阅读说明：本技术 一种采用新原料生长碲化铜的方法、碲化铜及应用 (Method for growing copper telluride by adopting new raw material, copper telluride and application ) 是由 陈莹 于 2020-08-12 设计创作，主要内容包括：本发明属于半导体材料制备技术领域,公开了一种采用新原料生长碲化铜的方法、碲化铜及应用,将衬底,碘化亚铜和碲粉,依次放置后,利用化学气相沉积法生长少层碲化铜二维材料,生长时间30min-1h,生长温度500℃-800℃。本发明提供了一种采用新原料生长碲化铜的制备方法,原料碲化铜价格低廉,生长过程简单,可重复性高,安全环保,有效克服了现有技术中制备方法能耗高,时间长的缺点,且本发明的制备方法中所需设备简单,在实验室研究和工业应用方面都具有较高的推广价值。本发明所提供的制备方法得到的碲化铜结晶性好,产量大,容易转移,为大批量生产碲化铜提供理论参考。(The invention belongs to the technical field of semiconductor material preparation, and discloses a method for growing copper telluride by using a new raw material, copper telluride and application thereof, wherein a substrate, cuprous iodide and tellurium powder are sequentially placed, and then a few-layer copper telluride two-dimensional material is grown by using a chemical vapor deposition method for 30min-1h at the growth temperature of 500-800 ℃. The invention provides a preparation method for growing copper telluride by adopting a new raw material, the raw material copper telluride is low in price, simple in growth process, high in repeatability, safe and environment-friendly, and effectively overcomes the defects of high energy consumption and long time of the preparation method in the prior art. The copper telluride prepared by the preparation method provided by the invention has good crystallinity, large yield and easy transfer, and provides theoretical reference for mass production of copper telluride.)

1. A method for growing copper telluride by using new raw materials is characterized by comprising the following steps:

sequentially placing a substrate, cuprous iodide and tellurium powder, and growing a few-layer copper telluride two-dimensional material by using a chemical vapor deposition method for 30min-1h at the growth temperature of 500-800 ℃.

2. The method for growing copper telluride using new raw materials as set forth in claim 1 wherein 3 to 5 pieces of 1cm x 1cm substrate, 0.1 to 0.5g of cuprous iodide and 0.1 to 0.5g of tellurium powder are mixed in a mass ratio of 1: 1, placed in a 1 inch CVD tube in sequence.

3. The method of growing copper telluride using new growth materials as set forth in claim 1 wherein said substrate is a silicon or mica sheet.

4. The method of growing copper telluride using new materials as set forth in claim 1 wherein the atmosphere in the environment for growing the two-dimensional copper telluride material by chemical vapor deposition is an inert gas including high purity nitrogen or argon.

5. The copper telluride prepared by the method for growing the copper telluride by using the new raw materials as claimed in claims 1-4.

6. A solar cell, superconducting, optical detection, hydrothermal conversion, microwave shielding semiconductor component fabricated using the copper telluride as set forth in claim 5.

Technical Field

The invention belongs to the technical field of semiconductor material preparation, and particularly relates to a method for growing copper telluride by using a new raw material, copper telluride and application.

Background

Currently, copper chalcogenides are widely used in various fields such as solar cells, superconductivity, optical detection, hydrothermal conversion, microwave shielding, and the like, because of their excellent semiconductor properties.

The methods for preparing copper telluride with different morphologies are reported to be mainly as follows:

the mechanical stripping method is the most basic method for obtaining a few-layer copper telluride, but it is difficult to obtain a large-area copper telluride by this method. Hydrothermal methods, which are time consuming, generally require templates.

Chemical deposition method, electrodeposition method, can prepare copper telluride quantum dot and film, but difficult to get compact few layers of copper telluride; the ion exchange method needs a template, the shape is limited by the template, and a few layers of thin films are difficult to obtain; the magnetron sputtering method is a polycrystalline film and has high cost.

Through the above analysis, the problems and defects of the prior art are as follows: (1) the prior art is difficult to obtain large-area copper telluride. And the preparation method requires a template, which is time-consuming.

The difficulty in solving the above problems and defects is: copper telluride is unstable and it is difficult to obtain a large-area thin film.

The significance of solving the problems and the defects is as follows: in practice and industrialization, a large-area copper telluride thin film material is needed, but the application of copper telluride is severely restricted by the existing production method, and the technology can realize the preparation of the large-area copper telluride and lay a foundation for the application of the large-area copper telluride.

Disclosure of Invention

Aiming at the problems in the prior art, the invention provides a method for growing copper telluride by adopting a new raw material, the copper telluride and application.

The invention is realized in such a way that a method for growing copper telluride by adopting a new raw material comprises the following steps:

3-5 pieces of 1cm by 1cm substrates, 0.1-0.5g of cuprous iodide and 0.1-0.5g of tellurium powder (the mass ratio of the cuprous iodide to the tellurium powder is 1: 1) are sequentially placed, and then a chemical vapor deposition method is used for growing a few-layer copper telluride two-dimensional material for 30min-1h at the growth temperature of 500-800 ℃.

Further, the substrate, cuprous iodide, and tellurium powder were placed in this order in a 1-inch CVD tube.

The substrate is a silicon-oxygen sheet or a mica sheet.

In the growing environment of the few-layer copper telluride two-dimensional material grown by the chemical vapor deposition method, the atmosphere is inert gas, and the inert gas comprises high-purity nitrogen or argon.

The invention also aims to provide copper telluride prepared by the method for growing the copper telluride by using the new raw material.

Another object of the present invention is to provide a solar cell, superconducting, photodetection, hydrothermal conversion, microwave shielding semiconductor component, made using the copper telluride.

By combining all the technical schemes, the invention has the advantages and positive effects that: the invention provides a preparation method for growing copper telluride by adopting a new raw material, the raw material copper telluride is low in price, simple in growth process, high in repeatability, safe and environment-friendly, and effectively overcomes the defects of high energy consumption and long time of the preparation method in the prior art.

As can be seen from the optical micrograph of fig. 3, a large-area tungsten ditelluride film was obtained.

As can be seen from the SEM spectrum data chart of fig. 4, the ratio of copper to tellurium elements in the obtained large-area tungsten ditelluride thin film is close to 2: 1.

the copper telluride prepared by the preparation method provided by the invention has good crystallinity, large yield and easy transfer, and provides theoretical reference for mass production of copper telluride.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments of the present application will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present application, and it is obvious for those skilled in the art that other drawings can be obtained from the drawings without creative efforts.

FIG. 1 is a flow chart of a method for growing copper telluride using new raw materials according to an embodiment of the present invention.

Fig. 2 is a diagram of a substrate, cuprous iodide and tellurium powder provided by the embodiment of the present invention.

Fig. 3 is a photograph of an optical microscope of copper telluride provided by an embodiment of the present invention.

Fig. 4 is an SEM photograph and a spectrum data chart of copper telluride provided by the embodiment of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

Aiming at the problems in the prior art, the invention provides a method for growing copper telluride by using a new raw material, copper telluride and application thereof, and the invention is described in detail by combining the attached drawings.

As shown in fig. 1, the method for growing copper telluride by using a new raw material provided by the embodiment of the invention comprises the following steps:

s101, placing a substrate (a silicon-oxygen sheet or a mica sheet), cuprous iodide and tellurium powder in a 1-inch CVD tube in sequence.

S102, growing few-layer copper telluride (Cu) by chemical vapor deposition₂Te) two-dimensional material, the growth time is 30min, the growth temperature is 600 ℃, and the atmosphere is inert gas (high-purity nitrogen or argon).

Those of ordinary skill in the art to which the invention pertains may implement additional steps, and the invention of fig. 1 is provided as a specific example only.

As shown in fig. 2, the tungsten source: cuprous iodide; tellurium source: tellurium powder; substrate: silicone sheets or mica sheets. In FIG. 2, a substrate (silicon-oxygen wafer or mica wafer), cuprous iodide and tellurium powder were sequentially placed in a 1-inch CVD tube, and a chemical vapor deposition method was used to grow a few layers of copper telluride (Cu)₂Te) two-dimensional material, the growth time is 30min, the growth temperature is 600 ℃, and the atmosphere is inert gas (high-purity nitrogen or argon).

As can be seen from the optical micrograph of fig. 3, a large-area tungsten ditelluride film was obtained.

As can be seen from the SEM data chart of fig. 4, the ratio of copper to tellurium elements in the obtained large-area tungsten ditelluride thin film is close to 2: 1.

the fund project of the invention: 2017 national science foundation committee' large-area high-quality WS₂Controllable growth of the film and the study of the photoelectric properties (No.: 21701041).

In the description of the present invention, "a plurality" means two or more unless otherwise specified; the terms "upper", "lower", "left", "right", "inner", "outer", "front", "rear", "head", "tail", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the invention. Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

The above description is only for the purpose of illustrating the present invention and the appended claims are not to be construed as limiting the scope of the invention, which is intended to cover all modifications, equivalents and improvements that are within the spirit and scope of the invention as defined by the appended claims.