阅读说明：本技术 一种高功率快响应热发射红外准直光源结构 (High-power quick-response thermal emission infrared collimation light source structure ) 是由 赖建军 江湃 杨静 曹伟杰 于 2020-12-17 设计创作，主要内容包括：一种高功率快响应热发射红外准直光源结构,包括：散热基座,用于安装热发射芯片；热发射芯片,用于朝向红外准直模块发射红外光束；所述热发射芯片设置于所述散热基座上；红外准直模块,用于对所述热发射芯片发射的红外光束进行准直；所述红外准直模块与所述热发射芯片相对；其中,所述热发射芯片与所述红外准直模块之间通过间隔层连接,或者,所述散热基座与所述红外准直模块之间通过支撑架连接。本申请相比红外激光光源,热发射红外光源具有低得多的成本,且其发射波长可以在从近红外到长波红外波段的宽广范围里通过表面结构设计任意调节,使其具有更强的适应性、灵活性和选择性。(A high power, fast response thermally-emitting infrared collimated light source structure comprising: a heat dissipation base for mounting a heat emitting chip; the thermal emission chip is used for emitting infrared beams towards the infrared collimation module; the heat emission chip is arranged on the heat dissipation base; the infrared collimation module is used for collimating the infrared beam emitted by the heat emission chip; the infrared collimation module is opposite to the heat emission chip; the thermal emission chip is connected with the infrared collimation module through a spacing layer, or the heat dissipation base is connected with the infrared collimation module through a support frame. Compared with an infrared laser light source, the thermal emission infrared light source has much lower cost, and the emission wavelength of the thermal emission infrared light source can be randomly adjusted in a wide range from near infrared to long-wave infrared bands through surface structure design, so that the thermal emission infrared light source has stronger adaptability, flexibility and selectivity.)

1. A high power fast response thermal emission infrared collimated light source structure, comprising:

a heat dissipation base for mounting a heat emitting chip;

the thermal emission chip is used for emitting infrared beams towards the infrared collimation module; the heat emission chip is arranged on the heat dissipation base;

the infrared collimation module is used for collimating the infrared beam emitted by the heat emission chip; the infrared collimation module is opposite to the heat emission chip;

the thermal emission chip is connected with the infrared collimation module through a spacing layer, or the heat dissipation base is connected with the infrared collimation module through a support frame.

2. The high-power fast-response thermal emission infrared collimation light source structure according to claim 1, wherein a thermal emission array is arranged on the thermal emission chip, an infrared collimation array is arranged on the infrared collimation module, and the thermal emission array is arranged corresponding to the infrared collimation array.

3. The high-power fast-response thermal emission infrared collimation light source structure of claim 2, wherein a cavity is arranged on the thermal emission chip corresponding to the thermal emission array.

4. The high power fast response thermally emitting infrared collimated light source structure of claim 2, wherein a gap is formed between said thermally emitting array and said infrared collimating array.

5. The high power fast response thermally emitting infrared collimated light source structure of claim 4, wherein said gap width is greater than or equal to 100 μm.

6. The high power fast response thermally emitting infrared collimated light source structure of claim 4 or 5, wherein the width of said gap is equal to or greater than 300 μm.

7. The high-power fast-response thermal emission infrared collimation light source structure of claim 2, wherein a wide-spectrum high-emissivity coating or a micro-nano photonics structural layer is arranged on the surface of the thermal emission array.

8. The high power fast response thermally emitting infrared collimated light source structure of claim 2, wherein the thermal response time of each thermal emitting unit in the thermal emitting array is less than 20ms, and the area of each thermal emitting unit in the thermal emitting array is less than 1mm²。

9. The high power fast response thermal emission infrared collimated light source structure of claim 2, wherein said infrared collimating array is a curved array.

10. The high power fast response thermal emission infrared collimated light source structure of claim 9, wherein the surface of the curved array is plated with an interference film.

Technical Field

The invention belongs to the technical field of infrared light sources, and particularly relates to a high-power fast-response thermal emission infrared collimation light source structure.

Background

Commonly used infrared light sources are heat emitting sources, infrared LEDs and infrared laser sources. The heat emission source adopts filament or thin film resistance wire to reach high temperature due to ohmic heating under the action of electric excitation so as to generate infrared heat radiation, and can obtain wide-spectrum infrared emission similar to blackbody radiation under the condition of containing a coating with high surface emissivity, and meanwhile, the heat emission source also has the wide-angle distribution characteristic of a Lambert emitter. The infrared LED is a solid semiconductor light emitting device, has high electro-optical efficiency, but has a large emission angle, and the emission spectrum is mainly concentrated in a limited band of the mid-infrared due to material limitations. An infrared laser source such as a quantum cascade laser is a high-power infrared source with narrow spectrum and good directivity, and is often applied to spectrum application occasions requiring high precision or low detection lower limit, but the infrared laser source has limited spectral line coverage and high price, and the application range of the infrared laser source is limited.

In the application occasions with low cost and low detection precision requirements, a large number of cheap heat emission sources are adopted as infrared light sources. Due to the limitation of heating temperature and blackbody radiation limit, the spectral emission power of the thermal emission infrared light source, particularly the long-wave infrared emission power, is not high, so that the thermal emission infrared light source is not suitable for long-optical-path high-precision infrared absorption measurement application. In order to obtain a lower detection limit, if a thermal emission infrared light source is used, it is necessary to use an emission source having a larger emission area in order to obtain higher power, but the larger emission area brings lower response speed, and there is a limit in applications where high response speed is required. In addition, long-range or long-range infrared absorption spectroscopy applications require high power from the light source, but also have a small divergence angle to concentrate the energy, which is beneficial for efficient transmission of infrared beams and miniaturization of the optical system volume. However, the existing thermal emission infrared light source cannot meet the requirements of high power, fast response and long optical path measurement.

Disclosure of Invention

In view of the above, the present invention provides a high power, fast response thermally emitting infrared collimated light source structure that overcomes, or at least partially solves, the above mentioned problems.

In order to solve the above technical problem, the present invention provides a high-power fast-response thermal emission infrared collimation light source structure, comprising:

a heat dissipation base for mounting a heat emitting chip;

the thermal emission chip is used for emitting infrared beams towards the infrared collimation module; the heat emission chip is arranged on the heat dissipation base;

the infrared collimation module is used for collimating the infrared beam emitted by the heat emission chip; the infrared collimation module is opposite to the heat emission chip;

the thermal emission chip is connected with the infrared collimation module through a spacing layer, or the heat dissipation base is connected with the infrared collimation module through a support frame.

Preferably, a thermal emission array is arranged on the thermal emission chip, an infrared collimation array is arranged on the infrared collimation module, and the thermal emission array and the infrared collimation array are arranged correspondingly.

Preferably, a cavity is disposed on the heat emitting chip corresponding to the heat emitting array.

Preferably, a void is formed between the thermal emission array and the infrared collimation array.

Preferably, the width of the voids is 100 μm or more.

Preferably, the width of the voids is 300 μm or more.

Preferably, the surface of the thermal emission array is provided with a wide-spectrum high-emissivity coating or a micro-nano photonic structure layer.

Preferably, the thermal response time of each thermal emission unit in the thermal emission array is less than 20ms, and the area of each thermal emission unit in the thermal emission array is less than 1mm²。

Preferably, the infrared collimation array is a curved array.

Preferably, the surface of the curved array is plated with an interference film.

One or more technical solutions in the embodiments of the present invention have at least the following technical effects or advantages: according to the high-power quick-response thermal emission infrared collimation light source structure, a plurality of small-area thermal emission units are adopted to form a thermal emission array, and corresponding collimation array combinations are applied to form an infrared light beam with high power and a small divergence angle, so that the high-power quick-response thermal emission infrared collimation light source structure is suitable for long-optical-path spectral measurement application; meanwhile, the small-area heat emission unit has a fast response characteristic, so that the array infrared light source formed by the small-area heat emission unit has a faster response speed than a single large-area heat infrared light source, and the array infrared light source is suitable for high-speed spectrum measurement occasions; in addition, compared with an infrared laser light source, the thermal emission infrared light source has much lower cost, and the emission wavelength of the thermal emission infrared light source can be randomly adjusted in a wide range from a near infrared band to a long-wave infrared band through surface structure design, so that the thermal emission infrared light source has stronger adaptability, flexibility and selectivity.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a first embodiment of a high-power fast-response thermal emission infrared collimated light source structure according to an embodiment of the present invention;

fig. 2 is a schematic structural diagram of a second embodiment of a high-power fast-response thermal emission infrared collimated light source structure according to an embodiment of the present invention.

Detailed Description

The present invention will be described in detail below with reference to specific embodiments and examples, and the advantages and various effects of the present invention will be more clearly apparent therefrom. It will be understood by those skilled in the art that these specific embodiments and examples are for the purpose of illustrating the invention and are not to be construed as limiting the invention.

Throughout the specification, unless otherwise specifically noted, terms used herein should be understood as having meanings as commonly used in the art. Accordingly, unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. If there is a conflict, the present specification will control.

Unless otherwise specifically stated, various raw materials, reagents, instruments, equipment and the like used in the present invention are commercially available or can be prepared by existing methods.

Referring to fig. 1-2, in the embodiment of the present application, the present invention provides a high-power fast-response thermal emission infrared collimated light source structure, including:

a heat-dissipating base 11 for mounting a heat-emitting chip 12;

a thermal emission chip 12 for emitting an infrared beam toward the infrared collimation module 14; the heat emitting chip 12 is disposed on the heat dissipation base 11;

an infrared collimation module 14, configured to collimate an infrared light beam emitted by the heat emission chip 12; the infrared collimation module 14 is opposite to the heat emission chip 12;

the thermal emission chip 12 is connected to the infrared collimation module 14 through a spacer layer 13, or the heat dissipation base 11 is connected to the infrared collimation module 14 through a support frame 20.

In the embodiment of the present application, the thermal emission chip 12 emits an infrared beam toward the infrared collimation module 14, the infrared collimation module 14 collimates the infrared beam emitted by the thermal emission chip 12 to obtain a collimated beam 19, and heat generated by the thermal emission chip 12 irradiating the infrared collimation module 14 can be rapidly conducted to the thermal emission chip 12 through the spacer layer 13, and then dissipated through the heat dissipation base 11; alternatively, the high heat generated by the infrared collimating module 14 under the irradiation of the heat emitting chip 12 can be directly conducted to the heat dissipating base 11 through the supporting frame 20 of metal with high thermal conductivity to be dissipated.

In the embodiment of the present application, the material used for the spacer layer 13 is a material with a high thermal conductivity coefficient, such as metal, monocrystalline silicon, thermal conductive silicone, boron nitride thermal conductive rubber, and the like.

As shown in fig. 1-2, in the embodiment of the present application, a thermal emission array 15 composed of a plurality of thermal emission units is disposed on the thermal emission chip 12, an infrared collimation array 17 is disposed on the infrared collimation module 14, and the thermal emission array 15 is disposed corresponding to the infrared collimation array 17.

In the embodiment of the present application, the thermal emission chip 12 includes a thermal emission array 15 composed of 3 × 3 units, the infrared collimation module 14 includes an infrared collimation array 17 corresponding to the number of units in the thermal emission array 15, and the thermal emission array 15 and the infrared collimation array 17 are connected by bonding a spacer layer 13 made of a high thermal conductivity material. Each emission unit in the thermal emission array 15 generates electrically modulated high-temperature thermal radiation in a pulse electrical heating mode, and the temperature range is 400-800 ℃.

In the embodiment of the present application, as shown in fig. 1-2, a cavity 16 is disposed on the heat emitting chip 12 corresponding to the heat emitting array 15.

In the embodiment of the present application, the heat-emitting chip 12 generates heat itself during operation, and the heat is conducted through the cavity 16 to the heat-dissipating base 11 and exhausted.

In the embodiment of the present application, as shown in fig. 1-2, a gap 18 is formed between the thermal emission array 15 and the infrared collimation array 17.

In the present embodiment, the spacer layer 13 also controls the spacing 18 between the surface of the heat emitting array 15 and the surface 17 of the infrared collimating array. Specifically, since the thermal emission array 15 is a blackbody-like radiation source and has a very wide emission spectrum (1-20 μm), it is difficult for the infrared collimation module 14 to ensure that there is no absorption of the thermal emission in this wide band, and it is inevitable that temperature rise occurs under irradiation of a high-temperature emission source, so that it is necessary to consider dissipation of heat of the infrared collimation module 14 and to conduct away heat of the infrared collimation module 14 in time, which is especially necessary when the infrared light source structure is hermetically or vacuum-packaged. And the voids 18 may reduce the heat transfer from the heat emitting array 15 to the infrared collimating module 14.

In the embodiment of the present application, the width of the gap 18 is equal to or greater than 100 μm. Further, the width of the void 18 is 300 μm or more.

In the embodiment of the application, a wide-spectrum high-emissivity coating or a micro-nano photonic structure layer is arranged on the surface of the thermal emission array 15. The wide-spectrum high-emissivity coating can be a black gold, black platinum, black silicon or amorphous carbon film layer with a porous structure, so that the thermal emission array 15 can obtain wide-spectrum high emissivity; the micro-nano photonic structure layer can generate high emission of certain wavelengths in a long-wave infrared band (7-12 mu m), inhibit the emission of certain sub-bands in a medium-wave infrared band (3-7 mu m), and enable the thermal emission array 15 to obtain narrow-spectrum emission of at least one band.

In the embodiment of the present application, the thermal response time of each thermal emission unit in the thermal emission array 15 is less than 20ms, and the area of each thermal emission unit in the thermal emission array 15 is less than 1mm²。

In the embodiment of the present application, the infrared collimation array 17 is a curved array. The curved surface array is an aspheric surface or a free-form surface.

In the embodiment of the application, the surface of the curved array is plated with an interference film. The interference film acts as a filter, allowing the desired narrow spectrum infrared light or light to pass through and reflecting infrared light of other wavelength bands.

In the embodiment of the present application, the substrate material of the infrared collimating module 14 is selected from infrared transparent materials, such as silicon, germanium, calcium fluoride, barium fluoride, zinc sulfide, and the like, and preferably a silicon single crystal material with good thermal conductivity is selected. The infrared collimating array 17 in the infrared collimating module 14 is a curved array that functions to collimate the diverging infrared beam from the heat emitting array 15. The surface type of the curved surface array can be an aspheric surface or a free-form surface. By optimizing the surface profile or optimizing both the front and back surfaces of the collimating module 14, the obtained surface topography of the infrared collimating module 14 can collimate the infrared beam to a divergence angle of less than 2 °, or even less than 1 °. The curved surface can also be coated with an interference filter film (not shown in the figure), which transmits the wave band required to be measured and reflects the wave band not required to be measured. The reflected infrared light can be absorbed and utilized again after reaching the emission unit, and the photoelectric conversion efficiency is improved.

According to the high-power quick-response thermal emission infrared collimation light source structure, a plurality of small-area thermal emission units are adopted to form an array form, and corresponding collimation array combinations are applied to form an infrared light beam with high power and a small divergence angle, so that the high-power quick-response thermal emission infrared collimation light source structure is suitable for long-optical-path spectral measurement application; meanwhile, the small-area heat emission unit has a fast response characteristic, so that the array infrared light source formed by the small-area heat emission unit has a faster response speed than a single large-area heat infrared light source, and the array infrared light source is suitable for high-speed spectrum measurement occasions; in addition, compared with an infrared laser light source, the thermal emission infrared light source has much lower cost, and the emission wavelength of the thermal emission infrared light source can be randomly adjusted in a wide range from a near infrared band to a long-wave infrared band through surface structure design, so that the thermal emission infrared light source has stronger adaptability, flexibility and selectivity.

It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element. The above description is merely exemplary of the present application and is presented to enable those skilled in the art to understand and practice the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

In short, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.