有多个芯片的转移衬底；发射线光束；通过使用设置在线光束的路径上的掩模从线光束塑形多个图案光束；通过将图案光束照射到转移衬底来将多个芯片与转移衬底分隔开；以及将与转移衬底分隔开的多个芯片安放在被转移衬底上。芯片转移方法及设备能够通过使用具有图案的掩模来将多个芯片转移到被转移衬底上的预定位置处。(The invention provides a chip transfer method and a chip transfer device using the same, wherein the method comprises the following steps: preparing a transfer substrate on which a plurality of chips are provided on a transferred substrate; emitting a line beam; shaping a plurality of pattern beams from the line beam by using a mask disposed on a path of the line beam; separating the plurality of chips from the transfer substrate by irradiating a pattern beam to the transfer substrate; and placing a plurality of chips spaced apart from the transfer substrate on the transferred substrate. The chip transfer method and apparatus are capable of transferring a plurality of chips to predetermined positions on a transferred substrate by using a mask having a pattern.)

1. A chip transfer method, comprising:

preparing a transfer substrate on a transferred substrate, wherein a plurality of chips are arranged on the transfer substrate;

emitting a line beam;

shaping a plurality of pattern beams from the line beam by using a mask disposed on a path of the line beam;

separating the plurality of chips from the transfer substrate by irradiating the pattern beam to the transfer substrate; and

placing a plurality of the chips spaced apart from the transfer substrate on the transferred substrate.

2. The chip transfer method according to claim 1, wherein the separation of the plurality of the chips comprises irradiating the plurality of the pattern beams to the plurality of the chips to be separated from the transfer substrate in a respectively corresponding manner.

3. The chip transfer method according to claim 2, further comprising replacing a pattern by changing a position of the mask, the line beam being transmitted through a pattern having a size corresponding to each of a plurality of the chips among a plurality of patterns formed in the mask to shape the line beam into the pattern beam.

4. The chip transfer method according to claim 3, further comprising:

shaping a marking beam from the line beam by using the mask disposed in a path of the line beam;

generating a marker beam image by irradiating the marker beam to the transfer substrate and photographing the marker beam on the transfer substrate; and

using the marker beam image to initially align the position of the mask relative to the transfer substrate.

5. The chip transfer method according to claim 4, wherein the shaping of the pattern beam and the shaping of the marker beam are performed simultaneously by using the same line beam,

wherein the marker beam is shaped from one portion of the line beam and the pattern beam is shaped from the remaining portion of the line beam.

6. The chip transfer method according to claim 4, further comprising:

irradiating the pattern beam to the transfer substrate and generating a pattern beam image by photographing the pattern beam transmitted through the transfer substrate; and

using the pattern beam image to secondarily align the inclination and distance of the mask with respect to the transfer substrate for focusing the pattern beam transmitted through the mask and irradiated to the transfer substrate.

7. The chip transfer method according to claim 4, wherein the shaping of the marker beam comprises forming a pair of the marker beams at both sides of the pattern beam by transmitting the line beam through a pair of the alignment marks among a plurality of alignment marks formed at each of both sides of a plurality of patterns, the pair of the alignment marks being formed at both sides of a pattern having a size corresponding to a plurality of the chips.

8. The chip transfer method according to claim 7, wherein the generating of the marker beam image comprises:

shooting a pair of the alignment marks formed on the transfer substrate by a pair of the marking beams irradiated from top to bottom to the transfer substrate; and

inserting a reference mark into an image obtained by photographing the alignment mark with reference to coordinates of the reference mark displayed on the transfer substrate corresponding to the marker beam.

9. The chip transfer method of claim 8, wherein the primary alignment comprises:

calculating a shift of the alignment mark relative to the reference mark from the marker beam image; and

adjusting the position and inclination of the mask in a direction crossing a traveling direction of the line beam by as much as the offset so that the alignment mark coincides with the reference mark.

10. The chip transfer method of claim 6, wherein the generating of the pattern beam comprises: while scanning the transfer substrate in an arrangement direction of the plurality of pattern beams transmitted through the transfer substrate from top to bottom, focused images of the plurality of pattern beams are taken.

11. The chip transfer method according to claim 10, wherein the secondary alignment comprises:

collecting characteristics of the pattern beam from the focused image and comparing the collected characteristics to reference characteristics; and

adjusting a position and a tilt of the mask in a traveling direction of the line beam so that the collected characteristic coincides with the reference characteristic.

12. A chip transfer apparatus for transferring a plurality of chips from a transfer substrate to a transferred substrate, comprising:

a mask having a pattern for shaping a line beam into a plurality of pattern beams to be irradiated to the transfer substrate;

a mask support configured to movably and rotatably support the mask; and

a laser source unit configured to emit the line beam toward the mask so as to transfer a plurality of the chips.

13. The chip transfer apparatus according to claim 12, wherein a plurality of different patterns are formed in the mask, and

one of the plurality of patterns has a size corresponding to each of the plurality of chips.

14. The chip transfer apparatus according to claim 13, further comprising a pattern replacement unit configured to change a position of the mask by controlling the mask support to transmit the line beam through a pattern having a size corresponding to a plurality of the chips attached to the transfer substrate among a plurality of patterns.

15. The chip transfer apparatus according to claim 13, wherein each of the plurality of patterns comprises a plurality of pattern holes,

wherein the pattern holes arranged on the same line in the width direction of the line beam have the same shape, size, and arrangement as each other, and the pattern holes arranged in a direction crossing the width direction of the line beam have different shapes, sizes, and arrangements from each other.

16. The chip transfer apparatus according to claim 14 or 15, wherein a plurality of alignment marks are formed at both sides of a plurality of patterns in a width direction of the line beam,

a plurality of the alignment marks are arranged on the same line as the plurality of patterns in a width direction of the line beam, respectively, an

Simultaneously irradiating the transfer substrate with a plurality of the pattern beams transmitted through a pattern having a size corresponding to a plurality of micro LED chips, and a pair of the mark beams transmitted through a pair of the alignment marks disposed at both sides of the pattern having a size corresponding to a plurality of the micro LED chips.

17. The chip transfer apparatus according to claim 16, further comprising:

a first alignment monitoring unit configured to generate a marker beam image by photographing the marker beam irradiated to the transfer substrate; and

a first alignment adjustment unit configured to change a position and an inclination of the mask in a direction crossing a traveling direction of the line beam by controlling the mask support to coincide with a reference mark displayed on the transfer substrate, so that a pair of the alignment marks formed in the transfer substrate by a pair of the marking beams irradiated from above to below to the transfer substrate corresponds to the marking beams.

18. The chip transfer apparatus according to claim 16, further comprising:

a second alignment monitoring unit configured to generate a marker beam image by taking a focused image of the pattern beam transmitted through the transfer substrate; and

a second alignment adjustment unit configured to change a position and an inclination of the mask in a direction crossing a traveling direction of the line beam by controlling the mask support so that a characteristic of the pattern beam is in agreement with a reference characteristic, the characteristic being collected from the focused image of a plurality of the pattern beams transmitted from top to bottom through the transfer substrate.

Technical Field

The present disclosure relates to a chip transfer method and a chip transfer apparatus, and more particularly, to a chip transfer method and a chip transfer apparatus capable of transferring a plurality of chips to preset positions on a substrate to be transferred by using a mask having a pattern.

Background

A micro light emitting diode (micro LED) display device is a display device in which all pixels constituting a screen are formed of micro LED chips. The micro LED display device has been researched and developed as a new generation display device, which consumes less power than a Liquid Crystal Display (LCD) device, has excellent durability, higher emission efficiency, and flexibility, and is advantageous in terms of large scale, light weight, and miniaturization.

The process of manufacturing the micro LED display device includes an EPI process, a chip process, a transfer process, and a bonding process. For example, the transfer process among the above-described processes is a process of forming a pixel by transferring a plurality of micro LED chips on a substrate in which various lines and thin film transistors are formed.

For example, a transfer substrate is prepared on a wafer in which micro LED chips are fabricated, and then the micro LED chips are attached to the transfer substrate and spaced apart from the wafer. Thereafter, a transfer substrate is disposed over the transferred substrate in which the various lines and thin film transistors are formed, and then the micro LED chips are separated from the transfer substrate and transferred to preset positions on the transferred substrate.

Micro LED chips have an extremely small size of 100 micrometers or less and are therefore difficult to handle. Therefore, the transfer of the micro LED chips in an individual chip unit (e.g., one unit) from the transfer substrate to the transferred substrate has great difficulty.

Background art of the present disclosure is disclosed in the following patent documents.

[ Prior Art document ]

[ patent document ]

(patent document 1) KR10-2019-0072196A

Disclosure of Invention

The present disclosure provides a chip transfer apparatus and a chip transfer method capable of transferring a plurality of chips to a predetermined position on a transferred substrate at a time by using a mask having a pattern.

According to an exemplary embodiment, a chip transfer method includes: preparing a transfer substrate having a plurality of chips provided thereon on a substrate to be transferred (hereinafter referred to as a transferred substrate); emitting a line beam; shaping a plurality of pattern beams from the line beam by using a mask disposed on a path of the line beam; separating the plurality of chips from the transfer substrate by irradiating a pattern beam to the transfer substrate; and placing a plurality of chips spaced apart from the transfer substrate on the transferred substrate.

In an exemplary embodiment, the separating of the plurality of chips may include irradiating the plurality of pattern beams to the plurality of chips to be separated from the transfer substrate in respectively corresponding manners.

In an exemplary embodiment, the chip transfer method may further include replacing the pattern by changing a position of the mask such that the line beam is shaped into the patterned beam by transmitting the line beam through a pattern having a size corresponding to each of the plurality of chips among the plurality of patterns formed in the mask.

In an exemplary embodiment, the chip transfer method may further include shaping the marking beam from the line beam by using a mask disposed on a path of the line beam; generating a marker beam image by irradiating a marker beam onto a transfer substrate and photographing the marker beam on the transfer substrate; and primarily aligning a position of the mask with respect to the transfer substrate by using the marker beam image.

In an exemplary embodiment, the shaping of the pattern beam and the shaping of the marker beam may be performed simultaneously by using the same line beam. Here, the marker beam may shape one portion of the self-line beam, and the pattern beam may shape the remaining portion of the self-line beam.

In an exemplary embodiment, the chip transfer method may further include: irradiating the pattern beam to a transfer substrate and generating a pattern beam image by photographing the pattern beam transmitted through the transfer substrate; and secondarily aligning a tilt and a distance of the mask with respect to the transfer substrate by using the pattern beam image for focusing the pattern beam transmitted through the mask and irradiated to the transfer substrate.

In an exemplary embodiment, the shaping of the marker beam may include forming a pair of marker beams at both sides of the pattern beam by transmitting the line beam through a pair of alignment marks among a plurality of alignment marks formed at each of both sides of the plurality of patterns, the pair of alignment marks being formed at both sides of the pattern having a size corresponding to the plurality of chips.

In an exemplary embodiment, the generation of the marker beam image may include: photographing a pair of alignment marks formed on a transfer substrate by a pair of mark beams irradiated from above to below the transfer substrate; and inserting the reference mark into an image obtained by photographing the alignment mark with reference to coordinates of the reference mark displayed on the transfer substrate corresponding to the marker beam.

In an exemplary embodiment, the primary alignment may include: calculating a shift of the alignment mark relative to the reference mark from the mark beam image; and adjusting the position and inclination of the mask by as much as the offset in a direction crossing the traveling direction of the line beam so that the alignment mark coincides with the reference mark.

In an exemplary embodiment, the generating of the pattern beam may include taking a focused image of the plurality of pattern beams while scanning the transfer substrate in an arrangement direction of the plurality of pattern beams transmitted through the transfer substrate from top to bottom.

In an exemplary embodiment, the secondary alignment may include: collecting characteristics of the pattern beam from the focused image and comparing the collected characteristics to reference characteristics; and adjusting the position and inclination of the mask in the traveling direction of the line beam so that the collected characteristic coincides with the reference characteristic.

According to another exemplary embodiment, a chip transfer apparatus for transferring a plurality of chips from a transfer substrate to a transferred substrate includes: a mask having a pattern for shaping the line beam into a plurality of pattern beams to be irradiated to the transfer substrate; a mask support configured to movably and rotatably support a mask; and a laser light source unit configured to emit a line beam toward the mask so as to transfer the plurality of chips.

In an exemplary embodiment, a plurality of different patterns may be formed in the mask, and one of the plurality of patterns may have a size corresponding to each of the plurality of chips.

In an exemplary embodiment, the chip transfer apparatus may further include a pattern replacement unit configured to change a position of the mask by controlling the mask support to transmit the line beam through a pattern having a size corresponding to the plurality of chips attached to the transfer substrate among the plurality of patterns.

In an exemplary embodiment, each of the plurality of patterns may include a plurality of pattern holes. Here, the pattern holes arranged on the same line in the width direction of the line beam may have the same shape, size, and arrangement as each other, and the pattern holes arranged in a direction crossing the width direction of the line beam may have different shapes, sizes, and arrangements from each other.

In an exemplary embodiment, a plurality of alignment marks may be formed at both sides of the plurality of patterns in the width direction of the line beam; the plurality of alignment marks may be arranged on the same line as the plurality of patterns, respectively, in a width direction of the line beam; and a plurality of pattern beams transmitted through a pattern having a size corresponding to the plurality of micro LED chips and a pair of mark beams transmitted through a pair of alignment marks disposed at both sides of the pattern having the size corresponding to the plurality of micro LED chips may be simultaneously irradiated to the transfer substrate.

In an exemplary embodiment, the chip transfer apparatus may further include a first alignment monitoring unit configured to generate a marker beam image by photographing a marker beam irradiated to the transfer substrate; and a first alignment adjusting unit configured to change a position and an inclination of the mask in a direction crossing a traveling direction of the line beam by controlling the mask support to coincide with a reference mark displayed on the transfer substrate, so that a pair of alignment marks formed in the transfer substrate by a pair of marking beams irradiated from above to below to the transfer substrate correspond to the marking beams.

In an exemplary embodiment, the chip transfer apparatus may further include: a second alignment monitoring unit configured to generate a marker beam image by taking a focused image of the pattern beam transmitted through the transfer substrate; and a second alignment adjusting unit configured to change a position and an inclination of the mask in a direction crossing a traveling direction of the line beam by controlling the mask support so that a characteristic of the pattern beam is in agreement with a reference characteristic, the characteristic being collected from focused images of the plurality of pattern beams transmitted from top to bottom through the transfer substrate.

Drawings

Fig. 1 is a schematic diagram illustrating a chip transfer apparatus according to an exemplary embodiment.

Fig. 2 is a schematic view illustrating a mask having a plurality of patterns formed therein according to an exemplary embodiment.

Fig. 3 to 7 are flow views of a chip transfer process by using a chip transfer method and a chip transfer apparatus according to an exemplary embodiment.

Fig. 8 is a flowchart of a chip transfer method according to an example embodiment.

Description of the reference numerals

1: a micro LED chip;

10: a mask;

20: a mask support;

30: a laser light source unit;

40: a mirror unit;

50: a pattern replacement unit;

60: a first alignment monitoring unit;

70: a first alignment adjustment unit;

80: a second alignment monitoring unit;

90: a second alignment adjustment unit;

l: a line beam;

l': a patterned beam of light;

LM: a marker beam;

m: aligning the mark;

m1: a first alignment mark;

m2: a second alignment mark;

m3: a third alignment mark;

m4: a fourth alignment mark;

m5: a fifth alignment mark;

p: a pattern;

p1: a first row pattern;

p2: a second row pattern;

p3: a third row pattern;

p4: a fourth row pattern;

p5: a fifth row pattern;

r, r1, r2, r3, r4, r 5: a row;

s: a substrate;

s': transferring the substrate;

s100, S200, S300, S410, S420, S430, S510, S520, S530, S600: a step of;

x: a left-right direction;

y: a vertical direction;

z: a front-back direction;

Δ x, Δ y, Δ θ: offsetting;

Δ Z1, Δ Z2, Δ Z3, Δ Z4: distance.

Detailed Description

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size of layers and regions may be exaggerated for clarity of illustration. Like reference numerals refer to like elements throughout.

The chip transfer method and the chip transfer apparatus according to the exemplary embodiments exhibit technical features of transferring a plurality of chips to set positions on a substrate to be transferred at a time by using a mask having a pattern.

In addition, the chip transfer method and the chip transfer apparatus according to the exemplary embodiments exhibit technical features for transferring a plurality of chips having different sizes onto a substrate by using a mask having a plurality of patterns.

The chip transfer method and the chip transfer apparatus according to the exemplary embodiments may be used in a process of transferring micro LED chips by using a laser beam.

In addition, the chip transfer method and the chip transfer apparatus according to the exemplary embodiments may be used in various processes of transferring various electronic devices from a sacrificial substrate to a target substrate by using a laser beam.

Hereinafter, a chip transfer method and a chip transfer apparatus according to exemplary embodiments will be described in detail with reference to a micro LED chip transfer process.

Fig. 1 is a schematic view illustrating a chip transfer apparatus according to an exemplary embodiment, and fig. 2 is a schematic view illustrating a mask having a plurality of patterns formed therein according to an exemplary embodiment. In addition, fig. 3 to 7 are flow views of a micro LED chip transfer process by using a chip transfer method and a chip transfer apparatus according to an exemplary embodiment.

Referring to fig. 1 to 7, a chip transfer apparatus according to an exemplary embodiment is described. Herein, the chip transfer apparatus may be referred to as a micro LED chip transfer apparatus.

The chip transfer apparatus according to an exemplary embodiment transfers a plurality of chips (e.g., a plurality of micro LED chips 1) from a transfer substrate S' to a substrate to be transferred (hereinafter, referred to as a transferred substrate). The chip transfer apparatus includes: a mask 10 having a pattern P to shape the line beam L into a pattern beam L ' and irradiate the pattern beam L ' to a transfer substrate S '; a mask support 20 supporting the mask 10 to be movable and rotatable; and a laser light source unit 30 emitting a line beam L toward the mask 10 to transfer the plurality of micro LED chips 1. In addition, the chip transfer apparatus may include a mirror unit 40 that reflects the plurality of pattern beams L 'shaped while passing through the mask 10 to the transfer substrate S'.

Here, a plurality of patterns P having different sizes may be formed in the mask 10. More specifically, a plurality of patterns P having different shapes, sizes, and arrangements may be formed in the mask 10. In addition, one of the plurality of patterns P may have a size corresponding to each of the plurality of micro LED chips 1. Here, the size-corresponding characteristic indicates that the size of one micro LED chip 1 coincides with the size of one pattern beam L' within a predetermined tolerance value. Here, the size of one pattern beam may be larger than that of one micro LED chip 1 within a predetermined tolerance value. The tolerance value may be referred to herein as a tolerance or tolerance.

In addition, one of the plurality of patterns P may have a shape and arrangement in conformity with each of the plurality of micro LED chips 1.

In addition, the chip transfer apparatus may further include a pattern replacing unit 50 that changes a position of the mask 10 by controlling the mask support 20 such that the line beam L passes through a pattern having a size corresponding to the plurality of micro LED chips 1 attached to the transfer substrate S' among the plurality of patterns P.

The chip may be a micro LED chip 1. Alternatively, the chip may include various electronic device chips other than the micro LED chip 1.

The micro LED chip 1 may be manufactured by a method of growing a thin film made of an inorganic material such As Al, Ga, N, P, As, and In on a sapphire or silicon substrate. The micro LED chip 1 may have a size of, for example, 10 to 100 micrometers. The micro LED chips 1 may include blue, green, and red micro LED chips. The fully fabricated micro LED chip 1 may be separated from the sapphire or silicon substrate and then attached to a transfer substrate S'. On the other hand, the micro LED chip 1 may be directly manufactured by a method of growing a thin film made of an inorganic material such As Al, Ga, N, P, As, and In on the transfer substrate S'.

The transfer substrate S' may be a wafer on which a plurality of micro LED chips 1 are arranged in an array type and attached. Alternatively, the plurality of micro LED chips 1 may be grown directly on the transfer substrate S'. The transfer substrate S' may be referred to as a temporary substrate.

Hereinafter, for convenience of description, the transferred substrate may be simply referred to as a substrate S.

The substrate S may be glass. Various lines and thin film transistors may be formed on the substrate S. The blue, green, and red micro LED chips may be transferred from the transfer substrate S' to the pixel region of the substrate S by using a chip transfer apparatus. Alternatively, the substrate S may have different kinds and materials. In addition, the substrate S may be referred to as a target substrate. The substrate S and each of the various lines and thin film transistors formed on the substrate S may be made of, for example, a transparent material.

The transfer substrate S' may be supported by a first stage (not shown), and the substrate S may be supported by a second stage (not shown). The first and second platforms may be housed in a chamber (not shown) and face each other in a vertical direction Y.

The first platform may have, for example, a rectangular plate shape or a circular plate shape and include an opening defined at a central portion thereof. The first stage may have an area larger than that of the transfer substrate S ', and the opening may have an area smaller than that of the transfer substrate S'.

An adsorber (not shown) may be provided at a lower portion of the first platform. Adsorbers may be disposed along the perimeter of the opening. The transfer substrate S' may be adsorbed to a lower portion of the first stage by the adsorber and supported by the first stage. Here, a portion of the top surface of the transfer substrate S' may be exposed to the outside through the opening. Here, the pattern beam L 'may be irradiated to the transfer substrate S' through the opening. Here, the first stage may have various shapes and various methods for supporting the transfer substrate S'.

The second platform may be disposed below the first platform. The second stage may support the substrate S. The second platform may have, for example, a rectangular plate shape. The substrate S may be seated on and supported by a top surface of the second stage. The top surface of the second stage may have an area greater than that of the substrate S. The second platform may have various structures and shapes.

Since the transfer substrate S 'is mounted on the first stage and the substrate S is mounted on the second stage, the transfer substrate S' and the substrate S may face each other in a vertical direction.

The chip transfer apparatus may further include first and second driving units (not shown). The first and second stages are individually movable and rotatable by first and second driving units. Accordingly, the transfer substrate S' and the substrate S may be aligned with each other in the vertical direction Y by individually moving the first and second stages using the first and second driving units.

The first driving unit may move the first stage in the front-rear direction Z, the left-right direction X, and the vertical direction Y and rotate the first stage with respect to the vertical direction Y. In addition, the second driving unit may move the second stage in the front-rear direction Z, the left-right direction X, and the vertical direction Y and rotate the second stage with respect to the vertical direction Y. For this purpose, the first and second driving units may have various constitutions and methods.

The mask 10 may be supported by the mask support 20 and disposed between the mirror unit 40 and the laser source unit 30. Accordingly, the mask 10 may transmit the line beam L traveling from the laser light source unit 30 to the mirror unit 40 via the pattern P defined in the mask 10 and shape the line beam L into the shape of the pattern P. The pattern beam L 'shaped into the shape of the pattern P may be reflected by the mirror unit 40 and irradiated to the transfer substrate S'.

The mask 10 may have a plate shape. The pattern P may be formed in the mask 10. The pattern P may include a plurality of pattern holes. The plurality of pattern holes may be arranged in a width direction of the line beam L to form a line, and the line beam L is transmitted through the plurality of pattern holes to shape the pattern P.

Alternatively, a plurality of patterns P may be formed in the mask 10. The line beam L is transmitted through the plurality of patterns P to shape the pattern shape. The plurality of patterns P may be arranged in the vertical direction Y.

The plurality of patterns P may be referred to as a plurality of row r patterns P. Here, the plurality of rows r may include, for example, a first row r1, a second row r2, a third row r3, a fourth row r4, and a fifth row r 5. A plurality of patterns P may be formed along each row, and include a first row pattern P1, a second row pattern P2, a third row pattern P3, a fourth row pattern P4, and a fifth row pattern P5. Alternatively, the number of the plurality of rows may be set differently.

Each of the plurality of patterns P may include a plurality of pattern holes. A plurality of pattern holes arranged on the same line in the left-right direction X may form one row to form one pattern P.

The plurality of pattern holes may transmit the line beam L therethrough to shape the pattern holes. That is, a portion of the line beam L reaching the mask 10 may pass through the plurality of pattern holes and be shaped into a pattern beam L', and the remaining portion of the line beam L may not pass through the mask 10. Accordingly, the pattern beam L 'having passed through the plurality of pattern holes may be irradiated to the transfer substrate S' in the same pattern shape as the plurality of pattern holes.

The plurality of pattern holes forming one pattern P arranged on the same line in the width direction (e.g., the left-right direction X) of the line beam L may have the same shape, size, and arrangement as one another. That is, the pattern holes forming the same row r as each other may have the same shape, size, and arrangement as each other. Here, the arrangement indicates left and right gaps between the pattern holes. As described above, the pattern holes having the same shape, size, and arrangement in the left-right direction X may be arranged to form one line.

In addition, at least one of the shape, size, and arrangement of the pattern holes arranged in a direction crossing the width direction of the line beam L (for example, in the vertical direction Y) may be different. That is, when the rows r are different, at least one of the shape, size, and arrangement of the pattern holes may be different. For example, pattern holes having different shapes, sizes, or arrangements may be arranged in the vertical direction Y.

That is, at least one of the shape, size, and arrangement of the pattern holes of the first row pattern P1 formed along the first row r1 and the pattern holes of the second row pattern P2 formed along the second row r2 is different. Similarly, at least one of the shape, size, and arrangement of the pattern holes of the first row pattern P1 and the pattern holes of the third row pattern P3 is different. That is, at least one of the shape, size, and arrangement of the pattern holes of the pattern formed along each row r is different. Accordingly, the mask 10 may shape the pattern light beams L' as many as the number of the patterns P differently. That is, the shape, size, and arrangement of the pattern beam L 'irradiated to the transfer substrate S' may be determined by the shape, size, and arrangement of the pattern P transmitted through the line beam L.

The plurality of alignment marks M may be formed at each of both sides of the plurality of patterns P in the width direction of the line light beam L. For example, the plurality of alignment marks M may include a first alignment mark M1, a second alignment mark M2, a third alignment mark M3, a fourth alignment mark M4, and a fifth alignment mark M5. The alignment mark may be arranged on the same line as the plurality of patterns P in the width direction of the line beam.

For example, the alignment mark and the pattern disposed on the first row may be disposed on the same line in the left-right direction X. Similarly, the alignment marks and the patterns disposed on each row may be disposed on the same line in the left-right direction X. The alignment marks may be referred to as alignment holes. The alignment marks may have a cross shape. Accordingly, the marking beam LM shaped while passing through the alignment mark may show a cross shape on the transfer substrate S'. Alternatively, the alignment mark may have various shapes.

The line beam L having a shape extending in the left-right direction X may be shaped into a plurality of pattern beams L 'and a plurality of marker beams LM while passing through the pattern holes and the alignment marks formed in one of the plurality of rows, and irradiated to the transfer substrate S' in the shape of a plurality of spots. Here, the shape and size of the pattern beam irradiated to the transfer substrate S' may be determined by the shape and size of the pattern holes in the row through which the line beam L passes. In addition, the alignment state of the mask 10 with the transfer substrate S 'can be checked by observing the shape and position of the cross-shaped marker beam LM irradiated to the transfer substrate S'.

The mask support 20 may movably and rotatably support the mask 10. For example, the mask support 20 may support the mask 10 to move in the left-right direction X, the front-rear direction Z, and the vertical direction Y. Here, the mask support 20 may support the mask 10 such that four corners (i.e., upper, lower, left, and right corners) of the mask 10 move different distances in the front-rear direction Z. In addition, the mask support 20 may support the mask 10 to rotate with respect to the front-rear direction Z.

The mask support 20 may be spaced upward from the first stage on which the transfer substrate S' is supported, and disposed between the laser light source unit 30 and the mirror unit 40. The mask support 20 may have a predetermined area by extending in the vertical direction Y and the left-right direction X, and have a predetermined thickness in the front-rear direction Z. For example, the mask support 20 may have a rectangular plate shape with an open center portion. Alternatively, the mask support 20 may have various shapes. The mask support 20 serves to support the mask 10.

The mask support 20 may support the circumference of the mask 10. The plurality of patterns P and the alignment marks M defined in the central portion of the mask 10 may be exposed to the laser source unit 30 via an opening at the central portion of the mask support 20.

A driving body (not shown) may be provided to the mask support 20. The driving body may include at least one of a front and rear driving body (not shown), a left and right driving body (not shown), a vertical driving body (not shown), and a rotary driving body (not shown). The mask 10 may be supported by a driving body. The mask support 20 may adjust the position and inclination of the mask in a plurality of directions by using a driving body.

The mask support 20 may change the position of the mask 10 such that the line beam L passes through a pattern P corresponding to the size, shape and arrangement of the micro LED chips 1 attached to the transfer substrate S'. That is, the mask support 20 may move and rotate the mask in a plurality of directions to select the pattern P through which the line beam L is transmitted among the plurality of patterns P. Accordingly, the mask 10 may transmit the line light beam L through a pattern in one row corresponding to the shape, size, and arrangement of the plurality of micro LED chips 1 attached to the transfer substrate S' among the plurality of patterns P. Accordingly, the shape, size, and arrangement of the pattern light beam L 'irradiated to the transfer substrate S' may be selected corresponding to the shape, size, and arrangement of the micro LED chips 1.

The laser light source unit 30 may be spaced apart from the mask 10 in, for example, the front-rear direction Z, and emit a laser beam toward the mask 10 in the form of, for example, a line beam L. The line beam L may extend in the left-right direction X and be emitted in the front-rear direction Z. The laser light source unit 30 may have various laser light sources.

The mirror unit 40 may be spaced upward from the transfer substrate S' and face the mask in the front-rear direction Z. The mirror unit 40 may reflect a plurality of pattern beams L 'shaped while passing through the mask 10 to the transfer substrate S'. The mirror unit 40 may be inclined by 45 ° with respect to the traveling direction of the pattern beam L'.

The mirror unit 40 may reflect the plurality of pattern light beams L 'transmitted through the pattern having a size corresponding to the plurality of micro LED chips and the pair of mark light beams LM transmitted through the pair of alignment marks disposed at both sides of the pattern having a size corresponding to the plurality of micro LED chips to the transfer substrate S'. Accordingly, the plurality of pattern beams L 'and the pair of marker beams LM can be simultaneously irradiated to the transfer substrate S'.

The pattern beam L 'and the marker beam LM may travel in the front-rear direction Z between the mask 10 and the mirror unit 40, and be reflected downward by the mirror unit 40 to travel in a vertical direction toward the transfer substrate S'.

The pattern replacement unit 50 may change the position of the mask 10 by controlling the mask support 20 such that the line beam L passes through a pattern having a size corresponding to the plurality of micro LED chips 1 attached to the transfer substrate S' among the plurality of patterns P.

The pattern replacement unit 50 may change the position of the mask 10 by: receiving information of the size, shape, and arrangement of the micro LED chips 1 attached to the transfer substrate S' from a process controller (not shown) performing a process of transferring the micro LED chips; selecting a pattern corresponding to the received size, shape, and arrangement of the micro LED chips; and controlling the mask support 20 to transmit the line beam L through the selected pattern.

The micro LED chip transfer apparatus according to an exemplary embodiment may include a first alignment monitoring unit 60, a first alignment regulating unit 70, a second alignment monitoring unit 80, and a second alignment regulating unit 90.

The first alignment monitoring unit 60 may be an optical camera. The first alignment monitoring unit 60 may be disposed in a plurality of chips and disposed over the transfer substrate S'. The first alignment monitoring unit 60 may photograph the marker light beam LM irradiated to the transfer substrate S' and generate an image of the marker light beam. The first alignment monitoring unit 60 may be used to check the position and shape of the marker beam LM irradiated to the transfer substrate S'.

The first alignment regulating unit 70 may change the position and inclination of the mask in a direction crossing the traveling direction of the line beam L by controlling the mask support 20 to coincide with the reference mark marked on the transfer substrate S ' such that a pair of alignment marks formed on the transfer substrate S ' by a pair of marking beams LM irradiated from above to below to the transfer substrate S ' correspond to the marking beams LM. The first alignment adjusting unit 70 may adjust the alignment state of the mask 10 by receiving the marker beam image from the first alignment monitoring unit 60 and controlling the mask support 20 according to the position and shape of the alignment mark displayed in the marker beam image.

Since the position of the alignment mark and the position of the reference mark on the transfer substrate S 'are checked by using the first alignment monitoring unit 60 and the first alignment adjusting unit 70, and the alignment state of the mask 10 is adjusted such that the alignment mark is moved to the reference mark position, the position of the mask 10 may be primarily aligned with respect to the transfer substrate S'.

The second alignment monitoring unit 80 may be a beam profile camera. The second alignment monitoring unit 80 may be movably installed under the substrate S. The second alignment monitoring unit 80 may generate a pattern beam image by taking a focused image of the pattern beam L 'transmitted through the transfer substrate S'. The second alignment monitoring unit 80 may be used to check the focal shape and characteristics of the pattern beam L 'irradiated onto the transfer substrate S'. Here, the characteristic of the pattern beam L 'may include a contrast and an energy distribution curve of a focal point of the pattern beam L'. Here, the energy concentration and uniformity of the pattern beam L 'may be checked from the energy distribution curve, and the visibility may be checked from the contrast of the pattern beam L'.

The second alignment adjusting unit 90 may change the position and inclination of the mask 10 in the traveling direction of the line beam L by controlling the mask support 20 to conform the characteristics of the pattern beam collected from the focused image of the plurality of pattern beams L 'transmitted from the top down through the transfer substrate S' to the reference characteristics. To this end, the second alignment adjusting unit 90 may receive the pattern beam image from the second alignment monitoring unit 80 and adjust the alignment state of the mask 10 by controlling the mask support 20 such that at least one of the energy distribution curve and the contrast of the pattern beam inspected from the pattern beam image coincides with at least one of the reference energy distribution curve and the reference contrast.

Since the alignment state of the mask 10 is adjusted so that the energy distribution curve of the pattern beam coincides with the reference energy distribution curve, and the contrast of the pattern beam coincides with the reference contrast by checking the state of the pattern beam L ' irradiated on the transfer substrate S ' using the second alignment monitoring unit 80 and the second alignment adjusting unit 90, the position of the mask 10 can be secondarily aligned with respect to the transfer substrate S '. Therefore, distortion of the pattern beam L' can be avoided.

When the position of the mask 10 is aligned with respect to the transfer substrate S ', the pattern beam L ' may be irradiated exactly to the attachment surface between the transfer substrate S ' and the micro LED chip 1 attached to the transfer substrate S ', and the micro LED chip 1 may be smoothly spaced apart from the transfer substrate S ' and fall exactly to a desired position.

As described above, the chip transfer apparatus according to the exemplary embodiments can transfer a plurality of chips to a predetermined position of a transferred substrate at a time by using a mask having a pattern.

That is, since a mask having a pattern is used, the micro LED chip can be transferred in a pattern unit.

In addition, the chip transfer apparatus according to an exemplary embodiment may transfer micro LED chips having a plurality of sizes to predetermined positions of a transferred substrate by using a mask having a plurality of patterns. More specifically, according to an exemplary embodiment, a micro LED chip having a desired size among a plurality of sizes may be simply transferred to a predetermined position of a transferred substrate by using one mask having a plurality of different patterns.

That is, micro LED chips having various sizes may be simply transferred to predetermined positions of a transferred substrate so that although the sizes of the micro LED chips are changed as a production model is changed, a mask is simply moved to replace a pattern through which a laser line beam passes instead of being replaced, and attachment surfaces between the transfer substrate and the plurality of micro LED chips are irradiated by adjusting the size, shape, and gap of a plurality of pattern beams transmitted through the pattern corresponding to the changed sizes of the micro LED chips.

Accordingly, time for replacing the mask can be saved to shorten a process time, a work load of a worker due to the mask replacement can be reduced, and alignment defects occurring during the mask replacement can be substantially avoided to ensure stable laser beam quality. Therefore, the productivity of the micro LED chip transfer process can be improved.

Fig. 8 is a flowchart of a chip transfer method according to an example embodiment.

Hereinafter, a chip transfer method according to an exemplary embodiment will be described.

The chip transfer method according to an exemplary embodiment includes: preparing a transfer substrate S' on which a plurality of chips (for example, a plurality of micro LED chips 1) are disposed on a transferred substrate (hereinafter, referred to as a substrate S); emitting a line beam L; shaping a plurality of pattern beams L' from the line beam L by using a mask 10 disposed on a path of the line beam L; separating the plurality of micro LED chips 1 from the transfer substrate S ' by irradiating the pattern beam L ' to the transfer substrate S '; and mounting a plurality of chips spaced apart from the transfer substrate S' on the substrate S.

In addition, the chip transfer method according to an exemplary embodiment may further include replacing the pattern to change the position of the mask 10 between preparation of the transfer substrate S 'on the substrate S and emission of the line beam L, such that the line beam L is shaped into the patterned beam L' by transmitting the line beam L through a pattern having a size corresponding to each of the plurality of micro LED chips 1 among the plurality of patterns P formed in the mask 10.

Here, the characteristic corresponding in size means that the sizes coincide with each other within a predetermined tolerance value. For example, the size (or ' area ') of one micro LED chip 1 and the focused size of one pattern beam L ' may coincide with a predetermined tolerance (e.g., tolerance) with each other. Here, the size of the pattern beam may be relatively large. Therefore, when the pattern beam is irradiated to the attachment surface between the micro LED chip and the transfer substrate S', the pattern beam may be uniformly irradiated from the central portion of the attachment surface to the edge.

In addition, the chip transfer method according to an exemplary embodiment may further include: shaping the marker light beam LM from the line light beam L by using a mask 10 disposed on the path of the line light beam L between the emission of the line light beam L and the separation of the plurality of micro LED chips 1; generating a marking beam image by irradiating the marking beam LM to the transfer substrate S 'and photographing the marking beam LM on the transfer substrate S'; and primarily aligning the position of the mask 10 with respect to the transfer substrate S' by using the marker beam image. Here, the shaping of the marker beam LM and the shaping of the pattern beam L' may be performed simultaneously.

More specifically, the shaping of the marker light beam LM and the shaping of the pattern light beam L' may be performed simultaneously on the same line in the width direction of the line light beam L by using the same line light beam L.

That is, the marker beam LM and the pattern beam L' may be shaped from the same line beam L at the same time. Here, one portion of the line beam L may shape the marker beam LM, and the remaining portion of the line beam L may shape the patterning beam L'. That is, the marker beam LM may shape both side edges of the line beam L, and the pattern beam L' may shape the rest of the line beam L.

In addition, the chip transfer method according to an exemplary embodiment may further include: generating a pattern beam image by irradiating the pattern beam L 'to the transfer substrate S' and photographing the pattern beam L 'transmitted through the transfer substrate S' between the primary alignment and the separation of the plurality of micro LED chips 1; and secondarily aligning a distance and a tilt of the mask 10 with respect to the transfer substrate S 'by using the pattern beam image for focusing the pattern beam transmitted through the mask 10 and irradiated to the transfer substrate S'.

The chip transfer method according to an exemplary embodiment may transfer a plurality of micro LED chips 1 from a transfer substrate S' to a substrate S. The chip transfer method according to an exemplary embodiment may be referred to as a micro LED chip transfer method.

Step S100 first, referring to fig. 1, a transfer substrate S' on which a plurality of micro LED chips 1 are disposed is prepared on a substrate S. Here, a plurality of micro LED chips 1 may be fabricated on a transfer substrate S'. Alternatively, a plurality of micro LED chips 1 may be fabricated on a separate sacrificial substrate and then attached to a transfer substrate S'.

First and second stages (not shown) facing each other in the vertical direction Y may be prepared, the transfer substrate S' may be supported by a bottom surface of the first stage, and the substrate S may be seated on a top surface of the second stage. Here, the transfer substrate S' and the substrate S may be aligned with each other by moving and rotating each of the first and second stages in a plurality of directions using first and second driving units (not shown).

Here, a method for aligning the transfer substrate S' and the substrate S with each other in the vertical direction Y may be variously provided. The feature that aligns the transfer substrate S' and the substrate S with each other may be referred to as a substrate alignment process.

Step S200: thereafter, the pattern is replaced by changing the position of the mask 10 such that the line beam L is shaped into a patterned beam L' by transmitting the line beam L through a pattern having a size corresponding to the plurality of micro LED chips 1 among the plurality of patterns P formed in the mask 10.

Fig. 3 is a flow diagram illustrating a micro LED chip transfer process in which a line beam L is transmitted through features of a pattern formed in the third row r 3. In addition, fig. 4 is a flow diagram illustrating a micro LED chip transfer process that moves the mask 10 to transmit the line beam L through the features of the pattern formed in the first row r 1.

Referring to fig. 3 and 4, the line beam L may be transmitted through the pattern in one of the plurality of lines of the pattern P by moving the mask 10 in the vertical direction Y. Here, the alignment mask 10 may be distorted with respect to the transfer substrate S'.

Step S300: the line beam L is emitted toward the transfer substrate S'. The line beam L may be emitted from the light source unit 30 toward the transfer substrate S ', transmitted through the mask 10 and the mirror unit 40 disposed on a path between the laser source unit 30 and the transfer substrate S ', and then irradiated to the transfer substrate S '.

Step S410: the marker beam LM is shaped from the line beam L by using a mask 10 disposed on the path of the line beam L. For example, a pair of mark light beams LM are respectively formed at both sides of the pattern light beam L' by transmitting the line light beam L through a pair of alignment marks among the plurality of alignment marks M formed at both sides of the plurality of patterns P, the pair of alignment marks being formed at both sides of the pattern having a size corresponding to that of the plurality of micro LED chips 1. The pair of mark light beams LM are shaped into the shape of an alignment mark, for example, a cross shape, and travel in the front-rear direction Z toward the mirror unit 40.

Step S420: thereafter, a marker beam image is generated by irradiating the marker beam LM to the transfer substrate S 'and photographing the marker beam LM on the transfer substrate S'. That is, the pair of marker light beams LM traveling in the front-rear direction Z toward the mirror unit 40 are reflected by the mirror unit 40 and travel to the transfer substrate S ', and a pair of alignment marks formed on the transfer substrate S ' by the pair of marker light beams LM irradiated from above to below to the transfer substrate S ' are photographed by the first alignment monitoring unit 60. Here, the reference mark previously marked on the transfer substrate S' may also be photographed in the marker beam image. Alternatively, a reference mark may be inserted into the captured alignment mark image with reference to the coordinates (0,0) of the reference mark marked on the transfer substrate S' corresponding to the marker light beam LM.

Fig. 5 is a flowchart illustrating a micro LED chip transfer process of adjusting the features of the position and inclination of the mask 10 in the primary alignment of the mask 10.

Step S430: thereafter, the position of the mask 10 is primarily aligned with respect to the transfer substrate S' by using the marker beam image. Specifically, the position and inclination of the mask 10 are adjusted by: calculating a shift Δ x, a shift Δ y, and a shift Δ θ of the alignment mark with respect to the reference mark from the mark beam image input to the first alignment adjusting unit 70 from the first alignment monitoring unit 60; the mask support 20 is controlled by the first alignment monitoring unit 60; and moving and rotating the mask 10 by as much as the offset in the vertical direction Y and the front-rear direction Z intersecting the traveling direction of the line beam L (refer to fig. 4 and 5). Here, the inclination denotes an inclination or a rotation angle of the mask 10 with respect to the X-Z plane.

Thereafter, the generation of the marker beam image and the primary alignment may be repeated so that the alignment mark and the reference mark coincide on the transfer substrate S'. Through the above-described process, the primary alignment of the mask 10 may be completed, and the marker beam LM may be irradiated to a desired position on the transfer substrate S'. Therefore, the pattern beam L 'disposed between the marker beams LM can also be irradiated to exactly a desired position on the transfer substrate S'.

Step S510: a plurality of pattern beams L' are shaped from the line beam L by using a mask 10 disposed on a path of the line beam L. Here, this process may be performed in conjunction with the shaping of the marker beam LM from the line beam L described above. For example, the line beam L is emitted from the laser light source unit 30 to the mask 10 and then shaped into a patterned beam L' while passing through the mask 10.

Fig. 6 is a flowchart illustrating a micro LED chip transfer process of photographing a feature of a focused image of a pattern light beam L ' transmitted through a transfer substrate S ' while scanning the transfer substrate S ' by using the second alignment monitoring unit 80.

Step S520: thereafter, a pattern beam image is generated by irradiating the pattern beam L 'to the transfer substrate S' and photographing the pattern beam L 'transmitted through the transfer substrate S'. That is, the pattern beam L 'transmitted through the mask 10 travels to the mirror unit 40 and is reflected by the mirror unit 40, thus being irradiated to the transfer substrate S'. In addition, by using the second alignment monitoring unit 80 (refer to fig. 6), a pattern beam image is generated by photographing the pattern beam L ' transmitted through the transfer substrate S ' to form a focus on the attachment surface between the micro LED chip 1 and the transfer substrate S '.

Here, while scanning the transfer substrate S ' in the arrangement direction of the plurality of pattern light beams L ' transmitted through the transfer substrate S ' from top to bottom, focused images of the plurality of pattern light beams are taken. This process is performed between the primary alignment and the separation of the plurality of micro LED chips. That is, a pattern beam image is generated by photographing the pattern beam L' transmitted through the primarily aligned mask 10.

Fig. 7 is a flowchart illustrating a micro LED chip transfer process of adjusting the features of the position and inclination of the mask 10 in the secondary alignment of the mask 10.

Step S530: thereafter, the inclination and distance of the mask 10 are secondarily aligned with respect to the transfer substrate S ' by using the pattern beam image by using the second alignment adjusting unit 90 for focusing the pattern beam L ' irradiated onto the transfer substrate S '. That is, the characteristics of the pattern beam are collected from the focused image taken by the second alignment monitoring unit 80. The characteristic of the pattern beam collected from the focused image may include at least one of an energy profile and a contrast of the pattern beam. Subsequently, by using the second alignment adjusting unit 90, the position and inclination of the mask 10 are adjusted in the traveling direction of the line beam L (for example, in the front-rear direction Z) by comparing the collected characteristics with the reference characteristics and controlling the mask support 20 so that the collected characteristics coincide with the reference characteristics. Here, the position is a position in the front-rear direction Z, and the inclination is an inclination with respect to the X-Y plane.

Here, four corners (i.e., upper, lower, left, and right corners) of the mask 10 may be moved by different distances Δ Z1 to the distance Δ Z4 or the same distance, respectively, in the front-rear direction Z (refer to fig. 7). For example, when the mask 10 is pulled or pushed toward the laser light source unit 30 in the front-rear direction Z, the pattern beam L' may have a sharp focal point, and here, the energy distribution curve may increase or decrease in the push or pull direction to have a desired value.

Through the above-described process, the jitter of the focused image of the pattern beam L' may be compensated, and the above-described generation and secondary alignment of the pattern beam image may be repeated to compensate for the jitter of the focused image to a desired level. Accordingly, alignment between the mask 10 and the transfer substrate S' can be completed.

Step S600: thereafter, when the pattern beam L 'shaped while passing through the mask 10 completing the primary and secondary alignment is irradiated to the transfer substrate S', thermal energy is applied to the attachment surface between the transfer substrate S 'and the micro LED chips 1, and the plurality of micro LED chips 1 are spaced apart from the transfer substrate S'. Specifically, a plurality of pattern beams may be simultaneously irradiated to a plurality of micro LED chips 1 to be spaced apart from the transfer substrate S' in a respectively corresponding manner. Here, the characteristic irradiated in a corresponding manner means that one pattern beam is irradiated to one micro LED chip 1. In this process, the plurality of micro LED chips 1 may be transferred to the substrate S, i.e., the transferred substrate S, at once in a pattern unit.

Here, since the mask 10 is aligned with the transfer substrate S ' and the transfer substrate S ' is aligned with the substrate S, the plurality of micro LED chips 1 may be smoothly separated from the transfer substrate S ', and the micro LED chips 1 may be seated on positions on the substrate in a process to be described later.

Thereafter, each of the plurality of micro LED chips 1 spaced apart from the transfer substrate S' is precisely placed at a desired position on the substrate S. Here, the plurality of micro LED chips 1 are dropped downward from the transfer substrate S 'by using the own weight of the plurality of micro LED chips 1 spaced apart from the transfer substrate S'. In this process, the micro LED chip 1 may be transferred to the substrate S.

Here, a thin film layer (not shown) made of a bonding material may be disposed on the top surface of the substrate S so that the chip attachment portion of the substrate S and the substrate attachment portion of the micro LED chip 1 are attached and electrically connected to each other.

The film layer made of the bonding material may be an Anisotropic Conductive Film (ACF). The thin film layer made of the bonding material may include a plurality of conductive particles distributed therein and have a predetermined adhesive property. The thin film layer made of the bonding material may be referred to as a conductive material layer or an anisotropic conductive film.

When the separation of the chips and the transfer of the separated chips to the transferred substrate are repeated while the pattern beam L ' scans the transfer substrate S ' in the front-to-rear direction, and all of the plurality of micro LED chips 1 are separated from the transfer substrate S ' and transferred from the transfer substrate S ' to the substrate S, the next transfer substrate S ' may be loaded on the first stage and the next transfer process may be performed.

Thereafter, when the pixel formation is completed by respectively transferring the plurality of micro LED chips 1 to all desired positions of the substrate S (e.g., the transferred substrate S), the substrate S may be moved to a next process position and a subsequent process may be performed.

The subsequent process may be a process of attaching and electrically connecting the micro LED chip 1 to a thin film layer made of a bonding material provided on the substrate S by applying heat to an attachment surface between the micro LED chip 1 and the substrate S.

As described above, in the chip transfer process applied with the chip transfer method and apparatus according to the exemplary embodiment, although the size of the micro LED chip 1 on the transfer substrate S' is changed as the production model is changed, only the pattern position is changed by moving the mask 10 instead of replacing the mask 10.

In particular, the micro LED display device may include micro LED chips constituting pixels having sizes varying according to a production model. Therefore, even when the production model of the micro LED display device to be produced in the process facility is changed, only the pattern position can be changed by moving the mask 10 instead of replacing the mask 10.

That is, according to an exemplary embodiment, since the production model is changed but the mask 10 is unnecessarily replaced, a worker does not have to stop the process facility, replace the current mask with a new mask having a pattern with a size corresponding to the size of the changed micro LED chip, and readjust the size, shape, and gap of the laser pattern beam. Therefore, the overall process time can be reduced.

In addition, according to the exemplary embodiments, since the primary and secondary alignments are sequentially performed after the pattern replacement, stable laser quality may be ensured. Accordingly, the process of transferring the micro LED chip may have improved productivity.

In addition, since the laser line beam is processed into a plurality of laser pattern beams spaced apart from each other by transmitting the laser line beam through the pattern P of the mask 10 and the plurality of processed laser pattern beams L ' are irradiated to the attachment surfaces between the plurality of micro LED chips and the transfer substrate S ' while the micro LED chips 1 are spaced apart from the transfer substrate S ', the plurality of micro LED chips can be separated at one time and the plurality of micro LED chips 1 can be simultaneously transferred to a wide area on the substrate S being transferred. Therefore, the processing speed can be improved.

According to an exemplary embodiment, a plurality of chips may be transferred to a predetermined position on a transferred substrate at a time by using a mask having a pattern.

For example, when applied to a micro LED chip transfer process, when transferring a micro LED chip having a size equal to or less than 100 micrometers from a transfer substrate to a transferred substrate, as many micro LED chips as the number of a plurality of pattern beams shaped by using a pattern may be transferred at once.

Accordingly, the process time may be reduced, and the productivity of the micro LED chip transfer process may be improved.

Although the deposition apparatus and method have been described with reference to particular embodiments, they are not limited thereto. Accordingly, it will be readily understood by those skilled in the art that various modifications and changes may be made thereto without departing from the spirit and scope of the present invention as defined by the appended claims.