阅读说明：本技术 一种rgb-led芯片及其制造方法和应用 (RGB-LED chip and manufacturing method and application thereof ) 是由 刘舸 李元元 于 2020-12-25 设计创作，主要内容包括：本发明属于半导体发光件技术领域。一种RGB-LED芯片,包括R芯片、B芯片和G芯片；R芯片包括由上至下设置的第一绝缘层、第一电极、红光外延片、第二电极和衬底；B芯片包括由上至下设置的第二绝缘层、第二电极、蓝光外延片和第一电极；G芯片包括由上至下设置的第二绝缘层、第二电极、绿光外延片和第一电极；各芯片中的第一电极极性相同,第一电极与第二电极极性相反；第一绝缘层和第二绝缘层均图形化有电极窗口,第一绝缘层图形化有与B芯片、G芯片对应的焊接区域,B芯片和G芯片焊接于焊接区域,与R芯片形成共阳极结构或共阴极结构。本发明芯片中的RGB三色芯片垂直布局,降低了器件组装难度,适用于大规模化生产应用。(The invention belongs to the technical field of semiconductor light-emitting parts. An RGB-LED chip comprises an R chip, a B chip and a G chip; the R chip comprises a first insulating layer, a first electrode, a red light epitaxial wafer, a second electrode and a substrate which are arranged from top to bottom; the chip B comprises a second insulating layer, a second electrode, a blue light epitaxial wafer and a first electrode which are arranged from top to bottom; the G chip comprises a second insulating layer, a second electrode, a green light epitaxial wafer and a first electrode which are arranged from top to bottom; the first electrodes in the chips have the same polarity, and the polarities of the first electrodes are opposite to those of the second electrodes; the first insulating layer and the second insulating layer are patterned to form electrode windows, the first insulating layer is patterned to form welding areas corresponding to the chip B and the chip G, the chip B and the chip G are welded to the welding areas, and a common anode structure or a common cathode structure is formed by the chip B and the chip G and the chip R. The RGB three-color chip in the chip is vertically arranged, so that the device assembly difficulty is reduced, and the RGB three-color chip is suitable for large-scale production and application.)

1. An RGB-LED chip is characterized by comprising an R chip, a B chip and a G chip; the R chip comprises a first insulating layer, a first electrode, a red light epitaxial wafer, a second electrode and a substrate which are sequentially arranged from top to bottom; the chip B comprises a second insulating layer, a second electrode, a blue light epitaxial wafer and a first electrode which are sequentially arranged from top to bottom; the G chip comprises a second insulating layer, a second electrode, a green light epitaxial wafer and a first electrode which are sequentially arranged from top to bottom; the first electrodes in the chips have the same polarity, and the polarities of the first electrodes are opposite to those of the second electrodes; the first insulating layer and the second insulating layer are both patterned with electrode windows, and metal films are evaporated in the electrode windows; the first insulating layer is patterned with welding areas corresponding to the chip B and the chip G, the chip B and the chip G are welded in the welding areas, and a common anode structure or a common cathode structure is formed by the chip B and the chip G and the chip R.

2. The RGB-LED chip of claim 1, wherein the area ratio of the R chip, the B chip, and the G chip is 3-5:1: 1.

3. A method of manufacturing an RGB-LED chip according to claim 1 or 2, comprising the steps of:

s1, growing red, green and blue epitaxial wafers on a substrate material through MOCVD, wherein the substrate material of the red epitaxial wafer is a conductive substrate;

s2, evaporating anode materials on the surfaces of the green light epitaxial wafer and the blue light epitaxial wafer, and evaporating cathode materials on the other surfaces of the blue light epitaxial wafer and the green light epitaxial wafer after the substrate is stripped; evaporating a first insulating layer on the surface of the anode or the cathode, wherein the surface of the first insulating layer is patterned through a photoetching process to etch an electrode window, and the electrode window is evaporated with a first metal film; solder is arranged on the surface of the electrode which is not evaporated with the insulating layer and is used as a first welding area, and a chip G and a chip B are manufactured;

s3, evaporating a second electrode material on the surface of the red light epitaxial wafer, wherein the polarity of the second electrode is the same as that of the electrode provided with the first welding area on the surface; a first electrode material is evaporated between the conductive substrate and the red light epitaxial wafer, and the polarity of the first electrode is opposite to that of the second electrode; evaporating a second insulating layer on the surface of the second electrode; patterning the surface of the second insulating layer through a photoetching process to form a second welding area corresponding to the first welding area, and etching an electrode window; evaporating a second metal film in the welding area, and evaporating a first metal film in the pole window to obtain an R chip;

and S4, transferring the G chip and the B chip onto the R chip, and fixedly connecting the first welding area and the second welding area through a eutectic welding process to obtain the RGB-LED chip with a common anode or common cathode structure.

4. The method of manufacturing an RGB-LED chip according to claim 3, wherein the substrate material includes silicon or sapphire.

5. The method of claim 3, wherein in step S2, the anode material is ITO/Ag/Ti/Ni/Au thin film, and the cathode material is transparent electrode material.

6. The method of manufacturing an RGB-LED chip according to claim 3, wherein said first and second insulating layers are SiO₂And passivating the protective layer.

7. The method of manufacturing an RGB-LED chip as recited in claim 3, wherein the solder is AuSn solder.

8. The method of claim 3, wherein in step S3, the anode material is ITO conductive film.

9. The method of claim 3, wherein the first metal film is an Au film and the second metal film is a Ni/Au film.

10. A Micro LED device comprising a display substrate, and at least one RGB-LED chip of claim 1 or 2 bonded to the display substrate.

Technical Field

The invention belongs to the technical field of semiconductor light-emitting parts, and particularly relates to an RGB-LED chip and a manufacturing method and application thereof.

Background

Micro LEDs are an important direction for the development of current display technology, and one of the technologies for combining Micro LEDs is the difficulty and focus of research in this field. The current development is rapid in the field of quantum dot QLEDs, the application of Micro LEDs in the display field can be realized by using quantum dot materials as light conversion functional layers, but the method also faces the problems that the quantum dot materials are inherently unstable, have short service life, are difficult to shade, are greatly influenced by water and oxygen and the like, so that the applicant fully considers the brightness difference of LEDs with different colors and the spatial position characteristic in combined packaging, and designs a novel inorganic Micro LED device unit by optimizing the device structure.

Disclosure of Invention

The technical problem to be solved by the invention is to provide an RGB-LED chip, wherein RGB three-color chips in the RGB-LED chip are vertically arranged and have a common anode or common cathode laminated structure, so that the assembly difficulty of devices is reduced, and the RGB-LED chip is suitable for large-scale production and application.

The technical scheme of the invention is as follows:

an RGB-LED chip comprises an R chip, a B chip and a G chip; the R chip comprises a first insulating layer, a first electrode, a red light epitaxial wafer, a second electrode and a substrate which are sequentially arranged from top to bottom; the chip B comprises a second insulating layer, a second electrode, a blue light epitaxial wafer and a first electrode which are sequentially arranged from top to bottom; the G chip comprises a second insulating layer, a second electrode, a green light epitaxial wafer and a first electrode which are sequentially arranged from top to bottom; the first electrodes in the chips have the same polarity, and the polarities of the first electrodes are opposite to those of the second electrodes; the first insulating layer and the second insulating layer are both patterned with electrode windows, and metal films are evaporated in the electrode windows; the first insulating layer is patterned with welding areas corresponding to the chip B and the chip G, the chip B and the chip G are welded in the welding areas, and a common anode structure or a common cathode structure is formed by the chip B and the chip G and the chip R.

Furthermore, the area ratio of the R chip, the B chip and the G chip is 3-5:1: 1. The area size and the pattern shape of the B chip and the G chip can be correspondingly adjusted according to different brightness requirements and cost factors, so that the brightness consistency of the RGB-LED chips is realized.

A manufacturing method of the RGB-LED chip comprises the following steps:

s1, growing red, green and blue epitaxial wafers on a substrate material through MOCVD, wherein the substrate material of the red epitaxial wafer is a conductive substrate;

s2, evaporating anode materials on the surfaces of the green light epitaxial wafer and the blue light epitaxial wafer, and evaporating cathode materials on the other surfaces of the blue light epitaxial wafer and the green light epitaxial wafer after the substrate is stripped; evaporating a first insulating layer on the surface of the anode or the cathode, wherein the surface of the first insulating layer is patterned through a photoetching process to etch an electrode window, and the electrode window is evaporated with a first metal film; solder is arranged on the surface of the electrode which is not evaporated with the insulating layer and is used as a first welding area, and a chip G and a chip B are manufactured;

s3, evaporating a second electrode material on the surface of the red light epitaxial wafer, wherein the polarity of the second electrode is the same as that of the electrode provided with the first welding area on the surface; a first electrode material is evaporated between the conductive substrate and the red light epitaxial wafer, and the polarity of the first electrode is opposite to that of the second electrode; evaporating a second insulating layer on the surface of the second electrode; patterning the surface of the second insulating layer through a photoetching process to form a second welding area corresponding to the first welding area, and etching an electrode window; evaporating a second metal film in the welding area, and evaporating a first metal film in the pole window to obtain an R chip;

and S4, transferring the G chip and the B chip onto the R chip, and fixedly connecting the first welding area and the second welding area through a eutectic welding process to obtain the RGB-LED chip with a common anode or common cathode structure.

Further, the substrate material comprises silicon or sapphire.

Further, in step S2, the anode material is an ITO/Ag/Ti/Ni/Au thin film, and the cathode material is a transparent electrode material.

Further, the first insulating layer and the second insulating layer are SiO₂And passivating the protective layer.

Further, the solder is AuSn solder. The AuSn welding flux can be uniformly coated on the welding area, and the brightness consistency of the RGB-LED chip is not influenced.

Further, in step S3, the anode material is an ITO conductive film.

Further, the first metal film is an Au film, and the second metal film is a Ni/Au film.

A Micro LED device comprising a display substrate, and at least one RGB-LED chip of claim 1 or 2 bonded to the display substrate.

The invention has the following beneficial effects:

the RGB three-color chips in the RGB-LED chip are vertically arranged and have a common cathode or common anode laminated structure, so that the plane layout of the traditional RGB-LED chip is changed. The application mode of the RGB-LED chip on the Micro LED is also simplified from the assembly of three RGB chips into the assembly of one chip, so that the huge transfer of the Micro LED is simplified into single-chip transfer, and the technical difficulty and the cost risk of the huge transfer are obviously reduced. The RGB-LED chip can design different chip areas according to the efficiency of chips with different colors, thereby ensuring the brightness consistency of light chips with different colors and ensuring the overall performance by adopting the inorganic LED chip.

Drawings

FIG. 1 is a schematic cross-sectional structure of an RGB-LED chip according to the present invention;

FIG. 2 is a top view of the structure of the RGB-LED chip of the present invention;

the chip comprises an R chip 1, an R chip 11, a substrate 12, a red light epitaxial wafer 2, a B chip 21, a blue light epitaxial wafer 3, a G chip 31, a green light epitaxial wafer 4, a first insulating layer 5, a second insulating layer 6, a first electrode 7, a second electrode 8, an electrode window 9 and a metal film.

Detailed Description

The present invention will be described in detail with reference to examples, which are only preferred embodiments of the present invention and are not intended to limit the present invention.

Example 1

An RGB-LED chip, as shown in figure 1-2, comprises an R chip 1, a B chip 2 and a G chip 3, wherein the area ratio of the R chip 1 to the B chip 2 to the G chip 3 is 3:1: 1; the R chip 1 comprises a first insulating layer 4, a first electrode 6, a red light epitaxial wafer 12, a second electrode 7 and a substrate 11 which are sequentially arranged from top to bottom; the chip B comprises a second insulating layer 5, a second electrode 7, a blue light epitaxial wafer 21 and an electrode window 6 which are sequentially arranged from top to bottom; the G chip 3 comprises a second insulating layer 5, a second electrode 7, a green light epitaxial wafer 31 and a first electrode 6 which are sequentially arranged from top to bottom; the first electrode 6 in each chip is an anode electrode, and the second electrode 7 is a cathode electrode; the first insulating layer 4 and the second insulating layer 5 are both patterned with electrode windows 8, and metal films 9 are evaporated in the electrode windows 8; the first insulating layer 4 is patterned with a bonding region corresponding to the B chip 2 and the G chip 3, and the B chip 2 and the G chip 3 are bonded to the bonding region to form a common anode structure with the R chip 1.

Wherein the area ratio of the R chip 1, the B chip 2 and the G chip 3 is 3:1: 1.

Example 2

An RGB-LED chip, as shown in fig. 1-2, includes an R chip 1, a B chip 2, and a G chip 3; the area ratio of the R chip 1 to the B chip 2 to the G chip 3 is 3:1: 1; the R chip 1 comprises a first insulating layer 4, a first electrode 6, a red light epitaxial wafer 12, a second electrode 7 and a substrate 11 which are sequentially arranged from top to bottom; the chip B comprises a second insulating layer 5, a second electrode 7, a blue light epitaxial wafer 21 and an electrode window 6 which are sequentially arranged from top to bottom; the G chip 3 comprises a second insulating layer 5, a second electrode 7, a green light epitaxial wafer 31 and a first electrode 6 which are sequentially arranged from top to bottom; the first electrode 6 in each chip is a cathode electrode, and the second electrode 7 is an anode electrode; the first insulating layer 4 and the second insulating layer 5 are both patterned with electrode windows 8, and metal films 9 are evaporated in the electrode windows 8; the first insulating layer 4 is patterned with bonding regions corresponding to the B chip 2 and the G chip 3, and the B chip 2 and the G chip 3 are bonded to the bonding regions to form a common cathode structure with the R chip 1.

A manufacturing method of the RGB-LED chip comprises the following steps:

s1, growing a red, green and blue epitaxial wafer on a substrate material through MOCVD (metal organic chemical vapor deposition), wherein the substrate material comprises silicon or sapphire, and the substrate material of the red epitaxial wafer 12 is a conductive substrate 11 Si;

s2, evaporating ITO/Ag/Ti/Ni/Au films on the surfaces of the green light epitaxial wafer 31 and the blue light epitaxial wafer 21 to serve as anode materials, wherein the thickness of each layer is 30nm/30nm/10nm/10nm/30 nm; stripping machineEvaporating a transparent electrode material on the other surface of the blue or green light epitaxial wafer after leaving the substrate 11 as a cathode; depositing SiO with the thickness of 30nm on the surface of an anode or a cathode by evaporation₂Passivation protective layer of said SiO₂Patterning the surface of the passivation protective layer through a photoetching process, etching an electrode window 8, and evaporating an Au thin film with the thickness of 30nm on the electrode window 8; AuSn welding flux is arranged on the surface of the electrode which is not evaporated with the insulating layer and is used as a first welding area, and a G chip 3 and a B chip 2 are manufactured, wherein the sizes of the G chip 3 and the B chip 2 are both 30 micrometers multiplied by 50 micrometers;

s3, evaporating a second electrode 7 material on the surface of the red light epitaxial wafer 12, wherein the second electrode 7 has the same polarity as the electrode of which the surface is provided with the first welding area; an electrode window 6 material is evaporated between the conductive substrate 11 and the red light epitaxial wafer 12, the polarity of the electrode window 6 is opposite to that of the second electrode 7, and the anode is an ITO conductive thin film with the thickness of 50 nm; SiO with a thickness of 30nm is deposited on the surface of the second electrode 7 by evaporation₂Passivating the protective layer; the SiO₂Patterning the surface of the passivation protective layer through a photoetching process to form a second welding area corresponding to the first welding area, and etching an electrode window 8; the welding area is evaporated with a Ni/Au film, and the thickness of each layer is 10nm/20 nm; the electrode window is evaporated with an Au thin film with the thickness of 30nm, and the size of the Au thin film is 10 micrometers multiplied by 10 micrometers; preparing an R chip 1 with the size of 80 Mum multiplied by 80 Mum;

and S4, transferring the G chip 3 and the B chip 2 to the R chip 1, and fixedly connecting the first welding area and the second welding area through a eutectic welding process to obtain the RGB-LED chip with a common anode or common cathode structure.

The performance of the RGB-LED chip embodiment 1-2 of the invention is detected, and the detection result is as follows: the RGB-LED chips with two structures have brightness higher than 20000cd/m under the condition of 20mA current²The light-emitting angle is larger than 150 degrees, and the RGB starting voltages are distributed by taking 2.2v, 3.0v and 3.3v as centers in sequence.

A Micro LED device comprises a display substrate and at least one RGB-LED chip bonded on the display substrate. The RGB-LED chip with the laminated structure is applied to the Micro LED device, so that the technical difficulty of mass transfer of the Micro LED device is reduced, the production efficiency is improved, and the production cost is reduced.

The RGB three-color chips in the RGB-LED chip are vertically arranged and have a common anode or common cathode laminated structure, so that the mechanical strength and the shock resistance of a device can be improved, the processing steps of subsequent processing can be simplified, the production efficiency of subsequent production is improved, and the production cost is reduced.